REVIEW ARTICLE ON PROPERTIES, GROWTH & APPLICATIONS OF SILICON SEMICONDUCTOR Aditya.U.Chincholea, Jayant.R.Ghulghuleb a3rd year, Bachelor of Engineering,Electronics and Telecommunication Department, Yeshwantrao Chavan College of Engineering,Nagpur 441110,India bH.O.D, Department of Physics,Yeshwantrao Chavan College of Engineering, Nagpur 441110,India A B S T R A C T named the new element Silicium. “Silicon” got This paper presents the review of its name by Scottish Chemist Thomas Thomson development of silicon as a semiconductor (Thomson, 1817) [2]. He, kept the name device, its properties, growth techniques used ‘silicis’. Silicon is the fourteenth element of the for silicon crystal, applications and latest periodic table and comes in Group IVA research done till date. A broad comparison element. Pure silicon is a dark gray solid with of Czochralski growth method and Floating the same crystalline structure as diamond. It has zone method is presented. Floating Zone a melting point of 14100 C (25700 F), a boiling method results had a mechanically weaker point of 42710C (23550 F), and a density of silicon than that of the Czochralski silicon. 2.33 g/cm3. Naturally, silicon is found linked Other methods like Czochralski single- up with a pair of oxygen molecules as silicon crystal growth with applied magnetic field dioxide ‘silica’. Silicon is the seventh-most and neckingless growth method are also abundant element in the universe and the presented. Various information regarding second-most abundant element on the planet, the work on Silicon semiconductor by after oxygen, according to the Royal Society of prominent scientist iscollected. Si possesses a Chemistry and covers 25 percent of earth’s moderate energy band gap of 1.12eV, which crust. It does not appear as a free element in makes it a stable substance. It is used in nature as its chemical affinity is high, so it is electronic devices as it can operate in wide produced by chemical reduction process only. high temperature range up to 2000C. Silicon First Semiconductor Effect was recorded by plays a crucial part in information and Michael Faraday (Faraday, 1839) [3]. He communication technology, as it is used in described the “extraordinary case” of his manufacturing of components like discovery of electrical conduction increasing transistors, diodes, integrated circuits (ICs), with temperature in silver sulphide crystals. microchips, photonics so on. Silicon has Which was opposite to that observed in copper carried us into the ultra-large scale and other metals. Faraday’s experimental work integration (ULSI) era and system-on-a-chip in chemistry, also led him to first documented (SOC). Paper provides all necessary facts observation of semiconductor. While and growing research on the use of Silicon as investigating the effect of temperature on a semiconductor in rising communication semiconductor on “sulphurette of silver” (silver technology sulphide) in 1833 he found that electrical Keywords: Semiconductor; silicon; single- conductivity increased with increasing crystal growth; Czochralski method; temperature which was opposite of the metals Floating zone method; Neckingless growth like copper. Semiconductor point contact method rectifier was discovered by Ferdinand Braun (Braun, 1874) [4]. When he probed a galena 1. Introduction crystal with thin metal wire point, he noted that Silicon was first isolated in 1824 by Swedish current flowed freely in one direction only. chemist Berzelius (Berzelius, 1825) [1]. He Thus he discovered the rectification effect. In ISSN (PRINT): 2393-8374, (ONLINE): 2394-0697, VOLUME-6, ISSUE-1, 2019 255 INTERNATIONAL JOURNAL OF CURRENT ENGINEERING AND SCIENTIFIC RESEARCH (IJCESR) 1901 semiconductor rectifiers patented as “cat Valley. In 1958, Fairchild Semiconductor whisker” detectors by Jagdish Chandra Bose produced double-diffused silicon mesa (Bose, 1904) [5]. He patented the use of a transistors to meet demanding aerospace semiconductor crystal rectifier for detecting applications (Moore, 1998) [20]. In the year radio waves. Field effect semiconductor device 1959 Jean Hoerni (Hoerni, 1962) [21] develops concept was patented in 1926 by Julius the planar process to solve reliability problems Lilienfeld (Lilienfeld, 1930) [6].In 1931 “The of mesa transistor, thereby revolutionizing Theory of Electronic Semi-conductor” (Wilson, semiconductor manufacturing. In the same 1931)[7] gets published. Alan Wilson (Wilson, yearRobert Noyce (Noyce, 1961) [22] builds on 1931) [7] (Wilson, 1932) [8] uses quantum Jean Hoerni's planar process (Hoerni, 1962) mechanics to explain basic semiconductor [21] to patent a monolithic integrated circuit properties. After 7 years the three scientist structure that can be manufactured in high named, Boris Davydov (Davydov, 1938) [9], volume. Then Dawon Kahng fabricate working Nevill Mott (Mott, 1938) [10] and Walter transistors and demonstrate the first successful Schottky (Schottky, 1938) [11] independently MOS field-effect amplifier (Kahng, 1963) [23]. explains rectification. In 1940 Russell Ohls Jay Last (Norman, Last & Haas, 1960) [24] discovers the p-n junction and photovoltaic leads development of first commercial IC based effect in silicon that lead to the development of on Hoerni’s planar process (Hoerni, 1962) [21] junction transistor and solar cells (Ohl, 1946) and Noyce’s monolithic approach (Noyce, [12]. In the year 1941 semiconductor diodes 1961) [22]. In 1961 computer architect were served in WWII. The techniques for Seymour Cray funds development of first producing high purity germanium and silicon silicon device to meet the performance demands crystals were developed for wartime radar of world’s fastest machine. The 2N709 (FT- microwave detectors (Scaff & Ohl, 1947) [13]. 1310) n-p-n device was introduced in July 1961 William Shockley conceived an improved as first silicon transistor to exceed germanium transistor structure based on a theoretical speed [25]. The size, weight, and reduced power understanding of p-n junction effect (Shockley, consumption of integrated circuits compared to 1949) [14]. In 1951 William Pfann and Henry discrete transistor designs justify their high cost Theurer (Theurer, 1962) [15] developed a zone in military and aerospace systems. Diode refining technique for production of ultra-pure Transistor Logic (DTL) families create high- semiconductor materials. volume market for digital ICs but speed, cost, A transistorized computer prototype and density advantages establish Transistor demonstrates the small size and low-power Transistor logic (TTL) as the most popular advantages of semiconductors. James R. Harris standard logic configuration by the late 1960’s (Harris, 1958) [16] designed and built a (Ruegg & Beeson, 1961) [26]. General transistorized computer dubbed Transistor Microelectronics introduces first commercial Digital Computer (TRADIC) for the U.S. Air Metal-Oxide-Semiconductor (MOS) integrated Force in 1954.Silicon devices that function circuit when a 2-phase cock scheme (Norman & from -55 to 125oC became possible after the Stephenson, 1969) was used to to design a 20- supply of high-purity semiconductor-grade bit shift register using 120 p-channel transistor. material. In 1954 Morris Tanenbaum Gordon Moore, Fairchild Semiconductor’s (Tanenbaum, 1954) [17] fabricates the first Si Director of R&D, prediction of the rate of transistor at Bell Labs but Texas Instrument’s increase of transistor density on an integrated engineers build and market the first commercial circuit and establishment of a yardstick for device. In 1955 Jules Andrus and Walter Bond technology progress (Moore, 1964) [28]. (Andrus & Bond, 1958) [18], adapted Improvement on the reliability, packing density, photoengraving techniques from printing and speed of MOS ICs with a silicon-gate technology to enable precise etching of structure and designof the first commercial diffusion windows in Si wafers. In September silicon-gate IC, the Fairchild 3708 (Faggin & 1955 William Shockley (Shockley, 1955) [19] Klein, 1970) [29]. The Microma liquid crystal founded Shockley Semiconductor Laboratory display (LCD) digital watch (Forrer, 1972) [30] and develops Northern California’s First is the first product to integrate a complete prototype silicon devices while training young electronic system onto a single silicon chip, engineers and scientists for the future Silicon called as System-On-Chip or SOC. ISSN (PRINT): 2393-8374, (ONLINE): 2394-0697, VOLUME-6, ISSUE-1, 2019 256 INTERNATIONAL JOURNAL OF CURRENT ENGINEERING AND SCIENTIFIC RESEARCH (IJCESR) This review is done to provide the importance 1016atoms/cm3oxygen impurities. of silicon as a semiconductor, which has a wide • F-Z silicon has resistivity of between 10- use in electronics, Telecommunication, and in 200 Ωcm. other fields. This paper includes the work done • F-Z silicon is used to fabricate on silicon by prominent scientist and a broad semiconductor power devices for relative review of properties, growth techniques for voltage range of 750-1000V. silicon crystal , applications and latest research • F-Z Si is mechanically weaker and done till date. Comparison of Czochralski vulnerable to thermal stress, to overcome growth method and Floating-zone method is this F-Z Si crystal was grown with doping also presented. impurities like O2 and N. 2. Preparation • When doped with Nitrogen and Oxygen at 2.1. Preparation process of Si for devices concentration of 1.5×1015 atoms/cm3 or 1- Semiconductor devices and circuits are 1.5×1017 atoms/cm3 respectively