EE298‐5 PHOTONICS AND PLASMONICS SEMINAR – SPRING 2011 unit value: 1 instructor: Prof. Ivan Kaminow, [email protected] coordinator: Lea Barker, [email protected] class time: FRIDAYS, 11:00AM ‐ 12:30, 521 CORY HALL pre‐requisite: An interest in Photonics and/or Plasmonics. May be taken for credit and/or fun. website: http://inst.eecs.berkeley.edu/~ee298‐5/sp11/ plasmonics list: [email protected] This course is intended to give students at the advanced undergraduate or graduate level, and researchers, insight into current research based on a series of invited talks. SCHEDULE: 1/21 ‐ Prof. REUVEN GORDON, U. Victoria, Canada, “Challenging the Limits of Diffraction” Abstract: This talk will show ways of challenging three limits of optical diffraction. First, it will be shown how to focus light below the Abbe diffraction limit [1]. Next it will be shown how to squeeze light through small holes in a metal screen, allowing for 100% transmission in some cases, in contrast to Betheʹs aperture theory as found in textbooks [2,3]. This has interesting applications for biosensors. Finally, it will be shown how to optically trap nanoparticles with powers orders of magnitude smaller than required by conventional by Rayleigh scattering formulations [4], which has interesting applications for manipulating viruses and quantum dots. Theoretical and experimental results will be presented. (1) R. Gordon, ʺProposal for superfocusing at visible wavelengths using radiationless interference of a plasmonic array,ʺ Physical Review Letters, 102, 207402 (2009). (2) R. Gordon, A. G. Brolo, A. McKinnon, A. Rajora, B. Leathem, and K. L. Kavanagh, ʺStrong polarization in the optical transmission through elliptical nanohole arraysʺ Physical Review Letters, 92, 037401, (2004). (3) R. Gordon, ʺBetheʹs theory for aperture arrays,ʺ Physical Review A, 76, 053806, (2007). (4) M. L. Juan, R. Gordon, Y. Pang, F. Eftekhari, R. Quidant, ʺSelf‐induced back‐action optical trapping of dielectric nanoparticles,ʺ Nature Physics, advanced publication online 11 Oct. (2009). Bio: Reuven Gordon received his B.A.Sc. in Engineering Science (1997) and his M.A.Sc. in 1 Electrical Engineering (1999) from the University of Toronto. He received a Ph.D. in Physics (2002) from the University of Cambridge. In 2002, he joined the University of Victoria, where he currently holds a Canada Research Chair in Nanoplasmonics and an Associate Professor position in the Department of Electrical and Computer Engineering. In 2009, Dr. Gordon was a visiting Professor at the Institute for Photonic Sciences (ICFO ‐‐ Barcelona, Spain). He has received a Canadian Advanced Technology Alliance Award, an Accelerate BC Industry Impact Award and he was co‐inventor of the mode‐locked VCSEL (patents held by Hitachi). Dr. Gordonʹs recent works on nanoplasmonics, biosensors and optical trapping have been featured in the news sections of Nature, Nature Nanotechnology and IEEE Spectrum. Dr. Gordon has authored and co‐authored over 60 journal papers (including 5 invited contributions) with 1250 indexed journal citations and he has co‐authored two book chapters. Dr. Gordon is a Senior Member of the IEEE and a Professional Engineer of BC. 1/28 – Prof. J‐P. REITHMAIER, Institute of Nanostructure Technologies, U. Kassel, Germany, “Nanostructured Semiconductors for Optoelectronic Applications: From Single Photon Emission to High Power Quantum Dot Lasers” Abstract: An overview will be given on a part of our research of the last few years on nanostructured semiconductors with the focus on III‐V materials. The strength of nanostructure technologies is the control of material and device properties by the geometry and the arrangement of nano objects. Additional degrees of freedom allow tailoring of material and device properties not possible with conventional technologies. Major technologies involved are self‐organized growth techniques of III‐V quantum dots including also position‐controlled QDs and high resolution electron beam lithography with high aspect ratio etching techniques. Examples will be given, which are covering a wide span of application areas from single photon emitters for quantum information processing, high speed lasers and amplifiers for optical data‐ and telecom and high‐power quantum dot lasers for coolerless optical pump modules. Biography: Johann Peter Reithmaier studied Physics at TU Munich and made his PhD at Siemens and Walter‐Schottky‐Institute in 1990. Until 1992, he worked as Postdoc at IBM in Rüschlikon, Switzerland on III/V epitaxy. In 1992, he joined University of Würzburg where he built up a research group working on nanostructured semiconductors and their applications in optoelectronic devices. In 2005 he became a full professor of physics and director of the Institute of Nanostructure Technologies and Analytics at the University of Kassel. He is author or co‐author of more than 480 journal and conference papers (240 in refereed journals, 2 books, 3 book articles and 75 invited talks). He is a member of the Deutsche Physikalische Gesellschaft (DPG) and of IEEE Photonics Society (Fellow of IEEE since 2011). 2 1/28 EXTRA SEMINAR: 3‐4pm in 521 Cory Hall Prof. WOLFGANG STOLZ, Material Sciences Center and Faculty of Physics, Philipps‐ University, Marburg, Germany & CTO NAsP III/V GmbH Marburg, “Novel dilute nitride III/V‐semiconductor laser system for the monolithic integration to Si‐ microelectronics” Abstract: In recent years the class of dilute nitride III/V‐semiconductors and corresponding heterostructures are gaining increasing interest both from fundamental as well as applied point of view. This is caused by their unique optoelectronic properties and in particular by the novel conduction band formation process leading to an extreme band gap bowing with increasing N‐content in the crystal. The novel material system Ga(NAsP) can be grown lattice‐matched to (001) Si‐substrate. The incorporation of N in the Ga(NAsP)‐material allows for a significant reduction in the lattice constant, which leads on one side to a dislocation free deposition. On the other side the specific conduction band formation process in these materials is used to realize a direct band gap semiconductor. By applying a variety of physical investigation techniques the high crystalline quality as well as the direct band gap character of the novel Ga(NAsP)‐material system have been verified. Ga(NAsP)/(BGa)(AsP)‐MQWH were grown on exact oriented (001) Si substrates embedded in thick (BGa)P separate confinement hetero‐layers by metalorganic vapour phase epitaxy (MOVPE). The incorporation of B into GaP and Ga(AsP) allows for a precise strain management of the whole III/V laser stack towards the lattice constant of Si. The optoelectronic properties and first lasing characteristics of Ga(NAsP)‐ MQWH on (001) Si‐substrate will be presented and discussed. These results form the basis for a unique realization of monolithic integration of III/V‐based optoelectronic and Si‐microelectronic functionalities in the near future. The challenges of this integration concept will be discussed and possible solutions will be presented. Biography: Wolfgang Stolz received the M.S. in physics (diploma) from the University of Heidelberg (Germany) in 1982. He performed his Ph.D. work in physics at the Max‐Planck‐Institute for Solid State Research, Stuttgart (Germany) and obtained the Ph.D. degree from the University of Stuttgart (Germany) in 1986. He received the Habilitation degree in experimental physics from the University of Marburg (Germany) in 1994. Currently he is co‐head of the Structure and Technology Research Laboratory in the Material Sciences Center at Philipps‐University of Marburg (Germany), Adjunct Professor at the Optical Sciences Center of the University of Arizona, Tucson (USA) and Chief Technology Officer at NAsP III/V GmbH Marburg (Germany). 3 His fields of research include the epitaxial growth of III/V‐compound semiconductor materials and related heterostructures, the (opto)electronic properties and the integration of these heterostructures on Si‐substrate as well as realization of novel device concepts for electronic, laser and solar cell applications. 2/4 – YONGMIN LIU, Prof. Xiang’s Lab, UCB Mechanical Engineering, “Transformation Optics for Plasmonics and Photonics” Abstract: Transformation optics has recently attracted extensive interests, since it provides a novel design methodology for manipulating light at will. In this talk, I will first briefly discuss the interplay among transformation optics, metamaterials and plasmonics. Then I will show that surface plasmon polaritons (SPPs) can be manipulated in a prescribed manner by carefully controlling the dielectric material properties adjacent to a metal based on the transformation optics technique. Since the metal properties are completely unchanged, it provides a straightforward way for practical implementations. This approach can assist to tightly bound SPPs over a broad wavelength range at uneven and curved surfaces, where SPPs would normally suffer significant scattering losses. In addition, a plasmonic Luneburg lens and a plasmonic bend are demonstrated. Finally, I will present a new approach of designing a single photonic element that possesses simultaneously multiple distinct functions, such as double beam shifters along two different directions. These findings open up a new avenue to effectively scale down the size of future optical systems. Biography: Yongmin Liu received his Ph.D. from the University of California at Berkeley in 2009, under