Chapter 9 Light-emitting diodes (LED) Electro luminescence diodes and semiconductor are mainly manufactured as double heterostructure diodes lasers in optical telecommunication systems. In this structure the active region, where the recombination of charge carriers takes place, is surrounded by two layers with a larger band gap WG. The name double het- erostructure is due to the fact that both sides of the active region are surrounded with different semiconductor material (e.g. InGaAs-InP in Fig. 9.1). p - I n P n- oder p- E l e k t r o d e n I n G a A s P U 0 n - I n P (aktive Zone) Figure 9.1: Example of a double heterostructure diode Fig. 9.1 shows such a diode. Basically, it is a p-n diode, which is operated in forward direction. The charge carriers recombine under radiation in the active region. Fig. 9.2 shows the energy band diagram of a double heterostructure diode in forward direction during operation. A double heterostructure is characterized by a small active region with the band gap energy WG2 which is much smaller than the band gap energy of the sandwich layers WG1 and WG3. In a pure pn-junction the inversion condition WF n − WF p > WG can only be reached for very high currents. The trick of the double-heterostructure is that both, the electrons in the conduction band as well as the holes in the valence band are limited by energy barriers of the structure. As a result, simultaneously very large concentrations of holes and electrons are gathered in the very thin active region d. This provides a high spontaneous and stimulated emission. The thickness of the active layer in LEDs is typically around d ≤ 1 µm. In semiconductor lasers, this thickness can be reduced even to a few nanometers (i.e. a few atomic layers) (see also: quantum-well lasers in chapter HL-STRUK). Thus, even for low injected current densities, a high charge carrier concentration in the active region can be achieved. 1 Introduction to fiber optic communications ONT/ 2 ------------ ------ W G 1 W G 2 W G 3 W F p W F n + + + +++ + + + + + + n - I n P I n G a A s p - I n P d Figure 9.2: Energy-band diagram under forward bias 9.1 Electro luminescence diodes The recombination in electro luminescence diodes is mainly determined by the spontaneous emission. It is proportional to the product of electron density n in the conduction band and hole density p in the valence band. Rsp ∼ fL(1 − fV ) ∼ n · p (9.1) More precisely: Rsp = V · B · n · p (9.2) −10 cm3 where B is the recombination coefficient in the magnitude of 10 s . Assuming that n and p are much higher than in the thermodynamic equilibrium, the spontaneous emission rate per volume is of the form (without current injection): R dn dp sp = − = − = B · n · p (9.3) V dt dt The rate equations for the both carriers is given by dp dn R I = = − sp + (9.4) dt dt V e · V where I is the injection current. The dynamic modulation characteristics of an LED can be described by the spontaneous emission lifetime τsp. If the spontaneous emission is e.g. defined as Rsp=V = n/τsp , the charge carrier density n decay, after switching off the injection current I ( I = 0 ), is given by: ( ) · − t n = n0 exp (9.5) τsp The maximum modulation frequency can thus be estimated by: 1 fg ≈ (9.6) 2π · τsp Introduction to fiber optic communications ONT/ 3 1. Undoped active region For an undoped active region, the charge neutrality n = p applies and therefore: dn R ! n = − sp = −B · n2 = − (9.7) dt V τsp with 1 τ = (9.8) sp B · n Hence, the mean lifetime decreases with increasing carrier injection. For a fast modulation a high carrier injection (or high n) is required. · 18 −3 · −10 cm3 Example: Assuming n = 3 10 cm and B = 2 10 s the lifetime of the spontaneous emission is τsp = 1:7 ns. Such an LED is thus modulatable up to about 100 MHz. 2. Doped active region In a doped active region n and p are not necessarily much larger than in the thermodynamic equilib- rium. For this reason, Eq. (9.7) has to be modified. (a) p-doping with the acceptor concentration NA p ≈ n + NA (9.9) dn = −B · n · p = −B · n · (n + N ) (9.10) dt A 1 ) τsp = (9.11) B · (n + NA) (b) n-doping with the donor concentration ND n ≈ p + ND (9.12) dp = −B · p · (p + N ) (9.13) dt D 1 ) τsp = (9.14) B · (p + ND) For ND ≫ p and NA ≫ n , respectively, the mean lifetime of a doped active region becomes largely independent of the charge carrier concentration. With increasing doping, the LED can be modulated Introduction to fiber optic communications ONT/ 4 more quickly. This, however, increases the non-radiative recombination with the lifetime τns. At high non-radiative recombination, it is reasonable, to define an effective lifetime τe: 1 1 1 = + (9.15) τe τsp τns in which for a high doping τe becomes relatively short. Therefore a high modulation frequency f = 1 is feasible (at the cost of efficiency). g 2π·τe Figure 9.3: Surface-emitting diode (Burrus-type LED) To ensure a good heat dissipation, it is important that the active region is located close to the heat sink. The current flow has to be limited to a spot size of the diameter dL. In Fig. 9.3 for example the active region consists of GaAs where the heterostructures are made of GaAlAs on a substrate of GaAs. Since in this case, for example, the substrate is not transparent for the emission wavelength, a well is etched into the substrate in order to bring in the fiber (Burrus-type LED). The light emission of the LED, shown in Fig. 9.3, is perpendicular to the layer sequence. Such an LED is also called a surface-emitting LED. Example: For a typical dimension with the data dL = 30 µm Diameter of the light spot d = 0:5 µm Thickness of the active region I = 100 mA Injection current n and τe ( = τsp should be determined by assuming τns = 1 ). π · 2 · · −10 3 The active volume is V = 4 dL d = 3:5 10 cm . Due to Eq. (9.4) and Eq. (9.7) and assuming d τe = τsp in steady state ( dt = 0): τ · I n = e (9.16) e · V According to Eq. (9.8), for an undoped region, Eq. (9.16) can be written as I n2 = (9.17) e · V · B Introduction to fiber optic communications ONT/ 5 · −10 cm3 · −19 With B = 2 10 s , e = 1:6 10 As and the assumed data above the charge carrier density results 18 −3 in n = 3 · 10 cm . Therefore the effective mean lifetime is τe = 1:7 ns corresponding to the limiting frequency of approximately fg ≈ 100 MHz . 9.2 Optical power output The efficiency of an LED - defied as the ratio of emitted optical power to electrical power input - is usually relatively low (in the order of a few percent). Because of the high refractive index of the active region ( n ≈ 3; 5 ) the largest part of the spontaneous emission is totally reflected and is not emitted out of the semiconductor. The non-radiative recombination also reduces the efficiency. Since the quantity of the non-radiative recombination depends on the doping, the power output of the diode also depends on the doping, leading to a dependency to the cutoff frequency fg of the diode (Fig. 9.4). Instead of the output power P it is customary to declare the radiance SR. It Figure 9.4: Output Power of diodes with different cutoff frequencies fg (Light spot diameter dL = 50 µm , I = 300 mA) W is defined as the output power per dihedral and solid angle unit and is of the dimension cm2sr ( sr ^= unit of the solid angle, actually dimensionless). The LED as surface-emitter has a Lambertian radiation pattern (circular radiation pattern in Fig. 9.3): S(γ) = SR cos(γ) (9.18) The total emitted power is thus Z π P = · d2 S(γ) dΩ (9.19) 0 4 L where the integration in Eq. (9.19) is determined by integrating over a half space. Introduction to fiber optic communications ONT/ 6 Hence (see also Fig. 9.5) π Z2 π π2 P = · d2 · S 2π sin(γ) cos(γ) dγ = · d2 · S (9.20) 0 4 L R 4 L R 0 d g d 2 s i n d g W = ×p g×g 1 Figure 9.5: The solid angle element dΩ W Example: Assuming SR = 100 cm2sr and dL = 50 µm the total emitted output power is P0 = 6:2 mW. 9.3 Coupling of an LED to a step-index fiber Initially, it is assumed that the diameter of the LED light spot is greater than the diameter of the fiber ( dL > 2a ). The LED and the fiber should be arranged as shown in Fig. 9.3. The numerical aperture of the fiber should be sufficiently small, so that a constant power density S(γ) can be assumed for all acceptance angles. With π · a2 Surface of the fiber end · 2 π AN acceptance angle the power P1 coupled into the step-index fiber is given by: · 2 · 2 · 2 P1 = SR π a AN (9.21) W Example: SR = 100 cm2sr , a = 25 µm , AN = 0:2 ) P1 = 0:25 mW (9.22) The coupling efficiency is determined by the ratio of the coupled power P1 to the total emitted power P0.