Strong, anisotropic anomalous Hall effect and spin Hall effect in chiral antiferromagnetic compounds Mn3X (X = Ge, Sn, Ga, Ir, Rh and Pt) Yang Zhang,1, 2 Yan Sun,1 Hao Yang,1, 3 Jakub Zelezn´y,ˇ 1 Stuart P. P. Parkin,3 Claudia Felser,1 and Binghai Yan1, 4, ∗ 1Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany 2Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany 3Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany 4Max Planck Institute for the Physics of Complex Systems, 01187 Dresden,Germany We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn3X (X = Ge, Sn, Ga, Ir, Rh and Pt) by ab initio band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn3X materials exhibit a non-collinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We −1 point out that Mn3Ga shows a large SHC of about 600 (~=e)(Ω · cm) . Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagetic materials. I. INTRODUCTION The anomalous Hall effect (AHE)1 and spin Hall ef- fect (SHE)2 are very important members of the family of Hall effects. The AHE is characterized by a transverse voltage generated by a longitudinal charge current usu- ally in a ferromagnetic (FM) metal. The AHE can be generalized to the case of the SHE in nonmagnetic ma- terials in which Mott scattering3 leads to the deflection of spin-up and -down charge carriers in opposite direc- tions, owing to spin-orbit coupling (SOC), as illustrated in Fig. 1. Thus, a longitudinal charge current can gen- FIG. 1. Schematic illustrations of (a) the anomalous Hall erate opposite spin accumulations along opposing edges effect and (b) the spin Hall effect from the viewpoint of spin- in the transverse direction to the current. On the con- dependent Mott scattering. (c) The anomalous Hall effect trary, a spin current can also induce a transverse voltage in collinear FM, collinear AFM, chiral FM, and chiral AFM drop, in an effect called the inverse SHE. Both the AHE systems. ρxy, M, λSOC and Si ·(Sj ×Sk) represent the anoma- and SHE are of particular interest for spintronic applica- lous Hall resistivity, magnetization, strength of SOC and the tions4{6 (and references therein) in which spin currents scalar spin chirality, respectively. can be used to manipulate magnetic moments, for ex- ample, switching the state of magnetization of magnetic nano-elements, or for inducing the very efficient motion charge motion in the same way as a real magnetic field9. of domain walls7,8. Thus, the SHE has recently attracted In a collinear AFM, it is not surprising that the AHE much attention by both experimentalists and theorists, vanishes due to the spin-up and -down conduction elec- and there has been widespread efforts to search for can- tron symmetry, or rather the existence of a symmetry by didate materials that exhibit strong AHE or SHE. combining a time-reversal symmetry operation and a lat- The AHE and SHE originate from the electronic and tice translation. In a chiral ferromagnet where magnetic arXiv:1610.04034v2 [cond-mat.mtrl-sci] 4 Apr 2017 magnetic structures of materials and have both extrin- moments are tilted in a lattice, it was recently found that sic and intrinsic origins. Extrinsic contributions depend the aforementioned fictitious magnetic field can also be 10,11 sensitively on impurity scattering while intrinsic effects generated by the scalar spin chirality , Si · (Sj × Sk) are derived from properties of the band structure. It is (Si;j;k denote three non-coplanar spins), which does not the intrinsic AHE and SHE that are the subject of this necessarily involve SOC. When an electron makes a loop article. For the AHE of an ordinary collinear ferromag- trajectory in a chiral FM lattice, the electron acquires net, it has been established that the Berry curvature, a a real-space Berry phase due to double exchange inter- quantity closely determined by the band structure, acts actions with the chiral lattice spins. The correspond- as a fictitious magnetic field in momentum space, that is ing AHE has been referred to as a so-called real-space derived from the magnetization and SOC, and affects the topological Hall effect in the literature (e.g.12). In a chi- 2 ral AFM in which the magnetic moments are coplanar, Sec. III. In Sec. IV, we discuss the results of our calcu- the topological Hall effect disappears because of the zero lations with the assistance of symmetry analysis, where spin chirality. However, an AHE can still exist due to the Mn3X compounds are classified into two groups ac- a nonzero Berry curvature induced by the SOC13. In- cording to their crystal and magnetic structures. Finally, deed, a strong AHE was recently observed in the chiral we summarize our results in Sec. V. 13{16 AFM compounds Mn3Sn and Mn3Ge . In principle, the SHE exists generically in systems with strong SOC. It has been studied II. METHODS The anomalous Hall conductivity (AHC) and spin Hall conductivity (SHC) characterize the AHE and SHE, re- in nonmagnetic 17{20 as well as antiferromagnetic20{24 spectively. In addition, the spin lifetime and related spin metals. Very recently, a strong SHE was experimentally manipulation methods are important ingredients for the 25 discovered in another chiral AFM compound Mn3Ir . SHE device applications, but these aspects are beyond Therefore, chiral AFM materials are appealing candi- the scope of the current study. The AHC and SHC have dates for finding significant AHE and SHE. They have been calculated using the Berry phase that we have deter- also stimulated the search for Weyl points in the same mined from ab initio band structures. Density-functional 26 family of materials and exotic magneto-optical Kerr ef- theory (DFT) calculations were performed for the Mn3X fect27. bulk crystals with the Vienna Ab − initio Simulation In this work, we have performed a comprehensive study Package (vasp)28 within the generalized gradient approx- 29 of the intrinsic AHE and SHE of the compounds Mn3X imation (GGA) . The SOC was included in our cal- (X = Ge, Sn, Ga, Ir, Rh and Pt), using ab initio Berry culations. The material-specific Hamiltonians were es- phase calculations. These compounds exhibit a chiral tablished by projecting the DFT Bloch wave functions AFM order well above room temperature (see Table I). onto maximally localized Wannier functions (MLWFs) This article is organized as follows. We first introduce the 30. Based on these tight-binding Hamiltonians, that in- ab initio method and the linear-response method that we clude realistic material parameters, we have calculated have used to compute the AHE and SHE in Sec. II. We the intrinsic AHC and SHC by using the Kubo formula then discuss the relationship of the symmetry of the crys- approach within the linear response1,2,9,31. The AHC tal lattice and magnetic lattice to the SHC and AHC in (σαβ) is obtained from e2 X Z d3~k σ = − f (~k)Ω (~k); αβ (2π)3 n n ~ n BZ (1) ~ ~ ~ ~ ~ 2 X < un(k)jv^αjum(k) >< um(k)jv^βjun(k) > Ωn(k) = 2i ; ~ ~ ~ 2 m6=n (En(k) − Em(k)) i ^ wherev ^α(β,γ) = [H; r^α(β,γ)] is the velocity operator with jα generated by a longitudinal electric field Eβ, which ~ ~ satisfies J = σ E . For the evaluation of the velocity α; β; γ = x; y; z;r ^α is the position operator. fn(k) is the α αβ β Fermi-Dirac distribution. ju (~k) > and E (~k) are the operator we assume for simplicity that the position op- n n erator is diagonal in the Wannier basis, as is commonly eigenvector and eigenvalue of the Hamiltonian H^ (~k), re- done in tight-binding calculations. ~ spectively. Ωn(k) is the Berry curvature in momentum The intrinsic SHC can be obtained by replacing the space, and the corresponding AHC σαβ can be evaluated ^γ velocity operator with the spin current operator Jα = by summing the Berry curvature over the Brillouin zone 1 fv^ ; s^ g, wheres ^ is the spin operator. The SHC then (BZ) for all the occupied bands. Here σαβ corresponds 2 α γ γ to a 3 × 3 matrix and indicates a transverse Hall current has the form of e X Z d3~k σγ = f (~k)Ωγ (~k); αβ (2π)3 n n,αβ ~ n BZ (2) ~ ^γ ~ ~ ~ X < un(k)jJ jum(k) >< um(k)jv^βjun(k) > Ωγ (~k) = 2i 2 α ; n,αβ ~ ~ ~ 2 m6=n (En(k) − Em(k)) 3 γ ~ Ωn,αβ(k) is referred to as the spin Berry curvature in was revealed, as illustrated in Fig. 2a, in earlier DFT the following, in order to distinguish it from the Berry calculations40. The magnetic ordering temperatures are ~ ~ γ above 365 K for all these three compounds, as shown curvature Ωn(k). The SHC (σαβ; α; β; γ = x; y; z) is a third-order tensor (3 × 3 × 3) and represents the spin in Table I.