® ™ Applied Centura Tetra EUV Mask Etch System Enabling EUV Photomask Technology Silicon Systems Group Sept 19th, 2011 SILICON SYSTEMS GROUP External Use Applied’s Innovations Enabling Inflections Centura High-k ALD DPN HD Versa™ XLR PVD SIP™ Co PVD Vantage Vulcan™ RTP ® ™ Reflexion GT for W Black Diamond® 3 Tetra™ EUV Conforma™ Doping Nanocure™ 3 Centris™ Etch Avenir™ RF PVD Ni ™ ™ ™ ™ DFinder Inspection Tetra X Silvia Etch Eterna FCVD ® ™ ™ Avenir™ RF PVD Gate Raider GT Aera3 Avila CVD ™ ™ ™ Siconi™ for Epi Centinel PVD / ALD Mesa Etch InVia CVD ™ ® ™ ® ™ Astra DSA Anneal Reflexion GT for Cu UVision 4 Brightfield Raider-S ECD TRANSISTOR INTERCONNECT ADVANCED WAFER-LEVEL PATTERNING PACKAGING 2 External Use The Photomask transfers a patterned image onto a wafer 3 External Use * EUVL Infrastructure Is Under Development Photomask Optics Mask Blank Mask Write Reflective Optics Vacuum Contained Mask Etch Mask Clean 6 Projection Mirrors M2 Mask Inspect Ready for Scanner M4 M1 M3 M6 M5 Source Resist Discharge-Produced Plasma Incoming Wafer Resist Deposition Laser-Produced Plasma Pattern Transfer Ready for Scanner Photomask etch is a critical technology for EUVL transition * EUVL = Extreme Ultra-Violet Lithography 4 SILICON SYSTEMS GROUP External Use Photomask Sees Paradigm Change With EUVL Conventional lithography EUV lithography Transmission photomask Reflection photomask 4 layers, 4 materials 106 layers, 8 materials Resist ARC Film Resist Absorber Layer Capping Layer ARC* Film Bragg Reflector Absorber Layer (100 layers) Fused Silica Substrate Doped Fused Silica Substrate Backside Conducting Layer Short EUV wavelength would be absorbed in a transmission mask * ARC = Anti-Reflective Coating 5 SILICON SYSTEMS GROUP External Use EUV Photomask As Deployed In Reflection Mode Conventional lithography EUV lithography Transmission-based Reflection-based On-axis optics Off-axis optics Mask Source M2 Mask M4 Source M3 M1 M6 Mirrors Projection Lens Resist M5 Resist Wafer Wafer Image transfer pathway has now changed Reference: Banqiu Wu and Ajay Kumar, Applied Materials, Extreme Ultraviolet Lithography, May 2009 6 External Use Image Resolution Drives Mask Evolution Increases Mask Etch Challenge A. Altering features on mask to achieve desired feature shapes on wafer (a) No OPC* (b) Mild OPC (c) Medium OPC (d) Aggressive OPC Size adjustment Hammerheads + serifs Scatter bars + serifs B. New materials on mask improve resolution using interference techniques Resist Resist ARC layer ARC layer Absorber layer Absorber layer Phase shift layer Fused silica substrate FusedFused silicasilica substratesubstrate Binary mask Phase shift mask Includes phase shift layer C. Wavelength shrink requires complex reflector element Bragg Reflector (100 layers) * OPC = Optical Proximity Correction | Source: B. Enyon & B. Wu, Photomask Fabrication Technology, Lithography, 2005 7 SILICON SYSTEMS GROUP External Use A Decade Of Tetra Product Leadership Delivering Innovations For Customer Needs Conventional Regime EUVL* Regime Tetra EUV 2011 Mean-to-Target Tetra X Zero-loss cap layer 2010 Vertical Mean-to-Target sidewalls Tetra III 2007 Aggressive Mask Etch Challenge Tetra II OPC Zero defects 2005 Tetra Moderate 2001 OPC Advanced Mild OPC binary mask Reflective Phase shift Phase shift Phase shift mask Binary mask mask mask mask 130nm 90nm 65nm 45nm 32nm 22nm 15nm 10nm Technology Node * EUVL = Extreme Ultraviolet lithography | Mean-to-Target is a mask-to-mask repeatability measurement 8 External Use Leadership For The Next Decade Tetra EUV Offers The Ideal Anisotropic Etch Patterned Mask Post ARC + Absorber Etch Resist ARC Layer Absorber Layer Capping Layer Bragg Reflector (100 layers) Doped Fused Silica Substrate . Vertical sidewalls (90º ± 0.5º) needed for off-axis optics . Ultra-low defectivity enabled by new chemistry and chamber . Best-in-class CD* uniformity . New process to etch new materials; no cap layer removal * CD = Critical dimension 9 External Use Applied Mask Etch Lab Unequaled Customer Engagement Capability Characterization Technology Leadership Team . Full suite of metrology and . EUVL review papers in top tier . Best-in-class technology and inspection tools in the lab journals like APL*, JVST* product engineering teams . In-house demo tools to etch . Authored subject-matter- . Focused on strong customer conventional and EUV masks expertise books on EUVL support with a global footprint . Advanced services offerings for high tool uptime & productivity * APL = Applied Physics Letters | * JVST = Journal of Vacuum Science and Technology 10 External Use 11 External Use .