Western Michigan University ScholarWorks at WMU Master's Theses Graduate College 12-1987 A Study of Ion Implanted Silicon Using Rutherford Backscattering Spectroscopy with Ion Channeling Thomas J. Pollock Follow this and additional works at: https://scholarworks.wmich.edu/masters_theses Part of the Atomic, Molecular and Optical Physics Commons Recommended Citation Pollock, Thomas J., "A Study of Ion Implanted Silicon Using Rutherford Backscattering Spectroscopy with Ion Channeling" (1987). Master's Theses. 1245. https://scholarworks.wmich.edu/masters_theses/1245 This Masters Thesis-Open Access is brought to you for free and open access by the Graduate College at ScholarWorks at WMU. It has been accepted for inclusion in Master's Theses by an authorized administrator of ScholarWorks at WMU. For more information, please contact [email protected]. A STUDY OF ION IMPLANTED SILICON USING RUTHERFORD BACKSCATTERING SPECTROSCOPY WITH ION CHANNELING by Thomas J. Pollock A Thesis Submitted to the Faculty of The Graduate College in partial fulfillment of the requirements for the Degree of Master of Arts Department of Physics Western Michigan University Kalamazoo, Michigan December 1987 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. A STUDY OF ION IMPLANTED SILICON USING RUTHERFORD BACKSCATTERING SPECTROSCOPY WITH ION CHANNELING Thomas J. Pollock, M.A. Western Michigan University, 1985 Rutherford Backscattering Spectroscopy with channeling is the only nondestructive method for analyzing crystals which have been ion implanted. An RBS with channeling procedure has been established at the Accelerator Laboratory of Western Michigan University. It utilizes a tandem Van de Graaff accelerator for an incident helium beam, a goniometer for crystal alignment, and a computer for experi­ mental control and data aquisition. State of the art measurements can be made with accuracies comparable to other labs. Specifically, ion implanted silicon was studied wherein crystal damage due to implanting was found to vary directly with implanting energy and fluence and was also reduced by subsequent annealing. Further research efforts will find this experimental setup very productive. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. ACKNOWLEDGEMENTS Very special thanks go to my advisor, Dr. Stephen Ferguson, for his gracious patience and insight. I would like to thank Leo Parpart and Chuck Mielke for their needed assistence. I also would like to thank WMU’s Physics Department for a rewarding and learned degree. We learn to understand. Then we have a breakthrough and understand we need to learn more. Thomas J. Pollock ii Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. 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University Miaorilms International 300 N. Zeeb Road Ann Arbor, Ml 48106 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Order Number 1332405 A study of ion implanted silicon using Rutherford Backscattering Spectroscopy with ion channeling Pollock, Thomas J., M.A. Western Michigan University, 1987 UMI 300 N. Zeeb Rd. Ann Arbor, MI 48106 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. PLEASE NOTE: In all cases this material has been filmed in the best possible way from the available copy. Problems encountered with this document have been identified here with a check mark V . 1. Glossy photographs or pages_____ 2. Colored illustrations, paper or print_______ 3. 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TABLE OF CONTENTS ACKNOWLEDGEMENTS.................................... ii LIST OF F I G U R E S ...................................... vi INTRODUCTION .................. 1 REVIEW OF THEORY .......................................... 3 Rutherford Scattering ...................................... 3 Ion C h a n n e l i n g .............................................. 5 Interpretation of Spectra... ............................... 6 EXPERIMENTAL SETUP ............................................ 14 G o n i o m e t e r ...................... 16 C o m p u t e r ....................................................20 EXPERIMENTAL PROCEDURE ...................................... 22 Sample Preparation and Mounting ............................ 22 Locating a C h a n n e l .......................... 23 Annealing Procedure ........................................ 27 RESULTS ........................................................31 CONCLUSION AND RECOMMENDATIONS ...................... ..... 40 APPENDICES............................ 43 A. CHAN Program . ..................................... 43 B. Use and Production of CP-4A Etchant...................... 49 C. Energy Calibration of Spectra............ 51 BIBLIOGRAPHY .................................................. 54 iii Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. LIST OF FIGURES 1. Critical Angle .......................... 7 2. Spectra for Single Atom Crystal.............. 9 3. Spectra of Implanted Crystal . .................... 10 4. True Interstitial I m p u r i t y .................................. 13 5. Accelerator Layout ........................................ 15 6. Scattering C h a m b e r .......................................... 17 7. Goniometer ............ 18 8. Mechanical Drawing of Goniometer .......................... 19 9. Horizontal 360 Degree S c a n ..................................24 10. Polar P l o t .................... 25 11. Gold on Silicon Spectra...................................... 29 12. Unimplanted Silicon Spectra........................ 30 13. Implanted Silicon Spectra ................................. .33 14. Implanted Silicon Spectra ................................... 34 15. Implanted Silicon Spectra ................................... 36 16. Implanted Silicon Spectra ................................. 37 17. Spectra of Annealed Silicon.................................. 39 18. Detector at Glancing A n g l e .......................... 42 iv Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. INTRODUCTION Nondestructive analyses of the near surface of a material can be done with Rutherford Backscattering Spectroscopy (RBS). Furthermore, using