2017 IEDM Conference Proceedings For More Information Social Networks: IEDM Online: ieee-iedm.org ieee-iedm.org/social-media Table of Contents Intro .....................................................3 Committees ...........................................3 Topics of Interest ....................................6 Program: Tutorials ................................................8 Short Courses ........................................8 Plenary Session ......................................8 Focus Session ......................................10 MRAM Posters and Forum .....................11 Technical Program ................................13 Evening Panel Discussion .....................14 Entrepreneur’s Luncheon ........................14 Exhibits & Exhibit Events .......................14 Abstracts, Bios for Tutorials, Short Courses & Technical Program ......................Appendix 2020 IEEE International Electron Devices Meeting 2 Intro IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the fl agship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. Digital & Social Media •LinkedIn: https://www.linkedin.com/groups/7475096/ •Twitter: https://twitter.com/ieee_iedm •Facebook: https://www.facebook.com/IEEE.IEDM •YouTube: https://www.youtube.com/channel/UC9X-8YPHtsy3SMQwU0yZdTg •Wikipedia: https://en.wikipedia.org/wiki/International_Electron_Devices_Meeting Committees Executive Committee General Chair Tutorial Chair European Arrangements Stefan De Gendt Su Jin Ahn Co-Chair imec Samsung Kirsten Moselund Leuven, Belgium Gyeonggi-do, Korea IBM Zurich Technical Program Chair Focus Session Chair Ruschlikon, Switzerland Ken Rim Merlyne de Souza European Arrangements Qualcomm University of Sheffi eld Co-Chair San Diego, CA Sheffi eld, UK Jan Hoentschel Technical Program Vice Publicity Chair Globalfoundries Chair Barbara De Salvo Exhibits Chair Mariko Takayanagi CEA-LETI Tibor Grasser Toshiba Grenoble, France TU Wien Tokyo, Japan Publicity Vice Chair Vienna, Austria Publications Chair Suman Banerjee Conference Managers Martin Giles Texas Instruments Phyllis Mahoney Intel Asian Arrangements Widerkehr and Associates Hillsboro, OR Co-Chair Montgomery Village, MD Short Course Chair Yoosang Hwang Suman Datta Samsung Polly Hocking University of Notre Dame Gyeonggi-do, Korea Widerkehr and Associates Montgomery Village, MD Notre Dame, IN Asian Arrangements Short Course Vice Chair Co-Chair Dina Triyoso Shyh-Horng Yang Globalfoundries TSMC Malta, NY Hsinchu, Taiwan 2020 IEEE International Electron Devices Meeting 3 Circuit and Device Assaf Lahav Miaomiao Wang Interaction Committee Tower Semiconductor IBM Curtis Tsai, Chair Tetsu Morooka Ehrenfried Zschech Intel Toshiba FhG Anne-Johan Annema Arokia Nathan Optoelectronics, Displays, University of Twente Cambridge University and Imagers Committee Rihito Kuroda, Chair Yen-Ming (James) Chen Tina Ng Tohoku University TSMC University of San Diego Edoardo Charbon Chung-Hsun Lin Boon S. Ooi EPFL GlobalFoundries KAUST Lindsay Grant Anda Mocuta Soren Steudel Omnivision Technologies IMEC IMEC Changhee Lee Kang-ill Seo Akira Terakawa Seoul National University Samsung Panasonic Arokia Nathan Koji Tsunoda Zhiping Zhou Cambridge University Fujitsu Peking University Boon S. Ooi Elisa Vianello Characterization, Reliability KAUST CEA-Leti and Yield Committee Jungwoo Joh, Chair Sara Pellegrini Runsheng Wang Texas Instruments STMicroelectronics Peking University Hideki Aono Toshikatsu Sakai Yanfeng Wang Renesas NHK Nvidia Jiezhi Chen Vyshnavi Suntharalingam Greg Yeric Shandong University MIT Lincoln Laboratory ARM Paul Hurley Zhiping Zhou Shimeng Yu Tyndall Peking University ASU MoonYoung Jeong Lars Zimmerman Jun Yuan Qualcomm Samsung IHP Qualcomm Memory Technology Optoelectronics, Displays, Chris Kim Committee and Imagers University of Minnesota Meng-Fan Chang, Chair Ryoichi Ishihara, Chair Seokkiu Lee National Tsing Hua University TU Delft SK Hynix The Netherlands Sungyong Chung Dimitri Linten SK Hynix Seth Bank IMEC UT Austin Pei-Ying (Penny) Du Tanya Nigam Macronix Kyung Cheol Choi GlobalFoundries KAIST Daniele Ielmini Anthony S. Oates Politecnico di Milano Rihito Kuroda TSMC Tohoku University Gwan-Hyeob Koh Cora Salm Samsung John Kymissis University of Twente Columbia University Ming Liu Chinese Academy of Science 2020 IEEE International Electron Devices Meeting 4 Gabriele Navarro Nano Device Technology John Dukovic CEA-Leti Committee Applied Materials Fabio Pellizzer Aaron D. Franklin, Chair Guilhem Larrieu Micron Duke University CNRS LAAS John Paul Strachan Deji Akinwande Sandy Liao HP UT Austin Intel Luc Thomas Kuan-Lun (Alan) Cheng Pierre Morin Headway TSMC imec Rainer Waser Wei-Chih Chien Bich-Yen Nguyen RWTH Macronix SOITEC Takeshi Yamaguchi Michael Flatte Hansu Oh Toshiba Iowa University Samsung Modeling and Simulation Joachim Knoch Mitsuhiro Togo Committee Technical University of Aachen GlobalFoundries Denis Rideau, Chair Takahiro Mori ST Microelectronics Qi Xie AIST ASM Stephen Cea Iuliana Radu Power Devices / Compound Intel IMEC Semiconductor and High Raphael Clerc Speed Devices Committee Rossella Ranica Institute of Optics ST Microelectronics Clemens Ostermaier, Chair Infi neon Geert Eneman Heike Riel IMEC IBM Srabanti Chowduri UC Davis Seongdong Kim William Taylor SK hynix GlobalFoundries Shinsuke Harada AIST Yang Liu Lars-Erik Wernersson Zhejiang University Lund University Dae-Hyun Kim Kyungpook National University Mathieu Luisier Tomohiro Yamashita ETH Renesas Martin Kuball University of Bristol Masumi Saitoh Process and Manufacturing Toshiba Technology Committee Erik Lind Lund University Lee Smith Masao Inoue, Chair Renesas Synopsys Gaudenzio Meneghesso Padua University Victor Sverdlov Takashi Ando IBM TU Wien Shyh-Chiang Shen Georgia Tech Dragica Vasileska Lucille Arnaud CEA-Leti Arizona State University Jun Suda Nagoya University Richard Williams Hsin-Ping Chen TSMC IBM Han Wui Then Intel Zhou Xing Kuan-Neng Chen National Chiao-Tung University Nanyang Technological University Florin Udrea Cambridge University 2020 IEEE International Electron Devices Meeting 5 Tsutomu Uesugi Melissa Cowan Duygu Kuzum Toyota Intel UCSD Alon Vardy Yegan Erdem Bernard Legrand MIT Bilkrent University LAAS CNRS Sensors, MEMs, and Marc Faucher Yi Yang BioMEMS Committee IEMN-CNRS Tsinghua University Severine Le Gac, Chair University of Twente Montserrat Fernandez-Bolanos Jun-Bo Yoon EPFL KAIST Anupama Arun Enablence Technologies Songbin Gong UIUC Edwin Carlen Tsukuba University Jin-Woo Han NASA Topics of Interest CIRCUIT AND DEVICE INTERACTION (CDI) Papers are solicited in the areas of CMOS platform technology, circuit design challenges in emerging technologies, and device technology interactions. Platform technologies include III-Vs, SiGe/Ge, and other underlying technologies for the “next node” (N+1). Topics also include digital and analog device and circuit performance and scaling issues, technology-design co-optimization, power-performance-area analysis, the impact of future device structures on circuit design, circuit and architec- tural implications of interconnect technology and performance, manufacturability issues such as design for manufacturability and process control, and emerging circuit design and technology concepts, including neuromorphic and non-von Neumann circuit approaches. Submission of papers discussing interactions between advanced device technology and design issues such as variability, power constraints, physical layout effects and design complexity in memory, logic, analog, and mixed-signal circuits is encouraged. CHARACTERIZATION, RELIABILITY and YIELD (CRY) Papers are solicited in all areas of characterization, yield, and reliability, at both the front-end and back-end of the process. Topics include hot carriers, dielectric wear-out and breakdown, process charging damage, latch-up, ESD, soft errors, noise and mismatch behavior, variability/reliability interaction and time dependent variability, bias temperature instabilities, and thermal modeling at the device, circuit, and packaging level for memory, logic, analog, and novel device technologies. Other topics include interconnect reliability, electromigration, the impact of back-end processing on devices, chip- package inter- action, physics of failure analysis, and novel characterization techniques. Compound Semiconductor and High Speed Devices (CHS) Papers are solicited in the areas of compound semiconductor electronic devices and high-speed device technologies based on GaAs, InGaAs, InP, GaN, SiGe, Antimonides and their related alloys. Devices of interest include III-V MOS devices, ballistic devices, HBTs (III-V and group IV) and HEMTs, RF/microwave/millimeter-wave devices, SAW/BAW devices, and active and passive electron devices for analog applications. Topics include device physics, design, modeling, reliability and manufac- turing processes. MEMORY TECHNOLOGY (MT) Papers are solicited covering all memory related technology topics, including devices for neuromorphic computing appli- cations. Topics span the full range from novel cell concepts to fully integrated memories and manufacturing