Analog and Digital Electronics (18CSI34) – MODULE 2 2019 MOSFETS The Depletion-mode MOSFET: A piece of n material with an insulated gate on the left and a p region on the right. The p region is called the substrate. A thin layer of silicon dioxide (SiO2) is deposited on the left side of the channel which acts as an insulator. The gate is metallic. In the depletion-mode MOSFET with a negative gate voltage (Fig 14-2a), the VDD supply forces free electrons to flow from source to drain. These electrons flow through the narrow channel on the left of the p substrate. As with a JFET, the gate voltage controls the width of the channel. The more negative the gate voltage, the smaller the drain current. When the gate voltage is negative enough, the drain current is cut off. Therefore, the operation of a depletion- mode MOSFET is similar to that of a JFET when VGS is negative. Since the gate is insulated, we can also use a positive input voltage, as shown in Fig 14-2b. the positive gate voltage increases the number of free electrons flowing through the channel. The more positive the gate voltage, the greater the conduction from source to drain. Mrs. Swetha Vura, Asst. Prof., Dept. of Page 1 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 D-MOSFET Curves: For a typical n-channel, D-MOSFET, the curves above VGS=0 are positive and curves below are negative. When VGS=0V, the drain current will equal IDSS. When VGS is made negative, the drain current will be reduced. When VGS becomes positive, ID will increase following the square-law equation When VGSis negative, the D-MOSFET is operating in the depletion mode. When VGSis positive, it operates in enhancement mode. The D-MOSFET curves display ohmic, current-source and cutoff regions. The parabolic transconductance curve follows the square law relation and IDSS is the drain current with the gate shorted to the source. In a p-channel D-MOSFET consists a drain-to-source p-channel, along with a n-type substrate. The gate is insulated from the channel and the action of p-channel MOSFET is complementary of that of n-channel MOSFET. Mrs. Swetha Vura, Asst. Prof., Dept. of Page 2 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 Depletion-mode MOSFET Amplifiers: A depletion-mode MOSFET operates with positive or negative gate voltage. Because of this, we can set the Q point at VGS=0V. When the input signal goes positive, it increases ID above IDSS. When the input signal goes negative, it decreases ID below IDSS. Because there is no pn junction to forward bias, the input resistance of the MOSFET remains very high. Because IG=0, VGS=0V and ID=IDSS. Mrs. Swetha Vura, Asst. Prof., Dept. of Page 3 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 The drain voltage is As D-MOSFET is normally on device, it is possible to use self-bias by adding a source resistor. D-MOSFETs have relatively low-voltage gain, extremely high input resistance and excellent low noise properties. Some D-MOSFETs are dual gate devices where one gate can serve as the input signal point, while the other gate can be connected to an automatic gain control dc voltage. This allows the voltage gain of the MOSFET to be controlled and varied depending on the input signal strength. The Enhancement-Mode MOSFET: Without E-MOSFET, the personal computers that are now so widespread would not exist. The Basic Idea- The p-substrate extends all the way to the silicon dioxide. There is no longer an n- channel between source and drain. When the gate voltage is zero, the current between the source and drain is zero. Therefore, an E-MOSFET is normally off when the gate voltage is zero. When the gate is positive, it attracts free electrons into the p region. The free electrons recombine with the holes next to the silicon dioxide. When the gate voltage is positive enough, all the holes touching the silicon dioxide are filled and free electrons begin to flow from the source to the drain. The effect is same as creating a thin layer of n-type material next Mrs. Swetha Vura, Asst. Prof., Dept. of Page 4 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 to the silicon dioxide. This layer is called the n-type inversion layer. When it exists, free electrons can flow easily from source to drain. The minimum VGS that creates the n-type inversion layer is called the threshold voltage, VGS(th). When VGS is greater than VGS(th), an n-type inversion layer connects the source to the drain and drain current can flow. Typical values of VGS(th) for small signal devices are from 1 to 3V.The E-MOSFET is known as an enhancement-mode device,because a gate voltage greater than the threshold voltage enhances its conductivity. With zero gate voltage, an E-MOSFET is off. Therefore, the E-MOSFET is considered to be a normally off device. Drain Curves- A small signal E-MOSFET has a power rating of 1W or less. In the drain curves, the lowest curve is VGS(th) curve. When VGS is less than VGS(th), the drain current is approximately zero. When VGS is greater than VGS(th), the device turns on and the drain current is controlled by the gate voltage. The almost vertical part of the graph is the ohmic region, and the almost horizontal parts are the active region. When biased in the ohmic region, the E-MOSFET is equivalent to a resistor. When biased in the active region, it is equivalent to a current source. Although E- MOSFET can operate in the active region, the main use is the ohmic region. In the transconductance curve, there is no drain current until VGS=VGS(th). Thedrain current then increases rapidly until it reaches the saturation current ID(sat). Beyond this point, the device is biased in the ohmic region. Therefore, ID cannot increase even though VGS increases. To ensure hard saturation,a gate voltage of VGS(on) well above VGS(th) is used. Schematic Symbol- When VGS=0, the E-MOSFET is off because there is no conducting channel between source and drain. The schematic symbol has a broken channel line to indicate this normally off condition. The arrow points to the inversion layer, which acts like an n channel when the device is conducting. Mrs. Swetha Vura, Asst. Prof., Dept. of Page 5 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 Maximum Gate-Source Voltage- MOSFETs have a thin layer of silicon dioxide, an insulator that prevents gate current for positive as well as negative gate voltages. This insulating layer is thin and can be easily destroyed by excessive gate voltage. Some MOSFETs are protected by a built-in Zener diode in parallel with the gate and the source. CMOS: A way to reduce the current drain of a digital circuit is with complementary MOS (CMOS). In this approach, the IC designer combines n and p-channel MOSFETs. In Fig 14-21a, Q1 is a p-channel MOSFET and Q2 is a n-channel MOSFET. These two devices are complementary; that is, they have equal and opposite values of VGS(th), VGS(on), ID(on) and so on. This circuit is similar to a class B amplifier because one MOSFET conducts while the other is off. Basic Action- When a CMOS circuit is used in switching application, the input voltage is either high (+VDD) or low (0V). When the input voltage is high, Q1 is off and Q2 is on. In this case, the shorted Q2 pulls the output voltage down to ground. On the other hand, when the input Mrs. Swetha Vura, Asst. Prof., Dept. of Page 6 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 voltage is low, Q1is on and Q2 is off. Now, the shorted Q1 pulls the output voltage up to +VDD. Since the output voltage is inverted, the circuit is called a CMOS inverter. When the input voltage is zero, the output voltage is high. When the input voltage is high, the output voltage is low. Between this two, there is a crossover point where the input voltage equals VDD/2. Power Consumption- The main advantage of CMOS is its extremely low power consumption. Because both MOSFETs are in series, the quiescent current drain is determined by the nonconducting device. Since its resistance is in megaohms, the quiescent (idling) power consumption approaches zero. The power consumption increases when the input signal switches from low to high, and vice versa. The average power consumption is so small that CMOS circuits are often used for battery-powered applications such as calculators, digital watches, and hearing aids. E-MOSFET Amplifiers: The E-MOSFET is primarily used as a switch. VGS has to be greater than VGS(th) for drain current to flow. This eliminates self-bias, current-source bias, and zero bias because all these have depletion mode operation. Gate-bias and voltage-divider bias work well because they can achieve enhancement mode operation. The drain doesn’t start until VGS=VGS(th). E-MOSFET is a voltage-controlled normally off device. The drain current can be found by: Mrs. Swetha Vura, Asst. Prof., Dept. of Page 7 CSE Analog and Digital Electronics (18CSI34) – MODULE 2 2019 Op amps in Waveform conversion and Generation Circuits With op amps, we can convert sine wave to rectangular waves, rectangular waves to triangular waves, and so on.