NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com Typical Applications NPN Transistor with • Driving Circuit Zener Diode • Switching Applications 654 MAXIMUM RATINGS − NPN TRANSISTOR Rating Symbol Value Unit Z1 Q1 Collector−Emitter Voltage VCEO 40 V Collector−Base Voltage VCBO 60 V 1 23 Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 600 mA Collector Current − Peak ICM 900 mA 4 MAXIMUM RATINGS − ZENER DIODE 6 5 SC−74 Rating Symbol Value Unit 3 CASE 318F 1 2 Forward Voltage @ IF = 10 mA VF 0.9 V THERMAL CHARACTERISTICS MARKING DIAGRAM Rating Symbol Max Unit Total Device Dissipation FR−5 Board, PD ° (Note 1) @ TA = 25 C 380 mW M60MG G ° Thermal Resistance from RqJA 328 C/W Junction−to−Ambient ° Junction and Storage TJ, Tstg −55 to +150 C M60 = Device Code Temperature Range M = Date Code* G Stresses exceeding Maximum Ratings may damage the device. Maximum = Pb−Free Package Ratings are stress ratings only. Functional operation above the Recommended (Note: Microdot may be in either location) Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Date Code orientation may vary depending upon manufacturing location. 1. FR−4 Minimum Pad. ORDERING INFORMATION Device Package Shipping† NSM6056MT1G SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: March, 2011 − Rev. 0 NSM6056M/D NSM6056MT1G ° NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc ON CHARACTERISTICS (Note 3) DC Current Gain hFE (IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 − − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 − (IC = 10 mAdc, VCE = 1.0 Vdc) 80 − (IC = 150 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 500 mAdc, VCE = 2.0 Vdc) 40 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) − 0.4 (IC = 500 mAdc, IB = 50 mAdc) − 0.75 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) 0.75 0.95 (IC = 500 mAdc, IB = 50 mAdc) − 1.2 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW − 4 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos SWITCHING CHARACTERISTICS Delay Time (V = 30 Vdc, V = 2.0 Vdc, td − 15 CC EB ns I = 150 mAdc, I = 15 mAdc) Rise Time C B1 tr − 20 Storage Time (V = 30 Vdc, I = 150 mAdc, ts − 225 CC C ns I = I = 15 mAdc) Fall Time B1 B2 tf − 30 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ZENER DIODE − ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) ZZT Max dVZ/dt (mV/k) ZZK IZ IZ = IZT Test Zener Voltage VZ = 0.5 @ 10% IR @ VR @ IZT1 = 5 mA C pF Max @ W Current mA W Mod VR = 0 Device Izt mA Min Max Max Max mA V Min Max f = 1 MHz NSM6056MT1G 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200 http://onsemi.com 2 NSM6056MT1G TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR 500 450 VCE = 5.0 V ° TJ = 150 C V = 2.0 V 400 CE VCE = 1.0 V 350 25°C 300 250 200 -55°C 150 FE h , DC CURRENT GAIN h , DC CURRENT 100 50 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain 1.2 1.0 0.8 IC = 1.0 mA 10 mA 100 mA 300 mA 500 mA 0.6 0.4 0.2 CE V , COLLECTOR-EMITTER VOLTAGE (VOLTS) VOLTAGE V , COLLECTOR-EMITTER 0 0.001 0.01 0.1 110100 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 0.35 IC/IB = 10 0.30 0.25 150°C 0.20 0.15 25°C 0.10 -55°C 0.05 0 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VOLTAGE SATURATION VCE(sat), COLLECTOR-EMITTER Figure 3. Collector−Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 NSM6056MT1G TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR 1.1 1.0 IC/IB = 10 VCE = 2.0 V 1.0 0.9 0.9 −55°C 0.8 ° 0.8 −55 C 0.7 0.7 25°C EMITTER SATURA- EMITTER TURN ON − ° 25 C − 0.6 0.6 VOLTAGE (V) VOLTAGE TION VOLTAGE (V) TION VOLTAGE 0.5 , BASE 0.5 , BASE ° 0.4 150 C 0.4 ° BE(sat) BE(on) 150 C V V 0.3 0.3 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Base−Emitter Saturation Voltage vs. Figure 5. Base−Emitter Turn On Voltage vs. Collector Current Collector Current 1000 VCE = 1.0 V ° TA = 25 C BANDWIDTH (MHz) 100 − GAIN − , CURRENT T 10 f 0.1 110 100 1000 IC, COLLECTOR CURRENT (mA) Figure 6. Current−Gain−Bandwidth Product TYPICAL ELECTRICAL CHARACTERISTICS − ZENER DIODE 1000 100 150°C 10 , FORWARD CURRENT (mA) CURRENT , FORWARD F I 75°C 25°C 0°C 1.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, FORWARD VOLTAGE (V) Figure 7. Typical Forward Voltage http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F−05 6 ISSUE N 1 DATE 08 JUN 2012 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM 6 5 4 THICKNESS OF BASE MATERIAL. HE E 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. 1 23 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.90 1.00 1.10 0.035 0.039 0.043 b A1 0.01 0.06 0.10 0.001 0.002 0.004 e b 0.25 0.37 0.50 0.010 0.015 0.020 c 0.10 0.18 0.26 0.004 0.007 0.010 D 2.90 3.00 3.10 0.114 0.118 0.122 q E 1.30 1.50 1.70 0.051 0.059 0.067 c e 0.85 0.95 1.05 0.034 0.037 0.041 A L 0.20 0.40 0.60 0.008 0.016 0.024 0.05 (0.002) H E 2.50 2.75 3.00 0.099 0.108 0.118 q 0° − 10° 0° − 10° L A1 GENERIC SOLDERING FOOTPRINT* MARKING DIAGRAM* 2.4 0.094 XXX MG G 0.95 XXX = Specific Device Code 1.9 0.037 M = Date Code 0.074 0.95 G = Pb−Free Package 0.7 0.037 (Note: Microdot may be in either location) 0.028 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, 1.0 mm SCALE 10:1 ǒ Ǔ 0.039 inches may or may not be present. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. EMITTER 1 PIN 1. COLLECTOR 2 PIN 1. CHANNEL 1 PIN 1. CATHODE 2. ANODE 2. COLLECTOR 2. BASE 1 2. EMITTER 1/EMITTER 2 2. ANODE 2. ANODE 3. CATHODE 3. EMITTER 3. COLLECTOR 2 3. COLLECTOR 1 3. CHANNEL 2 3. CATHODE 4. CATHODE 4. NO CONNECTION 4. EMITTER 2 4. EMITTER 3 4. CHANNEL 3 4. CATHODE 5. ANODE 5. COLLECTOR 5. BASE 2 5. BASE 1/BASE 2/COLLECTOR 3 5. CATHODE 5. CATHODE 6. CATHODE 6. BASE 6. COLLECTOR 1 6. BASE 3 6. CHANNEL 4 6. CATHODE STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11: PIN 1. SOURCE 1 PIN 1. EMITTER 1 PIN 1. EMITTER 2 PIN 1. ANODE/CATHODE PIN 1. EMITTER 2. GATE 1 2. BASE 2 2. BASE 2 2. BASE 2. BASE 3.