IXYSPOWER NEW PRODUCT BRIEF Efficiency Through Technology 1200V GenX3™ IGBTs NEXT GENERATION 1200V igbtS foR poweR CONVERSION APPLICATIONS MARCH 2009 OVERVIEW IXYS expands its GenX3TM insulated gate bipolar transistor (IGBT) portfolio to 1200 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM IGBT process and utilize IXYS’ advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This new extension of GenX3TM IGBTs is a part of IXYS growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. Co- packed variants of these new devices are available with IXYS’ HiPerFREDTM (suffix “D1”) and SONIC-FRDTM (suffix “H1”) ultra-fast recovery diodes providing exceptional fast recovery and soft switching characteristics. These co-packed diodes minimize losses in hard switching applications, while maintaining superior soft recovery characteristics to minimize switching noise. Additional product attributes include avalanche capabilities and a square reverse bias safe operating area, allowing the device to safely switch in a snubberless hard switching application. IXYS 1200V GenX3TM IGBTs are offered in various standard and ISOPLUS packages with collector current ratings @ Tc=110oC from 20 amperes to 120 amperes. Standard packages include the TO-263, TO-247, PLUS247, TO-220, TO-264 & TO-268. List of possible applications include solar inverters, automatic voltage regulators, industrial battery chargers, wind turbine inverters, capacitor discharge circuits, electronic circuit breakers, resonant power conversion circuits, induction heating for industrial processing, uninterruptible power supplies, motor drives, switch-mode power supplies, power factor correction circuits, and welding machines. APPLICATIONS FEATURES BENEFITS Power inverters High current handling capability Space savings UPS International standard packages High power density Motor drives Optimized for low conduction & Low gate drive requirement SMPS switching losses PFC circuits Ultra fast anti-parallel diode Battery chargers (optional) Welding machines ISOPLUS package options Lamp ballast Avalanche rated In-rush current protection circuits Square RBSOA DC choppers Induction heating 1200V GenX3TM IGBTs Summary Table Part Ic25 Ic110 Vce (sat) Package Number Vces Tc = 25oC Tc = 110oC TJ = 25oC tfi typ Eoff typ RthJC Type A3-Class n Ultra Low V(sat) IGBTs n Up to 3kHz IXGA20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-263 IXGH20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-247 IXGP20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-220 IXGH32N120A3 1200V 75A 32A 2.35V 1240ns na 0.42oC/W TO-247 IXGT32N120A3 1200V 75A 32A 2.35V 1240ns na 0.42oC/W TO-268 IXGK120N120A3 1200V 240A 120A 2.3V 650ns 58mJ 0.15oC/W TO-264 IXGX120N120A3 1200V 240A 120A 2.3V 650ns 58mJ 0.15oC/W PLUS247 IXGK120N120A3 1200V 240A 120A 2.2V 680ns 58mJ 0.15oC/W TO-264 IXGX120N120A3 1200V 240A 120A 2.2V 680ns 58mJ 0.15oC/W PLUS247 B3-Class n Medium Speed IGBTs n 3kHz to 20kHz IXGA30N120B3 1200V na 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-263 IXGH30N120B3D1 1200V 50A 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-247 IXGP30N120B3 1200V na 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-220 IXGT30N120B3D1 1200V 50A 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-268 C3-Class n High Speed IGBTs n 20kHz to 50kHz IXGA24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-263 IXGH24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-247 IXGH24N120C3H1 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-247 IXGP24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-220 IXGR24N120C3D1 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 1oC/W ISOPLUS 247 IXGH30N120C3H1 1200V 48A 24(tc100)A 4.2V 280ns 1.3mJ 0.5oC/W TO-247 IXGH40N120C3 1200V 75A 40A 4.4V 298ns 1.6mJ 0.33oC/W TO-247 IXGH40N120C3D1 1200 75V 40A 4.4V 298ns 1.6mJ 0.33oC/W TO-247 IXGH50N120C3 1200V 75A 50A 4.2V 315ns 2.1mJ 0.27oC/W TO-247 Application Circuits L1 L1 D1 High Frequency PFC Boost Magnetic Field S Converter Q2 Q4 Q1 O D1 D2 Load L A AC Input R Q1 C1 Electric Grid C1 Full Bridge Lr Inverter P A D3 D4 High Frequency AC Cr N Q2 E Q3 Q5 AC L DC Rectifier Inverter Resonant Tank PFC and Gate Drive Gate Drive Controller Controller General Solar Inverter Basic Induction Heating Power System This figure illustrates a general solar inverter circuit. This circuit topology This figure illustrates a general induction heating power system. This circuit is comprised of a PFC boost converter stage and Full bridge power inverter topology is comprised of a rectifier stage, high frequency power inverter stage stage. Input power from a solar panel enters the power factor boost (in a form of a series half-bridge), and resonant tank circuit. An AC current converter and is further processed via a full bridge inverter power stage, originating from a power source is converted to a DC value via the rectifier which in turn enters the electric grid. stage. This DC value is then processed via a high frequency switching circuit which is then administered to a heating coil element. ISOPLUSTM Packages with Internal Alumina DCB Isolation* DCB • Provides 2500V, UL recognized isolation with superior Ceramic Bond wires Copper Copper Solder thermal performance (E153432). Leads • Improves termperature and power cycling capability. • Cost effective clip mounting. * IXYS Patented Packages, Patent No. 6,404,065 Chip * For information regarding IXYS ISoPLUS packages, visit http://www.ixys. Mould com/IXAN0022.pdf March 2009 PB120IGBTA3B3C3 1.3.