EE-202 Electronics-I- Field-Effect Transistors JFET

EE-202 Electronics-I- Field-Effect Transistors JFET

EE-202 Electronics-I- Chapter 10 Field-Effect Transistors JFET 1 FET FET (Field-Effect Transistors) - BJTs (Bipolar Junction Transistors). Similarities: • Amplifiers • Switching devices • Impedance matching circuits Differences: • FETs are voltage controlled devices, BJTs are current controlled devices. • FETs have a higher input impedance, BJTs have higher gains. • FETs are less sensitive to temperature variations and they are more easily integrated on ICs. • FETs are generally more sensitive to static than BJTs. 2 FET Types •JFET–– Junction Field-Effect Transistor •MOSFET –– Metal-Oxide Field-Effect Transistor .D-MOSFET –– Depletion MOSFET .E-MOSFET –– Enhancement MOSFET 3 JFET Construction There are two types of JFETs •n-channel •p-channel The n-channel is more widely used. There are three terminals. •Drain (D) and source (S) are connected to the n-channel •Gate (G) is connected to the p-type material 4 JFET Operating Characteristics Three basic operating conditions for a JFET: • VGS = 0, VDS increasing to some positive value • VGS < 0, VDS at some positive value • Voltage-controlled resistor 5 JFET Operating Characteristics VGS = 0, VDS increasing to some positive value When VGS = 0 and VDS is increased from 0 to a more positive voltage; • The depletion region between p-gate and n-channel increases • Increasing the depletion region, decreases the size of the n-channel • Increasing in the n-channel resistance, the ID current increases. 6 JFET Operating Characteristics VGS = 0, VDS increasing to some positive value: Pinch Off VGS = 0 and VDS is increased to a more positive voltage, the depletion zone gets so large that it pinches off the n-channel. The current in the n-channel (ID) would drop to 0 A, but it does just the opposite–as VDS increases, so does ID. 7 JFET Operating Characteristics VGS = 0, VDS increasing to some positive value: Saturation At the pinch-off point: • Increasing in VGS does not produce any increasing in ID. • VGS at pinch-off is denoted as Vp. • ID is at saturation or maximum. It is referred to as IDSS. • The ohmic value of the channel is maximum. 8 p-Channel JFETS The p-channel JFET is similar to the n-channel JFET, except the polarities and currents are reversed. 9 JFET Symbol 10 JFET Transfer Curve This graph shows the value of ID for a given value of VGS. 11.

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