© 2017 ROHM Co., Ltd. No. 60AP001E Rev.001 2017.4 Application Note SiC Power Devices and Modules Application Note Rev.003 Note: The evaluation data and other information described in this application note are the results of evaluation by ROHM under identical conditions and presented as references. We do not guarantee the characteristics described herein. © 2020 ROHM Co., Ltd. No. 63AN102E Rev.003 1/88 2020.11 SiC Power Devices and Modules Application Note Contents 1. SiC semiconductor ........................................................................................................................ 5 1.1 Physical properties and features of SiC .............................................................................................................. 5 1.2 Features as power devices ................................................................................................................................. 5 2. Features of SiC SBD ....................................................................................................................... 6 2.1 Device structure and features ............................................................................................................................. 6 2.2 Forward characteristics of SiC SBD .................................................................................................................... 7 2.3 Recovery characteristics of SiC SBD .................................................................................................................. 8 2.4 Forward surge characteristics of SiC SBD .......................................................................................................... 9 2.5 Precautions for using SiC SBD in series or parallel .......................................................................................... 10 2.5.1 Series connection ........................................................................................................................................ 10 2.5.2 Parallel connection ...................................................................................................................................... 10 3. Features of SiC MOSFET ............................................................................................................... 11 3.1 Device structure and features ........................................................................................................................... 11 3.2 Standardized on-resistance (RonA) .................................................................................................................. 12 3.3 VDS-ID characteristics ........................................................................................................................................ 13 3.4 Driving gate voltage and on-resistance ............................................................................................................. 14 3.5 Temperature coefficient of on-resistance .......................................................................................................... 15 3.6 VGS-ID characteristics ........................................................................................................................................ 16 3.7 Turn ON characteristics .................................................................................................................................... 17 3.8 Turn OFF characteristics ................................................................................................................................... 18 3.9 Internal gate resistance ..................................................................................................................................... 19 3.10 Recovery characteristics of body diode .......................................................................................................... 20 3.11 Temperature dependence of BV (breakdown voltage) .................................................................................... 21 3.12 1700 V SiC MOSFET for flyback ..................................................................................................................... 22 3.13 Third generation trench gate SiC MOSFET .................................................................................................... 23 3.14 Temperature dependence of switching characteristics.................................................................................... 24 3.15 Gate voltage dependence of switching characteristics ................................................................................... 25 3.16 Drain current dependence of switching speed ................................................................................................ 25 3.17 Effect of parasitic inductance on switching characteristics .............................................................................. 26 3.18 Kelvin source package .................................................................................................................................... 27 4. Evaluation board for discrete SiC MOSFET ...................................................................................... 28 4.1 Evaluation board for SiC MOSFET (discrete) ................................................................................................... 28 4.2 Case example of evaluation .............................................................................................................................. 29 5. Gate drive ................................................................................................................................... 32 ５.1 Cautions for circuit systems ............................................................................................................................ 32 5.1.1 Driving with pulse transformer ..................................................................................................................... 32 5.1.2 High-side driving with bootstrap system ...................................................................................................... 32 5.1.3 High-side driving with isolated power supply ............................................................................................... 32 5.1.4 Negative bias generation circuit .................................................................................................................. 33 ５.2 Buffer circuit .................................................................................................................................................... 34 ５.3 UVLO (under voltage lock out: function to prevent malfunction at low voltage) ............................................... 35 ５.4 Gate driver IC for SiC MOSFET ...................................................................................................................... 36 ５.5 Recommended gate voltage (VGS) .................................................................................................................. 37 © 2020 ROHM Co., Ltd. No. 63AN102E Rev.003 2/88 2020.11 SiC Power Devices and Modules Application Note ５.6 Recommended external gate resistance (RG_EXT) ........................................................................................... 38 ５.7 Recommended dead time (tDT) ........................................................................................................................ 39 ５.8 Countermeasures against self-turn-on ............................................................................................................ 40 ５.9 Countermeasures against negative surge ....................................................................................................... 41 ５.10 Short-circuit protection ................................................................................................................................... 42 5.10.1 DESAT ...................................................................................................................................................... 42 5.10.2 Short-circuit protection in MOSFET equipped with current sense terminal ............................................... 43 ５.11 Recommended layout .................................................................................................................................... 44 ５.12 Precautions for using MOSFET in series or parallel ...................................................................................... 46 5.12.1 Series connection ...................................................................................................................................... 46 5.12.2 Parallel connection .................................................................................................................................... 48 6. Features of SiC power module ....................................................................................................... 52 6.1 Features of SiC module .................................................................................................................................... 52 6.2 Circuit configuration .......................................................................................................................................... 52 6.3 NTC thermistor.................................................................................................................................................. 54 6.4 Installation method for power module ..............................................................................................................