l 79 (1991 ACTA YSICA OOICA Α 1 oc I Ieaioa Scoo o Semicoucig Comous asowiec 199 GALLIUM ARSENIDE AND RELATED COMPOUNDS FOR DEVICE APPLICATIONS WOO Uiesiy o Yok e o Eecoics esigo Yok YO 5 UK A MOGA Uiesiy o Waes Coege o Cai Cai UK (eceie Augus 199θ e eice aicaios o gaium aseie a eae I— comou a aoy semicoucos ae eiewe A age o eecoic eices is escie a e cue sae o e a eomace is iicae o eac ye o eice e eices wic wi e escie ae asee eeco eices - as osciaos u o G GaAs MESEs — e wokose micowae soi sae eice some mooiic micowae iegae cicui /MMIC/ a eeoucio eices e use o moecua eam eiay ME o gow I- semicoucos wi gea coo oe e oig moe acio o e cosiues a e ickess o e eiaye as emie e cosucio o eices wi aomicay au ieaces ewee egios o iee o- ig a aoy e eecoic eices wic make use o suc au ee o -ucios icue ig eeco moiiy asisos eeoucio ioa asiso a ase ioes A ume o oe eices ase o muie aie a quaum we sucues is aso escie icuig esoa ueig eices ACS umes 7Ey 73Κρ 7s Intrdtn Gaium aseie a eae III- comous wee is iesigae as semicoucig maeias oe iy yeas ago e maeia oeies o ese comous ossess some oa simiaiies wi ose o a aceya semi- couco siico ey ae a simia cysaie sucue a e ieaomic oig is agey coae [1] u e III— comous wee aso ecogise o (97 9 Woo Mogα ei oica a eecoic oeies suc as a iec a ga a ig eeco moiiy a wee o ou i siico o gemaium ese oeies e e omise o ew a uique eices suc as ig eiciecy ig emies a ig sesos a ig see swicig eices ies wee siico cou o eaiy comee e easos ei ese eecoic a oica oeies a e cose- que iees i gaium aseie GaAs a simia III- comous ie i e eaie aue o ei eeco eegy a sucues akig GaAs as yica o III— semicoucos i wic we ae ieese Gallium arsenide has a direct energy band gap. e miimum i e ε(k cue i e coucio a ies iecy aoe e maimum i e aece a i k-saceis aows iec iea ecomiaio o eecos a oes wi e emissio o ig eegy o e aoiae waeeg o e a ga aou 5 m; o oo ieacio is ecessay (ig 1 ece GaAs is sai o e a goo ooeecoic maeia a is use eesiey i ig-emiig ioes a semicouco ases Gallium arsenide can be made to have a very high resistivity. is is ecause e a ga o GaAs 13 e is eaiey age comae o 11 e o siico ecause o e ey sog eoeia eeece o e iisic caie esiy o e aga uoe GaAs as ey ew iisic eecos a oes a ece a ig esisiiy i is kow as semi-isuaig (SI is aows a sime meas o isoaig eigouig eices o a iegae cicui a eimiaes e aasiic caaciaces associae wi p-n ucio isoaio meos ou i siico ICs I is suc aasiic eemes a egae eice eomace a ig equecies y makig GaAs eices o SI susaes oeaio a ig equecies ca e aciee I sou e oe a e wie aga aso gies GaAs sueio ig emeaue eomace Gallium arsenide has a high electron mobility. A ow eecic ies e eec- o moiiy i iisic GaAs is m2/s aou si imes geae a a i siico 15 m2/s is is iusae i igue sowig e eeco eociy esus eecic ie (v-E) eaiosi o o GaAs a Si is ig moiiy was e easo o muc o e eay eseac a eeome o GaAs ie Gallium Arsenide and Related Compounds for Device Applications 99 Eec asisos e iig oce was o icease e oeaig equecy o asiso eices Gaium aseie eiis e asee eeco ΤΕ eec is is a eec- ic ie-iuce ase o eecos om oe egio o e eegy a sucue o aoe and esus i a egaie esisace eig osee a micowae e- quecies e aicaios o e eec ae as micowae osciaos a amiies asee Eeco eices (Es e sucue a oeaio o ese eices ae eaie ae ee as ee a gea ea o eseac a eeome o GaAs eices uiiig e aoe eaues esuig i e wiesea commecia aicaio o Es GaAs Es a ICs a Es a ases I ece yeas ee as ee a usuge o iees i sucues a eices mae om comiaios o III- comous a III- aoys eeosucues is ega i e ae seeies wi e emosaio o eace eeco mo- iiy i e GaAs/AGaAs eeosucue sysem [] is ee aso make e ae o moecua eam eiay as a acica gow ecique igig wi i e ossiiiy o makig eaiae eeosucue asisos a oe eices wi useu oeies a caaceisics a imoe eomace oe e saigowa GaAs eices Some eames wic wi e escie i is a- e icue ig Eeco Moiiy asiso (EM; eeoucio ioa asiso (; oue eeoucio ase; a ew eices wose oeaio is ase o quaum-mecaica icies rnfrrd Eltrn v e υ-Ε caaceisics o gaium aseie a siico ae sow i ig 1 Woo Moga wic iusaes e egio o egaie ieeia moiiy (a ece esisace ese i GaAs A ow aie ies e υ-Ε eaiosi is iea o o maeias iicaig a Oms aw is eig oeye Aoe some ciica ie i GaAs i is cea a e Omic eaio o oge os e eeco eociy as as e eecic ie is icease is is ue o e asee eeco eec wic was eice y iey a Wakis [3] i 191 o a semicouco wi a suiae a sucue a y isum [] i 19 wo sowe a GaAs a suc a a sucue as sow i ig 3 e coucio eecos ae iiiay i e owes eegy aey Γ miimum ee ey ae caaceise y a ow eecie mass a ae a ig moiiy We e eecic ie is aie ese eecos ae aiy acceeae y e ie o ig eociies ey gai kieic eegy e eecos ca gai eoug eegy o ase om is aey o e e ige aey e miimum ese ue aeys ae caaceise y a age eecie mass a cosequey o a owe eeco moiiy a a age esiy o aaiae eeco saes e age esiy o saes ecouages ase o ese aeys o eecos wi suiae eegy As e eegeic eecos ase o e ue aeys e aeage eociy o a e eecos as Gallium Arsenide and Related Compounds for Device Applications 11 As e eecic ie iceases a moe eecos gai suicie kieic eegy o ase so e aeage eociy coiues o a ui eociy sauaio is aaie υsa ≈1m/s5 I was e wok o Gu [5] i 193 a oie eeimea eiece o ese eoeica moes ick sames o gaium aseie a iium os- ie wee suece o so ig oage uses a micowae cue oscia- ios wee osee a a equecy iesey ooioa o e same eg A eso oage (ie eec was oe o e ose o e osciaios is esu simuae a gea ea o eseac io e uesaig a aicaio o e asee eeco eec uig e 19s a 7s a e commecia ee- ome o asee eeco eices Es as micowae osciaos A ume o eiews o e asee eeco eec ca e ou i e ieaue [-11] Gaium aseie a iium osie (I ae iuay e ecusie coice o maeia o Es e asic maeia aamees eie o e E eec o ese semicoucos is esee i ae I e asee eeco eice is a wo-emia sucue as sow i ig eaiy + oe coac a susae egios ae use o oie a ow mea-o-semicouco coac esisace a sawic e igy oe (1 1 m 3 acie egio Es commoy oeae i a asi ime moe a is a ig ie egio associae wi a accumuaio o asee eecos is iiiae a e caoe aes aog e eg o e acie egio a e sauaio eociy a is coece a e aoe wee e eecos ae iscage . A ew accumuaio is e ome a e caoe a e ocess eeas ise e acie egio eg is eeoe iesey ooioa o e oeaig equecy o e E e CW ouu owe o GaAs a I asee eeco osciaos as a ucio o equecy is sow i ig 5 GaAs Es ae e uiesa coice o oeaio a equecies eow aou G wi u o 1 W owe aaiae a 1- G ow owe aicaios icue omesic iue aams sma oa maie aa sysems ec I is o acica o Es a ese equecies e ig eso oage a oge ac- ie egio (o as gie equecy wou mea a oo age a oage wou ee o e oe acoss e acie egio causig ecessie owe issiaio a 1 Woo D. V. Morgan Gallium Arsenide and Related Compounds for Device Applications 13 eice aiue I is use o miimee wae E osciaos om -11 G wee ee is a ee o oae a ieesie micowae souces o esoa commuicaios sysems E osciaos ca e oeae i e seco amoic moe y eaciey emiaig e uamea ouu wi a suiae micowae cicui GaAs Es ae oeae i amoic moe o oai useu micowae owe a e- quecies aoe aou 5-7 G 9 mW a 9 G as ee osee Useu owe ouu u o G as ee oaie om I eices oeaig i amoic moe use oeaio is aso ossie wi eak owes o seea ue was aaiae Es ae we suie o siuaios suc as meium age use oe aas wee ow uy cyce oeaio is ecessay Agai I eices ae use a ige equecies a GaAs Es GA ld Efft rntr e GaAs MESE (MEa-Semicouco E is e wokose com- ou semicouco micowae eice oay I was eeoe i e ae 19s a i as ee e suec o iese eseac aciiy i iusy a acaemia wowie sice Eay GaAs Es eiie uiy cue gai cuo equecies fT o a ew G acig ese eices imy i e egime o micowae egiee- ig Moe GaAs Es wi gaeegs as sma as 5 μm ae ee eoe wi a fT o 1 G [1] GaAs Es aso oe a aaage oe Es i aig ee emias eeoe auay eiig iu a ouu os a so makig amiies muc easie o eaise e GaAs MESE sucue is sow scemaicay i ig As ca e see is is o sime a i icie aa eig ise o ac ocessig a iegaio e esseia eaue o e eice is e -ye aye wic oms e cae ewee e Omic coacs a e souce a ai e coucace o e cae is mouae y e eese ias oage o e Scoky aie gae coac igue a sows a MESA ye sucue e -ye aye is ouce y eiaia gow o ig quaiy GaAs oo e SI susae is aicaio ec- ique is geeay use we e iges quaiy eice maeia is equie e -aye is ece away aou e eiey o e eice o oie eecica isoaio is ceay eaes a o-aa suace o e GaAs wae a is ue- siae om a ocessig oi o iew A aeaie meas o isoaio is o use io omame (y yoge o oyge o eame o ceae amage a ocoucig egios i e eiaia aye ewee eices is meo eais e aa wae suace I ig a seeciey io-imae E sucue is sow I is aicaio ecique e asic eaues o e E ae eaie u e Omic coac egios a e acie cae ae ceae y imaig iecy io e SI susae is ecique was ioeee y ockwe [13] i 197 giig em a wo ea i GaAs E IC ecoogy a a ime I is ge- eay use o igia GaAs E iegae cicuis o commecia aicaios wee cos is imoa a e eese o e eiaia aye cao e usiie 1 Woo Moga e GaAs MESE may auay e comae wi e siico MOSE Weeas i MOS ecoogy e key aaage is a e coucace o e iesio cae is mouae oug e isuaig oie y e gae ias a o cue ows i e gae is is i coas o e mea-semicouco coac i e MESE o suiae oie o ieecic as so a ee ou a ca e use eiay i a eice ocess i GaAs ecoogy owee as a as ig equecy oeaio o e eices is cocee GaAs MESEs isay some sigiica aaages oe siico MOSEs e e cae moiiy o eecos i GaAs MESEs ca e u o e imes a see i siico MOSEs i sog iesio is is ue o e ig eeco eociies i e cae egio ossiy as a esu o eociy oesoo eecs a esus i muc euce asi imes i GaAs Es s e ig eeco moiiy a ow eecic ies i GaAs aso igs aou a imoeme i a sue way Moeme o e eecos om e souce coac egio o e eace o e acie cae cosiues a aa- siic esisace e access esisace e ig eeco moiiy i GaAs euces is seies esisace a imoes gai a oise eomace a ig equecies Ways y wic ee e sma access esisace ca e euce ae ee iesigae se-aigme eciques wee e gae meaisaio a e eaiy-oe souce a ai egios ae