Allia3 DflTDbS NAFL INST OF STANDARDS & TECH R.I.C. A1 11 03087069 Rogers, George J/Measurement of translst QC100 .U57 NO.400-5, 1975 C.2 NBS-PUB-C J NBS SPECIAL PUBLICATION 400-5 U.S. DEPARTMENT OF COMMERCE / National Bureau of Standards semiconductor Measurement Technology: Measurement of Transistor Scattering Parameters NATIONAL BUREAU OF STANDARDS The National Bureau of Standards' was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (I) a basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. 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Part of the Center for Building Technology. 14 1975 ^ Semiconductor Measurement Technology: Measurement of Transistor Scattering Parameters George J. Rogers and David E. Sawyer Electronic Technology Division Institute for Applied Technology I .S. National Bureau of Standards Washington, D.C. 20234 6. Ramon L. Jesch Electromagnetics Division Institute for Basic Standards National Bureau of Standards Boulder, Colorado 80302 Jointly sponsored by: The National Bureau of Standards and The Air Force Weapons Laboratory U.S. DEPARTMENT OF COMMERCE, Frederick B. Dent, Secrefary NATIONAL BUREAU OF STANDARDS, Richard W. Roberts, Director Issued January 1975 Library of Congress Catalog Card Number: 74-600204 National Bureau of Standards Special Publication 400-5 Nat. Hiir. Stand. (U.S.), Spec. Publ. 400-5,53 pages (Jan. 1975) CODEN: XNBSAV U.S. GOVERNMENT PRINTING OFFICE WASHINGTON: 1975 For sule by I lie Siiperiiiteiuleiit of Dociiiiients, U.S. Government Printing Office, Washington, D.C. 20402 (Order by SI) Catalog No. C13.10:400-5). Price $1.10 TABLE OF CONTENTS PAGE 1, Introduction 1 2. S-Parameter Measurements 2 2.1 Introduction 2 2.2 Test Plan 3 2.3 Transistors and Biases 5 2.4 Calibration Procedures , 6 2.5 Results of Measurements 10 2.6 Conclusions 13 5. Electrical Characterization of Transistor Probe Assemblies 14 3.1 Background 14 3.2 Measurements and Results 14 3.3 Conclusions j 18 I. Acknowledgements 18 kppendix 1 Plan for an interlaboratory comparison of transistor scattering- I parameter measurements 19 ^ppendix 2 Statistical summary of representative S-parameter measurements .... 23 keferences 48 1 LIST OF ILLUSTRATIONS I I PAGE !. R-C networks 3 The test plan at a glance 5 Basic S-parameter measurement circuit 6 Coaxial through line and attenuators 9 ij I . Special probe assembly 14 L Schematic diagram of probe assembly 15 ' L Circuits used for determination of admittances of the probe assemblies ... 15 I. S parameters of probe assemblies referred to port A 17 iii LIST OF TABLES 1. Equipment used by participants 2. Comparison of calibration procedures 3. Effect of calibration method on s^^^ measurements 4. Effect of calibration method on S22 measurements 5. Variability of R-C network S-parameter measurements 6. Between-laboratory variability of typical transistor S-parameter measurements Al. Summary of = 11 A2. Summary of phase measurements = 11 A3. Summary of = 21 A4. Summary of phase measurements = 21 - AS. Summary of magnitude measurements by five labs on R-C network 4 common fixture . = 11 A6. Summary of = 11 A7. Summary of = 21 A8. Summary of = 21 A9. Summary of magnitude measurements by five labs on R-C network 4 - participant's fixture = 11 AlO. Summary of = 11 All. Summary of = 21 A12. Summary of =21 - A13. Summary of magnitude measurements by three labs on R-C network 4 common fixture . = 11 A14. Summary of = 11 A15. Summary of = 21 A16. Summary of = 21 A17. Summary of magnitude measurements by three labs on R-C network 4 - participant's fixture = 11 A18. Summary of = 11 A19. Summary of = 21 A20. Summary of = 21 A21. Summary of S-parameters of transistor 2N3960(f) measured by five laboratories in participant's transistor fixture. = 5V, 1^ = 2.5 mA A22 . Summary of S-parameters of transistor 2N3960(f) measured by three laboratories in participant's transistor fixture. V^g = 5V, 1^ = 2.5 mA A23. Summary of S-parameters of transistor 2N709(g) measured in participant's transistor fixture. V„_ = 5V, I„ = 2.5 mA CE E a. Data from five laboratories b. Data from three laboratories A24. Summary of S-parameters of transistor 2N918(a) measured in participant's transistor fixture. V^^ = 5V, 1^ = 2.5 mA a. Data from five laboratories b. Data from three laboratories iv . Measurement of Transistor Scattering Parameters George J. Rogers David E, Sawyer Ramon L. Jesch Abstract: Results o£ an interlaboratory comparison of transistor scattering-parameter measurements are reported for transistor types 2N709, 2N918 and 2N3960. From these results it is estimated that, for such devices, between - laboratory variability of transistor S- parameter measurements in the frequency range between 200 and 2000 MHz could be held to a maximum relative sample standard deviation of 7.5 percent in the measurement of magnitude and a maximum sample standard deviation of 8 degrees in the measurement of s^^ phase and 3.5 degrees in the measurement of phase of other S-parameters This could be done if all participants were required to use the same calibration procedure and to limit their test signal to a level that would assure small-signal operation. In a separate study, the equivalent circuit of high-frequency probes used in characterizing the parameters of integrated circuits was evaluated by measuring S parameters at the