<p> EE 551 Linear Integrated Circuits Project 2 Large-Signal MOSFET Characterizations 60 Points</p><p>Objective To understand the large-signal operation of MOSFET transistors in both the subthreshold and above- threshold regimes, including both saturated and ohmic operation. </p><p>Data The data on the class website are from voltage-current measurements from real integrated-circuit transistors (both an nFET and a pFET). The supply voltage is Vdd=3.3V. All data are contained in one .mat file. When you load the data, four matrices will be loaded into the workspace named nfet_gatesweep, nfet_drainsweeps, pfet_gatesweep, and pfet_drainsweeps. For the gate sweeps, the first column contains the values of the gate voltage, and the second column contains the values of the current. For the drain sweeps, the first column contains the values of the drain voltage, and the other columns contain the values for the current, each for a different gate voltage. </p><p>Part 1 – nFET Characterization (40 Points)</p><p>Gate Sweep (15 Points) The gate of an n-channel MOSFET was swept from ground to V dd while the source was connected to ground and the drain was connected to Vdd through a picoammeter. Assume that the data were taken under room-temperature conditions (T=300K). </p><p>Determine the following values from the measured data  kappa  K</p><p> I0  Threshold voltage  Threshold current To find these values, you will need to plot the data under several different conditions. Include each of these plots in your report along with your curve fits and clear depictions of the exponential and square-law regions of operation. Explain how you determined each value. </p><p>Drain Sweeps (25 Points) Data for six different drain sweeps are provided. During this experiment, the source was grounded, the gate voltage was biased at a fixed voltage, and the drain was swept from ground to V dd. This experiment was repeated five more times, each with a different voltage on the gate. </p><p>Determine the following.  Which data sweeps are for subthreshold biases? Explain how you know. Plot all of the the subthreshold sweeps on the same plot.  Which data sweeps are for above-threshold biases? Explain how you know. Plot all of the above-threshold sweeps on the same plot.  What is the saturation current for each of the six cases?  Determine what the gate voltage is for each of these data sweeps.  Determine the Early voltage for each case (and include your curve fits). Do the subthreshold values agree with each other? Do the above-threshold values agree with each other? How well do all six values agree? Explain why they agree or why they do not agree.  Determine where each drain sweep transitions from the ohmic/triode region to the saturation region. Clearly display these transitions on the plots. How well do these dividing lines agree with theory (hint – what is the theoretical transition point based upon your answers to the previous questions)?  Choose one subthreshold drain sweep and one above-threshold drain sweep to be analyzed in the ohmic region. For both cases, look to the in the deep ohmic regime, and extract the value of resistance that the transistor provides. As a second method to determine this resistance value, use the various parameters you have extracted from the previous gate and drain sweeps to determine what the resistance values should be (i.e., plug your previously extracted values into the appropriate model equations to determine the resistance). Do the resistance values obtained from both methods agree with each other? How well do they agree/disagree? </p><p>Part 2 – pFET Characterization (15 Points) Data sets for pFETs include both a gate sweep and six drain sweeps. You do not need to do anything with the drain sweeps, but they are included in case you are interested and would like to look further into device characterizations. </p><p>Gate Sweep (15 Points) The gate of a p-channel MOSFET was swept from ground to V dd while the source was connected to Vdd and the drain was connected to ground through a picoammeter. </p><p>Repeat the steps from the nFET gate sweep for the pFET data that have been provided. </p><p>Drain Sweeps (0 Points) There is no need to do anything here, but the data are included in case you are interested. </p><p>Part 3 – Thought Question (5 Points) 1. How do the various extracted parameters from the nFET compare with the extracted values from the pFET (specifically – kappa, K, I0, threshold voltage, and threshold current)? Where do they agree, and where do they disagree? WHY do they disagree (use what you have learned about device physics to determine the root causes for similarities and differences)? Be thorough when answering why. (5 Points)</p><p>Quality of Report (5 Points) Please make sure that all numbers are readable, that the figures are large enough, and that there are no gross errors in terms of grammar, spelling or punctuation. </p><p>What to Turn In You must turn in both a paper copy of your report, as well as an electronic copy of your report. </p><p>Helpful Hints  Hold on to these data and your analyses. They may prove very useful in subsequent projects.  Tables are often very useful ways to help illustrate “comparison” questions. Of course, if you are asked to compare two items, a verbal description of how the two items are both similar and different is critical.  Percent error and/or percent difference is often helpful when asked how much something agrees/disagrees. </p>