<p> 2003-A82 2003C-C3C 2003S-C3S 2004-D53 2004C-DB7 2004S-DB6</p><p>SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE</p><p>SOT-23 CASE</p><p>SUBCONTRACTOR BUILD DRAWING ASSEMBLY DETAILS 1) Die Process Epitaxial Planar 2) Die Passivation: Silicon Nitride 3) Die Size: 17.5 x 17.5 mils 4) Die Thickness: 8.0 mils 5) Die Metalization: Topside (Anode) – Al (15,000Å); Backside (Cathode) – AuAs (13,000Å) 6) Die Attach: Eutectic 7) Leadframe Material: Ag plated Alloy 42, Manufacturer: Possehl Besi Electronics 8) Package Material: Epoxy KTMC3000, Manufacturer: Kumgang Chemical Co. 9) External Finish: The completed devices shall be 100% dull Tin plated (Pb free) to a thickness of 0.0002 inch (200 micro-inches) minimum. 10) Marking: Devices to be marked in accordance with Table 1. 11) Tape and Reel: Devices shall be taped in accordance with Central Drawing # CPS165. TABLE 1. MARKING CODES DEVICE CONFIGURATION MARKING CODE 2003-A82 SINGLE A82 2003C-C3C DUAL, COMMON CATHODE C3C 2003S-C3S DUAL, IN SERIES C3S 2004-D53 SINGLE D53 2004C-DB7 DUAL, COMMON CATHODE DB7 2004S-DB6 DUAL, IN SERIES DB6</p><p>MAXIMUM RATINGS (TA=25°C) 2003-A82 2004-D53 2003C-C3C 2004C-DB7 SYMBOL 2003S-C3S 2004S-DB6 UNITS Continuous Reverse Voltage VR 200 240 V Peak Repetitive Reverse Voltage VRRM 250 300 V Peak Repetitive Reverse Current IO 200 200 mA Continuous Forward Current IF 250 225 mA Peak Repetitive Forward Current IFRM 625 625 mA Forward Surge Current, tp=1 µs IFSM 4000 4000 mA Forward Surge Current, tp=1 s IFSM 1000 1000 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C</p><p>(Continued) R1 2003-A82 2003C-C3C 2003S-C3S 2004-D53 2004C-DB7 2004S-DB6</p><p>SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE</p><p>SOT-23 CASE</p><p>Thermal Resistance JA 357 °C/W</p><p>(Continued) R1 2003 / 2004 SERIES SMD HIGH VOLTAGE SWITCHING DIODE Page 3 of 4</p><p>ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) 2003-A82 2004-D53 2003C-C3C 2004C-DB7 2003S-C3S 2004S-DB6 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNIT BVR IR=100µA 250 300 V IR VR=200V 100 - nA IR VR=200V, TA=150°C 100 - µA IR VR=240V - 100 nA IR VR=240V, TA=150°C - 100 µA VF IF=100mA 1.0 1.0 V VF IF=200mA 1.25 - V CT VR=0, f=1 MHz 5.0 5.0 pF trr IF=IR=30mA, Rec. TO 3.0mA, RL=100Ω 50 50 ns</p><p>SOT-23 CASE - MECHANICAL OUTLINE</p><p>E</p><p>F DIMENSIONS A INCHES MILLIMETERS G SYMBOL MIN MAX MIN MAX 2 1 A 0.003 0.007 0.08 0.18 B 0.006 - 0.15 - C - 0.005 - 0.13 B D 0.035 0.043 0.89 1.09 E 0.110 0.120 2.80 3.05 C F 0.075 1.90 H I G 0.037 0.95 H 0.047 0.055 1.19 1.40 I 0.083 0.098 2.10 2.49 J 0.014 0.020 0.35 0.50 SOT-23 (REV: R3) 3</p><p>D J R3</p><p>2 1 2 1 2 1</p><p>D1 D2 D1 D2</p><p>3 3 3</p><p>1) Anode 1) Anode D2 1) Anode D2 2) No Connection 2) Anode D1 2) Cathode D1 2003 / 2004 SERIES SMD HIGH VOLTAGE SWITCHING DIODE Page 4 of 4 3) Cathode 3) Cathode D1, D2 3) Anode D1, Cathode D2</p><p>2003-A82 2003C- C3C 2003S-C3S 2004-D53 2004C- DB7 2004S-DB6</p>