<p> Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and The document document went The yellow ballot in July 2009. into During SEMICON draft The basedison formerdraft C.a document 3335 supporting provide to and aware of contents applicationtobe is provided. the patent the are on information available publicly only case, they latter the has In patent for. applied a which been which has or for issued technology as of defined is technology” “patented items context, this In copyrighted documentation. or technology patented Note document.of this creation the preceded that activity the of rationale the on based decision informed an reaching in recipient Note MANUFACTURINGVOLUME HIGH IN GENERATIONS UNPATTERNEDFOR 130THE WAFERS OF SILICON DETERMINING STANDARD: GUIDE FOR NEW NANOTOPOGRAPHY Draft Document SEMI 3335D BackgroundStatement: reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other All activity. development) (document committee Standards International SEMI of scope the within reproduction without distribution and/or SEMIwritten the ofprior isprohibited.consent only part, in or whole in document, this distribute and/or reproduce to granted is Permission standard. adopted or official an as construed be to is page this on material No program. Standards International SEMI the of document draft a is This The be 2010. ballot will reviewed SEMICONand duringinJuly2010. adjudicated West meeting in with conjunction the North spring AmericanJose weekthemeeting in San of March 29 resultspreliminary this The ballot of document rejected was The Europe SEMICONinOctober2009.during A draft newpresented was Working Grouptocarry Working work Members out this were: applicability to design rules todesignnm, downto 22 and applicability therevised issue 1 draft of for ballot in Cycle 2010. SEMICONduring : : the assist to solely provided is It item. balloted the of part not is statement background This : Recipients of this document are invited to submit, with their comments, notification of any relevant any of notification comments, their with submit, to invited are document this of Recipients · · · · · J. - J. ValleyRaytex Siltronic F. Passek - - F. Riedel Siltronic J. Sinha - KLA M. Yoshise - KLA ® AWGTF theJapan 2009 discussed theStandard how to restart for NT.development</p><p>Japan was It Japan 2009. tochangea agreedtest the methodguide, its extend will be be will reviewed Page by the 1 AWG forceInternationaltask </p><p>Document Number:3335B Document nm TO 22 TO Doc. 3335B Doc. 3335B</p><p>Date: during its during nm DRAFT 5/19/2018 th ,  SEMI  LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and that have dominant spatial wavelengths less than 20 mm and vary in peak-to-valley (P-V) height from a few a from height (P-V) peak-to-valley in vary and mm 20 than nanometers. severalhundred to nanometers less wavelengths spatial dominant have that surface wafer the on waves or bumps dips, include examples Typical nm. 22 to nm 130 from generations device for all Not 2.1 nodes. technology advanced for 2 wafers to applied practices standard industry addresses reported compliesnanotopography by M43 with requirements this SEMI the of guide. also and guidance such gives guide present The filtering. as such topics important on specific guidance offer not does but wafers silicon on features 1: NOTE optionsformats appropriate. reporting may rangeof and be wider data a where development process for intended not is and wafers silicon of exchange the in use for intended is guide This reported. data the define to specified are calculation the in used options key The data. Nanotopography generating 1.2 nanotopography. toof ormeasurements applicable front- back-surface guidesteps. This mayeither be process selected for suitability wafer impact also may nanotopography Back-surface range. wavelength spatial their with yield. by height similar thickness of tofeatures other and from discriminated are and area, film an cost within variation prior height their by characterized process post-CMP surface performance, of circuit wafer variations for a consequences in negative on result potential Nanotopography can processes (CMP) 2003. International planarization since the chemical-mechanical in (ITRS) included Semiconductors are parameters for Nanotopography Roadmap Technology steps. process selected for acceptable are wafers 1.1 1 MANUFACTURINGVOLUME HIGH IN GENERATIONS 130THE WAFERS UNPATTERNEDSILICON FOR DETERMINING STANDARD: GUIDE FOR of NEW NANOTOPOGRAPHY Draft Document SEMI 3335D reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other All activity. development) (document committee Standards International SEMI of scope the within reproduction without distribution and/or SEMIwritten the ofprior isprohibited.consent only part, in or whole in document, this distribute and/or reproduce to granted is Permission standard. adopted or official an as construed be to is page this on material No program. Standards International SEMI the of document draft a is This Technologies,” Future 1 local the of measurement through indirectly it determine others while directly, height measurement surface Some the measure systems bandwidths. spatial different over operate and methodologies measurement different employ 3.1.2 is the rejected thein power bands high. regions filtering may in produceartifacts where of rejection out-of-band finite the Also, accurately. measured being not operation of bandwidth the outside variations 3.1.1 include: oflimitations and thesystem.These measurement bylimitations influenced parameters is nanotopography reported The nanotopography. the determine to applied algorithms processing signal the describe fully to intended 3.1 the determine 3 and practices health safety appropriate establish to standard this or priorapplicability regulatorylimitations use. to of users the of responsibility NOTICE: 2.4 inInformation is Related metric 1. described 2.3 2.2 </p><p>Yong Xia et Xia Yong al.,</p><p>Limitations Scope Purpose</p><p>Spatial representations of the defective areas on a wafer surface are outside the scope of this guide. of the areoutside scope this surface ona wafer the defective areas representations of Spatial collectingdata. andnanotopography for analyzing guidethe technique This specifies Use of the peak-to-valley (P-V) metric is specified for nanotopography quantification. An alternative deviation alternative An quantification. nanotopography for specified is metric (P-V) peak-to-valley the of Use This guide covers the determination and reporting of the nanotopog the of reporting and determination the covers guide This This guide provides procedures and a decision tree (Figure1) for selecting the different possible options in options possible different the selecting for (Figure1) tree decision a and procedures provides guide This Front-surface wafer height variations over specified distances need to be properly controlled to assure that assure to controlled properly be to need distances specified over variations height wafer Front-surface Use of this guide is intended to reduce measurement-system-specific effects. However, this guide is not is guide this However, effects. measurement-system-specific reduce to intended is guide this of Use</p><p>Measurement results may differ between systems of different design because different measurement systems measurement different because design different of systems between differ may results Measurement h iiesailbnwdho h esrmn ytmadteapidfleigfiltering applied the and system measurement the of bandwidth spatial finite The SEMI M43, guide for reporting wafer nanotopography provides a framework for reporting nanotopography surface nanotopography reporting for framework a provides nanotopography wafer reporting for guide M43, SEMI This standard does not purport to address safety issues, if any, associated with its use. It is the is It use. its with associated any, if issues, safety address to purport not does standard This (needs complete reference here) complete(needs reference Future FabFuture International , July 1999. In SEMI M43 this statement is referred to statement SEMI M43 In this Page 2 raphy of unpatterned silicon wafer surfaces wafer silicon unpatterned of raphy</p><p>K. V. Ravi, “Wafer Flatness Requirements for Ravi, “Wafer V. K. Flatness</p><p> nm to 22 nm to22 nm 1 Nanotopography features are features Nanotopography Document Number:3335B Document a may Doc. 3335B Doc. 3335B result Date: s in surface in DRAFT 5/19/2018  SEMI  LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and wavelength) effects of wafer shape (such as bow, warp and sori). This filtering along with the wafer shape and shape wafer the with along filtering This sori). and warp bow, as (such shape wafer of effects wavelength) 3.2.4 and the betweenthesupport. wafer trapped supported, causedby is particles orwafer be 3.2.3 features. than the isspacing the feature, between or larger samplelargerheight than is 3.2.2 analysis. 3.2.1.2 3.2.1.1 within measurement height the FQA. may roll-off, causeincorrect edge 3.2.1 include: limitations 3.2 values. height the reported in artifacts or contributions related non-wafer in result may system the of design the and principle measurement the 3.1.7 high-pass used producethedouble specified Gaussian to filtering.implementation 3.1.6 surface the measured magnitudefeatures asof height limits well as 3.1.5 systems.measurement 3.1.4 improperly.reported reported 3.1.3 the of differences in result may also methods different these of nanotopography. Use curvature. local or slope surface reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other All activity. development) (document committee Standards International SEMI of scope the within reproduction without distribution and/or SEMIwritten the ofprior isprohibited.consent only part, in or whole in document, this distribute and/or reproduce to granted is Permission standard. adopted or official an as construed be to is page this on material No program. Standards International SEMI the of document draft a is This SEMI M1 4.1 4 the reduce to tends this Statistically P-V for partial analysis these areas.reported boundary. FQA the within completely areas analysis than points data fewer 3.6 3.5.2 region 3.5.1 3.5 the wafer. area of the inner to 3.4 rangewavelength 3.3 thedata originalheight those locations. in to thesystem measurement acquire of properly 3.2.5 the reported results. may roll-off affect edge wafer</p><p>ReferencedStandards </p><p>SEMI Standards SEMI region shrinking producedifferent oftheresults. nearedge choice in constantwill or The filter P-V measurements for analysis areas that extend beyond the FQA boundary (partial analysis areas) are based on based are areas) analysis (partial boundary FQA the beyond extend that areas analysis for measurements P-V comparedregion near edge the in treatment data different a requires filter shrinking constant or the either of Use eotd nntpgah lo vre ih itrcin ewe ae n esrmn ytm These system. measurement and wafer between interactions with varies also nanotopography Reported aooorpy caatrzto os nt icue mcoogns, wih apis t hre spatial shorter a to applies which microroughness, include not does characterization Nanotopography</p><p>A constant filter (requiring extrapolation) can resulteitherorreported constantnanotopography. in filter can lower extrapolation) higher (requiring A Closely spaced features may be counted as a single feature, or as no feature, if the spatial extent of the surface the of extent spatial the if feature, no as or feature, single a as counted be may features spaced Closely At some spatial locations anomalous or extreme surface height variations of the wafer may exceed the ability the exceed may wafer the of variations height surface extreme or anomalous locations spatial some At Both the spatial extent of a surface height sample and the spatial sampling interval may affect the bandwidth the affect may interval sampling spatial the and sample height surface a of extent spatial the Both the by employed methodology sampling spatial the on depend also may features some of shape reported The The measurement system itself may may itself system measurement The . Measurements within or near regions of extreme topography, such as the edge region of wafers with strong with wafers of region edge the as such topography, extreme of regions near or within Measurements Reported features may result from the combination of the actual surface features, the manner in which the which in manner the features, surface actual the of combination the from result may features Reported All measurement systems have a noise floor; features with height variations near this noise floor may be may floor noise this near variations height with features floor; noise a have systems measurement All hikn shrinking A ihps sail feuny itrn s ue ih tee maueet o rmv h (long-spatial the remove to measurements these with used is filtering frequency) (spatial High-pass h vrl epne o pta-oan hg as fle il dpn n te sailfle digital spatial–filter the on depend will filter pass high spatial-domain a of response overall The</p><p>These regions tend to accentuate mechanical differences between measurement systems differencesbetweenmeasurement tend to mechanical regions accentuate These These regions tend to accentuate differences in the implementation of the measurement system filtering and filtering system measurement the of implementation the in differences accentuate to tend regions These </p><p>Specifications for SingleSpecifications Polished CrystalSilicon Wafers eghlength itrfilter (without extrapolation) results in lower reported nanotopography in the affected the in nanotopography reported lower in results extrapolation) (without have have impact impact Page on on the reported height data, i.e. data, height reported the 3 . Document Number:3335B Document , wafer handling or holding, or handling wafer Doc. 3335B Doc. 3335B Date: DRAFT 5/19/2018  SEMI  LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and wafer. However,wafer. use derived prudent of data a aspectis required of guide.the this on features physical to correspond to assumed be never must data Derived measurement. height perfect of limit the at even 2: NOTE spatial coordinate. 5.2.7 the filtered sample. atheight whichthat affects output sample, 5.2.6 or thedeviationmetric. P-V quantifyexample metric map to nanotopography,for 5.2.5 5.2.4 themap. height in coordinate analysisonthat area centered an 5.2.3 5.2.2 nanotopography 5.2.1 5.2 5.1 5 NOTICE: SiliconSEMI M59—Terminologyfor Technology Generations Technology nm to nm 130 the for Wafers Silicon for Equipment Measurement Geometry Specifying for Guide — M49 SEMI for Nanotopography Wafer SEMI M43—Guide Reporting SEMI M20 reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other All activity. development) (document committee Standards International SEMI of scope the within reproduction without distribution and/or SEMIwritten the ofprior isprohibited.consent only part, in or whole in document, this distribute and/or reproduce to granted is Permission standard. adopted or official an as construed be to is page this on material No program. Standards International SEMI the of document draft a is This reported (seeAppendix of (50% cut-off wavelength 20mm filterresponse) a doubledomain Gaussian with in result to 6.3.1 filter pass high the enables extrapolation 6.3 the reasonable Ideally physically be must data. data measured height which not nanotopography is impacted the by closeness the boundary.to FQA Extrapolated adjacent the system. to measurement the compared by provided is algorithm extrapolation 4: NOTE method, before FQA extrapolation the outside performedfiltering is data map height the appropriate derive to An implemented is customer, and required. supplier the between typically upon agreed is boundary FQA the beyond extrapolation data filtering constant of case the For area. support filter’s spatial-domain the to refer shrinking and Constant treatment. 6.2.1 6.2 3: NOTE the in artifacts both in height mm per support-induced points two minimize is to density directions. sample as map height way minimum The a interest. such of range in wavelength measurement during wafer the Support 6.1 6</p><p>Terminology Procedure</p><p>Other applicable terms are defined as follows: termsas aredefined applicable Other arefound generalsiliconSEMIM59. terms in for Definitions of technology High-pass Filtering height the high-pass wafer of filtered map.Calculation Data Acquisition Data</p><p> height mapheight partial area analysis nanotopography metric analysis map – map analysis surface height sample height surface Implement a spatial-domain high-pass filter such that its overall response approximates that of a frequency- a of that approximates response overall its that such filter high-pass spatial-domain a Implement filter of area support – area analysis Near Edge Treatment — Select between applying a shrinking filter or constant filter for near edge data edge near for filter constant or filter shrinking a applying between Select — Treatment Edge Near ifrn xrplto ehd,e . enk ucin ror functions Zernike g., e. methods, extrapolation Different The densitydata determines high the spatial-frequency the dataof height unless low-pass filter applied.a smoothing is limitations, to subject are heights surface derived All heights. surface derived are data filtered and extrapolated Both Unless otherwise indicated, all documents cited shall be theversions. latest published otherwise documents all cited be shall Unless indicated,  Practice for Establishing a Wafer Coordinate System Wafer Establishing for Practice a</p><p>— a representation of surface height as a function of position on a wafer surface ( position a surface surfaceona function representationof wafer as of height a</p><p>. a map where the value at any coordinate represents the metric-determined nanotopography for nanotopography metric-determined the represents coordinate any at value the where map a — Measure the height map of the wafer front surface or back surface within the FQA. the within surface back or surface front wafer the of map height the Measure — an area on the height map of a wafer inside of which height variations are used to calculate to used are variations height which of inside wafer a of map height the on area an – an analysis area whose area is partly outside FQA while its center is still areacenter partlyis FQA is outside while whose its –an FQA. analysisinside area — for a spatial-domain filter, the area of the height map, centered on a surface height surface a on centered map, height the of area the filter, spatial-domain a for — — — — the parametric technique applied to data within each analysis area of filtered height filtered of analysis area each withindata to applied technique the parametric — the measured or derived out-of-plane height value of the wafer surface at a known a at surface wafer the of value height out-of-plane derived or measured the Page 4 hbse Chebishev hbse Chebyshev Document Number:3335B Document polynomials, are feasible. The feasible. are polynomials, Doc. 3335B Doc. 3335B</p><p>1). 1). z ( Date: x , y )). DRAFT x 5/19/2018 - and and -  65 65 SEMI 22 y -  LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and 6.4.1.1 A area. analysis each within directions axial analysiscircular area in than results nearly analysis,limited by isotropic only sample density. longer times ~1.4 are which directions, diagonal its along nanotopography 7: NOTE the using calculated are 6.4.1 areas analysis two these for values nanotopography procedure:following level Wafer areas. analysis two 6.4 the to prior occur must It process. analysis nanotopography the analysisnanotopography process. with confused be to not is process filtering This mean. zero process filtering This 6: NOTE 6.3.1.3 . for within data points height all the FQA. contains area support filter’s constant the that so enough far outward boundary data measured the from extends area height measured The region. beyond extrapolation This theuseddata FQA inside FQAgenerateheight boundary. is edge to data physically reasonable near the in data NT the producing while constant wavelength cut-off filter the keep to order in generated be must FQA the outside data Height FQA. complete the within constant remains filter 6.3.1.2 of the FQA boundary. band near radial effect the has way this in filter the Shrinking high of amplitude the map. reducing gradually height filtered the determine to FQA the within from data the shrinking requiresusing only of the edge the FQA height Therefore filter supportreaches area just thethat filter 6.3.1.1 strong non-isotropicavoids this response. maps. height filtered the in response non-isotropic strong exhibit data. Monitor) Quality (Surface SQM generate to method 5: NOTE reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other All activity. development) (document committee Standards International SEMI of scope the within reproduction without distribution and/or SEMIwritten the ofprior isprohibited.consent only part, in or whole in document, this distribute and/or reproduce to granted is Permission standard. adopted or official an as construed be to is page this on material No program. Standards International SEMI the of document draft a is This a reporting value scales the nanotopographythat with worst across entire the FQA. clearly while P-V maximum the than stable more far is statistic This value. P-V maximum the below 50 ranked is which value 10: NOTE 9: NOTE as values P-V threshold these Record customer. threshold2-mm analysis xfor 10-mm areas, respectively. atnanotopography the and its and supplier wafer between agreed 6.4.4 P-V, nanometers. in CDF( where P-Vnanotopography values: 6.4.3 mm areas,10 analysis Typicallyrespectively. these are values stored as either a array as linear or a map.two-dimensional 8: NOTE height filtered only However, areas). the FQAP-V iscalculation withininmetric. of data the used the whose analysis partial areas (includes analysis boundary all FQA from the on data or includes within Analysis wholly lie centers sample. height that on centered areas analysis mm 10 and 6.4.2 6.4.1.2 </p><p>Nanotopography Analysis Process Process Analysis Nanotopography</p><p>Select circular (Figure 2) or square (Figure 3) analysis areas for peak-to-valley (P-V) data for(P-V) 3)analysis circular or (Figureanalysispeak-to-valley square (Figure areas 2) Select For all all For For each threshold curve, determine the P-V value value P-V the determine curve, threshold each For ttsia nlsso h - ercdt rdcstetrsodcre curve, threshold the produces data metric P-V the of analysis Statistical</p><p>Use analysis areas of 2 analysis areas Use analysis 10mmarea. 2mm of caseof diameters in and circular analysis areas Use only spatialfilteringdefined themap resultingheight is the FQA. After high-pass within In the case when the shrinking filter is selected for the near edge region the spatial domain filter is scaled so scaled is filter domain spatial the region edge near the for selected is filter shrinking the when case the In In the case when the constant filter is selected for the near edge region, the implemented spatial-domain implemented the region, edge near the for selected is filter constant the when case the In As valueis default x=0.05 recommended this because value widely in is used industry. For a accentuate to tends area analysis square A result. the on impact significant have may area analysis the of shape The effects topography and shape wafer frequency) spatial (low wavelength spatial long removes filtering High-pass filter and acquisition data proprietary a used measurement nanotopography for practice industry Previous For a a For t ) is the cumulative distribution function (%) as a function of the value of the nanotopography metric metric nanotopography of the the value of function a (%) as distribution function cumulative the is ) filtered filtered filtered nanotopography map nanotopography effectively height map N samplesheight with height within FQA are P-V the there N values for the mm reported both 2 and surface height samples within the FQA, calculate and store the P-V value for both the 2 mm 2 the both for value P-V the store and calculate FQA, the within samples height surface generates  2 mm² and 10 2mm² and filtered height map height filtered removes — Analysis of the the of Analysis — spacial a slowly varying global reference surface and reference global surface varying slowly a T  spatial ( 10 mm² size in caseof 10mm²in squareanalysis area. size t ) = 1 ) with N = 100,000 height samples the 0.05% threshold reports the P-V the reports threshold 0.05% the samples height 100,000 = N with Page </p><p> frequency nanotopography frequency CDF(</p><p> t Both SQM and later emulation of SQM, e.g., SQMM, e.g., SQM, of emulation later and SQM Both , in nanometers, in , nanotopography nanotopography 5 t )</p><p>The double Gaussian filter required in this guide this in required filter Gaussian double The at which which at filtered height height filtered frequency nanotopography frequency T , for each of the two sets of sets two the of each for , T Document Number:3335B Document ( present t ) = x . Where x is a value a is x Where . x = ) map is performed using performed is map t 1 n and ing Doc. 3335B Doc. 3335B s filtered height withheight filtered t Date: 2 , as the wafer the as , . DRAFT 5/19/2018 in the in  SEMI (1) t = , .  LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and 6.5.6 6.5.5 6.5.4 6.5.3 6.5.2 6.5.1 6.5 reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other All activity. development) (document committee Standards International SEMI of scope the within reproduction without distribution and/or SEMIwritten the ofprior isprohibited.consent only part, in or whole in document, this distribute and/or reproduce to granted is Permission standard. adopted or official an as construed be to is page this on material No program. Standards International SEMI the of document draft a is This Figure 2 Figure</p><p>Analysis ReportAnalysis</p><p>The P-V values,The circular of or chosen theeither nanotopography, square, ofthe P-V shape thefor analysis area The or eithershrinking, type chosen ofregion, constant passthe high nearedge The filter for of coordinates perimeters,if exclusionany,SEMI M20based zone of the the FQAreportedmetrics, usednanotopography the determination in of Diameter sample height density,Surface Decision tree for selecting different keyoptionsDecision treeselecting Nanotopography in for generating data. NT — Report the following elements for eachset of following for calculations: —Report the elements - CC t C: Circle 1 and and t 2 , at the 0.05% threshold foranalysis andat areas, the 0.05%the10mm 2mm respectively. both threshold Analysis C: ConstantC: Q: Square Q: NT - CQ FQA Type Filter Page NT - 6 SC C: Circle S: ShrinkingS: Analysis Q: Square Q: NT Document Number:3335B Document - SQ Doc. 3335B Doc. 3335B Date: DRAFT 5/19/2018  SEMI  LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and 0ff8334f5b531936a506490e48f9bf81.doc Circular Analysis ofCircular Area Diameter D D i i D i , Displayingand Included Data Center at the Samples which Surface Height is takeninto is Height Account. Figure 3 Figure Figure 4 Figure 5 Center sample,Center included Sampling grid center lines center grid Sampling Center sample,Center included Sampling grid center lines center grid Sampling Included dataIncluded samples Included dataIncluded samples Document Number:3335B Document © © SEMI Date: ® DRAFT 2008 5/19/2018</p><p>LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and A1.1.2 A1.1.2 G where where as defined subtractingItfollows: is the data arrayitoriginalheight and array. filtering thedata from height low-pass A1.1.1.1 0.5at value of a transmission its by defined is filter The data. the A1.1.1 A1.1 on[date]. procedures NOTICE: CONSIDERATIONSFILTER 1 APPENDIX 0ff8334f5b531936a506490e48f9bf81.doc Where by the replacing wavelength processing A1.3.1 A1.3 the have thedata height filterwith center array. kernel weights.filteraofhighest This is process convolution the the at pixels The area. support filter the within values pixel array data height of average weighted A1.2.1 A1.2 wavelength normalized increasing A1.1.3 Square of Area Size Analysis Extension Extension to TwoDimensions FilterLow-pass Implementation Double GaussianHigh-pass Filter Definition G λ The one-dimensional Gaussian filter defined above can be extended to two-dimensions for the image the for two-dimensions to extended be can above defined filter Gaussian one-dimensional The a as domain spatial the in implemented is filter low-pass the array, data (pixel) sampled a to applied When thepassthattransmission Doublehigh Figure A1-1filter Gaussian response.Note with decreases shows the (A1-3),Combining Eqs.(A1-1), (A1-2), and in components frequency low-spatial reduce to array data height acquired the to applied is filter high-pass A x LP DLP and and A Double Gaussian high-pass filter is used for nanotopography. The filter is typically implemented by implemented typically is filter The nanotopography. for used is filter high-pass Gaussian Double A is the Gaussian low pass filter response, given by: lowpass the Gaussian filter is response,given is the Doublelowpass is Gaussian filter response,given the by: The material in this appendix is an official part of SEMI Mxx and was approved by full letter ballot letter full by approved was and Mxx SEMI of part official an is appendix this in material The λ y are the wavelengths in wavelengths the arethe  c , the cutoff wavelength. ,the cutoff G G DHP DLP D i , Displayingand Included Data Center atthe Heightis Samples which Surface (    1 ,  c  (decreasing frequency) (decreasing G c λ 2 ) LP using the following using the formula exp  x ( G and      LP ,  G  taken into Account. 1 ( c y DHP  .  ) 228 directions, respectively. G ,   1 (  . exp 331     Figure 5 Figure      1 c 2 x c      ), a function of spatial wavelength wavelength spatial of function a ),   6     c 2     G )        2  y  DLP ( c 2 . exp      2 G      ln  LP 2 2 ( .      456 , 1 .    331   c     c 2 )     Document Number:3335B Document  . . G is defined to have to defined is © © SEMI Date: ® DRAFT 2008 5/19/2018 (A1-5) ( ( ( ( A1- A1- A1- A1- 4) 3) 2) 1)</p><p>LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and 0ff8334f5b531936a506490e48f9bf81.doc</p><p>Transmission, G</p><p>Transmission G 1 . 0 2 . 0 3 . 0 4 . 0 5 . 0 6 . 0 7 . 0 8 . 0 9 . 0 0 1 0 1 1 - Normalized Spatial Wavelength Spatial Normalized Wavelength Response Function aDouble of Gaussian High-pass Filter. ) g n i s a e r c e d y c n e u q e r f ( h t g n e l e v a W l a i t a p S d e z i l a m r o N s s a P h g i H n a i s s u a G e l b u o D Figure A1.1 Figure 7 0 1 0  c</p><p>(frequencydecreasing) Document Number:3335B Document © © SEMI Date: 0 1 1 ® DRAFT 2008 5/19/2018</p><p>LETTER (YELLOW) BALLOT Informational (Blue) Ballot1000A (Blue) Informational Phone:408.943.6900 Fax: 408.943.7943Phone:408.943.6900 Fax: CASan 95134-2127Jose, 3081 Zanker Road Equipment Semiconductor InternationalMaterials and because only data of the filtered height map within the filtered dataused. FQA only is of map height because is the NT in calculation takenaccount reduced analysisofinto areasvalues height the number R1-2.3 Forpartial this assign and area this of deviation of the analysis theof coordinate area. to the center value height maximum the calculate FQA, the within and center map, its height with filtered least the on at point lying individual each at centered areas, analysis mm 20 and mm 4 all For R1-2.2 corresponding tometric: is a data ondeviationmetricwafer P-V to based of NT procedure generate R1-2.1 The GeneratingData Deviation R1-2 the Nanotopography Basedon Metric used. will 10mm 2 mm doubled, analysisbe i.e.,and insteadaarea and of 20mm be 4mm to has area analysis the of size the analysis, metric P-V to comparable scale length a on deviations probe To R1-1.3 the of area analysis an within points all of deviation point theof analysis height of to area. the mapcenter this height relative filtered height largest the determines metric deviation The R1-1.2 the reported with P-V analysisvalue. area theassigned coordinate rangeofto the the size peakvalley toexact positionswithin related the deviationwhileP-Vareonly in and metric this position the related with deviationvalue the identicalwafer with assigned is coordinate a helpful. metricsurface The maythis wafer be usedvolumeHowever, deviationmetrichigh someapplications not specific in is for R1-1.1 The manufacturing. Introduction R1-1 ballot on[date]. letter procedures NOTICE: METRIC DEVIATION RelatedInformation1 0ff8334f5b531936a506490e48f9bf81.doc o n atclr apiain h eemnto f te siaiiy o h tnad i oey the solely is standard the labels, product of instructions, manufacturer’s suitability to refer the to cautioned of are determination Users The user. the of responsibility application. particular any for NOTICE: responsibility. patent or their rights of theown copyrights,risk ofsuchsuch infringement rights,areentirely and expressly this determination standardthat mentionedin of Users item this any standard. advised are rightswith of copyrights nopositionconnection any asserted the in respecting validity any patent or takes publication bypatent orinventionthis rights.By of SEMI material an covered of standard, copyrighted isuse the attention possibility user’s to of this with called mayThe compliance standard require that notice. aresubjectchangewithout to standards These herein. mentioned equipment or materials any respecting literature relevant other and sheets, data product The material in this related information is not an official part of SEMI Mxx and was approved by full by approved was and Mxx SEMI of part official an not is information related this in material The SEMI makes no warranties or representations as to the suitability of the standard set forth herein forth set standard of the the suitability as to representations or warranties no makes SEMI 8 Document Number:3335B Document © © SEMI Date: ® DRAFT 2008 5/19/2018</p><p>LETTER (YELLOW) BALLOT</p>