Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1989 Auger effect on the output power of InGaAsP DH lasers Mani Mina Iowa State University Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Electrical and Electronics Commons, Electromagnetics and Photonics Commons, and the Physics Commons Recommended Citation Mina, Mani, "Auger effect on the output power of InGaAsP DH lasers " (1989). Retrospective Theses and Dissertations. 9159. https://lib.dr.iastate.edu/rtd/9159 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. 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University Microfilms International A Bell & Howell Information Company 300 North Zeeb Road, Ann Arbor, Ml 48106-1346 USA 313/761-4700 800/521-0600 Order Number 9014934 Auger effect on the output power of InGaAsP DH lasers Mina, Mani, Ph.D. Iowa State University, 1989 UMI 300N.ZeebRd. Ann Aibor, MI 48106 Auger effect on the output power of InGaAsP DH lasers by Mani Mina A Dissertation Submitted to the Graduate Faculty in Partial Fulfillment of the Requirements for the Degree of DOCTOR OF PHILOSOPHY Department: Electrical Engineering and Computer Engineering Major: Electrical Engineering (Electromagnetics) Approved: Members of the Committee: Signature was redacted for privacy. In Charjga of Major Work Signature was redacted for privacy. Signature was redacted for privacy. For Majer department Signature was redacted for privacy. For the Graduate College Iowa State University Ames, Iowa 1989 11 TABLE OF CONTENTS ACKNOWLEDGEMENTS xv 1. INTRODUCTION 1 1.1 Semiconductor Injection Laser 7 1.1.1 Laser action 8 1.1.2 Semiconductor materials 10 1.1.3 Laser structure 13 1.2 Laser Operation 16 1.2.1 Population inversion 16 1.2.2 Carrier and optical confinement 18 1.2.3 Threshold parameters 21 1.3 Problem Statement 22 2. LASER PARAMETERS 27 2.1 Threshold Condition 27 2.1.1 Simple model 30 2.2 Carrier and Optical Losses 33 2.2.1 Optical loss 34 2.2.2 Carrier loss 3-5 m 2.3 Generation, Recombination, and Lifetime 38 2.4 Threshold Current 42 2.4.1 Basic current density equation 43 2.4.2 Temperature dependence of 44 2.4.3 Empirical models for current 46 2.5 Quantum Efficiency 47 2.5.1 Internal quantum efficiency 48 2.5.2 Differential quantum efficiency 49 2.6 Laser Power 50 3. AND J]ffj 53 3.1 .4uger Phenomena 54 3.1.1 Auger calculation 55 3.1.2 Experimental results 60 3.2 JfA 61 3.3 T/f/, 63 3-4 67 4. CW OPERATION 71 4.1 Temperature Distribution 73 4.2 The Model 73 4.2.1 Unique solution 75 4.3 Typical laser 77 4.4 Heat Sources 80 4.5 Thermal Conductivity 82 iv 4.6 Calculation method 82 5. RESULTS AND DISCUSSIONS 86 5.1 -Vj Evaluation 87 5.2 A, B, and C Values for Calculation 93 5.3 and Results 94 5.4 and Tq Calculation 99 5.5 Light Output Power 101 5.6 Conclusion 117 6. BIBLIOGRAPHY 122 LIST OF TABLES Table 3.1: Values for various Auger coefficients in crrfi/s [25] . 59 Table 3.2: Measured total Auger coefficient in 10"^^ crrfi I s [8. page 25] 61 Table 3.3: A. B. C values observed experimentally by Mozer et al. [33] 63 Table 5.1: Measured wavelengths and energy gaps related to different val­ ues of X and y in InGaAsP [8, 61] 87 Table 5.2: Calculated values of ni for small variations of x and y at 300 K 88 Table 5.3: Threshold injected carrier density (n^-) for an ideal laser with intrinsic active layer (A = l.Zfim) 89 Table 5.4: Ni values for different n-type doping levels (rq is the number of acceptors in the active region) at different temperatures (A = 1.3 //m) 90 Table 5.5: N-^ values for different p-type doping levels (pQ is the number of acceptors in the active region) at different temperatures (A = 1.3 ^im) 90 Table 5.6: and for an InGaAsP laser with an undoped active layer ( d = 1 jim ) 94 vi Table 5.7: Doping dependence of and in n-doped active layer InGaAsP lasers at 300 K 96 Table 5.8: Doping dependence of nj, and Jj.j^ in p-doped active layer InGaAsP lasers at 300 K 98 Table 5.9: Comparison of calculated and experimental values of (in 10^®c77?~''^)of a laser with undoped active layer (experimental results taken from Haug) [.34] 98 Table 5.10: Experimental results for and TQ at 300 K [24, 30] . 99 Table 5.11: ^nd Tq at 300 K for p-type active layer InGa.A.sP DH lasers 100 Table 5.12: Tj^, and TQ for different temperatures around the room temperature for an undoped active layer (reference T for Tq is 200 K and for is 255 K) 101 Table 5.13: Approximate characteristic values of Laser \(dp = 2 fim. ds = 100 fim) with narrow-stripe (wa = 10 fim, da = 0.2 i.im) and undoped active layer (see Figure 5.6a) 104 Table 5.14: Approximate characteristic values of Laser 2 {dp = 4 iim, ds = 50 i^m ) with narrow-stripe { wa = 10 /zm, da = 0.2 /im ) and undoped active layer (see Figure 5.6b) 106 Table 5.15: Approximate characteristic values of Laser 1 (dp = 2 /(m. ds = 100 fim) with medium-stripe {wq = 150 fim. da = 0.2 //m) and undoped active layer (see Figure 5.8a) 108 vil Table 5.16: Approximate characteristic values of Laser 2 (dp = 4 //m, ds = 50 fim) with medium-stripe (wa = 150 //m, da = 0.2 fim) and undoped active layer (see Figure 5.8b) 110 Table 5.17: Approximate characteristic values of Laser 1 (dp = 2 nm. ds = 100 fim) with broad area (wq = 300 fim, da = 0.2 //m) and undoped active layer (see Figure 5.9a) 110 Table 5.18: Approximate characteristic values of Laser 2 (dp = 4 ftm, ds = 50 /(m) with broad area (wa = 300 fim, da = 0.2 fim) and undoped active layer (see Figure 5.9b) 112 Table 5.19: Approximate characteristic values of Laser 1 (dp — 2 //m. ds = 100 fxm) with medium-stripe (wa = 150 ftm. da = 0.2 //m) and p-doped active layer (see Figure 5.10a) 113 Table 5.20: Approximate characteristic values of Laser 2 (dp = 4 /(m. ds = 50 /rm) with medium-stripe (wa = 150 fim. da = 0.2 i^im) and p-doped active layer (see Figure 5.10b) 113 Table 5.21: Approximate characteristic values of Laser 1 -(dp = 2 ;im, ds = 100 yum) with medium-stripe (lUa = 150 fim. da = 0.2 //m) and lightly n-doped active layer (see Figure 5.11a) 115 Table 5.22: Approximate characteristic values of Laser 2 (dp = 4 fim. ds = 50 i.im) with medium-stripe (wa = 150 //m. da = 0.2 //m) and lightly n-doped active layer (see Figure 5.11b) 115 vin Table 5.23: Approximate characteristic values of Laser I (dp = 2 ^m. dg = 100 fim ) with medium-stripe { wa = 150 da = 0.2 fim ) and n-doped active layer (see Figure 5.12a) 117 Table 5.24: Approximate characteristic values of Laser 2 (dp = 4 //m, ds = 50 /(m) with medium-stripe (lua = 150 fim, da = 0.2 /in?) and n-doped active layer (see Figure 5.12b) . .• 117 ix LIST OF FIGURES Figure 1.1: Loss characteristics of a silica fiber [5, page 704] 3 Figure 1.2: Wavelength range of semiconductor lasers covered by different materials [3, page 6] 4 Figure 1.3: Three basic transitions between two energy levels (a) absorp­ tion (b) spontaneous emission (c) stimulated emission 7. page 7071 9 Figure 1.4: Parabolic band diagram for a two band semiconductor '11, pages 4, 35] 10 Figure 1.5: Band gap and lattice constant for InGaAsP(clear region) and AlGalnP (shaded region) [3, page 7] 12 Figure 1.6: Contours of constant band gap and lattice spacing in x-y com­ positional plane of InGaAsP [3, page 8] 13 Figure 1.7: The basic Fabry-Parot-Cavity configuration [7, page 708] .