2019 IEDM Conference Proceedings Innovative Devices for an Era of Connected Intelligence For More Information Social Networks: IEDM Online: ieee-iedm.org ieee-iedm.org/social-media Table of Contents Intro .....................................................3 Committees ...........................................3 Topics of Interest ....................................6 Program: Tutorials ................................................8 Short Courses ........................................8 Plenary Session ......................................9 Focus Session ........................................9 Career Session ......................................9 Technical Program ..................................9 SRC Student Showcase Poster Session ...11 Panel Discussion ..................................11 Exhibits & Exhibit Events .......................11 MRAM Posters and Forum .....................12 EDS Function .......................................13 Abstracts, Bios for Tutorials, Short Courses & Technical Program ......................Appendix 2020 IEEE International Electron Devices Meeting 2 Intro IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the fl agship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. Digital & Social Media •LinkedIn: https://www.linkedin.com/groups/7475096/ •Twitter: https://twitter.com/ieee_iedm •Facebook: https://www.facebook.com/IEEE.IEDM •YouTube: https://www.youtube.com/channel/UC9X-8YPHtsy3SMQwU0yZdTg •Wikipedia: https://en.wikipedia.org/wiki/International_Electron_Devices_Meeting Committees Executive Committee General Chair Courses Co-Chair (Tutorials) European Arrangements Suman Datta Rihito Kuroda Chair University of Notre Dame Tohoku University Geert Eneman Notre Dame, IN Sendai, Japan imec Technical Program Chair Focus Session and Special Heverlee, Belgium Tibor Grasser Events Chair European Arrangements TU Wien Jongwoo Joh Co-Chair Vienna, Austria Texas Instruments Gaudenzio Meneghesso Technical Program Vice Dallas, TX University of Padova Chair Focus Session and Special Padua, Italy Barbara De Salvo Events Chair Conference Managers Facebook, Inc. Sandy Liao Phyllis Mahoney Menlo Park, CA Intel Widerkehr and Associates Publications Chair Santa Clara, CA Montgomery Village, MD John Paul Strachan Publicity Chair Polly Hocking Hewlett Packard Dina Triyoso Widerkehr and Associates Palo Alto, CA TEL Technology Center, America, LLC Montgomery Village, MD Publications Co-Chair Albany, NY Kirsten Moselund Publicity Co-Chair IBM Zurich Meng-Fan (Marvin) Chang Rüschlikon, Switzerland TSMC Courses Chair Hsinchu, Taiwan Jan Hoentschel Asian Arrangements Chair Globalfoundries Kang-ill Seo Dresden, Germany Samsung Electronics Courses Co-Chair (Short Albany, NY Courses) Asian Arrangements Srabanti Chowdhury Co-Chair Stanford University Kuan-Lun (Alan) Cheng Stanford, CA TSMC Hsinchu, Taiwan 2020 IEEE International Electron Devices Meeting 3 Advanced Logic Technology Jean Anne Incorvia Sabina Spiga Committee UT Austin CNR-IMM–Unit of Agrate Brianza Sylvain Maitrejean, Chair Helen Li Jau-Yi Wu CEA-LETI Duke University TSMC Fadoua Chafi k Qi Liu Qiangfei Xia Qualcomm Chinese Academy of Sciences University of Massachusetts Keunhwi Cho Thomas Mueller Samsung Vienna University of Technology Microwave, Millimeter Wave and Analog Technology Charles Chu Kosuke Nagashio Committee AMAT University of Tokyo Yanning Sun, Chair IBM Guo Dechao Susanna Reggiani IBM University of Bologna Didier Belot CEA-LETI Oleg Golonzka WooBin Song Intel Samsung Nadine Collaert IMEC Ying Li Aida Todri-Sanial LAM CNRS Frederic Gianesello Yao-Jen Lee Memory Technology STMicroelectronics TSRI Committee Gao-Wei Huang Masaharu Kobayashi, Chair Ying Li TSRI University of Tokyo LAM Tian-Wei Huang Huai-Yu Cheng Lee Rinus NTU Macronix GF Scott Johnson Yingda Dong Stefan Schultz Globalfoundries Malta Micron Technologies Chemnitz David Meyer Jan van Houdt Huiling Shang Naval Research IMEC TSMC Mitsuru Takenaka Guohan Hu Anabela Veloso University of Tokyo IBM IMEC Miguel Urteaga Keiji Ikeda Wang Zhao Teledyne KIOXIA FaceBook Sorin Voinigescu Emerging Device and Pranav Kalavade University of Toronto Compute Technology Intel Committee Yanqing Wu Sangbum Kim Peking University Iuliana Radu, Chair Seoul National University IMEC Modeling and Simulation Jun-Hyuk Lee Committee Stefano Ambrogio Samsung Nuo Xu, Chair IBM TSMC Etienne Nowak Uygar Avci CEA-LETI Philippe Blaise Intel Silvaco Qiwei Ren Jin Cai UniC Memory Technology Co. Ltd. We-Chen Chen TSMC MXIC 2020 IEEE International Electron Devices Meeting 4 Bing Gao Marina Antoniou Guneet Sethi Tsinghua University University of Warwick Amazon Lab126 Elena Gnani Masataka Higashiwaki Charlie Slayman University of Bologna NICT Cisco Jing Guo Digh Hisamoto Tam Lyn Tan University of Florida Hitachi Globalfoundries Singapore Asif Islam Khan Isik Kizilyalli Kirsten Weide-Zaage Georgia Tech ARPA-E Leibniz Universtat Hannover Seungchol Lee Tomoko Matsudai Sensors, MEMs, and SK-Hynix Toshiba Bioelectronics Committee Agnes Tixier-Mita, Chair Ling Li Tomas Palacios University of Tokyo CAS-IME MIT Luca Berdondini Thierry Poiroux Gerhard Prechtl Istituto Italiano di Tecnologia, Genova CEA-LETI Infi neon Technologies Steve Kim Anne Verhulst Sei-Hyung Ryu Air Force Research Laboratories imec Wolfspeed Rakesh Kumar Cory Weber Wataru Saito Globalfoundries Intel Kyushu University Optoelectronics, Displays, Hyunjoo Lee David Sheridan Korea Advanced Institute of Science and Imaging Systems AOS and Technology Committee Becky Peterson, Chair Mihaela Wolf Wen Li University of Michigan FBH Michigan State University Reliability of Systems and Gaelle Lissorgues Anna Lena Giesecke Devices Committee AMO ESIEE Dhanoop Varghesse, Chair Changwon Lee Texas Instruments Tatsuo Nakagawa Hanbat University Hitachi Zhong Chen Jae-Kyu Lee University of Arkansas Stewart Smith Samsung The University of Edinburgh Xavier Garros Chiao Liu CEA-LETI Guangyu Xu FaceBook Inc. University of Massachusetts, Amherst Kazutoshi Kobayashi Shinji Matsuo Kyoto Institute of Technology DN Yaung NTT TSMC Georgios Konstadinidis Albert Theuwissen Google Sufi Zafar TU Delft IBM Chan Lim Arnaud Tournier SK Hynix STMicroelectronics Paolo Pavan Power Devices & Systems University of Padova Committee Peter Moens, Chair Franz Schanovsky On Semiconductor Global TCAD Solutions 2020 IEEE International Electron Devices Meeting 5 Topics of Interest ADVANCED LOGIC TECHNOLOGY (ALT) Papers are solicited in the areas of CMOS platform technology, logic circuit design challenges, advanced node process integration schemes, process module advancements and process control techniques, and device technology co-optimization solutions. Platform technologies include the state-of-art Si technologies, beyond Si channel such as SiGe/Ge, and advanced device technologies such as Gate-All-Around nanowire and stacked nanosheet are of strong interest. Topics include device and circuit performance and scaling approaches, power-performance-area analysis, and architectural implications of inter- connect technology and performance. Papers addressing process integration of heterogeneous channel materials, substrate and isolation technologies, shallow junctions, novel dielectrics and metal electrodes for gate stacks, contact and via processes, interconnect bottleneck, sequential monolithic 3D, heterogeneous chiplets, advanced packaging, and BEOL compatible transistors are solicited. Process module advancements in EUV lithography, deposition, planarization, etch and self-assembly techniques; and process control topics include defect detection as well as novel techniques for variability reduction are of interest. Submission of papers discussing interactions between advanced device technology and circuit design issues such as variability, aging, power constraints, physical layout effects, yield implication and DTCO solutions is highly encouraged. EMERGING DEVICE and COMPUTE TECHNOLOGY (EDT) Papers are solicited on novel devices and concepts that enhance existing or novel computing models. This includes devices based on novel transport mechanisms such as tunnel FET, negative capacitance FET, topological insulators, phase transitions, and Qubit devices. Devices based on low-dimensional systems including 2D materials, nanowires, and quantum dots are welcomed. Neuromorphic and approximate computing devices as well as non-charge-based logic such as magnetic logic, spintronics, and plasmonics are key topics. Submission on Cryo-CMOS for quantum computing enablement and high-per- formance computing is solicited. Furthermore, emerging state machines, continuous time dynamical systems, and lifelong learning machines are also of interest. Papers in EDT focus primarily on device physics, innovative transistor structures, and novel computing concepts; more mature “platform candidate” papers should be submitted to ALT. Reliability assessment of novel devices are also solicited here, while that for more mature technologies/devices should be submitted to RSD. MEMORY TECHNOLOGY (MT) Papers are solicited in all memory technology topics, including embedded and standalone