Resistive contribution in electrical switching experiments with antiferromagnets Tristan Matalla-Wagner,1, ∗ Jan-Michael Schmalhorst,1 G¨unter Reiss,1 Nobumichi Tamura,2 and Markus Meinert3, y 1Center for Spinelectronic Materials and Devices, Bielefeld University, Universit¨atsstraße 25, D-33501 Bielefeld, Germany 2Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA 3Department of Electrical Engineering and Information Technology, Technical University Darmstadt, D-64283 Darmstadt, Germany (Dated: October 22, 2019) Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density nec- essary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is exper- imentally seen as a \saw-tooth"-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution. I. INTRODUCTION tween sense current density and magnetic moments. The experiment is performed by recording the transverse volt- age V? = R?Is with a fixed sense current Is in a device The possibility to switch the magnetic order of an- as sketched in Fig. 1 (a). In this type of experiments, tiferromagnets (AFM) with electric currents has been Cheng et al. identified a \saw-tooth"-shaped contribu- predicted about five years ago1. It was theoretically tion in R? measurements arising from the Pt layer for shown that materials of certain symmetry can exhibit large current density12, which is of nonmagnetic origin. staggered nonequilibrium spin polarization. If these co- It was found to be larger than the magnetic contribution incide with the crystallographic positions of the staggered to the transverse electrical response in some cases. magnetic moments, a net torque on the antiferromagnetic order arises, which enables its current-driven reorienta- tion. While the effect was predicted for Mn2Au, its first realization was demonstrated with CuMnAs2. Later, the 3{5 N´eel-orderswitching was also shown for Mn2Au films . A greater variety of AFM can be switched using het- erostructures that utilize the spin Hall effect (SHE) in In the present manuscript, we investigate the origin of an adjacent heavy metal (HM) like Pt to exert an anti- this nonmagnetic contribution to the electrical response damping torque on the N´eel-order6{11. The reorientation of the star-shaped structures. We chose paramagnetic can be realized with cross-shaped planar devices, where Nb films as a model system, because here no magnetic electrical pulses driven through the orthogonal lines al- contribution is present. Two different types of films are low for a reproducible switching of the N´eel-orderby compared, grown either at room temperature (polycrys- 90◦. In AFM/HM heterostructures there are two pos- talline) or at high temperature (epitaxial). We ana- sible readout mechanisms with identical symmetry. The lyze the R? response to current pulses and inspect the spin-polarized current in the HM is partially absorbed star-shaped devices in operando by x-ray microdiffrac- by the AFM, which depends on the relative orientation tion (µXRD) and scanning electron microscopy (SEM). of the polarization and the magnetic moments in the Our findings are consistent with the results presented in 12 AFM. This gives rise to the spin Hall magnetoresistance Ref. , where a change of R? with the planar Hall effect arXiv:1910.08576v1 [cond-mat.mtrl-sci] 18 Oct 2019 (SMR). The second mechanism is the anisotropic magne- symmetry is observed in Pt films. We interpret this ob- toresistance (AMR). In both cases, typically ρxx > ρyy servation as a local variation of the film resistivity which for the current flowing parallel or perpendicular to the gives rise to a R? change ∆R? with alternating sign magnetic moments is found. In single layer switching ex- for the different pulsing directions. Calculations using periments, only the AMR is available for electrical read- a finite-element-method (FEM) show that the effect size out. To observe the rather small resistivity change as- is in quantitative agreement with this explanation. Fur- sociated with the AMR or SMR, it is favorable to mea- thermore we see that the sign of ∆R? can change within sure in transverse geometry. For a sense current den- one experiment highlighting that at least two processes of sity j, the associated transverse electric field is given by nonmagnetic origin can be present in such experiments, E? = j (ρxx − ρyy) sin (2')=2, where ' is the angle be- related to locally decreasing or increasing resistivities. 2 (a) as depicted in Fig. 1 (a) by photolithography and wire- V bonded into IC packages. On each sample, half of the devices have their pulse lines x (y) aligned parallel to the [100] ([010]) direction of the substrate, the other half of I ◦ s + the devices are rotated by 45 . y- The experimental procedure for the electrical experi- ments is similar to our experiment on N´eel-orderswitch- ing in CuMnAs, see Ref.13. We apply n bursts of current pulses to our structure in one of two orthogonal direc- Cx- x+ tions x and y (cf. Fig. 1 (a)). The pulses have a length of ∆t = 1 − 10 µs and a duty cycle of 10−2. The num- y+ ber of pulses per burst is not constant in this work but y typically a burst consists of around 100 pulses. After each burst, we measure R? with a lock-in amplifier. We also observe the evolution of R? after the burst sequence substrate during a relaxation-phase. The pulse-line resistances Rx + 25 �m and Ry are measured prior to the burst sequence with a Keithley 2000 multimeter to set the voltage output of x the arbitrary waveform generator accordingly. The ex- periments are additionally performed with simultaneous (b) µXRD measurements or SEM imaging. The µXRD in- vestigation was conducted at beamline 12:3:2 of the Ad- vanced Light Source (ALS), Berkeley, California, USA14. We measure diffraction patterns with a PILATUS 1M de- tector and an integration time of 10 − 30 s for the beam located on the constrictions of each pulseline and in the (a) 198 5 th repeat ) W 196 (m Figure 1. Sample preparation. (a) Schematic of the device. ^ 194 Current pulses can be applied to the pulse lines parallel to the R x- or y-axis. The red and black arrows indicate the conven- 192 RT sample tional current direction for positive polarity. An AC sensing 0 20 40 60 current Is is applied to a probe line and the voltage V is mea- sured perpendicular to Is. The pulse and probe lines have a time (minutes) width of 8 µm and 4 µm, respectively. Yellow circles show the -52 positions of the x-ray spot for µXRD measurements and the (b) nomenclature for the positions. (b) XRD measurements of -56 unpatterned Nb films grown at room-temperature (RT) and ) W 400 ◦C (high-temperature, HT) directly after deposition. -60 (m ^ R -64 HT sample II. SAMPLE CHARACTERISTICS AND -68 EXPERIMENTAL SETUP 0 5 10 15 20 time (minutes) Samples of MgO (001) / Nb 25 nm / Si 2 nm were grown by magnetron sputtering at room temperature ◦ Figure 2. Pulsing experiment. (a) Pulses with j = 7:5 × (RT) and at 400 C (high-temperature, HT). The Si cap- 1011 A=m2 and ∆t = 10 µs are applied to a device on the RT ping prevents oxidation of the films. The film quality is sample with x k MgO[100]. The colors of the data points characterized by x-ray diffraction (XRD). The RT sam- match the arrows in Fig. 1 (a) to identify the pulsing and ple shows no preferred growth direction, whereas the HT the relaxation phase. The arrows here accentuate the sign of sample grows in (110) direction, see Fig. 1 (b). The re- dR?=dt that correlates with a certain pulsing direction. This sistivities are ρRT = 27:4 Ωcm and ρHT = 23:5 Ωcm, sign inverts after the fifth repeat. (b) A similar measurement µ µ 11 2 determined by four-point measurements on the films. performed at the HT sample with j = 11:0 × 10 A=m and Finally, the films are patterned to star-shaped devices ∆t = 2 µs. 3 (a) 20 11 9.0 x 10 A/m² A/m² A/m² A/m² A/m² pulsing || y ) 11 11 11 11 W 10 5.0 x 10 5.5 x 10 6.0 x 10 6.5 x 10 (m 0 ^ R D 11 11 11 11 -10 7.0 x 10 A/m² 7.5 x 10 A/m² 8.0 x 10 A/m² 8.5 x 10 A/m² 0 100 200 300 400 500 600 700 (b) 85.8 ) W 85.6 pulsing || y ( x R 85.4 0 100 200 300 400 500 600 700 burst index (c) (d) 89.0 11 11 0 9.5 x 10 A/m² 9.0 x 10 A/m² ) 88.0 ) W -40 e W ( (m 87.0 x ^ -80 f R R D 11 86.0 11 -120 9.0 x 10 A/m² 9.5 x 10 A/m² 680 720 760 800 840 680 720 760 800 840 burst index burst index (e) (f) Figure 3.