NTE2077 Integrated Circuit 6−Stage Darlington Transistor Array W/Clamp Diode

NTE2077 Integrated Circuit 6−Stage Darlington Transistor Array W/Clamp Diode

NTE2077 Integrated Circuit 6−Stage Darlington Transistor Array w/Clamp Diode Description: The NTE2077is a six−circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high−current driving with ex- tremely low input−current supply. Features: • High breakdown voltage (BVCEO ≥ 40V) • High−current driving (IC(max) = 150mA) • With clamping diodes • Driving available with PMOS IC output of 8V to 18V • Wide input voltage range (VI = −40V to +40V) • Wide operating temperature range (TA = −20° to +75°C) Absolute Maximum Ratings: (TA = −20° to +75°C unless otherwise specified) Collector−Emitter Voltage (Output, H), VCEO . −0.5V to +40V Collector Current, IC (Current per Circuit Output, L) . 150mA Input Voltage, VI . −40V to 40V Clamp Diode Forward Current, IF . 150mA Clamp Diode Reverse Voltage, VR . 40V Power Dissipation (TA = +25°C, when mounted on board), PD . 1.47W Operating Ambient Temperature Range, Topr . −20° to +75°C Storage Temperature Range, Tstg . −55° to +125°C Recommended Operational Conditions: (TA = −20° to +75°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage VO 0 − 40 V Collector Current per Channel IC Percent Duty Cycle Less than 50% 0 − 150 mA “H” Input Voltage VIH 7 − 35 V “L” Input Voltage VIL 0 − 1 V Electrical Characteristics: (TA = −20° to +75°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO ICER = 100μA 40 − − V Collector−Emitter Saturation Voltage VCE(sat)()VI = 7V, IC = 150mA − 1.1 1.7 V VI = 7V, IC = 100mA − 1.0 1.4 V Input Current Il VI = 18V − 0.9 1.8 mA VI = 35V − 1.9 5.0 mA Input Reverse Current IIR VI = −35V − − −20 μA Clamping Diode Forward Voltage VF IF = −150mA − 1.15 1.6 V Clamping Diode Reverse Current IR VR = 40V − − 100 μA DC Amplification Factor hFE VCE = 4V, IC = 150mA, 800 2500 − TA = +25°C Switching Characteristics: (TA = +25° unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Turn−On Time ton CL = 15pF (Note 1) − 35 − ns Turn−Off Time toff − 300 − ns Note 1. Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, ZO = 50Ω, VP = 7Vp−p Pin Connection Diagram Input 1 1 14 Output 1 Input 2 2 13 Output 2 Input 3 3 12 Output 3 Input 4 4 11 Output 4 Input 5 5 10 Output 5 Input 6 6 9 Output 6 GND 7 8 Common 14 8 17 .785 (19.95) .300 Max (7.62) .200 (5.08) Max .100 (2.45) .099 (2.5) Min .600 (15.24).

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