Engineering Materials For further volumes: http://www.springer.com/series/4288 Alexei Nazarov • J.-P. Colinge • Prof. Francis Balestra • Prof. Jean-Pierre Raskin • Prof. Francisco Gamiz • Prof. V.S. Lysenko Editors Semiconductor-On-Insulator Materials for Nanoelectronics Applications 123 Editors Prof. Dr. Alexei Nazarov Prof. J.-P. Colinge Lashkaryov Institute of Semiconductor Tyndall National Institute ‘‘Lee Maltings’’ Physics Prospect Row National Academy of Sciences of Ukraine University College Prospect Nauki 41 Cork Kyiv 03028, Ukraine Ireland e-mail: [email protected] e-mail: [email protected] Prof. Francis Balestra Prof. Jean-Pierre Raskin Sinano Institute Microwave Laboratory IMEP-LAHC Universite´Catholique de Louvain rue Parvis Louis Ne´el 3 Place du Levant 3 a´ 38016 Grenoble Cedex 1 B-1348 Louvain France Belgium Prof. Francisco Gamiz Prof. V.S. Lysenko Nanoelectronics Research Group Lashkaryov Institute of Semiconductor Departmento de Electro´nica Physics Universidad de Granada National Academy of Sciences of Ukraine Granada Prospect Nauki 41 Spain Kyiv 03028, Ukraine ISSN 1612-1317 e-ISSN 1868-1212 ISBN 978-3-642-15867-4 e-ISBN 978-3-642-15868-1 DOI 10.1007/978-3-642-15868-1 Springer Heidelberg Dordrecht London New York Ó Springer-Verlag Berlin Heidelberg 2011 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcast- ing, reproduction on microfilm or in any other way, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer. Violations are liable to prosecution under the German Copyright Law. The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Cover design: deblik, Berlin Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Introduction This Book is devoted to the fast evolving field of nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) substrates. It compiles the results of research work from leading companies and universities in Europe, Russia, Brazil and Ukraine. Main of the Authors are involved in the NANOSIL Network of Excellence and the Thematic Network on Silicon on Insulator Technology, Devices and Circuits EUROSOI+ , both of which are funded by the European Commission under the 7th Framework Program of the European Community. This Book describes different technologies and approaches used to fabricate Semiconductor-On-Insulator materials, devices and systems. The contributed papers are articulated around four main themes: 1. Fabrication of new semiconductor-on-insulator materials 2. Physics of modern SemOI devices 3. Advanced characterization of SemOI devices 4 Sensors and MEMS on SOI. The first chapter is focused on techniques for producing new SemOI materials. The formation of thin germanium-on-insulator films allows one to fabricate a wide variety of devices and constitutes a fundamental step towards the design of monolithic hybrid Si–Ge systems and integrated circuits. SOI wafers on high- resistivity substrates can be used for RF and mixed-signal system-on-a chip (SoC) applications. Special substrates employing porous silicon technology allows one to fabricate III–V and column-IV alloy semiconductor films on dielectric substrates. Confined and guided growth of silicon nanoribbons creates new technological opportunities for the fabrication of field-effect transistors and ICs. The second Chapter is devoted to the physics and electrical properties of novel SemOI devices such as ultrathin-body, fully depleted SOIMOSFETS scaled down to 22 nm and beyond, multigateFinFET devices, nanowire transistors using either lightly doped or highly doped silicon (junctionlessMOSFETs), carbon nanotubes (CNTMOSFETs) and single-electron devices. Novel phenomena such as quantum v vi Introduction effects and Coulomb blockade effect occurring in nanoscale devices are described as well. The third part of the Book focuses on advanced electrical characterization techniques for nanoelectronic devices, such as novel methods for extracting mobility, transconductance and noise. Finally, the fourth Chapter is devoted to application of SemOI materials for biosensors, chemical sensors and MEMS. The use of SemOI substrates allow for considerable increase of sensitivity of the sensors, as well as for the fabrications of MEMS compatible with CMOS technology. This Book will be useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested by new directions in modern electronics and optoelectronics. The editors would like to express their gratitude to SergeyGordienko for his help collating and formatting the different manuscripts and, of course, to the Springer Editor Dr. Mayra Castro for her highly appreciated assistance throughout the editing process. Alexei Nazarov J.-P. Colinge Francis Balestra Jean-Pierre Raskin Francisco Gamiz V.S. Lysenko Contents Part I New Semiconductor-On-Insulator Materials Germanium Processing ................................... 3 H. Gamble, B. M. Armstrong, P. T. Baine, Y. H. Low, P. V. Rainey, S. J. N. Mitchell and D. W. McNeill Low-Temperature Fabrication of Germanium-on-Insulator Using Remote Plasma Activation Bonding and Hydrogen Exfoliation ...... 31 C. A. Colinge, K. Y. Byun, I. P. Ferain, R. Yu and M. Goorsky Engineering Pseudosubstrates with Porous Silicon Technology ...... 47 N. P. Blanchard, A. Boucherif, Ph. Regreny, A. Danescu, H. Magoariec, J. Penuelas, V. Lysenko, J.-M. Bluet, O. Marty, G. Guillot and G. Grenet Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers ................................ 67 A. Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche and C. Maurice SOI CMOS: A Mature and Still Improving Technology for RF Applications...................................... 91 Jean-Pierre Raskin vii viii Contents Part II Physics of Modern SemOI Devices Silicon-based Devices and Materials for Nanoscale FETs .......... 123 Francis Balestra FinFETs and Their Futures ................................ 141 N. Horiguchi, B. Parvais, T Chiarella, N. Collaert, A. Veloso, R. Rooyackers, P. Verheyen, L. Witters, A. Redolfi, A. De Keersgieter, S. Brus, G. Zschaetzsch, M. Ercken, E. Altamirano, S. Locorotondo, M. Demand, M. Jurczak, W. Vandervorst, T. Hoffmann and S. Biesemans Ultrathin Body Silicon on Insulator Transistors for 22 nm Node and Beyond ....................................... 155 T. Poiroux, F. Andrieu, O. Weber, C. Fenouillet-Béranger, C. Buj-Dufournet, P. Perreau, L. Tosti, L. Brevard and O. Faynot Ultrathin n-Channel and p-Channel SOI MOSFETs .............. 169 F. Gámiz, L. Donetti, C. Sampedro, A. Godoy, N. Rodríguez and F. Jiménez-Molinos Junctionless Transistors: Physics and Properties ................ 187 J. P. Colinge, C. W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, A. Kranti and R. Yu Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current Device Through 3D Non-Equilibrium Green Function Simulations................................ 201 Aryan Afzalian, Jean-Pierre Colinge and Denis Flandre Ohmic and Schottky Contact CNTFET: Transport Properties and Device Performance Using Semi-classical and Quantum Particle Simulation ........................... 215 Huu-Nha Nguyen, Damien Querlioz, Arnaud Bournel, Sylvie Retailleau and Philippe Dollfus Quantum Simulation of Silicon-Nanowire FETs ................. 237 Marco Pala Single Dopant and Single Electron Effects in CMOS Devices ....... 251 M. Sanquer, X. Jehl, M. Pierre, B. Roche, M. Vinet and R. Wacquez Contents ix Part III Diagnostics of the SOI Devices SOI MOSFET Transconductance Behavior from Micro to Nano Era .................................. 267 J. A. Martino, P. G. D. Agopian, E. Simoen and C. Claeys Investigation of Tri-Gate FinFETs by Noise Methods ............. 287 N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen and C. Claeys Mobility Characterization in Advanced FD-SOI CMOS Devices ..... 307 G. Ghibaudo Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs..................................... 323 T. Rudenko, V. Kilchytska, J.-P. Raskin, A. Nazarov and D. Flandre Part IV Sensors and MEMS on Memory SOI SOI Nanowire Transistors for Femtomole Electronic Detectors of Single Particles and Molecules in Bioliquids and Gases.......... 343 V. P. Popov, O. V. Naumova and Yu. D. Ivanov Sensing and MEMS Devices in Thin-Film SOI MOS Technology .... 355 J.-P. Raskin, L. Francis and D. Flandre Floating-Body SOI Memory: The Scaling Tournament ............ 393 M. Bawedin, S. Cristoloveanu, A. Hubert, K. H. Park and F. Martinez Part V Afterword A Selection of SOI Puzzles and Tentative Answers ............... 425 S. Cristoloveanu, M. Bawedin, K.-I. Na, W. Van Den Daele, K.-H. Park, L. Pham-Nguyen, J. Wan, K. Tachi, S.-J. Chang, I. Ionica, A. Diab, Y.-H. Bae, J. A. Chroboczek, A.