TS420 Sensitive gate 4 A SCRs Datasheet − production data Description A2 Thanks to highly sensitive triggering levels, the TS420 is suitable for all applications where the G available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage A1 A crowbar protection for low power supplies among A others. Available in through-hole and surface-mount packages, they provide an optimized performance K in a limited space area. K A A G IPAK G TO -220A B Table 1. Device summary A Voltage Order code Sensitivity Package 600 V K A TS420-XXXB X DPAK G DPAK TS420-XXXH X IPAK 0.2 mA TO- TS420-XXXT X 220AB Features • On-state rms current, 4 A • Repetitive peak off-state voltage (VDRM, VRRM) 600 V • Triggering gate current, 0.2 mA May 2014 DocID5203 Rev 5 1/13 This is information on a product in full production. www.st.com 13 Characteristics TS420 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current (180° conduction angle) Tc = 115°C 4 IT(AV) Average on-state current (180° conduction angle) Tc = 115 °C 2.5 A tp = 8.3 ms 33 ITSM Non repetitive surge peak on-state current Tjinitial = 25 °C tp = 10 ms 30 ² ² 2 I tIt value for fusing tp = 10 ms Tj = 25 °C 4.5 A S Critical rate of rise of on-state current, dI/dt F = 60 Hz Tj = 125 °C 50 A/µs IG = 10 mA, dIG/dt = 0.1 A/µs IGM Peak gate current tp = 20 µs 1.2 A PG(AV) Average gate power dissipation 0.2 W VRGM Maximum peak reverse gate voltage 5 Tstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 Table 3. Device timings Symbol Parameter Test conditions Value Unit ITM = 10 A, VD = VDRM(max), IGT = 10 mA, tGT Gate controlled turn on time 0.5 (Typ.) dIG/dt = 0.2 A/µs, RG = 1 k Ω , Tj = 25 °C µs VD = 67% VDRM(max), Tj = 125 °C, ITM = 8 A, tQ Circuit controlled turn off time VR = 10 V, dIT/dt = 10 A/µs, 60 (Typ.) Ω dVD/dt = 2 V/µs, RG = 1 k 2/13 DocID5203 Rev 5 TS420 Characteristics Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Value Unit IGT Max. 100 µA VD = 12 V, RL = 33 Ω VGT Max. 0.8 V Ω, VGD VD = VDRM, RL = 33 k RGK = 220 Ω Tj = 125 °C Min. 0.1 V IH IT = 50 mA, RGK = 1 k Ω Max. 5 mA IL IG = 2 mA, RGK = 1 k Ω Max. 6 mA dV/dt VD = 67% VDRM, RGK = 220 Ω Tj = 125 °C Min. 5 V/µs VTM ITM = 8 mA, tP = 380 µs Tj = 25 °C Max. 1.6 V Vt0 Threshold voltage Tj = 125 °C Max. 0.85 V Rd Dynamic resistance Tj = 125 °C Max. 90 m Ω I Tj = 25 °C 5µA DRM V = V , gate shorted Max. I DRM RRM RRM Tj = 125 °C 1 mA Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 3.0 °C/W S(1) = 0.5 cm² DPAK 70 Rth(j-a) Junction to ambient (DC) IPAK 100 °C/W TO-220AB 60 1. Copper surface under tab Figure 1. Maximum average power dissipation Figure 2. Average and DC on-state current versus average on-state current versus case temperature P(W) IT(AV) (A) 4.0 5.0 4.5 3.5 α = 180° DC 4.0 3.0 3.5 2.5 3.0 α = 180° 2.0 2.5 2.0 1.5 1.5 1.0 360° 1.0 0.5 α 0.5 IT(AV) (A) Tcase (°C) 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 DocID5203 Rev 5 3/13 Characteristics TS420 Figure 3. Average and DC on-state current Figure 4. Relative variation of thermal versus ambient temperature (DPAK) impedance junction to ambient versus pulse duration (DPAK) I(A)T(AV) K=[Zth(j-c) /R th(j-c) ] 2.0 1E+0 1.8 Device mounted on FR4 with recommended pad layout 1.6 DC DPAK (S = 0.5cm2 ) Zth(j-c) α 1.4 = 180° 1E-1 1.2 1.0 Zth(j-a) 0.8 IPAK 1E-2 0.6 DC α = 180° 0.4 Device mounted on FR4 with 0.2 recommended pad layout Tamb (°C) tp (s) 0.0 1E-3 0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 5. Relative variation of gate trigger Figure 6. Relative variation of holding current current and holding current versus junction versus gate-cathode resistance (typical values) temperature Ω I,I,I[T] /I ,I ,I [T =25°C] IHGKH [R ] / I [RGK =1k ] GTHLj GT H L j 5 2.0 1.8 Tj = 25°C 1.6 4 1.4 IGT 1.2 3 IH and IL 1.0 R=GK 1kΩ 0.8 2 0.6 0.4 1 0.2 Tj (°C) R(k)Ω 0.0 GK 0 -40 -20 0 20 40 60 80 100 120 140 1E-2 1E-1 1E+0 1E+1 Figure 7. Relative variation of dV/dt immunity Figure 8. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) versus gate-cathode capacitance (typical values) Ω dV/dt[RGK ] / dV/dt[RGK =220Ω ] dV/dt[CGK ] / dV/dt[RGK =220 ] 10.00 10 Tj = 125°C VD = 0.67 x V DRM VD = 0.67 x V DRM 8 Tj = 125°C RGK = 220Ω 1.00 6 4 0.10 2 R(k)GK Ω CGK (nF) 0.01 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 2 4 6 8 10 12 14 16 18 20 22 4/13 DocID5203 Rev 5 TS420 Characteristics Figure 9. Surge peak on-state current versus Figure 10. Non-repetitive surge peak on-state number of cycles current, and corresponding values of I2t 22 I(A)TSM ITSM (A), I t (A s) 35 300 Tj initial = 25°C 30 dI/dt limitation 100 tp =10ms ITSM 25 One cycle 20 Non repetitive Tj initial=25°C 15 10 2 10 Repetitive I t TC =115°C 5 Sinusoidal pulse with width tp < 10 ms Number of cycles tp (ms) 0 1 1 10 100 1000 0.01 0.10 1.00 10.00 Figure 11. On-state characteristics Figure 12. Thermal resistance junction to (maximum values) ambient versus copper surface under tab ITM (A) Rth(j-a) (°C/W) 50.0 100 Epoxy printed circuit board FR4 Tj max.: copper thickness = 35 µm Vt0 =0.85V Ω Rd =90m 80 10.0 60 Tj=max 40 1.0 Tj =25°C 20 VTM (V) S(cm²) 0.1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 18 20 DocID5203 Rev 5 5/13 Package information TS420 2 Package information • Epoxy meets UL94, V0 • Lead-free packages • Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 13. DPAK dimension definitions A E b4 c2 E1 L2 D1 D D H A1 L4 E1 b e1 c V2 A2 L Note: this package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. 6/13 DocID5203 Rev 5 TS420 Package information Table 6. DPAK dimension values Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 2.18 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.60 0.018 0.023 D 5.97 6.22 0.235 0.244 D1 5.10 0.201 E 6.35 6.73 0.250 0.264 E1 4.32 0.170 e1 4.40 4.70 0.173 0.185 H 9.35 10.40 0.368 0.409 L 1.00 1.78 0.039 0.070 L2 1.27 0.05 L4 0.60 1.02 0.023 0.040 V2 0° 8° 0° 8° Figure 14. Footprint (dimensions in mm) 6.7 3.0 3.0 A 5.094 6.7 B 1.6 The device must be positioned within 0.05 A B DocID5203 Rev 5 7/13 Package information TS420 Figure 15. IPAK dimension definitions E A b4 c2 L2 V1 D C L1 H A1 b2 e L b c e1 Note: this package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. 8/13 DocID5203 Rev 5 TS420 Package information Table 7. IPAK dimension values Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 b 0.64 0.90 0.025 0.035 b2 0.95 0.037 b4 5.20 5.43 0.204 0.213 c 0.45 0.60 0.017 0.023 c2 0.46 0.60 0.018 0.023 D 6 6.20 0.236 0.244 E 6.40 6.70 0.252 0.263 e2.280.090 e1 4.40 4.60 0.173 0.181 H 16.10 0.634 L 9 9.60 0.354 0.377 L1 0.8 1.20 0.031 0.047 L2 0.80 1.25 0.031 0.049 V1 10° 10° DocID5203 Rev 5 9/13 Package information TS420 Figure 16.