Quantum Phenomena in Low-Dimensional Systems Michael R. Geller Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602-2451 (June 18, 2001) A brief summary of the physics of low-dimensional quantum systems is given. The material should be accessible to advanced physics undergraduate students. References to recent review articles and books are provided when possible. I. INTRODUCTION transverse eigenfunction and only the plane wave factor changes. This means that motion in those transverse di- A low-dimensional system is one where the motion rections is \frozen out," leaving only motion along the of microscopic degrees-of-freedom, such as electrons, wire. phonons, or photons, is restricted from exploring the full This article will provide a very brief introduction to three dimensions of our world. There has been tremen- the physics of low-dimensional quantum systems. The dous interest in low-dimensional quantum systems dur- material should be accessible to advanced physics under- ing the past twenty years, fueled by a constant stream graduate students. References to recent review articles of striking discoveries and also by the potential for, and and books are provided when possible. The fabrication of realization of, new state-of-the-art electronic device ar- low-dimensional structures is introduced in Section II. In chitectures. Section III some general features of quantum phenomena The paradigm and workhorse of low-dimensional sys- in low dimensions are discussed. The remainder of the tems is the nanometer-scale semiconductor structure, or article is devoted to particular low-dimensional quantum semiconductor \nanostructure," which consists of a com- systems, organized by their \dimension." positionally varying semiconductor alloy engineered at the atomic scale [1]. Traditionally one would not in- clude naturally occurring low-dimensional entities such II. MAKING LOW-DIMENSIONAL QUANTUM as atoms and molecules in the subject of this article, but STRUCTURES some of the most exciting recent developments in the field have involved the use of molecules and even biologically The most common method of fabricating low- important materials and has blurred the boundaries be- dimensional structures is by \growing" compositionally tween the subject and other physical and life sciences. In graded semiconductor alloys in high-vacuum molecular- addition, there are systems of great interest in physics, beam epitaxy (MBE) machines. Take, for example, the such as high-temperature superconductors, where the ef- homogeneous alloy AlcGa1 cAs consisting of a periodic fects of reduced dimensionality are believed to be essen- array of arsenic atoms together− with a fraction c of alu- tial, and these too will be regarded as low dimensional. minum and 1 c of gallium. The special cases of c = 0 Many of the subjects covered here are central to the cur- and c = 1 corresp− ond to the crystalline semiconductors rently fashionable fields of nanoscience and nanotechnol- GaAs and AlAs, each with a distinct band structure. The ogy [2,3]. microscopic potential produced by the alloy AlcGa1 cAs, The study of low-dimensional quantum phenomena has although not strictly periodic, may be regarded as−pro- led to entirely new fields of research, such as the physics ducing a band structure interpolating between that of of mesoscopic systems, which will be discussed below. GaAs and AlAs. In particular, the energy gap between arXiv:cond-mat/0106256 v1 13 Jun 2001 And low-dimensional systems have shed new light on the the valence and conduction bands varies with c. difficult questions of how disorder (impurities, for exam- Structures that confine electrons are made by chang- ple) and electron-electron interaction affect a quantum ing the aluminum fraction c during crystal growth, system. In fact, understanding the combined effects of leading to a compositionally graded alloy of the form disorder and interactions in condensed matter systems is Alc(r)Ga1 c(r)As, where c varies spatially. The result- currently a problem of enormous interest. ing band structure− variation produces a spatially varying How are electrons, say, restricted from moving in three conduction band minimum. Hence, an electron added to dimensions? The answer is confinement. Take, for exam- the conduction band through doping, optical excitation, ple, an electron inside a long wire: The positively charged or electrical injection, sees a position-dependent poten- ions in the wire produce an electric field that prevents the tial. By varying c appropriately, one can engineer confin- electrons from escaping. Often, in fact, one can regard ing potentials that restrict electron motion to fewer than the electrons as being subjected to a hard-wall poten- three dimensions. tial at the wire's surface. The electronic eigenstates are In practice, however, it is possible to vary c in one di- given by a plane wave running along the wire multiplied rection only, resulting in, at best, a two-dimensional sys- by a localized function in the transverse directions. For tem. To complete the construction of a semiconductor a range of low energies the eigenstates have the same nanostructure it is often necessary to follow growth with 1 lithography, the selective etching of prepared surfaces. A. Effective Mass Theory After coating a surface with a protective material, the \resist," patterns are imprinted on the resist in a pho- Electrons in semiconductor nanostructures move in the tographic processes with focused light, electron beams, presence of as many as three fields; the periodic or nearly or even atoms. After the imprinted pattern is removed periodic potentials produced by the atoms in the crystal, chemically, the underlying semiconductor is etched away, fields applied externally, and the electron-electron inter- leaving an environment that confines electrons both in action potential. The atomic potentials, which vary at the MBE-growth direction and laterally (perpendicular the few Angstrom scale, are usually varying much more to the growth direction). Another common way to pro- rapidly than the others. In this case, assuming the elec- duce lateral confinement is to use lithographic techniques tronic states have energies near the bottom of the conduc- to pattern metallic electrodes, or \gates," on the surface tion band or near the top of the valence band, there is an of an crystal (grown by MBE, for example) that has elec- extremely useful description whereby the original prob- trons confined in a buried two-dimensional layer parallel lem of an electron moving in the presence of the atomic to that surface. By applying voltages to these electrodes, as well as other potentials is replaced by the much sim- electrons in the layer can be depleted from or attracted pler problem of an electron, now with a different mass, to the regions below the electrodes. moving in the presence of the slowly varying fields only Finally, it is in many cases necessary to attach electri- [4]. For example, the effective mass of an electron in a cal contacts to the electron gases inside these nanostruc- GaAs conduction band is about 0:067 times the ordinary tures and to the metal gates on their surfaces. bare mass. In general, the effective mass depends on the The lower limit to the size of the structures one can electron's propagation direction, and can even vary with make is usually determined by the size of the patterns position. one can make with lithography, which, in turn, is usually determined by the quality of the image formed during the exposure stage. At the time of this writing the semi- B. Density of States conductor industry can produce, in an integrated circuit, wires with a thickness of only 10 nm, more than 10 times smaller that the wavelength of visible light. An important distinction between systems with differ- To make even smaller structures naturally occurring ent dimensionality is their density of states N(), which nanometer-scale systems have used. Examples include is the number of states per unit \volume" LD in an en- self-assembled nanostructures and structures incorporat- ergy range to + d, divided by d. L is the linear size ing molecules or biological materials. A self-assembly of the system, and D can be either 1, 2, or 3. (The zero- technique to make arrays of few-nanometer quantum dots dimensional case has to be treated separately). A sim- (small “artificial atoms" where electrons are confined in ple general formula can be derived to determine the en- all three dimensions) by growing a thin layer of highly ergy dependence of N(): Given an excitation (electron, strained material on top of another crystal has been par- phonon, photon) with disperion relation (k) k α, / j j ticularly successful. The strained layer relaxes by break- the number of states contained within a D-dimensional ing into small islands, which form the quantum dots. An sphere of radius k in momentum space is proportional to excellent example of the use of molecules to make low- (L=2π)DkD and the number per unit volume is therefore dimensional systems is provided by large carbon sheets proportional to kD or D/α. The density of states is evi- that can be rolled into stable hollow spheres, known as dently the derivative of the latter with respect to energy, D 1 Bucky balls, or into carbon nanotubes. It is even pos- so N α − . Phonons and photons (α = 1) in three sible to put other molecules inside a Bucky ball, to ar- dimensions/ have N 2, and in lower dimensions would D 1 / range Bucky balls into a molecular crystal, and to elec- have N − as long as the dispersion remains linear. trically contact individual nanotubes. Electrical contacts Electrons/ (α = 2) have a density of states proportional 1 0 1 have also been attached to other molecules, turning them to 2 , (i.e., energy independent), and − 2 in 3, 2, and into \transistors." Polymers and even DNA strands have 1 dimensions, respectively.