Please inquire for pricing and availability of listed products to our local sales representatives. 1 Organic Transistor (OFET) Materials Organic field-effect transistors (OFETs) are promising devices. In general, the expansion and extension of π-conjugation components for the next-generation electronic devices. In 1984, is an effective strategy in the molecular design of OFET molecules OFET research began with the first report of mobility in a and polymers. As an example, Pentacene, which consists of 5 merocyanine dye-based field-effect device by Kudo et al.1) Since fused benzene rings, possesses superior electrical properties high hole mobility (1.5 cm2/Vs), which comparable to that of compared to that of Tetracene, which consists of 4 fused benzene amorphous silicon, was achieved using a pentacene-based OFET rings. 8) However, a linear increase in the number of fused aromatic device in 1997,2) the possibility of a practical application of OFET’s rings in a simple hydrocarbon system raises the Highest Occupied became realistic and the research field became quite popular Molecular Orbital（HOMO), resulting in a critical decrease in the worldwide. While silicon has performed well in devices, the air-stability of the molecule and semiconductor materials. 8) This inorganic nature of them prohibits flexible structures. As a result, trade-off issue between the mobility and the air-stability of the OFETs have attracted much attention for their potential to be materials has been a key problem to overcome. Given this context, flexible, thin and light-weight, which could be applicable for in 2006 DPh-BTBT [D3526], a thienothiophene-fused organic foldable electronic circuits and implantable biometric sensors. 3, 4) compound, had been reported by Takimiya et al., as an innovative A noted potential application with OFET’s involves their OFET material.9) DPh-BTBT features a deep HOMO level (-5.6 “printability”. Printed electronics are an innovative technology for eV), which leads to remarkable air-stability during OFET device mass and low cost device productions, which could allow for the performance, and the HOMOs are well-distributed over the sulfur production of high density and large circuits on flexible substrates atoms of the thienothiophene moieties inducing good hole carrier such as paper and plastic films. A fusion of “Printed electronics” transport. DPh-BTBT-based FET devise further achieved excellent and “Organic transistors” could offer especially promising electrical properties with a high hole mobility of 2.0 cm2/Vs. technology by allowing for low cost and large scale manufacture of Followed by the innovation and molecular design of DPh-BTBT, various functional devices. 5-7) Ph-BTBT-10, an smectic E (SmE) liquid crystalline material, was One of the functional parameters evaluated in organic recently reported by Hanna et al., as a p-type material that bears semiconductor materials is mobility (μ), which indicates how fast an asymmetric structure in which the alkyl and the phenyl group the holes (p-type) or electrons (n-type) within the semiconducting are substituted on one side of the benzothienobenzothiophene layer move. A material that possesses high carrier mobility is (BTBT) moiety.10) Additionally, Ph-BTBT-10 can be handled in required for producing high-speed circuits. OFET devices are a solution processing such the spin-coting method, and possesses largely simple construction containing an organic semiconductor both good heat-resistance and film-forming properties. The Ph- layer, an insulating layer, and source-drain-gate electrodes. These BTBT-10 spin-coated devise exhibited not only outstanding OFET 2 components allow for the evaluation of fundamental transistor performance with ultra-high mobility (μmax = 14.7 cm /Vs), but also parameters including mobility, operation voltage, and driving comparable to oxide semiconductors (IGZO) with remarkable air- stability. stability. Source electrode Drain electrode Tetracene Pentacene [N0951] [P2524] S S (CH2)9CH3 S S Organic semiconductor layer DPh-BTBT DPh-BTBT-10 Gate electrode Gate insulator [D3526] [D5491] Top view One of the largest benefits of organic compounds for OFET’s is their immense structural variety. This variety can be used to control Source Drain the various properties they possess such as the electrical Organic semiconductor layer Channel performance, stability, and processing characteristics through the Insulator chemical modification of the molecular units. Within the organic Gate transistor research field, the possibilities for practical application Side view has dramatically improved by introducing new concepts and various materials proposals, including the unique OFET materials and the parent molecules used to create them. Due to the expanded π-conjugated system within organic semiconductor molecules, these often produce large intermolecular ● High Quality Organic Semiconductor interactions inducing an improvement in the mobility within OFET Materials (For Organic Electronics) 2 Please inquire for pricing and availability of listed products to our local sales representatives. Organic Transistor (OFET) Materials TCI offers “High Quality Organic Semiconductor Materials (For Specification Compound Product No. Mobility Si/SiO Substrate Organic Electronics)” specialized for electrical performance such Purity (%) 2 (cm2/Vs) Surface Condition as OFET mobility*. A material used in the active layer of an OFET Pentacene P2524 > 99.999 > 0.35 Bare device requires exceptionally high-purity to produce good OFET Ph-BTBT-10 D5491 > 99.5 > 10.0 ODTS function. However, it is difficult to analytically (HPLC, GC, etc.) P3HT P2513 Pd: < 100ppm > 0.10 OTS TIPS B5942 > 99.0 > 0.10 HMDS determine the purity at the ultra-high levels required for OFET Pentacene function. To surmount this quality assurance challenge, we have C70 F1233 > 99.0 > 0.30 HMDS [60]PCBM P2682 > 99.5 > 0.020 HMDS begun in-house fabrication of OFET devices using our OFET [70]PCBM P2683 > 99.0 > 0.015 HMDS materials. Once fabricated, we assess the functionality of the OFET as a quality assurance measure to confirm the electronic properties and device performance of the “High Quality Organic 1. An Example of OFET Evaluation 1: Semiconductor Materials (For Organic Electronics)”. We constantly Typical p-type Material "Pentacene" seek to improve our technology and skill in order to provide high- purity and quality materials our customers. Pentacene [P2524] (*The mobility refers to device evaluation measurements obtained within our facility (99.999%, trace metals basis) (purified by sublimation) under environment condition.) Results of the device test are fed buck to the synthesis and purication process Pentacene [P2524] High-purity OFET Product Purification Performance Supply Synthesis Test Pentacene, a simple polyaromatichydrocarbon, has been studied for its fundamental properties and applications in organic electronic research.11, 12) In particular, many research studies have been conducted to evaluate its potential as a carrier transporter within OFET devices.2,13) TCI provides two subliminally purified pentacene reagents: P2524 and P0030. P2524 (99.999% trace metal basis) is our high-quality grade reagent, which has additional 2 specifications for its OFET mobility: [> 0.35 cm /Vs (bare Si/SiO2)]. We inspect P2524 through the OFET evaluation process in every product lot. Only lots that pass this functional test are packed and shipped as “High Quality Organic Semiconductor Materials (For Organic Electronics)”. ● List of High Quality Organic 0.03 P2524 (99.999%) Semiconductor Materials P0030 (For Organic Electronics) 0.02 unsublimated S 1/2 (CH2)9CH3 /A D I S - 0.01 Pentacene Ph-BTBT-10 [P2524] [D5491] 0.00 (CH2)5CH3 CH3 CH3 CH3 CH3 CH3 CH3 0 -25 -50 -75 -100 Si C C C C Si CH3 CH3 VG / V S n CH3 CH3 CH3 CH3 P3HT Figure 1. Transfer curves of various grades of pentacene. [P2513] Mn: 36,000 ～ 45,000 TIPS Pentacene RR: > 99.0% [B5942] Table 1. OFET characteristics of the pentacenes. OCH3 Mobility Vth OCH3 Product No. Sample grade Substrate (cm2/Vs) (V) O O - Pentacene Si/SiO2 -4 -13 (non-sublimation) (bare) 5.3 × 10 Pentacene Si/SiO2 P0030 (purified by sublimation) (bare) 0.29 -22 Pentacene P2524 (99.999%, trace metals basis) Si/SiO2 0.39 -10 [60]PCBM [70]PCBM C70 (purified by sublimation) (bare) [P2682] [P2683] [F1233] Please inquire for pricing and availability of listed products to our local sales representatives. 3 Organic Transistor (OFET) Materials The performances of the pentacene-based OFET devices are Figure 3. Illustration for the device structure of pentacene-based OFET device. summarized in Table 1 and Figure 1. These devices were fabricated via vacuum deposition method on bare Si/SiO2 substrate without Self- Assembled Monolayer (SAM) treatment, the characteristics of which Pentacene [P2524] were measured under nitrogen conditions. Our sublimed pentacene [P2524] showed a large increase OFET performance compared to Surface Treatment that of the non-sublimed pentacene. As a result, (99.999% OTS [O0168] Top contact type P2524 Channel length: 50 μm trace metal basis) showed an excellent OFET performance with the Channel width: 1.5 mm Organic layer: 60 nm highest hole mobility of 0.39 cm2/Vs. In comparison to other Source, Drain : Au companies' sublimed pentacene samples, P2524 (99.999% trace (a) metal basis) possesses the highest drain current and the best OFET 0.01 0.06 V = -100 V potential (Figure 2 and Table 2). 0.001 D 0.05 0.0001 0.03 (- -5 0.04 I 1x10 D V = -100 V ) D 1/2 A / P2524 A / D -6 I 1x10 0.03 - Company A 1/2 1x10-7 Company B 0.02 0.02 Company C 1x10-8 1/2 0.01 1x10-9 / A D I - 1x10-10 0.01 20 0 -20 -40 -60 -80 -100 VG / V (b) 0.01 0.06 V = -100 V 0 0.001 D 25 0 -25 -50 -75 -100 0.05 VG / V 0.0001 (- -5 0.04 I 1x10 D ) Figure 2. Transfer curves of OFET devices using several 1/2 / A / A D -6 companies' pentacene.