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Arxiv:1811.07387V3 [Cond-Mat.Mes-Hall] 20 Aug 2020 Comparison

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Arxiv:1811.07387V3 [Cond-Mat.Mes-Hall] 20 Aug 2020 Comparison Linear Scaling Quantum Transport Methodologies Zheyong Fana,b,∗∗, Jose Hugo Garciac,∗∗, Aron W. Cummingsc,∗∗, Jose Eduardo Barrios-Vargasd, Michel Panhanse, Ari Harjub, Frank Ortmanne, Stephan Rochec,f,∗ aSchool of Mathematics and Physics, Bohai University, Jinzhou, China bQTF Centre of Excellence, Department of Applied Physics, Aalto University, FI-00076 Aalto, Finland cCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain dDepartamento de F´ısicay Qumica Te´orica,Facultad de Qu´ımica,UNAM, Mexico City 04510, Mexico eCenter for Advancing Electronics Dresden Technische Universit¨atDresden 01062 Dresden, Germany fICREA Instituci´oCatalana de Recerca i Estudis Avan¸cats,08010 Barcelona, Spain Abstract In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic models calls for the development of linear scaling, or order-N, numerical methods, which then become enabling tools for guiding experimental research and for supporting the interpretation of measurements. In this review, we describe and compare different order-N computational methods that have been developed during the past twenty years, and which have been used extensively to explore quantum transport phenomena in disordered media. We place particular focus on the zero-frequency electrical conductivities derived within the Kubo-Greenwood and Kubo-Streda formalisms, and illustrate the capabilities of these methods to tackle the quasi-ballistic, diffusive, and localization regimes of quantum transport in the noninteracting limit. The fundamental issue of computational cost versus accuracy of various proposed numerical schemes is addressed in depth. We then illustrate the usefulness of these methods with various examples of transport in disordered materials, such as polycrystalline and defected graphene models, 3D metals and Dirac semimetals, carbon nanotubes, and organic semiconductors. Finally, we extend the review to the study of spin dynamics and topological transport, for which efficient approaches for calculating charge, spin, and valley Hall conductivities are described. Keywords: Quantum Transport, 2D Materials, Numerical methods Contents 3.3 The time evolution operator and the regularized Green’s function . 12 1 Introduction 2 3.4 Evaluating the quantum projection operator . 14 3.4.1 The Lanczos recursion method . 14 2 Quantum linear response theory and Kubo formu- 3.4.2 The Fourier transform method . 15 las 4 3.4.3 The kernel polynomial method . 15 2.1 Quantum linear response theory and the many- body Kubo formula . 4 4 Landauer-Buttiker¨ quantum transport methodology 17 2.2 Kubo formulas for noninteracting electrons . 5 2.3 The dissipative conductivity . 6 5 Numerical examples 18 2.3.1 Kubo-Greenwood and Chester-Thellung 5.1 Formalisms to be compared . 18 formulas . 7 5.2 Ballistic regime . 19 2.3.2 Relation between conductivity and dif- 5.3 Diffusive regime . 20 fusion . 8 5.4 Weak localization regime . 21 2.3.3 Transport regimes and length scales . 8 5.5 Strong localization regime . 21 2.3.4 Time- and length-dependent conductivity 10 5.6 Convergence, computational cost, and method arXiv:1811.07387v3 [cond-mat.mes-hall] 20 Aug 2020 comparison . 22 3 Linear scaling numerical techniques 10 5.6.1 Convergence with the number of mo- 3.1 Evaluating the trace using a stochastic approach 11 ments . 22 3.2 Chebyshev polynomial expansion . 11 5.6.2 Convergence of the stochastic trace ap- proximation . 22 ∗Corresponding author 5.6.3 Disorder and convergence . 24 ∗∗Equal contribution 5.6.4 Spurious effects in the long-time limit . 24 Email address: [email protected] (Stephan Roche ) Preprint submitted to Elsevier August 21, 2020 5.6.5 Computational cost . 25 the structure and electronic properties of the material of inter- 5.6.6 Comparison of methods . 26 est. This can be achieved by using ab initio electronic struc- ture methods such as density functional theory (DFT) [1–4]. 6 Applications to dissipative transport in disordered DFT has proven to be highly successful for describing the elec- materials 26 tronic, optical, and vibrational properties of a large number of 6.1 Applications to disordered graphene . 26 materials. However, the computational cost of ab initio meth- 6.1.1 Anderson disorder . 26 ods severely limits the size of the systems that can be studied. 6.1.2 Charged impurities . 27 This limitation can be overcome with quasiparticle-based real- 6.1.3 Point-like defects . 29 space tight-binding (TB) models, for which the Hamiltonian de- 6.1.4 Large-scale structural defects . 30 scribing the electronic properties of the system becomes highly 6.2 3D metals and semimetals . 31 sparse, allowing for efficient numerical simulation. Therefore, 6.2.1 Electrical conductivity in liquid transi- using ab initio methods as a basis for the construction of ap- tion metals . 31 propriate TB models is currently the most successful approach 6.2.2 Localization transitions in disordered Dirac for describing electronic and transport properties of large-area, semimetals . 32 spatially complex disordered or nanostructured materials. 6.3 Quantum transport in nanotubes and crystalline The second ingredient needed to study large disordered sys- organic semiconductors with electron-phonon tems is an efficient numerical method for simulating electronic coupling . 33 transport. Ideally, to reach experimental length scales this method should be linear-scaling, i.e., its computational cost should be 7 Hall and spin transport 36 directly proportional to the number of atoms N. Such meth- 7.1 Topological and Fermi surface contributions . 36 ods are also called order-N or O(N) methods. The develop- 7.2 Numerical implementations of the Kubo-Bastin ment of stable O(N) algorithms for the calculation of spectral formula . 37 and transport quantities was initiated by the seminal works of 7.3 Quantum Hall effect . 38 Roger Haydock [5–7], who first derived a real-space approach 7.4 Quantum valley Hall effect . 39 to compute spectral functions in disordered materials using the 7.5 Spin transport physics . 39 so-called recursion and continued fraction expansion technique. 7.5.1 Spin relaxation time . 40 This was followed by the introduction of improved techniques 7.5.2 Spin Hall effect . 41 for the computation of density of states, correlation functions, 7.5.3 Quantum spin Hall effect . 42 and transport coefficients in disordered materials. Techniques employing orthogonal polynomials (such as Chebyshev expan- 8 Summary and conclusions 43 sion) [8–10] and the kernel polynomial method (KPM), have shown superior performance [11] and are experiencing grow- 1. Introduction ing popularity for studying the dynamics of quantum systems [12, 13]. Consequently, they find a considerable range of appli- The study and development of new materials and devices cations in chemistry and physics, including the fields of disor- often involves three complementary avenues of exploration – dered systems, electron-phonon interactions, quantum spin sys- experiments, theory, and numerical simulations. Theory pro- tems, and strongly correlated quantum systems [14–16]. vides a framework to explain or predict material or device be- A fully quantum treatment of charge transport is undoubt- havior, while numerical simulations are often needed to apply edly a great asset and marks a significant advance over simpler these theories to the complex situations that are encountered classical models. However, under the proper conditions elec- in experiments. In electronic devices, understanding the flow tronic transport can be treated classically, with electrons in a of electrons in response to an electric field is of central impor- material behaving as point particles that are scattered by various tance, and it is also a fundamental issue in condensed matter sources, such as lattice defects, impurities, or phonons, which physics. The performance of devices in many applications in can have qualitative similarities to the regime of Variable-Range electronics, thermoelectrics, spintronics, optoelectronics, and Hopping for disordered systems [17]. In this semiclassical pic- photovoltaics is intricately connected to the material’s electri- ture, the electrical conductivity is proportional to the momen- cal conductivity or charge carrier mobility. To this end, there tum relaxation time, σ / τp, which is the average time it takes is a need for simulation tools that can accurately describe elec- for scattering processes to randomize an electron’s direction tronic transport in complex materials and devices, and do so in of motion. The conductivity is also independent of the sys- an efficient manner in order to reach the length scales typically tem size in this regime. Each scattering process can be treated seen in experiments. fully quantum mechanically, but between scattering events the To study electronic transport in disordered materials and de- electrons behave as point particles. This semiclassical picture vices on experimental length scales, one often needs to consider is appropriate in the limit kFle 1, where le is the average large systems consisting of many millions or billions of atoms. distance between scattering events, kF = 2π/λF, and λF is the To simulate such systems accurately and efficiently, two basic Fermi wavelength of
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