www.estudentzone.com free I.E.S. Online (OBJ)-2003 GATE coaching www.egate.ws Online IES coaching for1 of free 15
ELECTRONICS & TELECOMMUNICATION ENGINEERING
PAPER-I
1. In a silicon crystal, the arrangement of b. 2 only atoms repeats periodicity. This type of c. 2 and 4 material is classified as d. 3 only a. Amorphous and non-crystalline 5. Consider the following statements for an b. Non-crystalline and epitaxial n-type semiconductor :
c. Epitaxial and single crystal 1. EF lies below ED at a room temperature d. Amorphous and single crystal (T).
2. A conductor carries a current of 4 A and if 2. EF lies above ED as T 0 magnitude second is of charge of an 3. E = E at some intermediate –19 F D electron e = 1.6 10 is Coulomb, then temperature the number of electrons which flow past 4. E is invariant with temperature. the cross-section per F –19 Where EF is Fermi energy and ED is donor a. 2.5 10 level energy. –19 b. 1.6 10 Which of these statements is/are correct ? –19 c. 6.4 10 a. 1 and 2 –19 d. 0.4 10 b. 2 and 3 3. The correct sequence of the following c. 1, 2 and 3 materials in the increasing order of d. 4 only conductivity is 6. Which of the following materials are a. Silicon doped with boron - Silver - piezoelectric ? Aluminium - Intrinsic silicon a. Mica and quartz b. Intrinsic silicon - Aluminium - Silver - Silicon doped with boron b. Mica, barium titanate and quartz c. Aluminium - Intrinsic silicon - Silicon c. Mica and diamond doped with boron - Silver d. Barium titanate and quartz d. Intrinsic silicon - Silicon doped with 7. The correct sequence of the following boron - Aluminium - Silver materials in the increasing order of 4. Consider the following statements for an magnetic susceptibility is n-type semiconductor : a. Diamagnetic - Ferromagnetic - 1. Donor level ionization decreases with Paramagnetic - Superconductor temperature b. Ferromagnetic - Paramagnetic - 2. Donor level ionization increases with Diamagnetic Superconductor temperature c. Paramagnetic - Diamagnetic - 3. Donor level ionization is independent Superconductor - Ferromagnetic of temperature d. Superconductor - Diamagnetic - Paramagnetic - Ferromagnetic 4. Donor level ionization increases as ED (donor energy level) moves towards 8. Match List I with List II and select the the conduction band at a given correct answer : temperature. List I (Dipole Characteristics) Which of these statements is/are correct ? A. All dipoles have equal magnitude but a. 1 only are randomly oriented for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for2 of free 15 B. 50% of the dipoles having equal b. Ultraviolet region magnitude are antiparallel to other c. Infra red region 50% (having equal but lower d. Microwave frequency region magnitude) 12. A resistance thermometer has a C. 50% of the dipoles are antiparallel to –3 temperature coefficients of resistance 10 other 50% but all have equal per degree and its resistance at 0°C is magnitude 1.0. At what temperature is its resistance D. All dipoles have equal magnitude but 1.1 ? have parallel alignment a. 10°C List II (Materials) b. 100°C 1. Ferri-magnetic c. 120°C 2. Anti-ferromagnetic d. –10°C 3. Ferro-magnetic 13. The diffusion capacitance of a. p-n 4. Para-magnetic junction diode A B C D a. increases exponentially with forward a. 1 4 2 3 bias voltage b. 4 1 3 2 b. Decreases exponentially with forward c. 1 4 3 2 bias voltage d. 4 1 2 3 c. Decreases linearly with forward bias 9. Under the influence of an external electric voltage field an insulator undergoes the process of d. Increases linearly with forward bias polarization. There are four contributing voltage factors to the total polarization viz. 14. The reverse current of a silicon diode is electronic. ionic, orientation and space a. Highly bias voltage sensitive charge At the optical frequencies, the only
contribution to total polarization is from b. Highly temperature sensitive a. Space charge polarization c. Both bias voltage and temperature sensitive b. Ionic polarization d. Independent of bias voltage and c. Orientation polarization temperature d. Electronic polarization 15. A combination of two diodes connected in 10. Consider the following statements : parallel when compared to a single diode A semiconductor to be used in can withstand optoelectronic devices should have a. Twice the value of peak inverse 1. direct energy band gap. voltage 2. indirect energy band gap. b. Twice the value of maximum forward 3. any value of forbidden energy band current gap. c. A larger leakage current 4. right value of band gap corresponding d. Twice the value of cut-in voltage 10 3 to light wavelength 16. Assume ni = 1.45 10 /cm for silicon. In Which of these statements is/are correct ? an n-type silicon sample, the donor 14 3 a. 1 only concentration at 300 K is 5 10 /cm and 8 b. 1 and 4 corresponds to 1 impurity atom for 10 silicon atoms. The electron and hole c. 2 and 3 concentrations in the sample will be d. 2 and 4 14 3 5 3 a. n = 5 10 /cm and p = 4.2 10 /cm 11. An LED made using GaAs emits radiation b. n < 5 1014/cm3 and p > 4.2 105/cm3 in 14 3 5 3 a. Visible region c. n > 5 10 /cm and p < 4.2 10 /cm d. n < 5 1014/cm3 and p < 4.2 105/cm3 for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for3 of free 15 17. The resistivity at room temperature of 2. Junction built-in potential. 3 intrinsic silicon is 2.3 10 m and that 3. Current through junction of en n-type extrinsic silicon sample is 4. Doping profile across the junction 8.33 10–2 m. A bar of this extrinsic Select the correct answer using the codes silicon sample is 3 mm long and has a given below : rectangular cross-section 50 100 mm and a steady current of 1 A exists in the bar. a. 1 and 2 The voltage across the bar is found to be b. 1 and 3 50 mV. If the same bar is of intrinsic c. 1, 2 and 4 silicon, the voltage across the bar will be d. 2, 3 and 4 about 22. The depletion region in a semiconductor p- a. 1400 V n junction diode has b. 140 V a. Electrons and holes c. 14 V b. Positive and negative ions on either d. 1.4V side 18. A semiconductor specimen of breadth d, c. Neither electrons nor ions width w and carrying current l is placed in d. No holes a magnetic field B to develop Hall voltage 23. When a junction diode is used in switching V in a direction perpendicular to l and B. H applications, the1orward recovery time is VH is NOT proportional to a. Of the order of the reverse recovery a. B time b. l b. Negligible in comparison to the reverse c. 1/w recovery time d. 1/d c. Greater than the reverse recovery time 19. In switching diode fabrication, a dopant is d. Equal to the mean carrier life time introduced into silicon which introduces for the excess minority carriers additional trap levels in the material 24. The Gunn diode is made from thereby reducing the mean life time of carriers. This dopant is a. Silicon a. Aluminium b. Germanium b. Platinum c. Gallium Arsenide c. Gold d. Selenium d. Copper 25. The internal resistance of a current source used in the. model of BJT while analyzing 20. The light emitting diode (LED) emits light a circuit using BJT is of a particular colour because a. Very high a. It is fabricated from a fluoroscent material b. Very low b. Transition between energy levels of the c. Zero carriers takes place while crossing the d. Of the order of a few mega-ohms p-n junction 26. For a BJT in common emitter mode, base c. Heat generated in the diode is to emitter capacitance (C) is ten times the converted into light collector to base capacitance (C). d. The band gap of the semi-conductor Transistor is biased at quiescent collector material used in the fabrication of the current ICQ = 1 mA and its short circuit diode is equal to the energy hv of the unity gain frequency is 0.909 M (rad/s). light photon What is the C Value ? 21. Depletion capacitance in a diode depends a. 6.45 nF on b. 44 nF 1. Applied junction voltage c. 40 nF for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for4 of free 15 d. 7.1 nF b. Greater than c by a few per cent Less 27. A bipolar junction transistor has a than c by a few per cent common base forward short circuit current c. Much greater than c, approaching the gain of 0.99. Its common emitter forward magnitude of C2 short circuit current gain will be 34. In an opto-electronic communication a. 50 system, the system component in which b. 99 free electrons are involved in its operation c. 100 is
d. 200 a. Laser b. Optical fibre 28. The scaling factor of an MOS device is . Using constant voltage scaling model, the c. Photo detector gate area of the device will be scaled as d. Coupling device employed with the a. 1/ optical fibre b. 1/2 35. c. 1/3 d. 1/4 29. A CMOS amplifier when compared to an N-channel MOSFET, has the advantage of
a. Higher cut-off frequency The v-i characteristic of an element is b. Higher voltage gain shown in the above figure. The element is c. Higher current gain a. Non-linear, active, non-bilateral d. Lower current drain from the power b. Linear, active, non-bilateral supply, thereby less dissipation c. Non-linear, passive, non-bilateral 30. In the forward blocking region of a silicon
controlled rectifier, the SCR is d. Non-linear, active, bilateral
a. In the off-state 36. The sum of two or more arbitrary sinusoids is b. In the on-state a. Always periodic c. Reverse biased b. Periodic under certain conditions d. At the point of breakdown c. Never periodic 31. In fabricating silicon BJT in ICs by the d. Periodic only if all the sinusoids are expitaxial process, the number of diffusions used is usually identical in frequency and phase
a. 2 37. The average value of the full-wave rectified sine wave with period , and a b. 3 peak value of Vm is c. 4 a. 0.707 Vm d. 6 b. 0.500 Vm 32. In the fabrication of n-p-n transistor in an c. 0.637 V IC, the buried layer on the p-type substrate m is d. 0.318 Vm a. P+-doped 38. Match List I with List II and select the correct answer: b. n+-doped List I c. Used to reduce the parasitic capacitance A. Free and Forced response d. Located in the emitter region B. Z-transforms 33. Velocity of light travelling in an optical C. Probability theory fibre is D. Fourier series a. Equal to c List II for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for5 of free 15 1. Discrete time systems 1 0 2. Dirichlet conditions xt11() L xt() 1 ut() 3. Non-homogeneous differential xt22() 1 xt() 0 c. 0 equation C 4. Random processes xt1() A B C D yt() 1 0 xt2 () a. 1 3 2 4 b. 3 1 2 4 1 0 xt11() L xt() 0 c. 1 3 4 2 ut() xt22() 1 xt() 1 d. 3 1 4 2 d. 0 C 39. The relationship between the input x(t) and the output y(t) of a system is xt1() yt() 1 0 22 dy dx xt2 () xt(2)(2) ut dt 22dt 41. With the conventional notation X = AX + The transfer function of the system is BU for the state description of a linear time-invariant network, examine the s2 a. 1 validity of the following statements e2s relating to the matrix A: e2s 1. A is symmetrical if the network is b. 1 s2 reciprocal. 2s 2. The sum of the natural frequencies of e c. 1 2 the network is equal to the determinant s of A. s2 d. 1 Which of these statements is/are true ? e2s a. Both 1 and 2 40. b. 1 only c. 2 only d. Neither 1 nor 2 42. Which one of the following is NOT a correct statement about the state-space model of a physical system ? a. State-space model can be obtained Which one of the following is the state- only for a linear system space model of the circuit shown above? b. Eigen values of the system represent 1 the roots of the characteristic equation 0 0 xt11() L xt() c. X = AX + Bu represents linear state- ut() 1 space model of a physical system xt22() 1 xt() a. 0 C C d. X(t) represents the state vector of the system xt1() yt() 0 1 43. Match List I (Nature of Periodic Function) xt() 2 with List II (Properties of Spectrum 01 Function) and select the correct answer : xt() xt() 0 11 ut() List I 11 xt22() xt() 1 b. CL
xt1() A. Impulse train yt() 0 1 xt2 () B. Full-wave rectified sine function C. Sin 2t/6 cos 2t/6 for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for6 of free 15 c. 1/s [e–s + e–2s + 2e–3s] d. 1/s [e–s + e–2s – 2e–3s] D. 48. Match List I (F(s)) with List II (f(t)) and List II select the correct answer: 1. Only even harmonics are present List I 10 2. Impulse train with strength l/T A. 3. 3 = 1/2j ; –3 = – 1/2j ; ss( 10) 10 1 = –1/2j ; –1 = 1/2j B. 4. Only odd harmonics are present (100)s2 5. Both even and odd harmonics are s 10 C. present (s 10)2 100 A B C D D. 10 a. 5 2 3 4 List II b. 2 1 4 3 1. 10 (t). c. 5 2 4 3 2. (e–10t cos 10 t) . u(t) d. 2 1 3 4 3. (sin 10 t) . u(t) 44. The covariance function of a band limited –10t white noise is 4. (1 – e ) . u(t) a. A Dirac delta function A B C D b. An exponentially decreasing function a. 3 4 1 2 c. A sinc function b. 4 3 1 2 d. A sinc2 function c. 3 4 2 1 d. 4 3 2 1 45. The inverse Fourier transform of (f) is a. u(t) 49. The Laplace transform of sin t is b. 1 s a. 22 c. (t) s j2t 2 d. e b. s22 27s 97 46. If 2 is the Laplace transform of 2 s 33s s c. 22 f(t), then f(0+) is s a. Zero d. b. 97/33 s22 c. 27 50. Given, £ f(t) = Fs() fte ()st . dt which 0 d. infinity of the following expressions are correct? 47. 1. £ f ()()tauta Fse ()sa dF() s 2. £tf() t ds 3. £ ()()taft asFs () df() t 4. £ sF() s f (0) dt The Laplace transform of the waveform Select the correct answer using the codes shown in the above figure is given below: a. 1/s [es + e2s + 2e3s] a. 1, 2 and 3 b. 1/s [es + e2s + 2e–3s] b. 1, 2 and 4 for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for7 of free 15 c. 2, 3 and 4 nn(1) b. d. 1, 3 and 4 2
51. Two rectangular waveforms of duration T1 c. n and T2 seconds are convolved. What is the d. n–1 shape of the resulting waveform? 56. a. Triangular b. Rectangular c. Trapezoidal d. Semi-circular 52. A discrete LTI system is non-causal if its impulse response is In the above circuit, if |l1| = |l2| = 10 A n –1 a. a u(n – 2) a. l1 will lead by tan 8/6, l2 will lag by –1 b. an–2 u(n) tan 8/6 –1 n+2 b. l1 will lead by tan 6/8, l2 will lag by c. a u(n) –1 n tan 6/8 d. a u(n + 2) –1 c. l1 will lead by tan 8/6, l2 will lag by 53. tan–1 8/6 –1 d. l1 will lead by tan 6/8, l2 will lag by tan–1 6/8 57. A two port network is reciprocal, if and only if a. Z = Z 11 22 In the circuit shown above, the voltage b. BC – AD = – 1 across 2 resistor is 20 V. The 5 resistor c. Y12 = – Y21 connected between the terminals A and B d. h12 = h21 can be replaced by an ideal 58. a. Voltage source of 25 V with + terminal upward b. Voltage source of 25 V with + terminal downward c. Current source of 2 A upward
d. Current source of 2 A downward In the circuit shown above, the switch is 54. closed at. t = 0. The current through the capacitor will decrease exponentially with a time constant a. 0.5 s b. 1 s c. 2 s The current flowing through the voltage d. 10 s source in the above circuit is 59. a. 1.0 A b. 0.75 A c. 0.5 A d. 0.25 A 55. The number of edges in a compete graph of n vertices is a. n(n – 1) for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for8 of free 15 In the circuit shown above, the switch is c. 4 – 3 – 1 – 2 moved from position A to B at time t = 0. d. 4 – 3 – 2 – 1 The current i through the inductor satisfies 62. the following conditions 1. i(0) = –8A 2. di/dt (t = 0) = 3A/s 3. I() = 4A The value of R is a. 0.5 ohm An iron-cored choke of large inductance is connected to a d.c. supply as shown in the b. 2.0 ohm above circuit. A capacitor C is also c. 4.0 ohm connected across the switch. The role of C d. 12 ohm is to 60. In a circuit the voltage across an element is a. Improve the power factor of the circuit –100t v(t) = 10(t – 0.01 )e V. The circuit is b. Minimize the current drawn from a. Undamped supply b. Under damped c. Prevent the arcing across switching c. Critically damped under switching conditions d. Over damped d. Increase the magnetic flux in the core 61. 63. Bartlett’s bisection theorem holds for 1. which one of the following terminal networks? a. Reciprocal network b. Balanced network c. Symmetric network 2. d. Non-linear network 64. Match List I with List II and select the correct answer: List I A. Internal impedance of an. ideal current source is
3. B. For attenuated natural oscillations, the poles of the transfer function must lie on the C. A battery with an e.m.f. E and internal resistance R delivers current to a load RL. Maximum power transferred is
D. The roots of the characteristic equation 4. give List II 1. Forced response of the circuit 2. Natural response of the circuit 3. E2/4R
4. E2/2R The correct sequence of the time constants of the circuits shown above in the 5. Left hand part of the complex increasing order is frequency plane a. 1 – 2 – 3 – 4 6. Right hand part of the complex frequency plane b. 4 – 1 – 2 – 3 for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching for9 of free 15 7. Infinite b. 3 4 2 1 8. Zero. c. 4 3 2 1 A B C D d. 3 4 1 2 a. 7 6 3 1 68. An electric charge Q is placed in a b. 8 5 4 2 dielectric medium. Which of the following quantities are independent of the dielectric c. 8 6 4 1 constant of the medium ? d. 7 5 3 2 a. Electric potential V and Electric field 65. intensity E b. Displacement density D and Displacement c. Electric field intensity E and Displacement density D d. Electric potential V and Displacement In Maxwell bridge as shown above, the 69. Two coaxial cylindrical sheets of charge value of C and its shunting resistance R1 2 are present in free space, s = 5 C/m at r = are unknown. The bridge balance relations 2 2 m and s = – 2 C/m at r = 4 m. The are Z1/Z3 = Z2/Z4. The values of C and R1 are displacement flux density D at r = 3 m is 2 a. C = L/R2R3, R1 = R2R3/R4 a. D5a r Cm / 2 b. C = L/R3R4, R1 = R4/R2R3 b. D2/3a r Cm /
c. C = LR2/R3, R1 = R3/R2R4 2 c. D10/3a r Cm / d. C = LR3/R2, R1 = R3/R2R4 2 d. D18/3a r Cm / 66. In the pass-band of a symmetric lattice filter, the nature of X and X , where X 70. Two thin parallel wires are carrying A B A current along the same direction. The force and XB represent the reactances of the series, arm and the diagonal arm of the experienced by one due to the other is lattice is of a. Parallel to the lines a. The same sign b. Perpendicular to the lines and b. The opposite sign attractive c. The same sign and equal magnitude c. Perpendicular to the lines and repulsive d. Of arbitrary sign d. Zero 67. Match List I (Quantities) with List II 71. An electric potential field is produced in (Units) and select the correct answer : air by point charges 1 C and 4 C located at (–2, 1, 5) and (1, 3, –1) respectively. List I The energy stored in the field is A. R/L a. 2.57 mJ B. 1/ LC b. 5.14 mJ C. CR c. 10.28 mJ D. L/C d. 12.50 mJ List II 72. Which one of the following potentials does 1. Second NOT satisfy Laplace’s Equation ? 2. Ohm a. V = 10 xy 3. (Radian/Second)2 b. V = r cos 4. (Second)–1 c. V = 10/r A B C D d. V = cos + 10 a. 4 3 1 2 73. Laplacian of a scalar function V is for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching 10for of free 15 a. Gradient of V characteristic impedance 1 is incident b. Divergence of V normally on its boundary with another c. Gradient of the gradient of V perfect dielectric medium of characteristic impedance . The electric and magnetic d. Divergence of the gradient of V 2 field strengths of the incident wave are 74. Match List I (Dominant Mode of denoted. by Ei and Hi respectively whereas Propagation) with List II (Type of Er and Hr denote these quantities for the Transmission Structure) and select the reflected wave, and Et and Ht for the correct answer: transmitted wave. List I Which of the following relations are A. Coaxial line correct ?
B. Rectangular waveguide 1. Ei = 1Hi
C. Microstrip line 2. Er = 1Hr
D. Coplanar waveguide 3. Et = 2Ht List II Select the correct answer using the codes 1. TE given below: 2. Quasi TEM a. 1, 2 and 3 3. Hybrid b. 1 and 2 4. TEM c. 1 and 3 A B C D d. 2 and 3 a. 1 4 2 3 79. A plane electromagnetic wave travelling in b. 4 1 3 2 a perfect dielectric medium of dielectric c. 1 4 3 2 constant 1 is incident on its boundary with another perfect dielectric medium of d. 4 1 2 3 dielectric constant 2. The incident ray 75. In a line the VSWR of a load is 6 dB. The makes an angle of 1 with the normal to reflection coefficient Will be the boundary surface. The ray transmitted a. 0.033 into the other medium makes an angle of b. 0:33 2 with the normal. If 1 = 21 and 1 = 0 c. 0.66 60 , which one of the following is correct? 0 d. 3.3 a. 2 = 45 –1 76. ZL = 200 and it is desired that Zi = 50. b. 2 = sin 0.433 –1 The quarterwave transformer should have c. 2 = sin 0.612 a characteristic impedance of d. There will be no transmitted wave a. 100 80. In a. four element Yagi-Uda antenna b. 40 a. There is one driven element, one c. 10,000 director and two reflectors d. 4 b. There is one driven element, two 77. A TEM wave impinges obliquely on a directors and one reflector dielectric- dielectric boundary ( r1 = 2, c. There are two driven elements, one r2 = 1). The angle of incidence for total director and two reflectors reflection is d. All the four elements are driven a. 30° elements b. 45° 81. Which one of the following Maxwell’s c. 60° equations gives the basic idea of radiation? d. 75° HDt/ a. 78. A plane electromagnetic wave travelling in EBt/ a perfect dielectric medium of for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching 11for of free 15 EBt / stored in the capacitor before and after b. immersion, respectively is .D 0 a. 500 10–4 Joules and 250 10–4 Joules .D –4 –4 c. b. 250 10 Joules and 500 10 Joules .0B c. 625 10–4 Joules and 250 10–4 Joules .B 0 –4 –4 d. d. 250 10 Joules and 625 10 Joules HDt (/) 86. 82. For TE or TM modes of propagation in bounded media, the phase velocity a. Is independent of frequency b. Is a linear function of frequency c. Is a non-linear function of frequency d. Can be frequency-dependent or frequency independent depending on the source Consider the following data for the circuit 83. A waveguide operated below cut-off shown above : frequency can be used as Ammeter : Resistance 0.2 Reading 5.0A a. A phase shifter Voltmeter : Resistance 2k Reading 200V b. An attenuator Wattmeter : Current coil resistance 0.2 , c. An isolator Pressure coil resistance 2 k d. None of the above Load : Power factor = 1 84. Match List I (Nature of Polarization) with The reading of the Wattmeter is List II (Relationship Between X and Y a. 980 W Components) for a propagating wave having cross-section in the XY plane and b. 1000 W propagating along Z-direction and select c. 1005 W the correct answer : d. 1010 W List I 87. Force developed by an electromagnet is A. Linear given as B. Left circular F = aBbAc C. Right circular where = permeability of air in the gap D. Elliptical B = flux density in the air gap List II A = cross-sectional area of the gap 1. X and Y components are in same phase Then a, the values of b and c are 2. X and Y components have arbitrary respectively phase difference a. 1, 1 and 2 3. X component leads Y by 900 b. –1, 1 and –2 4. X component lags behind Y by 90° c. 1, 2 and –1 A B C D d. –1, 2 and 1 a. 1 4 2 3 88. b. 4 1 2 3 c. 1 4 3 2 d. 4 1 3 2 85. An air condenser of capacitance of 0.005 F is connected to a d.c. supply of 500 Volts, disconnected and then immersed in oil with a dielectric constant of 2.5. Energy for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching 12for of free 15 Consider the circuit as shown above. Z1 is For the Owen-bridge circuit shown above, an unknown impedance and measured as when balanced, the values of L and R are
Z1 = (Z2Z3)/Z4. The uncertainties in the a. L = CSRS / R1, R = RSCS/C1 value of Z2, Z3 and Z4 are ±1%, ±1% and b. L = C R R , R = R C /C ±3% respectively. The overall uncertainty S S 1 S S 1 c. L = C1RSR1, R = RSCSC1 in the measured value of Z1 is d. L = C /C R R , R = R C /C a. 11% S 1 S 1 1 S 1 94. Match List I with List II and select the b. ± 4% correct answer: c. ±5% List I (Instrument) d. 5% A. Vibration Galvanometer 89. The measured value of a capacitor is B. Head phone 100F. The true value of the capacitor is C. D’Arsonval Galvanometer 110F. The percentage relative error is D. C.R.C. a. 9.99% List II (Frequency) b. 9.09% 1. 100 Hz c. 10.0% 2. Zero Hz d. 4.76% 3. 1 kHz 90. The X and Y inputs to a CRC are 4. Large frequency range respectively 10 cos (100 t + ) and 10 sin A B C D (100 t + ). The resulting Lissajous pattern is a. 2 3 1 4 a. A straight line inclined at an angle b. 1 4 2 3 b. A horizontal line c. 2 4 1 3 c. An ellipse with axis making an angle d. 1 3 2 4 d. A circle 95. Consider the following statements : 91. For the measurement of the voltage of the 1. A variable capacitance type transducer, order of mV, the voltmeter used is gives an output proportional to acceleration a. Rectifier-amplifier type VTVM 2. LVDT is a self-governing type of b. Amplifier-rectifier type VTVM. transducer. c. Diode peak reading voltmeter 3. Eddy current type of transducer gives d. Slide wire VTVM an output proportional to velocity 92. Wagner’s earthing device is used in a.c. 4. A piezoelectric transducer cannot be bridges for eliminating the effect of used to measure static variables a. Stray electrostatic field Which of these statements is/are correct ? b. Intercomponent capacitances a. 1 and 2 c. Earth capacitance b. 1, 2 and 3 d. All the above three c. 2 and 4 93. d. 4 only 96. A temperature between –200°C and 1000°C may be measured conveniently by a. Thermistor b. Resistance thermometer c. Optical pyrometer d. Copper-constantan thermocouple 97. A hot-wire anemometer is a device used to measure for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching 13for of free 15 a. Gas velocities where is the electrical conductivity and b. Pressure in gases T is the temperature. c. Liquid discharge Which of these statements is/are correct ? d. Temperature a. 1 and 2 98. Very small displacements are effectively b. 1 and 3 measured using c. 1, 2 and 3 a. LVDT d. 4 only b. Strain gauge 103. Even though carbon is in the IV group of c. Thermistor the Periodic Table, it is not used as a d. Tachogenerator semiconductor because it has 99. Experiments conducted With ultraviolet a. High dielectric constant light of wavelength 1.800 10–5 cm show b. Large energy gap > 5 eV that electrons of maximum energy 1.51 eV c. Low temperature coefficient are ejected from a certain metal. If d. Low thermal conductivity –27 Planck’s constant is 6.62 10 erg.sec., 104. Harmonic distortion analyser is an the photoelectric threshold of the metal is instrument used to about a. Measure the amplitude of each a. 3.4 eV harmonic component individually b. 4.8 eV b. Measure the r.m.s. value of amplitudes c. 5.4 eV of all harmonics simultaneously d. 5.0 eV c. Measure the signal levels of each 100. In a PCM system of telemetry, the harmonic of an unknown waveform quantization noise depends on d. Display the value of amplitude of each a. The sampling rate and quantization harmonic on the C.R.O. screen levels 105. b. The sampling rate only c. The number of quantization levels only d. Information provided is not sufficient 101. The bandwidth requirement of an FM telemetry channel is a. Smaller than that of an AM telemetry channel
b. Equal to that of an AM telemetry In the bridge circuit shown above, at channel balance condition, the value of Cs = 0.5 F c. About ten times that of an AM and Rs = 1000 . The values of inductance telemetry channel Lx and resistance Rx are d. About 100 times that of an AM a. Lx = 0.5 H, Rx = 1000 telemetry channel b. Lx = 0.25 H, Rx = 2000 102. Consider the following statements : c. L = 0.5 H, R = 3000 In a metal x x d. L = 0.25 H, R = 500 1. d/dT is positive at very low x x temperatures. 106. Assertion (A) : Every material has a different value of energy band gap except 2. d/dT is negative at very high metals which have no band gap. temperatures. Reason (R) : The energy band gap is 3. d/dt 0 at some intermediate decided by the equilibrium lattice constant temperatures. which is different in different materials. 4. is independent of temperature for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching 14for of free 15 a. Both A and R are individually true and 110. Assertion (A) : A periodic function R is the correct explanation of A satisfying Dirichlet conditions can be b. Both A and R are individually true but expanded into Fourier series. R is not the correct explanation of A Reason (R) : A periodic function can be
c. A is true but R is false a0 reconstructed from antn cos 0 d. A is false but R is true 2 n1
107. Assertion (A) : The conductivity of a bntn sin 0 for very lage n, excluding semiconductor is decided by the level of n1 its doping and is almost independent of its infinity. band gap value irrespective of a. Both A and R are individually true and temperature. R is the correct explanation of A Reason (R) : The carrier concentration due b. Both A and R are individually true but to doping is independent of temperature, if R is not the correct explanation of A it is not too low. c. A is true but R is false a. Both A and R are individually true and d. A is false but R is true R is the correct explanation of A 111. Assertion (A) : In the exponential Fourier b. Both A and R are individually true but representation of a real-valued periodic R is not the correct explanation of A function f(t) of frequency f0, the c. A is true but R is false coefficients of the terms e jnft2 0 and d. A is false but R is true e jnft2 0 are negatives of each other. 108. Assertion (A) : In a transistor the thickness Reason (R) : The discrete magnitude of the base region is kept as small as spectrum of f(t) is even and the phase possible. spectrum is odd. Reason (R) : By keeping the base a. Both A and R are individually true and thickness small, a large electric field is R is the correct explanation of A produced between the emitter and the b. Both A and R are individually true but collector which makes the transistor fast- R is not the correct explanation of A acting. c. A is true but R is false a. Both A and R are individually true and d. A is false but R is true R is the correct explanation of A 112. Assertion (A) : Kirchoff’s voltage law b. Both A and R are individually true but states that in a closed path in a network, R is not the correct explanation of A the algebraic sum of all voltages in a c. A is true but R is false single direction is zero. d. A is false but R is true Reason (R) : Law of conservation of 109. Assertion (A) : A drift transistor exhibits charge is the basis of this law. better high-frequency response as a. Both A and R are individually true and compared to a diffusion transistor, when R is the correct explanation of A both the transistors have identical base, b. Both A and R are individually true but collector and emitter geometries. R is not the correct explanation of A Reason (R) : The transport of minority c. A is true but R is false carriers in the base region of a drift transistor is by the drift process, whereas d. A is false but R is true that in a diffusion transistor is by the 113. Assertion (A) : Superposition theorem is diffusion process. used to particular branch in a linear a. Both A and R are individually true and network calculate the current in a of each R is the correct explanation of A of the independent sources, by considering the effect taken one-at a time. b. Both A and R are individually true but R is not the correct explanation of A Reason (R) : In a linear network, the behaviour of the circuit does not vary c. A is true but R is false depending upon the source. d. A is false but R is true for video lectures www.satishkashyap.com not available in NPTEL www.estudentzone.com free Online GATE coaching www.egate.ws Online IES coaching 15for of free 15 a. Both A and R are individually true and Reason (R) : The larger the effective area R is the correct explanation of A of an antenna, the sharper is the radiated b. Both A and R are individually true but beam. R is not the correct explanation of A a. Both A and R are individually true and c. A is true but R is false R is the correct explanation of A d. A is false but R is true b. Both A and R are individually true but 114. Assertion (A) : Maximum power transfer R is not the correct explanation of A from a source with complex internal c. A is true but R is false impedance to a complex load will occur if d. A is false but R is true the source impedance is same as the load 118. Assertion (A) : The quality factor Q of a impedance. waveguide is closely related to its Reason (R) : The efficiency of maximum attenuation factor . power transfer cannot exceed 50%. Reason (R) : Normally attenuation factors a. Both A and R are individually true and obtainable in waveguides are much higher R is the correct explanation of A than those obtainable in transmission lines. b. Both A and R are individually true but a. Both A and R are individually true and R is not the correct explanation of A R is the correct explanation of A c. A is true but R is false b. Both A and R are individually true but d. A is false but R is true R is not the correct explanation of A 115. Assertion (A) : The current in a series R- c. A is true but R is false L-C circuit driven by a sinusoidal voltage d. A is false but R is true source may lead, lag or be in phase with 119. Assertion (A) : A VTVM is preferred to an the applied voltage. ordinary multimeter for measurement of Reason (R) : Series resonance does not voltages in an electronic circuit. imply unity power factor condition. Reason (R) : A VTVM has built-in a. Both A and R are individually true and amplifier and it gives very accurate results. R is the correct explanation of A a. Both A and R are individually true and b. Both A and R are individually true but R is the correct explanation of A R is not the correct explanation of A b. Both A and R are individually true but c. A is true but R is false R is not the correct explanation of A d. A is false but R is true c. A is true but R is false 116. Assertion (A) : A two-terminal network d. A is false but R is true representing a given driving point 120. Assertion (A) : Operational amplifiers are reactance function is said to be a canonic commonly used in instrumentation. or a fundamental network. Reason (R) : The operational amplifiers do Reason (R) : A driving point reactance not load the circuit due to their very high function is totally specified by the location input impedance. of poles and zeros. a. Both A and R are individually true and a. Both A and R are individually true and R is the correct explanation of A R is the correct explanation of A b. Both A and R are individually true but b. Both A and R are individually true but R is not the correct explanation of A R is not the correct explanation of A c. A is true but R is false c. A is true but R is false d. A is false but R is true d. A is false but R is true 117. Assertion (A) : For extremely high frequency ranges or above, compared to linear antennas, aperture antennas are more useful. for video lectures www.satishkashyap.com not available in NPTEL