CSICS) October 16–19, on Hawaii’S Big Island Society News

JULY 2011 VOL. 18, NO. 3 ISSN: 1074 1879 EDITOR-IN-CHIEF: NINOSLAV D. STOJADINOVIC

TABLE OF CONTENTS 2011 IEEE COMPOUND Your Comments Solicited ...... 1 SEMICONDUCTOR IC SYMPOSIUM Upcoming Technical Meetings ...... 3 (CSICS) October 16–19, on Hawaii’s Big Island Society News ...... 5

Regional and Chapter News ...... 26

EDS Meetings Calendar ...... 34

YOUR COMMENTS SOLICITED

Dear IEEE EDS Newsletter reader:

In an attempt to reach out to our global readership and ini- tiate a dialog, we are launch- Photo courtesy of the Hilton Waikoloa Village Photo courtesyWaikoloa of the Hilton ing a “Letters to the Editor” section in the Newsletter. This We cordially invite you to the 2011 IEEE Compound Semiconduc- will be a forum to communi- tor IC Symposium (CSICS) being held October 16–19, at the Hilton cate on topics primarily of Waikoloa Village located on Hawaii’s Big Island. general interest related to the Over the last 33 years the Symposium has been CS Renuka P. Jindal Electron Devices Society in and continues to be the preeminent international EDS President particular and IEEE in general, forum in which advances in semiconductor circuit addressing issues that are on and device technology are presented, debated, your mind. Please make use of this opportunity. and discussed. The scope of the Symposium en- S y m We look forward to hearing from you. compasses devices and circuits in GaAs, SiGe, InP, m posiu Thank you. GaN, and InSb as well as RF/mm-wave and high- speed digital CMOS to provide a truly comprehen- Renuka P. Jindal sive conference. This is the ideal forum for presentation of the latest President results in microwave/mm-wave, high-speed digital, analog, mixed IEEE Electron Devices Society mode, optoelectronic integrated circuits, and power conversion. The 2011 CSIC Symposium is comprised of a full 3-day technical program, 2 short courses, a primer course, and a technology exhibition. The technical program consists of approximately 60 high (continued on page 4)

YOUR COMMENTS SOLICITED Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected] ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF

President Vice-President of Conferences Editor-In-Chief Renuka P. Jindal Bin Zhao Ninoslav D. Stojadinovic University of Louisiana at Lafayette Freescale Semiconductor University of Nis E-mail: [email protected] E-mail: [email protected] E-mail: [email protected]

President-Elect Vice-President of Membership Paul K.L. Yu Albert Z.H. Wang REGIONS 1-6, 7 & 9 Scandinavia & Central Europe Univ. of California at San Diego University of California, Riverside Eastern, Northeastern & South- Zygmunt Ciota E-mail: [email protected] E-mail: [email protected] eastern USA (Regions 1, 2 & 3) Technical University of Lodz Fernando Guarin E-mail: [email protected] Treasurer Vice-President of Publications IBM Microelectronics Stephen A. Parke Samar Saha E-mail: [email protected] UK, Middle East & Africa Northwest Nazarene University Univ. of Colorado at Colorado Springs Zhirun Hu E-mail: [email protected] E-mail: [email protected] Central USA & Canada University of Manchester (Regions 4 & 7) E-mail: [email protected] Secretary Vice-President Peyman Servati James L. Merz of Regions/Chapters University of British Columbia Western Europe University of Notre Dame Juin J. Liou E-mail: [email protected] Jan Vobecky E-mail: [email protected] University of Central Florida Abb Switzerland Ltd. E-mail: [email protected] Southwestern & Western USA E-mail: [email protected] Jr. Past President (Regions 5 & 6) Cor L. Claeys Vice-President Adam M. Conway IMEC of Technical Activities REGION 10 Lawrence Livermore Nat. Lab. E-mail: [email protected] Joachim N. Burghartz Australia, New Zealand E-mail: [email protected] IMS Chips & South Asia Sr. Past President E-mail: [email protected] M.K. Radhakrishnan Latin America (Region 9) Ilesanmi Adesida NanoRel Francisco J. Garcia Sanchez University of Illinois IEEE Newsletters E-mail: [email protected] University Simon Bolivar E-mail: [email protected] Theresa Smith E-mail: [email protected] IEEE Operations Center Northeast Asia Vice-President of Awards E-mail: [email protected] Kazuo Tsutsui Marvin H. White REGION 8 Tokyo Institute of Technology Ohio State University Executive Director Eastern Europe & the former E-mail: [email protected] E-mail: [email protected] Christopher Jannuzzi Soviet Union IEEE Operations Center Tomislav Suligoj East Asia Vice-President E-mail: [email protected] University of Zagreb Mansun J. Chan of Educational Activities E-mail: [email protected] Hong Kong Univ. of Sc. & Tech. Meyya Meyyappan Business Coordinator E-mail: [email protected] NASA Ames Research Center Joyce Lombardini E-mail: [email protected] IEEE Operations Center E-mail: [email protected]

IEEE prohibits discrimination, harassment, and bullying. For more information, visit http://www.ieee.org/ ONTRIBUTIONS ELCOME web/aboutus/whatis/policies/p9-26.html. C W Readers are encouraged to submit news items concerning the Society and its members. Please send your ideas/articles directly to either the Editor- in-Chief or appropriate Editor. The e-mail addresses of these individuals EDS AdCom are listed on this page. Whenever possible, e-mail is the preferred form of Elected Members-at-Large submission. Elected for a three-year term (maximum two terms) with ‘full’ voting privileges NEWSLETTER DEADLINES

2011 TERM 2012 TERM 2013 TERM ISSUE DUE DATE

G. Baccarani (2) R. Huang (2) Arturo Escobosa (1) January October 1st M.J. Deen (2) S.S. Iyer (1) Juin Liou (1) April January 1st S. Deleonibus (1) M. Meyyappan (1) Mikael Ostling (1) July April 1st F. Guarin (1) H.S. Momose (2) M.K. Radhakrishnan (1) October July 1st S. Saha (1) A. Nathan (1) Ravi Todi (2) H. Shang (2) M. Shur (1) Albert Wang (1) The EDS Newsletter archive can be found on the Society web site at J.W. Swart (2) B. Zhao (1) Xing Zhou (1) https://www.ieee.org/portal/pages/society/eds/pubs/newsletters/ P.K.L. Yu (1) newsletter.html. The archive contains issues from July 1994 to the present.

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08854.

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2 IEEE Electron Devices Society Newsletter ❍ July 2011 U PCOMING T ECHNICAL M EETINGS

2011 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW)

The 2011 IEEE International Inte- as in room phones and television grated Reliability Workshop (IIRW), sets, and the format of the techni- sponsored by the IEEE Reliability cal program encourage extensive Society and the IEEE Electron Devic- interaction among the workshop at- es Society, will be held at the Stan- tendees. You feel yourself drawn into ford Sierra Conference Center on technical discussions from the start. the shores of Fallen Leaf Lake near Nestled throughout the pines and South Lake Tahoe, California, Octo- cedars along the shoreline of Fallen ber 16–20, 2011. This workshop pro- Leaf Lake, attendees stay in cabins vides a unique forum for open and furnished in the rustic style of an frank discussions of all areas of reli- alpine resort. All rooms have decks ability research and technology for with magnificent views of Fallen present and future semiconductor Leaf Lake and the surrounding Sierra applications. peaks. Comfortable, informal dress Hot reliability topics include: is encouraged, affiliations are down- transistor reliability including hot played, and meals are provided fam- carriers and NBTI/PBTI, high-k and ily-style in the lodge dining room. nitrided SiO2 dielectrics, SiGe and This peaceful setting, free from the strained Si, III-V, SOI, novel de- distractions of modern life, presents Photography Fox Vance The main lodge at the Stanford Sierra Confer- vice reliability, organic electronics, a terrific opportunity to get to know ence Center. The center provides lodging, emerging memory technologies your colleagues, including interna- meals and meeting facilities as well as and future “nano” technologies, Cu tionally renowned experts. This is excellent recreation including hiking in the interconnects and low-k dielectrics, an opportunity not usually available Desolation Wilderness and boating on Fallen product reliability and burn-in, im- at larger, more hectic conferences. Leaf Lake. pact of transistor degradation on Instead of watching TV, participants circuit reliability, reliability modeling spend their evenings at informal and simulation, optoelectronics, sin- poster sessions, discussion groups, lection of Tutorials, presented by gle event upsets, NEMS/MEMS, and and special interest groups, all with leading experts and included at no photovoltaics. The complete Call for refreshments and snacks provided additional cost. This year the tuto- Papers can be found at www.iirw. to stimulate discussions. At the end rials are jointly organized by Tibor org. Please submit abstracts to the of the day, attendees are free to relax Grasser, TU Wien and Jim Lloyd, Technical Program Chair, Andrew in front of a roaring fireplace in the SUNY Albany and cover diverse Turner, IBM ([email protected]) rustic Old Lodge. reliability issues related to NBTI, until the submission deadline of July One advantage of the IIRW is the Electromigration, Reliability and 16, 2011. moderated Discussion Groups that variability of FinFETs, soft errors and The IIRW is quite a bit different are held in the evenings, organized irradiation, reliability of III-V semi- from a typical technical conference. this year by Ricki Southwick, Boise conductors, hot carriers, and the im- From the moment you arrive, you re- State University. Following up on plications of TDDB for high-k. Check alize that you are taking part in some- the Discussion Groups are the Spe- the IIRW website for updates on tu- thing special. Located 6000 ft high in cial Interest Groups, which are com- torial presenters. the Sierra Nevada Mountains, the posed of small groups of attendees One unique aspect of the work- Stanford Sierra Conference Center who want to continue their discus- shop is the opportunity for any at- provides an ideal atmosphere for a sions on a particular topic of inter- tendee to present a walk-in poster relaxing yet informative workshop. est which often continues even after of their latest work. No matter how All aspects of the workshop, includ- leaving the workshop. far along your research is, your ide- ing the physical isolation of the loca- Yet another advantage of attend- as will be accommodated. This is a tion, the absence of distractions such ing the IIRW is the extensive col- great way to share that new project

July 2011 ❍ IEEE Electron Devices Society Newsletter 3 you are working on and to get world- work, but also to build long-lasting the Stanford Sierra Conference Center class feedback. friendships. is limited to roughly 120 attendees and Finally, attendees have Wednes- Additional information about the the workshop has sold out in the past. day afternoon off to enjoy a variety workshop is available on the IIRW On behalf of the 2011 IIRW Com- of outdoor activities such as hiking, website at www.iirw.org, or by contact- mittee, I look forward to meeting volleyball, sailing or kayaking, bik- ing Rolf Geilenkeuser of Globalfoun- you in Lake Tahoe! ing, walking, or simply continuing dries, 2011 IIRW General Chair, (rolf. Andreas Aal that intriguing conversation from [email protected]). 2011 IIRW Communications Chair the night before. This free after- Note: If you want to take part in this Melexis noon is a great way to not only net- event, please register early as space at Erfurt, Germany

2011 IEEE COMPOUND SEMICONDUCTOR IC SYMPOSIUM (CSICS)

(continued from page 1) quality state-of-the-art technical pa- and interesting displays with corpo- world-class tennis courts, the luxu- pers, 4 panel sessions, and an Indus- rate representatives on hand. The rious Kohala Spa, nine restaurants try Exhibit. The short courses, which list of exhibitors can be found in the featuring all sorts of international run in parallel on Sunday, October CSICS advance program which will cuisine, shops, a Museum Walkway 16th, are titled “Radar Fundamentals, be published and distributed in late lined with authentic treasures, and Systems, and Circuits” and “Stabil- June. a Camp Menehune children’s pro- ity Techniques for Microwave and RF To complement the Symposium, gram. Activities at the resort include Amplifier Design” and provide the there are several social events which the famous Dolphin Quest Dolphin attendees with a unique opportunity include the Sunday Evening CSICS Swim and Encounter and snorkeling to learn from ten world-renowned Opening Reception, the Monday in a four acre saltwater lagoon with instructors in their respective areas CSICS Exhibition Opening Recep- the honu (sea turtles) by the water- of expertise. The Symposium will tion, the CSICS Exhibition Luncheon fall. On the big island one can tour also be offering the popular annual on Tuesday, and a Luau on Tues- the Hawaii Volcanoes National Park introductory level primer course on day evening. Breakfasts and coffee on a Twilight Tour or take a scenic “Basics of Compound Semiconduc- breaks will also be served on Mon- drive along the Hamakua Coast. tor ICs.” This year the Symposium day, Tuesday, and Wednesday. For registration and further infor- will feature approximately 15 invited The Symposium will be held mation, please visit the CSICS web- papers on a wide range of important at the Hilton Waikoloa Village Re- site at http://www.csics.org. Further topics encompassing device engi- sort. This 62-acre oceanfront resort questions may be addressed to the neering to circuit application using blends contemporary facilities with Symposium Chair: Dan Scherrer, advanced compound and other re- the graceful Hawaiian culture and Phone: 1-310-812-5892, E-mail: dan. lated semiconductor technologies. is a destination within itself. Three [email protected]. We hope you In addition, the Symposium will con- towers occupy a protected oasis wo- can attend. tinue the tradition of including im- ven around tropical gardens which portant “late breaking news” papers. abound with the subtle elegance of Harris (Chip) Moyer The technology exhibition will be Hawaiian splendor. The property 2011 CSICS Publicity Chair held on Monday and Tuesday. The boasts two championship golf cours- HRL Laboratories, LLC exhibition will feature informative es, a seaside putting course, eight Malibu, CA, USA

4 IEEE Electron Devices Society Newsletter ❍ July 2011 S OCIETY N EWS

ANNOUNCEMENT OF NEWLY ELECTED ADCOM MEMBERS

On December 5, platforms. Ravi is former Editor-in- versity of Central Florida. Dr. Liou has 2010, the EDS Chief for IEEE Potentials, Chair of the been awarded 6 U.S. patents, and AdCom held its EDS GOLD Committee and is an IEEE has published 8 books, 240 journal annual election of EDS Distinguished Lecturer. He has papers, and 190 papers in conference members-at-large. also served on the IEEE-USA Board proceedings. Dr. Liou was awarded The following are of Directors, the IEEE-Region 1 Board the UCF Pegasus Distinguished Pro- the results of the and the IEEE Publications Board. fessor in 2009 – the highest honor be- election and brief stowed to a faculty member at UCF, Cor L. Claeys EDS Chair of biographies of FIRST-TIME ELECTEES: and the IEEE Joseph M. Biedenbach Nominations and the individuals Arturo Escobosa Outstanding Engineering Educator Elections elected. was born in Cu- Award in 2004. His other honors are liacan, Mexico. Fellow of IEEE, Fellow of IET, and ADCOM MEMBERS-AT-LARGE He received a Chang Jiang Endowed Professor of A total of seven persons were elect- degree in Com- Ministry of Education – the highest ed to three-year terms (2011–2013) munications and honorary professorship in China. Dr. as members-at-large of the EDS Ad- Electronics Engi- Liou served as the IEEE EDS Vice- Com. One of the seven individuals neering from the President of Regions/Chapters, IEEE was re-elected for a second term, National Polytechnic Institute, Mexi- EDS Treasurer, IEEE EDS Adminis- while the other six were first-time co in 1978. He was granted a Masters trative Committee Elected Member, electees. Their backgrounds span a in Science diploma in Electrical En- and IEEE EDS Educational Activities wide range of professional and tech- gineering from Cinvestav, Mexico, Committee Member. nical interests. also in 1978. He received his Ph.D. degree from the Aachen Technical Mikael Östling re- SECOND TERM ELECTEES: University, Germany in 1983, due ceived his MSc Ravi M. Todi re- to his work at the Institute of Semi- degree in engi- ceived his Mas- conductor Electronics, in the field neering physics ter’s and Doctoral of ohmic contacts on GaAs MOCVD and Ph.D. degree degree in Electri- epitaxial layers. Since 1983, he has from Uppsala Uni- cal Engineering been working as full professor at the versity in 1980 and from the Universi- Solid State Electronics Group of the 1983, respectively. ty of Central Flori- Electrical Engineering Department He holds a position as professor in sol- da. His graduate of Cinvestav, México. His research id state electronics and is appointed research work was focused on gate interests include MOCVD Epitaxial Dean of the School of Information stack engineering, with emphasis on Growth of III-V Compounds, Opti- and Communication Technology, binary metal alloys as gate electrode cal Characterization of Semiconduc- KTH. He was a senior visiting Ful- and on high mobility Ge channel de- tors, X-Ray diffraction for Crystal bright Scholar with the Center for vices. His research interest includes Characterization. Integrated Systems (CIS) at Stanford semiconductor process integration University, and a visiting profes- and device technology for non-con- Juin J. Liou re- sor with the University of Florida, ventional CMOS scaling. Since 2007, ceived the Ph.D. Gainesville. In 2005, he co-founded he is working as Advisory Engineer/ degree from the the company TranSiC, which was ac- Scientist at Semiconductor Research University of Flor- quired by Fairchild Semiconductor and Development Center at IBM Mi- ida, Gainesville in in 2011. In 2009, he received the first croelectronics Division focusing on 1987. He is now ERC award for advanced investigator high performance eDRAM integra- with the School of grant. His research interests are sili- tion on 45 nm and 22 nm SOI logic EECS at the Uni- con/silicon germanium devices and

July 2011 ❍ IEEE Electron Devices Society Newsletter 5 process technology for very high is an Editorial Board Member of Xing Zhou re- frequency, as well as device technol- Microelectronics Reliability Jour- ceived his B.E. de- ogy for wide bandgap semiconduc- nal. He provides technical training gree in electrical tors with special emphasis on silicon in device analysis area to practic- engineering from carbide for high power applications. ing engineers for past two decades Tsinghua Univer- He has supervised 30 Ph.D. theses and doing research in the area of sity in 1983, M.S. works, and authored about 400 sci- physical failures including gate di- and Ph.D. degrees entific papers published in interna- electrics. He is a Fellow IETE, Mem- in electrical engi- tional journals and conferences. He ber ESD Association and Member neering from the University of Roches- is an editor of the IEEE Electron De- EDFAS. ter in 1987 and 1990, respectively. He is vice Letters and a Fellow of the IEEE. currently a tenured Associate Profes- Albert Wang re- sor in the School of Electrical and Elec- M.K. Radhakrishnan ceived BSEE from tronic Engineering, Nanyang Techno- is Chief Techni- Tsinghua Uni- logical University, Singapore. His past cal Consultant versity and Ph.D. research interests include Monte Carlo NanoRel, Singa- from the State simulation of photo carrier transport pore and Visiting University of New and ultra fast phenomena as well as Professor Depart- York at Buffalo. mixed-mode circuit simulation and ment of Electron- He is a Professor CAD tool development. His recent re- ics, Cochin Uni- at the University of California. His research mainly focuses on nanoscale versity of Science and Technology, search covers Design-for-Reliability, CMOS device compact modeling. He India. During the past 30 years he RF/analog ICs and SoCs, CAD and is an editor for IEEE Electron Device worked with ST Microelectronics, Modelling, Nano Devices and Cir- Letters, Chair of the EDS Asia Pacific Philips, ISRO, Institute of Micro- cuits, etc. He published one book Subcommittee for Regions/Chapters, electronics and National Univer- and 160+ papers. Wang has been a member of the EDS Compact Mod- sity of Singapore at various senior on the editorial board for IEEE Elec- eling Committee as well as Member- positions. He was Technical Chair tron Device Letters, Transactions on ship, Publications, and Educational IEEE IPFA 1995–97, IPFA General Circuits and Systems II, Journal of Activities Committees, an EDS Distin- Chair 1999, IPFA Board member, Solid-State Circuits, Transactions on guished Lecturer and a Senior Mem- IEEE IEDST General Chair 2009 and Circuits and Systems I and Transac- ber of the IEEE. Chairman IEEE Rel/CPMT/ED Sin- tions on Electron Devices. He is a Cor L. Claeys gapore Chapter 2000–01. He is an Distinguished Lecturer and Member- EDS Chair of Nominations EDS Distinguished Lecturer, EDS ship Vice President for the IEEE Elec- and Elections Newsletter Editor and SRC Vice- tron Devices Society. He is a Fellow IMEC Chair for Region 10. Radhakrishnan of IEEE and AAAS. Leuven, Belgium

CALL FOR NOMINATIONS – EDS ADCOM MEMBERS-AT-LARGE

The Electron De- members will be elected this year for may be self-nominated, or may be vices Society of a term of three years, and a maximum nominated by another person; in the the IEEE invites of two consecutive terms is allowed. latter case, the nominee must have the submission of In 2011, the election will be held after been contacted and have agreed to nominations for the AdCom Meeting on Sunday, De- serve if elected. Any member of EDS election to its Ad- cember 4th. Electees begin their term in good standing that has previously ministrative Com- in office on January 1, 2012. For your served for at least one year as an mittee (AdCom). information, the nominees do not Cor L. Claeys EDS AdCom Member (Standing and EDS Chair of Nomi- Presently, the EDS need to attend the AdCom Meeting/ Technical Committee VPs and Mem- nations and Elections AdCom meets Election to run. bers, Publication Editors, Represen- twice per year and Nominees are being sought to fill tatives & Chapter Chairs) is eligible to is composed of 22 members. Eight the slate of candidates. Nominees be nominated. The nominees do not

6 IEEE Electron Devices Society Newsletter ❍ July 2011 need to attend the AdCom Meeting/ of the four officers (President, Pres- is very desirable that submissions Election to run. On the other hand, if ident-Elect, Treasurer or Secretary), include a biographical summary in elected, the nominees are expected the Jr. or Sr. Past President or one a standard two-page format. The to attend the two AdCom Meetings of the 22 current AdCom Members- EDS Executive Office can provide a year. While the December meeting at-Large. you with an example of the format. is organized in connection with the Please send your nominee’s If you have any questions regarding IEEE International Electron Devices name, address, endorsement letter the nomination requirements or pro- Meeting, the Spring meeting is fre- and supporting information to the cess, feel free to contact Laura Riello quently held outside the US. In gen- EDS Executive Office Sr. Admin- ([email protected]). eral, the travel and accommodation istrator, Laura J. Riello, IEEE, 445 Cor Claeys costs to attend these meetings are Hoes Lane, Piscataway, NJ 08854, EDS Chair of Nominations borne by the elected member. Fax: 732-235-1626, E-mail: l.riello@ & Elections All nominees must be endorsed ieee.org in time to be received by IMEC by one ‘full’ voting member, i.e., one the deadline of October 15, 2011. It Leuven, Belgium

EDS ADMINISTRATIVE COMMITTEE ELECTION PROCESS

The Members-at-Large (MAL) of the needs to submit an email to Laura the meeting. The nominees do not EDS AdCom, are elected for stag- Riello ([email protected]) stating that need to attend the AdCom Meeting/ gered three-year terms, with a maxi- he/she would like to endorse the Election to run. On the other hand, if mum of two consecutive terms. The candidate. elected, the nominees are expected 1993 Constitution and Bylaws chang- Effective with the 2010 election, to attend the two AdCom meetings es mandated increasing the number the EDS AdCom approved a change a year. While the December meeting of elected MAL from 18 to 22, and to now require that each nominee is organized in connection with the required that there be at least two must have previously served for at IEEE International Electron Devices members from both IEEE Region 8 least one year as an EDS AdCom Meeting, the spring meeting is fre- (Europe, Middle East & Africa) and Member (Standing and Technical quently held outside the US. In gen- Region 10 (Asia & Pacific). In 2003, Committee VPs and Members, Pub- eral, the travel and accommodation EDS made changes to its Constitu- lication Editors, Representatives & costs to attend these meetings are tion and Bylaws to require that at Chapter Chairs). borne by the elected member. least one elected AdCom member The election procedure begins A continuing flow of new Ad- is a Graduate of the Last Decade with the announcement and Call for Com members who are interested (GOLD member). A GOLD member Nominations in the EDS Newsletter. in working for the improvement of is defined by IEEE as a member who The slate of nominees is developed the Society and its related technical graduated with his/her first profes- by the EDS Nominations Commit- areas is essential for the continued sional degree within the last ten tee and includes the non-Commit- development of EDS and the field of years. It is also required that there tee and self-nominations received. electron devices. Those interested in are at least 1.5 candidates for each Nominees are asked to submit a the field, the Society, and its opera- opening. In 2011, eight positions will two-page biographical resume in a tions are encouraged to attend Ad- be filled. standard format. Com meetings, become involved in Each nominee needs to be en- Nominations are closed on Oc- Society activities, and consider run- dorsed by a ‘full’ voting member, tober 15th, and the biographical re- ning for election to AdCom. i.e., one of the four officers (Presi- sumes and endorsement letters are Cor Claeys dent, President-Elect, Treasurer or distributed to the ‘full’ voting mem- EDS Chair of Nominations Secretary), the Jr. or Sr. Past Presi- bers of AdCom prior to the Decem- & Elections dent or one of the 22 current AdCom ber AdCom Meeting. The election IMEC Members-at-Large. The endorser is then held after the conclusion of Leuven, Belgium

July 2011 ❍ IEEE Electron Devices Society Newsletter 7 EDS-ETC (ENGINEERS DEMONSTRATING SCIENCE: AN ENGINEER TEACHER CONNECTION)

As part of the EDS strategy on rejuve- nating chapter activities in the United States and the rest of the world the newly created program “EDS-ETC (Engineers Demonstrating Science: an Engineer Teacher Connection),” Jindal visited our chapter, he was will be formally introduced in the very supportive of this effort. Since near future. Activities in this area then, with strong support from him date back to several years carried out as EDS President, the effort is being by the ED Mid-Hudson Valley Chap- expanded. The program has been ter under my stewardship as EDS designed with the help of volunteers Elenco Snap Circuits® Kit Chapter Chair. In 2008, when Renuka from the Rochester, Boise and the Mid-Hudson Valley Chapters. These dedicated volunteers have run initial evaluations working with their local science teachers ranging from the 4th through 12th grade levels. In the first phase of this project, EDS plans to make this offering available to our chapters in the United States. Based on this experience the Society plans to roll it out to EDS chapters around the globe. In anticipation, we have recruited the ED Colombia Chapter to run a pilot program in Bogota with the participation of two major universities partnering with local schools. The goal of the program is to enable chapter members to visit local schools or host events designed to Fernando Guarin (4th from left) with members of the ED Colombia Chapter engage young students in the field of electrical engineering. By utilizing the easy-to-use Elenco Snap Circuits ® kits, students learn about electronic circuits using a “hands-on” approach to experience the exciting and cre- ative field of electronics. We hope to encourage them to consider electrical and electronic engineering as a career. This versatile tool, along with your enthusiasm and expertise, will be used to demonstrate the many applications and motivate young students into the electron devices field. Stay tuned for a formal announcement and full program details.

Fernando Guarin ED Mid-Hudson Chapter IBM Microelectronics Hopewell Junction, NY, USA

8 IEEE Electron Devices Society Newsletter ❍ July 2011 EDS PRESIDENT VISITS PURDUE UNIVERSITY

On Friday, March 4, 2011, Dr. website, which is free and Renuka Jindal, President of open to the public. The web- the IEEE Electron Devices site contains video courses, Society, visited Purdue Uni- simulation tools, animations versity’s College of Electrical and many other teaching and Computer Engineering materials. Over 165,000 users (ECE), Network for Computational from the local community are ex- visit this site annually. Nanotechnology (NCN) and the pected to attend this year’s event. As part of his visit, Dr. Jindal Birck Nanotechnology Center (BNC) An equally fantastic outreach re- toured the Birck Nanotechnology in West Lafayette, Indiana. Purdue’s source NanoHUB.com, is being led Center. This building is an impres- College of ECE has over 65 under- by Purdue’s Network for Computa- sive 187, 000 sq. ft facility that was graduate and graduate students in tional Nanotechnology (NCN), which completed in July of 2005. In the the Micro and Nanotechnology (MN) was established with funding from heart of the building is the 25,000 sq. ft area, which is primarily focused on the National Science Foundation. Scifres Nanofabrication Laboratory, electron devices (EDs). An important MN students are contributing to this which is a nanofabrication clean- objective of Dr. Jindal’s visit to Pur- room. For more information about due was to encourage students to BNC, please visit http://www.purdue. achieve their personal best, instill a edu/discoverypark/nanotechnology desire to give back to their commu- During lunch, Dr. Jindal led a dis- nities, to realize the benefits of being cussion on the responsibility that an active member of professional or- each of us has in the field of electron ganizations and to discuss plans for devices to strive to reach our per- the establishment of an EDS chapter sonal best in our studies and future at Purdue. work, as well as our responsibility to One of the exciting ways MN give back to our communities and Birck Technology Center students are giving back to their mentoring others. Many of the dis- community is through Purdue Uni- coveries made in the electron devic- versity’s Nanodays 2011. This K-12 es field have led to important break- outreach activity that has been orga- throughs in technology. Following nized by the students, with the help lunch, Dr. Jindal gave two seminars. of faculty and staff of BNC and NCN. The first one was geared towards So far more than 170 graduates, un- graduate and undergraduate stu- dergraduates, faculty and staff from dents and focused on the benefits many areas have volunteered to of starting and joining an IEEE EDS help with this two day event. Over Chapter. It is important that students 26 interesting micro and nanotech- realize the value of being contribut- nology related activities and demon- ing members of EDS and IEEE. The strations will be featured. These ac- second was a fascinating seminar tivities range from thermoelectricity on his research of Nano-FET Fluc- to piezoelectricity to photovoltaics tuation Physics. to carbon nanotubes devices. Based on the number of groups that have John Wilcox signed up to attend, more than 1,000 Purdue University K-12 students, teachers and parents BNC gowning area West Lafayette, IN, USA

July 2011 ❍ IEEE Electron Devices Society Newsletter 9 MESSAGE FROM THE EDS NEWSLETTER EDITOR-IN-CHIEF

I would like to in- ceived his BSEE from the “Pon- SiGe technologies. He holds 9 pat- troduce a new ad- tificia Universidad Javeriana”, in ents, one trade secret, has published dition to the EDS Bogotá, Colombia, the M.S.E.E. de- more than 65 papers and delivered Newsletter Edito- gree from the University of Arizona, 4 tutorials at the IEEE’s International rial Staff, Fernando and the Ph.D. in Electrical Engi- Reliability Physics Symposium. Guarin, of IBM neering from Columbia University. Dr. Guarín is an IEEE Fellow, Dis- Microelectronics, His doctoral research studied the tinguished Lecturer for the IEEE Elec- New York, whose Molecular Beam Epitaxial growth tron Devices Society, a member of the Ninoslav D. biography fol- of Silicon based alloys for device IEEE EDS AdCom and Education Com- Stojadinovic EDS Newsletter lows. Dr. Guarin applications. He has been actively mittees. He is the past Chair for the Editor-in-Chief will now be coor- working in microelectronic reliabil- Electron Devices Society in the IEEE’s dinating news for ity for 30 years. Mid-Hudson Valley Chapter, and past the Eastern, Northeastern & South- From 1980 until 1988 he was a president of the Society of Hispanic eastern USA (Regions 1, 2 & 3). It is member of the Military and Aero- Professional Engineers SHPE for the my pleasure to welcome him as a space Operations division of Na- Mid Hudson Valley Region. new editor for the EDS Newsletter. tional Semiconductor Corporation Once again, I welcome the new where he held positions both in editor and wish him success. Please Fernando Guarin engineering and management. In contact your respective Regional is a Senior En- 1988 he joined the IBM microelec- Editor directly with news items. A gineer/Scientist tronics division where he has worked listing of EDS Regional Newsletter at the IBM Mi- in the reliability physics and mod- Editors is available on page two of croelectronics eling of Advanced Bipolar, CMOS this publication. Semiconductor and Silicon Germanium BiCMOS Ninoslav D. Stojadinovic Research Devel- technologies. He has been the team EDS Newsletter Editor-in-Chief opment Center leader for the qualification of several University of Nis SRDC in New York State. He re- of IBM’s leading edge CMOS and Nis, Serbia

EDS MEMBERS NAMED RECIPIENTS OF 2011 IEEE TECHNICAL FIELD AWARDS

Seven EDS Members were among ics, design and scaling of nanosized ics governing electron transport in the recipients of the 2011 IEEE Tech- electronic devices.” semiconductor devices. The tool is nical Field Awards: The insight provided by Massimo considered the gold standard for V. Fischetti, David J. Frank and Ste- device modeling with its ability to ven E. Laux in understanding the capture realistic physical properties physical effects that occur in elec- in small silicon transistors, explain- tronic devices at small dimensions ing key phenomena and suggesting has been key to silicon technology new directions for research. Drs. evolving at a rapid pace. Their col- Fischetti, Frank and Laux demon- lective work on the development strated 30-nm gate lengths in silicon and application of modeling and transistors in 1992, at a time when David J. Frank and Steven E. Laux simulation tools over the past 20 industry thought it difficult to scale of IBM T.J. Watson Research Center, years has provided guidance dur- to transistor gate lengths below Yorktown Heights, New York, USA, ing the early stages of the design 100 nm. With impact still being felt have been named two of the three cycle, reducing R&D costs for future today, their work sparked worldwide co-recipients of the 2011 IEEE Cledo nanotechnology. Drs. Fischetti and interest in pursuing the double-gate Brunetti Award. The citation states, Laux developed the full-band Monte transistor structure as the ultimately “For contributions to the funda- Carlo simulation program DAMO- scaled silicon transistor. A Fellow mental understanding of the phys- CLES, which shed light on the phys- of the American Physical Society,

10 IEEE Electron Devices Society Newsletter ❍ July 2011 Dr. Fischetti is the Texas Instruments and the creation of strained silicon demonstrated that highly strained Distinguished Chair in Nanoelec- developed by Fitzgerald in 1990, materials could be deposited in tronics with the Materials Science Hoyt and colleagues at Stanford small areas or, alternatively, strain- and Engineering Department at the pioneered the application of such free SiGe could be deposited over University of Texas at Dallas. AIEEE strained silicon to increase carrier large areas with a very low defect Fellows, Drs. Frank and Laux are re- transport properties in Si MOSFETs. density. The ability to engineer search staff members at the IBM T.J. Hoyt demonstrated that MOSFETs highly relaxed and highly strained Watson Research Center, Yorktown based on strained silicon have im- levels on Si led to Fitzgerald creat- Heights, New York. proved drive current due to higher ing the first high-quality strained electron mobility (lower resistance) Si material and measuring the first in the transistor channel. Strained high-mobility strained Si with his silicon transistors lower energy colleague Ya-Hong Xie at AT&T Bell consumption and enable faster cir- Laboratories. Fitzgerald’s break- cuits. The work of Hoyt and Fitzger- through work on compressive strain ald inspired the use of strained Si in SiGe and Ge defined the upper technology in mainstream devices, limits of hole mobility enhance- technology that has been key to the ments in long-channel MOSFETs in further shrinking/scaling of integrat- the SiGe materials system. Judy L. Hoyt and Eugene A. Fitzgerald ed circuits. Strained Si was behind An IEEE Fellow, Hoyt is also a of the Massachusetts Institute of the industry’s 2003 release of the member of the American Physi- Technology, Cambridge, Massachu- 90-nm generation of semiconductor cal Society. Her awards include the setts, USA, have been named the re- technology, which featured a 50% IEEE Paul Rappaport Award and the cipients of the 2011 IEEE Andrew S. shrinkage in size and 30% improve- IEEE George E. Smith Award. She re- Grove Award. Their citation states, ment in performance, and subse- ceived her bachelor’s degree in phys- “For seminal contributions to the quent generations have continued ics and applied mathematics from demonstration of Si/Ge lattice mis- to rely on its performance-boosting the University of California, Berkeley match strain engineering for en- capabilities. and her doctorate in applied physics hanced carrier transport properties In 1992, working with Jeff Wels- from Stanford University, Calif. Hoyt in MOSFET devices.” er and James Gibbons at Stanford is Professor of Electrical Engineering Judy L. Hoyt and Eugene A. University, Hoyt demonstrated for and Computer Science at the Mas- Fitzgerald, researchers whose the first time the use of strain to en- sachusetts Institute of Technology groundbreaking contributions in- hance current drive in MOSFETs. Us- (MIT), Cambridge, and associate di- volving strained silicon semiconduc- ing thin strained layers of Si on top rector of MIT’s Microsystems Tech- tor materials has enabled the contin- of a relaxed SiGe artificial substrate, nologies Laboratories. ued shrinking of integrated circuits a materials technique pioneered by An IEEE Member, Fitzgerald is the and faster chips and devices, are be- Fitzgerald, Hoyt demonstrated fully recipient of the IEEE George E. Smith ing honored by IEEE with the 2011 functioning strained-channel MOS- Award. He received his bachelor’s IEEE Andrew S. Grove Award. IEEE FETs. Hoyt also showed that strain degree from the Massachusetts Insti- is the world’s largest technical pro- substantially improves very short tute of Technology, Cambridge and fessional association. channel MOSFETs and demonstrat- doctorate from Cornell University, The award, sponsored by IEEE ed, with Ken Rim, the first deep-sub- Ithaca, New York, both in materials Electron Devices Society, recogniz- micron strained-channel devices. science and engineering. Fitzgerald es Hoyt and Fitzgerald for seminal This showed the potential for the is the Merton C. Flemings-Singapore contributions to the demonstration strain-engineered high-performance MIT Alliance Professor of Materials of silicon germanium (SiGe) lattice MOSFETs and inspired industry Engineering with the Massachusetts mismatch strain engineering for en- to develop approaches to harness Institute of Technology. hanced carrier transport properties strain in modern Si integrated in metal-oxide field-effect transis- circuits. Ronald E. Reedy tor (MOSFET) devices. The award It was Fitzgerald’s development of Peregrine Semi- will be presented on 6 December of high-mobility strained silicon conductor, San 2011 at the IEEE International Elec- using low-defect relaxed SiGe on Diego, California, tron Devices Meeting in Washing- silicon in 1990 that spurred Hoyt’s USA, has been ton, D.C. work. Fitzgerald was able to solve named a co-re- Utilizing materials breakthroughs defect-formation problems to allow cipient of the 2011 involving the joining of Si and SiGe the joining of Si and Ge. He then IEEE Daniel E.

July 2011 ❍ IEEE Electron Devices Society Newsletter 11 Noble Award for Emerging Technolo- Willy Sansen of 2011 IEEE Leon K. Kirchmayer Gradu- gies. His citation states, “For basic Katholieke Univer- ate Teaching Award. His citation research and development of silicon siteit Leuven, Leu- states, “For inspirational teach- on sapphire technology culminating ven, Belgium, has ing and student mentoring in the in high-yield, commercially viable in- been named the field of advanced microelectronic de- tegrated circuits.” recipient of the vices and circuits.” The persistence and contribu- 2011 IEEE Don- John D. Cressler believes that tions of Mark L. Burgener and Ron- ald O. Pederson today’s engineering students re- ald E. Reedy overcame barriers to Award in Solid-State Circuits. His cita- quire more than just a strong make silicon on sapphire (SOS) tion states, “For leadership in analog technical background in the tradi- technology commercially feasible integrated circuit design.” tional core courses, so he includes for wireless communications. Drs. Willy Sansen has provided the lead- unique design experiences within Burgener and Reedy stood by SOS ership necessary to establish analog in- his courses so that students gain technology that, despite great tegrated circuits as a crucial component exposure to real-world challenges. promise, had initially been aban- of the microelectronics industry. Focus- As a result, his graduate students doned by semiconductor market ing on the design of analog integrated enter the professional world both leaders. First discovered during circuits, Dr. Sansen grew his research technically strong and, important- the 1960s, SOS technology pre- group (ESAT-MICAS) at the Katholieke ly, aware of the social implications sented manufacturing problems Universiteit Leuven, Belgium, into one of the technology they develop. that prevented companies from of Europe’s largest and best known. Considered a leading expert in pursuing commercialization. The Designs originating from his group silicon-germanium heterojunction efforts of Drs. Burgener and Reedy have been incorporated by companies bipolar transistor technology, Dr. during the 1980s and 1990s over- worldwide for use in chips for wireless Cressler instills his passion for so- came these obstacles, making SOS communications, consumer electron- cial awareness within his students, commercially viable for producing ics and sensors for cochlear implants examining both the positive and integrated circuits with improved and telemetry systems. Dr. Sansen was negative aspects of the micro- and speed, lower power consumption a pioneer of using computer tools for nanoelectronics revolution and in- and more isolation compared to symbolic analysis of circuits, providing spires them to use technology to bulk silicon circuits. Even after greater insight during the design proc- help build a better world. He also demonstrating viable SOS circuits, ess compared to purely numerical anal- serves as faculty mentor for Geor- the pair had to erase the stigma ysis methods. Known for excellence in gia Institute of Technology’s SURE associated with the earlier prob- teaching and the ability to inspire, his program, which incorporates top- lems. They co-founded Peregrine doctorate students have progressed to notch minority undergraduates Semiconductor in 1990 to spur hold highly regarded positions in both into research teams for an early their commercialization efforts. industry and academia worldwide. taste of what graduate school is They developed the UltraCMOS His collaborative efforts with industry really like. An IEEE Fellow, Dr. process, which solved critical have also resulted in successful spin- Cressler is currently the Ken Byers manufacturing issues and made off companies. An IEEE Life Fellow, Dr. Professor of Electrical and Compu- SOS cost-effective. After an initial Sansen is Professor Emeritus at the ter Engineering at Georgia Institute shipment of 100 chips in 1995, to- Katholieke Universiteit Leuven. of Technology. day Peregrine has sold over 500 million UltraCMOS integrated John D. Cressler Marvin H. White circuits. Both IEEE Members, Dr. of Georgia Insti- EDS Vice President of Awards Burgener is vice president of ad- tute of Technolo- Ohio State University vanced research and Dr. Reedy is gy, Atlanta, Geor- Columbus, Ohio, USA the chief operating officer at Pere- gia, USA, has grine Semiconductor Corporation, been named the San Diego, California. recipient of the

12 IEEE Electron Devices Society Newsletter ❍ July 2011 IEEE NANOTECHNOLOGY COUNCIL ANNOUNCES 2011 AWARD WINNERS

IEEE Nanotechnology Council Awards management of advanced electronics” Nanotechnology Early Committee (Chaired by Prof. James and Career Award E. Morris) announced the 2011 win- Dr. Meyya Meyyappan, NASA The purpose of the Nanotechnol- ners for the IEEE Nanotechnology Pi- Ames Research Center, Moffett ogy Early Career Award is to rec- oneer Award, IEEE NTC Distinguished Field, California ognize individuals who have made Service Award and IEEE NTC Early “For carbon nanotube application contributions with major impact on Career Award. These awards will development and leadership in the field of nanotechnology. The be presented at IEEE NANO 2011 in nanotechnology” winner of the 2011 award is: Portland, Oregon, in August 2011. Professor Ali Khademhosseini, Distinguished Service Harvard-MIT Division of Health Sci- Nanotechnology Award ences and Technology, Cambridge, Pioneer Award The purpose of the Distinguished Ser- Massachusetts The NTC Pioneer Award in nanotech- vice Award is to recognize an individual “For outstanding nano- and mi- nology is to recognize individuals who has performed outstanding ser- cro-engineering innovations for con- who by virtue of initiating new areas vice for the benefit and advancement trolling the cellular environment for of research, development or engi- of the IEEE Nanotechnology Council. tissue engineering and regenerative neering have had a significant im- The winner of the 2011 award is: medicine” pact on the field of nanotechnology. Professor Chennupati Jagadish, Congratulations to all the winners. The winners of the 2011 award are: Australian National University, Professor Alexander A. Balandin, Canberra University of California, Riverside “For his distinguished services in James E. Morris “For pioneering contributions to enhancing the reputation and influ- 2011 IEEE NRC Awards nanoscale phonon transport with ap- ence of the Nanotechnology Council Committee Chair plications in nanodevices, grapheme during his term as the President of Portland State University devices, thermoelectric and thermal the Council” Portland, OR, USA

STATUS REPORT FROM THE 2010 EDS PH.D. STUDENT FELLOWSHIP WINNERS

In 2000, the IEEE materials, plasmas, semiconductors, winners were: Can Bayram, Guru- approved the es- quantum-effect materials, vacuum, prasad Katti and Jing Zhuge. The tablishment of the and emerging materials. Specific winners are pursuing distinctly differ- Electron Devic- applications of these devices in- ent research topics for their doctoral es Society Ph.D. clude bioelectronics, biomedical, degrees and the following are brief Student Fellow- computation, communications, dis- progress reports written by them. ship Program. plays, electro and micro mechanics, The Program imaging, micro actuators, optical, Can Bayram is Agis A. Iliadis is designed to photovoltaics, power, sensors and continuing his EDS Ph.D. Student signal processing. In deference to Ph.D. degree in Fellowships Chair promote, recognize, and support the increasing globalization of our Electrical Engi- graduate level study and research Society, at least one fellowship is to neering at North- within the Electron Devices Society’s be awarded to students in each of western Univer- Fields of Interest, which include: All three geographical regions: Ameri- sity as an IBM aspects of the engineering, phys- cas, Europe/Mid-East/Africa, and Fellow and Link ics, theory, experiment and simu- Asia & Pacific. Foundation Energy Fellow working at lation of electron and ion devices In July 2010, EDS announced the Center for Quantum Devices. His re- involving insulators, metals, organic 2010 Fellowship winners. The three search interests include development

July 2011 ❍ IEEE Electron Devices Society Newsletter 13 of energy-efficient environmental Leuven (KUL). Over the last year his Huang. Her research interests include semiconductor devices, exploring major research contributions have the simulation and optimization of gap-engineered wide band gap semi- been the development of tempera- nano-scaled CMOS devices, and the conductors in pursuit of higher per- ture based Through Silicon Via (TSV) experimental characterization on low formance from ultraviolet towards capacitance model in addition to the frequency noise and variability, with terahertz wavelength optoelectronic assessment of TSV technology to a particular focus on gate-all-around devices, and novel micro/nano elec- achieve minimum TSV capacitance. silicon nanowire transistors. tromechanical systems (MEMS/ He is also analyzing the clock distri- From November 2009 to August NEMS), and fast electron devices. He bution in 3D ICs by developing in- 2010, she was a visiting researcher at has co-authored 25 journal articles, house 3D Design infrastructure using the NCAIS group of IMEC, supported mostly in Applied Physics Letters, and existing 2D design tools. He would by the China Scholarship Council. made more than 50 scientific contri- be defending his Ph.D. Thesis tenta- Her project at IMEC is on the design butions. He is a reviewer of high im- tively in September 2011. and optimization of Tunnel FETs for pact journals including Applied Phys- low power applications, under the ics Letters and Optics Express. He is a Jing Zhuge re- guidance of Prof. Guido Groesenek- member of the IEEE, SPIE, OSA, MRS, ceived a B.S. deen and Dr. Anne S. Verhulst. APS, AAAS, ECS, IOP, ICDD and ACS. gree in Physics She has authored or co-authored from School of 23 papers in international technical Guruprasad Katti Physics, Peking journals and conferences. She has has continued upon University, Bei- been an IEEE student member since his research work jing, China, in 2006. in 3D ICs-Tech- 2006. She is pur- nology, Design suing her Ph.D. degree in Microelec- Agis A. Iliadis and VLSI CAD/ tronics and Solid-State Physics in the EDS Ph.D. Student EDA arena dur- Institute of Microelectronics, Peking Fellowships Chair ing his Ph.D. work University, under the supervision of University of Maryland at IMEC and Katholieke Universiteit Prof. Yangyuan Wang and Prof. Ru College Park, MD, USA

CONGRATULATIONS TO THE 17 EDS MEMBERS RECENTLY ELECTED TO IEEE SENIOR MEMBER GRADE!

Takashi Ando Wladyslaw Grabinski Yuji Suzuki* Kadoor Seetharama Bhat* Valerio Grassi Larry Wang Christopher A. Bozada Lihong Jiao Richardt Wilkinson Jeffrey Brown Carl Pettiford Tien-Chun Yang Ming Cai Khem Poudyal Xiaodong Yang* Kenneth Goodson Robert Stepenson

* = Individual designated EDS as nominating entity will be sent to employers, recognizing this new status. If you have been in professional practice for 10 years, For more information on senior member status, visit you may be eligible for Senior Membership, the high- http://www.ieee.org/web/membership/senior-mem- est grade of membership for which an individual can bers/status.html apply. New senior members receive a wood and bronze To apply for senior member status, fill out an ap- plaque and a credit certificate for up to US $25 for a plication at http://www.ieee.org/organizations/rab/md/ new IEEE society membership. Upon request a letter smelev.htm

14 IEEE Electron Devices Society Newsletter ❍ July 2011 EDS SENIOR MEMBER PROGRAM

The Electron De- your employer recognizing this new http://www.ieee.org/membership_ vices Society status as well. The URL to request services/membership/senior/ established the this letter is http://www.ieee.org/ senior_requirements.html. To ap- EDS Senior Mem- web/membership/senior-members/ ply for Senior Member grade, ber Program to notification.html. please complete an applica- both complement As part of the IEEE’s Nominate- tion form, which is available at and enhance the a-Senior-Member Initiative, the http://www.ieee.org/membership_ IEEE’s Nominate- nominating entity designated on services/membership/senior/ Albert Wang EDS Vice-President a-Senior-Member the member’s application form will senior_application.html. You can of Membership Initiative and receive US$10 from IEEE for each also request a hard copy Senior make IEEE/EDS application approved for Senior Member packet via mail or fax by members aware of the opportunity Member grade when there are at contacting IEEE Admissions and and encourage them to elevate their least five approved applications. As Advancements Department, 445 IEEE membership grade to Senior an EDS member, we would appreci- Hoes Lane, P.O. Box 1331, Piscat- Member. This is the highest IEEE ate it if you could indicate on your away, NJ 08855-1331 USA, Fax: +1 grade for which an individual can Senior Member application form 732 562-6528, E-mail: senior-member@ apply and is the first step to becom- that EDS is your nominating entity. ieee.org. ing a Fellow of IEEE. If you have Please be aware that even if you We strongly encourage you to ap- been in professional practice of 10 decide to list EDS as your nominating ply for IEEE Senior Membership to years, you may be eligible for Senior entity, you still need to have an IEEE enhance your career. At the same Membership. member nominate you along with time, you’ll be helping EDS. New Senior Members receive an two other references. Your nomina- Thank you for supporting IEEE engraved wood and bronze plaque tor and your references all must be and EDS. and a credit certificate for US$25 to active IEEE members holding Senior be used towards a new IEEE society Member, Fellow or Honorary Mem- Albert Wang membership. Upon your request, ber grade. EDS Vice-President of Membership the IEEE Admission & Advance- For more information concern- University of California ment Department will send a letter to ing Senior Membership, please visit Riverside, CA, USA

EDS CHAPTER SUBSIDIES FOR 2012 The deadline for EDS chapters to request a subsidy for 2012 is September 1, 2011.

For 2011, the EDS AdCom are considered fundable include, but ieee.org of the EDS Executive Office awarded funding to 76 are not limited to, membership pro- by July 1st along with your com- chapters, with most motion, travel allowances for invited pleted chapter activity report. Final amounts primarily rang- speakers to chapter events, decisions concerning subsidies will ing from US$250 to and support for student be made by the EDS SRC Chairs/ US$1,000. In June, Chapter Chairs activities at local in- Vice Chairs in December. Subsidy were sent an e-mail notifying them stitutions. checks will be issued by late Decem- of the current funding cycle and Subsidy requests ber. Please visit the EDS website for providing them with a list of guide- should be sent via e-mail more information: http://eds.ieee. lines. In general, activities which to Laura J. Riello, l.riello@ org/chapter-subsidy-program.htm.

July 2011 ❍ IEEE Electron Devices Society Newsletter 15 THE IEEE ELECTRON DEVICES SOCIETY AND ITS PROGRAM FOR YOUNG PROFESSIONALS

EDS GOLD EDS Student/GOLD Ambassador the time of nomination and is mak- Committee Lecturer Program ing contributions in an EDS field of The EDS GOLD The Student/GOLD Ambassador Pro- interest area. The nominator must AdHoc Commit- gram is a joint initiative from EDS be an IEEE EDS member. Previous tee is dedicated GOLD and Education committees. The award winners are ineligible. A sti- to better serv- key objectives of this program are to pend of US$1,000, a certificate; and ing students and increase student branch chapters and if needed, travel expenses not to Ravi Todi young profes- provide sustained growth in member- exceed US$1,500 for a recipient re- EDS GOLD sionals. This com- ship by better serving the needs of siding in the US and not to exceed Committee Chair mittee strives to: students and young professionals. US$3,000 for a recipient residing • better serve the needs of stu- One ambassador will be appointed outside the US to attend the award dents and recent graduate pro- for each of the five following geo- presentation at the annual EDS fessionals graphical areas (same as subcom- GOLD Lecture held in conjunction • get young members involved in mittees for Regions/Chapters): North with the IEEE International Electron society activities America East (Regions 1–3 & 7); North Devices Meeting (IEDM). • effectively bridge the gap be- America West (Regions 4–6); Europe, Any initiative is only as successful tween student, GOLD and senior Middle-East & Africa (Region 8); Latin as volunteers make it. So if you are members America (Region 9); and Asia & Pacific interested in becoming active and get • increase and provide sustained (Region 10). More details on this pro- involved with any of these new initia- membership growth gram are to be made available on the tives, please contact me immediately. • help young professionals with EDS web page in the future. Please send me an e-mail indicating career opportunities within EDS’ what you would like to be involved field of interest IEEE Electron Devices Society with, including your short bio. If you The committee (when fully formed) Early Career Award are interested in serving on the GOLD will be composed of 20 members, EDS approved the establishment of Committee, you will be expected to with 14 serving on technical sub- an Early Career Award, at its June attend at least one meeting a year, committees, 1 student representa- 2008 AdCom Meeting, and the first and typically there is no financial sup- tive, and 1 representative serving on award was presented in 2009. port available to attend this meeting. each of the following existing stand- The EDS Early Career Award is For any additional information, please ing committees: awarded annually to promote, rec- contact Ravi Todi ([email protected]). • Educational Activities ognize and support Early Career De- • Meetings velopment within the Electron De- Ravi M. Todi • Membership vices Society’s field of interest. EDS GOLD Committee Chair • Publications To be eligible, the candidate must IBM Microelectronics • Regions/Chapters be an IEEE EDS GOLD member at Hopewell Junction, NY, USA

IEEE EDS DISTINGUISHED LECTURERS PARTICIPATE IN THE MINI-COLLOQUIUM HELD AT THE UNIVERSITY OF CALIFORNIA, RIVERSIDE

An IEEE Electron Devices Society (ISRS-UCR), a student-run research by the IEEE Electron Devices Society Mini-Colloquium on Microelectronics symposium at UCR, which provides UCR Student Branch Chapter, and was held, April 11, 2011, at the Uni- an interactive forum for both under- jointly sponsored by EDS and UCR. versity of California, Riverside (UCR). graduate and graduate students to The MQ featured lectures by It was held jointly with the 3rd IEEE share their research experiences and three IEEE Distinguished Lecturers: Student Research Symposium at UCR outcomes. The events were organized Prof. Ya-hong Xie (UCLA) discussed

16 IEEE Electron Devices Society Newsletter ❍ July 2011 Attendees, lecturers and organizers at the MQ site Best Student Paper Winners and EDS Judges

Prof. Stephen Parke (right) evaluating student posters Prof. Xie (right) in discussion with student a author

“ Critical Assessment of Graphene Ostling from KTH Royal Institute of es to select the Best Student Paper for FET Applications,” Prof. Stephen Technology, Sweden, was unfortu- winners. The events were well re- Parke (Northwest Nazarene Uni- nately not able to make it to the MQ ceived by more than seventy attend- versity) lectured on “Quest for the due to a last minute glitch back home. ees who enjoyed both the presenta- Ultimate Nanoscale Silicon CMOS The EDS MQ was followed by the tions and the interactions with our Transistor,” and Dr. Ravi Todi (IBM) 3rd ISRS-UCR, which drew about DL speakers and student presenters. presented “Advanced CMOS Process twenty graduate student papers and Hui Zhao Integration: looking beyond conven- forty undergraduate student papers ED UCR Chapter Chair tional scaling.” Another EDS DL for poster presentations. Our EDS University of California, Riverside who planned to attend, Prof. Mikael DL speakers also served as the judg- Riverside, CA, USA

REPORT ON THE 26TH WIMNACT HELD IN TIANJIN, CHINA

The 26th Workshop and IEEE EDS Mini-colloquium on NAnometer CMOS Technology (WIMNACT) was held, December 29, 2010, at the School of Electronic Information En- gineering (EIE), Tianjin University, China. This was a follow-up event to the 21st WIMNACT for the joint Pe- king and Tsinghua Universities’ Stu- dent Branch Chapters held January WIMNACT-26 speakers and participants (front row, from right): Tian-Ling Ren (2nd), Jianguo Ma 7, 2010, at which it was decided to (4th), Xing Zhou (5th), Guoxuan Qin (6th)

July 2011 ❍ IEEE Electron Devices Society Newsletter 17 organize similar activities in the Bei- Modeling Approach to MOS Com- organizing such joint events in the jing/Tianjin area. The WIMNACT was pact Modeling,” followed by the DL Beijing/Tianjin area to promote EDS hosted by Prof. Jianguo Ma, Dean of of Prof. Ren on “On-Chip Integrated activities. the School of EIE at Tianjin Univer- Magnetic Micro-Inductor for RFIC.” sity, who is also working on forming A third talk was given by Prof. Xing Zhou a new ED chapter at the university. Guoxuan Qin of the School of EIE Nanyang Technological University Prof. Tian-Ling Ren of Tsinghua Uni- entitled, “High Speed Flexible Elec- Singapore versity (ED Beijing Chapter Chair) tronics Based on Single-Crystalline and Prof. Xing Zhou of Nanyang Nanomembranes.” The half-day Tian-Ling Ren Technological University (Chair, event concluded with a talk by Prof. Tsinghua University SRC-AP), both EDS Distinguished Ma on “Investigating the Global Beijing, China Lecturers, participated in the event. Trend of Semiconductor Industry After introducing the audience to by Reviewing the Digital-Analog Jianguo Ma IEEE and EDS benefits, Prof. Zhou Converters.” It was a very fruitful Tianjin University gave a DL on “Unified Regional event and it was agreed to continue Tianjin, China

REPORT ON THE 27TH WIMNACT AND TJNWND 2011

The 27th WIMNACT was held at • “Methods for Improving Electrical Joint MQ between Taipei and Ja- Tokyo Institute of Technology, Yo- Properties of La2O3-based Gate pan Chapters) was held at Tokyo kohama, Japan, February 9, 2011, Dielectric Films” by Prof. H. Wong, Institute of Technology, Yokohama, and jointly organized by the IEEE City University of Hong Kong Japan, March 3, 2011, and co-orga- ED Taipei and Japan Chapters. The • “Memory Effects in SOl-FinFET nized by NCS Taiwan, JST, Japan. event was sponsored by the ED with ONO Buried Insulator,” by This workshop was also held as an Japan Chapter, Co-sponsored by Prof. J-H Lee, Kyungpook Nation- IEEE EDS Mini-Colloquium, co-or- Global COE Photonics Integration- al University, Korea ganized by the ED Taipei and Japan Core Electronics (PICE) and Frontier Finally, Prof. C., K. Sarkar, Jadavpur Chapters, with co-sponsorship by Research Center, Tokyo Institute of University, India, spoke on “Nano- Global COE Photonics Integration- Technology, with technical co-spon- Electronic Devices based on Silicon Core Electronics (PICE) and Frontier sorship by IEEE EDS. MOS Structure” and closed the MQ Research Center, Tokyo Institute of After the introduction of EDS by with a summary of the 8 lectures. Technology. Dr. S. Kimura, ED Japan Chapter It was a very good opportunity for Opening Remarks were given Chair, Prof. H. Iwai of TIT, Japan, speakers and audience, coming by Dr. W-C Chang, Deputy Minis- gave an introductory talk, “Future of from 8 countries, to get together and ter, NSC, and Mr. A. Takamatsu, Nano CMOS Technology,” followed discuss the frontier of Nano CMOS Executive Director, JST. The in- by the following six lectures: technology. troduction of the Taipei and Ja- • “The future of Nanoelectronics TJNWND 2011 (Taiwan Japan pan Chapters was given by Prof. by Scaling of CMOS and Func- Workshop on Nano Devices 2011; E. Chang, NCTU, and Prof. A. tional Diversification,” by Dr. S. Delelonibus, Leti, France • “SOI opportunities to speed up, save energy and memorize,” by Prof. S. Cristoloveanu, IMEP, GPI, France • “The Case for Modeling and Sim- ulation,” by Prof. C. Fiegna, Uni- versity of Bologna, Italy • “Advanced simulation of nano- transistors,” by Prof. F. Gamiz, University of Granada, Spain

18 IEEE Electron Devices Society Newsletter ❍ July 2011 Toriumi, University of Tokyo, fol- • “Nano-photonic devices for H. Sano and Mr. S. Sato, both from lowed by 7 talks: manipulation of light,” by Prof. TIT, receiving best poster awards. • “High Performance Green Elec- S-C Wang, NCTU, and Prof. Wrap up speeches were given by tronic Devices on Glass/Plastics,” Koyama, TIT Professors. E. Chang and H. Iwai. This by Prof. A. Chin, NCTU, and Dr. T. • “Understanding Optoelectron- workshop/MQ was an excellent way Kanayama, AIST ic Nano-Devices Composed of for the leading researchers in Taiwan • “III-V MOSFETs for Next Genera- Organic Molecules and Poly- and Japan to share their research re- tion-Fabrication of III-V MOS Ca- mer Materials” by Prof. W-G sults and for the opportunity to have pacitor,” by Prof. E. Chang, NCTU Diau, NCTU and Prof. N. Ohta, these discussions in front of so many and Prof. H. Iwai, TIT Hokakido University young researchers and students. • “Nanoparticle-based Plasmon- • “Development of nano-devic- Hiroshi Iwai ic Devices,” by Prof. S-Jr Gwo, es based on carbon nanofibers/ IEEE Division I Director NTHU, and Prof. H. Sugimura, nanotubes for sensing and opto- Tokyo Institute of Technology Keio University electronic applications,” by Prof. Yokohama, Japan • “Au-in-Ga2O3 peapod nanodevices Y-Y Li, NCCU and Prof. H. Fujita, and their plasmonic application,” University of Tokyo Shinichiro Kimura by Prof. L-J Chou, NTHU, and Prof. Forty-five poster presentations were ED Japan Chapter Chair M. Suzuki, Kyoto University given within a 2 hour period, with Mr. Hitachi, Ltd., Sendai, Japan

REPORT ON THE 28TH WIMNACT HELD IN INDIA

The 28th IEEE EDS Mini-colloquium Chapter and co-hosted by the De- its benefits to members. There were on NAnometer CMOS Technology partment of Electrical Engineering, more than 50 researchers, working in (WIMNACT), was held in India and Indian Institute of Technology, Bom- devices and related areas, who attend- consisted of a series of three EDS bay, April 18, 2011, at the IIT Victor ed. After Prof. Jindal’s presentation the Mini-Colloquia (MQ) with invited Menezes Convention Center. Prof. remaining lecturers gave their talks: EDS Distinguished Lectures. The Ramgopal Rao of IIT Bombay and • Professor Jason Woo, Universi- MQs were organized by the IEEE ED/ ED SRC Vice-Chair welcomed the DL ty of California Los Angeles, “De- AP Bombay Chapter at IIT Bombay, speakers and attendees, followed by vice design and optimization of College of Engineering Pune and IIT a short address by Professor Juzer nanoscale CMOS technologies” Madras. These MQs followed soon Vasi, IIT Bombay. • Dr. Chandrasekhar Narayan, IBM after the EDS South Asia Chapters There were 6 technical talks in Research, Almaden, USA, “Nano- Meeting held in Mumbai, India. the program, with Professor Renuka technology storage” Jindal, EDS President, giving the first • Dr. Vivek De, Director of Circuits MQ-1 at IIT Bombay DL on “Nano FET Fluctuation Phys- Research Lab, Intel, USA, “Ener- The first in the series of MQs was or- ics,” beginning with an introduction to gy efficient designs with wide dy- ganized by the IEEE AP/ED Bombay the IEEE Electron Devices Society and namic range”

July 2011 ❍ IEEE Electron Devices Society Newsletter 19 2011. The full-day program featured 6 lectures and was attended by more than 140 participants, including faculty and students from various engineering colleges in Pune, as well as engineers and managers from industry and research institutions. The felicitation function at the start of the event was presided over by Professor Sahasrabudhe, Direc- tor of COEP, with Professor Arun Chandorkar of IIT Bombay introduc- A group of attendees and DL speakers at MQ-1, IIT Bombay ing the DL team and Renuka Jindal, the President of EDS who described the mission and vision of the IEEE ED Society. The program began with the Distinguished Lecture by Professor Renuka Jindal, EDS President and Professor at the University of Loui- siana at Lafayette, USA, on “From millibits to terabits per second and beyond – over 60 years of innovation.” The program continued with Distinguished Lecturers: • Dr. M.K. Radhakrishnan, NanoRel-Technical Consultants, “Challenges in nanoscale fault localization and analysis in advanced CMOS devices” Attendees and DL speakers of MQ-2 paused under the shades of a banyan tree on the COEP • Dr. Jakub Kedzierski, MIT Lincoln campus Labs, “The world’s most successful nanotechnology – silicon CMOS – and its future” • Professor Arun Chandorkar, IIT Bombay, “Process variability and its influence on circuit parame- ters of scaled down MOS structures” • Professor Maryam Shojaei, IIT Bombay, “Aspects of system integration in CMOS-based nano scale technologies” • Professor Jason Woo, UCLA, DL speakers Guido Groeseneken, Renuka Jindal and M. K. Radhakrishnan (back row, 2nd, 3rd USA, “Graphene channel MOS- and 4th from left) with the attendees of MQ-3 at IIT Madras FETs for VLSI, is it for real” The interaction with participants • Dr. Jakub Kedzierski, MIT Lincoln MQ-2 at COE Pune was very encouraging, initiating Labs, “The world’s most suc- The second mini-colloquium in this short technical discussions during cessful nanotechnology – silicon series, organized by the IEEE AP/ED the break. CMOS – and its future” Bombay Chapter, was held at one • Dr. M. K. Radhakrishnan, NanoRel, of the oldest and prestigious engi- MQ-3 at IIT Madras “Challenges in nanoscale fault neering colleges in India at Pune, The Mini-colloquium held at the In- localization and analysis in ad- on the campus of the College of dian Institute of Technology Madras, vanced CMOS devices” Engineering Pune (COEP), April 19, April, 20, 2011 was jointly organized

20 IEEE Electron Devices Society Newsletter ❍ July 2011 by the new IEEE ED Madras Chap- followed by Dr. Guido Groeseneken, tions by the attendees, especially ter and IEEE AP/ED Bombay Chap- IMEC, Belgium, on “Trends and Per- on career prospects in the electron ter. The event hosted by IIT Madras spectives for Electrical Characteriza- devices area, as well as technical as- was the first of its kind organized tion and Reliability Assessment in pects including new technology de- by the ED Madras Chapter. Profes- Advanced CMOS Technologies.” The velopments and research prospects. sor Amitava Dasgupta of IIT Madras third talk was given by Dr. M. K. Rad- welcomed the DLs and the gathering hakrishnan, NanoRel, on “Challenges M. K. Radhakrishnan at the IC & SR Auditorium of IIT and in Nanoscale Fault Localization & ED S Region 10 SRC Vice-Chair Dr. Mohankumar, ED Madras Chap- Analysis in Silicon CMOS Devices.” NanoRel ter Chair, briefed the audience on the More than 40 people, including fac- Bangalore, India formation of the new chapter. ulty members and students, attended Three DL talks were given begin- the lecturers. In the afternoon there Ramgopal Rao ning with Dr. Renuka Jindal, Univer- was an interaction session in which EDS Region 10 SRC Vice-Chair sity of Louisiana at Lafayette USA, the EDS President and the other Dis- IIT on “NanoFET Fluctuation Physics,” tinguished Lecturers answered ques- Bombay, India

REPORT ON THE IEEE EDS MINI-COLLOQUIUM HELD IN BOGOTA, COLOMBIA

On February 22, 2011, the ED Co- lombia Chapter held an IEEE EDS Mini-Colloquium at the Pontificia Universidad Javeriana. The total attendance was 70, mostly students. After an introductory overview of EDS, the MQ began with Dr. Fan Ren’s talk on “Excimer UV Laser Pro- cess for Semiconductor Electronic and Photonic Devices.” We were im- pressed by the resume of the speaker and great contrast with his clarity as a panelist that allowed him to reach all audience participants. He has very clear knowledge of the subject area that is at the forefront of technology. The second talk was delivered by EDS Distinguished Lecturers at Pontificia Universidad Javeriana, (left to right) Dr. Fan Ren, Fernando Guarin on, “SiGe Hetero- Dr. Subramanian Iyer and Dr. Fernando Guarin junction Bipolar Transistor “HBT” Re- liability Overview with a comparison tion,” which was very appropriate for Given that much of the audience was to III-V HBT’s.” In addition to his ex- the area of ED. The speaker showed comprised of students, it was a most tensive knowledge on the subject, the the results beyond a judicious and appropriate historical account of the speaker gave his talk in Spanish mak- systematic research methodology, development of reports up to current ing it easier for many of the students. by giving a clear approach on how technology. The speaker in addition The speaker’s ability to adapt to the to elaborate a doctoral thesis; very to his extensive knowledge seduced audience was admirable and moti- enlightening for the large group of the listeners with his enthusiasm. vated the participants to join the IEEE. students attending the lecture. Dr. Robinson Pino delivered a The session ended with Dr. Fernando Guarin speech titled, “High Resistivity III–V Subramanian Iyer’s talk, “Memory, ED Mid-Hudson Chapter Antimonide Based Compounds: Bulk Semiconductors and Microelectronics IBM Microelectronics Crystal Growth and Characteriza- at IBM in the last one hundred years.” Hopewell Junction, NY, USA

July 2011 ❍ IEEE Electron Devices Society Newsletter 21 REPORT ON THE IEEE EDS MINI-COLLOQUIUM HELD IN LIMA, PERU

The ED Peru Chapter, founded in with presentations by five interna- Ph.D., IBM Research and Devel- 2008, organized its first international tionally renowned IEEE EDS Distin- opment Center IEEE EDS Mini-Colloquium, at the guished Lecturers, who spoke on • “Outlook and Challenge in Elec- Engineering and Architecture Facul- several topics in the EDS fields of trostatic Discharge (ESD) Pro- ty of the “Universidad de San Mar- interest. tection of Modern and Future tín de Porres” in the Capital City of Jorge Tejada, ED Peru Chapter Integrated Circuits,” by Juin J. Lima, Peru, February 26, 2011. The Chair, opened the mini-colloquium Liou, Ph.D., EDS Vice-President event offered valuable knowledge, program by welcoming the orga- Regions/Chapters, University of nizing assistants and sharing re- Central Florida, USA cent chapter activities. Fernando • “Semiconductor Reliability Top- Guarín, Ph.D., IBM Microelectronics ics for Advanced CMOS Tech- Research and Development Cen- nologies,” by Fernando Guarín, ter, presented on the activities and Ph.D., IBM Microelectronics opportunities in becoming an IEEE • “Polymeric Thin Film Transistors: EDS member. Six lectures followed A Review On Fabrication and the opening presentations: Modeling,” by Magali Estrada, • “Advanced CMOS Process Inte- Ph.D, EDS Chair Subcommittee gration: Looking Beyond Conven- for Regions/Chapters-Latin Amer- tional Scaling,” by Ravi M. Todi, ica, CINVESTAV, Mexico • “Compact Model for Symmet- ric Doped Double-Gate MOSFETS New Developments,” by Anto- nio Cerdeira, Ph.D., CINVESTAV, Mexico. • “Leadership Skills for Young En- gineers and Scientist in 21st Cen- tury”, was offered by Ravi M. Todi as an IEEE EDS GOLD talk. The first EDS Mini-Colloquium to be held in Peru was a successful event, with a total attendance of 105 professionals, members, students and staff. At the end of a long work day, all showed their full satisfaction with the quality of the event. The cha- risma and the willingness of the lecturers to share their knowledge and expectations gave the attendees the opportunity to ask questions and interact with them throughout the day. The event was fully funded by the IEEE EDS and Universidad de San Martín de Porres.

Jorge Tejada ED Peru Chapter Chair Universidad de San Martín EDS Distinguished Lecturers, Fernando Guarin, Ravi Todi and Juin Liou de Porres (3rd, 4th & 5th, from left), with some attendees Lima, Perú

22 IEEE Electron Devices Society Newsletter ❍ July 2011 REPORT ON EDS MINI-COLLOQUIUM AND DISTINGUISHED LECTURE PROGRAMS IN INDIA

Several IEEE EDS Chapters from the eastern and southern parts of India (Calcutta, Bhubaneswara, National Institute of Science and Technology (NIST), Berhampur Student Chapter and the newly formed Madras Chap- ter), have shown a great interest in organizing DL and MQ programs with a motivation to spread the objective of IEEE and the Electron De- vices Society. The Nano-electronics theme of these DL/MQ are trying to focus and update the state of scientific and technical knowledge among the academic and student communities and also among the people in industry. These events will give them an opportunity to enhance their understanding and knowledge so that it may be effectively utilized in their respective working domains.

MQ in Bhubaneswara On December 28, 2010, the first MQ was jointly organized by the ED Bhu- baneswar Chapter, the ED Calcutta Chapter and ED NIST Student Chap- ter, under the direction of the IEEE Calcutta Section and the ED Madras DL talk at Muthayammal Engineering College (MEC), Rasipuram, Tamil Nadu Chapter of the IEEE Madras Section. Prof. Partha Sarka, Chair of the Bhu- baneswar Chapter and the Principal of the Gandhi Institute of Technolo- gy and Management, Bhubaneswar, took impressive efforts to organize the MQ and it was a great success. The event was supported by Mr. C. D Panda Chairman of the Govern- ing Body of the GITAM, Er. P. Mishra and Prof. Jitendriya Kumar Satpathy (Vice-Chancellor BPUT). The invited speakers were Prof. Hiroshi Iwai, To- kyo Institute of Technology, Japan; Prof. Ramgopal Rao IIT Bombay, In- Prof. Iwai (middle, first row) DL talk at SKP Eng. College, Thiruvannamalai, Tamuil Nadu dia; Prof Chandan Sarkar, Jadavpur University Kolkata, India; and Prof attendees received certificates to electronics themed MQ, inviting the Mohan Kumar, SKP Eng. College, recognize their participation. same speakers who presented in Bhu- Thiruvannamalai, Tamil Nadu. The baneswara. In addition to Prof. Majhi event was well attended by more MQ in NIST Berampur (NIST), Prof Ajit Panda, Dean, Aca- than 160 participants, travelling On December, 30, 2010, the ED NIST demic, was the main person behind from Bhubaneswar and beyond. All Student Chapter organized a Nano the event with full cooperation from

July 2011 ❍ IEEE Electron Devices Society Newsletter 23 the College Principal, Prof S. Mudali January 7, 2011, arranged by Dr. M. Chandan K.Sarkar and his administration and it too was Madheswaran, Principal, MEC, Prof. K. IEEE Calcutta Section Vice-Chair a great success. The MQ was well at- Gunasekaran, MEC, and Prof. Mohan tended by more than 200 academics Kumar, SKP. Prof. Iwai also gave a DL Partha Sarkar and students, who were given recog- at SKP Eng, College Thiruvannamalai, ED Bhubaneswar Chapter Chair nition certificates. Prof. Panda hoped January 8, 2011. to rejuvenate the chapter with the or- In conclusion, the EDS chapters Ajit Panda ED NIST Student Chapter Chair ganization of this MQ event. of eastern and southern India are working together to organize these Mohan Kumar DL Program in Tamil Nadu important initiatives with the objec- ED Madras Chapter Prof. Iwai gave several DLs during his tive of expanding the IEEE EDS out- visit to various institutes in Tamil Nadu reach. M. Madheswaran and motivated the academic communi- ED India Chapter Chair ties with his high caliber deliberations. Article contributions by: He delivered a DL talk at Muthayammal Hiroshi Iwai Ramgopal Rao Engineering College (MEC), Rasipuram, IEEE Division I Director Vice-Chair SRC-AP

CALL FOR NOMINATIONS - EDS CHAPTER OF THE YEAR AWARD

The EDS Chapter of the Year Award The winning chapter will receive The schedule for the award pro- is given each year based on the a certificate and check for $1,000 to cess is as follows: quantity and quality of the activities be presented at the IEEE Internation- and programs implemented by the al Electron Devices Meeting (IEDM). chapters during the prior July 1st – June 30th period. Nominations for the Action Date award can only be made by Chapter Call for Nominations E-mailed to Chapter 6/1 Partners, SRC Chairs/Vice-Chairs, or Chairs, Chapter Partners, SRC Chairs & SRC self-nominated by Chapter Chairs. Vice-Chairs The nomination form is available Deadline for Nominations 9/15 at http://eds.ieee.org/chapter-of-the- year-award.html or by contacting Regions/Chapters Committee Selects Winner Early-October Laura Riello ([email protected]) from Award given to Chapter Representative at 1st week of December the EDS Executive Office. the IEDM

REPORT ON THE EDS SOUTH-ASIA CHAPTERS MEETING

The IEEE Electron Devices Society ture plans of the Electron Devices Technical Talk programs organized. South-Asia Chapters Meeting was Society, especially in the region and The ED Bangalore Chapter success- held at IIT Bombay in Mumbai, In- congratulated the Chapters for their fully hosted the 2011 IVEC conference, dia, April 17, 2011, and hosted by past good performances. Two new sponsored by EDS. Two chapters, the the IEEE AP/ED Bombay Chapter. chapters were started this past year ED Bhubaneswar Chapter and NIST Most of the EDS Chapters in the – ED Madras and VIT Student Chap- Student Chapter at Behrampur, which South Asia region were represented ter at Vellore. were dormant for some time, were vi- at the meeting, which was lead by All chapter activities for the last brantly revived in 2010 and organized EDS President, Renuka Jindal. He year were reviewed, with many suc- DL-MQs. The VIT Student Chapter and described various activities and fu- cessful Distinguished Lecturer and ED Madras Chapter had their formal

24 IEEE Electron Devices Society Newsletter ❍ July 2011 During April 18-20, the ED/AP Bombay Chapter organized WIM- NACT-28, with three MQs: MQ-1 at IIT Bombay, MQ-2 at the College of Engineering Pune and MQ-3 at IIT Madras, with the cooperation of the ED Madras Chapter and IIT Madras. A report on WIMNACT 28 appears separately in this newsletter. More joint activities including out-reach programs are planned for the coming years. In order to effectively utilize these programs, especially the DL Mini-colloquia, it was decided that any chapters request- ing funding to the EDS Headquarters Sitting from left: Jason Woo (DL-UCLA), Mridula Gupta (Delhi Chapter), Renuka Jindal (EDS must send a copy of the request to President), M.K. Radhakrishnan (Region 10 SRC Vice-Chair), Jakub Kedzierski (DL-MIT). Standing the Region 10 SRC Chair and Vice- from left: Anil Kotantharayil (IITB), Partha Sarkar (Bhubaneswar Chapter), Bhadra Pokheral (Nepal Chapter) Ajit Panda (NIST Chapter), Mariam Shojaei (IITB), Sankara Reddy (Bangalore Chapter), Chairs, as well as all other Chapter M. Madheswaran (ED India Council Chapter), R. Ramgopal Rao (Region 10 SRC Vice-Chair), N. Chairs in this regional group. Mohankumar (Madras Chapter), Chandan Sarkar (Calcutta Chapter) and M. Kameswari (IITB) M.K. Radhakrishnan inauguration by Prof. Ramgopal Rao, tween all Chapters is planned to orga- Region 10 SRC Vice-Chair Region 10 SRC Vice-Chair. A closer nize future DL-MQs and similar activi- NanoRel collaboration and communication be- ties more effectively. Bangalore, India

July 2011 ❍ IEEE Electron Devices Society Newsletter 25 R EGIONAL AND C HAPTER N EWS

USA, CANADA Her team’s Ge QD SETs exhibited ED Central Texas significant Coulomb-blockade oscil- –by Thuy Dao & LATIN AMERICA lations with a peak-to-valley ratio The ED Central Texas Chapter held the (REGIONS 1–6, (PVCR) of 750 and negative differen- 3rd annual 1 day Solar Technology tial conductances with a PVCR of 12 Workshop on September 16, 2010, at 7 & 9) at room temperature. Incorporating Freescale Semiconductor in Austin, dense Ge QDs arrays into the gate Texas. The workshop is dedicated to dielectrics of poly-Si thin-film tran- bringing together experts in the con- sistors significantly enhances the vergence area of microelectronics and ED Mid-Hudson photoconductivity in the wavelength solar energy and was established with Fernando Guarin, Subramanian Iyer of 350–450 nm as well as the ther- the support of the IEEE Central Texas and Ravi M. Todi mal stability and transient respon- Section and Freescale Semiconductor On Monday January 31, 2011, the ED sivity, offering potential applications to provide a forum for learning and for Mid-Hudson Valley Chapter, New for optical modulators, sensors, and open discussion in all areas of Solar York, hosted Professor Pei-Wen Li switches. Technologies and their applications. from the Department of Electrical En- On Friday, March 4, 2011, Pro- The goals in developing this workshop gineering, National Central University, fessor Edmundo Gutierrez from the are three-fold: 1) provide background ChungLi, Taiwan, R. O. C. Electronics Department at the Na- understanding of the current and fu- Dr. Li delivered a talk entitled “Ge tional Institute of Astronomy, Optics, ture solar technologies focusing on Quantum Dots Nano Electronics and Physics and Electronics (INAOE), the fundamentals through invited pa- Photonics,” where she explained in Puebla, Mexico, visited our EDS pers and tutorials, 2) provide a forum how the newly emerging field of ze- Chapter and delivered an engaging for discussion to foster interaction ro-dimensional quantum dots (QDs), talk titled “Quantum confinement in and ideally generate insight to create enabled by materials nanoscience nano-metric devices under a mag- breakthrough solutions to pressing and nanotechnology, has opened up netic environment at room and cryo- problems, and 3) provide a venue for access to wide-ranging applications genic temperatures.” He presented attendees to network with others hav- in computing, photovolatics, photo- Experimental, theoretical, and simu- ing similar interests. The workshop nics, as well as in energy harvest- lation work on the electro-magnetic was attended by 109 engineers from ing and conversion. It was shown behavior of MOSFETs, Tri-gate Fin- academia and industry. The seminars that among the possible materials Fet’s, and SiGe HBT’s. Showing that given at the workshop included: choices for QDs, Ge-based QDs were the combined effect of a magnetic • “Advances in Silicon PV Produc- particularly attractive since they ex- field B, at different operating temper- tion Technologies” by Dr. Gopal- hibit considerable quantum confine- atures (300 K down to 77 K), induces an Rajeswaran, CEO, Moser Baer ment effect, which are much stron- an extra quantum confinement in re- Tech. & Group Chief Tech. Officer, ger than those of their counterpart Si gions as narrow as 1 nm or less. This Moser Baer India QDs because of Ge’s larger exciton extra confinement of electrons leads • “Unlocking the Potential of Distrib- Bohr radius. Thus, in principle, the to a better physical insight of the uted Generation” by Ron Van Dell, electronic structure around the band principle of uncertainty, which is ob- CEO, SolarBridge Technologies gap of Ge QDs should be more eas- served by strong current oscillations • “Reliability Challenges for Solar ily modified than for Si QDs, making and transmission/reflections of elec- Microinverters” by Paul Parker, them attractive for use in advanced trons. Under these operating condi- Director of Product Qualification optoelectronics applications. tions the electrical performance of & Reliability, SolarBridge Tech- A novel, CMOS compatible ap- these devices switches between a nologies proach for the generation of Ge QDs classical (analog) and quantum (digi- • “A Green Campus & PV Re- through selective thermal oxidation tal) behavior. A hypothesis, based on search” by Prof. Paul Yu, Associ- of SiGe-on-insulator layers was also wave-guide behavior device, was in- ate Vice Chancellor of Research presented. The feasibility of Ge QD troduced, which serves to predict the Initiatives, University of Califor- single electron transistors (SETs), development of a full digital semi- nia at San Diego floating-dot memory, and photo-de- conductor device. • “Overview of Konarka’s Manu- tecting devices were demonstrated. ~Fernando Guarin, Editor facturing Capability and Product

26 IEEE Electron Devices Society Newsletter ❍ July 2011 ED Santa Clara Valley –by Prasad Chaparala During the first Quarter of 2011, the IEEE ED Santa Clara Valley Chap- ter held three seminar meetings: Prof. Tsu-Jae King Liu, EECS Tsu-Jae King Liu Dept. of UC Berke- Dept. of EECS, UC Berkeley ley, Dr. Glenn Al- ers, UC Santa Cruz and Dr. Geert Vandenberge, IMEC. In January, Prof Liu’s seminar entitled, “Mechanical Computing EDS President-Elect, Paul Yu, talks with attendees at the Solar Technology Workshop Redux: Relays for Integrated Circuit Applications,” explained how power Applications” by Dr. Stuart Spitzer, trical characterization for the last 40 density has grown to be the domi- VP, Engineering, Konarka Technol- years. In 1981, he joined Arizona State nant challenge for continued CMOS ogies Inc. University, where his current interests technology scaling. As a result, • “Advanced Solar Technologies” are semiconductor devices, defects in there has been renewed interest by Dr. Betty Prince, CEO of New semiconductors, semiconductor main mechanical computing, particu- Energy Strategies International terial and device characterization, low larly for very-low-power integrated • “Plan for 100 GW of Solar in the power electronics, photovoltaics and circuit applications. Her presenta- Western US” by Mark Kapner, device modeling. He has written two tion began with an overview of a Senior Strategy Engineer, Aus- books, Advanced MOS Devices and reliable micro-relay technology that tin Energy Semiconductor Material and Device has been developed recently at UC • “The University of Texas So- Characterization, edited 11 books, has Berkeley. Relay-based circuit design lar Vehicles Team” by Prof. Gary written over 180 papers and 10 book was discussed, and demonstrations Hallock and Archie W. Straiton, chapters, holds 5 patents, supervised of functional relay logic circuits were Endowed Faculty Fellowship in 105 graduate students. presented. Finally, relay scaling for Engineering, The University of Prof. Schroder discussed how improved device density and per- Texas in Austin the first task during failure analysis formance was described, and the For more information on this is failure site location. This becomes energy efficiency benefit of a scaled event, please see the workshop web- progressively more difficult as the relay technology vs. a CMOS tech- site: http://www.ieee.org/stw. Next feature size of today’s devices con- nology with comparable minimum year’s workshop is planned for Sep- tinue to shrink, the device structure dimensions was discussed. tember 16, 2011. becomes more complex, consisting At the February meeting, a seminar of many metal layers, flip-chip bond- entitled “Photovoltaic Module Reli- ED Phoenix ing, etc., pushing many existing char- ability and Failure Analysis: Enduring –by Charles Weitzel acterization tools to the limits. Hi talk a storm,” by Prof. Alers from UC On Thursday, gave relevant examples of a variety Santa Cruz, described the challenges March 24, 2011, of techniques including: IDDQ test- associated with solar panel operation the IEEE Wave’s ing, laser stimulated defect localiza- over large variations in environment and Devices Phoe- tion methods, emission microscopy, and weather conditions., i.e. with- nix Chapter was microprobing, voltage contrast, opti- standing 0–100% humidity at –20 C to delighted to have cal beam induced resistance change, 100 C with voltages in excess of 1000 Professor Dieter and picosecond imaging circuit V and thousands of thermal cycles. Schroder give a analysis. It also described the way Therefore, predicting lifetime is no Dieter Schroder seminar on Failure in which well established techniques better than predicting the weather. Arizona State University Analysis of Semi- like mechanical probing have taken His tutorial reviewed several of the conductor Devices. on a second life as scanning probes qualification procedures used for as- Dr. Schroder has worked with semi- with submicron mechanical resolu- suring reliability of photovoltaic pan- conductor material and device election have been developed. els and the failures that result from

July 2011 ❍ IEEE Electron Devices Society Newsletter 27 these tests. The wide range of indoor 2011 IVNC and outdoor failure modes were sum- –by Soichiro Tsujino marized along with the failure analy- The 24th International Vacuum Na- sis techniques that are commonly noelectronics Conference (IVNC used to detect the failures. 2011) will be held in Wuppertal, Ger- At the third meeting held in March, many, July 18–22, 2011, under the Dr. Vandenberghe from IMEC, Bel- expert direction of Conference Chair- gium, gave a talk entitled, ”Lithogra- man, Dr. Günter Müller and the IVNC phy Options for 22 nm and Beyond.” International Steering Committee. In his presentation, the status and The IVNC is an important forum critical challenges of multiple pat- for actual reports and mutual discus- terning with 193 nm immersion sions on the latest experimental and lithography and EUV lithography Moreover the chapter is also in- theoretical advances and recent devel- were reviewed. The scaling race ac- volved in sharing the organization opments in the field of vacuum micro cording to Moore’s law is continuing of certain events, for instance some and nanoelectronics. The conference without any slow-down. The critical meetings are co-organized with the topics will focus on physics, chemis- layers in 45 nm technology are done European Community COST Ac- try, material science and fabrication by 193 nm immersion lithography. tions, where several events have techniques of cold electron sources for For 32 nm, it has become quite clear been deployed in Portugal. novel device applications. The sched- that also here 193nm immersion ule with a four-day scientific program litho will expose the critical layers, ED/CAS Switzerland will consist of an invited plenary, ten but already may require double pat- –by Shih-Chii Liu oral and two poster sessions. Several terning. For 22 nm, two candidates awards for outstanding contributions remain: Multiple patterning with will be given to young researchers. 193 nm immersion lithography and all the possible resolution enhance- ment tricks or EUV lithography. ~Adam M. Conway, Editor EUROPE, Shih-Chii Liu Tobi Delbruck MIDDLE EAST (ED Swiss (ED Swiss & AFRICA Chapter Chair) Chapter Treasurer) EGION (R 8) The IEEE ED/CAS Switzerland Chap- ter has elected two new officers. AP/MTT/ED Portugal Shih-Chii Liu (http://www.ini.ethz. For further information, visit the The AP/MTT/ED Portugal Chapter is ch/~shih/) and Tobi Delbruck (http:// conference website, http://www. mainly focused on high frequency www.ini.uzh.ch/~tobi/) from the In- ivnc2011.uni-wuppertal.de/ocs/ circuits and systems, with key mem- stitute of Neuroinformatics, Univer- index.php/IVNC2011/IVNC2011. bers being engineers and university sity of Zurich and ETH Zurich, are ~Jan Vobecky, Editor professors that work on radio fre- now the Chair and Treasurer of the quency systems. Chapter, respectively. They replace ASIA & PACIFIC The group has been quite active Hanspeter Schmid, the past ED/CAS in recent years, promoting the study Chair and Andreas Koschak, the for- (REGION 10) of high-frequency electronic circuits mer Treasurer. by organizing several symposia and Hanspeter Schmid was chosen ED Peking University meetings; the most recent ones, as a Distinguished Lecturer of the –by Runsheng Wang IEEE MTT – International Workshop IEEE Circuits and Systems Society The ED Peking University (PKU) Stu- Series on “RF Front-ends for Soft- and in March 2011 gave lectures dent Chapter held 2 DL talks recently. ware Defined and Cognitive Radio on “The Current-Mode Story” at On March 7, 2011, Prof. Juin J. Liou Solutions,” held at Aveiro Univer- ETH Zurich and on “Electrical and of University of Central Florida was sity, and the International Workshop Human Feedback” at Fachhoch- invited to deliver a DL lecture and on Antenna Technology – iWAT, held schule NordWest Schweiz (FHNW) short course entitled “Outlook and at the Technical University of Lisbon. Windisch. Challenges in Electrostatic Discharge

28 IEEE Electron Devices Society Newsletter ❍ July 2011 tor corporations. The title of his talk was on “CMOS Biosensing: Lots of Problems, Lots of Opportunities.” He motivated the subject by introducing very recent researches in biosensing based on CMOS technology. With mass production fast marching to 22 nm CMOS technology and beyond, Prof. Albert Chin (5th from right) pictured with Shanghai skyline at night we are approaching the information Prof. Ru Huang (5th from left), the Chapter resolution of the biological systems Advisor, Dr. Runsheng Wang (6th from right), This symposium fills the need for such as DNA and ion channels. Many the Chapter Chair and other members of the a conference that focuses on emerg- aspects of fundamental understand- ED Peking Student Chapter ing nonvolatile memory technolo- ing on CMOS interface with bio-mol- (ESD) Protection of Modern and gies and advances in existing non- ecules and cells are still lacking. In his Future Integrated Circuits.” In this volatile memory technologies, rather talk he addressed device operations 3-hour short course, he first showed than on a single selected technology. of chemoreceptive MOS for monitor- the ESD fundamentals and testing, The purpose of this conference is to ing ions, biomarker proteins, specific and then presented the ESD protection bring together leading researchers pathogen DNA, cellular action poten- designs and challenges for data com- in academia and industry with inno- tials, and exocytosis. Future direc- munication transceivers, high-voltage vative technologists and investing tions in co-location of electrochemical IC, low-voltage RFIC, nanowire tech- stakeholders in order to nurture a free and optical sensors and in nanowire nology and organic technology. There exchange of triumphs and challenges membrane penetration were also in- were about 60 attendees at the talk. of a variety of technologies. We hope troduced. The talk had 70 participants, Afterwards, Prof. Liou shared his re- to provide a forum for discussing all including students and 10 professors search experience with our chapter aspects of novel memory concepts. from local universities. members and attending students. The conference site is 1 hour There were three major events On March 17, 2011, Prof. Albert from Pudong International Airport held in Taiwan: Chin of National Chiao-Tung Univer- and 15 minutes from Hongqiao In- 1) The 2011 VLSI-TSA, sponsored by sity delivered a DL lecture entitled ternational Airport directly all by the IEEE EDS and SSCC was held “Low-Power High-Performance Log- subway. Attendees can make use of in Hsinchu, Taiwan, April 25–27, ic & Memory Devices for SoC.” In his the city’s excellent subway system 2011. It is the largest annual VL- talk, he shared with the audience the to travel from the airport to the site. SI-related conference in Taiwan. It pioneer work of this group on small- consists of two and a half days of EOT high-k, Ge CMOS, MONOS ED Taipei technical paper presentations and flash memory and RRAM technolo- –by Steve Chung a half-day workshop. The online gies. There were about 50 attendees The ED Taipei Chapter held an in- paper submission deadline was who engaged in a one-hour discus- vited talk on March 23rd for Prof. October 31, 2010. For more infor- sion with Prof. Chin after the talk. Edwin Kan from Cornell University, mation, please refer to http://vlsit- who was visiting as the Cornell del- sa.itri.org.tw/2011/General/. 2011 NVMTS egate to Taiwan, pursuing student ex- 2) The 4th IEEE International Nano- —by Shi Luping change programs and meeting with Electronics Conference (INEC) was The 2011 Non-Volatile Memory Tech- company leaders of semiconduc- held at Chang Gung University, nology Symposium (NVMTS 2011) will be held November 7–9, 2011, at the Shanghai Institute of Micro- system and Information Technology, CAS, (SIMIT) in Shanghai, China. The symposium will include reports on the latest research in non-volatile memory during its three-day program of speeches, invited papers and contributed papers. On Novem- ber 9th, there will be a poster session aimed towards graduate students The ED Taipei invited talk on March 23rd, (from the right) Prof. T-H. Hou, Seminar Chair (7th from and post-doctoral researchers. right), Prof. Edwin C. Kan, Speaker (middle) and participating professors and student

July 2011 ❍ IEEE Electron Devices Society Newsletter 29 Tao-Yuan, Taiwan, June 21–24, one Distinguished Lecture dur- EDS Vacuum Electronics Committee 2011. This major event is co-spon- ing the first quarter of 2011. The held its meeting at IISc. sored by the IEEE EDS with local DL by Prof. Pinaki Mazumder, EDS members organizing it. More University of Michigan, USA, on ED Calcutta information can be found on the “Beyond CMOS Technology and –by Atanu Kundu and C.K. Sarkar conference website, http://www. Evolutionary Architectures,” was The Department of Electronics inec2011.org.tw/index.html. attended by more than 50 people. & Communication Engineering, 3) The ED Taipei Chapter assisted in Dr. Deepak Sekar Principal Engineer Heritage Institute of Technology, organizing the EDS June AdCom at NuPGA Corporation, USA, gave a Kolkata and the IEEE ED Calcutta Meeting Series. The three-day talk on “ Resistive RAM: Technology Chapter jointly organized the 2011 event consisted of the MQ series, and Market Opportunities.” And the IEEE EDS Student Paper Confer- WIMNACT-29, held at Nation- third technical talk on “TCAD: Pres- ence (IESPC’11) at Heritage Institute al Chiao Tung University, in the ent State and Future Challenges,” of Technology, April 18, 2011. neighborhood of Science Park on was delivered by Terry Ma, Engi- The IESPC is a new initiative to May 27th and on May 28–29th neering Vice President of Synop- foster technological innovation and the EDS AdCom Meeting Series, sys, USA. excellence among the Undergradu- which included the EDS ExCom The XII IEEE International Vac- ate (UG) & Postgraduate (PG) Elec- Meeting, EDS Region 10 Chap- uum Electronics Conference 2011 tronics Engineering students and to ters Meeting, and EDS AdCom (2011 IEEE IVEC) was organized at encourage young engineers into re- Meeting, all held at the Grand Bangalore by EDS and was held at search activities related to electron- Hotel in Taipei. JN Tata Auditorium, Indian Institute ics engineering. ~Mansun J. Chan, Editor of Science, Bangalore. The confer- The program began with the in- ence, co-hosted by the ED Bangalore augural ceremony which was graced ED/SSC Bangalore Chapter was a great success, attract- by the presence of Prof. B. B. Paira –by Sankara Reddy ing vacuum electronics researchers (Director, Heritage Institute of Tech- The ED/SSC Bangalore Chapter from all over the world. In conjunc- nology), Prof. Chandan Kumar Sarkar organized two technical talks and tion with the conference, the IEEE (Chair, IEEE EDS, Calcutta Section), Prof. Probir Roy (Executive Director, Kalyan Bharti Trust), Prof. Dulal Chan- dra Ray (Joint Director, HITK), Prof. Sobhen Ray (Registrar, HITK), Prof. Bhaskar Gupta (HOD, Department of E.T.C.E., Jadavpur University), Prof. Anutosh Chatterjee (Ex. Profes- sor, HITK), Prof. Rabindranath Nandi (Department of E.T.C.E., Jadavpur University), Prof. Chayanika Bose (Department of E.T.C.E., Jadavpur University) and the faculty & staff of the Department of ECE, HITK. The conference consisted of paper presentation in 5 tracks: Embedded IEEE EDS Vacuum Electronics Committee members at the 2011 IVEC Systems, Microwave Engineering,

The patron of the event, Prof. B. B. Paira, HITK, and EDS Calcutta Chair, Prof. C. K. Sarkar, displaying the IESPC’11 memento for Terry Ma, with the audience of his technical talk at the ED/SSC Bangalore Chapter the session chairs

30 IEEE Electron Devices Society Newsletter ❍ July 2011 Wireless Communication, VLSI and cluding posters. The speakers invited Devices and Evolutionary Comput- were: Dr Hoe Tan, Australian National ing. A total of 37 papers were pre- University Canberra; Dr. P. Chakrabor- sented by UG and PG students from ti, Banaras Hindu University Varanasi; engineering colleges across India. Dr. M.K. Radhakrishnan, NanoRel Five students were awarded the best Bangalore; Dr. MykunthReddy, UNSW paper award, one in each track. The Australia and Dr. Mohankumar ED event concluded with the valedictory Madras Chapter. All participants and session and offers of thanks by Mr. invitees appreciated the floral wel- Formal inauguration of the ED Madras Chapter Atanu Kundu, HITK. come spread made of different types The conference was extremely of food grains and which used no ar- successful in bringing together en- tificial colors to match the IEEE and Rao, IIT Bombay and Region 10 SRC gineering students from various dis- Society logos. Vice-Chair on September 24, 2010. ciplines of ECE and electron device Other events organized by the Professors Amitava Dasgupta, Nandi- specialization. This platform enabled Chapter included an EDS Distin- ta Dasgupta and Enakshi Bhattacha- them to showcase their research guished Lecture by Prof. Hiroshi rrya of IIT Madras, as well as Prof. work and gave them the opportunity Iwai, Tokyo Institute of Technology Chandan Sarkar of Jadavpur Univer- to interact with experts in the field. on Nanoelectronics, January, 2, 2011 sity, attended the function held at Ho- and Dr Anand Mohan of ECIL Ban- tel Accord, Chennai. ED Delhi galore on CMOS VLSI Analog Fil- –by Manoj Saxena ters, February, 26, 2011. The Chapter ED VIT Student Chapter The ED Delhi Chapter, together with sponsored a series of activities at –by Partha Mallick Deen Dayal Upadhyaya College, Del- various institutions in India, which The VIT Student Chapter, Vellore, or- hi, organized a three day workshop on included International Conference ganized a one-day training program Frontiers of Physics, January, 21–23, ICMARS 2011 at the International on “Technology CAD,” January 8, 2011, at the University of Delhi, south Center for Radio Science, Rajastan; 2011. Mr. Amit Saini, Sr. Executive, campus. More than 300 participants the National Conference on Emerg- Integrated Microsystems, Bangalore, from various institutions attended the ing Trends in VLSI at Sathyabama India and Dr. Partha S. Mallick, of VIT, 11 expert lectures at the workshop. University, Chennai, January, 27–28, were the speakers who explained the 2011, the National Seminar on Na- theoretical and practical issues of ED India noelectronics at CMS Engineering device design using TCAD-Silvaco. –by M. Madheswaran College, Namakal, March, 5, 2011 Most of the participants were either The ED India Chapter organized a con- and the National Conference on from the ED VIT Student Chapter or ference on Nanoelectronics, ICONE Electronics Technology at Goa Engi- the IEEE ED Madras Chapter. 2011, held at Muthayammal Engineer- neering College, April, 17–18, 2011. ~M.K. Radhakrishnan, Editor ing College, Rasipuram, TamilNadu, India, February, 24–25, 2011. The con- ED Madras ED Japan ference, attended by more than 150 –by N Mohankumar –by Shin’ichiro Kimura participants, consisted of 5 invited The new ED Madras Chapter was for- First of all, on behalf of the IEEE ED talks and 40 paper presentations, in- mally inaugurated by Prof. Ramgopal Japan Chapter, we appreciate the heartfelt condolences to Japan and the Japanese people sent from the IEEE and Electron Devices Society. On January 27, 2011, the annual meeting of the ED Japan Chapter was held in Tokyo. Dr. Shin’ichiro Kimura, Japan Chapter Chair reported on 2010 chapter activities and plans for 2011. At the meeting, the 2010 EDS Japan Chapter Student Award was presented to 7 students who gave excellent presentations at the IEDM or Sym- posium on VLSI Technology held in 2010. The award winners are posted Invited Speakers and Guests in front of the 2011 ICONE floral welcome on the Japan Chapter’s homepage,

July 2011 ❍ IEEE Electron Devices Society Newsletter 31 Compound Semiconductor Devices sessions. He reported that there were no SiC papers this year and a small- er number of papers on new device structure, but pointed out there were more reliability related papers, which indicates researchers are shifting to a volume manufacturing phase. He also stated that there was a single session devoted to Graphene Devices, aiming for high frequency applications. Dr. Toshiaki Iwamatsu from Rene- sas Electronics covered Si related sessions. There were more papers from industries than academia: 17 Winners of the ED Japan Chapter Student Award from IBM, 12 from TSMC, with Pana- sonic and Renesas, Japan, present- ing 8 papers each. There was a single session devoted to SOI and FinFET, which coincided with the direction of the ITRS roadmap. 3D technology was also featured in a single session while HiK technology was migrated into a platform session. He noticed that there were more electrical char- acteristics discussions than just DL by Prof. John Robertson (first row, center) at Tokyo Institute of Technology, February 16, 2011 structure and process related mat- ters in the 3D technology session. (http://www.ieee-jp.org/japancouncil/ encouraged many discussions with After the IEDM feedback meeting chapter/ED-15/ed15_award.htm). the audience. we held the annual general meeting to The chapter meeting also includ- review activities of ED Kansai in 2010 ed the IEDM 2010 Report, with six ED Kansai and to discuss the one for 2011. We Japanese members of the IEDM pro- –by Michinori Nishihara also elected new chapter executive of- gram committee reporting on sum- The ED Kansai Chapter held a feed- ficers for 2011 and 2012 as follows: Dr. mary, topics and research trends of back meeting from the 2010 IEDM at Akira Takahashi of Sharp Corporation, their committees. This report is done Kansai University, Kansai University Chapter Chair; Prof. Shigehiko Sasa of for the benefit of members who Centenary Memorial Hall, Osaka, Ja- Osaka Institute of Technology (OIT), were not able to attend the IEDM pan, January 25, 2011, with 13 partici- Vice Chair; Dr. Hiroshi Kotaki of Sharp and attendance included about sixty pants from academia and industries. Corporation, Secretary and Prof. Toshi- members and non-members. Dr. Hidekazu Umeda of Panasonic hiko Maemoto of OIT as Treasurer. On the evening of January 27th, reported on the Quantum Power and ~Kazuo Tsutsui, Editor the EDS Japan Chapter held an executive meeting, welcoming Mr. Matt Loeb, Staff Director and Mr. Iwao Hyakutake, Director, Japan Opera- tions. This was a good opportunity to discuss issues, the status quo and future prospects for our chapter. Prof. John Robertson, Cambridge University, UK, gave a DL talk at To- kyo Institute of Technology, Yokoha- ma, February 16, 2011. His talk entitled, ‘Electronic Structure of Ge:GeO2 interfaces for future CMOS,’ included his recent research results and Feedback meeting from IEDM 2010 held at Kansai University on January 25, 2011

32 IEEE Electron Devices Society Newsletter ❍ July 2011 July 2011 ❍ IEEE Electron Devices Society Newsletter 33 EDS MEETINGS CALENDAR

(AS OF 31 MAY 2011)

THE COMPLETE EDS CALENDAR CAN BE FOUND AT OUR WEB SITE: HTTP://EDS.IEEE.ORG/EDS-MEETINGS- CALENDARS.HTML PLEASE VISIT!

July 4 - 7, 2011, T IEEE International Sympo- Problems of Electromagnetic and Acoustic culescu, E-Mail: [email protected], Deadline: 6/1/11, sium on the Physical and Failure Analy- Wave Theory, Location: PIAPMM, Lviv, Ukraine, www: http://www.imt.ro/cas sis of Integrated Circuits, Location: Songdo Contact: Mykhalyo Andriychuk, E-Mail: andr@ Conventia, Incheon, Korea, Contact: Jeongkyoung iapmm.lviv.ua Deadline: 7/10/11, www: http:// November 7 - 9, 2011, @ IEEE International Kim, E-Mail: [email protected], Deadline: www.ewh.ieee.org/soc/cpmt/ukraine/ Conference on Microwaves, Communica- 1/17/11, www: http://www.ieee.org/ipfa tions, Antennas and Electronic Systems, September 27 - 28, 2011, T Semiconduc- Location: David Intercontinental Hotel, Tel Aviv, Isra- August 1 - 3, 2011, T International Sym- tor Conference Dresden (SCD), Location: el, Contact: Ortra Ltd., E-Mail: [email protected], posium on Low-Power Electronics and Technische Universität Dresden, Hörsaalzentrum, Deadline: 6/15/11, www: http://www.comcas.org Design, Location: Fukuoka Convention Center, Dresden, Germany, Contact: Georg Schmidt, E- Fukuoka, Japan, Contact: Hiroshi Nakamura, Mail: [email protected], Deadline: November 30 - December 3, 2011, * IEEE E-Mail: [email protected], Deadline: 3/7/11, 4/4/11 www: http://www.gerotron.de/html/ Semiconductor Interface Specialists www: http://www.islped.org/ messen/scd.htm Conference, Location: Key Bridget Marriott Ho- tel, Arlington, TX, USA, Contact: John Robertson, September 7 - 10, 2011, T International Con- September 28 - 30, 2011, T International E-Mail: [email protected], Deadline: 7/24/11, ference on Simulation of Semiconductor Conference on Solid-State Devices and www: http://www.ieeesisc.org/ Processes and Devices, Location: Tokyo Materials, Location: Aichi Industry & Labor International Exchange Center, Tokyo, Japan, Center, Aichi, Japan, Contact: Shigeru Asari, E- December 5 - 7, 2011, * IEEE International Contact: Akira Hiroki, E-Mail: [email protected], Mail: [email protected], Dead- Electron Devices Meeting, Location: Hil- Deadline: 3/1/11, www: http://www.si.eei.eng. line: 5/13/11, www: http://www.ssdm.jp/ ton Washington and Towers, Washington, DC, osaka-u.ac.jp/sispad/2011/ USA, Contact: Phyllis Mahoney, E-Mail: phyl- October 3 - 6, 2011, * IEEE International SOI [email protected], Deadline: 6/24/11, www: September 11 - 16, 2011, T Electrical Over- Conference, Location: Tempe Mission Palms Ho- http://www.his.com/~iedm/general/future.html stress/Electrostatic Discharge Sympo- tel & Conference Center, Tempe, AZ, USA, Contact: sium, Location: Disneyland Hotel, Anaheim, CA, Joyce Hooper, E-Mail: [email protected], Deadline: December 12 - 14, 2011, T International USA, Contact: Lisa Pimpinella, E-Mail: lpimpinella 5/6/11, www: http://www.soiconference.org Conference on Field-Programmable @esda.org, Deadline: 1/14/11, www: http:// Technology, Location: India Habitat Center, www.esda.org October 9 - 11, 2011, * IEEE Bipolar/BiC- New Delhi, India, Contact: Kolin Paul, E-Mail: MOS Circuits and Technology Meeting, [email protected], Deadline: 6/8/11, www: September 12 - 17, 2011, T International Location: Global Learning Center, Atlanta, GA, http://www.cse.iitd.ernet.in/~icfpt11/index.html Conference on Electromagnetics in Ad- USA, Contact: Janice Jopke, E-Mail: ccsevents@ vanced Applications, Location: Torino Incon- comcast.net, Deadline: 5/2/11, www: http:// March 19 - 22, 2012, @ IEEE Internation- tra Conference Center, Torino, Italy, Contact: Ro- www.ieee-bctm.org/ al Conference on Microelectronic Test berto Graglia, E-Mail: [email protected], Structures, Location: Catamaran Hotel, San Di- Deadline: 2/25/11, www: http://www.iceaa.net October 9 - 14, 2011, T IEEE European Mi- ego, CA, USA, Contact: Wendy Walker, E-Mail: crowave Integrated Circuits Confer- [email protected], Deadline: 9/16/11, September 12 - 16, 2011, T European Solid- ence, Location: Manchester Central, Manchester, www: http://www.see.ed.ac.uk/icmts State Device Research Conference, Location: United Kingdom, Contact: Ian Hunter, E-Mail: Finlandia Hall, Helsinki, Finland, Contact: Tomi Man- [email protected], Deadline: 2/14/11, April 15 - 19, 2012, * IEEE International tyla, E-Mail: [email protected], [email protected], Deadline: www: http://www.eumweek.com Reliability Physics Symposium, Location: 4/11/11, www: http://www.essderc2011.org Hyatt Regency Orange County, Garden Grove, October 16 - 19, 2011, * IEEE Compound CA, USA, Contact: David Barber, E-Mail: dbarb- September 15 - 16, 2011, T IEEE Internation- Semiconductor IC Symposium, Location: [email protected], Deadline: Not Available, www: al Siberian Conference on Control and Hilton Waikoloa Village, Waikoloa, HI, USA, http://www.irps.org Communication, Location: Siberian Federal Contact: Lisa Boyd, E-Mail: [email protected], University, Krasnoyarsk, Russia, Contact: Oleg Deadline: 5/8/11, www: http://www.csics.org/ June 3 - 8, 2012, * IEEE Photovoltaic Spe- Stukach, E-Mail: [email protected], Deadline: cialists Conference, Location: TBD, Austin, 5/10/11, www: http://conf.sfu-kras.ru/sibcon October 16 - 20, 2011, * IEEE International TX, USA, Contact: Americo Forestieri, E-Mail: Integrated Reliability Workshop, Loca- [email protected], Deadline: Not Available, September 18 - 21, 2011, T IEEE Custom In- tion: Stanford Sierra Conference Center, South www: http://www.ieee-pvsc.org tegrated Circuits Conference, Location: Lake Tahoe, CA, USA, Contact: Rolf Geilenkeuser, Double Tree Hotel, San Jose, CA, USA, Contact: E-Mail: [email protected], June 12 - 14, 2012, @ IEEE Symposium on Melissa Widerkehr, E-Mail: melissaw@widerkehr. Deadline: 6/16/11, www: http://www.iirw.org VLSI Technology, Location: Hilton Hawaiian com, Deadline: 6/1/11, www: www.ieee.cicc.org Village, Honolulu, HI, USA Contact: Phyllis Ma- October 17 - 19, 2011, * International honey, E-Mail: [email protected], Dead- September 26 - 29, 2011, T IEEE International Semiconductor Conference, Location: Hotel line: Not Available, www: http://www.vlsisym- Seminar/Workshop on Direct and Inverse Sinaia, Sinaia, Romania, Contact: Cristina Bui- posium.org

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36 IEEE Electron Devices Society Newsletter ❍ July 2011