NTLGF3402P

MOSFET – Power, P-Channel, Schottky Diode, Schotty Barrier Diode, FETKY, DFN6 -20 V, -3.9 A, 2.0 A http://onsemi.com MOSFET

Features V(BR)DSS RDS(on) TYP ID MAX • Flat Lead 6 Terminal Package 3x3x1 mm −20 V 110 mW @ −4.5 V −3.9 A • Enhanced Thermal Characteristics • Low VF and Low Leakage Schottky Diode SCHOTTKY DIODE

• Reduced Gate Charge to Improve Switching Response VR MAXVF TYP IF MAX • This is a Pb−Free Device 20 V 0.36 V 2.0 A Applications • Buck Converter 2 5 132 • High Side DC−DC Conversion Circuits • Power Management in Portable, HDD and Computing 3 ° MOSFET MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit 654 4 Drain−to−Source Voltage VDSS −20 V Heatsink 1, 6 = Anode ± 2, 5 = Source Gate−to−Source Voltage VGS 12 V 3 = Gate ° Continuous Drain Steady TA = 25 C ID −2.7 A 1 6 4 = Drain/Cathode Current (Note 1) State ° TA = 85 C −2.0 ≤ ° t 10 s TA = 25 C −3.9 MARKING DIAGRAMS Power Dissipation Steady PD 1.6 W (Note 1) State T = 25°C A 1 3402 ≤ DFN6 t 10 s 3.0 AYWW ° CASE 506AH G Continuous Drain TA = 25 C ID −2.3 A 1 Current (Note 2) ° Steady TA = 85 C −1.7 State Power Dissipation P 1.14 W 3402 = Specific Device Code T = 25°C D (Note 2) A A = Assembly Location Y = Year m Pulsed Drain Current tp = 10 s IDM 11 A WW = Work Week ° G = Pb−Free Package Operating Junction and Storage Temperature TJ, TSTG −55 to C 150 Source Current (Body Diode) I 1.1 A S ORDERING INFORMATION ° Lead Temperature for Soldering Purposes TL 260 C (1/8″ from case for 10 s) Device Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum NTLGF3402PT1G DFN6 3000 / Tape & Reel Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free) Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NTLGF3402PT2G DFN6 3000 / Tape & Reel 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq (Pb−Free) [1 oz] including traces). †For information on tape and reel specifications, 2. Surface Mounted on FR4 Board using the minimum recommended pad size including part orientation and tape sizes, please (Cu area = 0.5 in sq). refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: May, 2019 − Rev. 1 NTLGF3402P/D NTLGF3402P

° SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Max Unit

Peak Repetitive Reverse Voltage VRRM 20 V

DC Blocking Voltage VR 20 V

Average Rectified Forward Current IF 2.0 A THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit ° Junction−to−Ambient – Steady State (Note 2) RqJA 110 C/W ≤ ° Junction−to−Ambient – t 10 s (Note 2) RqJA 58 C/W ° Junction−to−Ambient – Steady State (Note 3) RqJA 79 C/W ≤ ° Junction−to−Ambient – t 10 s (Note 3) RqJA 41 C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

° MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS m Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 A −20 V ° Drain−to−Source Breakdown Voltage V(BR)DSS/TJ −9.0 mV/ C Temperature Coefficient ° m Zero Gate Voltage Drain Current IDSS TJ = 25 C −1.0 A V = −16 V, V = 0 V DS GS ° TJ = 125 C −5.0 ± ± Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 12 V 100 nA ON CHARACTERISTICS (Note 4) m Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 A −0.6 −2.0 V ° Gate Threshold VGS(TH)/TJ 2.7 mV/ C Temperature Coefficient W Drain−to−Source On−Resistance RDS(on) VGS = −4.5, ID = −2.7 A 110 140 m

VGS = −2.5, ID = −1.0 A 190 225

Forward Transconductance gFS VDS = −10 V, ID = −2.7 A 4.8 S CHARGES AND CAPACITANCES

Input Capacitance CISS 230 350 pF VGS = 0 V, f = 1.0 MHz, Output Capacitance COSS 105 225 VDS = −10 V Reverse Transfer Capacitance CRSS 40 75

Total Gate Charge QG(TOT) 3.8 10 nC

Threshold Gate Charge QG(TH) 0.32 VGS = −4.5 V, VDS = −10 V, I = −2.7 A Gate−to−Source Charge QGS D 0.7

Gate−to−Drain Charge QGD 1.6 SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time td(ON) 6.2 15 ns

Rise Time tr 22 30 VGS = −4.5 V, VDD = −16 V, I = −2.7 A, R = 2.4 W Turn−Off Delay Time td(OFF) D G 25 45

Fall Time tf 34 60 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.

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° MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS ° Forward Diode Voltage VSD VGS = 0 V, IS = −1.1 A TJ = 25 C −0.8 −1.2 V

Reverse Recovery Time tRR 53 ns

Charge Time ta 15 VGS = 0 V, IS = −1.1 A , dI /dt = 100 A/ms Discharge Time tb S 38

Reverse Recovery Charge QRR 37 nC ° SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit

Maximum Instantaneous VF IF = 0.1 A 0.32 0.34 V Forward Voltage IF = 1.0 A 0.36 0.39 ° Maximum Instantaneous IR VR = 5 V, TJ = 100 C 12 mA Reverse Current m VR = 10 V 70 A

VR = 20 V 225 6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures.

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TYPICAL P−CHANNEL PERFORMANCE CURVES ° (TJ = 25 C unless otherwise noted)

6 6 −2.8 V ° ≥ −2.6 V TJ = 25 C VDS −10 V 5 5 VGS = −3 V to −10 V −2.4 V 4 4

3 −2.2 V 3

2 2 100°C −2 V ° DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS) 25 C

D, D, I I 1 −1.8 V 1 − − −1.6 V T = −55°C 0 0 J 0 0.4 0.8 1.2 1.6 2 2.4 2.8 1 1.52 2.5 3 3.5 4

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ) ) W W 0.25 ° ID = −2.7 A TJ = 25 C ° TJ = 25 C 0.2 0.2

VGS = −2.5 V

0.15 0.1 SOURCE RESISTANCE ( SOURCE RESISTANCE SOURCE RESISTANCE ( SOURCE RESISTANCE − − TO TO

− 0.1 − VGS = −4.5 V DRAIN DRAIN

0 0.05 243569107 8 1.5 2.5 3.5 DS(on), DS(on), R −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) R −ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and Voltage Gate Voltage

1.5 10000 V = 0 V ID = −2.7 A GS VGS = −4.5 V ° TJ = 150 C 1000 SOURCE − TO

− 1 , LEAKAGE (nA) DRAIN

100 DSS I

− ° TJ = 100 C DS(on), R RESISTANCE (NORMALIZED) RESISTANCE

0.5 10 −50−25 0 25 5075100 125 150 5 10 15 20 ° −TJ, JUNCTION TEMPERATURE ( C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current Temperature vs. Voltage

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TYPICAL P−CHANNEL PERFORMANCE CURVES ° (TJ = 25 C unless otherwise noted) 700 6 12 ° VDS = 0 V VGS = 0 V TJ = 25 C 600 10 CISS QT 500 4 −VDS −VGS 8 400 6

QGS QGD (V) SOURCE VOLTAGE SOURCE VOLTAGE (V) SOURCE VOLTAGE

300 − −

4 TO TO 2 CRSS − 200 − C, CAPACITANCE (pF) C, CAPACITANCE C OSS ID = −2.7 A 2 GATE DRAIN

100 ° TJ = 25 C GS, DS, V 0 0 0 V − 105 0 51015 20 01234− −VGS −VDS Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Gate−to−Source and Figure 7. Capacitance Variation Drain−to−Source Voltage vs. Total Charge

100 10 tf VGS = 0 V td(off) tr

° ° TJ = 100 C TJ = 25 C

10 1 t d(on) ° TJ = 150 C t, TIME (ns)

VDS = −16 V

I = −2.7 A , SOURCE CURRENT (AMPS) D S I

V = −4.5 V − ° GS TJ = −55 C 1 0.1 1 10 100 0.4 0.50.6 0.7 0.8 0.9 1.0

RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance

1

D = 0.5

0.2 0.1 0.1 0.05

0.02 0.01 0.01

Single Pulse 0.001 0.000001 0.000010.0001 0.001 0.01 0.1 1 10 100 1000 EFFECTIVE TRANSIENT THERMAL RESPONSE t, TIME (s) thja(t),

R Figure 11. FET Thermal Response

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° TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25 C unless otherwise noted)

10 10

° TJ = 100 C

T = 125°C 1 J 1

° TJ = 100 C CURRENT (AMPS) ° CURRENT (AMPS) ° TJ = 25 C TJ = 125 C , INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD , INSTANTANEOUS F F I ° I ° TJ = −40 C TJ = 25 C 0.1 0.1 0.10 0.30 0.50 0.10 0.30 0.50

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 12. Typical Forward Voltage Figure 13. Maximum Forward Voltage

1E+0 1E+0

100E−3 100E−3 ° ° TJ = 125 C TJ = 125 C

10E−3 10E−3 ° TJ = 100 C ° TJ = 100 C 1E−3 1E−3

100E−6 REVERSE CURRENT (AMPS) 100E−6 ° TJ = 25 C R, I T = 25°C J REVERSE CURRENT (AMPS) MAXIMUM

10E−6 R, I 10E+0 0 10 20 0 10 20

VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Typical Reverse Current Figure 15. Maximum Reverse Current

3.5 1.8 freq = 20 kHz 1.6 square wave 3 dc p 1.4 Ipk/Io = dc 2.5 Ipk/Io = 5 square wave 1.2 Ipk/Io = 10 2 1 Ipk/Io = p Ipk/Io = 20 0.8 1.5 Ipk/Io = 5 0.6 1 Ipk/Io = 10 0.4 0.5 Ipk/Io = 20 0.2 0 0 AVERAGE FORWARD CURRENT (AMPS) FORWARD AVERAGE , AVERAGE POWER DISSIPATION (WATTS) POWER DISSIPATION , AVERAGE

O, 25 456585 105 125 145 010.5 1.52 2.5 3 3.5 I FO

° P TL, LEAD TEMPERATURE ( C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 16. Current Derating Figure 17. Forward Power Dissipation

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1

D = 0.5

0.2 0.1 0.1 0.05

0.02 0.01 0.01

Single Pulse 0.001 0.000001 0.000010.0001 0.001 0.01 0.1 1 10 100 1000 EFFECTIVE TRANSIENT THERMAL RESPONSE t, TIME (s) thja(t),

R Figure 18. Thermal Response Junction−to−Ambient

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PACKAGE DIMENSIONS

DFN6 3*3 MM, 0.95 PITCH CASE 506AH−01 ISSUE O

A NOTES: D 1. DIMENSIONS AND TOLERANCING PER ASME B Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. PIN 1 4. COPLANARITY APPLIES TO THE EXPOSED REFERENCE PAD AS WELL AS THE TERMINALS.

ÇÇÇ E MILLIMETERS

2X ÇÇÇ DIM MIN NOM MAX A 0.80 0.90 1.00

0.15 C A1 0.00 0.03 0.05 ÇÇÇ A3 0.20 REF 2X b 0.35 0.40 0.45 0.15 C ÇÇÇ D 3.00 BSC TOP VIEW D2 2.40 2.50 2.60 E 3.00 BSC 0.10 C E2 1.50 1.60 1.70 e 0.95 BSC A K 0.21 −−− −−− 6X L 0.30 0.40 0.50 0.08 C SEATING (A3) PLANE C SIDE VIEW A1 SOLDERING FOOTPRINT* D2 0.450 6X L e 4X 0.0177 0.950 0.0374 13

E2 6X K 3.31 1.700 0.130 0.685 64

6X b (NOTE 3) 0.10 C AB

BOTTOM VIEW 0.05 C 2.60 0.63 0.1023 0.025 mm SCALE 10:1 ǒ Ǔ inches

FETKY is a registered trademark of International Rectifier Corporation.

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