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Diluted Magnetic Semiconductors

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Diluted Magnetic Semiconductors Introduction to Dilute Magnetic Semiconductors Nan Zheng∗ Course: Solid Sate II, Instructor: Ebio Dagotto, Semester: Spring 2008, Department of Physics and Astronomy, The University of Tennessee Knoxville (Dated: April 13, 2008) This paper begins with a brief introduction to the field of spintronics and dilute magnetic semi- conductor (DMS), the second part discusses in detail on three typical DMS materials{(Ga,Mn)As, (Ga,Mn)N and Transition metal doped oxide. Next mechanism of DMS ferromagnetism along with its magneto transport properties are discussed. Following that, an important sample preparation technique in DMS{ Molecular Beam Epitaxial (MBE) { will be presented. Finally, conclusion and outlook are made towards the future study on DMS. PACS numbers: I. BRIEF INTRODUCTION: II. DMS MATERIALS DMS AND SPINTRONICS Two major criteria are considered to select the most promising materials for semiconductor spintronics. First, the ferromagnetism should be retained to practical tem- Since late 1980s, people have noticed that in many peratures namely room temperature. Second, it would semiconductor crystals, substitution of a transition metal be a major advantage if there were already an existing element for a host element adds local magnetic moments technology base for the material in other applications. to the systems's low-energy degrees of freedom[1, 2]. As early as late 1960 to early 1970, Oxide doped with These doped materials are known as dilute magnetic Eu2+[3] and spinel structured composite (for example, semiconductors (DMSs), where usually a transition el- ZnCr Se [4]) are studied as magnetic semiconductors. ement is substituted on a small fraction, x, of a host 2 4 However, structures of those composites are different semiconductor element sites. The study of DMS became from Si or GaAs, the crystals are very hard to produce flourished in recent ten years since high quality samples in experiment, their low Curie temperature Tc (50K or are available through experiment. It is widely believed lower), strong insulation and poor semiconducting trans- that DMS are ideal material for spintronics. The fol- port property[5] further hampered their value in applica- lowing paragraph will explain what is spintronics and its tion. applications. Later on, studies have been spreaded on dilute mag- netic semiconductors including transition metal (mainly The term "spintronics" stands for spin transition elec- Mn) doped II-VI, IV-VI and II-V compound semiconduc- tronics. As well known today, integrated circuits and tors, typical examples are: II-VI: (Zn,Mn)Se, (Cd,Co)Se, high-frequency devices, used for information processing (Hg,Fe)Te; IV-VI: (Sn,Mn)Te, (Pb,Mn)Te, (Pb,Eu)Te, and communications, have had great success through etc. Mn doped II-VI semiconductors are especially fo- controlling the charge of electrons in semiconductors. cused on, typical materials are (Zn,Mn)Se etc. Mass storage of information { indispensable for informa- For a long time, due to much lower solubility of mag- tion technology { is carried out by magnetic recording netic ions in III-V semiconductors compared to II-VI (hard disks, magnetic disks...) using electronic spins in semiconductors, along with its poor stability, not much ferromagnetic materials. It is then quite natural to ask if studies are done on III-V DMSs. A breakthrough was both the charge and spin of electrons can be used at the made by using molecular beam epitaxy (MBE), a thin- same time to enhance the performance of devices. This film growth technique in vacuum that allows one to work is the main idea of spintronics, which is widely expected far from equilibrium. Using MBE technique, Munekata to be the future solution to downsize current microelec- etc. successfully made III-V material InMnAs, and fer- tronic devices into size of even nanometers. The realiza- romagnetism was observed in p type InMnAs[2]. Based tion of functional spintronic devices requires materials on the work above, in 1996, Ohno etc. made the first with ferromagnetic ordering at operational temperatures Mn doped dilute magnetic semiconductor (Ga,Mn)As[6]. compatible with existing semiconductor materials. Be- This material was grown as a Ga1−xMnxAs(x = 0:015 ∼ ing a ferromagnetic semiconductor with favorable exper- 0:017) thin film on a semi-insulated GaAs(001) substrate. imental properties, dilute magnetic semiconductors will The fraction of Mn ions in the sample was as high as promisingly suit this need. (3 ∼ 7) × 1020cm−1, which was far higher than the sol- ubility of GaAs in thermal equilibrium. Furthermore, because that (Ga,Mn)As were grown on GaAs film, its crystal structure has a good similarity to GaAs. Due to ∗Electronic address: [email protected] its remarkable properties, (Ga,Mn)As attracted a lot of 2 FIG. 1: Computed values of Curie temperatures T for various c FIG. 2: Curie temperature vs. Mn concentration for DMS p-type semiconductors containing 5% of Mn per cation (2.5% (Ga,Mn)As[14] per atom) and 3:5 × 1020 holes per cm3[12, 13] interests on DMS studies as soon as it appeared in the again to non-metal[15]. experiment. Study of origin of ferromagnetism in (Ga,Mn)As has Typically the observed curie temperature of DMS is always attracted lots of attentions. H. Ohno etc be- lieves that it is hole charges who lead to ferromagnetism mostly below 50K, the highest Tc on (Ga,Mn)As is only 110K. So an important step for DMS to be applied in in (Ga,Mn)As[6]. They discovered that the number of Mn ions in (Ga,Mn)As is of the same order compared reality is to improve its Tc. Many new DMS materi- als are discovered in recent research, for example Mn to those of hole charges, which supported their opin- ion. Nowadays, it is still not fully understood the rea- doped CdGeP2[7], CrAs[8], (Ti,Co)O2[9], (Zn,Co)O[10] and (Zn,Ni)O[11], etc. In 2000, Dietl explained curie son of ferromagnetism in (Ga,Mn)As. Based on the study of (Ga,Mn)As, Other DMS materials with even temperature in Ga1−xMnxAs and Zn1−xMnxTe theoret- ically using Zener Model, and predicted the existence of higher Curie temperature has been discovered, for exam- room temperature DMSs, as in Fig. 1[12]. ple, (Ga,Mn)N, Co: TiO2 etc. However, they are all not Recent research are mainly focused on the following as good as (Ga,Mn)As in terms of experimental capabil- DMS materials: ity and compatibility with current semiconductor indus- try. Till now, (Ga,Mn)As is the most promising DMS material in practice. A. (Ga,Mn)As GaAs are already in use in a wide variety of electronic B. (Ga,Mn)N equipment in the form of electronic and optoelectronic devices, including cellular phones, compact disks, and in In Dietl's theoretical calculation, Curie temperature of many other applications. Therefore, the introduction of Mn doped GaN is the highest among various semicon- magnetic semiconductors based on GaAs opens up the ducting compound, thus (Ga,Mn)N has a wide spread possibility of using a variety of magnetic phenomena not interests in researchers. In 2001, Zajat etc made highly present in conventional nonmagnetic GaAs material in doped (Ga,Mn)N using an ammonothermal method, the optical and electrical devices already established. which has paramagnetism, and they believe that p type In 1996, Ohno firstly used MBE technique to produce (Ga,Mn)N can gain ferromagnetism[16]. In the same Ga1−xMnxAs thin film with a largely enhanced solubil- year, Reed etc reported that they grew a 2µm thick single ity of the order of 1020cm−1. Through study of its mag- crystal on (0001) sapphire substrates using metal organic netic transportation, it was found that the Curie tem- chemical vapor deposition (MOCVD) method, and then perature varied as a function of doping factor x, and a laser deposition technique was used to deposit Mn on its behavior satisfied Tc = 2000x ± 10K[6]. Later F. the Nitride samples[17]. Mn doping was achieved by de- Matsukura etc discovered that the Curie temperature of position and annealing at different temperatures ranging (Ga,Mn)As reached its highest 110K when x = 0:05, from 250{800◦C. The experiment implies that Curie tem- as shown in Fig. 2. When Mn concentration was re- perature of grown samples will depend on growing and duced, Curie temperature Tc would also decrease, when annealing conditions, which are between 220∼370K[18]. Mn concentration x went below 0.005, ferromagnetism Theodoropoulou etc used a similar method and achieved would disappear[14]. Moreover, as Mn concentration in Mn doped P type GaN, with a high dose of 3∼5%. The (Ga,Mn)As increases, the transportation properties ex- observed Curie temperature is lower than theoretical pre- perienced series of changes, i.e., non-metal to metal and dictions, the author believes it is due to lower concentra- 3 FIG. 4: Room temperature hysteresis for bulk ZnO(Sn) im- planted with 3 at.% Mn[1] FIG. 3: Magnetization vs. temperature for (Ga,Mn)N sample grown by MBE with ∼9 at.% Mn. The extrapolation of the curve is based on a mean-field approximation[20, 21] Co doped TiO2 is also observed to have room tem- perature ferromagnetism. In 2001, Matsumoto reported that Co:TiO2 (doped Co below 5%) film made by tion of holes[19]. Fig. 3 shows the temperature depen- PLD displays room temperature ferromagnetism, and its dence of the magnetization for a sample with 9 at.% Mn, Curie temperature Tc > 400K[9]. Another experiment yielding an estimated Tc of 940K using a mean-field ap- achieved greater than 300K Curie temperatue in the same proximation. material but made by oxygen plasma assisted molecular beam epitaxy (OPA-MBE)[27].
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