Many-Body Correlations and Excitonic Effects in Semiconductor Spectroscopy
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Xeu3+ Phosphors: X‑Ray Absorption and Emission Studies
www.nature.com/scientificreports OPEN Correlation among photoluminescence and the electronic and atomic 3+ structures of Sr2SiO4:xEu phosphors: X‑ray absorption and emission studies Shi‑Yan Zheng1,2, Jau‑Wern Chiou3*, Yueh‑Han Li3, Cheng‑Fu Yang4, Sekhar Chandra Ray5*, Kuan‑Hung Chen1, Chun‑Yu Chang1, Abhijeet R. Shelke1, Hsiao‑Tsu Wang1, Ping‑Hung Yeh1, Chun‑Yen Lai6, Shang‑Hsien Hsieh7, Chih‑Wen Pao7, Jeng‑Lung Chen7, Jyh‑Fu Lee7, Huang‑Ming Tsai7, Huang‑Wen Fu7, Chih‑Yu Hua7, Hong‑Ji Lin7, Chien‑Te Chen7 & Way‑Faung Pong1* 3+ 3+ 3+ A series of Eu ‑activated strontium silicate phosphors, Sr2SiO4:xEu (SSO:xEu , x = 1.0, 2.0 and 5.0%), were synthesized by a sol–gel method, and their crystalline structures, photoluminescence (PL) behaviors, electronic/atomic structures and bandgap properties were studied. The correlation among these characteristics was further established. X‑ray powder difraction analysis revealed the formation of mixed orthorhombic α’‑SSO and monoclinic β‑SSO phases of the SSO:xEu3+ phosphors. When SSO:xEu3+ phosphors are excited under ultraviolet (UV) light (λ = 250 nm, ~ 4.96 eV), they emit yellow (~ 590 nm), orange (~ 613 nm) and red (~ 652 and 703 nm) PL bands. These PL emissions 5 7 typically correspond to 4f–4f electronic transitions that involve the multiple excited D0 → FJ levels (J = 1, 2, 3 and 4) of Eu3+ activators in the host matrix. This mechanism of PL in the SSO:xEu3+ phosphors is strongly related to the local electronic/atomic structures of the Eu3+–O2− associations and the bandgap of the host lattice, as verifed by Sr K‑edge and Eu L3‑edge X‑ray absorption near‑edge structure (XANES)/extended X‑ray absorption fne structure, O K‑edge XANES and Kα X‑ray emission 3+ spectroscopy. -
Decoherence in Optically Excited Semiconductors: a Perspective from Non-Equilibrium Green Functions
Decoherence in Optically Excited Semiconductors: a perspective from non-equilibrium Green functions by Kuljit Singh Virk A thesis submitted in conformity with the requirements for the degree of Doctor of Philosophy Graduate Department of Physics University of Toronto Copyright c 2010 by Kuljit Singh Virk Abstract Decoherence in Optically Excited Semiconductors: a perspective from non-equilibrium Green functions Kuljit Singh Virk Doctor of Philosophy Graduate Department of Physics University of Toronto 2010 Decoherence is central to our understanding of the transition from the quantum to the classical world. It is also a way of probing the dynamics of interacting many-body systems. Photoexcited semiconductors are such systems in which the transient dynamics can be studied in considerable detail experimentally. Recent advances in spectroscopy of semiconductors provide powerful tools to explore many-body physics in new regimes. An appropriate theoretical framework is necessary to describe new physical effects now accessible for observation. We present a possible approach in this thesis, and discuss results of its application to an experimentally relevant scenario. The major portion of this thesis is devoted to a formalism for the multi-dimensional Fourier spectroscopy of semiconductors. A perturbative treatment of the electromagnetic field is used to derive a closed set of differential equations for the multi-particle correlation functions, which take into account the many-body effects up to third order in the field. A diagrammatic method is developed, in which we retain all features of the double-sided Feynman diagrams for bookkeeping the excitation scenario, and complement them by allowing for the description of interactions. We apply the formalism to study decoherence between the states of optically excited excitons embedded in an electron gas, and compare it with the decoherence between these states and the ground state. -
Determination of Exciton Binding Energy
Journal of Luminescence 132 (2012) 345–349 Contents lists available at SciVerse ScienceDirect Journal of Luminescence journal homepage: www.elsevier.com/locate/jlumin Photoluminescence study of polycrystalline CsSnI3 thin films: Determination of exciton binding energy Zhuo Chen a,b, Chonglong Yu a,b, Kai Shum a,b,n, Jian J. Wang c, William Pfenninger c, Nemanja Vockic c, John Midgley c, John T. Kenney c a Department of Physics, Brooklyn College of CUNY, Brooklyn, NY 11210, United States b The Graduate Center of CUNY, 365 5th Avenue, New York, NY 10016, United States c OmniPV Inc., 1030 Hamilton Court, Menlo Park, CA 94025, United States article info abstract Article history: We report on the determination of exciton binding energy in perovskite semiconductor CsSnI3 through Received 13 May 2011 a series of steady state and time-resolved photoluminescence measurements in a temperature range of Received in revised form 10–300 K. A large binding energy of 18 meV was deduced for this compound having a direct band gap 12 July 2011 of 1.32 eV at room temperature. We argue that the observed large binding energy is attributable to the Accepted 2 September 2011 exciton motion in the natural two-dimensional layers of SnI tetragons in this material. Available online 10 September 2011 4 & 2011 Elsevier B.V. All rights reserved. Keywords: Exciton Radiative emission Perovskite semiconductor Photoluminescence 1. Introduction accurately determined by the low temperature absorption mea- surements in which 1s and 2s excitonic absorption peaks were Wannier -
General Formalism for Excitonic Absorption Edges in Confined Systems with Arbitrary Dimensionality P
General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality P. Lefebvre, Philippe Christol, H. Mathieu To cite this version: P. Lefebvre, Philippe Christol, H. Mathieu. General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality. Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C5), pp.C5-377-C5-380. 10.1051/jp4:1993579. jpa-00251666 HAL Id: jpa-00251666 https://hal.archives-ouvertes.fr/jpa-00251666 Submitted on 1 Jan 1993 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE IV Colloque C5,supplement au Journal de Physique 11, Volume 3, octobre 1993 General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality P. LEFEBVRE, l? CHRISTOL and H. MATHIEU Groupe d'Etudes des Semiconducteurs, CNRS, Universitk Montpellier I& Case coum'er 074, 34095 Montpellier cedex 5, France A metric space with a noninteger dimension a (1 < a) is used to describe bound and unbound states of strongly anisotropic Wannier-Mott excitons, such as those confined in semiconductor superlattices, quantum wells and quantum-well wires. Indeed, the relative motion of the electron- hole pair which constitutes such excitons can never be considered strictly ID, 2D or 3D. -
Influence of Ultrafast Carrier Dynamics on Semiconductor Absorption Spectra Henni Ouerdane
Influence of Ultrafast Carrier Dynamics on Semiconductor Absorption Spectra Henni Ouerdane To cite this version: Henni Ouerdane. Influence of Ultrafast Carrier Dynamics on Semiconductor Absorption Spec- tra. Atomic Physics [physics.atom-ph]. Heriot Watt University, Edinburgh, 2002. English. tel- 00001905v2 HAL Id: tel-00001905 https://tel.archives-ouvertes.fr/tel-00001905v2 Submitted on 1 Oct 2003 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. INFLUENCE OF ULTRAFAST CARRIER DYNAMICS ON SEMICONDUCTOR ABSORPTION SPECTRA Henni Ouerdane Submitted for the Degree of Doctor of Philosophy at Heriot-Watt University on completion of research in the Department of Physics November 2001. This copy of the thesis has been supplied on the condition that anyone who consults it is understood to recognise that the copyright rests with its author and that no quo- tation from the thesis and no information derived from it may be published without the prior written consent of the author or the university (as may be appropriate). I hereby declare that the work presented in this the- sis was carried out by myself at Heriot-Watt University, Edinburgh, except where due acknowledgement is made, and has not been submitted for any other degree. -
Quantitative Photoluminescence Studies in A-Si:H/C-Si Solar Cells
Zur Homepage der Dissertation Quantitative Photoluminescence Studies in a-Si:H/c-Si Solar Cells Von der Fakultat fiir Mathematik und Naturwissenschaften der Carl von Ossietzky Universitat Oldenburg zur Erlangung des Grades und Tit els einer Doktorin der Naturwissenschaften (Dr. rer. nat) angenommene Dissertation von Saioa Tardon geboren am 02.06.1975 in Bilbao (Spanien) Oldenburg, 2005 2 Gutachterin/Gutachter: Prof. Dr. G. H. Bauer Zweitgutachter: Dr. habil. Rudolf Bruggemann Prof. Dr. Jurgen Parisi Tag der Disputation: 11.05.06 Contents 1 Introduction 5 2 a-Si:H/c-Si solar cells 8 3 Photon emission from matter 12 3.1 Injection of photons ............................................................................................ 12 3.2 Interaction between photons and electrons .............................................. 13 3.3 Propagation of photons ..................................................................................... 15 3.4 Extraction of photons ......................................................................................... 18 3.5 Continuity equation at steady state conditions ....................................... 19 4 Non-radiative recombination 21 5 Experimental setup 23 6 Quantitative measurements of photoluminescence of absorbers with passivation layers 25 6.1 Determination of quasi-Fermi level splitting ........................................... 25 6.1.1 Results ....................................................................................................... 26 6.2 Calculation of effective -
Microscopic Theory of Linear and Nonlinear Terahertz Spectroscopy of Semiconductors
Microscopic Theory of Linear and Nonlinear Terahertz Spectroscopy of Semiconductors Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften (Dr. rer. nat.) dem Fachbereich Physik der Philipps-Universit¨at Marburg vorgelegt von Johannes Steiner aus Attendorn Marburg(Lahn), 2008 Vom Fachbereich Physik der Philipps-Universit¨at Marburg als Dissertation angenommen am 24.11.2008 Erstgutachter: Prof. Dr. M. Kira Zweitgutachter: Prof. Dr. F. Gebhard Externer Gutachter: Prof. Dr. I. Galbraith Tag der mundlichen¨ Prufung:¨ 09.12.2008 ii Zusammenfassung Seit der Entwicklung moderner Methoden des Kristallwachstums hat die Halbleitertech- nologie enorme Fortschritte gemacht. Dank neuer Verfahren k¨onnen sehr reine Halbleiter- heterostrukturen hergestellt werden, deren Beschaffenheit mit nahezu atomarer Pr¨azision kontrolliert werden kann. Dies hat zur Entwicklung vieler Anwendungen gefuhrt,¨ wie z.B. zur Herstellung von hochwertigen Computerchips, von Leuchtdioden (LEDs) und von Halbleiterlasern. Die Erforschung von Halbleitern ist vor allem aus zwei Grunden¨ von In- teresse fur¨ die theoretische Physik: Erstens erfordert die Weiterentwicklung und Verbes- serung elektronischer und optoelektronischer Bauelemente ein detailliertes Verst¨andnis der zugrundeliegenden mikroskopischen Prozesse und zweitens sind die hochwertigen Nanostrukturen, die heute kunstlich¨ hergestellt werden k¨onnen, ideale Modellsysteme, um fundamentale physikalische Anregungen in Festk¨orpern zu untersuchen. Experimentell k¨onnen die quantenmechanischen Prozesse in Halbleitern gut durch optische Experimente untersucht werden. Es liegt nahe, in diesen Experimenten Licht aus einem Frequenzbereich zu verwenden, dessen Energie ungef¨ahr der Bandluckenenergie¨ entspricht, da so Elektronen vom Valenz- ins Leitungsband angehoben werden k¨onnen, wobei ein positiv geladenes Loch im Valenzband zuruckbleibt.¨ Die Bandluckenenergie¨ in typischen Halbleitern betr¨agt ungef¨ahr ein Elektronenvolt (1 eV ˆ=1240 nmˆ=242 THz), so dass Experimente bisher vor allem sichtbares Licht bzw. -
Electroluminescence Vs. Photoluminescence
Electroluminescence vs. Photoluminescence This application note presents a brief comparison in characterization of light-emitting material such as GaN using electroluminescence and photoluminescence. In photoluminescence (PL), excess carriers (electrons and holes) are photo-excited by exposure to a sufficiently intense light source, and the luminescence emitted from the radiative recombination of these photo-excited carriers. PL mapping combines conventional PL with a scanning stage. Both the intensity and the peak wavelength uniformity across the whole wafer can thus be acquired and used for evaluation. Electroluminescence (EL) is similar to photoluminescence, except that in electroluminescence the excess carriers are produced by current injection and it is usually measured on finished device. The photoluminescence is mainly determined by the optical properties of the material, while the electroluminescence is determined by a number of factors such as the optical properties and physical structures of the optically active layers, the electrical properties of two conductive regions which are used for cathode and anode contacts, and the properties of the electrical contacts through which the electrical current injected. It is well known that photoluminescence is not equivalent to electroluminescence. High photo-luminescence efficiency is necessary but not sufficient for good light-emitting materials or wafers. A wafer with high photoluminescence efficiency may or may not exhibit high electroluminescence efficiency and hence good light emitting diodes (LEDs). The different emission mechanism between PL and EL could also result in huge emission wavelength/intensity change. It has been reported that, at least in green LED, top contact layer could change the MQW PL emissions dramatically, and EL spectra from the fabricated devices were very different from the MQW PL measurements. -
Exploring Photoluminescence
Name: Class: LUMINESCENCE Visual Quantum Mechanics It’s Cool Light! ACTIVITY 5 Exploring Photoluminescence Goal In the previous activity, we explored several types of luminescence and compared it with incandescence. In this activity, we will investigate luminescent materials that require light to emit light. These materials are called photoluminescent. In a dark room, open the black envelope labeled “A” assigned by your instructor that contains an object that has been placed in it overnight. Take the object out of the envelope. ? Does object “A” emit light? If it does, in the space provided below describe the emitted light. Turn on the lights and expose the object to the light. After a few seconds, turn off the lights. ? Does object “A” seem to emit light when the lights are on? ? Now, turn the light off again. Does light come from object “A” ? If it does, in the space provided below describe the characteristics of the emitted light. Photoluminescence, unlike the other types of luminescence, requires light in order to emit light. As a result, the chart used in the first activity to identify the different types of luminescence (Figure 1-3) needs to be expanded to include Figure 5-1 illustrated on the following page. Kansas State University @2001, Physics Education Research Group, Kansas State University. Visual Quantum Mechanics is supported by the National Science Foundation under grants ESI 945782 and DUE 965288. Opinions expressed are those of the authors and not necessarily of the Foundation. 5-1 Luminescence ENERGY: Light photoluminescence object glows after light is removed yes no phosphorescence fluorescence Figure 5-1: Photoluminescence Addition to Luminescence Chart According to Figure 5-1, a photoluminescent object emits light or glows as a result of shining light on the object. -
Nanoplatelets As Material System Between Strong Confinement And
Nanoplatelets as material system between strong confinement and weak confinement Marten Richter1, ∗ 1Institut f¨urTheoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universit¨atBerlin, Hardenbergstr. 36, EW 7-1, 10623 Berlin, Germany (Dated: October 18, 2018) Recently, the fabrication of CdSe nanoplatelets became an important research topic. Nanoplatelets are often described as having a similar electronic structure as 2D dimensional quantum wells and are promoted as colloidal quantum wells with monolayer precision width. In this paper, we show, that nanoplatelets are not ideal quantum wells, but cover depending on the size: the strong confinement regime, an intermediate regime and a Coulomb dominated regime. Thus, nanoplatelets are an ideal platform to study the physics in these regimes. Therefore, the exciton states of the nanoplatelets are numerically calculated by solving the full four dimensional Schr¨odingerequation. We compare the results with approximate solutions from semiconductor quantum well and quan- tum dot theory. The paper can also act as review of these concepts for the colloidal nanoparticle community. In quantum dots the wave function of the electron and is the correct approach, if confinement dominates com- hole, that form the optically created exciton are con- pared to Coulomb interaction. Treatments with a chem- fined in all three dimensions resulting in a quasi zero ical background22 used a Frenkel exciton ansatz, which dimensional system with discrete states1{5. The chemi- does not reflect the properties of the more Wannier type cal synthesis of colloidal quantum dots is a very active excitons in the nanoplatelets. research field6{9, since the controlled growths of these A detailed look at the typical model ansatz wavefunc- materials lead to many real life applications like dyes for tions for platelets, previously known from quantum wells e.g. -
Modeling of Interlayer Excitons in Van Der Waals Heterostructures
Modeling of interlayer excitons in van der Waals heterostructures Simon Ovesen Department of Physics CHALMERS UNIVERSITY OF TECHNOLOGY Gothenburg, Sweden 2017 Master’s thesis 2017 Modeling of interlayer excitons in van der Waals heterostructures Simon Ovesen Department of Physics Division of Condensed Matter Theory Chalmers University of Technology Gothenburg, Sweden 2017 Modeling of interlayer excitons in van der Waals heterostructures Author: Simon Ovesen © Simon Ovesen, 2017. Supervisor: Ermin Malic, Department of Physics, Division of Condensed Matter Theory Examiner: Ermin Malic, Department of Physics, Division of Condensed Matter Theory Master’s Thesis 2017 Department of Physics Chalmers University of Technology SE-412 96 Gothenburg Telephone +46 31 772 1000 Cover: Illustration of the formation and radiative decay of interlayer excitons. Taken from [1]. Typeset in LATEX Gothenburg, Sweden 2017 iv Modeling of interlayer excitons in van der Waals heterostructures Simon Ovesen Department of Physics Chalmers University of Technology Abstract The field of TMD (Transition Metal Dichalcogenide) monolayers is an active one due to certain interesting properties such as a direct band gap, strong spin-orbit coupling and a remarkably large Coulomb interaction leading to strongly bound excitons. For technical applications heterostructures composed of stacked monolayers are also a huge topic of interest. Recent experimental studies of the photoluminescence of these structures show evidence of the existence of interlayer excitons. The aim of this thesis is to propose a mechanism for the formation and dynamics of these interlayer excitons in a bilayer heterostructure. For this purpose the second quantization formalism and tight binding approach are employed. Aside from the free, optical, carrier-photon, carrier-phonon and Coulomb interactions that have already been studied for monolayers, a tunneling interaction that couples the two layers is also included. -
Deviations of the Exciton Level Spectrum in Cuprous Oxide from The
Deviations of the exciton level spectrum in Cu2O from the hydrogen series F. Sch¨one,S.-O. Kr¨uger,P. Gr¨unwald, H. Stolz, and S. Scheel Institut f¨urPhysik, Universit¨atRostock, Albert-Einstein-Strasse 23, D-18059 Rostock, Germany M. Aßmann, J. Heck¨otter,J. Thewes, D. Fr¨ohlich, and M. Bayer Experimentelle Physik 2, Technische Universit¨atDortmund, D-44221 Dortmund, Germany Recent high-resolution absorption spectroscopy on excited excitons in cuprous oxide [Nature 514, 343 (2014)] has revealed significant deviations of their spectrum from that of the ideal hydrogen- like series. Here we show that the complex band dispersion of the crystal, determining the kinetic energies of electrons and holes, strongly affects the exciton binding energies. Specifically, we show that the nonparabolicity of the band dispersion is the main cause of the deviation from the hydrogen series. Experimental data collected from high-resolution absorption spectroscopy in electric fields validate the assignment of the deviation to the nonparabolicity of the band dispersion. PACS numbers: 71.35.Cc, 78.20.-e, 32.80.Ee, 33.80.Rv I. INTRODUCTION the band dispersion. Fluorescence spectra of atomic systems are an ex- II. VALENCE BAND DISPERSIONS IN tremely rich source of information about the interactions CUPROUS OXIDE of electrons and the nuclei, and their study laid the foun- dations of the development of quantum mechanics. The Cuprous oxide (Cu O) was historically the first ma- basic hydrogen dependence of the electron binding ener- 2 2 terial in which excitons were observed [7{9]. Their dis- gies of 1=n already turns out to be insufficient for al- covery, combined with the availability of exceptionally kali, i.e.