3D PLUS www.3d-plus.com 78532 BUC - FRANCE 641, Rue Hélène Boucher Technical presentations Day on 28 April 2004 – ESTEC - Noordwijk Microelectronic Packaging technologies Memory Products Overview

PM, April 2004 3D PLUS Strategic Standard Products Lines 3D PLUS Strategic Standard Products Lines SDRAM DDR SDRAM FLASH SRAM DPRAM EEPROM Mixed Modules (SRAM + EEPROM) DSP ATMEL TSC21020F DSP Texas Instruments C6000 and C5500 4W 10W (in development) • • • • • • • • • • • Memory Modules Modules Camera Head and Sensors Modules DC/DC Converters Modules • • • •

PM, April 2004 3D PLUS Memory Modules Benefits Overview 3D PLUS Memory Modules Benefits 3D PLUS Memory Modules Benefits Overview 3D PLUS Memory Modules Benefits Miniaturization (Save up to 80 % Space in the design), Very High Density, Wide Organization (x 32, x 48, 64, 72, … and more if needed), High Operating Speed, High Signal Integrity and Immunity to Noise Ground Bounce, Low-Power Consumption, High Reliability – MTBF Space quality level Manufacturing & screening flow Characterization in terms of radiations tolerance (TID & SEE) • • • • • • • • •

PM, April 2004 System board embedding 3-D module Side View = One 3D Top View erformance in Smaller Spaces : rasitic elements Reduction 4 : 1 4 : 1 Size Reduction Reduction I/O Number System board 3D PLUS Concept & Technology for Memory Modules 3D PLUS Concept & Technology for Memory Modules (Die, CSP, TSOP, CSP, µBGA, …) µBGA, TSOP, CSP, (Die, CSP, Four Memory Packages 75 % Electrical Length and Pa A TechnologyMore Memory P for

PM, April 2004 SSR Size 2800 Gb 600 Gb 600 300 Gb 300 100 Gb 1200 Gb 144 / 288 Gb Programs 2004 72 Gb Today’s Programs Science Today’s Earth Observation Ø × 0,041 Kg/Gb CryoSat, TerraSar, SarLupe TerraSar, CryoSat, 20 Gb HerschrelPlanck 40 Gb Power Consumption I/Os Speed 1998 2002 RadarSat, Cosmo/Skymed 0,8 Kg/Gb 4,45 Kg/Gb 1996 2000 2006 Metop Envisat, Cluster-2, 4 Gb 8 Gb 2 Gb 1 Gb 3D PLUS Heritage for Solid State Recorders 3D PLUS Heritage for Solid State Recorders 3D PLUS Heritage for Solid State Recorders 0,64 Gb 0,512 Gb Module Capacity 3,2 Gb Die Process TSOP Process 3,2 Gb

PM, April 2004 2 Gb to 8 Gb SDRAM Memory Modules 1 Gb to 2 DDR SDRAM Memory Modules 3D PLUS Memory Modules Highlights 3D PLUS Memory Modules Highlights • • 8 Gb to 16 Modules 16 Mb to 64 Mb SRAM Memory Module 4 Mb to 8 EEPROM Memory Modules Memory Solutions for Computer Boards, « Disc On Chip » and Mass Storage : • • •

PM, April 2004 64Mx8 64Mx8 64Mx8 64Mx8 64Mx8 64Mx8 64Mx8 64Mx8 #CS0 #CS4 #CS1 #CS2 #CS3 #CS5 #CS6 #CS7 CLKE0 CLKE1 CLKE2 CLKE3 CLKE4 CLKE5 CLKE6 CLKE7 A0-A12 DQ0-DQ7 #CAS,#RAS #WE,BA0,BA1 DQM CLK, Diagram Module (stack of four TSOPs only) ment under control of 3D PLUS Management possibility Management for each SDRAM Die memory organization possible) 4 Gb SDRAM Memory Module 4 Gb SDRAM Memory Module 8 (24 * 11 12 mm) Total Power Consumption Basic : Basic SDRAM Product Life Cycle Manage Other New Products : 2 Gb SDRAM Memory Packaging : Packaging : Features Description : Part Number: Memory Organization : 512 Mb DDP or Single Chip 512 Mb • • ⇒ • SOP 58-08 or 54-0 for Systems Targeted Independent CS and CLKE • • • Stack of eight 512 Mb SDRAM • MMSD08512808S-E or MMSD04102408S-E • 512M x 8 or 1G 4 (other

PM, April 2004 gement under control of 3D PLUS FLASH Memory integrated in the Module for High speed Memory integrated in the Module FLASH 8 Gb FLASH Memory Module 8 Gb FLASH Memory Module Other New Products : 4Other New Products Gb FLASH (stack of four TSOPs Memory Module only) Description : Part Number: Memory Organization : : Packaging : Features Memory cell : Basic FLASH Product Life Cycle Mana • • Stack of eight 1 Gb FLASH • MMFN08102808S-F • 1G x 8 (other memory organization possible) • SOP 50-05 or SOP 54-08 (18,7 * 13,5 12 mm) • Data Storage Application for Mass Targeted Independant of each control 1 Gb from Other Memory can be used (TOSHIBA, AMD, …) Supplier • Access •

PM, April 2004 256k x 16 16 x 256k Bits 16 x 256k BIts 16 x 256k BIts 16 x 256k LB LB LB WE OE UB WE OE UB WE OE UB WE OE UB LB CS CS CS CS # # # # # # AO-17 # # # # # # # # # # # # # # I/O I/O AO-17 I/O AO-17 I/O AO-17 LB UB OE WE # CS1 # # CSO # # # AO-17 I/O1-16 I/O17-32 BLOCK DIAGRAM th ATMEL – AT61162E) PN: 16 Mb SRAM Memory Module 16 Mb SRAM Memory Module Good behavior in the temperature range Good behavior Good radiation tolerance performance Description : Part Number: Memory Organization : : Packaging :Features cf. block diagram for x32 organisation Memory cell : Basic Other : 32 Products Module (stack of eight Memory Mb SRAM TSOPs) • Stack of four 4 SRAM or sixteen 1Mb SRAM Mb • MMSR32510604S- MMSR16001808S-CR (Cooperation wi 512k 2Mx8 x 32, 1Mx16, • SOP 64-08 (28 * 11 H) • • 4 Mb SAMSUNG Rev. C, (TSOP) 1 Mb ATMEL 65609E, QML-Q (Die) ⇒ ⇒ • •

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RDY / BUSY# AO-16 RES# 8bit x 128k 8bit x 128k I/O 0-7 A0-16 ainst other solutions 4 Mb EEPROM Memory Module 4 Mb EEPROM Memory Module Good behavior in the temperature range Good behavior Good radiation tolerance performance 75 % Area Savings 80 % weight Savings ag Features : cf. block diagram Features Memory cell : Basic EEPROM Product Life Cycle Management under control of 3D PLUS Other New Products : 8 Mb EEPROM Memory Module (stack of eight TSOPs only) Description : Part Number: Memory Organization : : Packaging • 1 Mb EEPROM (128k x 8) ref. HN58C1001T-15 (TSOP) ⇒ ⇒ • • • Stack of four 1 Mb EEPROM • MMEE08510804SCC • 512K x 8 memory organization (x32 possible) • SOP 40-05 – G4 Package (13,2 * 11,7 7,5 mm) ⇒ ⇒ •

PM, April 2004 Cluster II (ESA) Proba (ESA)

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PM, April 2004 Dimension rd e 3D PLUS product range available 3D PLUS www.3d-plus.com 78532 BUC Cedex Tel.: +33.(0)1.30.83.26.58 641, rue Hélène Boucher – ZI e-mail : [email protected] 3D PLUS Product Highlights for 2004 3D PLUS Product Highlights 3D PLUS Product Highlights for 2004 3D PLUS Product Highlights These Products are a short list of th on our Web Site : Don’t hesitate to contact us discuss your needs…in the 3

PM, April 2004