Rectifier Diode Avalanche Diode

查询DS75-08B供应商捷多邦，专业PCB打样工厂，24小时加急出货 DS 75 DSI 75 DSA 75 DSAI 75

Rectifier Diode VRRM = 800-1800 V Avalanche Diode IF(RMS) = 160 A IF(AV)M = 110 A

ÿ① DO-203 AB VRSM V(BR)min VRRM Anode Cathode C A V V V on stud on stud DS DSI

900 - 800 DS 75-08B DSI 75-08B DSA DSAI A C 1300 - 1200 DS 75-12B DSI 75-12B

1300 1300 1200 DSA 75-12B DSAI 75-12B

1700 1760 1600 DSA 75-16B DSAI 75-16B

1900 1950 1800 DSA 75-18B DSAI 75-18B ① Only for Avalanche Diodes 1/4-28UNF

A = Anode C = Cathode Symbol Test Conditions Maximum Ratings

IF(RMS) TVJ = TVJM 160 A ° ° Features IF(AV)M Tcase = 100 C; 180 sine 110 A ● International standard package, P DSA(I) types, T = T , t = 10 ms20kW RSM VJ VJM p JEDEC DO-203 AB (DO-5) ° ● Planar glassivated chips IFSM TVJ = 45 C; t = 10 ms (50 Hz), sine 1400 A

VR = 0 t = 8.3 ms (60 Hz), sine 1500 A Applications T = T t = 10 ms (50 Hz), sine 1250 A VJ VJM ● High power rectifiers V = 0 t = 8.3 ms (60 Hz), sine 1310 A R ● Field supply for DC motors 2 ° 2 ● Power supplies I t TVJ = 45 C t = 10 ms (50 Hz), sine 9800 A s 2 VR = 0 t = 8.3 ms (60 Hz), sine 9450 A s Advantages T = T t = 10 ms (50 Hz), sine 7820 A2s VJ VJM ● Space and weight savings V = 0 t = 8.3 ms (60 Hz), sine 7210 A2s R ● Simple mounting ° ● TVJ -40...+180 C Improved temperature and power ° TVJM 180 C cycling ° ● Tstg -40...+180 C Reduced protection circuits

Md Mounting torque 2.4-4.5 Nm 21-40 lb.in. Dimensions in mm (1 mm = 0.0394") Weight 21 g

Symbol Test Conditions Characteristic Values £ IR TVJ = TVJM; VR = VRRM 6mA ° £ VF IF = 150 A; TVJ = 25 C 1.17 V

VT0 For power-loss calculations only 0.75 V W rT TVJ = TVJM 2m

RthJC DC current 0.5 K/W

RthJH DC current 0.9 K/W dS Creepage distance on surface 4.05 mm dA Strike distance through air 3.9 mm a Max. allowable acceleration 100 m/s2

200 1500 105 50Hz, 80%V typ. lim. RRM VR = 0 V A A A2s

TVJ = 45°C I 6 150 FSM IF T = 45°C I2t T = 180°C 1000 VJ VJ T = 180°C VJ 4 TVJ= 25°C 100

500 T = 180°C VJ 2 50

0 0 104 0.0 0.5 1.0 1.5 V 10-3 10-2 10-1 s 100 11023456789ms

VF t t Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I2t versus time (1-10 ms)

IFSM: crest value, t: duration 200 200 W A

RthJA : I F(AV)M DC 150 1 K/W 150 180° sin 1.2 K/W 120° PF 1.6 K/W 60° 30° 2 K/W 100 3 K/W 100 4 K/W

DC 50 180° sin 50 120° 60° 30°

0 0 0 50 100 150A 20000 50 100 150°C 200 0 40 80 120 160°C 200 T IF(AV)M amb Tcase Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 1.5

K/W 30° R for various conduction angles d: 60° thJH 120° dR (K/W) ZthJH 180° thJH DC 1.0 DC 0.900 180° 1.028 120° 1.085 60° 1.272 30° 1.476 0.5

Constants for ZthJH calculation:

iRthi (K/W) ti (s) 1 0.0731 0.0015 0.0 2 0.1234 0.0237 10-3 10-2 10-1 100 101 102 s 103 3 0.4035 0.4838 t Fig. 6 Transient thermal impedance junction to heatsink 4 0.3000 1.5