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Towards Room-Temperature Deterministic Ferroelectric Control of Ferromagnetic Thin Films

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Towards Room-Temperature deterministic ferroelectric control of ferromagnetic thin films THÈSE NO 6904 (2015) PRÉSENTÉE LE 17 DÉCEMBRE 2015 À LA FACULTÉ DES SCIENCES ET TECHNIQUES DE L'INGÉNIEUR LABORATOIRE DE CÉRAMIQUE PROGRAMME DOCTORAL EN SCIENCE ET GÉNIE DES MATÉRIAUX ÉCOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE POUR L'OBTENTION DU GRADE DE DOCTEUR ÈS SCIENCES PAR Zhen HUANG acceptée sur proposition du jury: Prof. W. Curtin, président du jury Dr I. Stolichnov, Prof. N. Setter, directeurs de thèse Prof. J. Petzelt, rapporteur Dr R. Gysel, rapporteur Prof. J.-Ph. Ansermet, rapporteur Suisse 2015 i Abstract The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and material-systems possessing both ferroelectric and ferromagnetic orders. Multiferroics with two order parameters coupled through a magnetoelectric interaction are of particular interest for novel information processing technologies. This thesis explores a promising concept of magnetoelectric multiferroic heterostructure incorporating separate ferroelectric and ferromagnetic thin layers with field-effect-mediated coupling through the heterointerface. The major issues related to ferroelectric control of ferromagnetism in multiferroic heterostructures addressed in this thesis include non-volatile magnetoelectric coupling at room temperature, deterministic switching of magnetization via polarization reversal, ferroelectric control of dynamics of magnetic domains and integration of ferroelectric gates on magnetic channels. The major accomplishments of this thesis are the following: y Non-volatile ferroelectric control of magnetic properties has been demonstrated in ultra-thin Co layers at room temperature. The ferromagnetic transition Curie temperature, magnetic anisotropy energy and magnetic coercivity are shown to be switchable via the persistent field effect associated with the ferroelectric polarization. The magnitude of the effect is comparable or exceeds the results observed using the conventional (non-ferroelectric) gates. y Local control of individual magnetic domain nucleation and propagation in Co channels by creating new ferroelectric domains has been achieved at the ambient conditions. The microscopic ferroelectric domains written on poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate projected onto the magnetic channel changing locally the magnetic anisotropy energy, and consequently altering magnetic domain dynamics. Therefore it was possible to promote/impede magnetic domain nucleation and significantly change the domain wall velocity using a non-destructive and reversible procedure of ferroelectric domain writing. y Non-volatile control of anisotropic magnetoresistance (AMR) has been demonstrated on diluted magnetic semiconductor (Ga,Mn)(As,P) thin films with integrated P(VDF-TrFE) ferroelectric gate. The field effect induced by the ferroelectric gate has shown the capability to strongly modulate the ii AMR behavior. Profound qualitative changes of the nature of AMR has been observed, including complete on/off switching of the crystalline component of AMR in (Ga,Mn)(As,P). y A workflow for fabrication of integrated FET-type structures comprising a magnetic metal or semiconductor magnetic channel and ferroelectric polymer gate has been successfully developed. Different approaches for enhancement of ferroelectric gate operation were explored including integration of highly resistive hydrophobic interfacial layer and change of polymer composition for lower leakage. A significant increase of the non-volatile gate effect magnitude compared to the state of art was reached via improved quality of the ferroelectric/ferromagnetic interface. Keywords: Multiferroics, Ferroelectricity, Ferromagnetism, magnetoelectric coupling, FeFET, P(VDF-TrFE), (Ga,Mn)As, ultra-thin Co film, anisotropy, domain kinetics. iii Résumé La demande persistante d’une puissance de calcul plus élevée et le traitement plus rapide de l'information continuent à pousser les scientifiques et ingénieurs à explorer de nouveaux matériaux et structures. Au sein de ces nouveaux matériaux fonctionnels, l’accent est mis sur les matériaux multiferroïques et les systèmes matériau possédant deux paramètres d’ordre, ferroélectriques et ferromagnétiques. Les multiferroïques avec ces paramètres d’ordre couplés à travers une interaction magnétoélectrique ont un intérêt particulier pour les nouvelles technologies informatiques. Cette thèse étudie le concept prometteur d'hétéro structures magnétoélectriques multiferroïques incorporant des couches minces ferroélectriques et ferromagnétiques distinctes couplées par effet de champ. Les grandes questions ayant trait au contrôle ferroélectrique du ferromagnétisme dans les hétérostructures multiferroïques abordées dans cette thèse incluent le couplage magnétoélectrique non volatile à température ambiante, le renversement déterministe de l'aimantation par l’inversion de polarisation ferroélectrique, le contrôle ferroélectrique de la dynamique des domaines magnétiques et l’intégration de grilles ferroélectriques sur des canaux magnétiques. Les principales réalisations de cette thèse sont les suivantes y Le contrôle ferroélectrique non-volatile des propriétés magnétiques a été démontré dans des couches ultra-minces de Co à température ambiante. La température de Curie de transition ferromagnétique, l'énergie d'anisotropie magnétique et la coercivité magnétique semblent être modifiables via l'effet de champ persistant associé à la polarisation ferroélectrique. L'amplitude de l'effet est comparable ou supérieur aux résultats observés à l'aide de grilles conventionnelles (non-ferroélectriques). y Le contrôle local de la nucléation et de la propagation de domaine magnétique individuel dans les canaux de Co en créant de nouveaux domaines ferroélectriques a été démontré en condition ambiante. Les domaines ferroélectriques microscopiques écrits sur la grille à base du polymère ferroélectrique poly(fluorure de vinylidène-trifluoroéthylène) [P(VDF-TrFE)] changent localement l'énergie d'anisotropie magnétique dans le canal magnétique et par conséquent altère la dynamique de domaines magnétiques. Il fut donc possible de promouvoir/entraver la nucléation de domaines magnétiques et changer de façon significative la vitesse de paroi de domaine à l'aide d'une procédure d’écriture non-destructive et réversible de domaine ferroélectrique. iv y Le contrôle non-volatile de la magnétorésistance anisotrope (AMR) a été démontrée dans des semi-conducteurs magnétiques dilués (Ga,Mn)(As,P) en couche mince avec P(VDF-TrFE) comme grille ferroélectrique. L'effet de champ induit par la grille ferroélectrique a démontré la capacité de moduler fortement le comportement de l’AMR. D’importants changements qualitatifs sur la nature de l’AMR a été observée, y compris une commutation ON/OFF complète de la composante cristalline de l’AMR dans les films de (Ga,Mn)(As,P). y Un flux de travail pour la fabrication de structures de FET-type comprenant comme canal un métal magnétique ou un semi-conducteur magnétique et une grille polymère ferroélectrique a été développé avec succès. Des approches différentes pour l'amélioration du fonctionnement de la grille ferroélectrique ont été explorées notamment l'intégration de couche d’interface hydrophobe très résistive ou le changement de composition du polymère d'étanchéité inférieure. Une augmentation significative de l'amplitude de l'effet de la grille non-volatile par rapport à l'état de l'art a été atteint par l'amélioration de la qualité de l'interface ferroélectrique/ ferromagnétique. Mots clés: Multiferroïque, ferroélectricité, ferromagnétisme, couplage magnéto- électrique, FeFET, P(VDF-TrFE), (Ga,Mn)As, film de Co ultra-mince, anisotropie, cinétique de domaine. v Contents Abstract ...................................................................................................................... i Résumé .................................................................................................................... iii Preface ..................................................................................................................... 1 Chapter 1 Ferroelectric materials and their application in field effect devices ..... 5 1.1 Ferroelectricity ............................................................................................... 5 1.1.1 Historical background ........................................................................ 5 1.1.2 Ferroelectricity and its origin ............................................................. 6 1.1.3 Phase transition between ferro-/para-electric phases ......................... 9 1.1.4 Permittivity development as a function of temperature in ferroelectrics .................................................................................... 12 1.1.5 Ferroelectric domains....................................................................... 14 1.1.6 Polarization switching and ferroelectric hysteresis.......................... 15 1.1.7 Depolarization effect ........................................................................ 17 1.1.8 Ferroelectric materials ..................................................................... 19 1.1.9 The selection of ferroelectric materials for multiferroics studies .... 20 1.2 PVDF and its ferroelectric properties .........................................................
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