Understanding Whisker Phenomenon: Driving Force for Whisker Formation
Chen Xu, Yun Zhang*, C. Fan and J. Abys
* Part of this work was carried out at Lucent 1
Enthone Confidential Outline
• Whisker Background • Whisker Program – Phase I, whisker test – Phase II, whisker growth rate and whisker growth mechanisms • Conclusions and Recommendations 2
Enthone Confidential FINISH ADVANTAGES CONCERNS/ISSUES
Sn Most cost effective 232 °C Compatible with Whisker formation soldering alloy Simple process control
Sn(2-5)Bi Compatible with Whisker formation 220 – 225 °C soldering alloy Immersion plating Melting point lower Alloy control & measurement
Sn3.5Ag Compatible with Whisker formation 221 °C soldering alloy Very narrow process window Melting point lower Cost increase Environmental issue with Ag
Sn(0.7-1.5)Cu Compatible with Whisker formation 227 - 270 °C soldering alloy Immersion plating Melting point lower Accelerated Sn(II) oxidation 3
Enthone Confidential Lead-Free Implementation Barrier Spontaneous Whisker Growth!
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Enthone Confidential Tin Whiskers
Filament Nodule
120 µm 15 µm
Column Mound
9 µm
2 µm
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Enthone Confidential Whisker Program Understanding the Whisker Growth Phenomenon • Previous Results - Phase I – Established a reliable whisker test • 50°C, dry heat • Office Condition • Thermal Cycling – Investigated the relative importance of several factors • Grain size & shape, carbon content • External mechanical bending • Temperature & humidity • Current Work - Phase II – Whisker growth rate – Whisker growth mechanisms 6
Enthone Confidential Phase II & III Test Matrix SnO or “Cap” Au, Pd & Ag Flash Sn/Sn Alloy Sn Bright, matte and Satin Bright Tin
IMC SnNi35SnCu46 Ni Underlayer Ni MLS Ni
Substrate Cu Parameters Tested Effect of “Cap” Type of Sn Ni Underlayer External Stress Reflow Group I Group II Temperature 90° Tensile or Group III Compressive Bend Reflow Whisker Test 7
Enthone Confidential Method of SEM Observation
2 mm Bent area, stressed
Flat area, not stressed
1 inch
2.5 inches Area of examination: 0.5 mm x 27.4 mm 8 Four magnifications: 500X, 1K, 5K & 10K
Enthone Confidential Maximum Length Measurement Bright Tin 6 months
3 months
600 µm 30 µm
800 700 600 500 400 300 200
Max. length, microns 100 0 9 0 4 8 12 Months
Enthone Confidential Maximum Length Measurement Satin Bright Tin 6 months
3 months
5 µm
4 µm
20
15
Phase II 10 Phase I
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Max. length, microns 10 0 0 3 6 10 12 Months Enthone Confidential Whisker Index Measure for Whisker Propensity
WI = S n*d*L*f(L)
n: number L: length d: diameter f: weight factor on length, L
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Enthone Confidential Whisker Index Relationship between factor f and whisker length
WI = S n*d*L*f(L)
Length, mm Weight Factor, f(L) < 1 0 1 – 5 1 5 – 10 5 10 – 50 50 > 50 500
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Enthone Confidential Categorization in Measurement Bright Tin
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Enthone Confidential Categorization in Measurement Satin Bright Tin
Total number: 5 14
Enthone Confidential Whisker Index
|------Whisker Index------| FINISH 4 MONTHS 6 MONTHS 10 MONTHS LONGEST* Bright 279 13,000 63,400 600
Bright + Tensile 244 2,800 45,200 350
Bright + 3850 13,500 193,000 750 Compressive Satin Bright 3.2 10.5 10 5
Satin Bright + 30 22 40 5 Compressive Satin Bright 4.1 8.6 907 10 90/10 Satin Bright / 2.1 4.0 8.9 4 Reflow Satin Bright / Ni 0.2 0 0 3
* Longest whisker (µm) observed up to 10 months 15
Enthone Confidential Whisker Propensity of Different Finishes Effect of Grain Size & Carbon Content Bright Vs. Satin Bright
80000 C = 0.2% GS = 0.2 µm 60000 Bright 40000
20000
Whisker Index Satin Bright C = 0.04% 0 GS = 5 µm 2 6 10 Aging Time, Months
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Enthone Confidential Whisker Propensity of Different Finishes Effect of 90° Compressive Mechanical Bending
Bright Vs. Satin Bright
250000 Bright, bend 200000 150000 100000 Bright, no bend 50000 Whisker Index Satin Bright, w & w/o bend 0 2 6 10 Aging Time, Months
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Enthone Confidential Effect of External Mechanical Stress Tensile Vs. Compressive
Bright Tin
200000 Compressive
150000
100000 No Bend 50000
Whisker Index Tensile
0 2 6 10 Aging Time, Months
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Enthone Confidential Whisker Propensity of Satin Bright Tin Effect of Reflow & Ni Underlayer
68000 58000 48000 38000 28000 18000 Whisker Index 8000 -2000 2 4 6 8 10 12 12 Aging Time, Months 10 B SB SB / Reflow SB / Ni 8 6 4
Whisker Index 2 0 2 6 10 Aging Time, Months
SB SB / Reflow SB / Ni 19
Enthone Confidential Understanding the Mechanisms Driving Force Whisker = f (A, B, C, D, E, F, G……..)
Grain Size Residual stress External Stress Organic Inclusion Hydrogen Inclusion Grain Shape and Orientation
Temperature and Humidity 20
Enthone Confidential Driving Force vs Factors Affecting Whisker Growth
• Driving Force: Thermodynamic DG=DH-TDS
• Other Factors: Kinetic
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Enthone Confidential Presentation Outline
• What Is Known about the Mechanisms? • Our Experimental Results: Ö Local Structure by FIB, SEM Ö Residual Stress by XRD • Conclusion
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Enthone Confidential Mechanisms of Whisker Growth
Whisker
SnOx Sn
CuSnx
Cu
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Enthone Confidential Mechanism of Spontaneous Whisker Growth To explain the observed phenomena, two models were developed
• Dislocation Model by Eshelby and Frank • Recrystallization Model by Ellis 24
Enthone Confidential Recrystallization and Grain Growth
Internal Energy Reduction
grain
Driving Force: Residual stress (compressive and tensile) Grain size Grain shape, orientation and distribution
Organic and hydrogen inclusion 25
Enthone Confidential Open Questions •Does whisker grow in the x,y-direction ?
? ? release Compressive stress Lateral growth release Tensile stress release Compressive stress Vertical growth increase Tensile stress 26
Enthone Confidential Focused Ion Beam (FIB)
Ga+ Ion Beam Detector 5-200 nm
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Enthone Confidential Cutting Through a Whisker
Sn
Cu6Sn5 Cu
Whisker
28
Enthone Confidential Bright Sn/Cu, aged at RT for 18 months
Whisker
Sn Cu Whisker ~400 mm Grain Boundary 29
Enthone Confidential SB Sn/Cu, aged at RT for 18 months
Whisker Sn
Cu6Sn5 Cu 30
Enthone Confidential FIB
x x
Tensile stress hinders whisker growth 31
Enthone Confidential Compressive vs Tensile Stress Compressive Stress: There will be excessive material in a given volume
Tensile Stress: There will be material deficiency in a given volume
Tensile stress hinders whisker growth 32
Enthone Confidential Driving Force vs Factors Affecting Whisker Growth
• Driving Force: Thermodynamic Compressive Stress : Whisker Tensile Stress : No Whisker
• Other Factors: Kinetic Grain Structure, Aging Condition, etc.
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Enthone Confidential Open Questions
•What does tensile stress do ?
? ?
•How to measure and control the stress in electroplated Sn? 34
Enthone Confidential Motivation (cont.) Why using XRD for the residual stress measurement? Detector X-ray
Non-destructive and spatial resolved Monitoring the stress evolution Stress measurement on real part Measuring the stress of individual layer 35
Enthone Confidential Stress Measurement using XRD u+1 u e (y) = s sin2y - (s + s ) x E x E x y
Tensile Stress Strain
Compressive Stress
sin2y 36
Enthone Confidential Shear Stress?
0.0002 z
0.0000 y y
-0.0002 x
-0.0004
-0.0006
-0.0008 Strain -0.0010
-0.0012 +y -0.0014
-0.0016 -y
0.0 0.1 0.2 0.3 0.4 0.5 0.6 37 2 sin y Enthone Confidential 3 Months at RT
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Enthone Confidential Stress Evolution in Sn Film Plated Directly Over Cu
Stress in MPa
As Plated 4 Months Bright -3±1 -10±1 SB Sn -1±1 -7±1
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Enthone Confidential Stop Cu-Diffusion into Sn
Sn
CuSn Ni x
Cu
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Enthone Confidential Ni Underlayer on Stress Samples aged at RT for 4 months
Stress in MPa
Sn/Cu Bright -10±1 SB Sn -7±1
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Enthone Confidential Ni Underlayer on Stress Samples aged at RT for 4 months
Stress in MPa
Sn/Cu Sn/Ni/Cu Bright -10±1 9±1 SB Sn -7±1 7±0
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Enthone Confidential Effect of Ni-Underlayer
100 100
Bright Sn/Ni/Cu SB Sn/Ni/Cu Bright Sn/Cu SB Sn/Cu
50 50 Whisker Index
0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Aging Time (Months) Aging Time (Months) 43
Enthone Confidential Intermetallic Formation Sn-Cu vs Sn-Ni
Sn Sn CuSn x SnNix Ni Cu Cu
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Enthone Confidential Minimizing Whisker Formation Using Thick Sn Coating (8~12 m)
45
Enthone Confidential Thick Sn Coating (8~10 m)
No stress
Compressive stress Sn CuSnx
Cu
46
Enthone Confidential Thick Sn Coating (8~10 m)
Compressive stress Sn CuSnx
Cu
47
Enthone Confidential Whisker Reduction Using Reflow
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Enthone Confidential Effect of Reflow
Stress after aging at RT for 12 months Satin bright Sn (MPa)
Sn as plated -8±3
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Enthone Confidential Effect of Reflow
Reflow: Right After Plating Stress Measurements: 12 Months Aging at RT Sn as plated -8±3 reflow 0±2
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Enthone Confidential Effect of Reflow
Sn
CuSnx
Cu
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Enthone Confidential Conclusion
• Tensile stress hinders whisker growth.
• Ni underlayer generates a tensile stress in the Sn film.
• Reflow reduces whisker growth propensity.
• Stress can be measured using XRD. 52
Enthone Confidential Recommendations
• SB Sn/Ni/Cu • SB Sn/Cu, Reflow • SB Sn(thick)/Cu • The evolution of the stress in Sn should be monitored and used in conjunction with whisker test for predicting the whisker growth propensity. 53
Enthone Confidential Stress Evolution with Time
No Whisker
Tensile
Aging Time
Whisker
Compressive 54
Enthone Confidential