your innovation. our memory.

2014 2H Micron® Product Guide your innovation. our memory.

We have the right device for your design.

Micron has one of the most 6 Segment Directory 13 DDR3 SDRAM 240-pin ECC UDIMM 16 DDR SDRAM 200-pin ECC SODIMM comprehensive, cost-competitive DDR3 SDRAM 240-pin VLP ECC UDIMM DDR SDRAM 184-pin RDIMM memory product portfolios in the DRAM DDR3 SDRAM 244-pin Mini-UDIMM DDR SDRAM 184-pin VLP RDIMM industry. We’re committed to DDR3 SDRAM 244-pin VLP Mini-UDIMM SDRAM 168-pin UDIMM meeting our customers’ needs with 10 MT40 and EDY DDR4 SDRAM DDR3 SDRAM 204-pin SODIMM SDRAM 168-pin ECC UDIMM a broad continuum of memory MT41 and EDJ DDR3 SDRAM DDR3 SDRAM 204-pin ECC SODIMM solutions, from legacy designs to MT47 DDR2 SDRAM DDR3 SDRAM 200-pin SORDIMM 17 SDRAM 144-pin SODIMM long-term stability for current MT46 DDR SDRAM SDRAM 168-pin RDIMM designs, new innovations, and MT48 SDRAM 14 DDR3 SDRAM 240-pin RDIMM emerging technologies. DDR3 SDRAM 240-pin VLP RDIMM Hybrid Memory Cube (HMC) 11 MT44 RLDRAM® 3 Memory DDR3 SDRAM 244-pin Mini-RDIMM MT49 RLDRAM 2 Memory DDR3 SDRAM 244-pin VLP Mini-RDIMM 17 Hybrid Memory Cube MT52 Mobile LPDDR3 DDR2 SDRAM 240-pin UDIMM 17 Bare Die and Wafer-Level Products MT42 Mobile LPDDR2 DDR2 SDRAM 240-pin ECC UDIMM MT46 Mobile LPDDR DDR2 SDRAM 200-pin SODIMM DDR2 SDRAM 200-pin SORDIMM NAND Flash 12 MT45 PSRAM CellularRAM® Memory 18 MT29 SLC NAND Flash EDW GDDR5 SGRAM Memory 15 DDR2 SDRAM 240-pin RDIMM NAND Small Page (SP) Flash DDR2 SDRAM 240-pin VLP RDIMM MT29 MLC NAND Flash Modules DDR2 SDRAM 240-pin FBDIMM MT29 Serial NAND Flash DDR2 SDRAM 244-pin Mini-RDIMM 12 DDR4 SDRAM 288-pin UDIMM DDR2 SDRAM 244-pin VLP Mini-RDIMM DDR4 SDRAM 288-pin ECC UDIMM DDR SDRAM 100-pin UDIMM Managed NAND DDR4 SDRAM 260-pin SODIMM DDR SDRAM 168-pin UDIMM DDR4 SDRAM 288-pin ECC SODIMM 19 MTFC e •MMC Memory for Embedded DDR SDRAM 184-pin UDIMM DDR4 SDRAM 288-pin RDIMM MTED and MTFD Embedded USBs DDR SDRAM 168-pin ECC UDIMM DDR4 SDRAM 288-pin VLP RDIMM MT29 Enhanced ClearNAND Flash Memory 16 DDR SDRAM 184-pin ECC UDIMM 13 DDR4 SDRAM 288-pin LRDIMM DDR SDRAM 144-pin SODIMM DDR3 SDRAM 240-pin UDIMM DDR SDRAM 200-pin SODIMM

3 your innovation. our memory. Directory Product

NOR Flash 25 M25PE Serial NOR Flash Embedded Part Numbering Guides 56 3xx and 4xx SSD M25PX Serial NOR Flash Embedded 57 4xx and 5xx SSD 20 M29AW Parallel NOR Flash Automotive M45PE Serial NOR Flash Embedded 31 DRAM Components M29DW Parallel NOR Flash Automotive N25Q Serial NOR Flash Embedded GDDR5, 58 Product Lifecycle Solutions 33 M29F Parallel NOR Flash Automotive Hybrid Memory Cube 59 Web Tools M29W Parallel NOR Flash Automotive 26 N25Q Serial NOR Flash Embedded (con’t.) 34 NOR MCP MT25Q Serial NOR Flash Embedded 35 MCP NAND/NOR + LPDDR1 21 M58BW Parallel NOR Flash Automotive 37 MCP e •MMC/NAND + LPDDR M58WR Parallel NOR Flash Automotive Solid State Drives (SSDs) 39 e •MMC Memory Legacy G18 Parallel NOR Flash Automotive 40 e •MMC Memory Next Generation J3 Parallel NOR Flash Embedded 27 M500 Self-Encrypting Drive Client SATA SSD 41 DDR4 Module M28W Parallel NOR Flash Embedded M550 Self-Encrypting Drive Client SATA SSD 42 DDR3 Module 43 DDR2 Module 22 M29DW Parallel NOR Flash Embedded 28 M510 Self-Encrypting Drive Client SATA SSD 44 DDR and SDRAM Module M29EW Parallel NOR Flash Embedded M550 Client SATA SSD 45 PSRAM CellularRAM Memory M29W Parallel NOR Flash Embedded M510 Client SATA SSD 46 NAND Flash P30 Parallel NOR Flash Embedded NAND Small Page Flash Memory, 47 29 M500 Enterprise SATA SSD N25Q Serial NOR Flash Memory 23 P30 Parallel NOR Flash Embedded (con’t.) M500DC Enterprise SATA SSD 48 M25/M45 Serial NOR Flash Memory P33 Parallel NOR Flash Embedded P320h Enterprise PCIe SSD M29 Parallel NOR Flash Memory, 49 M25P Serial NOR Flash Automotive (Legacy) P420m Enterprise PCIe SSD M29AW Automotive Uniform Block MLC Flash M25PE Serial NOR Flash Automotive M29DW Parallel NOR Flash, 50 (Page Erase) M29EW Parallel NOR Flash Multichip Packages (MCPs) 51 M29F Automotive Single-Bank 5V Flash Memory M25PE Serial NOR Flash Automotive P30/P33 Parallel NOR Flash Memory, 24 30 MT29C NAND Flash + LPDDR MCPs 52 (Dual I/O) P30/P33 Stacked MT29R NAND Flash + LPDDR2 MCPs N25Q Serial NOR Flash Automotive G18 Parallel NOR Flash Memory, 53 (Multiple I/O) MT38 NOR Flash-Based MCPs J3 Parallel NOR Flash Memory MT25T Serial NOR Flash Automotive M28W Parallel NOR Flash Memory, 54 (Twin QSPI, x8) M58BW Parallel NOR Flash Memory M25P Serial NOR Flash Embedded 55 M58WR Parallel NOR Flash Memory

4 5 Building on our decades of experience in the memory 10 DRAM Components business, we’ve established a broad portfolio of 12 PSRAM CellularRAM Memory Automotive products and technologies that maximize the functionality of today’s sophisticated automotive 18 NAND Flash Solutions for electronics. Our engineers have the technical 20 NOR Flash the road background to help you choose the best of our 11 Mobile LPDRAM Segment Directory high-quality, rigorously tested automotive memory • Directory Product 19 e MMC Memory solutions to optimize your design.

From workstations and netbooks, to tablets and ultrathins, computing designs require a multitude of packages, densities, and speeds. Our products enable you to optimize performance in key areas like signaling Client speeds and bandwidth and to find the right 12 DRAM Modules combination of power, efficiency, and cost. From 27 Solid State Drives (SSDs) Power and components to modules to SSDs, we manufacture our 10 DDR3/DDR4 SDRAM Components products from start to finish. We invest time up front, 20 NOR Flash efficiency rigorously testing and validating that our products are right the first time. Plus, our experienced technical support will help you get your design to market faster, easier, and better.

Today’s network-connected home enables consumers to receive, access, and share content of all types via devices like set-top boxes and wireless modems. It Connected also provides consumers the ability to automatically or 10 DRAM Components manually monitor and manage connected home 20 NOR Flash Home systems—like lighting, appliances, heating/cooling, 18 NAND Flash and security—from locations both in and away from 19 Managed NAND Powering smart the home, over a secured connection. Our memory plays a key role in making these innovations possible. 30 Multichip Packages (MCPs) innovations We offer a wide range of high-performance, high- quality memory solutions that support all connectivity options.

The convergence of applications in the graphics and consumer segment is bringing TV, social media, home entertainment, and gaming to end consumers Graphics 10 DRAM and GDDR5 Components through one piece of equipment. Micron offers one of the industry’s broadest portfolios to meet this very 20 NOR Flash and Consumer competitive segment’s demands for high-performance, 18 NAND Flash cost-efficient memory solutions. We’ve got the memory 19 Managed NAND Flash Balancing cost you need for a broad range of designs, including digital 30 Multichip Packages (MCPs) TVs, Blu-ray Disc™ players, video game consoles, 6 and performance portable game systems, personal media players, PC 7 graphics cards, media tablets, cameras, or printers. Our exacting quality standards, broad product IMM portfolio, individualized category support, and 10 DRAM Components commitment to supply stability set us apart as the 11 Mobile LPDRAM memory provider that IMM customers can rely on to 20 NOR Flash One source for serve mission-critical application needs. Our memory solutions are the top choice for PC, network 19 e •MMC Memory industrial/multi-market infrastructure, and communications equipment used 12 PSRAM CellularRAM Memory Segment in extreme environments—empowering the newest 18 NAND Flash Directory applications technology developments in the fields of science, medicine, and manufacturing.

We’ve developed some of the industry’s highest- performance mobile memory solutions, but we deliver more than just great products. We strive to 11 Mobile LPDRAM solve design challenges through better engineering— 18 NAND Flash Mobile/Tablet raising the bar on features, functionality, and performance. We work with chipset vendors, OS 12 PSRAM CellularRAM Memory Staying connected NAND and NOR Flash-Based designers, and other enablers to ensure our parts are 30 optimized for your design. You get a comprehensive Multichip Packages (MCPs) in a wireless world product portfolio of mobile memory solutions that 7 e •MMC Memory maximize performance, along with the technical experts to help you make it work for your applications.

The unique requirements of communications and 10 DRAM and RLDRAM Components networking applications demand high-performance, 12 DRAM Modules Networking specialty memory with low latency, rigorous thermal specifications, pristine signal integrity, and ECC data 18 NAND Flash Enabling applications protection. Choosing the right memory technology 19 eUSB, e •MMC Memory for your design is a critical decision you make on the 27 Solid State Drives (SSDs) now and into initial board layout; so is choosing a memory supplier 20 NOR Flash to provide it. Micron engineers and manufactures 17 Hybrid Memory Cube (HMC) the future a broad portfolio of specific solutions to meet the needs of your mission-critical networking applications. 12 GDDR5

Server designs demand reliability, performance, and low power consumption. We’ve developed a host of solutions—from professional-grade SSDs to the industry’s Enterprise lowest-voltage modules—that can help you address 13 LRDIMMs these challenges and overcome power and space 12 RDIMMs and Cloud constraints in data centers. We design and build our 18 NAND Flash memory solutions from start to finish—beginning with 27 SATA and PCIe Solid State Drives (SSDs) memory component design—rigorously testing at each Rigorously tested 17 Hybrid Memory Cube (HMC) stage of the manufacturing process. We also work with for reliability board makers and industry organizations to define and 9 develop the leading technologies that will enable your next server design. Density Bus Width Voltage Clock Rate Package Temp Range DRAM MT44 RLDRAM® 3 Memory 576Mb x18, x36 1.35V 800–1067 MHz 168-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C x18, x36 1.15Gb 1.35V 800 MHz 168-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C (576Mb DDP) Note: Products meet RoHS 5/6 standards. DRAM Density Bus Width Voltage Clock Rate Package Temp Range MT49 RLDRAM 2 Memory MT40 and EDY DDR4 SDRAM 288Mb x9, x18, x36 1.8V 300–400 MHz 144-ball uBGA 0˚C to +95˚C, –40˚C to +95˚C

4Gb x4, x8, x16 1.2V 1067–1600 MHz 78-, 96-ball FBGA 0˚C to +95˚C 576Mb x9, x18, x36 1.8V 300–533 MHz 144-ball uBGA 0˚C to +95˚C, –40˚C to +95˚C Note: Products meet RoHS 5/6 standards. x4, x8, x16 (SDP), 8Gb 1.2V 1067–1600 MHz 78-, 96-ball FBGA 0˚C to +95˚C x4 (4Gb DDP) MT52 Mobile LPDDR3 Note: Products meet RoHS standards. 4Gb x32 1.2V 667–800 MHz 216-ball UFBGA –30˚C to +85˚C MT41 and EDJ DDR3 SDRAM 216-, 253-ball WFBGA, 8Gb x32, x64 1.2V 667–800 MHz –30˚C to +85˚C 1Gb x4, x8, x16 1.35–1.5V 667–1067 MHz 78-, 96-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C, –40˚C to +105˚C 178-, 253-ball VFBGA 0˚C to +95˚C, –40˚C to +85˚C, 12Gb x32, x64 1.2V 667–800 MHz 216-ball FBGA –30˚C to +85˚C 2Gb x4, x8, x16 1.35–1.5V 800–1067 MHz 78-, 96-ball FBGA –40˚C to +95˚C, –40˚C to +105˚C 216-ball VFBGA, 216-ball WFBGA, 16Gb x32, x64 1.2V 667–800 MHz –30˚C to +85˚C 4Gb x4, x8, x16 1.35–1.5V 800–1067 MHz 78-, 96-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C, –40˚C to +105˚C 253-ball TFBGA Note: Products meet RoHS standards. x4, x8, x16 (SDP 8Gb 1.35V 800–1067 MHz 78-, 96-ball FBGA 0˚C to +95˚C, –40˚C to +95˚C and 4Gb DDP) MT42 Mobile LPDDR2 16Gb x16 (8Gb DDP) 1.35V 933 MHz 78-ball FBGA 0˚C to +95˚C 1Gb x32 1.2V 400 MHz 134-ball VFBGA –25˚C to +85˚C, –40˚C to +105˚C Note: Products meet RoHS standards. 2Gb x16, x32 1.2V 333–400 MHz 168-ball PoP –25˚C to +85˚C MT47 DDR2 SDRAM 168-, 216-ball PoP, 512Mb x4, x8, x16 1.8V 400–533 MHz 60-, 84-ball FBGA 0˚C to +85˚C, –40˚C to +95˚C, –40˚C to +105˚C 4Gb x32, x64 1.2V 333–533 MHz 134-, 168-, 240-ball WFBGA, –25˚C to +85˚C 216-ball UFBGA 1Gb x4, x8, x16 1.8V 333–533 MHz 60-, 84-ball FBGA 0˚C to +85˚C, –40˚C to +95˚C, –40˚C to +105˚C 6Gb x32 1.2V 333–400 MHz 168-ball VFBGA –25˚C to +85˚C x4, x8, x16 (SDP); 2Gb 1.8V 400–533 MHz 60-, 63-, 84-ball FBGA 0˚C to +85˚C, –40˚C to +95˚C, –40˚C to +105˚C 168-, 216-, 240-ball PoP, x4, x8 (2Gb DDP) 8Gb x32, x64 1.2V 333–533 MHz –25˚C to +85˚C 168-, 216-, 272-ball WFBGA 4Gb x4, x8 (2Gb DDP) 1.8V 400 MHz 63-ball FBGA 0˚C to +85˚C 16Gb x64 1.2V 400–533 MHz 216-, 220-, 253-ball VFBGA –25˚C to +85˚C Note: Products meet RoHS standards. Note: Products meet RoHS standards. MT46 DDR SDRAM MT46 Mobile LPDDR 256Mb x8, x16 2.5V 200 MHz 60-ball FBGA, 66-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C, –40˚C to +105˚C 0˚C to +70˚C, –40˚C to +85˚C, 128Mb x16 1.8V 167–200 MHz 60-ball VFBGA 512Mb x4, x8, x16 2.5V 200 MHz 60-ball FBGA, 66-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C, –40˚C to +105˚C –40˚C to +105˚C Note: Products meet RoHS 5/6 standards. 0˚C to +70˚C, –40˚C to +85˚C, 256Mb x16, x32 1.8V 167–200 MHz 60-, 90-ball VFBGA MT48 SDRAM –40˚C to +105˚C 60-, 90-ball VFBGA, WFBGA, 54-, 86-pin TSOP, 512Mb x16, x32 1.8V 167–200 MHz –40˚C to +85˚C 64Mb x8, x16, x32 3.3V 133–200 MHz 0˚C to +70˚C, –40˚C to +85˚C, –40˚C to +105˚C 152-ball PoP 54-, 90-ball VFBGA 60-, 90-ball VFBGA, 1Gb x16, x32 1.8V 167–200 MHz –40˚C to +85˚C, –40˚C to +105˚C 54-, 86-pin TSOP, 168-ball PoP

our memory. 128Mb x8, x16, x32 3.3V 133–167 MHz 54-, 90-ball VFBGA, 0˚C to +70˚C, –40˚C to +85˚C, –40˚C to +105˚C 60-, 90-ball VFBGA, 60-ball FBGA 2Gb x16, x32 1.8V 167–200 MHz –25˚C to +85˚C, –40˚C to +85˚C 168-ball PoP, 60-ball WFBGA 54-pin TSOP, 256Mb x4, x8, x16 3.3V 133–167 MHz 0˚C to +70˚C, –40˚C to +85˚C, –40˚C to +105˚C 54-ball VFBGA, 60-ball FBGA 4Gb x32 1.8V 167–200 MHz 168-, 240-ball PoP –25˚C to +85˚C, –40˚C to +85˚C 512Mb x4, x8, x16 3.3V 133 MHz 54-pin TSOP 0˚C to +70˚C, –40˚C to +85˚C 8Gb x32 1.8V 167–200 MHz 168-ball PoP –25˚C to +85˚C, –40˚C to +85˚C Note: Products meet RoHS standards. Note: Products meet RoHS 5/6 standards. your innovation. your innovation.

10 11 Component Density Bus Width RoHS I/O Voltage Access Time Package Temp Range Density Bus Width RoHS Voltage Data Rate Module Ranks Temp Range Count

® MT45 PSRAM CellularRAM Memory DDR4 SDRAM 288-pin LRDIMM Yes, 16Mb x16 1.8V 70ns 48-, 54-ball VFBGA –40˚C to +85˚C, –40˚C to +105˚C 16GB x72 36 Green 1.2V 2133 MT/s Dual 0˚C to +95˚C Green 32GB x72 72 Green 1.2V 2133 MT/s Quad 0˚C to +95˚C 32Mb x16 Green 1.8V 70ns 48-, 54-ball VFBGA –40˚C to +85˚C, –40˚C to +105˚C

64Mb x16 Green 1.8V 70ns 48-, 54-ball VFBGA –40˚C to +85˚C, –30˚C to +85˚C DDR3 SDRAM 240-pin UDIMM DRAM 128Mb x16 Green 1.8V 70ns, 85ns 54-ball VFBGA –40˚C to +85˚C, –40˚C to +105˚C 1GB x64 8 Green 1.35V 1333 MT/s Single 0˚C to +95˚C 2GB x64 4, 8 Green 1.35–1.5V 1600 MT/s Single 0˚C to +95˚C 4GB x64 8 Green 1.35–1.5V 1600–1866 MT/s Single 0˚C to +95˚C Density Bus Width I/O Voltage Depth Package Temp Range 8GB x64 16 Green 1.35–1.5V 1600–1866 MT/s Dual 0˚C to +95˚C EDW GDDR5 SGRAM Memory 16GB x64 16 Green 1.35V 1866 MT/s Dual 0˚C to +95˚C 2Gb x32 1.5V 64Mb 170-, 238-ball FBGA 0˚C to +95˚C DDR3 SDRAM 240-pin ECC UDIMM 4Gb x32 1.5V 128Mb 170-, 238-ball FBGA 0˚C to +95˚C 1GB x72 9 Green 1.5V 1333 MT/s Single 0˚C to +95˚C 2GB x72 9, 18 Green 1.35–1.5V 1333–2133 MT/s Single, Dual 0˚C to +95˚C Modules 4GB x72 9, 18 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 8GB x72 18 Green 1.35–1.5V 1333–1866 MT/s Dual 0˚C to +95˚C 16GB x72 18 Green 1.35–1.5V 1600–1866 MT/s Dual 0˚C to +95˚C Modules DDR3 SDRAM 240-pin VLP ECC UDIMM 2GB x72 9 Green 1.35V 1333 MT/s Single 0˚C to +95˚C 4GB x72 9, 18 Green 1.35–1.5V 1333–1600 MT/s Single, Dual 0˚C to +95˚C 8GB x72 18 Green 1.35–1.5V 1333–1600 MT/s Dual 0˚C to +95˚C Component Density Bus Width RoHS Voltage Data Rate Module Ranks Temp Range 16GB x72 18 Green 1.35V 1600 MT/s Dual 0˚C to +95˚C Count DDR3 SDRAM 244-pin Mini UDIMM DDR4 SDRAM 288-pin UDIMM 2GB x72 9 Green 1.35–1.5V 1333–1600 MT/s Single 0˚C to +95˚C 4GB x64 8 Green 1.2V 2133 MT/s Single 0˚C to +95˚C 4GB x72 9, 18 Green 1.35–1.5V 1333 MT/s Single, Dual 0˚C to +95˚C 8GB x64 16 Green 1.2V 2133 MT/s Dual 0˚C to +95˚C 8GB x72 18 Green 1.35V 1600 MT/s Dual –40˚C to +95˚C DDR4 SDRAM 288-pin ECC UDIMM DDR3 SDRAM 244-pin VLP Mini-UDIMM 4GB x72 9 Green 1.2V 2133 MT/s Single 0˚C to +95˚C 2GB x72 9 Green 1.5V 1333 MT/s Single 0˚C to +95˚C, –40˚C to +95˚C 8GB x72 18 Green 1.2V 2133 MT/s Dual 0˚C to +95˚C 4GB x72 9 Green 1.35V 1333 MT/s Single 0˚C to +95˚C, –40˚C to +95˚C DDR4 SDRAM 260-pin SODIMM 8GB x72 18 Green 1.35V 1600 MT/s Dual 0˚C to +95˚C 4GB x64 8 Green 1.2V 2133–2400 MT/s Single 0˚C to +95˚C DDR3 SDRAM 204-pin SODIMM 8GB x64 16 Green 1.2V 2133–2400 MT/s Dual 0˚C to +95˚C 1GB x64 4, 8 Green 1.35V 1333–1600 MT/s Single 0˚C to +95˚C DDR4 SDRAM 288-pin ECC SODIMM 2GB x64 4, 8, 16 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 8GB x72 18 Green 1.2V 2133–2400 MT/s Dual 0˚C to +95˚C 1.35V 4GB x64 8, 16 Green 1600–1866 MT/s Single, Dual 0˚C to +95˚C and RS

our memory. DDR4 SDRAM 288-pin RDIMM 1.35–1.5V 8GB x64 16 Green 1600–1866 MT/s Dual 0˚C to +95˚C 4GB x72 9 Green 1.2V 2133 MT/s Single 0˚C to +95˚C and RS 8GB x72 18 Green 1.2V 2133 MT/s Single, Dual 0˚C to +95˚C 16GB x64 16 Green 1.35V 1866 MT/s Dual 0˚C to +95˚C 16GB x72 36 Green 1.2V 2133 MT/s Dual 0˚C to +95˚C DDR3 SDRAM 204-pin ECC SODIMM

DDR4 SDRAM 288-pin VLP RDIMM 4GB x72 18 Green 1.35V 1333–1600 MT/s Dual 0˚C to +95˚C 4GB x72 18 Green 1.2V 2133 MT/s Single 0˚C to +95˚C 8GB x72 18 Green 1.35V 1333–1600 MT/s Dual 0˚C to +95˚C 8GB x72 36 Green 1.2V 2133 MT/s Dual 0˚C to +95˚C DDR3 SDRAM 200-pin SORDIMM your innovation. your innovation. 16GB x72 36 Green 1.35V 1600 MT/s Quad 0˚C to +95˚C 12 13 Component Component Density Bus Width RoHS Voltage Data Rate Module Ranks Temp Range Density Bus Width RoHS Voltage Data Rate Module Ranks Temp Range Count Count DDR3 SDRAM 240-pin RDIMM DDR2 SDRAM 240-pin RDIMM

1GB x72 9 Green 1.5V 1333 MT/s Single 0˚C to +95˚C 512MB x72 9 Yes 1.8V 667 MT/s Single 0˚C to +85˚C 2GB x72 9, 18 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 1GB x72 9, 18 Yes 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 4GB x72 9, 18, 36 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 2GB x72 18, 36 Yes, Green 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 8GB x72 18, 36 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 4GB x72 18, 36 Yes 1.8V 667–800 MT/s Dual 0˚C to +85˚C 16GB x72 18, 36 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 8GB x72 36, 72 Yes 1.8V 667–800 MT/s Dual, Quad 0˚C to +85˚C 32GB x72 36, 72 Green 1.35–1.5V 1066–1866 MT/s Dual, Quad 0˚C to +95˚C DDR2 SDRAM 240-pin VLP RDIMM

DDR3 SDRAM 240-pin VLP RDIMM 512MB x72 9 Yes 1.8V 667 MT/s Single 0˚C to +85˚C 2GB x72 9, 18 Green 1.35–1.5V 1333–1600 MT/s Single, Dual 0˚C to +95˚C 1GB x72 9 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 4GB x72 18 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C, –40˚C to +95˚C 2GB x72 18 Yes 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C 8GB x72 18 Green 1.35–1.5V 1333–1866 MT/s Single, Dual 0˚C to +95˚C 4GB x72 18, 36 Yes 1.8V 667–800 MT/s Dual 0˚C to +85˚C

16GB x72 36 Green 1.35–1.5V 1333–1866 MT/s Dual, Quad 0˚C to +95˚C DDR2 SDRAM 240-pin FBDIMM Modules DDR3 SDRAM 240-pin LRDIMM 1GB x72 9 Yes 1.8V 667–800 MT/s Single 0˚C to +95˚C 16GB x72 36 Green 1.35V 1600 MT/s Quad 0˚C to +95˚C 2GB x72 18 Yes 1.8V 667–800 MT/s Dual 0˚C to +95˚C 32GB x72 72 Green 1.35V–1.5V 1333–1866 MT/s Quad 0˚C to +95˚C 4GB x72 36 Yes 1.8V 667–800 MT/s Dual, Quad 0˚C to +95˚C DDR3 SDRAM 244-pin Mini-RDIMM 8GB x72 36, 72 Yes 1.8V 667–800 MT/s Dual, Quad 0˚C to +95˚C

4GB x72 18 Green 1.5V 1333 MT/s Dual 0˚C to +95˚C DDR2 SDRAM 244-pin Mini-RDIMM 8GB x72 18 Green 1.35V 1333 MT/s Dual –40˚C to +95˚C 512MB x72 9 Yes 1.8V 667 MT/s Single 0˚C to +85˚C DDR3 SDRAM 244-pin VLP Mini-RDIMM 1GB x72 9 Yes 1.8V 800 MT/s Single 0˚C to +85˚C 2GB x72 18 Yes, Green 1.8V 800 MT/s Dual 0˚C to +85˚C 4GB x72 9 Green 1.35V 1333 MT/s Single –40˚C to +95˚C 8GB x72 18 Green 1.35V 1333 MT/s Dual 0˚C to +95˚C, –40˚C to +95˚C DDR2 SDRAM 244-pin VLP Mini-RDIMM DDR2 SDRAM 240-pin UDIMM 512MB x72 9 Yes 1.8V 667 MT/s Single 0˚C to +85˚C 1GB x72 9 Yes 1.8V 800 MT/s Single 0˚C to +85˚C 512MB x64 4 Yes 1.8V 800 MT/s Single 0˚C to +85˚C 2GB x72 18 Yes 1.8V 800 MT/s Dual 0˚C to +85˚C 1GB x64 8 Green 1.8V 800 MT/s Single 0˚C to +85˚C 4GB x72 18 Yes 1.8V 667 MT/s Dual 0˚C to +85˚C 2GB x64 16 Yes 1.8V 800 MT/s Dual 0˚C to +85˚C DDR SDRAM 100-pin UDIMM DDR2 SDRAM 240-pin ECC UDIMM 512MB x32 8 Yes 2.5V 400 MT/s Single 0˚C to +70˚C 1GB x72 9 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 2GB x72 9, 18 Yes 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C DDR SDRAM 168-pin UDIMM 4GB x72 18 Yes 1.8V 667 MT/s Dual 0˚C to +85˚C 64MB x64 4 Yes 3.3V 133 MHz Single 0˚C to +70˚C DDR2 SDRAM 200-pin SODIMM 128MB x64 4 Yes 3.3V 133 MHz Single 0˚C to +70˚C 256MB x64 8, 16 Yes 3.3V 133 MHz Single, Dual 0˚C to +70˚C 256MB x64 4 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 512MB x64 4, 8 Yes, Green 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C DDR SDRAM 184-pin UDIMM

our memory. 1GB x64 8, 16 Yes, Green 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C, –40˚C to 95˚C 256MB x64 4 Yes 2.5V 400 MT/s Single 0˚C to +70˚C 2GB x64 8, 16 Yes 1.8V 667–800 MT/s Single, Dual 0˚C to +85˚C, –40˚C to 95˚C 512MB x64 8 Yes 2.5V 400 MT/s Single 0˚C to +70˚C 4GB x64 16 Yes 1.8V 800 MT/s Dual 0˚C to +85˚C 1GB x64 16 Yes 2.5V 400 MT/s Dual 0˚C to +70˚C DDR2 SDRAM 200-pin SORDIMM DDR SDRAM 168-pin ECC UDIMM 512MB x72 9 Yes 1.8V 667 MT/s Single 0˚C to +85˚C 128MB x72 9 Yes 3.3V 133 MHz Single 0˚C to +70˚C 1GB x72 9 Yes 1.8V 667–800 MT/s Single 0˚C to +85˚C 256MB x72 18 Yes 3.3V 133 MHz Dual 0˚C to +70˚C 2GB x72 18 Yes 1.8V 800 MT/s Dual 0˚C to +85˚C your innovation. your innovation.

14 15 Component Component Density Bus Width RoHS Voltage Data Rate Module Ranks Temp Range Density Bus Width RoHS Voltage Clock Rate Module Ranks Temp Range Count Count DDR SDRAM 184-pin ECC UDIMM SDRAM 144-pin SODIMM

512MB x64 9 Yes 2.5V 400 MT/s Single 0˚C to +70˚C 64MB x64 4 Yes 3.3V 133 MHz Single 0˚C to +70˚C 1GB x64 18 Yes 2.5V 400 MT/s Dual 0˚C to +70˚C 128MB x64 4, 8 Yes 3.3V 133 MHz Single, Dual 0˚C to +70˚C DDR SDRAM 144-pin SODIMM 256MB x64 8 Yes, 5/6 3.3V 133 MHz Dual 0˚C to +70˚C 512MB x64 16 Yes 3.3V 133 MHz Dual 0˚C to +70˚C 64MB x64 4 Yes 3.3V 133 MHz Single 0˚C to +70˚C 128MB x64 4, 8 Yes 3.3V 133 MHz Single 0˚C to +70˚C SDRAM 168-pin RDIMM 256MB x64 8 Yes 3.3V 133 MHz Single, Dual 0˚C to +70˚C 128MB x72 9 Yes, 5/6 3.3V 133 MHz Single 0˚C to +70˚C 512MB x64 16 Yes 3.3V 133 MHz Dual 0˚C to +70˚C 256MB x72 9 Yes 3.3V 133 MHz Single 0˚C to +70˚C DDR SDRAM 200-pin SODIMM 512MB x72 18 Yes 3.3V 133 MHz Single 0˚C to +70˚C 128MB x64 4 Yes 2.5V 333 MT/s Single 0˚C to +70˚C 256MB x64 4 Yes 2.5V 333–400 MT/s Single 0˚C to +70˚C, –40˚C to +95˚C Modules 512MB x64 8 Yes 2.5V 333–400 MT/s Single, Dual 0˚C to +70˚C 1GB x64 16 Yes 2.5V 400 MT/s Dual 0˚C to +70˚C DDR SDRAM 200-pin ECC SODIMM Hybrid Memory 256MB x72 9 Yes 2.5V 333 MT/s Single 0˚C to +70˚C, –40˚C to +95˚C 512MB x72 9 Yes 2.5V 333–400 MT/s Single 0˚C to +70˚C Cube (HMC) 1GB x72 18 Yes 2.5V 333–400 MT/s Dual 0˚C to +70˚C DDR SDRAM 184-pin RDIMM Link Description MAX Effective BW 256MB x72 9 Yes 2.5V 400 MT/s Single 0˚C to +70˚C Density Links Package Description (Gb/s) (GB/s)

512MB x72 9 Yes 2.5V 333–400 MT/s Single 0˚C to +70˚C HMC 1GB x72 18 Yes 2.5V 333–400 MT/s Single, Dual 0˚C to +70˚C Hybrid Memory Cube

2GB x72 36 Yes 2.5V 400 MT/s Dual 0˚C to +70˚C 2GB 15G SR x4 160 896-ball BGA, 31mm x 31mm x 4mm DDR SDRAM 184-pin VLP RDIMM 4GB 15G SR x4 160 896-ball BGA, 31mm x 31mm x 4mm 512MB x72 9 Yes 2.5V 400 MT/s Single 0˚C to +70˚C 2GB 15G SR x2 120 666-ball FBGA, 16mm x19.5mm x 3.9mm 1GB x72 18 Yes 2.5V 333 MT/s Dual 0˚C to +70˚C 4GB 15G SR x2 120 666-ball FBGA, 16mm x19.5mm x 3.9mm Bare Die Component Density Bus Width RoHS Voltage Clock Rate Module Ranks Temp Range Count SDRAM 168-pin UDIMM Bare Die and 64MB x64 4 Yes 3.3V 133 MHz Single 0˚C to +70˚C 128MB x64 4 Yes, 5/6 3.3V 133 MHz Single 0˚C to +70˚C Wafer-Level Products 256MB x64 8, 16 Yes 3.3V 133 MHz Single, Dual 0˚C to +70˚C our memory. SDRAM 168-pin ECC UDIMM Requirements for increasingly smaller form factors and higher memory densities are fueling the need for an array of bare die memory solutions. Our bare die offerings 128MB x72 9 Yes 3.3V 133 MHz Single 0˚C to +70˚C are designed to enable you to choose the wafer-level products that best meet your 256MB x72 18 Yes 3.3V 133 MHz Dual 0˚C to +70˚C project’s needs. And we’re committed to delivering bare die products that maintain reliability and quality levels similar to our fully tested and burned-in packaged devices.

Find out more at micron.com/baredie. your innovation. your innovation.

16 17 NAND Flash Managed NAND NAND Bus Bus Density Voltage Interface Package Temp Range Density Voltage Technology JEDEC Package Temp Range Applications Width Width

MT29 SLC NAND Flash* MTFC e•MMC Memory for Embedded 1Gb x8, x16 1.8, 3.3V Async (ONFI 1.0) 48-pin TSOP, 63-ball VFBGA, Wafer 0˚C to +70˚C, –40˚C to +85˚C 3.3V 2GB x8 CC 25nm MLC 4.41 153-ball WFBGA –25˚C to +85˚C Consumer 2Gb x8, x16 1.8, 3.3V Async (ONFI 1.0) 48-pin TSOP, 63-ball VFBGA, Wafer 0˚C to +70˚C, –40˚C to +85˚C (3.3V/1.8V VCCQ) 3.3V 25nm MLC/ 4.41, 100-ball LBGA, 153-ball TFBGA, –25˚C to +85˚C, Consumer, Industrial, 4Gb x8, x16 1.8, 3.3V Async (ONFI 1.0) 48-pin TSOP, 63-ball VFBGA, Wafer 0˚C to +70˚C, –40˚C to +85˚C 4GB x8 CC (3.3V/1.8V VCCQ) 20nm MLC 4.51 153-ball WFBGA –40˚C to +85˚C Automotive Async (ONFI 1.0)/ 48-pin TSOP, 63-ball VFBGA, 8Gb x8, x16 1.8, 3.3V 0˚C to +70˚C, –40˚C to +85˚C 4.41, Sync (ONFI 2.1) 100-ball VBGA, Wafer 3.3VCC 25nm MLC/ 100-ball LBGA, 153-ball TFBGA, –25˚C to +85˚C, Consumer, Industrial,

8GB x8 4.51, Managed (3.3V/1.8V VCCQ) 20nm MLC 153-ball WFBGA –40˚C to +85˚C Automotive

Async/Sync 48-pin TSOP, 63-ball VFBGA, NAND 16Gb x8, x16 1.8, 3.3V 0˚C to +70˚C, –40˚C to +85˚C 5.0 (ONFI 2.1/2.2) 100-ball VBGA, Wafer 4.41, 3.3V 25nm MLC/ 100-ball LBGA, 169-ball TFBGA, –25˚C to +85˚C, Consumer, Industrial, Async/Sync 16GB x8 CC 4.51, 32Gb x8 3.3V 48-pin TSOP, 100-ball VBGA, 132-ball VBGA 0˚C to +70˚C, –40˚C to +85˚C (3.3V/1.8V V ) 20nm MLC 169-ball WFBGA –40˚C to +85˚C Automotive (ONFI 2.1/2.2/3.0) CCQ 5.0 Async/Sync 48-pin TSOP, 100-ball VBGA, 100-ball TBGA, 4.41, 64Gb x8 3.3V 0˚C to +70˚C, –40˚C to +85˚C 3.3V 25nm MLC/ 100-ball LBGA, 169-ball TFBGA, –25˚C to +85˚C, Consumer, Industrial, (ONFI 2.1/2.2/3.0) 132-ball VBGA, 152-ball VBGA 32GB x8 CC 4.51, (3.3V/1.8V VCCQ) 20nm MLC 169-ball VFBGA –40˚C to +85˚C Automotive Async/Sync 48-pin TSOP, 100-ball TBGA, 100-ball LBGA, 5.0 128Gb x8 3.3V 0˚C to +70˚C, –40˚C to +85˚C (ONFI 2.1/2.2/3.0) 132-ball TBGA, 152-ball VBGA 4.41, 3.3V 25nm MLC/ –25˚C to +85˚C, Consumer, Industrial, 64GB x8 CC 4.51, 169-ball LBGA/LFBGA 256Gb x8 3.3V Async/Sync (ONFI 2.2/3.0) 100-, 132-ball LBGA, 152-ball TBGA 0˚C to +70˚C, –40˚C to +85˚C (3.3V/1.8V V ) 20nm MLC –40˚C to +85˚C Automotive CCQ 5.0 512Gb x8 3.3V Async/Sync (ONFI 3.0) 152-ball LBGA 0˚C to +70˚C, –40˚C to +85˚C Note: Products meet RoHS standards. Enhanced SLC partition up to 100% of the user area. NAND Small Page (SP) Flash*

128Mb x8 3.3V Async 48-pin TSOP –40˚C to +85˚C 256Mb x8 3.3V Async 48-pin TSOP, 55-ball VFBGA –40˚C to +85˚C Density Package RoHS Voltage Interface Temp Range 512Mb x8 1.8, 3.3V Async 48-pin TSOP, 63-ball VFBGA –40˚C to +85˚C MTED and MTFD Embedded USBs MT29 MLC NAND Flash* 2GB eUSB Yes 5V, 3.3V USB 2.0 0˚C to +70˚C, –40˚C to +85˚C 16Gb x8 3.3V Async/Sync (ONFI 2.2) 48-pin TSOP, Wafer 0˚C to +70˚C, –40˚C to +85˚C 4GB eUSB Yes 5V, 3.3V USB 2.0 0˚C to +70˚C, –40˚C to +85˚C 32Gb x8 3.3V Async/Sync (ONFI 2.2/2.3) 48-pin TSOP, 100-ball VBGA, Wafer 0˚C to +70˚C, –40˚C to +85˚C 8GB eUSB Yes 5V, 3.3V USB 2.0 0˚C to +70˚C, –40˚C to +85˚C 64Gb x8 3.3V Async/Sync (ONFI 2.2/2.3) 48-pin TSOP, 100-ball VBGA, Wafer 0˚C to +70˚C, –40˚C to +85˚C 16GB eUSB Yes 5V, 3.3V USB 2.0 0˚C to +70˚C, –40˚C to +85˚C Async/Sync 48-pin TSOP, 100-ball LBGA, 100-ball TBGA, 128Gb x8 3.3V 0˚C to +70˚C, –40˚C to +85˚C (ONFI 2.2/2.3/3.0) 132-ball TBGA, 152-ball VBGA, Wafer 196Gb x8 3.3V Async/Sync (ONFI 3.2) 272-ball VFBGA 0˚C to +70˚C Density Bus Width RoHS Voltage Bits/Cell Package Temp Range Async/Sync 48-pin TSOP, 100-ball LBGA, 100-ball TBGA, 256Gb x8 3.3V 0˚C to +70˚C, –40˚C to +85˚C (ONFI 2.2/2.3/3.0) 132-ball TBGA, 152-ball VBGA MT29 Enhanced ClearNAND Flash Memory 512Gb x8 3.3V Async/Sync (ONFI 2.2/3.2) 132-ball LBGA, 152-ball TBGA, 272-ball TFBGA 0˚C to +70˚C, –40˚C to +85˚C 32GB x8 Yes 3.3V MLC 100-ball LBGA 0˚C to +70˚C

our memory. 1Tb x8 3.3V Async/Sync (ONFI 3.2) 152-ball LBGA, 272-ball TFBGA/LFBGA 0˚C to +70˚C, –40˚C to +85˚C 64GB x8 Yes 3.3V MLC 100-ball LBGA 0˚C to +70˚C 2Tb x8 3.3V Async/Sync (ONFI 3.2) 152-ball LBGA, 272-ball LFBGA 0˚C to +70˚C

Density Bus Width Voltage Technology Package Temp Range

MT29 Serial NAND Flash* 1Gb x1 3.3V SLC 63-ball VFBGA 0˚C to +70˚C, –40˚C to +85˚C 2Gb x1 3.3V SLC 63-ball VFBGA 0˚C to +70˚C, –40˚C to +85˚C your innovation. your innovation. 4Gb x1 3.3V SLC 63-ball VFBGA 0˚C to +70˚C, –40˚C to +85˚C 18 *Products meet RoHS standards. 19 Density Bus Width RoHS Voltage Speed Package Boot Block Temp Range NOR Flash M58BW Parallel NOR Flash Automotive 45ns, 55ns, 80-ball LBGA, 16Mb x32 Yes, No 2.7–3.6V Bottom Boot –40˚C to +125˚C 70ns 80-pin PQFP 80-ball LBGA, 32Mb x32 Yes, No 2.7–3.6V 45ns, 55ns Bottom Boot –40˚C to +125˚C 80-pin PQFP Density Bus Width RoHS Voltage Speed Package Boot Block Temp Range Note: Available in tape and reel.

M29AW Parallel NOR Flash Automotive M58WR Parallel NOR Flash Automotive 32Mb x16 Yes 1.7–2.0V 70ns 56-ball VFBGA Bottom Boot –40˚C to +85˚C 110ns, 56-pin TSOP, 512Mb x16 Yes 2.7–3.6V High/Low Lock –40˚C to +85˚C 100ns 64-ball BGA 64Mb x16 Yes 1.7–2.0V 70ns 56-ball VFBGA Bottom/Top Boot –40˚C to +85˚C 110ns, 56-pin TSOP, Note: Available in tray or tape and reel. 1Gb x16 Yes 2.7–3.6V High/Low Lock –40˚C to +85˚C 100ns 64-ball BGA G18 Parallel NOR Flash Automotive Note: Available in tape and reel. 104ns, 256Mb x16 Yes 1.7–2.0V 64-ball TBGA Uniform, A/D MUX –40˚C to +105˚C M29DW Parallel NOR Flash Automotive 133 MHz/Sync –40˚C to +85˚C, 104ns, 32Mb x8/x16 Yes 2.7–3.6V 70ns 48-pin TSOP Multibank 512Mb x16 Yes 1.7–2.0V 64-ball TBGA Uniform, A/D MUX –40˚C to +105˚C –40˚C to +125˚C 133 MHz/Sync –40˚C to +85˚C, 104ns, 256Mb x16 Yes 2.7–3.6V 70ns 56-pin TSOP Multibank 1Gb x16 Yes 1.7–2.0V 64-ball TBGA Uniform, A/D MUX –40˚C to +105˚C –40˚C to +125˚C 133 MHz/Sync Note: Available in tray or tape and reel. Note: Available in tray or tape and reel. M29F Parallel NOR Flash Automotive G18 Parallel NOR Flash Embedded 44-pin SOIC, –40˚C to +85˚C, 96ns, Uniform, 2Mb x8/x16 Yes 4.5–5.5V 55ns Bottom/Top Boot 256Mb x16 Yes 1.7–2.0V 64-ball Easy BGA –40˚C to +85˚C 48-pin TSOP –40˚C to +125˚C 133 MHz/Sync AD, AA/D MUX 44-pin SOIC, –40˚C to +85˚C, 96ns, Uniform, 4Mb x8/x16 Yes, No 4.5–5.5V 55ns Bottom/Top Boot 512Mb x16 Yes 1.7–2.0V 64-ball Easy BGA –40˚C to +85˚C 48-pin TSOP –40˚C to +125˚C 133 MHz/Sync AD, AA/D MUX NOR 44-pin SOIC, –40˚C to +85˚C, 96ns, Uniform, 8Mb x8/x16 Yes 4.5–5.5V 55ns Bottom/Top Boot 1Gb x16 Yes 1.7–2.0V 64-ball Easy BGA –40˚C to +85˚C 48-pin TSOP –40˚C to +125˚C 133 MHz/Sync AD, AA/D MUX –40˚C to +85˚C, Note: Available in tray or tape and reel. Also available in AD and AA/D MUX configurations for up to 50%-reduced active ball count. 16Mb x8/x16 Yes 4.5–5.5V 55ns 48-pin TSOP Bottom/Top Boot –40˚C to +125˚C J3 Parallel NOR Flash Embedded Note: Available in tray or tape and reel. 56-pin TSOP, Uniform, 32Mb x8/x16 Yes 2.7–3.6V 75ns –40˚C to +85˚C M29W Parallel NOR Flash Automotive 64-ball Easy BGA In-Sys Pgm 48-pin TSOP, –40˚C to +85˚C, 56-pin TSOP, Uniform, 4Mb x8/x16 Yes 2.7–3.6V 55ns Bottom/Top Boot 64Mb x8/x16 Yes, No 2.7–3.6V 75ns –40˚C to +85˚C 48-ball TFBGA –40˚C to +125˚C 64-ball Easy BGA In-Sys Pgm 48-pin TSOP, –40˚C to +85˚C, 56-pin TSOP, Uniform, 8Mb x8/x16 Yes 2.7–3.6V 70ns Bottom/Top Boot 128Mb x8/x16 Yes, No 2.7–3.6V 75ns –40˚C to +85˚C 48-ball TFBGA –40˚C to +125˚C 64-ball Easy BGA In-Sys Pgm 48-pin TSOP, –40˚C to +85˚C, 56-pin TSOP, 16Mb x8/x16 Yes 2.7–3.6V 70ns, 80ns Bottom/Top Boot 256Mb x8/x16 Yes, No 2.7–3.6V 95ns, 105ns Uniform –40˚C to +85˚C 48-ball TFBGA –40˚C to +125˚C 64-ball Easy BGA 48-pin TSOP, –40˚C to +85˚C, 32Mb x8/x16 Yes 2.7–3.6V 70ns, 80ns Bottom/Top Boot M28W Parallel NOR Flash Embedded 48-ball TFBGA –40˚C to +125˚C 48-pin TSOP, 48-, 56-pin TSOP, 16Mb x16 Yes 2.7–3.6V 70ns Bottom/Top Boot –40˚C to +85˚C our memory. Bottom/Top Boot, –40˚C to +85˚C, 64Mb x8/x16 Yes 2.7–3.6V 60ns, 70ns 48-ball TFBGA, 46-ball TFBGA High/Low Lock –40˚C to +125˚C 64-ball TBGA 48-pin TSOP, 32Mb x16 Yes 2.7–3.6V 70ns Bottom/Top Boot –40˚C to +85˚C 56-pin TSOP, 47-ball TFBGA –40˚C to +85˚C, 128Mb x8/x16 Yes 2.7–3.6V 70ns 64-ball FBGA, High/Low Lock 48-pin TSOP, –40˚C to +125˚C 64Mb x16 Yes 2.7–3.6V 70ns Bottom/Top Boot –40˚C to +85˚C 64-ball TBGA 48-ball TFBGA 56-pin TSOP, –40˚C to +85˚C, Notes: Available in tray or tape and reel. Features: Hardware write protection, OTP space, OTP SD, Krypto® Flex Lock, Krypto Encrypted Access SD. 256Mb x8/x16 Yes 2.7–3.6V 70ns High/Low Lock 64-ball FBGA –40˚C to +125˚C –40˚C to +85˚C, 512Mb x8/x16 Yes 2.7–3.6V 70ns 56-pin TSOP Low Lock –40˚C to +125˚C

your innovation. your innovation. Note: Available in tray or tape and reel. 20 21 Density Bus Width RoHS Voltage Speed Package Boot Block Temp Range Density Bus Width RoHS Voltage Speed Package Boot Block Temp Range

M29DW Parallel NOR Flash Embedded P30 Parallel NOR Flash Embedded (continued)

48-pin TSOP, 56-pin TSOP, 32Mb x8/x16 Yes 2.7–3.6V 70ns Multibank –40˚C to +85˚C Bottom/Top Boot, 48-ball-TFBGA 512Mb x16 Yes 1.7–3.6V 100ns, 110ns 64-ball Easy BGA, –40˚C to +85˚C Uniform 64-ball TBGA, 88-ball Quad+ BGA 128Mb x8/x16, x16 Yes 2.7–3.6V 60ns, 70ns Multibank –40˚C to +85˚C 56-pin TSOP 56-pin TSOP, Bottom/Top Boot, 1Gb x16 Yes 1.7–2.0V 100ns, 110ns –40˚C to +85˚C 256Mb x16 Yes 2.7–3.6V 70ns 56-pin TSOP Multibank –40˚C to +85˚C 64-ball Easy BGA Uniform 2Gb x16 Yes 1.7–3.6V 105ns 64-ball Easy BGA Uniform –40˚C to +85˚C M29EW Parallel NOR Flash Embedded P33 Parallel NOR Flash Embedded 48-, 56-pin TSOP, Bottom/Top Boot, 64Mb x8/x16 Yes 2.7–3.6V 60ns, 70ns 64-ball FBGA, High/Low Lock, –40˚C to +85˚C 56-pin TSOP, 64Mb x16 Yes 2.3–3.6V 60ns, 70ns Bottom/Top Boot –40˚C to +85˚C 48-ball BGA Secure 64-ball Easy BGA 56-pin TSOP, High/Low Lock, 56-pin TSOP, Bottom/Top Boot, 128Mb x8/x16 Yes 2.7–3.6V 60ns, 70ns –40˚C to +85˚C 128Mb x16 Yes 2.3–3.6V 60ns, 70ns –40˚C to +85˚C 64-ball FBGA Secure 64-ball Easy BGA OTP 100ns, 56-pin TSOP, High/Low Lock, 56-pin TSOP, Bottom/Top Boot, 256Mb x8/x16 Yes 2.7–3.6V –40˚C to +85˚C 256Mb x16 Yes, No 2.3–3.6V 85ns, 95ns –40˚C to +85˚C 110ns 64-ball FBGA Secure 64-ball Easy BGA OTP 100ns, 56-pin TSOP, High/Low Lock, 512Mb x8/x16 Yes 2.7–3.6V –40˚C to +85˚C 56-pin TSOP, Bottom/Top Boot, 110ns 64-ball FBGA Secure 512Mb x16 Yes 2.3–3.6V 95ns, 105ns –40˚C to +85˚C 64-ball Easy BGA Uniform, OTP 100ns, 56-pin TSOP, High/Low Lock, 1Gb x8/x16 Yes 2.7–3.6V –40˚C to +85˚C 110ns 64-ball FBGA Secure 56-pin TSOP, Bottom/Top Boot, 1Gb x16 Yes 2.3–3.6V 95ns, 105ns –40˚C to +85˚C 2Gb x8/x16 Yes 2.7–3.6V 100ns 64-ball FBGA High/Low Lock –40˚C to +85˚C 64-ball Easy BGA Uniform M29W Parallel NOR Flash Embedded 48-ball TFBGA, 4Mb x8/x16 Yes 2.7–3.6V 55ns, 70ns Bottom/Top Boot –40˚C to +85˚C Density Bus Width RoHS Voltage Speed Package Type Temp Range 48-pin TSOP 48-ball TFBGA, 8Mb x8/x16 Yes 2.7–3.6V 45ns, 70ns Bottom/Top Boot –40˚C to +85˚C M25P Serial NOR Flash Automotive (Legacy) 48-pin TSOP NOR 48-ball TFBGA, 8-pin SOP2 Narrow, –40˚C to +85˚C, 16Mb x8/x16 Yes 2.7–3.6V 70ns Bottom/Top Boot –40˚C to +85˚C 1Mb x1 Yes 2.3–3.6V 50 MHz Data Storage 48-pin TSOP 8-pin U-PDFN –40˚C to +125˚C 48-ball TFBGA, –40˚C to +85˚C, 32Mb x8/x16 Yes 2.7–3.6V 70ns Bottom/Top Boot –40˚C to +85˚C 2Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SOP2 Narrow Data Storage 48-pin TSOP –40˚C to +125˚C 64-ball FBGA, 8-pin SOP2 Narrow, –40˚C to +85˚C, Bottom/Top Boot, 4Mb x1 Yes 2.3–3.6V 75 MHz Data Storage 48-ball TFBGA, 8-pin U-PDFN –40˚C to +125˚C 64Mb x8/x16 Yes 2.7–3.6V 70ns High/Low Lock, –40˚C to +85˚C 48-, 56-pin TSOP, 8-pin SOP2 Narrow, –40˚C to +85˚C, Secure 8Mb x1 Yes 2.7–3.6V 75 MHz Data Storage 64-ball TBGA 8-pin SOP2 Wide –40˚C to +125˚C 64-ball FBGA, 8-pin SOP2 Narrow, –40˚C to +85˚C, 16Mb x1 Yes 2.7–3.6V 75 MHz Data Storage 64-pin LBGA High/Low Lock, 8-pin SOP2 Wide –40˚C to +125˚C 128Mb x8/x16 Yes 2.7–3.6V 70ns –40˚C to +85˚C 64-ball TBGA, Secure 8-pin SOP2 Wide, –40˚C to +85˚C, 32Mb x1 Yes 2.7–3.6V 75 MHz Data Storage 56-pin TSOP 16-pin SOP2 –40˚C to +125˚C 64-ball FBGA, –40˚C to +85˚C, 64Mb x1 Yes 2.7–3.6V 75 MHz 16-pin SOP2 Data Storage 256Mb x8/x16 Yes 2.7–3.6V 70ns 64-ball TBGA, High/Low Lock –40˚C to +85˚C –40˚C to +125˚C 56-pin TSOP Note: Available in tray, tube, or tape and reel. P30 Parallel NOR Flash Embedded M25PE Serial NOR Flash Automotive (Page Erase) our memory. 56-pin TSOP, 64Mb x16 Yes 1.7–2.0V 65ns, 75ns Bottom/Top Boot –40˚C to +85˚C 64-ball Easy BGA 4Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SOP2 Narrow Page Erase –40˚C to +85˚C 56-pin TSOP, 8Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SOP2 Narrow Page Erase –40˚C to +85˚C Bottom/Top Boot, 128Mb x16 Yes, No 1.7–2.0V 65ns, 75ns 64-ball Easy BGA, –40˚C to +85˚C Note: Available in tape and reel. OTP 88-ball Quad+ BGA 56-pin TSOP, 256Mb x16 Yes, No 1.7–2.0V 100ns, 110ns 64-ball Easy BGA, Bottom/Top Boot –40˚C to +85˚C 88-ball Quad+ BGA (P30 Parallel NOR Flash Embedded continued on next page) your innovation. your innovation.

22 23 Density Bus Width RoHS Voltage Speed Package Type Temp Range Density Bus Width RoHS Voltage Speed Package Type Temp Range

M25PX Serial NOR Flash Automotive (Dual I/O) M25P Serial NOR Flash Embedded (continued)

–40˚C to +85˚C, 64Mb** x1 Yes 2.7–3.6V 75 MHz 16-pin SO16 Wide, 8-pin V-PDFN (8x6) Data Storage –40˚C to +85˚C 8Mb x1/x2 Yes 2.7–3.6V 75 MHz 8-pin SOP2 Narrow Dual I/O –40˚C to +125˚C 128Mb x1 Yes 2.7–3.6V 75 MHz 8-pin V-PDFN (8x6), 16-pin SO16 Wide Data Storage –40˚C to +85˚C 16Mb x1/x2 Yes 2.7–3.6V 75 MHz 8-pin SOP2 Narrow Dual I/O –40˚C to +85˚C Note: Available in tray, tube, or tape and reel. *N25Q032 suggested for new design. **N25Q064 suggested for new design. 8-pin V-PDFN-8, 32Mb x1/x2 Yes 2.7–3.6V 75 MHz Dual I/O –40˚C to +85˚C 24-ball T-PBGA-24b05 M25PE Serial NOR Flash Embedded Note: Available in tube or tape and reel. 1Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Narrow, KGD Page Erase –40˚C to +85˚C N25Q Serial NOR Flash Automotive (Multiple I/O) 2Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Narrow, KGD Page Erase –40˚C to +85˚C 8-pin SO8 Narrow, 8-pin V-PDFN (6x5), 8-pin SP2 Narrow, 4Mb x1 Yes 2.7–3.6V 75 MHz Page Erase –40˚C to +85˚C –40˚C to +85˚C, KGD 32Mb x1/x2/x4 Yes 2.7–3.6V 108 MHz 16-pin SOP2 Wide, Multi I/O –40˚C to +125˚C 8-pin SO8 Narrow, 8-pin SO8 Wide, 16-pin SOP2 8Mb x1 Yes 2.7–3.6V 75 MHz Page Erase –40˚C to +85˚C 8-pin V-PDFN (6x5) 32Mb x1/x2/x4 Yes 1.7–2.0V 108 MHz 8-pin SOP2 Wide Multi I/O –40˚C to +125˚C 16Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Wide, 8-pin V-PDFN (6x5) Page Erase –40˚C to +85˚C 8-pin V-PDFN-8, 1.7–2.0V, 8-pin SOP2 Wide, –40˚C to +85˚C, Note: Available in tray, tube, or tape and reel. 64Mb x1/x2/x4 Yes 108 MHz Multi I/O 2.7–3.6V 16-pin SOP2 Wide, –40˚C to +125˚C M25PX Serial NOR Flash Embedded 24-ball T-PBGA-24b05 8-pin V-PDFN-8, –40˚C to +85˚C, 8-pin SO8 Narrow, 128Mb x1/x2/x4 Yes 2.7–3.6V 108 MHz 16-pin SOP2, Multi I/O –40˚C to +105˚C, 8Mb x1/x2 Yes 2.3–3.6V 75 MHz 8-pin SO8 Wide, Dual I/O –40˚C to +85˚C 24-ball T-PBGA-24b05 –40˚C to +125˚C 8-pin V-PDFN (6x5) 8-pin V-PDFN-8, 8-pin SO8 Narrow, –40˚C to +85˚C, 256Mb x1/x2/x4 Yes 2.7–3.6V 108 MHz 16-pin SOP2, Multi I/O 8-pin SO8 Wide, –40˚C to +125˚C 16Mb x1/x2 Yes 2.3–3.6V 75 MHz Dual I/O –40˚C to +85˚C 24-ball T-PBGA-24b05 8-pin V-PDFN (6x5), 24-ball T-PBGA, KGD 16-pin SOP2, –40˚C to +85˚C, 512Mb x1/x2/x4 Yes 2.7–3.6V 108 MHz Multi I/O 8-pin SO8 Wide, 16-pin SO16 Wide, 24-ball T-PBGA-24b05 –40˚C to +125˚C 32Mb* x1/x2 Yes 2.7–3.6V 75 MHz Dual I/O –40˚C to +85˚C 8-pin V-PDFN (6x5), 24-ball T-PBGA Note: Available in tape and reel. 8-pin V-PDFN (8x6), NOR 64Mb** x1/x2 Yes 2.7–3.6V 75 MHz Dual I/O –40˚C to +85˚C MT25T Serial NOR Flash Automotive (Twin QSPI, x8) 16-pin SO16 Wide Note: Available in tray, tube, or tape and reel. *N25Q032 suggested for new design. **N25Q064 suggested for new design. 256Mb x1/x2/x4/x8 Yes 2.7–3.6V 108 MHz 16-pin SOP2 Dual QSPI –40˚C to +105˚C 512Mb x1/x2/x4/x8 Yes 2.7–3.6V 108 MHz 16-pin SOP2 Dual QSPI –40˚C to +105˚C M45PE Serial NOR Flash Embedded

Note: Available in tube or tape and reel. Available in 1S#/1CLK or 2S#/2CLK configuration, with or without HW RESET#. 1Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Narrow Page Erase –40˚C to +85˚C 2Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Narrow Page Erase –40˚C to +85˚C

Density Bus Width RoHS Voltage Speed Package Type Temp Range 8-pin SO8 Narrow, 4Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Wide, Page Erase –40˚C to +85˚C M25P Serial NOR Flash Embedded 8-pin V-PDFN (6x5) 8-pin SO8 Narrow, 512K x1 Yes 2.3–3.6V 50 MHz 8-pin SO8 Narrow Data Storage –40˚C to +85˚C 8Mb x1 Yes 2.7–3.6V 75 MHz 8-pin SO8 Wide, Page Erase –40˚C to +85˚C 8-pin U-PDFN (2x3), 8-pin SO8 Narrow, 8-pin V-PDFN (6x5) 1Mb x1 Yes 2.3–3.6V 50 MHz Data Storage –40˚C to +85˚C 8-pin V-PDFN (6x5), KGD 8-pin V-PDFN (6x5), 16Mb x1 Yes 2.7–3.6V 75 MHz Page Erase –40˚C to +85˚C 8-pin V-PDFN (6x5), 8-pin SO8 Narrow, 8-pin SO8 Wide 2Mb x1 Yes 2.3–3.6V 75 MHz Data Storage –40˚C to +85˚C KGD Note: Available in tray, tube, or tape and reel. 8-pin SO8 Narrow, 8-pin SO8 Wide, our memory. 4Mb x1 Yes 2.3–3.6V 75 MHz Data Storage –40˚C to +85˚C N25Q Serial NOR Flash Embedded 8-pin U-PDFN (2x3), 8-pin V-PDFN (6x5) 8-pin SO8 Narrow, 8-pin SO8 Wide, 8-pin XF-SCSP (2x2.8), 8Mb x1 Yes 2.7–3.6V 75 MHz Data Storage –40˚C to +85˚C 16Mb x1/x2/x4 Yes 1.7–2.0V 108 MHz Multi I/O –40˚C to +85˚C 8-pin U-PDFN (4x3), 8-pin V-PDFN (6x5) 8-pin SO8 Narrow 8-pin SO8 Wide, 8-pin SO8 Narrow, 16-pin SO16 Wide, 8-pin SO8 Narrow, 1.7–2.0V, 8-pin SO8 Wide, 8-pin U-PDFN (4x3), 32Mb x1/x2/x4 Yes 108 MHz 8-pin SO16 Wide, 8-pin U-PDFN (4x3), Multi I/O –40˚C to +85˚C 16Mb x1 Yes 2.7–3.6V 75 MHz Data Storage –40˚C to +85˚C 2.7–3.6V 8-pin V-PDFN (6x5), 8-pin V-PDFN (6x5), KGD 8-pin V-PDFN (8x6), KGD 1.7–2.0V, 8-pin SO8 Wide, 8-pin V-PDFN (6x5, 8x6), 64Mb x1/x2/x4 Yes 108 MHz Multi I/O –40˚C to +85˚C 16-pin SO16 Wide, 8-pin SO8 Wide, 2.7–3.6V 16-pin SO16 Wide, 24-ball T-PBGA, KGD 32Mb* x1 Yes 2.7–3.6V 75 MHz 8-pin V-PDFN (6x5), Data Storage –40˚C to +85˚C 16-pin SO16 Wide, 24-ball T-PBGA, 1.7–2.0V, your innovation. your innovation. 8-pin V-PDFN (8x6) 128Mb x1/x2/x4 Yes 108 MHz 8-pin V-PDFN (6x5, 8x6), Multi I/O –40˚C to +85˚C 2.7–3.6V Note: Available in tray, tube, or tape and reel. *N25Q032 suggested for new design. 8-pin SO8 Wide, KGD

24 (M25P Serial NOR Flash Embedded continued on next page) (N25Q Serial NOR Flash Embedded continued on next page) 25 Density Bus Width RoHS Voltage Speed Package Type Temp Range Solid State N25Q Serial NOR Flash Embedded (continued)

8-pin V-PDFN (8x6), Drives (SSDs) 1.7–2.0V, 256Mb x1/x2/x4 Yes 108 MHz 16-pin SO16 Wide, Multi I/O –40˚C to +85˚C 2.7–3.6V 24-ball T-PBGA 8-pin V-PDFN (8x6), 1.7–2.0V, 512Mb* x1/x2/x4 Yes 108 MHz 16-pin SO16 Wide, Multi I/O –40˚C to +85˚C Read Write 2.7–3.6V Capacity Form Factor Height MT/s Voltage Interface Operating Temp 24-ball T-PBGA Performance Performance 1.7–2.0V, 16-pin SO16 Wide, 1Gb** x1/x2/x4 Yes 108 MHz Multi I/O –40˚C to +85˚C M500 Self-Encrypting Drive Client SATA SSD 2.7–3.6V 24-ball T-PBGA Note: Available in tray, tube, or tape and reel. *MT25x512 suggested for new design. **MT25x01 suggested for new design. 120GB 2.5in 7mm 6.0 Gb/s 500 MB/s 130 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C MT25Q Serial NOR Flash Embedded 240GB 2.5in 7mm 6.0 Gb/s 500 MB/s 250 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 480GB 2.5in 7mm 6.0 Gb/s 500 MB/s 400 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 1.7–2.0V, SO16 Wide, 512Mb x1/x2/x4 Yes 133 MHz Multi I/O –40˚C to +85˚C 2.7–3.6V 24-ball TPBGA 960GB 2.5in 7mm 6.0 Gb/s 500 MB/s 400 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 1.7–2.0V, 120GB mSATA 3.75mm 6.0 Gb/s 500 MB/s 130 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 1Gb x1/x2/x4 Yes 133 MHz 24-ball TPBGA Multi I/O –40˚C to +85˚C 2.7–3.6V 240GB mSATA 3.75mm 6.0 Gb/s 500 MB/s 250 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 1.7–2.0V, 480GB mSATA 3.75mm 6.0 Gb/s 500 MB/s 400 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 2Gb x1/x2/x4 Yes 133 MHz 24-ball TPBGA Multi I/O –40˚C to +85˚C 2.7–3.6V 120GB M.2 3.5mm 6.0 Gb/s 500 MB/s 130 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C Note: Available in tray, tube, or tape and reel. 240GB M.2 3.5mm 6.0 Gb/s 500 MB/s 250 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 480GB M.2 3.5mm 6.0 Gb/s 500 MB/s 400 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C M550 Self-Encrypting Drive Client SATA SSD*

64GB 2.5in 7mm 6.0 Gb/s 550 MB/s 190 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 128GB 2.5in 7mm 6.0 Gb/s 550 MB/s 350 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 256GB 2.5in 7mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C NOR 512GB 2.5in 7mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 1024GB 2.5in 7mm 6.0 Gb/s 550MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 64GB 2.5in 5mm 6.0 Gb/s 550 MB/s 190 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 128GB 2.5in 5mm 6.0 Gb/s 550 MB/s 350 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 256GB 2.5in 5mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 512GB 2.5in 5mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 1024GB 2.5in 5mm 6.0 Gb/s 550MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 64GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 190 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C

128GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 350 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C SSDs 256GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 512GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 64GB M.2 3.5mm 6.0 Gb/s 550 MB/s 190 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 128GB M.2 3.5mm 6.0 Gb/s 550 MB/s 350 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 256GB M.2 3.5mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C our memory. 512GB M.2 3.5mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C Note: *Available in self-encrypting drive (SED) and non-SED versions. your innovation. your innovation.

26 27 Read Write Form Random Random Sequential Sequential Operating Capacity Form Factor Height MT/s Voltage Interface Operating Temp Capacity Height Voltage Interface Performance Performance Factor Read Write Read Write Temp M510 Self-Encrypting Drive Client SATA SSD* M500 Enterprise SATA SSD

128GB 2.5in 7mm 6.0 Gb/s 520 MB/s 150 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 120GB 2.5in 7mm 54K IOP/s 2.1K IOPS 500 MB/s 130 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 256GB 2.5in 7mm 6.0 Gb/s 520 MB/s 300 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 240GB 2.5in 7mm 60K IOP/s 3K IOPS 500 MB/s 250 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 128GB 2.5in 5mm 6.0 Gb/s 520 MB/s 150 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 480GB 2.5in 7mm 63K IOP/s 3.7K IOPS 500 MB/s 400 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 256GB 2.5in 5mm 6.0 Gb/s 520 MB/s 300 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 960GB 2.5in 7mm 64K IOP/s 3.8K IOPS 500 MB/s 400 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 128GB mSATA 3.75mm 6.0 Gb/s 520 MB/s 150 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 120GB mSATA 3.75mm 54K IOP/s 2.1K IOPS 500 MB/s 130 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 256GB mSATA 3.75mm 6.0 Gb/s 520 MB/s 300 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 240GB mSATA 3.75mm 60K IOP/s 3K IOPS 500 MB/s 250 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 128GB M.2 3.5mm 6.0 Gb/s 520 MB/s 150 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 480GB mSATA 3.75mm 63K IOP/s 3.7K IOPS 500 MB/s 400 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 256GB M.2 3.5mm 6.0 Gb/s 520 MB/s 300 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 120GB M.2 3.5mm 54K IOP/s 2.1K IOPS 500 MB/s 130 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C Note: *Available in self-encrypting drive (SED) and non-SED versions. 240GB M.2 3.5mm 60K IOP/s 3K IOPS 500 MB/s 250 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C M550 Client SATA SSD 480GB M.2 3.5mm 63K IOP/s 3.7K IOPS 500 MB/s 400 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C Note: M500 enterprise specifications listed here show the results of running enterprise test suites on a Micron M500 drive. We present them due to the interest in the M500 from 64GB 2.5in 7mm 6.0 Gb/s 550 MB/s 190 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C enterprise customers. This is the same product as Micron’s M500 client drive and can be ordered using the same part numbers. 128GB 2.5in 7mm 6.0 Gb/s 550 MB/s 350 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C M500DC Enterprise SATA SSD 256GB 2.5in 7mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 120GB 1.8in 5mm 63K IOP/s 23K IOPS 425 MB/s 200 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 512GB 2.5in 7mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 240GB 1.8in 5mm 63K IOP/s 33K IOPS 425 MB/s 330 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 1024GB 2.5in 7mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 480GB 1.8in 5mm 63K IOP/s 35K IOPS 425 MB/s 375 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 64GB 2.5in 5mm 6.0 Gb/s 550 MB/s 190 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 800GB 1.8in 5mm 65K IOP/s 24K IOPS 425 MB/s 375 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 128GB 2.5in 5mm 6.0 Gb/s 550 MB/s 350 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 120GB 2.5in 7mm 63K IOP/s 23K IOPS 425 MB/s 200 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 256GB 2.5in 5mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 240GB 2.5in 7mm 63K IOP/s 33K IOPS 425 MB/s 330 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 512GB 2.5in 5mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 480GB 2.5in 7mm 63K IOP/s 35K IOPS 425 MB/s 375 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 1024GB 2.5in 5mm 6.0 Gb/s 550 MB/s 500 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 800GB 2.5in 7mm 65K IOP/s 24K IOPS 425 MB/s 375 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 64GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 190 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 128GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 350 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C P320h Enterprise PCIe SSD 256GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C up to up to up to up to 175GB 2.5in 15mm 12V x4 PCIe Gen2 0˚C to +85˚C 512GB mSATA 3.75mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 415K IOPS 145K IOPS 1.75 GB/s 1.1 GB/s up to up to up to up to 64GB M.2 3.5mm 6.0 Gb/s 550 MB/s 190 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 350GB 2.5in 15mm 12V x4 PCIe Gen2 0˚C to +85˚C 415K IOPS 145K IOPS 1.75 GB/s 1.1 GB/s 128GB M.2 3.5mm 6.0 Gb/s 550 MB/s 350 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C up to up to up to up to 350GB HHHL 14.47mm 12V x8 PCIe Gen2 0˚C to +85˚C 256GB M.2 3.5mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 785K IOPS 205K IOPS 3.2 GB/s 1.9 GB/s 512GB M.2 3.5mm 6.0 Gb/s 550 MB/s 500 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C up to up to up to up to 700GB HHHL 14.47mm 12V x8 PCIe Gen2 0˚C to +85˚C 785K IOPS 205K IOPS 3.2 GB/s 1.9 GB/s M510 Client SATA SSD SSDs 128GB 2.5in 7mm 6.0 Gb/s 520 MB/s 150 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C P420m Enterprise PCIe SSD 256GB 2.5in 7mm 6.0 Gb/s 520 MB/s 300 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C up to up to up to up to 350GB 2.5in 15mm 12V x4 PCIe Gen2 0˚C to +85˚C 128GB 2.5in 5mm 6.0 Gb/s 520 MB/s 150 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 400K IOPS 51K IOPS 1.7 GB/s 500 MB/s up to up to up to up to 256GB 2.5in 5mm 6.0 Gb/s 520 MB/s 300 MB/s 5V SATA 6.0 Gb/s 0˚C to +70˚C 700GB 2.5in 15mm 12V x4 PCIe Gen2 0˚C to +85˚C 400K IOPS 51K IOPS 1.7 GB/s 500 MB/s 128GB mSATA 3.75mm 6.0 Gb/s 520 MB/s 150 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C

our memory. up to up to up to up to 700GB HHHL 14.71mm 12V x8 PCIe Gen2 0˚C to +85˚C 256GB mSATA 3.75mm 6.0 Gb/s 520 MB/s 300 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 750K IOPS 95K IOPS 3.3 GB/s 630 MB/s 128GB M.2 3.5mm 6.0 Gb/s 520 MB/s 150 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C up to up to up to up to 1.4TB HHHL 14.71mm 12V x8 PCIe Gen2 0˚C to +85˚C 256GB M.2 3.5mm 6.0 Gb/s 520 MB/s 300 MB/s 3.3V SATA 6.0 Gb/s 0˚C to +70˚C 750K IOPS 95K IOPS 3.3 GB/s 630 MB/s your innovation. your innovation.

28 29 Multichip Part Numbering Packages Guides

NAND LPDDR Secondary MCPs Bus Width Voltage Clock Rate Package Temp Range DDR4, DDR3, DDR2, DDR, SDRAM, Mobile LPDDR2/LPDDR/LPSDR, Density Density Bus Width and RLDRAM® Memory MT29C NAND Flash + LPDDR MCPs 1Gb x8, x16 512Mb x16, x32 1.7–1.9V 200 MHz 130-ball, 8.0 x 9.0 x 1.0mm –40˚C to +85˚C MT 48 A 128M16 D1 KL - 25 IT ES :A 130-ball, 8.0 x 9.0 x 1.0mm, 2Gb x8, x16 1Gb x16, x32 1.7–1.9V 200 MHz –40˚C to +85˚C 137-ball, 10.5 x 13.0 x 1.1mm Micron Technology Die Revision Designator

130-ball, 8.0 x 9.0 x 1.0mm, Part Numbering 4Gb x8, x16 2Gb x32 1.7–1.9V 208 MHz –40˚C to +85˚C 137-ball, 10.5 x 13.0 x 1.1mm Product Family Special Processing 40 = DDR4 SDRAM 47 = DDR2 SDRAM Blank = Production 4Gb x16 4Gb x32 1.7–1.9V 208 MHz 168-ball, 12 x 12 x 1mm –40˚C to +85˚C 41 = DDR3 SDRAM 48 = SDRAM/ ES = Engineering Sample Guides 137-ball, 10.5 x 13.0 x 1.1mm, 42 = Mobile LPDDR2 Mobile LPSDR MS = Mechanical Sample 8Gb x16 4Gb x32 1.7–1.9V 208 MHz –40˚C to +85˚C ® 137-ball, 12 x 12 x 1mm 44 = RLDRAM 3 Memory 49 = RLDRAM 1 & 2 46 = DDR SDRAM/ Memory Operating Temperatures Note: Products meet RoHS standards. Mobile LPDDR 52 = Mobile LPDDR3 Blank = Commercial Temperature IT1 = Industrial Temperature Process Technology AT = Automotive Temperature NAND LPDDR2 Secondary Bus Width Voltage Clock Rate Package Temp Range A = 1.2V VDD CMOS K = 1.35V VDD CMOS WT = Wireless Temperature Density Density Bus Width 1The number one (1) and the capital letter “I” C = 5.0V VCC CMOS L = 1.2V VDD CMOS utilize the same laser mark—“I” MT29R NAND Flash + LPDDR2 MCPs G = 3.0V VDD CMOS LC = 3.3V VDD CMOS H = 1.8V VDD CMOS N = 1.0V VDD CMOS Special Options –25˚C to +85˚C, HC = 1.8V VDD CMOS, 1.2V I/O R = 1.55V VDD CMOS (Multiple processing codes are separated by a 1Gb x16 512Mb x16 1.7–1.9V 400 MHz 121-ball, 7.5 x 8.0 x 0.8mm –40˚C to +85˚C J = 1.5V VDD CMOS V = 2.5V VDD CMOS space and are listed in hierarchical order.) 2Gb x8 1Gb x32 1.7–1.9V 400 MHz 162-ball, 8.0 x 10.5 x 0.8mm –25˚C to +85˚C Device Number (depth, width) A = Automotive M = Reduced Standby L = Low Power X = Product Longevity Blank = Bits M = Megabits 2Gb x8 1Gb x32 1.7–1.9V 533 MHz 162-ball, 8.0 x 10.5 x 0.8mm –40˚C to +85˚C G = Graphics Program (PLP) K = Kilobits G = Gigabits 4Gb x8 2Gb x32 1.7–1.9V 533 MHz 162-ball, 11.5 x 13.0 x 0.9mm –25˚C to +85˚C Access/Cycle Time 4Gb x8 2Gb x32 1.7–1.9V 533 MHz 162-ball, 8.0 x 10.5 x 0.8mm –40˚C to +85˚C Device Versions Note: Products meet RoHS standards. Alphanumeric character(s) specified by individual data sheet. DRAM Speed Grade tRAC Access L2, S2, and S4 devices are made with dual die in package. Technology Mark Time Mobile devices All DRAM -0 Untested NOR NOR PSRAM LPDDR Sync C1 = Single die, 2n prefetch -A Untested Bus Width Voltage Package Temp Range Density Family Density Density Clock Rate C2 = 2-die stack, 2n prefetch D1 = Single die, 4n prefetch Speed Grade MAX Clock PC Targets MT38 NOR Flash-Based MCPs D2 = 2-die stack, 4n prefetch Mark Frequency CL-tRCD-tRP D4 = 4-die stack, 4n prefetch DDR4 SDRAM 32Mb WR 16Mb NA x16 1.7–1.95V 66 MHz 52-ball TFBGA, 6 x 4mm –40˚C to +85˚C LA = 2-die stack, reduced-page-size addressing LF = Single die, standard addressing -107E 933 MHz 13-13-13 64Mb WR 16Mb NA x16 1.7–1.95V 66 MHz (AD-MUX); –40˚C to +85˚C -107H 933 MHz 14-13-13 LG = Single die, reduced-page-size addressing 64Mb WR 32Mb NA x16 1.7–1.95V 66 MHz 88-ball TFBGA, 8 x 10mm –40˚C to +85˚C -093E 1067 MHz 15-15-15 L2 = 2-die stack, standard addressing -093H 1067 MHz 16-15-15 128Mb LR 32Mb NA x16 1.7–1.95V 80 MHz 88-ball TFBGA, 8 x 10mm –40˚C to +85˚C L4 = 4-die stack, standard addressing -083E 1200 MHz 16-16-16 R4 = 4-die stack, reduced-page-size addressing DDR3 SDRAM our memory. 56-ball TFBGA, 8 x 6mm 128Mb LR 64Mb NA x16 1.7–1.95V 80 MHz –40˚C to +85˚C (AD-MUX) RLDRAM only -25 400 MHz 6-6-6 Blank = Common I/O -25E 400 MHz 5-5-5 256Mb LR 64Mb NA x16 1.7–1.95V 80 MHz 88-ball TFBGA, 8 x 10mm –40˚C to +85˚C C = Separate I/O -187 533 MHz 8-8-8 56-ball TFBGA, 8 x 8mm -187E 533 MHz 7-7-7 256Mb M18 128Mb NA x16 1.7–1.95V 133 MHz –40˚C to +85˚C (AD-MUX) Package Codes -15 667 MHz 10-10-10 -15E 667 MHz 9-9-9 256Mb LR NA 512Mb x16/ x16 1.7–1.95V 80 MHz 133-ball TFBGA, 8 x 8mm –40˚C to +85˚C Lead -15F 667 MHz 8-8-8 Pb-Free/RoHS- Package Description2, 3 Plating Compliant Plating -125 800 MHz 11-11-11 256Mb M18 NA 512Mb x16/ x16 1.7–1.95V 133 MHz 133-ball TFBGA, 8 x 8mm –40˚C to +85˚C -125E 800 MHz 10-10-10 DDR4 SDRAM -107 933 MHz 13-13-13 512Mb M18 NA 512Mb x16/ x16 1.7–1.95V 133 MHz 133-ball TFBGA, 8 x 8mm –40˚C to +85˚C – HA FBGA (96-ball, 9 x 14) -093 1067 MHz 14-14-14 56-ball TFBGA, 8 x 8mm – HX FBGA (78-ball, 9 x 11.5) your innovation. your innovation. 512Mb M18 128Mb NA x16 1.7–1.95V 133 MHz –40˚C to +85˚C Access/cycle time continued on next page. (AD-MUX) – TRF FBGA (Twindie®, 78-ball, 9 x 11.5) Note: Products meet RoHS standards. Package codes and descriptions continued on next page. 30 31 DRAM Component Part Numbering (Continued) GDDR5 Part Numbering

Package Codes Access/Cycle Time E D W 40 32 B A BG - 70 - F Pb-Free/ Pb-Free/ Speed Lead 2, 3 2, 3 MAX Clock PC Targets RoHS- Package Description RoHS- Package Description Grade Plating Frequency CL-tRCD-tRP Plating Plating Mark Micron Technology Environment Code DDR3 SDRAM Mobile LPDDR3 DDR2 SDRAM F = Lead free (RoHS compliant) and halogen free – DA FBGA (78-ball, 8 x 10.5) EL WFBGA (178-ball SDP, 11 x 11.5 x 0.8) -5E 200 MHz 3-3-3 Type – HA FBGA (96-ball, 9 x 14) EM VFBGA (178-ball DDP, 11 x 11.5 x 0.9) Speed -37E 267 MHz 4-4-4 D = Packaged device – HX FBGA (78-ball, 9 x 11.5) EN VFBGA (253-ball DDP, 11.5 x 11.5 x 0.9) 7A = 7 Gb/s – JP FBGA (78-ball, 8 x 11.5) ET TFBGA (178-ball QDP, 11 x 11.5 x 1.2) -3 333 MHz 5-5-5 – JT FBGA (96-ball, 8 x 14) -3E 333 MHz 4-4-4 70 = 7 Gb/s – RA FBGA (78-ball, 10.5 x 12) Mobile LPDDR2 -25 400 MHz 6-6-6 Product Family 6A = 6 Gb/s – RE FBGA (96-ball, 10.5 x 12) -25E 400 MHz 5-5-5 60 = 6 Gb/s AB PoP (121-ball SDP, 6.5 x 8 x 0.8) -187E 533 MHz 7-7-7 W = GDDR5 – RH FBGA (78-ball, 9 x 10.5) AC PoP (134-ball DDP ICE, 10 x 11.5 x .65) 50 = 5 Gb/s – SHM FBGA (QuadDie, 78-ball, 10.5 x 12) EU PoP (253-ball DDP, 11 x 11 x 0.9) DDR SDRAM – STA FBGA (QuadDie, 3DS, 78-ball, 10.5 x 12) EV PoP (253-ball DDP, 11 x 11 x 1.2) Package Code – SMA FBGA (QuadDie, 78-ball, 9.5 x 11.5) GU PoP (134-ball SDP, 10 x 11 x 0.7) -75 133 MHz 2.5-3-3 Density/Bank – SLD FBGA (TwinDie, 136-ball, 10 x 14) GV PoP (134-ball DDP, 10 x 11 x .85) -6T 167 MHz 2.5-3-3 BG = FBGA – THD FBGA (TwinDie, 78-ball, 9 x 11.5 x 1.2) 20 = 2Gb/16 bank Part Numbering KH PoP (216-ball DDP, 12 x 12 x 0.8) -6 167 MHz 2.5-3-3 40 = 4Gb/16 bank – THE FBGA (TwinDie, 78-ball, 10.5 x 12) KJ PoP (216-ball QDP, 12 x 12 x 1) -5B 200 MHz 3-3-3 Die Revision – THG FBGA (TwinDie, 3DS, 78-ball, 10.5 x 12) KL PoP (168-ball SDP & DDP, 12 x 12 x 0.8)

– THV FBGA (TwinDie, 78-ball, 8 x 11.5) Guides KP PoP (168-ball QDP, 12 x 12 x 1) SDRAM Power Supply – THA FBGA (QuadDie, 78-ball, 10 x 11.5) KQ PoP (168-ball JD32, 12 x 12 x 0.75) Organization – TNA FBGA (TwinDie, 96-ball, 10x14, x8 + x8) -75 133 MHz 3-3-3 KU PoP (216-ball 3DP, 12 x 12 x 0.9) 32 = x32 B = 1.5V, VDD – THW FBGA (QuadDie, 78-ball, 8 x 11.5) KV PoP (216-ball SDP, 12 x 12 x 0.65) -7E 133 MHz 2-2-2 – TRF FBGA (TwinDie, 78-ball, 9.5 x 11.5) LC PoP (240-ball QDP, 14 x 14 x 1) -7 143 MHz 3-3-3 -6 167 MHz 3-3-3 DDR2 SDRAM LD PoP (220-ball QDP, 14 x 14 x 1) LE PoP (168-ball 3DP, 12 x 12 x 1, 0.35mm ball) -6A 167 MHz 3-3-3 FP BP FBGA (60-ball, 8 x 12) LF PoP (168-ball SDP , 12 x 12 x 0.75) -55 183 MHz 3-3-3 FG BG FBGA (84-ball, 8 x 14) LG PoP (168-ball DDP, 12 x 12 x 0.8) -5 200 MHz 3-3-3 JN CF FBGA (60-ball, 8 x 10) LH PoP (216-ball SDP, 12 x 12 x 0.65) HW HR FBGA (84-ball, 8 x 12.5) LK PoP (216-ball DDP, 12 x 12 x 0.8) Mobile LPDDR3 F6 B6 FBGA (60-ball, 10 x 10) LL PoP (216-ball DDP, 12 x 12 x 0.8) -15 667 MHz 10-10-10 FN BN FBGA (84-ball, 10 x 12.5) LM PoP (216-ball QDP, 12 x 12 x 1) -125 800 MHz 12-12-12 HV HQ FBGA (60-ball, 8 x 11.5) MA PoP (168-ball SDP, 12 x 12 x 0.7) Hybrid Memory Cube Part Numbering HW HR FBGA (84-ball, 8 x 12.5) MC PoP (240-ball DDP, 14 x 14 x 0.8) Mobile LPDDR2 PK RT FBGA (84-ball, 9 x 12.5) MG PoP (134-ball QPD, 11.5 x 11.5 x 1.2) – HG FBGA (60-ball, 84-ball, 11.5 x 14) MH PoP (134-ball QPD, 11 x 11.5 x 1) -18 533 MHz – EB FBGA (60-ball, 9 x 11.5) MP PoP (220-ball DDP, 14 x 14 x 0.8) -25 400 MHz MT 43 A 04G 04 01 00 NGF - S15 ES :A – WTR FBGA (TwinDie, 63-ball, 9 x 11.5) -3 333 MHz – THM FBGA (TwinDie, 63-ball, 12 x 14) Mobile LPDDR -37 266 MHz – THN FBGA (TwinDie, 63-ball, 9 x 11.5) BF VFBGA (60-ball SDP, 8 x 9 x 1) -5 200 MHz Micron Technology Die Revision Designator – THN FBGA (TwinDie, 63-ball, 8 x 10 B5 VFBGA (90-ball SDP, 8 x 13 x 1) Mobile LPDDR [1Gb, 50nm only]) B7 VFBGA (60-ball SDP, 10 x 10 x 1) – WTR FBGA (TwinDie, 63-ball, 9 x 11.5) Product Family Special Processing CK VFBGA (60-ball SDP, 10 x 11.5 x 1) -75 133 MHz 43 = HMC – THT FBGA (Quad die, 65-ball, 9 x 11.5) CM VFBGA (90-ball SDP, 10 x 13 x 1) -6 167 MHz Blank = Production DDR SDRAM CX VFBGA (90-ball SDP, 9 x 13 x 1) -54 185 MHz ES = Engineering Sample JV PoP (168-ball QDP, 12 x 12 x 1) -5 200 MHz DRAM Voltage MS = Mechanical Sample CV CY FBGA (84-ball, 60-ball, 8 x 12.5) KQ PoP (168-ball DDP, 12 x 12 x 0.75) -48 208 MHz FG BG FBGA (84-ball, 60-ball, 8 x 14) MA PoP (168-ball SDP, 12 x 12 x 0.7) A = 1.2V VDD CMOS FN BN FBGA (54-ball, 60-ball, Mobile LPSDR Operating Temperatures 84-ball, 10 x 12.5) Mobile LPSDR DRAM Die Density per Layer Blank = Standard Temperature TG P TSOP (Type II) -8 125 MHz B4 VFBGA (54-ball SDP, 8 x 8) -75 133 MHz G = Gigabits SDRAM B5 VFBGA (90-ball SDP, 8 x 13 x 1) -6 167 MHz Special Options BF VFBGA (60-ball SDP, 8 x 9 x 1) Blank = No Special Options FB BB FBGA (60-ball, 8 x 16) RLDRAM 1 and 2 Number of DRAM Die in Package FG BG VFBGA (54-ball); FBGA (84-ball, 60-ball, 8 x 14) -5 200 MHz Link Description F4 B4 VFBGA (54-ball, 8 x 8) -33 300 MHz Logic Design Designator 4 F5 B5 VFBGA (90-ball, 8 x 13) -25 400 MHz Electrical & Physical SerDes 5 TG P TSOP (Type II) -25E 400 MHz Sequential Number for Product Variations Link Specification I/O Interface xTG xP Stacked TSOP, -18 533 MHz

our memory. x = internal stacking code -515 15 Gb/s RLDRAM 3 -U10 10 Gb/s RLDRAM 1 and 2 Package Codes -125 800 MHz6 FM BM µBGA (144-ball, 11 x 18.5) 7 -125E 800 MHz Codes Package Description (mm) HU HT FBGA (144-ball, 11 x 18.5) -107 933 MHz7 8 RLDRAM 3 -107E 933 MHz NFA BBGA (896-ball, 4 DRAM high, 31 x 31 x 4) -093 1067 MHz7 NFH BBGA (896-ball, 8 DRAM high, 31 x 31 x 4) PA RB FBGA (168-, 169-ball, -093E 1067 MHz8 NGF BFBGA (666-ball, 4 DRAM high, 16 x 19.5 x 3.9) 13.5 x 13.5 x 1.2) SDP NGK BFBGA (666-ball, 8 DRAM high, 16 x 19.5 x 3.9) 4Available with tRC 20ns. PKM RCT FBGA (168-, 169-ball, t 13.5 x 13.5 x 1.45) DDP 5Available with RC 15ns. 6Available with tRC (MIN) 12ns. 2 Due to space limitations, FBGA- and µBGA-packaged components and flip chips in packages have an abbreviated part 7Available with tRC (MIN) 10ns. mark that is different from the part number. See our Web site for more information on abbreviated component marks. t 8Available with RC (MIN) 8ns. your innovation. your innovation. 3Dimensions in millimeters. Note: Some device offerings are available in a VFBGA rather than an FBGA package; this is noted on the data sheet. 32 33 NOR MCP Part Numbering MCP NAND/NOR + LPDDR1 Part Numbering

MT 38W 203 3 A 9 0 2 ZQx* Z W XQ5 - ES MT 29C 1G 12M A A C A KC - xx IT ES

Micron Technology Production Status Micron Technology Production Status Blank = Production Blank = Production Product Family ES = Engineering Sample Product Family ES = Engineering Sample 38L = NOR L-Series + xNAND + xDRAM MS = Mechanical Sample 27C = OneNAND + LPDRAM MCP/PoP DC = Daisy Chain 38M = NOR M-Series + xNAND + xDRAM 28C = NOR + LPDRAM MCP/PoP QS = Qualification Sample 38W = NOR W-Series + xNAND + xDRAM Die Revision Code 29C = NAND + LPDRAM MCP/PoP MS = Mechanical Sample Contact factory Density NAND Density Operating Temperature Range 1G = 1Gb AG = 16Gb DM = 128Mb IT = Industrial Temp (–40˚C to +85˚C) Mark NOR xNAND xDRAM Operating Temperature Range 2G = 2Gb BG = 32Gb EM = 256Mb W = Wireless (–25˚C to +85˚C) 0 – N/A – I = Industrial (–40˚C to +85˚C) 4G = 4Gb CG = 64Gb FM = 512Mb W = Wireless (–25˚C to +85˚C) 1 32Mb = 4MB 16Mb = 2MB 8G = 8Gb DG = 128Gb Special Options Part Numbering 2 64Mb = 8MB 32Mb = 4MB Blank = Standard 3 128Mb = 16MB 64Mb = 8MB Special Options LPDRAM Density E = On-die ECC enabled

4 256Mb = 32MB 128Mb = 16MB Guides 5 512Mb = 64MB 256Mb = 32MB Contact factory 24M = 1Gb 56M = 256Mb 6 768Mb = 96MB 384Mb = 48MB 48M = 2Gb 12M = 512Mb LPDRAM Access Time 7 1Gb = 128MB 512Mb = 64MB 72M = 3Gb 40M = 640Mb Package Code -5 = 200 MHz CL3 -8 = 125 MHz 8 1.25Gb = 160MB 768Mb = 96MB 96M = 4Gb 52M = 1,152Mb -54 = 185 MHz CL3 -10 = 100 MHz 9 1.5Gb = 192MB 1Gb = 128MB ZA = 44-ball VBGA (7.5 x 5 x 1), F10x4+4, 0.5 92M = 8Gb -6 = 166 MHz CL3 -48 = 208 MHz A 1.75Gb = 224MB 1.5Gb = 192MB 19Z = 64-ball VBGA (7.7 x 9 x 1), F10x6+4, P.5, B.3 B 2Gb = 256MB 2Gb = 256MB -75 = 135 MHz CL3 C 3Gb = 384MB 3Gb = 384MB ZQ = 88-ball TFBGA (8 x 10 x 1.2), F8x10+8, 0.8 Operating Voltage Range D 4Gb = 512MB 4Gb = 512MB ZS = 56-ball VFBGA (8 x 6 x 1), 10x6-8+4, .5, B.3 A = 1.70–1.95V D = 1.2–1.5V Package Code B = 1.65–1.9V F = 1.0–1.2V 3RZ = 133-ball VFBGA (8 x 8 x 1), 3R14x14+1, 0.5 Type Package Package Description *x = a null character used as a placeholder C = 1.5–1.7V G = 1.7–1.95V DRAM; 2.7–3.6V NOR VCC; Voltage Range (Core I/O) 1.65–3.6V VCCQ JA MCP 137-ball TFBGA (10.5 x 13 x 1.2) JC MCP 107-ball TFBGA (10.5 x 13 x 1.2) Mark NOR xDRAM xDRAM Description NAND Flash Configuration JG PoP 168-ball VFBGA (12 x 12 x 0.9) 1 1.8V 1.8V 0 = N/A JI PoP 168-ball TFBGA (12 x 12 x 1.1) 2 3.0V 3.0V 1 = Async PSRAM Type Width Density Generation Type Width Density Generation JR MCP 137-ball LFBGA (10.5 x 13 x 1.4) 3 1.8–3.0V 1.8–3.0V 2 = Sync PSRAM, No MUX JS MCP 137-ball TFBGA (10.5 x 13 x 1.2) 4 3.0V 3.0V 3 = Sync PSRAM, A/D MUX A x8 – – AA x8 2Gb Third JV PoP 168-ball VFBGA (12 x 12 x 1.0) KC MCP 107-ball TFBGA (10.5 x 13 x 1.1) 4 = Sync PSRAM, AA/D MUX B x16 – – AB x16 2Gb Third C x8 1Gb First AC x8 1Gb Third KD MCP 137-ball TFBGA (10.5 x 13 x 1.1) Die Count 5 = x16 DDR, 1KB Page D x16 1Gb First AD x16 1Gb Third KN PoP 184-ball VFBGA (14 x 14 x 1.0) 6 = x16 DDR, 2KB Page E x8 – – AE x8 8Gb First KQ PoP 168-ball WFBGA (12 x 12 x 0.75) Mark NOR xDRAM 7 = x16 DDR, 4KB Page F 16 – – AF x16 8Gb First KS MCP 137-ball VFBGA (10.5 x 13 x 1.0) 8 = x32 DDR, 4KB Page G x8 – – AG x8 4Gb Fourth MA PoP 168-ball WFBGA (12 x 12 x 0.7) A 1 1 H x16 – – AH x16 4Gb Fourth MC PoP 240-ball WFBGA (14 x 14 x 0.8) B 1 2 J x8 2Gb Second AI x8 1Gb Fourth MD MCP 130-ball VFBGA (8 x 9 x 1.0) NAND Description K x16 2Gb Second AJ x16 1Gb Fourth ME PoP 240-ball TFBGA (14 x 14 x 1.12) 0 = N/A M x16 – – AK x16 – – MF PoP 168-ball VFBGA (12 x 12 x 0.85) NOR Configuration N x8 4Gb First AL x16 8Gb First MJ PoP 240-ball VFBGA (14 x 14 x 0.85) P x16 4Gb First AM x16 128Gb First MK MCP 153-ball VFBGA (10 x 12 x 0.9) Mark Boot MUX R x8 – – KH x16 – – ML MCP 153-ball VFBGA (8 x 9 x 0.9) T x16 – – MS PoP 191-ball WFBGA (12 x 12 x 0.8) 1 Uniform NO U x8 1Gb Second NE MCP 133-ball VFBGA (11 x 10 x 1.0) 2 Uniform AD V x16 1Gb Second RN MCP 160-ball FBGA (11.5 x 11.5 x 0.94) 3 Uniform A/D, AA/D** Y x8 4Gb Second TE MCP 153-ball VFBGA (10 x 12 x 1.0) 4 Uniform AA/D Z x16 4Gb Second PL MCP 162-ball WFBGA (11.5 x 13 x 0.8) 5 Bottom NO our memory. SK MCP 162-ball VFBGA (11.5 x 13 x 0.9) 6 Bottom A/D SP MCP 162-WFBGA (8 x 10.5 x 0.8) 7 Bottom A/D, AA/D** 8 Bottom AA/D LPDRAM Configuration 9 Top NO LPDRAM Configuration continued on next page. Chip Count A Top A/D B Top A/D, AA/D** Type CE#, CS# Chip Count C Top AA/D A 1, 1 1 Flash, 1 LPDRAM **AA/D interface configurable through register. B 1, 1 2 Flash, 1 LPDRAM C 1, 2 1 Flash, 2 LPDRAM D 1, 2 2 Flash, 2 LPDRAM E 1, 2 1 Flash, 3 LPDRAM

your innovation. your innovation. F 1, 2 2 Flash, 3 LPDRAM G 1, 2 1 Flash, 4 LPDRAM H 1, 3 1 Flash, 3 LPDRAM 34 35 MCP NAND/NOR + LPDDR1 Part Numbering (Continued) MCP e•MMC/NAND + LPDDR Part Numbering

MT 29RZ 4C 2D ZZ H G SK - 18 W x x .80E

LPDRAM Configuration Micron Technology Die Revision

Type Width Density Generation Product Family Production Status A DDR x16 512Mb First 29J = LPDDR + SLC e•MMC Blank = Production B SDR – – – 29K = LPDDR + MLC e•MMC ES = Engineering Sample C DDR x32 512Mb First 29M = LPDDR2-S4 + SLC e•MMC MS = Mechanical Sample D SDR – – – 29P = LPDDR2-S4 + MLC e•MMC J DDR x16 1Gb First 29R = LPDDR2-S4 + SLC NAND Special Options K SDR – – – 29T = LPDDR3-S4 + MLC e•MMC Blank = Standard L DDR x32 1Gb First M SDR – – – Z = A null character used as a placeholder. A = Customer variant N DDR x16 512Mb Second B = 2MB Boot area/2Mb RPMB E = On-die ECC enabled P SDR x16 512Mb Second NAND Density and Configuration Part Numbering R DDR x32 512Mb Second LPDRAM Density and Configuration T SDR x32 512Mb Second Operating Temperature Range V DDR x16 512Mb Third Guides Y DDR x32 512Mb Third Type Density Type Width IT = Industrial Temp (–40˚C to +85˚C) Z SDR x16 256Mb First W = Wireless (–25˚C to +85˚C) Z None Z None T 768Mb A x4 Type Width Density Generation U 640Mb B x8 LPDRAM Speed Grade V 512Mb C x16 -5 = 200 MHz CL3 (LPDDR 400) AA DDR x16 256Mb First W 256Mb D x32 -54 = 185 MHz CL3 (LPDDR 1) AB – – – – X 128Mb E x64 AC – – – – -6 = 166 MHz CL3 (LPDDR 333) Y 64Mb F x96 -75 = 133 MHz CL3 (LPDDR 266) AE SDR x16 512Mb Third 1 1Gb -125 = 800 MHz CL12 (LPDDR 1600) AF SDR x32 512Mb Third 2 2Gb AG SDR x16 + x16 512Mb + 128Mb First 3 3Gb -18 = 533 MHz CL8 (LPDDR 1066) AH DDR x16 1Gb Second 4 4Gb -25 = 400 MHz CL6 (LPDDR 800) AJ SDR x16 1Gb First 6 6Gb -3 = 333 MHz CL5 (LPDDR 667) AK DDR x32 1Gb Second 8 8Gb -37 = 266 MHz CL4 (LPDDR 533) AL SDR x32 1Gb First 9 9Gb AM DDR x16 2Gb First AN SDR x16 2Gb First Package Code AP DDR x32 2Gb First AR SDR x32 2Gb First e •MMC Density and Controller Type Package Description AS SDR x16 (2) + x16 1Gb + 128Mb First AT DDR x16 (2) + x32 2Gb + 1Gb First Type e•MMC Density Type Controller Version AH 221-ball (11.5 x 13 x 1.0) AU DDR x32 256Mb First AK 153-ball (11.5 x 13 x 1.1) AV SDR x32 256Mb First Z None Z None DI 169-ball (12 x 16 x 1.2) V 512MB K e•MMC version 4.2 AY DDR x32 (x2) 4Gb + 1Gb First/Second DM 153-ball (11.5 x 13 x 1.2) AZ DDR x16 2Gb Second W 256MB L e•MMC version 4.2/4.3 EQ 162-ball (11.5 x 13 x 1.3) BA DDR x32 2Gb Second X 128MB M e•MMC version 4.2/4.3 EW 162-ball (11.5 x 13 x 1.1) BB DDR – – – 1 1GB N e•MMC version 4.4 HS 199-ball (12 x 18 x 1.4) 2 2GB P e•MMC version 4.4 JD 199-ball (12 x 18 x 1.2) 4 4GB Q e•MMC version 4.4 KK 168-ball (12 x 12 x 0.9) 5 8GB R e•MMC version 4.41 MF 168-ball (12 x 12 x 0.85) 6 16GB S e•MMC version 4.41 MJ 240-ball (14 x 14 x 0.85) 7 32GB T e•MMC version 4.41 MM 162-ball (11 x 13.5 x 1.0) 8 64GB U e•MMC version 4.41 MW 162-ball (11.5 x 13 x 1.2) V e•MMC version 4.5 MX 152-ball (14 x 14 x 1.2) W e•MMC version 4.5 PL 162-ball (11.5 x 13 x 0.8) X e•MMC version 4.41 RD 162-ball (12 x 12 x 1.1) Y e•MMC version 5.0 RL 221-ball (11.5 x 13 x 0.9) our memory. SK 162-ball (11.5 x 13 x 0.9) SP 162-ball (8 x 10.5 x 0.8) Operating Voltage Range (Volts) TA 162-ball (11 x 13.5 x 1.1) Operating Voltage Range continued on next page. TF 162-ball (11.5 x 13 x 1.0) TN 121-ball (7.5 x 8 x 0.5)

Chip Count Chip Count continued on next page. your innovation. your innovation.

36 37 MCP e•MMC/NAND + LPDDR Part Numbering (Continued) e•MMC Memory Legacy Part Numbering

MT 29RZ 4C 2D ZZ H G SK - 18 W x x .80E MT FC xx x x xx - xx xx x x x

Operating Voltage Range (Volts) Chip Count Micron Technology Design Revision Blank = N/A NAND LPDRAM e•MMC Type Chip Count A = Design revision A Type Flash + Controller = FC VCC VDD VDDQ VCCM VCCQM A 1 NAND Flash (CEO), 1 LPDRAM, 1 e •MMC B 2 NAND Flash (CEO), 1 LPDRAM, 1 e •MMC Production Status A – 1.8 1.8 1.8 1.8 NAND Density C 1 NAND Flash (CEO), 2 LPDRAM (CSO#/CS1#), 1 e •MMC Blank = Production B 1.8 1.8 1.2 1.8 1.8 • 2G = 4GB 16G = 16GB D 2 NAND Flash (CEO), 2 LPDRAM (CSO#/CS1#), 1 e MMC ES = Engineering sample C 1.8 1.35 1.2 1.8 1.8 E 0 NAND Flash, 1 LPDRAM, 1 e •MMC 4G = 4GB 32G = 32GB MS = Mechanical sample D 1.8 1.2 1.2 1.8 1.8 F 0 NAND Flash, 2 LPDRAM (CSO#/CS1#), 1 e •MMC 8G = 8GB 64G = 64GB E 1.8 1.8 1.8 3.3 1.8/3.3 G 1 NAND Flash, 1 LPDRAM, 0 e •MMC F 1.8 1.8 1.8 1.8 1.8 H 1 NAND Flash, 2 LPDRAM, 0 e •MMC NAND Component Wafer Process Applied G – 1.8 1.8 3.3 1.8/3.3 I 2 NAND Flash, 2 LPDRAM, 0 e •MMC Blank = No polyimide H 1.8 1.2 1.2 – – J 0 NAND Flash, 0 LPDRAM, 2 e •MMC

Type NAND Device Part Numbering J – 1.2 1.2 1.8 1.8 K 0 NAND Flash, 4 LPDRAM, 1 e •MMC Z = Polyimide K – – – 3.3 1.8/3.3 L 0 NAND Flash, 3 LPDRAM, 1 e •MMC 0 No silicon in package L 1.8 1.8 1.2 1.8 – M 2 NAND Flash, 1 LPDRAM, 0 e •MMC J 25nm, 64Gb, x8, 3.3V Operating Temperature Range Guides M 1.8 1.8 1.2 1.8 – N 4 NAND Flash, 4 LPDRAM, 0 e •MMC L 25nm, 32Gb, x8, 3.3V N 1.8 1.8 1.2 1.8 – M 25nm, 16Gb, x8, 3.3V WT = Standard: –25˚C to +85˚C IT = Extended: –40˚C to +85˚C AIT = Industrial: –40˚C to +85˚C + HR-certified test flow Controller ID AITI = Industrial: –40˚C to +85˚C + HR-certified test flow

Type Controller ID Special Options 0 No silicon in package Blank = No special options C Version 4.51, embedded, 1st generation D Version 4.51, embedded, 2nd generation Type Details G Version 4.41, automotive, 2nd generation T Version 4.41, automotive, 2nd generation, custom 0M 1MB max boot area/100% max enhanced U Version 4.41, automotive, 1st generation 1M 2MB max boot area/100% max enhanced V Version 4.41, embedded, 1st generation 2M 4MB max boot area/100% max enhanced W Version 4.51, automotive, 1st generation 3M 8MB max boot area/100% max enhanced 4M 16MB max boot area/100% max enhanced 5M 32MB max boot area/100% max enhanced 6M 64MB max boot area/100% max enhanced L1 Custom R1 Custom

Package Codes

Type Package Description AM 153-ball VFBGA (11.5 x 13 x 1.0) DE 153-ball LFBGA (11.5 x 13 x 1.4) DM 153-ball TFBGA (11.5 x 13 x 1.2) DN 169-ball LFBGA (14 x 18 x 1.4) DQ 100-ball LBGA (14 x 18 x 1.4, 1.0 pitch) EA 153-ball WFBGA (11.5 x 13 x 0.8) EC 169-ball WFBGA (14 x 18 x 0.8) ED 169-ball VFBGA (14 x 18 x 1.0) EF 169-ball TFBGA (14 x 18 x 1.2) NA 100-ball TBGA (14 x 18 x 1.2) our memory. All packages are PB free. your innovation. your innovation.

38 39 e•MMC Memory Next-Generation Part Numbering DDR4 Module Part Numbering

MT FC xx x x xx - xx xx x MT 36 A SF 2G 72 P Z - 2G1 A 1

Micron Technology Production Status Micron Technology MB Vendor/Revision (LRDIMM only) Blank = Production Flash + Controller = FC ES = Engineering sample Number of Memory Components Printed Circuit Board MS = Mechanical sample Revision Designator NAND Density Process Technology 4G = 4GB 16G = 16GB 128G = 128GB Operating Temperature Range A = 1.2V Die Revision 8G = 8GB 32G = 32GB WT = Standard: –25˚C to +85˚C 64G = 64GB IT = Extended: –40˚C to +85˚C Product Family Module Speed AIT = Industrial: –40˚C to +85˚C + HR-certified test flow TF = FBGA without temp sensor NAND Component TS = DDP (dual die in package) without temp sensor Special Options TQ = QDP (quad die in package) without temp sensor

Type Device Part Numbering Blank = No special options SF = FBGA with temp sensor AA 20nm, Rev A, 64Gb, x8, 3.3V SS = DDP with temp sensor RP) AC 20nm, 32Gb, x8, 3.3V Type Details SQ = QDP with temp sensor t Guides

AG 20nm, 128Gb, x8, 3.3V RCD- 0M 1MB max boot area/100% max enhanced DF = VLP (very low profile) with temp sensor t AJ 20nm, 128Gb, x8, 3.3V DS = VLP DDP with temp sensor 1M 2MB max boot area/100% max enhanced Module Speed Grade Component Speed Grade/ Mark Part JEDEC Component Speed Grade (MHz) Clock Frequency Data Rate (MT/s) Module Bandwidth SPD Module Configuration (CL- AK 20nm, Rev D, 64Gb, x8, 3.3V 2M 4MB max boot area/100% max enhanced DQ = VLP QDP with temp sensor SZF = FBGA with temp sensor and heat spreader -1G9 -107E DDR4-1866 933 1866 PC4-1866 13-13-13 3M 8MB max boot area/100% max enhanced -1S9 -107H DDR4-1866 933 1866 PC4-1866 14-13-13 4M 16MB max boot area/100% max enhanced SZS = DDP with temp sensor and heat spreader Controller ID -2G1 -093E DDR4-2133 1067 2133 PC4-2133 15-15-15 5M 32MB max boot area/100% max enhanced SZQ = QDP with temp sensor and heat spreader -2S1 -093H DDR4-2133 1067 2133 PC4-2133 16-15-15 6M 64MB max boot area/100% max enhanced -2G4 -083E DDR4-2400 1200 2400 PC4-2400 16-16-16 Type Controller ID DZF = VLP with temp sensor and heat spreader L1 Custom DZS = VLP DDP with temp sensor and heat spreader R1 Custom SPD = serial presence-detect pin (module only) AA Version 4.51, embedded DZQ = VLP QDP with temp sensor and heat spreader CL = CAS latency; tRCD = active-to-command time; tRP = precharge time AE Version 5.0 Package Codes Device Number (depth, width) Package Codes Blank = Megabits Type Package Description G = Gigabits Pb-Free Package DE 153-ball LFBGA (11.5 x 13 x 1.4) Devices Descriptions DL 169-ball TFBGA (12 x 18 x 1.2) Module Version Z Commercial temp; halogen-free; single-, dual-, quad-, or octal-rank DM 153-ball TFBGA (11.5 x 13 x 1.2) A = 284-pin Unbuffered DIMM DIMM DN 169-ball LFBGA (14 x 18 x 1.4) H = 256-pin SODIMM DZ Commercial temp; halogen-free; select single-, dual-, quad-, or EF 169-ball TFBGA (14 x 18 x 1.2) L = 284-pin LRDIMM octal-rank DIMM EA 153-ball WFBGA (11.5 x 13 x 0.8) DZM Commercial temp; reduced standby; halogen-free; select single-, AM 153-ball VFBGA (11.5 x 13 x 1.0) LS = 284-pin 3DS LRDIMM dual-, quad-, or octal-rank DIMM NA 100-ball TBGA (14 x 18 x 1.2) P = 284-pin RDIMM IZ Industrial temp, halogen-free; single-, dual-, or quad-rank DIMM CN 153-ball VFBGA (11.5 x 13 x 1.0) PS = 284-pin 3DS RDIMM ZM Commercial temp; reduced standby; halogen-free; select single-, EY 153-ball LFBGA (11.5 x 13 x 1.4) dual-, quad-, or octal-rank DIMM NS 153-ball VFBGA (11.5 x 13 x 1.2)

All packages are PB free. our memory. your innovation. your innovation.

40 41 DDR3 Module Part Numbering DDR2 Module Part Numbering

MT 36 K SF 2G 72 P Z - 1G6 E 1 MT 36 H TF 1G 72 P Z - 80E C 1

Micron Technology MB Vendor/Revision (LRDIMM only) Micron Technology AMB Vendor Rev (FBDIMM only)

Number of Memory Components Printed Circuit Board Number of Memory Components AMB Vendor Revision Designator E = Intel (FBDIMM) Process Technology Process Technology D = IDT (FBDIMM) N = NEC (FBDIMM) J = 1.5V Die Revision H = 1.8V K = 1.35V G = 1.5V Printed Circuit Board M = 1.35V Reduced Standby Module Speed R = 1.55V Revision Designator Product Family Product Family Die Revision TF = FBGA TF = FBGA TS = DDP (dual die in package) TS = DDP (dual die in package) Module Speed Part Numbering SF = FBGA with temp sensor TZS = DDP with heat spreader RP) SS = DDP with temp sensor t VF = VLP (very low profile) Guides RCD- SQ = QDP with temp sensor t VS = VLP DDP

BF = VLP (very low profile) (17.9mm) with temp sensor Module Speed Grade Component Speed Grade/ Mark Part JEDEC Component Speed Grade (MHz) Clock Frequency Data Rate (MT/s) Module Bandwidth SPD Module Configuration (CL- VZS = VLP DDP with heat spreader BS = VLP (17.9mm) DDP with temp sensor -80B -25 DDR3-800 400 800 PC3-6400 6-6-6 RP) DF = VLP (18.75mm) with temp sensor -80C -25E DDR3-800 400 800 PC3-6400 5-5-5 Device Number (depth, width) t DS = VLP (18.75mm) DDP with temp sensor -1G0 -187 DDR3-1066 533 1066 PC3-8500 8-8-8 RCD-

Blank = Megabits t GF = 1.5U height with temp sensor -1G1 -187E DDR3-1066 533 1066 PC3-8500 7-7-7 G = Gigabits HF = 2U height with temp sensor -1G2 -187F DDR3-1066 533 1066 PC3-8500 6-6-6 Module Speed Grade Component Speed Grade/ Mark Part JEDEC Component Speed Grade (MHz) Clock Frequency Data Rate (MT/s) Module Bandwidth SPD Module Configuration (CL- LF = 4U height with temp sensor -1G3 -15 DDR3-1333 667 1333 PC3-10600 10-10-10 -40E -5E DDR2-400 200 400 PC2-3200 3-3-3 SZF = FBGA with temp sensor and heat spreader -1G4 -15E DDR3-1333 667 1333 PC3-10600 9-9-9 Module Version -53E -37E DDR2-533 267 533 PC2-4200 4-4-4 -1G5 -15F DDR3-1333 667 1333 PC3-10600 8-8-8 -667 -3 DDR2-667 333 667 PC2-5300 5-5-5 SZS = DDP with temp sensor and heat spreader 9 Blank = 240-pin Registered DIMM -1GA -125 DDR3-1333 667 1333 PC3-10600 11-11-11 -80E -25E DDR2-800 400 800 PC2-6400 5-5-5 SZQ = QDP with temp sensor and heat spreader -1G6 -125 DDR3-1600 800 1600 PC3-12800 11-11-11 A = 240-pin Unbuffered DIMM F = 240-pin FBDIMM -800 -25 DDR2-800 400 800 PC2-6400 6-6-6 BZF = VLP (17.9mm) with temp sensor and heat spreader -1G7 -125E DDR3-1600 800 1600 PC3-12800 10-10-10 -1GA -187E DDR2-1066 533 1066 PC2-8500 7-7-7 BZS = VLP (17.9mm) DDP with temp sensor and heat spreader -1G8 -125F DDR3-1600 800 1600 PC3-12800 9-9-9 H = 200-pin SODIMM -1G9 -107 DDR3-1866 933 1866 PC3-14900 13-13-13 P = Parity SPD = serial presence-detect pin (module only) DYS = VLP (18.75mm) with temp sensor and alternate heat spreader t t -1GB -107E DDR3-1866 933 1866 PC3-14900 12-12-12 CL = CAS latency; RCD = active-to-command time; RP = precharge time DZF = VLP (18.75mm) with temp sensor and heat spreader PK = 244-pin Parity Mini-RDIMM -1GC -107F DDR3-1866 933 1866 PC3-14900 11-11-11 RH = 200-pin SORDIMM DZS = VLP (18.75mm) DDP with temp sensor and heat spreader -2G1 -093 DDR3-2133 1067 2133 PC3-17000 14-14-14 DZQ = VLP (18.75mm) QDP with temp sensor and heat spreader -2G2 -093E DDR3-2133 1067 2133 PC3-17000 13-13-13 Package Codes -2G3 -093F DDR3-2133 1067 2133 PC3-17000 12-12-12 Pb-Free Package 9 Device Number (depth, width) -G1A = -1333 SPD with -125 tested DRAM Devices Descriptions SPD = serial presence-detect pin (module only) Blank = Megabits t t CL = CAS latency; RCD = active-to-command time; RP = precharge time Y Commercial temp; single- or dual-rank DIMM G = Gigabits Z Halogen-free; commercial temp; single- or Package Codes dual-rank DIMM Module Version DY Commercial temp; select dual-rank DIMM DZ Halogen-free; commercial temp; select dual- Blank = 240-pin Registered DIMM Pb-Free Package or quad-rank DIMM A = 240-pin Unbuffered DIMM Devices Descriptions IY Industrial temp; select dual-rank DIMM AK = 244-pin Unbuffered Mini-DIMM Y Commercial temp; single- or dual-rank DIMM TY Industrial temp; select dual-rank DIMM H = 204-pin SODIMM Z Halogen-free; commercial temp; single- or dual-rank DIMM IZ Halogen-free; industrial temp; select single- L = 240-pin LRDIMM IZ Industrial temp, halogen-free; commercial temp; and dual-rank DIMM single- or dual-rank DIMM TZ Halogen-free; industrial temp; select dual- LS = 240-pin 3DS LRDIMM and quad-rank DIMM P = 240-pin Parity RDIMM DY Commercial temp; select dual- or quad-rank DIMM DZ Halogen-free; commercial temp; select dual- or quad-rank DIMM PK = 244-pin Parity Mini-DIMM our memory. your innovation. your innovation.

42 43 DDR and SDRAM Module Part Numbering PSRAM CellularRAM® Memory Part Numbering

MT 36 V DDF 256 72 Y - 40B J 2 MT 45 W 1M W 16 P A FA - 70 1 WT ES

Micron Technology Printed Circuit Board Micron Technology Production Status Revision Designator Blank = Production Number of Memory Components Product Family ES = Engineering Sample Die Revision Designator 45 = PSRAM CellularRAM® Memory MS = Mechanical Sample Process Technology Operating Core Voltage L = 3.3V (SDRAM) Module Speed Operating Temperature Range V = 2.5V (DDR SDRAM) W = 1.70–1.95V WT = –30˚C to +85˚C V = 2.70–3.60V IT = –40˚C to +85˚C AT = –40˚C to +105˚C Product Family Address Locations DDF = FBGA (DDR SDRAM) M = Megabits Options

DDT = TSOP (DDR SDRAM) RP) t

Blank = Standard device Part Numbering DVF = FBGA VLP (DDR SDRAM) K = Kilobits RCD-

t L = Low power SDF = FBGA (SDRAM)

SDT = TSOP (SDRAM) Module Speed Grade Component Speed Grade/ Mark Part JEDEC Component Speed Grade (MHz) Clock Frequency Data Rate (MT/s) Module Bandwidth SPD Module Configuration (CL- I/O Voltage Frequency Guides -335 -6T DDR333 TSOP 167 333 PC2700 2.5-3-3 W = 1.75–3.60V 11 Blank = No burst mode Device Number (depth, width) -335 -6 DDR333 FBGA 167 333 PC2700 2.5-3-3 V = 2.70–3.60V -40B -5B DDR40012 200 400 PC3200 3-3-3 8 = 80 MHz Blank = Megabits Bus Configuration 1 = 104 MHz G = Gigabits SPD = serial presence-detect pin (module only) CL = CAS latency; tRCD = active-to-command time; tRP = precharge time 16 = x16 13 = 133 MHz 11Data valid window is 150ps greater than -6T. Module Version10 12DDR400 nominal voltage is 2.6V. Read/Write Mode Operation Access/Cycle Time Blank = 168-pin/184-pin/240-pin Registered DIMM P = Async/Page 55 = 55ns A = 168-pin/184-pin/240-pin Unbuffered DIMM Package Codes B = Async/Page/Burst 70 = 70ns H = 144-pin/200-pin SODIMM DB = AA/D MUX 85 = 85ns PH = 144-pin/200-pin Unbuffered SODIMM with PLLs Lead-Plated Pb-Free Package MB = MUX Burst U = 100-pin Unbuffered DIMM Devices Devices Descriptions MP = Asynchronous MUX Package Code 10 FA = 48-ball VFBGA (6 x 8 grid, 0.75mm pitch, 6 x 8 x 1mm) All SDRAM and DDR SDRAM DIMMs have serial-presence detect. G Y Commercial temp; single- or dual-rank DIMM DG DY Commercial temp; select dual-rank DIMM Die Rev Code FB = 54-ball VFBGA (6 x 9 grid, 0.75mm pitch, 6 x 8 x 1mm) BA = 48-ball VFBGA (Pb-free13; 6 x 8 grid, 0.75mm pitch, 6 x 8 x 1mm) I IY Industrial-temp DIMM Blank = P25A, P26Z, and P24Z Design SDRAM Modules BB = 54-ball VFBGA (Pb-free13; 6 x 9 grid, 0.75mm pitch, 6 x 8 x 1mm) T TY Industrial temp; select dual-rank DIMM A = P24A Design GX = 54-ball VFBGA (Green; 6 x 9 grid, 0.75mm pitch, 8 x 10 x 1mm) t t C = P25Z Design Module Allowable CL- RCD- RP GA = 48-ball VFBGA (Green; 6 x 8 grid, 0.75mm pitch, 6 x 8 x 1mm) Speed Component Speed D = P23Z Design GB = 54-ball VFBGA (Green; 6 x 9 grid, 0.75mm pitch, 6 x 8 x 1mm) -133 -6A, -75, -7E 3-3-3 E = P22Z Design 13 -13E -7E 2-2-2 Lead is not intentionally added by Micron during the manufacturing process, but it can be present in trace amounts in the raw materials used to manufacture the finished products. DDR SDRAM Modules

Module Allowable Speed Component Speed -335 -6, -6T, -5B -40B -5B our memory. your innovation. your innovation.

44 45 NAND Flash Part Numbering NAND Small Page Flash Memory Part Numbering

MT 29F 2G 08 A A A A A WP - xx xx x ES: A NAND 512 R 3 A 2 A ZA 6 E

Micron Technology Design Revision Density Packaging A = 1st Design Revision 128 = 128Mb E = ECOPACK package, standard tray packaging Product Family 256 = 256Mb F = ECOPACK package, tape and reel packaging 29F = NAND Flash Production Status 512 = 512Mb 29E = Enterprise NAND Flash Blank = Production Operating Voltage Range Operating Temperature Range ES = Engineering Sample 6 = – 40˚C to +85˚C R = 1.8V QS = Qualification Sample X = –40˚C to +85˚C; Product Longevity Density W = 3.0V 1G = 1Gb 64G = 64Gb MS = Mechanical Sample Program (PLP) 2G = 2Gb 128G = 128Gb Configuration Features Package Code 4G = 4Gb 256G = 256Gb 3 = x8 8G = 8Gb 512G = 512Gb E = Internal ECC enabled X = Product Longevity Program N = 48-pin TSOP 4 = x16 ZA/ZD = 55-, 63-ball VFBGA 16G = 16Gb 1Tb = 1024Gb (1Tb) M = Media (PLP) Part Numbering E0 = Bare die 32G = 32Gb 2Tb = 2048Gb (2Tb) R = MLC+ features Z = Polyimide (if applicable) NAND Product Family Identifier S = Security features DI = Known good die

A = 512B Page NAND SLC Guides Device Width Operating Temperature Range Product Version 01 = 1 bit Blank = Commercial (0˚C to +70˚C) Device Options A, B, C, D 08 = 8 bits IT = Extended (–40˚C to +85˚C) (AKA ET) 0 = No options (CE care; sequential raw read enabled) 16 = 16 bits WT = Wireless Temp (–25˚C to +85˚C) 2 = CE don’t care AAT = Automotive Grade (–40˚C to +105˚C) A = CE don’t care; automotive Level AIT = Automotive Grade (–40˚C to +85˚C)

Mark Level Speed Grade A SLC Blank = Async only 12 = 166 MT/s C MLC 6 = 333 MT/s 10 = 200 MT/s E TLC N25Q Serial NOR Flash Memory Part Numbering Package Code14 Classification WP = 48-pin TSOP I (CPL version) J1 = 132-ball VBGA (SDP, DDP), 12 x 18 x 1.0mm N25Q 128 A 1 3 E 12 4 0 G Mark Die nCE RnB I/O Channels J2 = 132-ball TBGA (QDP), 12 x 18 x 1.2mm J3 = 132-ball LBGA (8DP), 12 x 18 x 1.4mm B 1 1 1 1 J4 = 132-ball VBGA (SDP, DDP), 12 x 18 x 1.0mm D 2 1 1 1 J5 = 132-ball TBGA (QDP), 12 x 18 x 1.2mm SPI NOR Family Identifier Packaging E 2 2 2 2 J6 = 132-ball LBGA (8DP), 12 x 18 x 1.4mm N25Q = Multi I/O SPI NOR Flash E = Tray F 2 2 2 1 J7 = 152-ball LBGA (16DP), 14 x 18 x 1.5mm F = Tape and reel J 4 2 2 1 J9 = 132-ball LBGA (16DP), 12 x 18 x 1.5mm Density G = Tube K 4 2 2 2 G1 = 272-ball VFBGA (SDP, DDP, 3DP, QDP), 14 x 18 x 1.0mm L 4 4 4 4 G2 = 272-ball TFBGA (8DP), 14 x 18 x 1.3mm 008 = 8Mb 128 = 128Mb M 4 4 4 2 G6 = 272-ball LFBGA (16DP), 14 x 18 x 1.5mm 016 = 16Mb 256 = 256Mb Security Q 8 4 4 4 H1 = 100-ball VBGA (SDP, DDP), 12 x 18 x 1.0mm 032 = 32Mb 512 = 512Mb 0, 1, 2, 3, 4, 5, 6 T 16 8 4 2 H2 = 100-ball TBGA (QDP), 12 x 18 x 1.2mm 064 = 64Mb 00A = 1Gb Contact Micron Sales for more information U 8 4 4 2 H3 = 100-ball LBGA (8DP), 12 x 18 x 1.4mm V 16 8 4 4 H4 = 63-ball VFBGA (SDP, DDP), 9 x 11 x 1.0mm Litho H6 = 152-ball VBGA (SDP, DDP), 14 x 18 x 1.0mm Operating Temperature Range H7 = 152-ball TBGA (QDP), 14 x 18 x 1.2mm A = 65nm Operating Voltage Range H8 = 152-ball LBGA (8DP), 14 x 18 x 1.4mm 4 = Industrial-tested with standard test flow (–40˚C to +85˚C) A = 3.3V (2.70–3.60V) HC = 63-ball VFBGA (SDP, DDP), 10.5 x 13 x 1.0mm Feature Set A = Automotive: –40˚C to +125˚C + HR-certified test flow B = 1.8V (1.70–1.95V) 14Products are Pb-free and RoHS-compliant. Lead is not intentionally added 1 = Byte addressability, hold pin, Micron XiP H = Automotive: –40˚C to +85˚C + HR-certified test flow by Micron during the manufacturing process, but it can be present in trace C = 3.3V (2.70–3.60V), VCCQ 1.8V (1.70–1.95V) amounts in the raw materials used to manufacture the finished products. 2 = Byte addressability, hold pin, basic XiP our memory. D = 1.8V (1.65–3.6V) SIM 3 = Byte addressability, reset pin, Micron XiP Package Code E = 3.3V (2.70–3.6V), V 3.3V or 1.8V (1.70–1.95V) 4 = Byte addressability, reset pin, basic XiP CCQ Interface F3 = DFN/3 x 2 (MLP) A = Async only F4 = DFN/3 x 4 (MLP) B = Sync/Async Operating Voltage Range F6 = DFN/6 x 5 (MLP) D = SPI 1 = 1.7–2.0V VCC F7 = DFN/6 x 5 (MLP), sawn 3 = 2.7–3.6V VCC F8 = DFN/8 x 6 (MLP) Die Revision SC = SOP2-8/150 mil (SO8N) A = 1st set of device features Array Configuration SE = SOP2-8/208 mil (SO8W) B = 2nd set of device features (rev only if different from 1st set) T = Top SF = SOP2-16/300 mil (SO16W) C = 3rd set of device features (rev only if different) B = Bottom 12 = T-PBGA-24b05/6 x 8 (TBGA 24)

your innovation. your innovation. D = 4th set of device features (rev only if different) E = Uniform 51 = XF-SCSP (CSP) Etc. ... G = Easy transparent stack 46 47 M25/M45 Serial NOR Flash Memory Part Numbering M29W Parallel NOR Flash Memory Part Numbering

M25P 10 x V MN 6 T P x M29 W 320 E T 70 N 6 E

SPI NOR Family Identifier Test Flow NOR Family Identifier Packaging M25P = Data storage family Blank = Standard parts M29 = Standard Parallel NOR E = ECOPACK package, standard tray packaging 512K/1Mb – Uniform block erase 32KB A = Automotive: –40˚C to +85˚C + HR-certified test flow F = ECOPACK package, tape and reel packaging 2Mb to 64Mb – Uniform block erase 64KB (designated only for operating temp range 6) Operating Voltage Range 128Mb – Uniform block erase 256KB W = 2.7–3.6V V Operating Temperature Range RoHS CC M25PE = Page erase family 3 = –40˚C to +125˚C (automotive) Uniform block erase 256 byte + 4KB + 64KB P = RoHS-compliant Density 6 = –40˚C to +85˚C M45PE = Page erase family G = RoHS-compliant 400 = 4Mb 640 = 64Mb Uniform block erase 256 byte + 64KB 128 = 128Mb Package Code Packaging 800 = 8Mb M25PX = Dual I/O family 160 = 16Mb 256 = 256Mb N/NB = 56-pin TSOP, 14 x 20mm Uniform block erase 4KB + 64KB Blank = SO Tube (MLP and BGA tray) 320 = 32Mb N/NA = 48-pin TSOP, 12 x 20mm

T = Tape and reel ZA = 48-ball TBGA, 6 x 8mm, 0.8mm pitch (4Mb–64Mb) Part Numbering Density Silicon Version or Architecture Option 64-ball TBGA, 10 x 13mm, 1mm pitch (128Mb/256Mb) 05 = 512Kb 16 = 16Mb Operating Temperature Range ZS = 64-ball FBGA, 11 x 13mm, 1mm pitch

D, E, F, G Guides ZF = 64-ball TBGA, 10 x 13mm, 1mm pitch 10 = 1Mb 32 = 32Mb 6 = –40˚C to +85˚C 20 = 2Mb 64 = 64Mb ZE = 48-ball TFBGA, 6 x 8mm, 0.8mm pitch 3 = Automotive: –40˚C to +125˚C + HR-certified test flow Functionality/Security 40 = 4Mb 128 = 128Mb Speed 80 = 8Mb H = Uniform block (highest block protected) Package Code L = Uniform block (lowest block protected) 45 = 45ns 5A = 55ns (automotive, temp range 6) Security BA = PDIP8, 300 mils B = Bottom boot (bottom blocks protected) MB = DFN, 3 x 2 (MLP) T = Top boot (top blocks protected) 55 = 55ns Blank = No security MC = DFN, 3 x 4 (MLP) 6A = 60ns (automotive, temp range 6) S = UID preprogrammed ME = DFN, 8 x 6 (MLP) 60 = 60ns SO = UID + Permanent block lock MF = SOP2-16, 300 mils (SO16W) 7A = 70ns (automotive, temp range 6) ST = UID + Permanent block lock + reverse power-up block lock status MN = SOP2-8, 150 mils (SO8N) 70 = 70ns MP = DFN, 6 x 5, (MLP) Operating Voltage Range MS = DFN, 6 x 5, sawn (MLP) V = 2.7–3.6V VCC MW = SOP2-8, 208 mils (SO8W) 2.3–3.6V VCC (M25P available in 512Kb–4Mb; ZM = T-PBGA-24b05, 6 x 8 (TBGA 24) M25PX available in 8Mb–16Mb) M29AW Automotive Uniform Block MLC Flash Memory Part Numbering

JS 28F 512 M29AW H x

Package Code Device Features JS = 56-pin TSOP, 14 x 20mm, RoHS (Optional) Assigned to cover packing media PC = 64-ball FBGA, 11x13mm, RoHS and/or features or other specific configurations. Packaging Product Line Designator B = Tape and reel 28F = NOR parallel interface Functionality/Security our memory. Density H = Uniform block (highest block protected by VPP/WP#) 512 = 512Mb L = Uniform block (lowest block protected by VPP/WP#) 00A = 1Gb Parallel NOR Family Identifier M29AW = Automotive: Parallel Flash memory, uniform block, 3V core your innovation. your innovation.

48 49 M29DW Parallel NOR Flash Memory Part Numbering M29F Automotive Single-Bank 5V Flash Memory Part Numbering

M29 DW 323 D T 70 N 6 E M29F 160 F T 55 M 6

NOR Family Identifier Packaging NOR Family Identifier Packaging M29 = Standard Parallel NOR E = ECOPACK package, standard tray packaging M29F = Parallel NOR, single bank, top/bottom boot block, Blank = Standard tray packaging F = ECOPACK package, tape and reel packaging 5V supply voltage E = Standard tray packaging, RoHS Operating Voltage Range F = Tape and reel packaging, RoHS, 24mm Density T = Tape and reel packaging, 24mm DW = 2.7–3.6V VCC, multibank Operating Temperature Range 200 = 16Mb 3 = –40˚C to +125˚C (automotive) 400 = 32Mb Operating Temperature Range Density 6 = –40˚C to +85˚C 800 = 64Mb 3 = Automotive: –40˚C to +125˚C 323 = 32Mb, x8/x16 160 = 128Mb 6 = Automotive: –40˚C to +85˚C 127 = 128Mb, x8/x16 Package Code 128 = 128Mb, x16 Package Code 256 = 256Mb, x16 NF = 56-pin TSOP Litho M = SO44, 0.525in cu N = 48-pin TSOP F = 110nm Part Numbering N = 48-pin TSOP-1, 12 x 20mm, AL 4 Silicon Version or Architecture Option ZA = 64-ball TBGA ZE = 48-ball TFBGA ZA = 48-ball TBGA, 6 x 8mm, 0.8mm pitch

D, E, F, G Functionality/Security (only 8Mb, bottom boot) Guides B = Bottom boot (bottom blocks protected) Functionality/Security Speed T = Top boot (top blocks protected) Speed H = Uniform block (highest block protected) 5A = 55ns (automotive, temp range 6) 55 = 55ns (temp range 3: –40˚C to +125˚C) L = Uniform block (lowest block protected) 60 = 60ns 5A = 55ns (temp range 6: –40˚C to +85˚C) B = Bottom boot (bottom blocks protected) 7A = 70ns (automotive, temp range 6) T = Top boot (top blocks protected) 70 = 70ns

M29EW Parallel NOR Flash Memory Part Numbering

PC 28F 256 M29EW x H x

Package Code Device Features JR = 48-pin TSOP, RoHS, HF (Optional) Assigned to cover packing media JS = 56-pin TSOP, RoHS, HF and/or features or other specific configurations. PC = Fortified 64-ball BGA, RoHS, HF PZ = 48-pin BGA (RoHS, HF) Functionality/Security RC = Fortified 64-ball BGA H = Uniform block (highest block protected) L = Uniform block (lowest block protected) Product Line Designator B = Bottom boot (bottom two blocks protected) 28F = NOR parallel interface T = Top boot (top two blocks protected)

Density Lithography 032 = 32Mb, x8/x16 512 = 512Mb, x8/x16 Blank = 65nm 064 = 64Mb, x8/x16 00A = 1Gb, x8/x16 128 = 128Mb, x8/x16 00B = 2Gb (1Gb/1Gb), x8/x16 Parallel NOR Family Identifier our memory. 256 = 256Mb, x8/x16 M29EW = Parallel Flash memory, 3V core, 1.8–3.6V I/O your innovation. your innovation.

50 51 P30/P33 Parallel NOR Flash Memory Part Numbering G18 Parallel NOR Flash Memory Part Numbering

PC 28F 128 P 33 T F 60 x MT 28G U A A A 2 E GC - 0 S IT ES

Package Code Device Features Micron Technology Production Status JS = 56-pin TSOP, RoHS (Optional) Assigned to cover packing media Blank = Production PC = 64-ball Easy BGA, RoHS and/or features or other specific configurations. Product Family ES = Engineering samples RC = 64-ball Easy BGA 28G = G series Parallel NOR Speed Operating Temperature Range Voltage Product Line Designator 60 = 60ns IT = –40˚C to +85˚C (Grade 3 AEC-Q100) 28F = NOR parallel interface 65 = 65ns U = 1.7–2.0V AT = –40˚C to +105˚C (Grade 2 AEC-Q100) 70 = 70ns Density 75 = 75ns Special Options Density 256 = 256Mb 85 = 85ns A = Automotive quality 640 = 64Mb, x16 512 = 512Mb, x16 512 = 512Mb 95 = 95ns S = Standard 128 = 128Mb, x16 00A = 1Gb, x16 01G = 1Gb Blank = Various speeds Part Numbering 256 = 256Mb, x16 00B = 2Gb (1Gb/1Gb), x16 X = Product Longevity Program (PLP) Stack

NOR Family Identifier Lithography A = Single die Security Features Guides F = 65nm P = P30/P33 Parallel NOR 0 = Standard features Die Rev Code Operating Voltage Range Functionality A = Rev. A Package Codes B = Bottom boot B = Rev. B GC = 64-ball TBGA, 10 x 8 x 1.2mm 30 = 1.7–2.0V, 2.3–3.6V T = Top boot C = Rev. C 33 = 2.7–3.6V Interface Block Structure 1 = x16 E = Uniform 2 = x16 A/D MUX P30/P33 Stacked

PC 48F 3000 P0 Z T Q E x J3 Parallel NOR Flash Memory Part Numbering Package Code Device Features PC = 64-ball Easy BGA, RoHS (Optional) Assigned to cover packing media PC 28F 320 J 3 F 75 PF = 88-ball Quad+ BGA, RoHS and/or features or other specific configurations. RC = 64-ball Easy BGA RD = 88-ball Quad+ BGA Package Code Speed Speed JS = 56-pin TSOP, RoHS 75 = 75ns 60 = 60ns PC = 64-ball Easy BGA, RoHS 95 = 95ns Product Line Designator 65 = 65ns RC = 64-ball Easy BGA 105 = 105ns 48F = NOR parallel interface for stacked configurations 70 = 70ns TE = 56-pin TSOP 75 = 75ns Lithography Density 85 = 85ns 95 = 95ns Product Line Designator F = 65nm with HR-certified test flow 3000 = 128Mb, x16 Blank = Various speeds 28F = NOR parallel interface D = 130nm 4000 = 256Mb, x16 4400 = 512Mb (256Mb/256Mb), x16 Ballout Designator Density Operating Voltage Range our memory. 320 = 32Mb, x8/x16 3 = 3V VCC, 3V VPEN NOR Family Identifier Q = Quad+ 0 = Discrete 640 = 64Mb, x8/x16 P0 = P30/P33 Parallel NOR 128 = 128Mb, x8/x16 NOR Family Identifier 256 = 256Mb, x8/x16 Functionality J = J3 Parallel NOR Operating Voltage Range B = Bottom boot, top/bottom boot Z = Individual chip enable(s), 1.7–2.0V VCC, 1.7–3.6V VCCQ T = Top boot V = Virtual chip enable(s), 1.7–2.0V VCC, 1.7–3.6V VCCQ X = Individual chip enable(s), 2.3–3.6V VCC, 2.3–3.6V VCCQ T = Virtual chip enable(s), 2.3–3.6V VCC, 2.3–3.6V VCCQ your innovation. your innovation.

52 53 M28W Parallel NOR Flash Memory Part Numbering M58WR Parallel NOR Flash Memory Part Numbering

M28 W 160C T 70 N 6 T M58 W R 016 K T 7A ZB 6 E

NOR Family Identifier Packaging NOR Family Identifier Packaging M28 = Parallel NOR Blank = Standard tray packaging M58 = Parallel NOR E = Standard tray packaging E = ECOPACK package, standard tray packaging F = Tape and reel packaging F = ECOPACK package, tape and reel packaging Flash Identifier Operating Voltage Range U = ECOPACK package, tray packaging W = Multiple bank, burst mode W = 2.7–3.6V VDD, 1.65–3.6V VDDQ Operating Temperature Range Operating Temperature Range 6 = –40˚C to +85˚C Operating Voltage Range Density/Functionality 6 = –40˚C to +85˚C R = 1.7–2.0V VDD 160C = 16Mb, x16, boot block Package Code Package Code 320FC = 32Mb, x16, boot block ZB = 56-ball VFBGA 640HC = 64Mb, x16, boot block N = 48-pin TSOP Density/Functionality ZB = 46-ball TFBGA 016 = 16Mb, x16 Part Numbering 032 = 32Mb, x16 Automotive Temp Range Functionality Speed 064 = 64Mb, x16 7A = Automotive-grade certified –40˚C to +85˚C Guides B = Bottom boot 70 = 70ns T = Top boot Technology K = 65nm process Functionality B = Bottom boot T = Top boot

M58BW Parallel NOR Flash Memory Part Numbering

M58 B W 32F T 4 T 3 T

NOR Family Identifier Packaging M58 = Parallel NOR F = ECOPACK package, tape and reel packaging T = Standard tray packaging Flash Identifier B = Burst mode Operating Temperature Range 3 = –40˚C to +125˚C (automotive) Operating Voltage Range W = 2.7–3.6V VDD range for 45ns speed class Package Code 2.5–3.3V VDD range for 55ns speed class T = 80-pin PQFP 2.4V–VDD VDDQ range for 45ns and 55ns speed classes ZA = 80-ball LBGA

Density/Functionality

our memory. Speed 16F = 16Mb, x32, boot block, burst, 0.11µm process 32F = 32Mb, x32, boot block, burst, 0.11µm process 4 = 45ns 5 = 55ns

Functionality B = Bottom boot T = Top boot your innovation. your innovation.

54 55 3xx and 4xx SSD Part Numbering 4xx and 5xx SSD Part Numbering

MT FD D AC 128 M x x - 1 G 1 2 xx xx ES MT FD D AK 120 M AV - 1 AE 1 2 AB YY ES

Micron Technology Production Status Micron Technology Production Status Blank = Production Blank = Production Flash Drive (SSD) ES = Engineering sample Flash Drive (SSD) ES = Engineering sample MS = Mechanical sample MS = Mechanical sample Drive Interface Drive Interface A = SATA 1.5 Gb/s Operating Temperature Range B = SATA 3.0 Gb/s Customer Designator B = SATA 3.0 Gb/s Blank = Commercial (0˚C to +70˚C) D = SATA 6.0 Gb/s YY = Standard D = SATA 6.0 Gb/s E = SAS 6.0 Gb/s G = PCIe Gen2 F = PCIe Gen1 Hardware Feature Set G = PCIe Gen2 Additional Features Drive Form Factor Blank = Blank AB = Standard AA = Contact factory AF = Contact factory

Drive Form Factor Part Numbering AA = 1.8in, 5mm, Micro SATA connector AB = Contact factory AC = 2.5in, 9.5mm AC = Contact factory AA = 1.8in, 5mm, micro SATA connector AG = Full-height, full-length x8 AC = 2.5in, 9.5mm Extended Firmware Features AH = Full-height, half-length x8 AG = Full-height, full-length x8 Z = Blank Guides AK = 2.5in, 7mm Security Feature Set AH = Full-height, half-length x8 1 = Contact factory AR = Half-height, half-length x8 Blank = Blank AK = 2.5in, 7mm 2 = SED (self-encrypting drive) AT = mSATA 1 = Contact factory AR = Half-height, half-length x8 3 = Oprom 1 (Bootable) – P420h only 2 = SED (self-encrypting drive) AT = mSATA 4 = UEFI – P420h only Drive Density 4 = Oprom 1 (Bootable) – P320h only AV = M.2, 80mm x 22mm x 3.5mm 001 = 1GB 064 = 64GB 5 = UEFI – P320h only AW = 2.5in, 5mm Sector Size 002 = 2GB 120 = 120GB 1 = 512 byte 004 = 4GB 128 = 128GB BOM Revision Drive Density 008 = 8GB 175 = 175GB Production: ES: 050 = 50GB 350 = 350GB NAND Component 400 = 400GB 014 = 14GB 200 = 200GB 1 = 1st generation A = 1st generation 060 = 60GB AA = 32Gb, SLC, x8, 3.3V, 25nm 480 = 480GB 016 = 16GB 256 = 256GB 2 = 2nd generation B = 2nd generation 064 = 64GB AB = 64Gb, MLC, x8, 3.3V, 25nm 500 = 500GB 025 = 25GB 350 = 350GB 3 = 3rd generation C = 3rd generation 100 = 100GB AC = 64Gb, MLC, x8, 3.3V, 20nm 512 = 512GB 030 = 30GB 400 = 400GB Etc. ... Etc. ... 120 = 120GB AD = 64Gb, MLC, x8, 3.3V, 20nm 700 = 700GB 032 = 32GB 512 = 512GB 128 = 128GB AE = 128Gb, MLC, x8, 3.3V, 20nm 800 = 800GB 050 = 50GB 700 = 700GB NAND Component 175 = 175GB AF = 32Gb, MLC, x8, 3.3V, 34nm 960 = 960GB 060 = 60GB A = 4Gb, SLC, x8, 3.3V, 72nm 200 = 200GB AG = 32Gb, MLC, x8, 3.3V, 25nm 1T0 = 1024GB B = 8Gb, SLC, x8, 3.3V, 50nm 240 = 240GB AH = 64Gb, MLC, x8, 3.3V, 20nm 1T4 = 1.4TB NAND Type C = 16Gb, MLC, x8, 3.3V, 50nm 256 = 256GB AJ = 64Gb, SLC, x8, 3.3V, 20nm S = SLC D = 4Gb, SLC, x8, 3.3V, 50nm M = MLC E = 16Gb, MLC, x8, 3.3V, 34nm NAND Type BOM Revision F = 32Gb, MLC, x8, 3.3V, 34nm S = SLC Production: ES: G = 32Gb, MLC, x8, 3.3V, 34nm M = MLC 1 = 1st generation A = 1st generation H = 8Gb, SLC, x8, 3.3V, 50nm 2 = 2nd generation (P420m only) J = 32Gb, MLC, x8, 3.3V, 25nm 3 = 3rd generation B = 2nd generation K = 64Gb, MLC, x8, 3.3V, 25nm Etc. ... C = 3rd generation L = 4Gb, SLC, x8, 3.3V, 34nm Operating Temperature Range Etc. ... M = 8Gb, SLC, x8, 3.3V, 34nm Commercial (0˚C to +70˚C) for all SSDs N = 16Gb, SLC, x8, 3.3V, 34nm Product Family Sector Size AV = M500 1 = 512 byte AY = M550 AX = P420m our memory. Product Family AZ = M510 AE = C200/P200 AF = eUSB AG = C300 AH = P320 AJ = e230 AL = P300 AM = C400 AN = P400m AR = P400e your innovation. your innovation.

56 57 Product Lifecycle Solutions Web Tools

Memory Choices for Mass Market One-Stop Product Catalogs Visit micron.com to find all of our detailed product specification data, including part status, recommended Distribution Customers parts (where applicable), disty stock and sample information, data sheets, and modeling tools. You also can find information about our plans for long-term product support, design webinars, and product FAQs. Micron’s Product Lifecycle Solutions bring the stability of our memory support into alignment with the lifecycle of your design. Depending on your specific requirements, choose between our standard lifecycle Customizable Workspace support and the extended support of our Product Longevity Program (PLP). The Micron Workspace is where you can save and organize part pages, data sheets, and links for easy Standard Lifecycle Products PLP Products access in the future. For customers with application lifecycles • Save parts, documents, and pages for fast and easy access * Density Temp of up to 7+ years Product Family • Range Range Organize documents and parts in folders • • DRAM, LPDRAM, NOR, SLC/ MLC NAND, LPDDR2 (MT42) 512Mb AT Share parts, pages, or project folders with colleagues • e•MMC, MCPs, SSDs, and other products DDR3 (MT41) 1–4Gb IT, AT View secure documents that you already have access to view via My Documents • • One-stop supplier for a broad range of DDR2 (MT47) 1–2Gb IT, AT Receive messages from Micron contacts in My Messages

applications DRAM DDR (MT46) 256–512Mb IT, AT • Leading-edge technology, optimum SDRAM (MT48) 128–256Mb IT, AT Micron Blog Product Lifecycle performance/feature combinations, Parallel NOR (M29EW) 64Mb–1Gb IT micronblogs.com

multiple densities, cost-effective products Solutions Parallel NOR (M29W) 8–256Mb IT, AT • Optimum performance/feature combinations, Join the conversation at Micron’s blog, where we highlight our recent technology developments—from multiple densities, cost-effective products Parallel NOR (M58BW) 16Mb AT advanced storage solutions to the cutting edge of server, computing, and mobile memory. • Strong record of long-term support for legacy Parallel NOR (P30/P33) 64Mb–1Gb IT products Parallel NOR Parallel NOR (J3) 64–256Mb IT Extensive Support Resources • Up to 5-year roadmap visibility for standard Serial NOR (N25Q) 32–256Mb IT, AT micron.com/support products Serial NOR (M25PE/M45PE) 4–16Mb IT • Standard JEDEC conversion and • Technical notes SPI NOR Serial NOR (M25P) 4–16Mb IT, AT discontinuance time lines apply • FBGA decoder SLC, VLP NAND Flash (MT29) 8Gb IT • Part numbering guides SLC, LP NAND Flash (MT29) 1–4Gb IT • General FAQs Web Tools Product Longevity SLC, SPI NAND Flash (MT29) 1–4Gb IT NAND • Purchasing information Program (PLP) SLC, SP NAND Flash (NAND) 128–512Mb IT For customers with *The partial part numbers referenced above are product family designators only. PLP parts are a select subset of Micron’s portfolio; not all part types, configura- Micron System Power Calculator application lifecycles tions, densities, or options are included. For specific part numbers, refer to the of up to 7–10+ years PLP part list at www.micron.com/lifecycle or contact your sales representative. micron.com/powercalc

• Select DRAM, NAND,

our memory. Sales Representative Lookup and NOR products • Stability and longevity for micron.com/how-to-buy mission-critical applications with extensive Locate a sales representative in your area who can help you buy products, create a corporate account, design-in or requalification requirements and gain expertise. • Minimum 10-year form, fit, function compatibility from the date of introduction • Extended 2-year conversion timeline in case ©2011 Micron Technology, Inc. All rights reserved. Micron, the Micron logo, and ClearNAND are trademarks of Micron Technology, Inc. RLDRAM is a trademark of Qimonda of part number change or discontinuance AG in various countries, and is used by Micron Technology, Inc. under license from Qimonda. CellularRAM is a registered trademark of Micron Technology, Inc., inside the U.S. and a trademark of Qimonda AG outside the U.S. All other trademarks are the property of their respective owners. Lead is not intentionally added by Micron during the

your innovation. your innovation. manufacturing process, but it can be present in trace amounts in the raw materials used to manufacture the finished products. Products are warranted only to meet Micron’s production data sheet specifications. Products and specifications are subject to change without notice. Rev. 07/14 EN.L 58 59

(208) 368-3900 micron.com (011) +1 (208) 368-3900(011) information, visit Micron’s information, visit Micron’s web site or phone us today. and other product and sales and other product For data sheets, technical notes,

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