2009 NSREC Are

2009 IEEE NUCLEAR & SPACE RADIATION EFFECTS CONFERENCE

JULY 20 — 24, 2009 HILTON QUÉBEC, QUÉBEC CITY, CANADA

Sponsored by IEEE/NPSS Radiation Effects Committee

Hilton Québec Posters and Workshop Level 1 Porte St-Louis, Porte Kent and Porte du Palais

Porte St-Louis rs Short Course Reception anteroom to va le E Foyer 1 n o i Porte Kent anteroom t a Monday Breakfast r C t E s i s Porte du Palais R g m S e o o N R r

Foyer 1 t anteroom s Tuesday - Friday Breakfasts Stairs e Porte du Palais R Foyer 1 and anteroom

Escalators

Hilton Québec Aerobics n i Dufferin Ground Floor r e f f u D

rs to va le R E e st au A r l a le nt gr -b o ar y bb Lo (Up to Level 1 for Stairs (Down to) NSREC Registration) Place Québec Escalators Hilton Québec Main Entrance

Travel through Place Québec Shops and Food Court

(Down to) Québec City Convention Centre Entrance Honoré-Mercier Short Course and Technical Sessions MultiPurpose Hall 2000A and 2000B

Exhibits AV Preview Room MultiPurpose Hall 2000C and 2000D 2104A

Foyer 2000 Restrooms

Restrooms 2102A 2103 MultiPurpose Hall 2104A 2102B 2104A

2000D 2000C 2000B 2000A ScheduleSchedule

Monday Tuesday Wednesday Thursday Friiday Tiime JulyJuly 20 JulyJuly 21 JulyJuly 22 JulyJuly 23 JulyJuly 24

7:30 [7:30] Continental Breakfast, [7:30] Continental Breakfast, [7:30] Continental Breakfast, [7:30] Continental Breakfast, [7:30] Continental Breakfast, Hilton Québec Level 1, Hilton Québec Level 1, Hilton Québec Level 1, Hilton Québec Level 1, Hilton Québec Level 1, Porte du Palais Foyer/Anteroom Foyer/Anteroom Foyer/Anteroom Foyer/Anteroom 8:00 [8:00] Short Course Introduction Ken LaBel Multipurpose Hall 2000A/B [8:10] Part 1 – Programmatic Aspects 8:30 Overview [8:30] Conference Opening [8:30] Invited Talk [8:30] Invited Talk John M. Stone Multipurpose Hall 2000A/B Québec: World Heritage City The Road that Walks, Barry Lane [9:00] Invited Talk A History of Travel on the 9:00 Multipurpose Hall 2000A/B Understanding Hardness- St. Lawrence River [9:10] Session A by-Design Approaches David Mendel Single-Event Effects: for Fabricating Rad-Hard Multipurpose Hall 2000A/B Mechanisms and Modeling Microelectronic Components [9:20] Part 2 – Ronald C. Lacoe Radiation Effects Point Multipurpose Hall 2000A/B of View 9:30 Keith Avery [9:30] Session G [9:40] Session D Hardening by Design [9:40] Session I Photonic Devices and Single-Event Effects: Devices 10:00 Integrated Circuits and Integrated Circuits [10:15] Break, MultiPurpose Hall 2000C/D 10:30 [10:30] Break, Foyer 2000 [10:30] Break, [10:30] Break, Foyer 2000 MultiPurpose Hall 2000C/D [10:35] Break, Foyer 2000 [10:45] Session A [10:55] Part 3 – (continued) 11:00 Reliability Considerations [11:00] Session E [11:00] Session I Hardness Asurance [11:05] Session H (continued) Doug Sheldon Space and Terrestrial Environments 11:30

[11:55] Lunch 12:00 [12:00] Short Course Luncheon, Porte du Palais/Kent/St. Louis [12:05] Lunch Rooms, Québec Hilton Level 1 [12:15] Lunch 12:30 [12:30] End of Conference

1:00 [1:10] Part 4 – Electronic Designer’s 1:30 Perspective [1:30] Session F [1:30] Invited Talk Dr. Kirk Kohnen and Kay Jobe Dosimetry Combating Cyber Crime: [1:45] Session B A New Canadian Cyber 2:00 Basic Mechanisms of Forensic Organization Radiation Effects Dr. Mourad Debbabi [2:15] Part 5 – Example 1: Trading ASIC 2:30 and FPGA Considerations [2:30] Data Workshop [2:35] Poster Session Porte St-Louis, Porte Kent for System Insertion Porte St-Louis, Porte Kent Melanie Berg and Porte du Palais and Porte du Palais Rooms, Québec Hilton Level 1 3:00 [3:05] Break, Rooms, Québec Hilton Level 1 [3:15] Break, Foyer 2000 MultiPurpose Hall 2000C/D 3:30 [3:35] Session C [3:40] Part 6 – Radiation Effects in Devices Example 2: Trading Mixed and Integrated Circuits 4:00 Signal Devices for Instrument or High-Precision Aplications Dr. Steven C. Moss 4:30 [4:40] Wrap-up [4:45] End of Sessions [4:50] Exam (for students [4:55] End of Sessions 5:00 requesting CEU credit only) [5:00] End of Sessions [5:15 to 7:00] Radiation Effects [5:20] End of Short Course Committee Open Meeting, 5:30 MultiPurpose Hall 2000A/B

6:00 [6:00 to 10:00] Industrial Exhibits Reception 6:00 Cocktails 6:30 7:00 Buffet [6:30 to 11:30] MultiPurpose Hall 2000C/D Conference Social Evening Dinner Cruise 8:15 Dinner

ContentsContents

Chairman’s Invitation ...... 1 Short Course Program ...... 2 Short Course ...... 3 Course Description ...... 3 Part 1 - Programmatic Aspects Overview ...... 4 Part 2 - Radiation Effects Point of View ...... 5 Part 3 - Reliability Considerations ...... 6 Part 4 - Electronic Designer’s Perspective ...... 7 Part 5 - Example 1: Trading ASIC and FPGA Considerations for System Insertion ...... 8 Part 6 - Example 2: Trading Mixed Signal Devices for Instrument or High-Precision Aplications ...... 9 Technical Program ...... 10 Technical Information ...... 10 Invited Speakers ...... 10 Late-News Papers ...... 10 Tuesday, July 21 ...... 11 Session A - Single-Event Effects: Mechanisms and Modeling ...... 11 Session B - Basic Mechanisms of Radiation Effects ...... 14 Session C - Radiation Effects in Devices and Integrated Circuits ...... 16 Wednesday, July 22 ...... 19 Invited Talk - Québec: World Heritage City ...... 19 Session D - Photonic Devices and Integrated Circuits ...... 19 Session E - Hardness Asurance ...... 20 Session F - Dosimetry ...... 22 Poster Session ...... 23 Thursday, July 23 ...... 24 Invited Talk - Understanding Hardness-by-Design Approaches for Fabricating Rad-Hard Microelectronic Components ...... 24 Session G - Hardening by Design ...... 24 Session H - Space and Terrestrial Environments ...... 25 Invited Talk - Combating Cyber Crime: A New Canadian Cyber Forensic Organization Created to Fight Cyber Crime ...... 27 Data Workshop ...... 28 Friday, July 24 ...... 33 Invited Talk - The Road That Walks, A History Of Travel On The St. Lawrence River ...... 33 Session I - Single-Event Effects: Devices and Integrated Circuits ...... 33 RESG NEWS ...... 38 Awards ...... 42 2008 NSREC Awards ...... 42 2009 Radiation Effects Award ...... 42 Conference Information ...... 43 Rooms for Side Meetings ...... 43 Messages ...... 43 Continental Breakfast and Coffee Breaks ...... 43 Business Center ...... 43 Registration and Travel ...... 44 Conference Registration ...... 44 On-Site Registration Hours ...... 44 Conference Cancellation Policy ...... 44 Hotel Reservations and Information ...... 45 Airport and Transportation Information ...... 46 Industrial Exhibits ...... 47 2009 IEEE NSREC Technical Sessions and Short Course Registration Form ...... 49 2009 IEEE NSREC Activities Registration Form ...... 51 Social Program ...... 53 Industrial Exhibits Reception ...... 54 Evening Dinner Cruise - Conference Social ...... 55 Local Activities ...... 57 Weather and Clothing ...... 59 2009 Conference Committee ...... 60 Official Reviewers ...... 61 Radiation Effects Steering Group ...... 62 2010 Announcement and First Call for Papers ...... 63

ii Chairman’sChairman’sSectionSection HeadingHeading InvitationInvitation

On behalf of the IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee, I invite you to attend the 46th annual IEEE International Nuclear and Space Radiation Effects Conference (NSREC). For the second time in the conference’s history, we venture north of the border to a truly unique and wonderful venue, Québec City in the Canadian province of Québec. Québec City will provide an outstanding backdrop for the premier research and development conference on radiation effects in microelectronics. The conference will feature an outstanding technical program, a one-day short course preceding the technical program, a Radiation Effects Data Workshop and an accompanying Industrial Exhibit. Scientists, engineers and managers from around the world will attend the conference to discuss the most recent results in radiation effects. We want you to be a part of this exciting event.

The Technical Program Chair, Lew Cohn from NRL, and his technical committee have assembled a set of contributed papers that detail the latest information on radiation effects in electronic and photonic materials, devices, circuits, sensors and systems, as well as semiconductor processing technology and design techniques for producing radiation tolerant devices and integrated circuits. These papers will be offered in Oral and Poster sessions. The Radiation Effects Data Workshop will consist of poster presentations describing new radiation effects data, new simulation techniques and facility developments. In addition, three invited talks will be given at the conference highlighting our Canadian venue: a history of Québec and French Canada; a history of the Saint Lawrence Seaway; and the new Canadian Cyber Forensic Organization created to fight cyber crime.

Ken LaBel from NASA Goddard, this year’s Short Course Chair, has selected a topic that is very pertinent to the radiation effects community “Selection of Integrated Circuits for Space Systems.” With commercial electronics dominating the semiconduc- “Bienvenue á Québec! (Welcome to tor market, the process for selecting integrated circuits that must perform in the space Québec!) This year’s Nuclear and radiation environment has become very complex. The course will address the meth- Space Radiation Effects Conference odology for selection including the risk trade space. Tutorials looking at the design, (NSREC) will take place in Québec reliability, radiation and the programmatic aspects of the selection process will be City, Canada. Everyone associated given. In addition, there will be two presentations that will provide examples of the with the conference has been hard trades that must be made. at work to make sure you and your families have a fabulous time. We A key element of the conference is the Industrial Exhibit. Laura Burcin from BAE have an outstanding technical Systems has organized the exhibit this year. The exhibit provides a comfortable set- program for attendees and a ting for the attendees to review and discuss the wide range of products and services wonderful social program for the provided by the exhibitors. The offerings include radiation tolerant devices and inte- companions. I encourage everyone to grated circuits, radiation analysis and testing services as well as radiation test facili- spend a few extra days either before ties and equipment. On Tuesday evening, attendees and their companions are invited or after the conference so you can to a reception that highlights the Industrial Exhibit. experience one of North America’s The Local Arrangements Chair, Dave Hiemstra from MDA Space Missions has pre- top tourist destinations. So grab your pared an outstanding social program for the attendees, as well as their companions. passports and travel by plane, train In a departure from tradition given the unique conference site, four events will or automobile to the IEEE’s 2009 be offered. A tour of the historic district of Old Québec will start off the week on NSREC.” Monday. Next, a trip to the Montmorency House and Falls with lunch is planned. On Wednesday, our conference social will be a Saint Lawrence Seaway cruise with din- Mark Hopkins ner. Finally, the social program will conclude with a trip to the Île d’Orléans where NSREC 2009 General Chairman the French provincial lifestyle is on display.

The conference hotel is the four-star Hilton Québec City. Located just outside the historic district, all the guest rooms have excellent views of the city. Shops, museums, restaurants and other attractions such as the Chateau Frontenac, the Parliament Building and the Citadel are all within easy walking distance. Visit us on the web at: www.nsrec.com I and the conference committee are excited about this year’s NSREC and its incredible location. We look forward to seeing you all in Québec City.

ShortShort CourseCourse ProgramProgram

Selection of Integrated Circuits for Space Systems

multipurpose hall 2000A and 2000b – Monday, July 20

7:30 am Registration/continental breakfast (Porte du Palais, Québec hilton level 1)

8:00 am Short course introduction Ken LaBel NASA Goddard

8:10 am PART 1 – Programmatic Aspects Overview John M. Stone Southwest Research Institute

9:20 am Part 2 – Radiation Effects Point of View Keith Avery Air Force Research Laboratory

10:30 am Break (foyer 2000)

10:55 AM Part 3 – Reliability Considerations Doug Sheldon Jet Propulsion Laboratories

12:00 PM Short course luncheon (Porte du Palais/Kent/St. Louis rooms, Québec hilton level 1)

1:10 PM Part 4 – Electronic Designer’s Perspective Dr. Kirk Kohnen and Kay Jobe Boeing Space and Intelligence Systems (S&IS)

2:15 PM Part 5 – Example 1: Trading ASIC and FPGA Considerations for System Insertion Melanie Berg MEI Technologies Inc.

3:15 PM Break (foyer 2000)

3:40 PM Part 6 – Example 2: Trading Mixed Signal Devices for Instrument or High-Precision Applications Dr. Steven C. Moss The Aerospace Corporation

4:40 PM Wrap-up

4:50 PM Exam (only for students requesting CEU credit)

5:20 PM End of short course

ShortShort CourseCourse

Course Description A one-day Short Course “Selection of Integrated Circuits for Space Systems” will be presented at the 2009 Nuclear and Space Radiation Effects Conference (NSREC). With the advent of commercial devices dominating the semiconductor market, the decision process for selecting ICs for space systems has become more complex. In this short course, we provide a discussion of these processes and the risk trades involved. The main concepts revolve around the selection of device types (i.e., what circuits are appropriate to provide a function), as well as the question of commercial-off-the-shelf (COTS) versus radiation hardened (RH) components.

The Short Course is organized into six sessions starting with a systems engineering and management perspective for selection. The second through fourth sessions delve into the technical considerations: radiation, reliability, and design performance. Finally, two examples will be provided focusing on advanced digital and mixed signal applications, respectively.

The speakers for the 2009 Short Course are all experts in their respective areas. They will present the knowledge base in their topical areas extending the information beyond the traditional radiation effects short course and providing a larger perspective on the issues including COTS versus RH trades. The speakers will focus on determining the relevant characteristics that should be weighed for selection.

The course is applicable to designers, radiation effects engineers, component special- ists, and other technical and management personnel who are involved in developing reliable systems not only for the space environments, but for other radiation environments as well. This course provides a unique opportunity for NSREC attendees to benefit from the expertise of the instructors, as well as the in-depth coverage and application-oriented perspective provided by the short course format. Each instructor will develop the core content of their respective topics from background material largely found in the literature and from their unique interactions with actual space systems. As such, the course will benefit both new and experienced engineers, scientists, and managers. In-depth notes will be provided at registration.

Continuing For those interested in Continuing Education Units (CEUs), there will be an open- Education book test at the end of the course. The course is valued at 0.6 CEUs and is endorsed Units (ceus) by the IEEE and the International Association for Continuing Education and Training (IACET).

Short course Ken LaBel has worked at NASA since 1983 after graduating from The Johns Hopkins Chairman University with a BES in EECS. His career at NASA has included: - Hardware/software for ground systems, - Advanced technology, - Flight hardware, - Systems engineering, and, - Radiation hardness assurance/research for >50 NASA projects. Mr. LaBel has published over 100 papers as author/co-author and is a recognized expert in radiation effects systems engineering. He has won best presentation awards at the Government Microcircuits and Applications Conference (GOMAC) and at IEEE Radiation Effects Data Workshop (REDW), and nominated at Radiation Effects on Components and Systems (RADECS) conference, NSREC, and Hardened Electronics and Radiation Technology (HEART) Conference. Mr. LaBel has taught three short courses at the RADECS, and one each at NSREC and HEART. He is an IEEE member. Ken LaBel Short Course Chairman

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Programmatic Aspects Overview John M. Stone Southwest Research Institute

John Stone will discuss the programmatic (cost and schedule) aspects of hardware development for the radiation environment. Too often, systems, hardware development, and radiation engineers don’t understand the impact that their work has on the programmatic success of a given project. This section of the short course will empha- size the close link between everyday engineering and programmatic success. After John Stone has 22 years experi- an overview of the scope and importance of programmatic issues, Mr. Stone will ence in space-flight electronics discuss the connection between those issues and the requirements definition process. development. He graduated from This will be followed by a discussion of the programmatic impact created by product Trinity University in 1984 (BS implementation and assurance activities. A variety of practical examples drawn from Engineering Science) and from the various projects will be used to illustrate the points made. University of Texas-Austin in 1986 (MSE Electrical Engineering.) At SwRI since 1987, he has worked Introduction as a designer, systems engineer, ■ Short course goals and project manager on C&DH ■ The “ideal” program and science electronics develop- ■ Programmatic introduction ment programs and has served as ■ Programmatic success drivers an external reviewer and analyst ■ Importance for the GSFC Explorer’s program. He is currently a payload systems Programmatic Impacts from Requirements Definition Activities engineer with responsibility for ■ “The prime requirement” reliability and radiation effects ■ Types and characteristics of requirements activities for the MMS mission ■ Competing desires drive programmatics instrument suite. First introduced ■ The importance of balance to radiation effects issues in 1992, ■ Application he has become increasingly interested in the field, attending every Programmatic Impacts from Product Implementation Activities NSREC since Atlanta in 2004. He ■ An important distinction is a member of IEEE and NPSS ■ Implementation trade Studies and is currently chief engineer in ■ Sample implementation choices and programmatic implications Southwest Research Institute’s ■ Application Department of Space Systems. Programmatic Impacts from Radiation Assurance Activities ■ Sample issues and programmatic implications ■ Application

Conclusion

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Radiation Effects Point of View Keith Avery Air Force Research Laboratory

Keith Avery will discuss what is meant by the term “radiation hardened” (RH) as it applies to modern micro-circuits. This includes total ionizing dose (TID) and single event effects (SEE) along with mitigation techniques that are available. The designer is left performing a tradespace between using commercial-off-the-shelf (COTS) devices vs. radiation hardened devices as it applies to a board level design and an example Keith Avery is the Program Lead will be shown. This tradespace will include items such as cost of upscreening a COTS for the Integrated Microsystems part, cost of an ASIC development, and the impacts on size, weight, and power program at the Air Force Research (SWAP) when making those choices. Woven into these trades is the overriding factors Laboratory focusing on advanced of mission risk and mission cost which will impact each decision. packaging and optoelectronics for space. He received his BS degree from DeVry Institute of Introduction Technology in 1983. For the first 12 years of his career he worked The Environment in the commercial sector design- ■ Solar Cycles ing digital and analog circuits ■ Solar Flares for commercial, industrial, and ■ Coronal Mass Ejections telephony applications. Prior to ■ Orbit Dependency joining AFRL he worked as a government contractor perform- Radiation Effects ing design activities for space ■ Ionizing experiments, advanced packaging ■ Non-Ionizing techniques, and radiation effects ■ Single Event Effects on micro-electronics. During his career he has increased his level Mitigation Techniques of responsibility for design activi- ■ Shielding ties and program management. ■ Design Techniques He has authored or co-authored numerous papers on designs for Mission Example space and radiation effects. Mr. ■ Mission Parameters Avery is a member of IEEE and ■ Design Choices NPSS. ■ Rad-Hard vs. COTS

Summary

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Reliability Considerations Doug Sheldon Jet Propulsion Laboratories

Doug Sheldon will focus on the understanding of reliability as it pertains to individual devices, as well as to systems. The continued evolution in parts technology requires a similar evolution of reliability considerations for successful risk management of mission requirements. This talk will provide a framework of modern reliability tools and concepts as they relate to risk management. A mathematical framework Dr. Sheldon is currently the will be established based on process technology and physics of failure models. These Group Supervisor for Electronic concepts are then integrated with quality metrics. This fundamental inter-relationship Parts Engineering at the Jet between quality and reliability is then used to define appropriate risk management Propulsion Laboratory. He is tools that can be used by engineers and managers to correctly evaluate parts. With also a principal investigator in these interrelationships appropriately defined, such concepts as lifetimes, screening areas of non-volatile memory and levels, etc. can now be accurately implemented. FPGA research and has been at JPL since 2003. Dr. Sheldon has over 25 years experience in the IC Technology Trends development, manufacture and application of semiconductors. Generalized Reliability Overview He has held various engineering and management posi- Thermodynamics Fundamentals tions at companies that include Agilent Technologies, Lattice Acceleration Models and Statistics Semiconductor, Racom Systems, Ramtron and Inmos. Dr. Sheldon Yield and Screening has a BA in Physics from the University of Colorado, an MS Burn In and Scaling in Physics from the University of Oregon and a Doctorate in Examples Management from Colorado Technical University. Modern Techniques and Future Trends

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Electronic Designer’s Perspective Dr. Kirk Kohnen and Kay Jobe Boeing Space and Intelligence Systems (S&IS)

Dr. Kirk Kohnen and Kay Jobe will discuss the challenges faced by electronic systems designers in the selection of ICs for space missions. Commercial electronic devices provide substantial improvements in SWAP when compared with their RH counterparts. System requirements often will drive these non-RH ICs to be Dr. Kirk Kohnen is a Kay Chesnut Jobe is inserted into systems. However, since these parts are not designed Senior Scientist with a Chief Scientist with to tolerate the space environment, tradespaces exist for design and Boeing’s Space and Boeing’s Space and system complexity as it relates to the successful device insertion. Intelligence Systems Intelligence Systems Dr. Kohnen and Ms. Jobe will focus on the electrical performance (S&IS) division. He (S&IS) division. She requirements that drive the selection of state-of-the art technologies holds a BS degree received a BS in EE and the enabling features that systems desire. A discussion compar- in Information and from University of ing modern commercial device performance versus the RH options Computer Science Colorado in 1980. She will be presented. This will be followed by an overview of apply- (1982) and BS (1982), joined Hughes Space ing the general challenges described in Parts 1-3 for state-of-the-art MS (1984), and Ph. D. and Communications device offerings using practical samples for actual missions. (1988) Degrees in in 1980 where she Electrical Engineering designed and imple- from the University of mented timing systems Introductory Comments California, Irvine. He for space applications. joined Hughes Aircraft She has developed Straw-Man Requirements in 1981 and held seminal principles ■ Total Dose Hughes Master’s and for determining the ■ Single Event Effect Rates Doctoral fellowships. impacts of single event ■ It’s a Competition Currently, Dr. Kohnen effects on multi-GHz is a Boeing Associate RF circuitry used for Electronic Trade-offs Technical Fellow and the clocking of digital ■ COTS vs. RH ASICs an adjunct professor logic. Currently, Kay ■ COTS vs. RH SRAM at Loyola Marymount is a Boeing Technical ■ COTS vs. RH DRAM University, Los Angeles, Fellow where she iso- ■ COTS vs. RH FPGA teaching graduate lates, understands and ■ COTS vs. RH A/D classes in micropro- fixes anomalies both cessor system archi- for systems in test and Technical Trade-offs tecture. Dr. Kohnen satellites on orbit. Kay ■ Capability vs. Availability has been developing also works extensively ■ Hierarchy of Design Trade-offs system architecture in the radiation com- ■ COTS-Driven Packaging Issues techniques for single munity; she has served ■ Wearout Mechanisms event mitigation since as NSREC’s 2003 ■ COTS Wearout Mechanism Mitigation joining Hughes Space Finance Chair, 2005’s ■ Hidden Circuitry and Communications Local Arrangements in 1998. He holds 14 US Chair, as Secretary for Summary and Concluding Remarks patents, including two the Radiation Effects in the field of single Steering Group in 2006, event effects mitigation. and is the Conference Chair for the upcoming 2011 NSREC (See you all in two years!)

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Example 1: Trading ASIC and FPGA Considerations for System Insertion Melanie Berg MEI Technologies Inc.

Melanie Berg will utilize the concepts discussed in Parts 1-4 for the selection of high performing digital devices. The presentation will begin with general definitions and comparisons of the varying device architectures. Within this section, similarities and differences of ASICS and FPGAs will be presented focusing on the radiation, reliability, and design performance aspects. A brief discussion of radiation effects and Melanie Berg received her MS mitigation strategies specific to ASIC and FPGA design implementation will follow. degree in Electrical Engineering A sample trade will be performed illustrating how the information provided in previ- from the University of Pittsburgh ous sections is used for selecting an FPGA or ASIC for space missions. in 1990. In 1990 Ms. Berg joined IBM’s ASIC Advance Logic Design Team in Poughkeepsie Motivation and Trends Preliminary Design Development NY. She has been part of several ■ Flexibility vs. Efficiency ■ Custom ASIC development teams responsible ■ In-flight Reconfigurable • SEU susceptibility for high speed multi-million Computing • Common Mitigation gate ASIC and complex FPGA • Preliminary Architecture implementations. Ms. Berg is Device Selection Process • Potential Risk currently a member of IEEE and ■ Flow Diagram • Error Prediction has joined the Radiation Effects ■ Device Characteristics ■ Anti-fuse FPGA and Analysis group at NASA • Commonalities • SEU susceptibility Goddard Space Flight Center. • Differentiation • Common Mitigation She has published and presented • Fault Tolerance • Preliminary Architecture several papers concerning such • Potential Risk topics as Reliable Synchronous Single Event Upsets (SEUs) • Error Prediction Design Methodology, Mitigation ■ Generation ■ SRAM based FPGA Strategies for Critical Circuitry, ■ Propagation • SEU susceptibility and Hardness Assurance for • Capacitance Effects • Common Mitigation Space Flight Projects. Ms. Berg is • Frequency Effects • Preliminary Architecture presently investigating radiation ■ Capture • Potential Risk effects and applicable mitigation • Static • Error Prediction strategies for the potential inser- • Dynamic tion of Field Programmable Gate Power Trade Arrays (FPGAs) and ASICS into critical space flight projects. Reliability Analysis

Schedule Impact

Summary

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Example 2: Trading Mixed Signal Devices for Instrument or High-Precision Applications Dr. Steven C. Moss The Aerospace Corporation

Dr. Steven C. Moss will discuss trades associated with using analog‑to-digital converters for sensor applications for space systems. Types of ADCs and metrics com- monly used to evaluate ADCs will be presented, followed by a discussion of how ADCs are used in conjunction with sensors such as focal plane arrays. The sensitivity of ADCs of various types to space radiation effects including total integrated dose, Dr. Steven C. Moss is Director of displacement damage, and single event effects will be discussed. Generic reliability the Microelectronics Technology issues, as well as those specific to ADCs will be discussed. Tradeoffs between perfor- Department at The Aerospace mance, resource requirements, reliability, and radiation sensitivity will be discussed. Corporation. He holds a BS Finally, advanced ADCs and the direction of research into ADCs will be discussed. Degree (Arkansas A&M College, 1970, physics and mathematics), a MS Degree (Purdue University, Introduction 1972, physics), and a Ph. D. Degree (North Texas State Sensor Example: Analog Signal Chain for Imaging Focal Plane Array University, 1981, physics). He held a NRC-NRL Post-Doctoral Analog Signal Chain Trade Space Associateship at NRL (1981-1982) ■ Discrete Component Options vs Integrated Solutions and worked as Visiting Assistant ■ Imaging Focal Plane Array Options Professor with the Center for ■ Control Electronics Applied Quantum Electronics ■ Post-FPA Sampling Options at North Texas State University ■ Gain Stage Options (1982-1984). He joined The ■ Voltage Reference Options Aerospace Corporation in 1984, ■ Analog-to-Digital Converter (ADC) Options where he has held positions with increasing responsibility since. Analog-to-Digital Converters Dr. Moss is a member of APS, ■ How are ADCs used in conjunction with sensors? OSA, MRS, SPIE, AAPT, and is ■ Types of ADCs a senior member of the IEEE. ■ Metrics for ADCs He has served for 13 years as ■ ADC Test Standards Treasurer of the SEE Symposium and on its organizing committee. Specific Issues for use of ADCs in Space ■ Radiation sensitivity of ADCs ■ ADC reliability issues

Trade Spaces ■ Performance ■ Resource requirements ■ Radiation sensitivity ■ Reliability

Future ADCs ■ Advanced microelectronic ADCs ■ Photonic/optoelectronic ADCs

Summary

TechnicalTechnical ProgramProgram

Technical The NSREC technical program will consist of contributed oral, poster papers, a data Information work shop and three invited papers. The oral presentations will be 12 minutes in duration with an additional 3 minutes for questions. The technical sessions and chairpersons are:

■ Single-Event Effects: Mechanisms and Modeling Chair: Vincent Pouget, IMS-CNRS, France ■ Basic Mechanisms of Radiation Effects Chair: Peter Truscott, Qinetiq, United Kingdom ■ Radiation Effects in Devices and Integrated Circuits Chair: Mike Alles, Vanderbilt University, Nashville, TN ■ Photonic Devices and Integrated Circuits Chair: Christina Howe, University of Evansville, Evansville, IN “The NSREC 2009 Technical ■ Hardness Assurance Program Committee has assembled Chair: Craig Hafer, Aeroflex Colorado Springs, Colorado Springs, CO an outstanding program that will ■ Dosimetry provide information on the latest Chair: Gyorgy Vizkelethy, Sandia National Laboratories, Albuquerque, NM developments in the field of nuclear ■ Hardening By Design and space radiation effects. We invite Chair: Lawrence Clark, Arizona State University, Phoenix, AZ you to participate in this interna- ■ tional forum to learn about these new Space and Terrestrial Environments developments and take advantage of Chair: Gregory Ginet, Air Force Research Laboratory, Hanscom AFB, MA the opportunity to interact with the ■ Single-Event Effects: Devices and Integrated Circuits technical leaders in this area.” Chair: Fernanda Kastensmidt, UFRGS, Brazil Lew Cohn, NRL Technical Program Chairman

Poster session Those papers that can be presented more effectively in a visual format with group discussion will be displayed in the Poster Session on Tuesday through Friday in the Porte St-Louis, Porte Kent and Porte du Palais rooms. The formal Poster Session will be held on Wednesday from 2:35 to 5:00 PM and the authors will be available at that time to discuss their work. The Poster Session is chaired by Steve McClure of JPL, Pasadena, CA.

Radiation effects Workshop papers provide piece part and materials radiation response data and radia- Data workshop tion test facilities technical information. The intent of the workshop is to provide data and facilities information to support design and radiation testing activities. Workshop papers can be viewed Tuesday afternoon through Friday morning in the Porte St-Louis, Porte Kent and Porte du Palais rooms. Authors will be available on Thursday to discuss their work from 2:30 to 4:45 PM. A copy of the workshop paper will be mailed to all registered conference attendees. The workshop chair is Sarah Armstrong, NAVSEA Crane/Vanderbilt, Crane, IN.

Invited Speakers There will be three invited talks that consist of: ■ Québec: World Heritage City Barry Lane, Canadian Cultural Landscapes ■ Combating Cyber Crime: A New Canadian Cyber Forensic Organization Created to Fight Cyber Crime Mourad Debbabi, Concordia University ■ The Road that Walks, A History of Travel on the St. Lawrence River David Mendel, Canadian Cultural Landscapes

Late-news Papers A limited number of late news papers will be accepted and included in the Poster Session and the Radiation Effects Data Workshop. The deadline for submission is June 1, 2009. Detailed instructions for submitting a late-news summary are available on the NSREC Web site at www.nsrec.com.

10 TechnicalTechnical ProgramProgram TuesdayTuesday

MultiPurpose Hall 2000A and 2000B 8:30 AM OPENING REMARKS Mark Hopkins, The Aerospace Corporation, General Chairman

8:35 AM AWARDS PRESENTATION Tim Oldham, Perot Systems/GSFC, Radiation Effects Steering Group Chairman

9:05 AM TECHNICAL SESSION OPENING REMARKS Lew Cohn, NRL, Technical Program Chairman

Session A Single-Event Effects: Mechanisms and Modeling 9:10 AM Session Introduction Chair: Vincent Pouget, IMS-CNRS

A-1 Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales 9:15 AM Single Event Phenomena Predictive Platform (MUSCA SEP3) G. Hubert, S. Duzellier, C. Inguimbert, Onera; C. Boatella-Polo, F. Bezerra, R. Ecoffet, CNES

The Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP3) is presented. This platform is dedicated for prediction SEE cross sections and rates and evaluated thanks to on-board operational results from the ICARE experiment.

A-2 Device-Physics-Based Analytical Model for Single Event Transients in SOI 9:30 AM CMOS Logics D. Kobayashi, K. Hirose, H. Ikeda, JAXA; T. Makino, Graduate University for Advanced Studies Japan; V. Ferlet-Cavrois, M. Gaillardin, CEA/DIF; D. McMorrow, Naval Research Laboratory; Y. Arai, KEK, M. Ohno, OKI Semiconductor

An analytical model is developed to calculate the SET pulse widths in advanced SOI CMOS logics as a function of the irradiation and device parameters. Results are compared with simulations and pulsed laser irradiation tests.

A-3 Single Event Transient Pulse Quenching in 130 nm CMOS Logic 9:45 AM J. R. Ahlbin, B. L. Bhuva, M. J. Gadlage, L. W. Massengill, Vanderbilt University; B. Narasimham, Broadcom Corp.; P. H. Eaton, Micro-RDC

Broadbeam data on 130 nm CMOS show anomalously-short SET pulse widths. 3D TCAD mixed-mode has identified a mechanism for simultaneous charge collection on proximal circuit nodes causing propagating SETs to be truncated or “quenched”.

A-4 The Random Telegraph Signal Behavior of Intermittently Stuck Bits in 10:00 AM SDRAMs A. M. Chugg, A. J. Burnell, S. Parker, MBDA

Intermittently stuck bits in SDRAMs are reported and attributed to the same single particle displacement damage complexes, which cause RTS behavior in CCD hot pixels. This confirms SDRAM stuck bits are unrelated to microdose.

10:15 – 10:45 AM BREAK MultiPurpose Hall 2000C and 2000D

11 TechnicalTechnical ProgramProgram TuesdayTuesday

A-5 Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process 10:45 AM O. A. Amusan, M. C. Casey, B. L. Bhuva, M. Gadlage, Lloyd Massengill, Vanderbilt University; D. McMorrow, J. Melinger, Naval Research Laboratory

Laser interrogation of charge collection circuits fabricated in the IBM 90 nm bulk CMOS process were performed to provide the first direct verification of charge sharing effect and show the nodal spacing dependence of charge sharing.

A-6 A Mechanism Versus SEU Impact Analysis of Collector Charge Collection 11:00 AM in SiGe HBT Current Mode Logic T. Zhang, X. Wei, G. Niu, Auburn University; J. D. Cressler, Georgia Tech; P. W. Marshall, Consultant, NASA; R. A. Reed, Vanderbilt University

This work examines the individual contributions of CB and CS junction charge collection to SEU in SiGe HBT ECL circuit. The CB and CS drift charge collections are primarily responsible for SEU.

A-7 Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs 11:15 AM J. A. Pellish, K. LaBel, NASA Goddard; R. A. Reed, M. L. Alles, R. D. Schrimpf, Vanderbilt University; D. McMorrow, Naval Research Laboratory; G. Vizkelethy, P. E. Dodd, Sandia National Laboratories; V. Ferlet-Cavrois, J. Baggio, P. Paillet, O. Duhamel, CEA/DIF

SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

A-8 Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate 11:30 AM Predictions B. D. Sierawski, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. H. Mendenhall, Vanderbilt University; M. A. Xapsos, NASA Goddard; R. C. Baumann, X. Deng, Texas Instruments

The single-event upset cross section due to direct ionization from protons for a 65 nm bulk CMOS SRAM is reported. The implications for ground-based testing and on- orbit predictions are discussed.

A-9 Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI 11:45 AM Devices Using Realistic C4 And 3D BEOL Geometries H. H. K. Tang, C. E. Murray, G. Fiorenza, K. P. Rodbell, IBM

Novel techniques have been applied to model realistic alpha source distributions in complex BEOL structures. Rigorous simulations of charge collection in SOI test devices of 45 nm technologies reveal soft fail sensitivity to source topologies.

A-10 Criteria for the Use of Advanced Physical Modeling for Rate Prediction of 12:00 PM Single Event Effects in Microelectronics R. A. Weller, R. A. Reed, K. M. Warren, M. H. Mendenhall, B. D. Sierawski, R. D. Schrimpf, L. W. Massengill, Vanderbilt University

We present criteria derived from multiple devices and technologies that are useful in identifying situations where RPP rate predications of SEE are probably not conserva- tive and should be augmented or replaced by advanced physical modeling.

12 TechnicalTechnical ProgramProgram TuesdayTuesday

Poster papers PA-1 Significance of Strike Model in Circuit-Level Prediction of Charge-Sharing SETs A. M. Francis, J. Holmes, Lynguent, Inc.; D. Dimitrov, H. A. Mantooth, University of Arkansas; J. Kauppila, A. Sternberg, M. L. Alles, Vanderbilt University

When evaluating sub-100 nm circuits for hardness to SETs, the choice of strike model is shown to have a notable effect on observed upsets. Bias-dependent models are shown to more accurately predict physical observations.

PA-2 Temperature Characterization of Digital Single Event Transients in a Bulk and Fully Depleted SOI Technology M. J. Gadlage, J. R. Ahlbin, V. Ramachandran, C. A. Dinkins, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, Vanderbilt University; R. L. Shuler, University of Arkansas

SET pulse-width measurements performed over a wide temperature range in a bulk and fully-depleted SOI process show an increase in pulse-width with temperature for the bulk process, but not for the SOI.

PA-3 The Re-Convergence’s Effect to SER Estimation in Combinational Circuits S. Chen, B. Liu, National University of Defense Technology

Re-convergence’s effect to SER estimation in combinational logic is studied. Results show that re-convergence introduces significant errors in previous independent pulse methods. Furthermore this error gets larger with feature size scales down.

PA-4 Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for Circuit-Level Hardened Devices K. M. Warren, A. L. Sternberg, J. D. Black, R. A. Weller, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, Vanderbilt University

The MRED software suite is used to demonstrate that heavy ion irradiation over the maximum possible range of solid angles, regardless of operating frequency, is required to properly quantify the on-orbit SEU rate.

PA-5 The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients (SETs) in Analog Devices D. K. Chen, A. M. Phan, H. S. Kim, MEI Technology; S. P. Buchner, Perot Systems Government Services; K. A. LaBel, NASA Goddard

We present results of laser-induced analog SETs at elevated temperatures. We found increases in pulse width and enhanced degradations to the slew-rate at elevated temperature, which have critical implications for radiation hardness assurance.

PA-6 Flip-Flop Upsets from Single-Event-Transients in 65 nm Clock Circuits L. Wissel, IBM Systems and Technology; D. F. Heidel, M. S. Gordon, K. P. Rodbell, K. Stawiasz, IBM Research Division; E. H. Cannon, The Boeing Company

This paper describes upsets of 65 nm flip-flops caused by Single-Event Transients (SETs) in clock-tree circuits. The upset rate is modeled and compared to measurements with 15 MeV carbon ions and 148 MeV protons.

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PA-7 A Bias Dependent Single-Event Compact Model Implemented into BSIM4 and a 90 nm CMOS Process Design Kit J. S. Kauppila, A. L. Sternberg, M. L. Alles, O. A. Amusan, Vanderbilt University; M. Francis, J. Holmes, Lynguent, Inc.

A single-event model capable of capturing bias dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process design kit. Simulation comparisons with mixed mode TCAD are presented.

PA-8 The Effect of Nuclear Fragmentation Model Selection on Single Event Prediction M. A. Clemens, N. A. Dodds, R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, Vanderbilt University

Previous validations for nuclear fragmentation simulations are shown to be insuf- ficient to support application for SEE analysis. Energy deposition simulations using Geant4-based nuclear physics models implemented in the MRED tool are compared to experiment.

PA-9 Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS P. W. Tuinenga, L. W. Massengill, Vanderbilt University

Propagation characteristics of SET pulses are modeled using circuit simulation by including parasitic elements from the process. Recently observed SET signatures in SOI and bulk CMOS are explained in terms of layout considerations.

12:15 – 1:45 PM LUNCH

Session B Basic Mechanisms of Radiation Effects 1:45 PM Session Introduction Chair: Peter Truscott, Qinetiq

B-1 Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors with 1:50 PM Nitrided Gate Oxide R. Arora, J. Rozen, D. M. Fleetwood, K. F. Galloway, R. D. Schrimpf, Vanderbilt University; J. Han, S. Dimitrijev, Griffith University; L. C. Feldman, Rutgers State University

The ionizing radiation responses of 3C- and 4H-SiC MOS capacitors are investigated. 3C-SiC capacitors trap more charge than 4H-SiC capacitors. NO is a more effective nitridation treatment than N2O for each polytype.

B-2 Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN 2:05 PM HEMTs A. Kalavagunta, M. Beck, R. Schrimpf, R. Reed, S. Dixit, Vanderbilt University; M. Silvestri, Università di Padova, L. Shen, U. K. Mishra, University of California-Santa Barbara

We examine the mechanisms responsible for the bulk defect-induced increase in GaN HEMT gate lag. The relationship between charged defects and the increased gate lag is quantified using experiments and simulations.

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B-3 Modeling the Dose Rate Response and the Effect of Hydrogen in Bipolar 2:20 PM Technologies X. J. Chen, H. J. Barnaby, B. Vermeire, K. E. Holbert, Arizona State University; P. Adell, Jet Propulsion Laboratory; R. L. Pease, RLP Research

Dose rate response in bipolar technologies is modeled using a combination of space charge and competing reaction mechanisms. Preliminary results confirmed the complex relationship between dose rate, hydrogen, and interface-trap formation.

B-4 Laser-Induced Current Transients in Strained-Si Diodes 2:35 PM H. Park, D. Cummings, T. Nishida, M. E. Law, S. E. Thompson, U. Roh, University of Florida; R. Arora, R. A. Reed, R. D. Schrimpf, Vanderbilt University; S. A. Armstrong, NAVSEA Crane/Vanderbilt; J. A. Pellish, NASA Goddard; D. McMorrow, Naval Research Laboratory

The laser-induced transients in silicon diodes under controlled external mechanical stress applied via a four point bending jig are measured and simulated in TCAD. The transients are characterized as a function of mechanical stress.

B-5 The Role of Ion-Induced Displacement Damage in Single-Event Gate 2:50 PM Rupture M. J. Beck, Y. S. Puzyrev, N. Sergueev, K. Varga, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, Vanderbilt University

Quantum mechanical and percolation calculations demonstrate that, even for low- energy recoils caused by a single ion, ion-induced defects provide a conducting path in oxides and can account quantitatively for single-event gate rupture.

POSTER PAPERS PB-1 Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs S. Onoda, N. Iwamoto, T. Ohshima, Japan Atomic Energy Agency, K. Kawano, The University of Electro-Communications; S. Ono, S. Katakami, M. Arai, New Japan Radio Co., Ltd

A transient current following 15 MeV-O ion incidence was measured for 4H-SiC Metal Semiconductor Field Effect Transistor (MESFET). The collected charge was several orders of magnitudes higher than the charge induced by direct ionization.

PB-2 The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN Heterostructure Field Effect Transistors J. W. McClory, J. T. Moran, J. C. Petrosky, Air Force Institute of Technology; G. C. Farlow, Wright State University

AlGaN/GaN HFETs were electron irradiated at ~80 K. Temperature dependent changes to the leakage and transistor currents were compared to theory. The results are consistent with defects in AlGaN that become active at low temperature.

PB-3 Electron Nonionizing Energy Loss (NIEL) for Device Applications W. Kim, I. Jun, R. Evans, Jet Propulsion Laboratory

The electron induced nonionizing energy loss (NIEL) for representative device and detector materials are presented here. The electron NIELs are computed analytically using the Lindhard partition function and the Mott differential cross section.

15 TechnicalTechnical ProgramProgram TuesdayTuesday

3:05 PM – 3:35 PM BREAK MultiPurpose Hall 2000C and 2000D

SESSION C Radiation Effects in Devices and Integrated Circuits 3:35 PM Session Introduction Chair: Mike Alles, Vanderbilt University

C-1 Fin-Width Dependence of Ionizing Radiation-Induced Degradation in 3:40 PM 100-nm Gate Length FinFETs F. El Mamouni, R. D. Schrimpf, R. A. Reed, Vanderbilt University; S. Cristoloveanu, IMEP-INP; W. Xiong, Texas Instruments

The dependence of threshold-voltage and subthreshold-swing degradation on fin‑width in irradiated 100-nm gate-length FinFETs is reported. For these highly scaled devices, degradation decreases with fin width.

C-2 The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation 3:55 PM Damage of 65 Nm RF-CMOS on SOI A. Madan, S. D. Phillips, E. P. Wilcox, J. D. Cressler, George Tech; P. W. Marshall, Consultant, NASA; P. F. Cheng, L. Del Castillo, Jet Propulsion Laboratory; Q. Liang, G. Freeman, IBM Microelectronics

Ionizing radiation damage mechanism in multi-finger RF-CMOS devices is investigated for the first time. In 65 nm CMOS on SOI, strong dependence on STI sidewall but not at BOX interface, is observed and investigated.

C-3 Modeling Ionizing Radiation Effects in Shallow Trench Isolation Field 4:10 PM Oxide FETs M. L. McLain, H. J. Barnaby, K. E. Holbert, Arizona State University

A method through which defect distributions in radiation sensitive STI oxides are deterministically predicted, integrated into implicit surface potential equations, and then inserted into standard equations to model radiation-induced leakage current is discussed.

C-4 Effect of Total Ionizing Dose on Combinational Logic Circuits Operating 4:25 PM at Ultra-Low Power M. C. Casey, J. R. Ahlbin, R. Arora, S. A. Francis, B. L. Bhuva, L. W. Massengill, Vanderbilt University; S. A. Armstrong, NAVSEA Crane/Vanderbilt; D. McMorrow, H. L. Hughes, P. J. McMarr, J. S. Melinger, Naval Research Laboratory

X-ray experiments show an increase in frequency in ultra-low power circuits with increasing total dose. Colbalt-60 and laser experiments show the single-event susceptibility increases with total dose exposure in subtreshold region.

C-5 Error Instability in Floating Gate Flash Memories Exposed to TID 4:40 PM M. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, Università di Padova; A. Visconti, M. Bonanomi, S. Beltrami, Numonyx

We discuss the annealing of Floating Gate errors in Flash memories exposed to TID. We analyze the phenomenon, linking the reduction of the errors to the threshold voltage shifts of the single cells.

16 TechnicalTechnical ProgramProgram TuesdayTuesday

Poster papers PC-1 Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor B. L. Draper, M. Okandan, M. Shaneyfelt, Sandia National Laboratories

Gate-all-around MOSFETs were fabricated from single-crystal silicon nanowires only 500 angstroms across. Total dose degradation was larger than expected and is attrib- utable to thicker gate oxide grown on non-(100) Si surfaces.

PC-2 Effects of Radiation Exposure on the Endurance of Commercial NAND Flash Memories T. R. Oldham, Perot Systems/GSFC; M. R. Friendlich, M. A. Carts, C. M. Seidleck, MEI, Inc.; K. A. LaBel, NASA Goddard

We have compared the endurance of irradiated commercial NAND flash memories with unirradiated controls. Radiation exposure has little or no effect on the endurance of flash memories. Results are discussed in light of relevant models.

PC-3 Comparison of Circuit Response under Heavy Ion Irradiation with the Compact Model Circuit Simulator Xyce E. Bielejec, G. Vizkelethy, C. Hembree, J. C. Banks, D. B. King, Sandia National Laboratories

We report on a comparison of experimentally observed circuit irradiation effects and those predicted by the displacement damage and photocurrent aware compact model circuit simulator Xyce. We find excellent agreement between experiment and simulation.

PC-4 A Statistical Approach to Microdose Induced Degradation in FinFET Devices A. Griffoni, S. Gerardin, A. Ruzza, G. Meneghesso, A. Paccagnella, Università di Padova; P. J. Roussel, E. Simoen, C. Claeys, IMEC

We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and multiple ion hits.

PC-5 Circuit Independent Behavioral Modeling of TID Degradation of Voltage Feedback Operational-Amplifiers S. Jagannathan, D. R. Herbison, W. T. Holman, L. W. Massengill, Vanderbilt University

A generic modeling technique is described to create TID aware behavioral models of voltage feedback opamps without creation of underlying SPICE micromodel. The model accurately predicts board level designs’ TID response without expensive fabrication runs.

PC-6 The Effects of STI Topology and Sidewall Doping on Radiation-Induced Leakage Current N. Rezzak, M. L. Alles, R. D. Schrimpf, L. W. Massengill, Vanderbilt University; S. Kalemeris, Northwestern University; H. J. Barnaby, Arizona State University

The sensitivity of radiation-induced leakage current to shallow trench isolation topology in 90-nm NMOSFETs is examined. The amount of recess at the STI/active edge transition significantly affects the TID sensitivity.

17 TechnicalTechnical ProgramProgram TuesdayTuesday

PC-7 A TID Tolerant, Low Jitter, Wide-Band Phase-Locked Loop in 0.25 µm CMOS Silicon-on-Sapphire Technology P. Zhu, W. Chen, P. Gui, Southern Methodist University; D. Wu, Texas Instruments, S. Jung, University of Texas at Arlington

This paper describes the design, analysis, and measurements of a TID-tolerant, wide- band, and low-jitter LCPLL in 0.25 µm SOS CMOS technology. Comparison with a self-biased PLL demonstrates its superior TID tolerance.

4:55 PM End of Tuesday Sessions

18 TechnicalTechnical ProgramProgram WednesdayWednesday

MultiPurpose Hall 2000A and 2000B Invited Talk Québec: World Heritage City 8:30 – 9:40 am Barry Lane, Canadian Cultural Landscapes

With its fortification walls, narrow winding streets and historic buildings, Québec is renowned for its beauty and history. In 1985, Québec became the first city on the continent to be placed on the World Heritage List of UNESCO. Besieged six times in its history, Québec was finally conquered by the English in the Battle of the Plains of Abraham in 1759. Capital of New France, then capital of British North America, Québec is, today, the heart of French culture in North America. This presentation, which provides a colorful and entertaining introduction to the city’s dramatic history, is richly illustrated with historic maps, illustrations and photographs.

Barry Lane is a co-founder of Canadian Cultural Landscapes, a company dedicated to the planning and organizing of educational tour packages, for American alumni groups traveling to Canada and the northeastern United States. The company has been in operation since 1983. Barry leads and lectures to many of these travel groups and is renowned for his ability to bring history alive for groups of all walks of life. Having created over 80 different power point presentations on the history of Canada, Québec, and the United States, Barry has a unique perspective on both countries, and is often called upon to explain Canadian life and issues to Americans traveling to Canada. Barry Lane was born in Regina, Saskatchewan, and studied Canadian history at the Royal Military College of Canada in Kingston, Ontario. He later served as a commissioned officer in the Canadian Army, and was attached in 1977-78, to the United Nations Emergency Force, Sinai, at its headquarters on the Suez Canal in Egypt. In 1982, he received a second degree from Laval University in Québec City. In Paris, in 1991, he was awarded the Antoine de Saint-Exupéry prize for his book, Ce jour-là en Nouvelle-France. This award is given to the author of the best children’s book published in the French language, outside of France.

Session D Photonic Devices and Integrated Circuits 9:40 AM Session Introduction Chair: Christina Howe, University of Evansville

D-1 Radiation Effects on Yb- and Yb/Er-Doped Double-Clad Optical Fibers 9:45 AM S. Girard, C. Marcandella, P. Paillet, V. Ferlet-Cavrois, J. Baggio, CEA/DIF; Y. Ouerdane, B. Tortech, A. Boukenter, J.-P. Meunier, Hubert Curien; T. Robin, B. Cadier, Ixfiber; J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, Sandia National Laboratories; E. W. Blackmore, TRIUMF

We characterized using different spectroscopic techniques (absorption, luminescence) the radiation response of Ytterbium and Ytterbium/Erbium doped fibers exposed to protons, X-rays, and gamma-rays. Origins of their degradation during irradiation are discussed.

D-2 Radiation Effects and Annealing Studies in Amorphous Silicon Solar Cells 10:00 AM J. R. Srour, J. W. Palko, S. H. Liu, J. C. Nocerino, Aerospace Corporation

Radiation effects and annealing studies are presented for amorphous silicon solar cells from three manufacturers. Data scale well with ionizing dose for proton, photon, and electron irradiation. Significant long-term annealing occurs at room temperature.

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D-3 Radiation Effects in Type-Two Antimonide Superlattice Infrared Detectors 10:15 AM B. D. Weaver, E. A. Aifer, Naval Research Laboratory

One-MeV proton irradiation of antimonide superlattice infrared detectors intended for use in space decreases the quantum efficiency, increases leakage and decreases the activation energy for carrier diffusion. Still, the devices show high radiation tolerance.

Poster papers PD-1 Radiation Resistance Evaluation of Femtosecond Fiber Bragg Gratings B. Brichard, A. Gusarov, SCK•CEN; S. Mihailov, D. Grobnic, C. Smelser, CRC

We irradiated with gamma-rays Fiber Bragg gratings imprinted in Ge and pure silica fibers using femtosecond lasers. Results show a good radiation resistance of those gratings with a small radiation induced Bragg wavelength shift.

PD-2 Modeling the Effects of Electron Radiation in Solar Cells using Silvaco’s ATLAS Software S. Michael, Naval Postgraduate School

Solar Cells irradiated with electrons over various fluence levels were modeled for the first time using Silvaco’s Virtual Wafer Fabrication software. The two dimensional model accurately depicts the experimental results of the physical cells.

10:30 AM – 11:00 AM BREAK MultiPurpose Hall 2000C and 2000D

Session E Hardness Assurance 11:00 AM Session Introduction Chair: Craig Hafer, Aeroflex Colorado Springs

E-1 Optocouplers: Fundamentals and Hardness Assurance 11:05 AM A. H. Johnston, R. D. Harris, T. F. Miyahira, Jet Propulsion Laboratory

Hardness assurance for optocouplers is discussed, emphasizing photo detector and amplifier effects. Damage is super linear with fluence, increasing the impact of mar- ginal devices on circuit failure. An example of failure in an operational spacecraft is included.

E-2 Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs 11:20 AM P. Cheng, S. Phillips, E. Wilcox, T. Thrivikraman, L. Najafizadeh, J. D. Cressler, Georgia Tech; P. W. Marshall, Consultant, NASA

We investigate the applicability of current test protocols of advanced technologies. In SiGe HBTs, an unexpected excess collector current is observed during TID. We investigate this phenomenon and importance in hardness assurance in SiGe components.

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E-3 Irradiation with Molecular Hydrogen as an Accelerated Hardness 11:35 AM Assurance Test Method P. C. Adell, B. G. Rax, S. S. McClure, Jet Propulsion Laboratory; H. J. Barnaby, C. X. Jie, Arizona State University; R. L. Pease, RLP Research

High dose rate irradiation with hydrogen stress is proposed as an accelerated test method. Data obtained with such a method could rapidly establish an upper bound to the low dose rate response in space.

E-4 TPA Laser and Heavy-Ion SEE Testing: Complementary Techniques for 11:50 AM SDRAM Single-Event Evaluation R. L. Ladbury, K. LaBel, A. B. Sanders, NASA Goddard; J. Benedetto, Radiation Assured Devices; D. McMorrow, Naval Research Laboratory; S. P. Buchner, Perot Systems; M. D. Berg, M. R. Friendlich, A. M. Phan, H. S. Kim, MEI Technology

We report on complementary use of TPA laser and heavy-ion SEE testing to evaluate the single-event response of SDRAMS. The tandem testing technique helps disen- tangle the response of devices exhibiting multiple SEE modes.

Poster papers PE-1 A New Ray Tracing Deposited Dose Calculation Method for Space Applications P. Calvel, Thales Alenia Space; C. Chatry, TRAD

A new Ray Tracing method, called RTEL, has been developed, in order to improve the accuracy of ray tracing methods. Deposited dose calculations are performed, and extremely good accurate approximation results are obtained.

PE-2 Development of a Versatile Test Platform for Single Event Effect (SEE) Characterization of Analog, Digital and Mixed-Signal Integrated Circuits (ICs) N. Valsecchi, E. Gloutnay, T. Pellerin, J.-F. Cusson, S. Lafrance, J. Hardy, G. Brassard, Canadian Space Agency

This paper describes a versatile test platform developed by the Canadian Space Agency, relying on a configurable Digital Comparator and Analog Multitrig Unit, aimed at detecting and counting SEEs for a variety of electronic devices.

PE-3 The Use of Dose-Rate Switching Experiments to Characterize Bipolar Devices J. Boch, Y. Gonzalez, Velo; F. Saigné, N. J.-H. Roche, J.-R. Vaillé, L. Dusseau, Université Montpellier 2; R. D. Schrimpf, Vanderbilt University; C. Chatry, TRAD; E. Lorfèvre, R. Ecoffet, CNES

As an accelerated test technique, a new approach based on dose-rate switching experiments has been proposed to characterize bipolar devices. The foundations of this approach are detailed and guidelines for its use are given.

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PE-4 Statistical Model Selection for TID Hardness Assurance R. L. Ladbury, NASA Goddard; J. L. Gorelick, Consultant; S. S. McClure, Jet Propulsion Laboratory

We investigate model dependence of bounding estimates of TID degradation as a function of sample size and statistical model and develop a method for selecting the model with greatest predictive power.

PE-5 ELDRS Characterization for Very High Dose Missions R. D. Harris, S. S. McClure, B. G. Rax, A. J. Kenna, D. O. Thorbourn, Jet Propulsion Laboratory

A methodology for ELDRS characterization of bipolar parts for mission doses up to 1 Mrad is evaluated. The use of dose rate trend data and enhancement factors to predict LDR performance is called into question.

12:05 – 1:30 PM LUNCH

Session F Dosimetry 1:30 PM Session Introduction Chair: Gorgy Vizkelethy, Sandia National Laboratories

F-1 The Dosimetric Accuracy of RADFET Oxides; Charge Growth and Room 1:35 PM Temperature Fade over Very Long Periods A. Holmes-Siedle, REM Oxford Ltd; J. Mills, University Hospital; F. Ravotti, M. Glaser, CERN

A RADFET is a MOSFET which measures radiation dose. Accuracy data are given for charge growth vs. dose in thick gate oxides. Data on “fade”, observed over a 35 year annealing period, are reported.

F-2 Heavy-Ion Induced Charge Yield and Dosimetry Issues in MOSFETs 1:50 PM A. Javanainen, A. Virtanen, University of Jyväskylä; J. R. Schwank, M. R. Shaneyfelt, S. M. Dalton, Sandia National Laboratories; R. Harboe-Sorensen, European Space Agency

Heavy-ion induced electron/hole charge yield in MOSFETs was determined versus electric field for a range of ions. The effects of charge yield on dosimetry and hardness assurance testing related issues are discussed.

F-3 An Embeddable SOI Radiation Sensor 2:05 PM M. R. Shaneyfelt, T. A. Hill, J. R. Schwank, R. S. Flores, T. M. Gurrieri, P. E. Dodd, S. M. Dalton, Sandia National Laboratories

An embeddable SOI buried oxide MOS dosimeter is developed. Data show only a small dose rate dependence and less than a 10% fade of the dosimeter’s output characteristics when irradiated with all pins shorted.

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F-4 Radiation Effects Studies with Ion Photon Emission Microscopy 2:20 PM J. V. Branson, G. Vizkelethy, K. Hattar, B. L. Doyle, P. Ross, Sandia National Laboratories; M. A. McMahan, Lawrence Berkeley National Labs

A new method to perform Radiation Effects Microscopy using unfocused cyclotron beams has been developed using an Ion Photon Emission Microscope. The first results of the IPEM installed on the LBNL cyclotron will be presented.

POSTER PAPERS PF-1 An Evaluation of an Ultra-Low Background Alpha Particle Counter M. S. Gordon, K. P. Rodbell, D. F. Heidel, IBM, TJ Watson Research Center; B.-D. McNally, W. K. Warburten, XIA LLC

XIA has provided IBM with a prototype ultra-low background alpha particle counter for evaluation. Presented results show significant improvement in background compared to other commercial counters allowing for rapid measurement of low- emissivity materials.

PF-2 Investigations of the Energy Response of RADFET on High Energy Photons, Protons and Neutrons M. Wind, P. Beck, Austrian Research Centers - ARC; A. B. Jaksic, Tyndall National Institute

We investigate the energy response of RADFET on high energy photons, protons and neutrons with Monte Carlo simulation methods. We combine Monte Carlo and TCAD simulations of RADFET photon exposure and compare with measurements.

PF-3 Dosimetry of Intensive, Pulsed Synchrotron X-Ray Microbeams M. L. F. Lerch, A. Cullen, A. M. Baloglow, M. Petasecca, A. B. Rosenfeld, University of Wollongong; M. Reinhard, R. Siegele, D. Prokopovich, Australian Nuclear Science and Technology Organization; E. Brauer-Krisch, H. Requardt, A. Bravin, European Synchrotron Radiation Facility; V. Perevertaylo, SPO-BIT

We report on the dosimetry of the intensive synchrotron X-ray microbeams and compare the resulting radiation damage induced in the n-type and p-type dosimeters from the pulsed, low energy X-ray field.

Poster SESSION INTRODUCTION 2:35 – 5:00 PM Porte St-Louis, Porte Kent and Porte du Palais rooms

Steve McClure, JPL

5:00 PM End of Wednesday Sessions

23 TechnicalTechnical ProgramProgram ThursdayThursday

MultiPurpose Hall 2000A and 2000B Invited Talk Understanding Hardness-by-Design Approaches for Fabricating Rad-Hard 9:00 – 9:30 am Microelectronic Components Ronald C. Lacoe, The Aerospace Corporation

Approaches to fabricating radiation-hardened components at CMOS foundries by the application of novel design techniques will be described. These approaches, referred to as hardness-by-design, can be used to mitigate total dose and single event effects.

Dr. Ronald Lacoe joined The Aerospace Corporation in 1987 as Member of the Technical Staff and is currently a Senior Scientist in the Microelectronics Technology Department. Dr. Lacoe is responsible for research in the areas of microelectronics reliability and radiation hardness for microelectronics that will be employed in Air Force space programs.

Session G Hardening by Design 9:30 AM Session Introduction Chair: Lawrence Clark, Arizona State University

G-1 A Novel Device Architecture for SEU Mitigation: the Inverse-Mode 9:35 AM Cascode SiGe HBT S. D. Phillips, T. Thrivikraman, A. Appaswamy, A. K. Sutton, J. D. Cressler, Georgia Tech; G. Vizkelethy, P. E. Dodd, Sandia National Laboratories; R. Reed, Vanderbilt University; P. W. Marshall, Consultant, NASA

A SiGe HBT device is proposed for SEU mitigation with no area or power dissipation trade-off. Standard structures and one variant are verified for TID and SEU susceptibility using X-rays and ion microprobe.

G-2 Junction Isolation Single Event Radiation Hardening of a 200 GHz 9:50 AM SiGe:C HBT Technology Without Deep Trench Isolation R. M. Diestelhorst, S. Phillips, A. Appaswamy, A. K. Sutton, J. D. Cressler, Georgia Tech; J. A. Pellish, NASA Goddard; R. A. Reed, Vanderbilt University; G. Vizkelethy, Sandia National Laboratories; P. W. Marshall, Consultant, NASA; H. Gusta, B. Heinemann, G. G. Fische, D. Knoll, B. Tillack, IHP

We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trenches against SEE. Substantial reductions in collected charge are demonstrated with no reduction in device performance.

G-3 Design and Validation of a 90 nm Radiation Hardened by Design Standard 10:05 AM Cell Library D. E. Pettit, X. Yao, L. T. Clark, K. E. Holbert, N. D. Hindman, S. Mhambrey, Arizona State University

The design of a radiation hardened standard cell library is described. TID test results using a novel ring oscillator test structure that minimizes the number of IC pins needed shows hardness above 3 Mrad(Si).

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G-4 Application of Transistor Layout-Based RHBD Techniques to SEU 10:20 AM Hardening of Third-Generation SiGe HBT Logic Circuits A. K. Sutton, S. D. Phillips, J. D. Cressler, Georgia Tech; M. A. Carts, Muniz Engineering, P. W. Marshall, Consultant, NASA; D. McMorrow, Naval Research Laboratory; J. A. Pellish, NASA Goddard; R. A. Reed, Vanderbilt University; G. Niu, Auburn University; B. Randall, Mayo Clinic

We report heavy-ion broad-beam results on transistor layout-based RHBD techniques incorporated into SiGe HBT logic blocks, achieving an 83% reduction in saturated cross-section at 4 Gbit/s, with minimal power penalty.

Poster papers PG-1 Total Ionizing Dose Hardened SRAM Cell Design and Experimental Validation X. Yao, L. T. Clark, S. Chellappa, K. E. Holbert, N. Hindman, Arizona State University

A 90 nm RHBD SRAM cell design is presented. Stability, manufacturability, and hardness are experimentally investigated using a 4 kbit SRAM bank. Irradiation increases the standby current less than 10% after 3.2 Mrad(Si).

PG-2 Radiation Hardened by Design Digital I/O for High SEE and TID Immunity K. E. Nielsen, L. T. Clark, K. E. Holbert, Arizona State University

RHBD I/O pads on a 90 nm process using triple redundancy for SEE mitigation with high TID immunity are described. Measurements of standby leakage current after TID irradiation to over 3 Mrad(Si) show negligible increase.

PG-3 Radiation Hardened Memory Cell Study at 90 nm Technology J. J. Fabula, J. de Jong, C. Carmichael, G. Swift, A. Lesea, R. Padovani, Xilinx

A series of 16 different RHBD latches was implemented in a commercial 90 nm process and evaluated for SEU by 3D simulation and by radiation at various angles and rotations. Theoretical and actual results are compared.

10:35 – 11:05 AM BREAK Foyer 2000

Session H Space and Terrestrial Environments 11:05 AM Session Introduction Chair: Gregory Ginet, AFRL

H-1 Advances in Measuring & Modelling the Atmospheric Radiation 11:10 AM Environment C. Dyer, A. Hands, F. Lei, P. Truscott, K. Ryden, P. Morris, QinetiQ; I. Getley, University of New South Wales; L. Bennett, B. Lewis, Royal Military College of Canada

New monitors are performing wide ranging measurements of the atmospheric environment during the current deep solar minimum while the QinetiQ Atmospheric Radiation Model is being extended to include heavy ions. Results and comparisons are presented.

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H-2 A GIOVE Derived Galileo Electron Spectrum and Comparison to Models 11:25 AM B. O. Taylor, C. I. Underwood, University of Surrey; H. D. R. Evans, D. Rodgers, E. Daly, ESA/ESTEC; K. A. Ryden, QinetiQ

Three years of flight data from the radiation monitor payloads on GIOVE-A are presented. An integral electron energy spectrum is derived from GIOVE-A and INTEGRAL/IREM data.

H-3 On-Orbit Radiation Dose Monitoring Using pFET Dosimeter 11:40 AM A. L. Bogorad, J. J. Likar, J. L. Wint, R. Herschitz, Lockheed Martin Space Systems

Measurements demonstrate favorable performance during high dose rate periods and benefits of novel on-spacecraft dosimetry as a supplement to scientific spacecraft data and situational awareness for mass, power, and cost conscious commercial spacecraft.

Poster papers PH-1 Radioactive Nuclei Induced Soft Errors at Ground Level F. Wrobel, F. Saigne, M. Gedion, J. Gasiot, Université Montpellier 2; R. D. Schrimpf, Vanderbilt University

The role of all natural alpha emitters on the SER of integrated circuits is quantified. The impact is given in FIT per mass unit. Secular equilibrium of uranium is simulated by Monte Carlo method.

PH-2 A Technique for Measuring Radiobiological Dose and Neutron Fluxes in Radiation Environments using Silicon Diodes A. Hands, C. Dyer, QinetiQ

Radiation transport codes and multi-facility empirical measurements are used to characterise a solid-state radiation monitor to provide measurements of ambient dose equivalent in an aviation environment and neutron fluxes at accelerated testing facilities.

PH-3 Evaluation of Galactic Cosmic Ray Models J. H. Adams, Jr., NASA Marshall Space Flight Center; S. Heiblim, Rutgers University; C. Malott, Fort Hays State University

Models of the galactic cosmic ray spectra have been tested by comparing their predictions to an evaluated database containing more than 380 measured cosmic ray spectra extending from 1960 to the present.

11:55 – 1:30 PM LUNCH

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Invited Talk Combating Cyber Crime: A New Canadian Cyber Forensic 1:30 – 2:30 Pm Organization Created to Fight Cyber Crime Dr. Mourad Debbabi, Concordia University

This invited talk will discuss a new Canadian initiative to fight Cyber-Crime. Bell Canada, the Competition Bureau of Canada, Concordia University, Rogers Communications and Microsoft Canada Co., are working towards the establishment of the National Cyber Forensics Training Alliance Canada (NCFTA Canada). This new Alliance will be hosted by Concordia University in Montreal. NCFTA Canada will enable and develop partnerships between the public sector, law enforcement agen- cies, the private sector and academic organizations that will reduce the impact of cyber-crime affecting Canadians. NCTFA Canada will combine resources, intelligence, expertise and R&D efforts to effectively and cooperatively work on:

• promoting information security in Canada • investigating mutually defined cyber-crime targets to gather intelligence, define prevention methods, and develop counter-measures • developing and publishing information or processes that will help protect organizations or individuals from cyber-crime • carrying well-focused collaborative research and development initiatives • developing and sharing tools that aid in the investigation or prevention of cyber-crime • building relationships with organizations having similar vision both nation- ally and internationally

Dr. Mourad Debbabi is a Full Professor and the Director of the Concordia Institute for Information Systems Engineering, Concordia University, Montreal, Québec, Canada. He holds the Concordia Research Chair Tier I in Information Systems Security. He is the founder and one of the leaders of the Computer Security Laboratory (CSL) at Concordia University. He is also the Vice President of the National Cyber Forensics Training Alliance NCFTA Canada. He is the Specification Lead of four Standard JAIN (Java Intelligent Networks) Java Specification Requests (JSRs) dedicated to the elaboration of standard specifications for presence and instant messaging. In the past, he served as Senior Scientist at the Panasonic Information and Network Technologies Laboratory, Princeton, New Jersey, USA; Associate Professor at the Computer Science Department of Laval University, Québec, Canada; Senior Scientist at General Electric Research Center, New York, USA; Research Associate at the Computer Science Department of Stanford University, California, USA; and Permanent Researcher at the Bull Corporate Research Center, Paris, France. Dr. Debbabi holds Ph.D. and M.Sc. degrees in computer science from Paris-XI Orsay, University, France. He can be reached at [email protected]. His webpage is at http://www.ciise.concordia.ca/~debbabi

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DATA WORKSHOP INTRODUCTION 2:30 – 4:45 PM Porte St-Louis, Porte Kent and Porte du Palais rooms

Chair: Sarah Armstrong, NAVSEA Crane/Vanderbilt

W-1 Guide to the 2008 IEEE Radiation Effects Data Workshop Record D. M. Hiemstra, MDA Space Missions

The 2008 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.

W-2 Single Event Upset Characterization of the TMS320C6713 Digital Signal Processor Using Proton Irradiation D. M. Hiemstra, MDA Space Missions

The proton induced SEU cross-section of the TMS320C6713 digital signal processors functional blocks are presented. The cross-sections are used to estimate the upset rates in the space radiation environment.

W-3 Single Event Effects in MEMS Accelerometers R. B. Gaillard, P. Poirot, Infoduc; C. Poivey, L. Marchand, ESA; C. Oudea, EADS ASTRIUM ST

We present single event effects, induced by heavy ions and protons, on a MEMS accelerometer. The testing procedure is outlined and the contributions from different parts of the accelerometer are discussed.

W-4 Single Event Effects Tests on the Actel RTAX2000S FPGA J. S. George, R. Koga, M. Zakrzewski, The Aerospace Corporation

We present new single event effects testing results for the RTAX2000S field-programmable-gate-array. We tested sequential and combinational logic structures, input/output blocks, and the embedded RAM with ions and protons.

W-5 Single Event Gate Rupture Testing on 90 nm Bulk CMOS Deep Trench Oxide Capacitors R. K. Lawrence, J. A. Zimmerman, J. F. Ross, BAE Systems

Single event gate rupture (SEGR) testing on a deep trench oxide capacitor used for the reduction of single event upsets in a 90 nm bulk complementary metal oxide semiconductor technology indicates that SEGR was not detected.

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W-6 Soft Error Sensitivities in 90 nm Bulk CMOS SRAMs R. K. Lawrence, J. F. Ross, N. Haddad, D. Albrect, BAE Systems; R. A. Reed, Vanderbilt University; M. A. McMahan-Norris, Lawrence Berkeley National Laboratory

Enhanced single event upset (SEU) sensitivity to low energy protons has been observed in 90 nm bulk complementary metal oxide semiconductor (CMOS) static random access memories (SRAM).

W-7 Compendium of Total Ionizing Dose Radiation Test Results from Ball Aerospace & Technologies Corp. J. M. Bird, R. Davies, , K. Scott, T. Morris, J. Evans, Ball Aerospace & Technologies Corp.; M. Cabanas-Holmen, The Boeing Company

A number of electronics have been tested for sensitivity to total ionizing dose for space applications at Ball Aerospace & Technologies Corp. Test results are presented for optoelectronics, digital, analog, bipolar, and hybrid devices.

W-8 Compendium of Single Event Effects Radiation Test Results from Ball Aerospace & Technologies Corp. J. M. Bird, R. Davies, K. Scott, T. Morris, J. Evans, Ball Aerospace & Technologies Corp.; M. Cabanas-Holmen, The Boeing Company

A number of electronics have been tested for sensitivity to single event effects for space applications at Ball Aerospace & Technologies Corp. Test results are presented for optoelectronics, digital, analog, bipolar, and hybrid devices.

W-9 TID and SEE Response of an Advanced Micron 4G NAND Flash Memory T. R. Oldham, Perot Systems/GSFC; M. R. Friendlich, MEI Technology, Inc.; A. B. Sanders, K. A. LaBel, NASA Goddard

Initial TID and SEE results are presented for an unhardened commercial nonvolatile memory.The parts survive to a total dose of 200 krads. The parts suffer from a high SEFI rate and unexpected destructive failures.

W-10 Synergistic Effects of Total Ionizing Dose on SEU Sensitive SRAMs R. Koga, P. Yu, J. George, M. Zakrzewski, K. Crawford, The Aerospace Corp.

Synergistic effects of total ionizing dose and particle fluence on SEU sensitivity of static random access memories have been investigated. The memory imprint effect has been observed to yield varying results.

W-11 TID and SEE Characterizations of New Bipolar Operational Amplifiers G. Chaumont, B. Cornanguer, P. Briand, C. Prugne, ST Microelectronics; F. Malou, CNES

We present Single Event Effects characterizations and Total Ionizing Dose behaviour up to 300 krad(Si) on two new bipolar operational amplifiers, including ELDRS analysis.

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W-12 Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA M. V. O’Bryan, H. S. Kim, M. J. Campola, M. D. Berg, D. Chen, MEI Technology, Inc.; K. A. LaBel, R. L. Ladbury, J.-M. Lauenstein, A. B. Sanders, NASA Goddard; S. P. Buchner, T. R. Oldham, Perot Systems/GSFC

We present the results of single event effects testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

W-13 Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA D. J. Cochran, M. V. O’Bryan, MEI Technology, Inc.; S. P. Buchner, Perot Systems Government Services; K. A. LaBel, R. L. Ladbury, NASA Goddard

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

W-14 A Radiation Dataset for the NGC W28C0108 SONOS 128 kx8 EEPROM D. A. Adams, M. D. Fitzpatrick, E. C. Folk, N. P. Goldstein, J. J. Horner, W. L. Hand, P. B. Shea, R. D. Lewis, J. T. Smith, P. P. Peyton, Northrop Grumman Corporation; J. J. Sheehy, J. A. Dame, G. L. Grant, AMTEC Corporation; J. R. Murray, Sandia National Laboratories; G. Wang, M. H. White, Lehigh University

A 1 Mb (128 kx8) EEPROM using SONOS (Silicon – Oxide –Nitride - Oxide – Silicon) technology has been designed and fabricated for radiation hardened space applications. This paper summarizes radiation and reliability data taken on this part.

W-15 Radiation Prescreening of SIOS Optical Link Transceivers C. F. Poivey, J. M. Perdigues Armengol, R. Harboe-Sorensen, A. Zadeh, ESA/ESTEC; J. Blasco, O. Navasquillo, S. Delarosa, DAS Photonics

We present radiation data, TID, Displacement Damage Dose, and proton induced Single Event Effects, on the DAS Photonics SIOS optical link transceiver. A SIOS optical link demonstration board will be flown on ALPHASAT spacecraft.

W-16 Trends in Radiation Susceptibility of Commercial DRAMS for Space Systems C. Miller, R. Owen, M. Rose, P. M. Rutt, J. J. Schaefer, I. A. Troxel, SEAKR Engineering

Upset rates for on-orbit COTS DRAM memories are presented and compared to CREME96 predictions for three generations of commercial DRAM technology including 64 Mb EDO DRAM, 128 Mb SDRAM, and 256 Mb.

W-17 Radiation Test Results of Candidate Spacecraft Parts for the Applied Physics Laboratory A. D. Tipton, C. H. Pham, R. H. Maurer, D. R. Roth, Johns Hopkins University Applied Physics Laboratory

The radiation responses of candidate spacecraft digital-to-analog converters (DACs) and digital synthesizers are presented. Candidate electronics are evaluated for total ionizing dose and single event effects.

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W-18 Two Post-Radiation Temperature Testing Techniques for Total Ionizing Dose (TID) M. J. Campola, D. Chen, MEI Technologies, Inc./NASA Goddard

Data have been obtained using two methods that illustrate limitations of cold temperature storage to prevent annealing and responses to post-radiation elevated temperature tests. Radiation testing was done at NASA Goddard’s Co60 Source.

W-19 Low Dose Rate Testing on Commercial Low Dropout Voltage References M. T. Alvarez, J. A. Domínguez, C. Hernando, C. P. Fernández, I. Arruego, INTA

Voltage references suitable for LEO space missions were irradiated at low dose rate by INTA in order to analyze the degradation on reference voltage, supply current and load regulation. Results and conclusions are reported.

W-20 Low Dose Rate Test Results of National Semiconductor’s Bipolar Low Dropout (LD0) Regulators, LM2940 and LM2941 at Dose Rates of 1 and 10 mrad(Si)/s K. Kruckmeyer, T. Trinh, L. McGee, National Semiconductor; J. M. Benedetto, Radiation Assured Devices

Low and high dose rate test results and drift analysis are presented for National Semiconductor’s bipolar LDO regulators, LM2940 and LM2941 at dose rates of 0.001, 0.01 and 170 rad(Si)/s.

W-21 Low Dose Rate Test Results of National Semiconductor’s ELDRS-Free Bipolar Reference, LM136A-2.5 K. Kruckmeyer, L. McGee, B. Brown, L. Miller, National Semiconductor

Low dose rate and high dose rate data and drift calculations are presented for National Semiconductor’s “ELDRS-free” bipolar reference, LM136A-2.5 and compared to data from older versions of the product.

W-22 Effect of Total Ionizing Dose Radiation Hardening on the Single Event Transient (SET) Response of National Semiconductor’s ELDRS-Free LM139 Quad Comparator K. Kruckmeyer, National Semiconductor; S. P. Buchner, Perot Systems Government Services

Heavy ion test results for National Semiconductor’s ELDRS-free LM139 are presented and compared to data from older LM139 versions to determine if the rad hardening process changes have an impact on SET response.

W-23 Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM) R. R. Katti, J. Lintz, L. Sundstrom, Honeywell; T. Marques, S. Scoppettuolo, Charles Stark Draper Laboratories; D. Martin, NAVSEA

An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm2/mg for fluences to 10E8ions/cm2; and TID hardness in excess of 1 Mrad.

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W-24 Sensitivity to LET and Circuit Conditions for SEGR in Vertical Power MOSFETs L. Z. Scheick, L. E. Selva, JPL

The results of recent SEGR testing on power MOSFETS are presented, showing a con- siderable drop in SEGR voltage in comparison to manufacturer data for device ratings over 130 V.

W-25 Development of a Large Area Neutron Beam for System Testing at TRIUMF E. W. Blackmore, TRIUMF

A neutron flood beam has been developed for large electronic system testing. Low intensity protons are stopped in a lead absorber and the quasi-atmospheric spectrum of neutrons produced in the forward direction is utilized.

W-26 A Simplified Vacuumless Faraday Cup for the Experimental Beamline at the Francis H. Burr Proton Therapy Center E. W. Cascio, Francis H. Burr Proton Therapy Center at Massachusetts General Hospital

We describe a simplified, vacuumless, Faraday cup and compare it with a traditional design under various beam conditions. We show that the new design agrees with the traditional design to an accuracy of 1-4%.

W-27 Characterization of the ANITA Neutron Source for Accelerated SEE Testing at the Svedberg Laboratory A. V. Prokofiev, J. Blomgren, Uppsala University; M. Majerle, Nuclear Physics Institute; R. Nolte, S. Röttger, Physikalisch-Technische Bundesanstalt; S. P. Platt, University of Central Lancashire; A. N. Smirnov, V. G. Khlopin Radium Institute

ANITA (Atmospheric-like Neutrons from thIck TArget), a new neutron facility for accelerated testing of components and systems for SEE, has been installed at The Svedberg Laboratory in Uppsala, Sweden. Results of characterization measurements are reported.

4:45 PM End of Thursday Sessions

5:15 – 7:00 PM Radiation Effects Committee Open Meeting MultiPurpose Hall 2000A and 2000B

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MultiPurpose Hall 2000A and 2000B Invited Talk The Road that Walks, A History of Travel on the St. Lawrence River 8:30 – 9:40 am David Mendel, Canadian Cultural Landscapes

The mighty 1,000 mile system of the St. Lawrence River drains North America’s Great Lakes, one of the largest bodies of fresh water in the world. Each day on the St. Lawrence, enormous tides travel over 600 miles up the world’s largest gulf\estu- ary system to battle the outflow of water running downstream from the Great Lakes. The indigenous people who first travelled the river named it the “road that walks,” as they canoed along the river with the help of its vast hydraulic forces. Crucial to Canadian history, this vital East-West axis provided transportation for French Canadian fur traders, the great English wood merchants, and the huge streams of Irish and English immigrants who entered the continent via its waters. This presentation captures the drama and romance of those early days and continues on to the construction of the St. Lawrence Seaway in the 1950s, one of the greatest engineering feats in history.

David Mendel studied at York University in Toronto, and at the University of Paris, before moving to Québec City in 1976. After completing a masters thesis in art history and undertaking doctoral studies at Laval University, he became co-founder of Canadian Cultural Landscapes in 1984. Today he is president of this company, which organizes cultural journeys across Canada for museum groups and alumni organizations. He is often called upon to give talks about the history of Québec for international conferences and has given numerous tours of the city for visiting dignitaries. A resident of Québec’s historic district since 1976, he is very involved in preservation issues. He is President of the Foundation of the Cathedral of the Holy Trinity – the first Anglican Cathedral to have been built outside the British Isles – and a member of the Consulting Committee for Religious Architecture of the City of Québec. He is now completing the first in a series of four books on Québec City and its architecture.

Session I Single-Event Effects: Devices and Integrated Circuits 9:40 AM Session Introduction Chair: Fernanda Kastensmidt, UFRGS

I-1 Development of a Radiation-Hardened Lateral Power MOSFET for 9:45 AM Point‑of-Load Applications P. E. Dodd, M. R. Shaneyfelt, D. Savignon, B. L. Draper, R. W. Young, B. Witcher, S. M. Dalton, Sandia National Laboratories; J. Shen, P. Shea, M. Landowski, University of Central Florida

The radiation response of lateral power MOSFETs in total dose and energetic particle environments is explored. Tradeoffs involved in developing radiation-hardened power MOSFETs for point-of-load applications are studied using experiments and simulations.

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I-2 Analysis and Testing of a Radiation Hardened by Design SerDes 10:00 AM Transmitter Driver in 90 nm CMOS S. A. Armstrong, NAVSEA Crane/Vanderbilt; J. Popp, J. Braatz, The Boeing Company; B. Olson, T. D. Loveless, L. W. Massengill, Vanderbilt University

Analysis and heavy-ion measurement of single event effects in a Radiation-Hard-by- Design 3.125 Gbps SerDes transmitter driver in 90 nm CMOS are described.

I-3 Single Event Transient Response of SiGe Voltage References and Its 10:15 AM Impact on the Performance of Analog and Mixed-Signal Circuits L. Najafizadeh, R. M. Diestelhorst, M. Bellini, S. D. Phillips, P. K. Saha, J. D. Cressler, Georgia Tech; G. Vizkelethy, Sandia National Laboratories; P. W. Marshall, Consultant, NASA

The effects of single event transient response of SiGe voltage references on the performance of a voltage regulator and data converters are investigated through microbeam experiments and circuit simulations. Possible SET mitigation techniques are discussed.

10:30 AM – 11:00 AM BREAK Foyer 2000

I-4 Effects of Ionizing Radiation on Digital Single Event Transients in a 11:00 AM 180‑nm Fully Depleted SOI Process P. M. Gouker, P. Wyatt, C. Keast, MIT Lincoln Laboratory; D. McMorrow, P. McMarr, H. Hughes, Naval Research Laboratory; B. Bhuva, B. Narasimham, M. Gadlage, Vanderbilt University

Effects of ionizing radiation on single event transients are reported for FDSOI technology using experiments and simulations. For charge induced in nFET, transients widen with increased dose because of a reduction in pFET drive current.

I-5 Heavy Ion Induced Digital Single Event Transients in a 180 nm Fully 11:15 AM Depleted SOI Process M. J. Gadlage, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, Vanderbilt University; P. Gouker, MIT Lincoln Laboratory

Heavy-ion induced digital single-event transient measurements are presented for a fully-depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3D TCAD simulations.

I-6 Analysis of Single-Event Transients in Integer-N Frequency Dividers and 11:30 AM Impacts on Phase-Locked Loop Performance T. D. Loveless, B. L. Bhuva, W. T. Holman, B. D. Olson, L. W. Massengill, Vanderbilt University

Single-event-transients are analyzed in integer-N frequency dividers. The probabil- ity of an ion-strike causing phase displacement values on the order of the operating period can be reduced by increasing the division factor.

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I-7 Design and Layout Effects on SET Propagation in ASIC and FPGA 90-nm 11:45 AM Test Structures S. Rezgui, J. McCollum, J. Wang, R. Won, D. D’Silva, E. Chan Tung, F. Hawley, Actel Corporation

SET propagation in 90-nm test structures like ASICs and FPGAs are investigated. Radiation and SET fault injection tests show a clear distortion of the SET pulse-widths related to the structures’ design and layout.

I-8 Use of Laser to Explain Heavy Ions Induced SEFIs in SDRAMs 12:00 PM A. Bougerol, F. Miller, F. Moliere, N. Buard, EADS IW; N. Guibbaud, APTUS; R. Gaillard, Consultant

In this work, thanks to heavy ion and pulsed laser tests performed on a 110 nm 256 Mbits SDRAM, different SEFI types and other logic related radiation effects are studied and explained.

I-9 Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM 12:15 PM D. F. Heidel, K. P. Rodebell, IBM Research; P. W. Marshall, Consultant, NASA; J. A. Pellish, K. A. LaBel, M. A. Xapsos, NASA Goddard; S. E. Rauch, M. C. Hakey, IBM System and Technology Group; J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, Sandia National Laboratory; M. D. Berg, M. R. Friendlich, A. D. Phan, C. M. Seidleck, MEI Technologies

Experimental results are presented on single-event-upsets (SEU) and multiple-bit- upsets (MBU) on a 45 nm SOI SRAM. Results show the SEUs are relatively constant with technology scaling but the MBUs are increasing.

Poster papers PI-1 On the Origin of On-orbit Upset Uncertainties R. D. Morris, Universities Space Research Association; C. C. Foster, Foster Consulting Services; A. Kottas, M. Farah, University of California-Santa Cruz

We propose the uncertainty in the on-orbit upset rate as a quality measure when testing parts. This uncertainty arises from statistical, dosimetry, thickness, model uncertainty, etc. We introduce a framework to study these effects.

PI-2 Clock and Reset Transients in a 90 nm RHBD Single-Core Tilera Processor M. Cabanas-Holmen, E. Cannon, A. Kleinosowski, J. Ballast, J. Killens, J. Socha, The Boeing Company

A complex processor was synthesized using an RHBD cell library and fabricated in a commercial 90 nm CMOS technology. SEE testing revealed transients on the clock and global reset signals. These critical circuits require additional hardening.

PI-3 Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and nor Gates E. H. Cannon, M. Cabanas-Holmen, The Boeing Company

We measure heavy ion and proton-induced SETs in inverters, and nand and nor gates from a 90 nm RHBD library. Nand and nor gates have higher SET cross section and generate wider pulses than inverters.

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PI-4 FPGA System Error Rate Analysis for Harsh Radiation Environments P. Ostler, B. Pratt, M. Wirthlin, Brigham Young University; M. Caffrey, D. Gibelyou, P. Graham, K. Morgan, H. Quinn, Los Alamos National Laboratory

This work addresses the viability of deploying SRAM-based FPGAs into harsh earth- orbit environments and includes FPGA radiation test results in addition to comparison against CREME96 worst-case models for solar particle events.

PI-5 Reliability Concerns with Logical Constants in Xilinx FPGA Designs H. Quinn, Graham; K. S. Morgan, Los Alamos National Laboratory; G. Allen, Jet Propulsion Laboratory , G. Swift, C. W. Tseng, Xilinx; P. Ostler, Brigham Young University

In Xilinx Field Programmable Gate Arrays logical constants, which ground unused inputs and provide constants for designs, are implemented in SEU-susceptible logic. This abstract presents experimental data and mitigation methods for logical constants.

PI-6 Catastrophic Failure in Highly Scaled Commercial Nonvolatile Flash Memories F. Irom, D. N. Nguyen, Jet Propulsion Laboratory; M. Bagatin, G. Cellere, A. Paccagenella, S. Gerardin, Università di Padova

Heavy ion single-event measurements on a Samsung 8 Gb NAND is reported. A new destructive dynamic failure in the high density flash memories is discussed.

PI-7 Single Event Analysis of Pipelined Analog-to-Digital Converter Multi-Bit Stages B. D. Olson, W. T. Holman, B. L. Bhuva, L. W. Massengill, Vanderbilt University

Single-event sensitivity of pipelined ADCs using multi-bit front-end stages is analyzed. Results suggest that multi-bit stages can be as effective as, and more robust than, their 1.5-bit stage counterparts.

PI-8 Single-Event-Transient Analysis of Delay-Locked Loops P. Maillard, T. D. Loveless, W. T. Holman, B. L. Bhuva, L. W. Massengil, Vanderbilt University

This work analyzes the single-event transient (SET) generation in a mixed-signal Delay-Locked Loop (DLL) circuit. The Voltage-Controlled-Delay-Line is identified as the dominant contributor to SET vulnerability of the DLL.

PI-9 Worst-Case Test Conditions for SEGR of Power DMOSFETs S. Liu, M. Zafrani, H. Cao, D. Carrier, P. Sherman, International Rectifier; J. L. Titus, NAVSEA

This paper presents the worst-case test conditions for SEGR of power DMOSFET. Contrary to common belief, the worst-case ion condition for SEGR is not the ion with the deepest penetration depth.

36 TechnicalTechnical ProgramProgram FridayFriday

PI-10 A Study of the Frequency Impact on SEE Sensitiveness in Flash-Based FPGAs L. Sterpone, N. Battezzat, M. Violante, Politecnico di Torino; D. Merodio, C. Poivey, European Space Agency; A. Manuzzato, A. Paccagnella, S. Gerardin, D. Vogrig, Università di Padova

SEE sensitiveness of circuits implemented on Flash-based FPGAs are evaluated with respect to the working frequency and routing paths. Radiation experiments have been performed. Experimental results detail the different contributions of SEUs and SETs.

12:30 PM END OF CONFERENCE

37 RESGRESG NEWSNEWS

NSREC 2009 will be held at the Hilton Québec and Québec City Convention Centre. Québec City is the first city in North America to become a UNESCO World Heritage Site. Founded in 1608, the Old Town encompasses cobblestone streets, cliff-top perch- es and narrow passageways, surrounded by country French architecture. The walled old city has an upper town, called Haute-Ville, and a lower town, called Basse-Ville. Every building was constructed in the attempt to have a view of the beautiful St. Lawrence River. Mark Hopkins and his 2009 conference committee have assembled a strong technical program and social events that will provide frequent opportunities for discussing radiation effects with friends.

Supporters of the conference include the Defense Threat Reduction Agency, Air Force Research Laboratory, Sandia National Laboratories, the Jet Propulsion Laboratory, BAE Systems, Micro-RDC, Honeywell, Boeing, Northrop Grumman, and Aeroflex Colorado Springs.

NSREC 2010 will be held in Denver, Colorado, July 19-23 at the Sheraton Denver Tim Oldham Downtown Hotel. With snowcapped peaks providing a spectacular backdrop, Denver Chairman is as refined as it is laid-back. Located on the 16th Street Pedestrian Mall in the heart of downtown Denver, you will be near lots of great shopping, restaurants, and activities. The conference chair is Joe Benedetto, Radiation Assured Devices. The 2011 NSREC will be held in the J. W. Marriott Hotel in Red Rock, Nevada, and is being chaired by Kay Chesnut Jobe of Boeing. Ken Label, NASA Goddard, will be the chairman of the 2012 conference.

As always, papers presented at the NSREC are eligible for publication in the December issue of the IEEE Transactions on Nuclear Science. This year we will continue the fully electronic submission and review process inaugurated last year. It is particu- larly important for authors to upload their papers prior to the conference for consideration for publication in the December TNS Special Issue. Detailed instructions can be found at www.nsrec.com/editmsg.htm.

Dan Fleetwood Keep visiting our web site at www.nsrec.com for author information, paper submis- Executive Vice Chairman sion details, vendor links, on-line registration, and the latest NSREC information.

IEEE FELLOWS One distinguished member of the radiation effects community was elected to the grade of IEEE Fellow on January 1, 2009.

Dennis Brown, NRL, retired

Dennis’ citation reads, “For technical contributions and leadership that have enhanced the understanding of radiation effects in semiconductor devices and for dedicated guidance of research to ensure survivability of critical microelectronics applications in space.”

38 RESGRESG NEWSNEWS

Richard F. Shea Peter S. Winokur has been awarded the Richard F. Shea Distinguished Member Distinguished Award. His citation for this award is “For outstanding contributions to the leadership Member Award of the IEEE Nuclear and Plasma Sciences Society and the IEEE NPSS Radiation Effects Committee.”

Dr. Winokur received his B.S. degree in Physics from the Cooper Union in 1968 and his M.S. and Ph.D. in Physics from the University of Maryland, in 1971 and 1974 respectively. He is presently a Senior Policy Analyst at the National Nuclear Security Administration in Washington, D.C. Peter was appointed by President Bush in 2006 to serve as a Member of the Defense Nuclear Facilities Safety Board (DNFSB). The Defense Nuclear Facilities Safety Board is an independent federal agency established by Congress in 1988 whose mandate is to provide safety oversight of the nuclear weapons complex operated by the Department of Energy (DOE). Past assignments in Washington include: Senior Policy Analyst, Congressional Affairs, National Nuclear Security Administration, and IEEE Congressional Fellow, Office of Senator Harry Reid, Washington, DC. Peter worked at Sandia National Laboratories, Albuquerque, New Mexico from 1983 – 2000 in a variety of positions the last of which was Manager, Radiation Technology and Assurance Department. Peter was responsible for Sandia’s research and development programs in radiation effects science, technology, and quality assurance for space and military applications. He began his career at Harry Diamond Lab in 1969. He has been active in a variety of IEEE activities. He served has served as Technical and Session Chair for NSREC, was President of NPSS and is currently Chair of NPSS Fellow Evaluation Committee and served on other IEEE conference committees. He is also currently IEEE Chair, TAB Awards & Recognition Committee. Dr. Winokur has been awarded an IEEE Outstanding and Meritorious Paper award 13 times with over 120 published papers. He has received the 2005 Nuclear & Plasma Science Society Merit Award.

IEEE/NPSS Merit Award Dan Fleetwood has been awarded the IEEE/NPSS Merit Award. His citation for this award is “For contributions to the understanding of radiation effects in microelectronic devices and materials.”

Dr. Fleetwood received B.S., M.S., and Ph.D. degrees from Purdue University in 1980, 1981, and 1984. He joined Sandia National Laboratories in 1984 as a Member of the Technical Staff. In 1990, he was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department at Sandia. Dan accepted a position as Professor of Electrical Engineering at Vanderbilt University in 1999, and also holds a secondary appointment as Professor of Physics. In 2001-2003 he served as Associate Dean for Research in the School of Engineering. In 2003 he was named Chairman of Vanderbilt’s Electrical Engineering and Computer Science Department. Dan is author or co-author of more than 330 publications on radiation effects and low frequency noise. He has served the IEEE Nuclear and Space Radiation Effects Conference (NSREC) as Executive Vice-Chairman of the Radiation Effects Steering Group for the IEEE NSREC, as general chair (2004), short course chair and presenter, technical program chair, poster session chair, guest editor, and session chair; he has also been an invited speaker and short course presenter at the RADECS Conference. Dan also was Vice-Chairman for Publications for the RESG, 1994-1997, and Guest Editor of the April 1996 issue of the IEEE Transactions on Nuclear Science on single event effects and the space radiation environment. Dan has received seven outstanding paper awards for the IEEE NSREC, as well as several meritorious conference paper awards. Dan is a Fellow of the IEEE and the APS, and is also one of eight Americans to earn the International Correspondence Chess GrandMaster title (2008).

39 RESGRESG NEWSNEWS

Guest Editors All papers accepted for oral or poster presentation to the technical program will be Fred Sexton eligible for publication in a special issue of the IEEE Transactions on Nuclear Science Vice-Chairman of Publications (December 2009), based on a separate submission of a complete paper. Each paper will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. All papers must be submitted on IEEE Manuscript Central. Instructions for submitting papers can be found at the Conference web site www.nsrec.com. The deadline for submission of papers is the Friday before the Conference (July 17, 2009). Data workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE Transactions on Nuclear Science. This process is managed by the Workshop chairperson.

The review process for papers submitted to the Transactions is managed by a team of editors. To provide consistent reviews of papers throughout the year, this editorial team manages the review process for all radiation effects papers submitted to the Transactions throughout the year. The editorial team consists of a senior editor and six associate editors who are technically knowledgeable in one or more specializa- tions and are experienced in the publication process. If you would like to serve as a reviewer for the December issue of the Transactions or for radiation effects papers submitted throughout the year, please contact one of the editors. The editors for the 2009 NSREC are:

Jim Schwank, Senior Editor Sandia National Laboratories Email: [email protected]

Paul Marshall, Associate Editor Consultant, NASA Email: [email protected]

Dennis Brown, Associate Editor IEEE NPSS Email: [email protected]

Christian Poivey, Associate Editor ESA/ESTEC Email: [email protected]

Ron Pease, Associate Editor RLP Research Email: [email protected]

Sylvain Girard, Associate Editor CEA/DIF Email: [email protected]

Robert Reed, Associate Editor Vanderbilt University Email: [email protected]

40 RESGRESG NEWSNEWS

ARE YOU A Now is the time to join the Institute of Electrical and Electronics Engineers (IEEE) MEMBER OF IEEE? and the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you get to be a member of the largest professional engineering society in the world. About 60% of NSREC attendees are IEEE members. Full membership in IEEE costs $156. NPSS membership is $30. NPSS members receive a free subscription to NPSS News and have an opportunity to purchase a subscription to the IEEE Transactions on Nuclear Science for $65 (print) or $25 (on-line).

NPSS members get to vote in our NSREC elections, held at the annual open meeting on Thursday of the conference. If that is not enough, members receive a significant discount on registration fees for the NSREC and Short Course. With a subscription to IEEE Xplore, members can search and view digital copies of NSREC papers (published since 1988) from an on-line web-based database. What are you waiting for? Apply for membership at http://www.ieee.org or visit the IEEE registration desk.

NSREC PUBLICATIONS NSREC has three publications each year:

■ IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at the NSREC Conference. A six issue/ year subscription is $1140 (only $65 for IEEE/NPSS members).

■ Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semiconductor components. A copy of the Workshop Record is available for $180 ($90 IEEE members).

■ NSREC Short Course Notebook. Published each July, this notebook contains tutorial presentations on the basic physics of radiation effects in circuits and systems. It includes the instructor’s notes and text, given to participants of the annual Radiation Effects Short Course. The Archive of Radiation Effects Short Course Notebooks 1980-2006 is available on CD-ROM for $200 ($160 IEEE members). To obtain individual copies of this CD, please visit http://www.nsrec.com/editor.htm.

A complimentary copy of the 2009 IEEE Radiation Effects Data Workshop Record and the NSREC issue of the IEEE Transactions on Nuclear Science will be mailed to each NSREC technical session attendee. A copy of the NSREC Short Course Notebook will be given to short course attendees in Québec City.

Radiation Effects You are invited to attend the IEEE Radiation Effects Committee’s Annual Open Committee Meeting on Thursday, July 23, from 5:15 – 7:00 PM in the Québec City Convention ANNUAL Open Centre MultiPurpose Hall 2000A and 2000B (where the technical sessions are held). Meeting All conference attendees and spouses are encouraged to attend. We will discuss the 2009 conference and future IEEE Nuclear and Space Radiation Effects Conferences. There will be an election for the Junior Member-at-Large on the Radiation Effects Steering Group. Nominations will be taken from the floor. All IEEE NPSS members present are eligible to vote. Refreshments will be provided.

41 AwardsAwards

2008 NSREC Enhanced Proton and Neutron Induced Degradation and Its Impact on Outstanding Hardness Assurance Testing Conference Paper M. R. Shaneyfelt, J. A. Felix, P. E. Dodd, J. R. Schwank, S. M. Dalton, J. Baggio, Award V. Ferlet-Cavrois, P. Paillet and E. W. Blackmore

2008 Outstanding Key Contributions to the Cross Section of NAND Flash Memories Student Paper Award Irradiated with Heavy Ions M. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, A. Visconti, S. Beltrami, R. Harboe-Sorensen and A. Virtanen

Co-winners for the Compendium of Test Results of Single Event Effects Conducted by the Jet 2008 Outstanding Propulsion Laboratory Data Workshop G. Allen Presentation Award Investigation of the Mechanism of Stuck Bits in High Capacity SDRAMs, by the Jet Propulsion Laboratory L. Scheick, S. Guertin and D. Nguyen

2008 Radiation The 2008 Radiation Effects Award was presented to Mayrant Simmons, RTI, at the Effects Award opening ceremonies of the 2008 conference. Mayrant’s citation reads “For contributions to the dissemination and advancement of radiation effects research associated with hardened systems for space applications.”

2009 Radiation The winner of the 2009 Radiation Effects Award will be announced Tuesday morn- Effects Award ing, July 21. The purpose of the award is to recognize individuals who have had a sustained history of outstanding and innovative technical and/or leadership contributions to the radiation effects community but who may not have been honored by being elected Fellows of the IEEE or receiving other IEEE awards such as a Merit Award, the Shea Award, or an IEEE Medal.

2010 Radiation Nominations are currently being accepted for the 2010 IEEE Nuclear and Plasma Effects Award Sciences Society (NPSS) Radiation Effects Award. The purpose of the award is to recognize individuals who have had a sustained history of outstanding and innovative technical and/or leadership contributions to the radiation effects community. The basis of the award is for individuals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include benchmark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and/or (2) a demonstrated long-term history of outstanding and innovative leadership contributions in support of the radiation effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the professional development of the members of the radiation effects community.

A cash award and plaque will be presented at the 2010 IEEE NSREC, Red Rock, Nevada in July 2010. Nomination forms are available electronically in PDF Format or in Microsoft Word format at www.nsrec.com/nominate.htm. Additional information can be obtained from Philippe Paillet, Member-at-Large for the Radiation Effects Steering Group. Philippe can be reached at 33-169-26-5089 or at [email protected].

42 ConferenceConference InformationInformation

Conference Location On Parliament Hill, the Hilton Québec hotel stands guard over the heritage and charm of Canada’s oldest city. Located across the street from the Old City, with indoor access to the Québec City Convention Centre and Place Québec shops, the Hilton Québec hotel is also just steps away from all major tourist attractions and festivals.

Photo: Courtesy of Hilton Québec All rooms offer spectacular views of either “Vieux-Québec”, the majestic St. Lawrence River, the Parliament of Québec Province or the Laurentian Mountains. You can even enjoy great views from the fully equipped Fitness Center when gazing out of the ceiling-to-floor windows OR when relaxing in their outdoor swimming pool. If you don’t feel like walking into the Old City, then after an intense day of conference sessions, perhaps you’ll want to unwind in the Hilton’s Allegro Restaurant and Bar or any number of other dining options within a block or two.

Rooms for Several meeting rooms are available for use by any registered conference attendee Side Meetings at the Hilton Québec on a first come, first served basis. NSREC encourages side meetings to be scheduled at times other than during technical sessions. Contact ETC Services at 720-733-2003 or send an e-mail to [email protected] to make side meeting reservations before the conference. To make a side meeting reservation during the conference, see the NSREC On-site Registration Desk staff on Level 1, Hilton Québec (above the lobby).

Notes: You must register for the conference before a side meeting room can be reserved! All audio/visual equipment and refreshments must be coordinated through the hotel and are the responsibility of the attendee hosting the meeting.

Messages A message board for incoming messages will be located in the pre-function area outside the Québec City Convention Centre MultiPurpose Hall 2000A-B during the 418-647-6540 conference. Faxes can be received through the hotel’s guest fax but there must be a FAX: 418-647-6488 cover sheet stating the recipient’s name, noting the NSREC conference, and advising the total number of pages being sent. There is no fee for incoming faxes but they will be accepted for hotel guests only.

Continental The 2009 IEEE NSREC will provide continental style breakfasts and refreshments Breakfast and at breaks during the NSREC Short Course and Technical Sessions. Breakfast on Coffee Breaks Monday - Friday will begin at 7:30 AM for registered conference attendees only.

Business Center The Hilton Québec has a self-service Business Center. Available services include black and white photocopier, color photocopier, computer with internet service, and color computer printers. Costs associated with the Business Center must be paid via credit card. The Québec City Convention Centre has a “mobile” Business Center that will be set-up near our conference area with some capabilities such as photocopying. In addition, their staff at this desk also work as a “concierge” to supply local information on sights to see, restaurants, and more. The hours that this desk will be open are still to be determined.

43 RegistrationRegistration andand TravelTravel

Conference To pre-register for the NSREC, complete the conference registration form enclosed in Registration this booklet, or register on-line at www.nsrec.com. Please note that registration fees are higher if the payment is received after June 19, 2009.

ETC Services, Inc. Mail the conference registration form with your remittance to ETC Services, Inc. 2254 Emerald Drive The registration form, with payment, should be mailed to arrive no later than seven Castle Rock, CO 80104 days prior to the conference, or arrangements should be made to hand carry fees for on-site registration. Faxed registrations will be accepted with credit card payment. 720-733-2003 Telephone registrations will not be accepted. You can also register via the internet, as Fax: 720-733-2046 long as all of the credit card information is included. Go to the NSREC web site for on-line registration at www.nsrec.com. etcservices@ qwestoffice.net Registration fees should be made payable to the “IEEE NSREC” and must be in U.S. funds only. There are three ways to remit advanced payment of registration and activity fees: 1) check made out in U.S. dollars and drawn on a U.S. bank, 2) U.S. Money Order, or 3) Mastercard, VISA, or American Express credit card.

On-site Registration On-site conference registration will take place at the Hilton Québec in the Pre- Location Function area outside the Hilton’s ballroom on the first floor. If you have not yet registered, go to the hotel’s built-in Conference Registration Counter for your initial registration. For those who had already pre-registered, your packets can be picked up at the Conference Registration tables. Please note that this area is actually on the second floor of the hotel, above the hotel lobby. However, in the elevator, it is shown as “Level 1.”

On-site Registration Sunday, July 19 5:00 PM – 9:00 PM Hours Monday, July 20 7:30 AM – 4:00 PM 6:00 PM – 9:00 PM

Tuesday, July 21 7:30 AM – 5:30 PM

Wednesday, July 22 7:30 AM – 3:00 PM

Thursday, July 23 7:30 AM – 3:00 PM

Friday, July 24 7:30 AM – 10:00 AM

CONFERENCE A $25 processing fee will be withheld from all refunds. Due to advance financial CANCELLATION commitments, refunds of registration fees requested after June 19, 2009 cannot be guaranteed. Consideration of requests for refunds will be processed after the conference. To request a refund, you must notify ETC Services by fax at 720-733-2046 or e-mail at [email protected].

44 RegistrationRegistration andand TravelTravel

Hotel Reservations Our conference hotel will be and information the Hilton Québec located at the edge of the charming Old City. Hotel amenities include Hilton Québec a restaurant, a lounge, heated outdoor pool, well-equipped 1100 boul. Rene- health club, concierge, busi- Levesque Est ness center, babysitting, room Québec, QC G1R 4P3 service, laundry service, and a Canada Club Level. A small food-court is located below the hotel in the 418-647-2411 underground walkway. Photo: Courtesy of Hilton Québec fax: 418-647-3737 The 571-room Hilton offers the following in each room: individual climate control, www.hiltonQuebec. TV with pay movies, high-speed internet (at a fee), large work table, AM/FM radio, com coffee maker, hairdryer, iron and ironing board, multiple phones with voice mail, one king or two double beds.

HOTEL RESERVATIONS The negotiated group rate for a standard room is Canadian $216.00 + tax for single or double occupancy. Since the U.S. government per diem is higher than this amount, there is no special government block. Rooms on the Executive Level (concierge club privileges) are at the rate of Canadian $276.00 + tax for single or double occupancy. There is no additional charge for children 12 years of age and younger when sharing a room with an adult and utilizing existing beds. Each third and fourth person in the room (13 years of age and older) will be charged Canadian $25.00 + tax per night.

All rooms must be guaranteed with a credit card or deposited by check. The cut-off for IEEE NSREC reservations is at 5:00 PM Eastern Time on June 19, 2009. Once the room block has been filled OR after the cut-off date (whichever comes first!), room accommodations will be confirmed on a space available basis and the room rate may be higher. This is HIGH season in Québec so early reservations are strongly suggested!

When you check into the hotel, please be sure to verify your departure date. Leaving the hotel earlier than that shown on your reservation will result in a $50.00 + tax “early departure” fee. However, if you advise them by no later than 4:00 PM on the day prior to your departure, there will be no fee assessed.

Reservations can be made by calling Hilton Central Reservations, toll-free, at 800-445-8667 within the U.S. or 800-447-2411 within Canada. You can also call the hotel directly for reservations at 418-647-6500. Provide the following to ensure that you are getting our special rates:

Group rate booking code: IEEE NSREC

OR you can book through the internet on the following website:

www.hilton.com/en/hi/groups/personalized/YQBHIHH-IEEA09-20090718/index.jhtml

Click on “Book a Room,” enter your dates, and then follow the prompts to complete your reservation.

45 RegistrationRegistration andand TravelTravel

Airport and Jean-Lesage International Airport (code YQB) is about 18 kilometers (25 - 30 minutes) Transportation west of the Hilton Québec. The taxi rate is “fixed” at $30.00 Canadian one way. Information

Airport Shuttle There is no scheduled shuttle service from the airport.

Driving directions Depart airport south on Rue Principale from Jean Lesage Turn right at Route De l’Aeroport International Airport Continue on Auto Route Duplessis / Auto Route 540 Continue on Boulevard Laurier / Route 175 Continue on Rue Grande Allee / Route 175 Turn left at Avenue Honoré-Mercier Take first exit on roundabout to stay on Avenue Honoré-Mercier Turn left onto Boulevard René Lévesque E (second exit on round about) Hilton Québec is immediately on the right

PARKING Space is at a premium in this small enclave so there are fees for parking. Within the hotel, self-parking is at $23.00 per day (no in/out privileges) and valet is at $25.00 per day, (with in/out privileges). Both are chargeable to your room account.

Rental Car Discount Avis has been selected as the official rental car agency for the 2009 IEEE NSREC and Avis is offering discounted rates to the conference attendees. For reservations and information, call Avis at 1-800-331-1600 and be sure to mention AWD #A606096 in order to Avis number get the special conference rate. Or, you can go online at www.avis.com/AvisWeb/ AWD #A606096 reservation/ReservationsInitializer?AWD_NUMBER=A606096. These rates are valid at participating locations in Canada as long as you pick-up and return the car to the same station.

Car class Car group Daily Weekly Weekend (daily) Sub Compact A $50.00 $214.00 $25.00 Compact B $50.00 $215.00 $25.00 Intermediate C $52.00 $225.00 $27.00 Full-size 4Dr E $55.00 $236.00 $29.00 Premium G $57.00 $256.00 $31.00 Luxury H $65.00 $298.00 $42.00 Sport Utility W $81.00 $349.00 $56.00 Minivan V $85.05 $366.55 $59.00

• Renter must meet Avis’ age, driver, and credit requirements. • The above rates are subject to change. • Discount is effective 7 days before and 7 days after the conference. • Return to the same renting location or additional surcharges may apply. • Weekend daily rates are available from noon Thursday - Monday at 11:59 PM (vehicle must be checked out by 3:00 PM Sunday). • When reservations are booked, the above rates will be automatically compared to Avis’ published rates, including internet rates, to ensure the attendees receive the lowest rate that they have to offer. • The attendees must use the assigned AWD# to receive the discounts being offered. • Rates do not include any state or local surcharges, tax, optional coverages or gas refueling charges.

46 IndustrialIndustrial ExhibitsExhibits

The NSREC 2009 Industrial Exhibits will be located in the Québec City Convention Centre, MultiPurpose Halls 2000C-2000D begining at 10:00 AM on Tuesday and until 1:30 PM on Wednesday. It will feature the leading suppliers of radiation-hardened products, related materials, and services. The exhibit offers companies the opportunity to showcase their products, technologies, and services to key technical and management personnel associated with electronics used in space vehicles, military electronics, and applications requiring radiation tolerance in harsh environments. Attendees are encouraged to stop by and visit the vendors. Breaks will be held in the exhibitor areas on Tuesday and Wednesday.

A reception, hosted by the exhibitors and open to all conference attendees and their guests, will be held Tuesday evening and will feature complimentary beverages Laura Burcin followed by a full dinner buffet. Industrial Exhibits Chairman NOTE: Children under 16 must be accompanied by an adult in the Exhibits.

For additional information, contact:

Laura Burcin Phone: 703-367-4507 BAE Systems Fax: 703-367-5234 Email: [email protected]

Or contact us through the internet at: www.nsrec.com/exhibit.htm

Exhibit Hall Hours Tuesday, July 21 10:00 AM - 4:00 PM 6:00 PM - 10:00 PM 6:00 PM Cocktails 7:00 PM Buffet 9:00 PM Raffle drawing

Wednesday, July 22 10:00 AM - 1:30 PM

NSREC Industrial Entrance Exhibits 401 207 306 307 406 403 Québec City 209 308 309 408 405 Convention Centre, 104 107 206 407 Multipurpose Halls 2000C-2000D 106 109 208 409 108 110 112 411 114 113 212 213 312 313 412 413 116 115 214 215 314 315 414 415 417

47 IndustrialIndustrial ExhibitsExhibits

Exhibitors Please check our web site (www.nsrec.com) for a current listing of companies exhibiting at 2009 NSREC.

Company Internet Site Booth # 3D Plus - USA www.3d-plus.com 109 Actel Corporation www.actel.com 313 Aeroflex Colorado Springs www.aeroflex.com/HiRel 407, 409 Air Force Research Laboratory/RVSE www.kirtland.af.mil/afrl_vs 406 ASIC Advantage www.asicadvantage.com 401 Atmel www.atmel.com 108, 110 BAE Systems www.baesystems.com/rad750 411 Boeing www.boeing.com/ssed 308 C-MAC MicroTechnology www.cmac.com 107 CORWIL Technology Corporation www.corwil.com 314 Crane Aerospace & Electronics www.craneae.com 206 Cyclotron Institute, Texas A & M cyclotron.tamu.edu/ref 106 University Defense Microelectronics Activity www.dmea.osd.mil 215 (DMEA) Honeywell Solid State Electronics Co. www.myspaceparts.com 209 International Rectifier hirel.irf.com 408 Intersil Corporation www.intersil.com 307 JL Shepherd & Associates www.jlsheperd.com/ 214 Lawrence Berkeley National www.lbl.gov 415 Laboratory Maxwell Technologies www.maxwell.com 315 Micro-RDC www.micro-rdc.com 403 Microsemi Corp. www.microsemi.com 414 Modular Devices Inc. www.mdipower.com 405 M.S. Kennedy Corporation www.mskennedy.com 212 National Semiconductor www.national.com 116 Northrop Grumman www.northropgrumman.com 412 Electronics Systems Peregrine Semiconductor Corp. www.psemi.com 312 Prarie View A&M - NASA Center www.pvamu.edu/carr 104 for Applied Rad Research Radiation Assured Devices www.radiationassureddevices.com 207 Robust Chip, Inc. www.robustchip.com 112 Sandia National Laboratories www.sandia.gov 309 Silvaco Data Systems www.silvaco.com 417 Survivability, Vulnerability, & www.wsmr.army.mil/capabilities/ 306 Assessment/ White Sands datts/testing/lab_fac/ Missile Range nucleareffectsfac.html Teledyne Microelectronics www.teledynemicro.com 208 United States Semiconductor www.us-semi.com 114 Ultracomm www.ultracomm-inc.com 413 Vanderbilt University - Institute for www.isde.vanderbilt.edu 213 Space and Defense Electronics Viasic, Inc. www.viasic.com 113 Xilinx www.xilinx.com 115

48 ' BEC C E I T U Y 2009 IEEE NSREC Technical Sessions and Q

2 Short Course Registration Form 0 C 0 E 9 N S R

Mail or Fax this form and your remittance Name ______(payable to IEEE NSREC) to: Last Name First Name Middle Initial ETC Services, Inc. Name to 2254 Emerald Drive appear on badge ______Castle Rock, CO 80104 720-733-2003 Fax: 720-733-2046 Company/Agency ______REGISTRATION FEES (in U.S. dollars) Mailing Address ______Late fee REQUIRED if payment received after June 19, 2009. Early Late ______IEEE Member * Short Course $260 $310 $______Technical Sessions $425 $510 $______City ______Non-IEEE Member Short Course $325 $385 $______State ______Zip Code ______Technical Sessions $530 $635 $______Full-Time Students who are IEEE Members * Country ______Short Course $120 $310 $______Technical Sessions $120 $510 $______Telephone Number ______TOTAL AMOUNT ENCLOSED: $______Fax Number ______

PAYMENT OF FEES E-mail Address ______Enclosed is a check or money order in U.S. DOLLARS ONLY, drawn on or payable through a U.S. bank. Payable to: IEEE NSREC IEEE MEMBERSHIP Charge registration fees to my credit card (U.S. dollars): American Express Master Card Visa I am an IEEE Member. ______Membership Number Card Expiration No. ______Date ______I am not a Member, but I wish to join the IEEE. Printed Name ______Non-members must register at the non-member rate. Address ______Address ______Signature ______

CANCELLATIONS If your company or agency is going to pay by check at a later date, please do not complete the credit card A $25 processing fee will be withheld from all refunds. portion of this form. Only one form of Due to advance financial commitments, refunds of reg- payment is needed. istration fees requested after June 19, 2009 cannot be guaranteed. Consideration of requests for refunds will be processed after the conference. * To obtain IEEE rates, you must provide your IEEE number on this form.

' BEC C E I T U Y 2009 IEEE NSREC Q

2 Activities Registration Form 0 C 0 E 9 N S R

Conference Mail or Fax this form and your remittance Participant ______(payable to IEEE NSREC) to: ETC Services, Inc. Company/Agency ______2254 Emerald Drive Castle Rock, CO 80104 Address ______720-733-2003 Fax: 720-733-2046

City ______ACTIVITY FEES (in U.S. dollars) Late fee REQUIRED if payment received after State ______Zip Code ______June 19, 2009. We strongly encourage early registration; the number of tickets available for each event is limited. Children must be accompanied by an adult during all tours Country ______and social events. Number Total Early Late Attending Cost Telephone Number ______Québec City Tour: Monday, July 20 Adult $25 $30 ______$______Fax Number ______Child (age 3-12) $15 $18 ______$______Child (age 0-2)* $0 $0 ______Country Side Tour: Tuesday, July 21 Accompanying Persons ______Adult $45 $50 ______$______Name Child (age 3-12) $23 $28 ______$______Child (age 0-2)* $0 $0 ______Please list ages for children under age 21 only Evening Dinner Cruise: Wednesday, July 22 Adult $50 $65 ______$______Name Age Child (age 13-17) $35 $50 ______$______Child (age 3-12) $20 $30 ______$______Child (age 0-2)* $0 $0 ______Name Age Île d’Orléans Tour and Sugar Shack: Thursday, July 23 Adult $45 $65 ______$______Child (age 3-12) $23 $28 ______$______Name Age Child (age 0-2)* $0 $0 ______* Lap child, no meal provided ______Name Age TOTAL AMOUNT ENCLOSED: $______

PAYMENT OF FEES CANCELLATIONS Enclosed is a check or money order in U.S. DOLLARS ONLY, drawn on or payable To encourage advanced registration for conference through a U.S. bank. Payable To: IEEE NSREC social activities, we will refund all activity fees for Charge registration fees to my credit card (U.S. dollars): conference attendees and/or their companions who American Express Master Card Visa for any reason are unable to attend the conference. If your plans change after this form is submitted and Card Expiration No. ______Date ______you would like to request a refund, you must notify ETC Services by email at etcservices@qwestoffice. Printed Name ______net or FAX at 720-733-2046 no later than July 10 or notify the conference registration desk when picking Address ______up your registration materials (but by no later than Address ______2 business days before the scheduled activity). Signature ______

SocialSocial ProgramProgram

Québec City, NSREC 2009 will be held at the Québec City Convention Centre in Québec City, Québec, Canada Québec, Canada and the Hilton Québec, which is connected by indoor walkways to the convention centre and a concourse of shops. All rooms feature a spectacular view of the city.

Québec City is the capital of the Canadian province of Québec. Québec City’s Old Town is the only North American fortified city north of Mexico whose walls still exist and was declared a World Heritage Site by UNESCO in 1985 as the “Historic District of Old Québec.” It is also one of the oldest cities in North America. Québec City is internationally known for its Summer Festival, Winter Carnival and the Château Frontenac, a historic hotel which dominates the city skyline. The chief of Parliament, the National Assembly of Québec, the National Museum of Fine Arts and the Museum of Civilization are found within or near Québec City’s Old Town. Among the tourist attractions near the city are Montmorency Falls, the Basilica of Sainte-Anne-de-Beaupré in the town of Sainte-Anne-de-Beaupré, and the Île d’Orléans. Conference attendees and companions will enjoy this historic city’s European nature, culture, and fine food. For more information on Québec City, visit “Enjoy your stay while you visit www.quebecregion.com, for additional information on the Hilton Québec City, historic Québec City.” www.hiltonquebec.com

Dave Hiemstra, An interactive map of Québec City to assist you in finding attractions, MDA Space Missions, restaurants, shopping, and rental’s is available at Website: Local Arrangements Chairman www.maps.worldweb.com/QuebecCityMap.html

Children must be accompanied by an adult during all tours and social events.

Parliament Buildings Photo: Courtesy of Dave Hiemstra

Sunday, July 19 Please join us for complimentary food and drinks in the Foyer/Anteroom, Level 1, 6:00 PM to 8:00 PM Hilton Québec. This will be a great time to meet old friends and renew old acquain- Short Course tances! Open to all conference attendees and their guests. Reception

53 SocialSocial ProgramProgram

Monday, July 20 Experience the European charm of the first 10:00 AM to 12:00 PM French settlement in North America. This is Québec City Tour your chance to visit history first hand. The Latin Quarter, Plains of Abraham, Ramparts, world famous Château Frontenac, National Assembly, Basilica, City Hall, Place-Royale, Citadel and a glimpse of modern Québec City are the perfect introduction to the city.

Tour buses will depart promptly at 10:00 AM from the Hilton lobby for an orientation bus tour of the city. Buses will return to the Hilton by 12:00 PM. Foldable strollers can be taken on the bus. Please bring water and your camera!

Place-Royale Photo: Courtesy of Dave Hiemstra

Tuesday, July 21 Travel back in time to rural Québec and enjoy 9:30 AM to 2:30 PM the view! As you ride along the 40 kilometers Country Side Tour of Chemin du Roy to Sainte-Anne-de-Beaupré, you will pass through the many traditional vil- lages of rural Québec. Along the way you will visit the Albert Gilles Copper Art Museum. In Sainte-Anne-de-Beaupré, you will be given time to visit the world famous Shrine. You will also stop at the Montmorency Falls (1 1/2 times higher than Niagara Falls). Lunch included at the Montmorency Manor.

Tour buses will depart promptly at 9:30 AM from the Hilton lobby. Buses will return to the Hilton

Basilica of Sainte Anne by 2:30 PM. Please remember to wear comfortable Photo: Courtesy of Dave Hiemstra walking shoes, water for the bus and your camera! Foldable strollers can be taken on the bus.

Tuesday, July 21 A reception will be hosted by the NSREC 6:00 PM to 10:00 PM exhibitors in Québec City Convention Industrial exhibits Centre, MultiPurpose Hall 2000C and reception 2000D (next to the technical sessions). Along with meeting representatives from 6:00 PM cocktails leading companies in the radiation-hard- 7:00 PM buffet ening industry, NSREC attendees and their guests can enjoy complimentary food and drinks. Visit the exhibits and any registered technical attendee can participate in the booth raffles. NOTE: Children under 16 must be accompanied by an adult in the Exhibits. Photo: Courtesy of Dave Bushmire

54 SocialSocial ProgramProgram

Wednesday, July 22 6:30 to 11:30 PM Evening Dinner Cruise

Photo: Courtesy of Croisières AML

The main social is a private NSREC evening dinner cruise aboard the Louis Jolliet (operated by Croisières AML) on the St. Lawrence River. See the city, the river and their history from a whole new perspective with a refreshing cocktail on one of the exterior terraces or enclosed decks. The cruise provides sightseeing of Québec City, its fortifications and escarpments, its surroundings, the Montmorency Falls and Île d’Orléans. Enjoy a delicious meal on one of the enclosed wide decks. As the sun goes down, take in all the magic of Québec City by night. And since no dinner cruise would be complete without Cruise terrace..... music, an opportunity for dancing will be pro- Photo: Courtesy of Dave Hiemstra vided on an exterior terrace as the stars come out over Québec City!

Buses start leaving at 6:30 to 7:00 PM from the Hilton lobby for the short ride to the boarding point at Chouinard Pier. Buses will meet us at Chouinard Pier for the short ride back to the Hilton at 11:00 PM.

We will board the Louis Jolliett at 7:30 PM. Enjoy

refreshments prior to the dinner buffet commenc- Montmorency Falls ing at 8:15 PM. Seating is available on one of Photo: Courtesy of Dave Hiemstra .....and dinner three enclosed dining decks. Photo: Courtesy of Dave Hiemstra Foldable strollers can be taken on the bus and cruise. Please bring a light jacket or sweater since it will be breezy and cool during the cruise. Don’t forget your camera!

55 SocialSocial ProgramProgram

Thursday, July 23 Visit an orchard with its own- 9:30 AM to 3:30 PM ers and taste their ciders, the Île d’Orléans Tour duck terrine, confit, marinades… and Sugar Shack everything is home made! Visit the installations and experience an authentic sugar shack and its traditional menu and cultural entertainment! A stop will be made at Chocolaterie de l’Île d’Orléans to enjoy its home made products. Amazing picture stops

along the way and discover other Île d’Orléans Park secrets of the island! Lunch is Photo: Courtesy of Dave Hiemstra included.

Tour buses will depart promptly at 9:30 AM from the Hilton lobby. Buses will return to the Hilton by 3:30 PM. Please remember to wear comfortable walking shows, water

Île d’Orléans typical church for the bus and your camera! Foldable strollers can be taken on the bus. Photo: Courtesy of Dave Hiemstra

Aerobics Get a healthy start on your day with Dave Bushmire, our own certified aerobics instructor. These sessions will take place in Dufferin room located on the Ground Floor of the Hilton at 6:30 - 7:30 AM, Tuesday, Wednesday, and Thursday.

Activities To encourage advance registration for conference social activities, NSREC will refund Cancellation Policy all activity fees for conference attendees and companions who for any reason are unable to attend the conference. If your plans change after your activities registration form is submitted, simply request a refund by notifying ETC Services by fax or e-mail no later than July 10, 2009. Fax: 720-733-2046. E-mail: [email protected]

56 LocalLocal ActivitiesActivities

The Citadel The Citadel is a military installation and official residence of the Governor General of Canada located atop Cap Diamant. It forms the eastern flank of the fortifications and is known as the Gibralter of the Americas. The Citadel is the home station of the Royal 22e Régiment of the Canadian Forces since 1920. During the summer, the Royal 22e Régiment performs traditional military ceremonies like the The Citadel Photo: Courtesy of Dave Hiemstra Changing of the Guard. Soldiers in scarlet uniforms are accompanied by the Regimental Band and by “Batisse”, the regimental goat. The Changing of the Guard takes place daily at 10:00 AM. The Beating of the Retreat takes place at 7:00 PM Friday, Saturday and Sunday.

Battlefields Park/ Battlefields Park, better known as the Plains Plaines d’Abraham of Abraham, is one of Canada’s most pres- tigious and historical parks. Site of many clashes for supremacy between the French and British Empires, the park is the scene of the 1759 Conquest. The park is to Québec what Central Park and Hyde Park are to New York and London.

Plaines d’Abraham Park Photo: Courtesy of Dave Hiemstra

Parliament Buildings Built between 1877 and 1886 according to plans drawn up by engineer-architect Eugène-Étienne Taché, the Parliament Building houses the National Assembly, with seats for 125 elected members for the province of Québec. The building, in Second Empire style, is imposing, its four wings standing as a square roughly 100 m on each side. The front of the building is decorated with 22 bronze statues, which pay tribute to the women and men who have made historical impact on Québec society. The building is very brightly illuminated at night, providing spectacular scenery. The architecture and interior decoration of the Parliament Building are very impressive. Guided tours enable visitors to see the National Assembly Chamber, where parliamentary debates take place. The chamber is filled with works of art and decorative items of exceptional beauty. Visitors also have access to the Legislative Council Chamber and the Speakers Gallery. The restaurant of the National Assembly is also worth a visit. Remarkable for its Beaux-Arts period decoration, Le Parlementaire enjoys an enviable reputation. Parliament Buildings Photo: Courtesy of Dave Hiemstra

57 LocalLocal ActivitiesActivities

Place-Royale A small sliver of land wedged between Cap Diamant and the St. Lawrence River, Place- Royale is the natural, strategic, and well-protected haven Samuel de Champlain chose to build his Habitation when he arrived in the New World on July 3, 1608. The Centre d’interprétation de Place-Royale—the newest component of the museum complex managed by the Musée de la Civilisation—is located on the site where Samuel de Champlain founded the first permanent French settlement in North America in 1608. Like the historic site, Centre d’interprétation is located between Cap Diamant and the St. Lawrence River, which was closely linked to the development

of Place-Royale. It is set right against Côte de Mural at Place-Royale la Montagne—the steep road established by Photo: Courtesy of Dave Hiemstra Samuel de Champlain in 1623—and opens onto Place-Royale in front of the bronze bust of Louis XIV and just steps from Notre‑Dame-des-Victoires Church and the vestiges of Champlain’s Habitation.

Dufferin Terrace The Dufferin Terrace overlooks the St. Lawrence River right by the Château Frontenac. This terrace was built in 1838, on the site of the former Saint-Louis Fort that Champlain had erected at the top of the cliff. The terrace owes its name to Lord Dufferin, the governor of Canada from 1872 to 1878. He’s one of the few people who fought against the demolition of the fortifications, which we can still admire today all around the city. The terrace is by far the most visited tourist attraction in Québec City. You can see the water slowly run in the St. Lawrence River. From up here you will get a breathtaking view of the South shore, the Île d’Orléans, the Old-Port and the Château Frontenac, the most photographed hotel in the world. The terrace is alive with street artists, musicians, mimes, one-man bands, and much more. You can also see the canons that were used to defend the city more than once, as well

Dufferin Terrace as the Samuel de Champlain monument and the one dedicated to generals Wolfe Photo: Courtesy of Dave Hiemstra and Montcalm, who both died during the battle of the Plains of Abraham. On the west side, you can take the Governors staircase to go to the Promenade bearing the same name and to the Plains of Abraham. On the east side, the Funiculaire will take you down to the heart of Place-Royale, or you can take the terrace and the

“Casse-cou” staircases, if you View of St. Lawrence River Photo: Courtesy of Dave Hiemstra feel like it.

58 LocalLocal ActivitiesActivities

Artillery Park An important barracks and military stor- National Historic Site age site built in the colonial era, Artillery Park was an integral part of the defensive works surrounding Québec, a city strategi- cally established on the edge of the river. Visit three historic buildings featuring unique architecture: the Dauphine Redoubt (1712), the Officers’ Quarters (1818), and the Artillery Park Photo: Courtesy of Dave Hiemstra Arsenal Foundry (1903). Take a visual ram- ble through the city of yesteryear and view By and Duberger’s impressive scale model built in 1808. In 1959, the Historic Sites and Monuments Board of Canada recognized the national historic significance of the park and its military installations.

Old-Port of Québec Discover the market in the heart of the Old Port, a Market Place tradition stretching back more than three centuries. The market offers freshly picked fruits and vegeta- bles and a host of local products daily. It also has a restaurant, outdoor café with view of the marina, milk bar, cheese store, and boutiques.

Québec National Old Port of Québec Market Place Québec has two outstanding museums. The Fine Photo: Courtesy of Dave Hiemstra Museum of Fine Arts has 27,000 works dating from the 17th century Arts/ Museum of to the present. The Museum of Civilization pres- Civilization ents four permanent and six temporary thematic exhibitions at a time.

Québec City Vicinity Parc Aquarium du Québec www.sepaq.com/paq/en/ Basilica of Sainte-Anne-de-Beaupré www.ssadb.qc.ca/en/index.htm Montmorency Falls Park www.sepaq.com/ct/pcm/en/ Canyon Ste-Anne www.canyonste-anne.qc.ca/ Île d’Orléans www.iledorleans.com/eng/mdl-carte.asp

Shopping The compact size of the Old Town, with its upper and lower sections, makes it espe- cially convenient for browsing and shopping. Lower Town Quartier Petit Champlain is to Québec City what Montmartre is to Paris: a must-see! Located in the lower town, just off Place-Royale. Upper Town - Wander along rue St-Jean, both within and outside the city walls, and on rue Garneau and Côte de la Fabrique, which branch off the east end of St-Jean. There’s a shopping concourse on the lower level of the Château Frontenac. For T-shirts, postcards, and other souvenirs, many shops line rue St-Louis.

Weather and The summer in Québec is warm and pleasant. In Québec City expect daytime highs Clothing around 22 to 25 °C (71 to 77 °F) and overnight lows of 10 to 13 °C (50 to 55 °F). You should bring shorts and short-sleeves, as well as some long pants and long-sleeved tops for evening outings. July is the sunniest month of the year. Québec’s summer is definitely made for those who love the outdoors! Don’t forget your camera while exploring the old city.

59 20092009 ConferenceConference CommitteeCommittee

General Chair Technical Program Local Arrangements Short Course Mark Hopkins Lew Cohn Dave Hiemstra Ken LaBel The Aerospace Corp. Naval Research Laboratory MDA Space Missions NASA Goddard 505-872-6201 202-404-4488, 703-808-4250 905-790-2800 301-286-9936 Fax: 505-872-6213 Fax: 202-404-7194 Fax: 905-790-4400 Fax: 301-286-4699 [email protected] [email protected] Dave.hiemstra@ [email protected] mdacorporation.com

Publicity Industrial Exhibits Awards Finance Teresa Farris Laura Burcin Véronique Ferlet-Cavrois Steven Clark Aeroflex Colorado Springs BAE Systems CEA/DIF AFRL 719-594-8035 703-367-4507 33-169-26-4265 505-846-6067 Fax: 719-594-8468 Fax: 703-367-5234 Fax: 33-169-26-7116 Fax: 505-846-0959 [email protected] laura.burcin@ [email protected] [email protected] baesystems.com

60 OfficialOfficial ReviewersReviewers

Philippe C. Adell, JPL Patrick Griffin, Sandia National Philippe Paillet, CEA/DIF Laboratories Richard Alstatt, ASI Jonathan Pellish, NASA Goddard Nadim Haddad, BAE Systems Tony Amort, Boeing Christian Poivey, ESA David Hansen, Boeing Lorena Anghel, TIMA/INPG Jeremy Popp, Boeing Reno Harboe-Sørenson, ESA Hugh Barnaby, ASU Robert Reed, Vanderbilt University Tim Holman, Vanderbilt University Janet Barth, NASA GSFC Philippe Roche, ST Microelectronics Stuart Huston, Boston College Francoise Bezerra, CNES Ken Rodbell, IBM Tomihiro Kamiya, Japan Atomic Vanderbilt University University of Bharat Bhuva, Energy Agency Anatoly Rozenfeld, Wollongong Ewart Blackmore, TRIUMF AJ Kleinosowski, Boeing Jim Salzman, TI Ben Blalock, University of Tennessee Ray Ladbury, NASA Goddard Leif Scheick, JPL Michael Bodeau, Northrop Grumman Justin Liker, Lockheed Martin Corp. Corp. Ron Schrimpf, Vanderbilt University Daniel Loveless, Vanderbilt University Sebastien Bourdarie, CNES Brian Sierawski, Vanderbilt University Cheryl Marshall, NASA GSFC Manuel Cabanas-Holmen, Boeing Alan Tipton, APL Lloyd Massengill, Vanderbilt Boeing NAVSEA Crane Ethan Cannon, University Jeffrey Titus, Lew Cohn, NRL Tom Turflinger, NAVSEA Crane Donald Mayer, The Aerospace Corp. Frederic Darracq, IMS Raoul Velazco, TIMA/INPG Joseph Mazur, The Aerospace Corp. Bronek Dichter, Assurance Technology Bert Vermeire, ASU Steven McClure, JPL Corp. Ari Virtanen, University of Jyväskylä Margaret McMahan, Lawrence Sophie Duzelier, Onera Berkeley National Laboratory Robert Walters, NRL Paul Eaton, MRDC Dale McMorrow, NRL Kevin Warren, ISDE Federico Faccio, CERN Marcus Mendenhall, Vanderbilt Gilson Wirth, UFRGS Véronique Ferlet-Cavrois, CEA/DIF University Larry Wissel, IBM Giles Gasiot, ST Microelectronics Esko Mikkola, ASU Warren Woodward, The Aerospace Michael Gordon, IBM Florent Miller, EADS-IW Corp. Pascal Gouker, MIT Lincoln Labs Joseph Minow, NASA/Marshall Vivian Zhu, TI Roger Greenwell, EagleST Nathan Nowlin, Sandia National Laboratories

61 RadiationRadiation EffectsEffects SteeringSteering GroupGroup

Chairman Executive Vice-Chairman Past Chairman Timothy R. Oldham Dan Fleetwood Ronald D. Schrimpf Perot Systems/GSFC Vanderbilt University Vanderbilt University Code 561.4 EECS Department Electrical Eng. and Comp. Science Building 22, Room 074 VU Station B #350092 P.O. Box 1608, Station B Greenbelt, MD 20771 2301 Vanderbilt Place Nashville, TN 37235 301-286-5489 fax: 301-286-4699 Nashville, TN 37235 615-343-0507 fax: 615-343-0601 [email protected] 615-322-2498 fax: 615-343-6702 [email protected] (Term expires: 7/09) [email protected] (Term expires: 7/09) (Term expires: 7/09)

Senior Member-at-Large Member-at-Large Junior Member-at-Large Marty Shaneyfelt Philippe Paillet Mike Xapsos Sandia National Laboratories CEA/DIF SEIM NASA Goddard P.O. Box 5800, MS-1083 Bruyeres-le-Chatel Greenbelt Rd, Code 561.4 Albuquerque, NM 87185-1083 91297 Arpajon Greenbelt, MD 20771 505-844-6137 fax: 505-844-2991 FRANCE 301-286-2263 fax: 301-286-4699 [email protected] 33-169-26-5089 fax: 33-169-26-7053 [email protected] (Term expires: 7/09) [email protected] (Term expires: 7/11) (Term expires: 7/10)

Secretary Vice-Chairman, Publications Vice-Chairman, Publicity Barry L. Willits Fred Sexton Teresa Farris Raytheon Company Sandia National Laboratories Aeroflex Colorado Springs Space and Airborne Systems P.O. Box 5800, MS-0671 4350 Centennial Blvd. 2000 E. El Segundo Blvd Albuquerque, NM 87185-0139 Colorado Springs, CO 80907-3486 M/S EO/EO1/C188 505-844-3927 fax: 505-845-7065 719-594-8035 fax: 719-594-8486 El Segundo, CA 90245 [email protected] [email protected] 310-616-1349 fax: 310-647-2539 (Term expires: 7/09) (Term expires: 7/09) [email protected] (Term expires: 7/09)

Special Publications Assignment Vice-Chairman, 2009 Conference Vice-Chairman, 2010 Conference Paul V. Dressendorfer Mark Hopkins Joseph M. Benedetto, Ph.D. Sandia National Laboratories The Aerospace Corp. Radiation Assured Devices (retired) PO Box 80360 5017 N. 30th Street 11509 Paseo del Oso, NE, ACP-537 Colorado Springs, CO 80919 Albuquerque, NM 87111 Albuquerque, NM 87198 719-531-0800 fax: 719-531-7729 505-292-5965 505-872-6201 fax: 505-872-6213 jbenedetto@ [email protected] [email protected] radiationassureddevices.com

Vice-Chairman, 2011 Conference Vice-Chairman, 2012 Conference NPSS AdCom Member Kay Chesnut Jobe Kenneth A. LaBel Dan Fleetwood The Boeing Company NASA Goddard, Radiation Effects Vanderbilt University Integrated Defense Systems and Analysis Group Leader, NASA EECS Department Space & Intelligence Systems Electronic Parts and Packaging VU Station B #350092 W/S10/S348 (NEPP) Program Co-Manager 2301 Vanderbilt Place PO Box 92919 Code 561.4, Bldg 22, Rm 050 Nashville, TN 37235 Los Angeles, CA 90009 Grenbelt, MD 20771 615-322-2498 fax: 615-343-6702 310-416-3705 fax: 310-364-5143 301-286-9936 fax: 301-286-4699, [email protected] [email protected] [email protected] (Term expires: 12/09)

NPSS AdCom Member NPSS AdCom Member RADECS Liaison Jim Schwank Janet Barth Véronique Ferlet-Cavrois Sandia National Laboratories NASA Goddard CEA/DIF SEIM PO Box 5800, MS-1083 Code 561, Bldg 23, Room E319 Bruyeres-le-Chatel Albuquerque, NM 87185 Greenbelt, MD 20771 91297 Arpajon 505-844-8376 fax: 505-844-2991 301-286-5966 fax: 301-286-5475 FRANCE [email protected] [email protected] 33-169-26-4265 fax: 33-169-26-7116 (Term expires: 12/10) (Term expires: 12/11) [email protected] (Term expires: 9/12)

62 ANNOUNCEMENTANNOUNCEMENT andand FIRSTFIRST CALLCALL FORFOR PAPERSPAPERS

2010 IEEE Nuclear and Space Radiation Effects Conference Short Course and Radiation Effects Data Workshop July 19 - 23, 2010 Sheraton Denver Downtown Hotel Denver, Colorado www.nsrec.com The 2010 IEEE Nuclear and Space Radiation Effects Conference will be held July 19 - 23 in Denver, Colorado at the Sheraton Denver Downtown Hotel. The Sponsored By Conference features a technical program consisting of eight to ten technical sessions IEEE/NPSS Radiation Effects Committee of contributed papers describing the latest observations in radiation effects, a Short Supported By Course on radiation effects offered on July 19, a Radiation Effects Data Workshop, Defense Threat Reduction Agency and an Industrial Exhibit. The Technical program includes oral and poster sessions. Air Force Research Laboratory Sandia National Laboratories At this meeting of engineers, scientists, and managers, papers will describe Jet Propulsion Laboratory nuclear, space, atmospheric, and terrestrial radiation effects on electronic and NASA Electronic Parts and photonic materials, devices, circuits, sensors, and systems. Papers will also describe Packaging Program semiconductor processing technology and design techniques for producing radiation- BAE Systems Micro-RDC tolerant (hardened) devices and integrated circuits. International participation is Honeywell strongly encouraged. Boeing Northrop Grumman We are soliciting papers describing significant new findings in the following Aeroflex Colorado Springs or related areas:

Conference Committee Basic Mechanisms of Radiation Effects in Electronic Materials and Devices General Chairman ■ Ionizing Radiation Effects Joseph Benedetto ■ Materials and Device Effects Radiation Assured Devices ■ Displacement Damage 719-321-0367 ■ Single-Event Charge Collection Phenomena and Mechanisms Technical Program ■ Jeffrey Black Radiation Transport, Energy Deposition and Dosimetry ■ Vanderbilt/ISDE Processing-Induced Radiation Effects 615-322-3758 Radiation Effects on Electronic and Photonic Devices and Circuits Local Arrangements ■ Hugh Barnaby MOS, Bipolar and Advanced Technologies ■ Arizona State University Isolation Technologies, such as SOI and SOS 480-727-0289 ■ Optoelectronic and Optical Devices and Systems Short Course ■ Methods for Hardened Design and Manufacturing Ron Lacoe ■ Modeling of Devices, Circuits and Systems The Aerospace Corporation ■ Particle Detectors and Associated Electronics for High-Energy Accelerators 310-336-0118 ■ Cryogenic or High Temperature Effects Publicity ■ Single-Event Effects Teresa Farris ■ Aeroflex Colorado Springs Novel Device Structures, such as MEMS and Nanotechnologies 719-594-8035 Space, Atmospheric, and Terrestrial Radiation Effects Finance ■ Characterization and Modeling of Radiation Environments Dennis Thompson ■ ITT Space Systems Space Weather Events and Effects ■ 585-269-6522 Spacecraft Charging ■ Awards Predicting and Verifying Soft Error Rates (SER) Lew Cohn NRL Hardness Assurance Technology and Testing ■ 202-404-4488 Testing Techniques, Guidelines and Hardness Assurance Methodology ■ Industrial Exhibits Unique Radiation Exposure Facilities or Novel Instrumentation Methods Kirby Kruckmeyer ■ Dosimetry National Semiconductor 408-721-3548 New Developments of Interest to the Radiation Effects Community Paper Summary Deadline: February 5, 2010

63 Procedure for Submitting Summaries Authors must conform to the following requirements: Summaries must be received by 1. Prepare a single Adobe Acrobat file consisting of an informative two to four February 5, 2010 page summary describing results appropriate for 12-minute oral or a poster presentation. The summary must include sufficient detail about the work to permit a meaningful technical review. In the summary, clearly indicate (a) the Detailed submission and purpose of your work, (b) significant new results with supporting technical formatting instructions material, and (c) how your work advances the state of the art. Show key refer- will be available after ences to other related work. The summary must be no less than two and no January 4, 2010 more than four pages in length, including figures and tables. All figures and at www.nsrec.com tables must be large enough to be clearly read. Note that this is more than an abstract, but do not exceed four pages. 2. Prepare your summary in single-column format, using 11 point or greater font size, formatted for either U.S. Standard (8.5 x 11 inch) or A4 (21 x 29.7 cm) page layout, with 1 inch (2.5 cm) margins on all four sides. 3. Obtain all corporate, sponsor, and government approvals and releases necessary for presenting your paper at an open attendance international meeting. 4. Summary submission is electronic only, through www.nsrec.com. The submission process consists of entering the paper title, author(s) and affiliation(s), and an abstract no longer than 35 words. Authors are prompted to state their preference for presentation (oral, poster, or data workshop poster) and for session. Details of the submission process may be found at www.nsrec.com. The final category of all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers from initial submissions..

Papers accepted for oral or poster presentation at the technical program will be eligible for publication in a special issue of the IEEE Transactions on Nuclear Science (December 2010) based upon papers from the Conference. Selection for this issue will be based on a separate submission of a complete paper. These papers will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. Further information will be sent to prospective authors upon acceptance of their NSREC summary. It is not necessary to be an IEEE member to present a paper or attend the NSREC. However, we encourage IEEE and NPSS membership of all NSREC participants.

Radiation Effects Data Workshop The Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems. Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in a radiation environment, and for designers of radiation-hardened systems. Papers describing new simulation or radiation facilities are also welcomed. The procedure for submitting a summary to the Workshop is identical to the procedure for submitting NSREC summaries. Radiation Effects Data Workshop papers will be published in a Workshop Record and are not candidates for publication in the Conference issue of the IEEE Transactions on Nuclear Science.

Denver, Colorado NSREC 2010 will be held in Denver, Colorado, July 19-23 at the Sheraton Denver Downtown Hotel. Located on the 16th Street Pedestrian Mall in the heart of downtown Denver, you will be near lots of great shopping, restaurants, and activities. The hotel is near the Colorado Convention Center, within walking distance of the Denver Art Museum and the State Capitol, and just minutes from the Pepsi Center and Coors Field. The Sheraton Denver’s $70 million renovation will be completed for NSREC! Denver, established in 1858 when gold was discovered, is the perfect blend of outdoor adventure and urban sophistication. With snowcapped peaks providing a spectacular backdrop, Denver is as refined as it is laid-back And with 300 days of sun- shine per year, bring your sunscreen! Known as the Mile High City (5,280 Photo: Steve Crecelius for the Denver Metro Convention & feet), a round brass cap embedded in the western entrance stairs of the State Visitors Bureau Capitol marks the spot. www.denver.org

64 NotesNotes

65 DrivingDriving DirectionsDirections

Driving directions Depart airport south on Rue Principale from Jean Lesage Turn right at Route De l’Aeroport International Airport Continue on Auto Route Duplessis / Auto Route 540 (YQB) Continue on Boulevard Laurier / Route 175 Continue on Rue Grande Allee / Route 175 Turn left at Avenue Honoré-Mercier Take first exit on roundabout to stay on Avenue Honoré-Mercier Turn left onto Boulevard René Lévesque E (second exit on round about) Hilton Québec is immediately on the right

Map: Courtesy of Québec City Convention Centre

66 QQuuéébbeecc CCiittyy

Photo: Courtesy of Hilton Québec

Grand Allée Photo: Courtesy of Dave Hiemstra

ChâteauFrontenac Photo: Courtesy of Dave Hiemstra

Mural at Place-Royale Photo: Courtesy of Dave Hiemstra

Photo: Courtesy of Hilton Québec www.nsrec.com

Please see inside back cover for driving directions.