Once in your life hover through Wuppertal Welcome to ESREF 2006 CONFERENCE PROGRAMME What actually, is so lovable about this city? ESREF 2006 will take place in the most remarkable town hall “Stadthalle” of Wuppertal, the city of first industrial development in th First, of course, its world-renowned suspension railway, which “like a 17 EUROPEAN SYMPOSIUM dragon, hard as steel, with several stations for heads and Germany, but nevertheless surrounded by parks and forests. To all participants of this conference a hearty welcome is given by the flashing eyes, twists and turns above the river”, as the writer Else organizing committee. RELIABILITY OF ELECTRON DEVICES, Lasker-Schüler, the city’s most famous daughter, describes it. It must

be said, however, that for the people of Wuppertal it was not a case of FAILURE PHYSICS AND ANALYSIS The programme covers all important reliability issues of electronic love at first sight as far as the “Schwebebahn” is concerned. Indignant devices within a frame of fourteen sessions. The session topics were residents raised a hue and cry when at the turn of the century the selected to reflect the main areas of interest within the scope of the neighbouring towns of Barmen and Elberfeld, both rich in tradition, but symposium: Reliability for Transportation, Physical Modelling and much later in 1929 destined to amalgamate with other neighbouring Wuppertal - Germany Simulation for Reliability Prediction, Advanced Failure Analysis, communities to form the city Wuppertal, gave the green light for work Failure Mechanisms in New Materials and Transistors, Reliability of to begin on the “millipede”. Despite all the protests, the suspension MEMS, Packaging and Assembly Reliability, Reliability of High Power 3rd – 6th October 2006 railway very soon proved to be a favourite with the people of Semiconductors. Regarding product application the papers show Wuppertal and became tourist attraction number one. increased interests in the areas of MEMS and Power Devices, the What is particularly attractive about this “city in the country”, with latter on the background of economic energy supply, mobile systems 360,000 inhabitants, is its topographical location, surrounded by and hybrid drives. wooded hills in the narrow valley of the Wupper, and the city boundaries melt into the hilly fields and extensive woods of the Graf For the scientific program, special care has been taken in choosing Berg region (Bergisches Land). From any part of the city it is only a keynote and invited papers featuring authors from Denmark, France, ten-minute walk to the nearest park or shady woodland path. Two Germany, Japan, The Netherlands, Taiwan, and the USA. Among the thirds of the total municipal area is green belt: woods, meadows, invitees are the winners of the Best Paper Awards of the International gardens and fields. A favourite day-trippers’ rendezvous for the people Reliability Physics Symposium (IRPS 2006), International Symposium of Wuppertal as well as for visitors from near and far is the zoo - one on Physical and Failure Analysis of Integrated Circuits (IPFA 2006), of the most scenically attractive in the world. Wuppertal, a mixture and the Japanese RCJ Reliability Symposium 2006. of outgoing metropolis and cosy village richly adorned with stucco facades and handsome half-timbered houses, offers interesting Besides the presentations of scientific papers, the ESREF surprises: a total of 8,723 municipal steps have to be climbed to get Symposium aims to provide education in the fields of reliability of from the lowest point to the highest, for Wuppertal lies at an altitude of electronic devices and their physical analysis. Accordingly, six between 100 and 350 meters above sea level. tutorials with actual topics are included. Workshops on reliability of Power Electronics, MEMs- and Nano-reliability, and FIB application Wuppertal has been a university town since 1972. 17,000 young will take place, as well as expert meetings of European FIB User people from 80 different countries are distributed over 7 faculties, and Group (EFUG), European Failure Analysis NETwork (EUFANET), the technical academy in Wuppertal with 26,000 students is one of Society for Information Techniques (ITG), and last but not least a organized by: the most important educational establishments in Germany. considerable number of equipment demonstrations will give an insight into the present state of instrumentation. Cultural tastes are catered for in a variety of ways. The tripartite Lehrstuhl für Elektronik theatre, consisting of opera house, playhouse and Pina Bausch’s modern dance theatre, has made a name for the city far beyond its The editors of this conference wish to thank the session chairpersons Bergische Universität Wuppertal own boundaries, the city’s concert hall (Stadthalle) on the of the Technical Programme Committee for the enormous amount of Johannisberg counts among the most beautiful and acoustically work and positive collaborations they invested into the selection and excellent concert halls in Europe. An eldorado for art lovers is the “Von organisation of the papers for the conference sessions. They also der Heydt- Museum” with masterpieces by 19th and 20th century thank all authors for their contributions to this symposium. artists. The first Picasso ever to appear in public went on display here. Those interested in science should visit the “Fuhlrott- Museum”, named after J.C. Fuhlrott, discoverer of the Neanderthal man. Part of L.J. Balk W.H. Gerling E.Wolfgang the History Centre is the house were Engels was born (Engelshaus), in which there is a permanent display of materials associated with Friedrich Engels and other famous citizens of Wuppertal. The museum of early industries offers a glimpse of the industrial development of the Wupper valley. with the technical co-sponsorship of: And while on the subjects of industry, quality products from Wuppertal have made the city famous on a worldwide scale machine tools, ball bearings, textile yarns, car accessories, cables, chemical products…, the city’s central situation has played a vital role in its economic growth.

The best way for the visitor to get a first glimpse of the city is a ride on the suspension railway. At its opening in 1900, the Emperor Wilhelm II was one of the party. The carriage he travelled in, known as the “Kaiserwagen”, is still in use and it just invites you to enjoy a leisurely coffee trip. Updated information available at: Journal Editor Chair G. Haller ST Microelectronics (France) L.J. Balk University of Wuppertal (Germany) D. Lewis IXL, University of Bordeaux (France) http://www.esref.com W.H. Gerling Consultant (Germany) B. Picart Atmel Roussel (France) E. Wolfgang Siemens (Germany) D. Pogany TU Wien (Austria) J. Reiner EMPA (Switzerland) Poster Chair A. Street Qualicom (USA) Location of the Conference E. Langer AMD Saxony (Germany) M. Vanzi University of Cagliari (Italy)

Historische Stadthalle Wuppertal

Johannisberg 40 Tutorial Chair D-42103 Wuppertal W.H. Gerling Consultant (Germany) Session D: Failure Mechanisms in New Materials and Transistors Germany - ESD / Transient Latchup - Backend of Line, Electromigration, ESD Phone: +49 (0)202 245890 Steering committee Fax: +49 (0)202 455198 X. Aymerich University of Barcelona (Spain) F. Fantini University of Modena (Italy) Internet: www.stadthalle.de L.J. Balk University of Wuppertal (Germany) H. Gieser Fraunhofer Institute IZM (Germany) J. Bisschop Philips (The Netherlands) A. Andreini ST Microelectronics (Italy) M. Ciappa ETH Zurich (Switzerland) M. Bafleur LAAS/CNRS (France) Conference Organisation Y. Danto IXL, University of Bordeaux (France) G. Boselli Texas Instruments (USA) F. Fantini University of Modena (Italy) I. De Munari University of Parma (Italy) University of Wuppertal W.H. Gerling Consultant (Germany) G. Ghibaudo ENSERG (France) Faculty of Electrical, Information and Media Engineering G. Groeseneken IMEC (Belgium) G. Ghidini ST Microelectronics (Italy) Department of Electronics V. Loll Nokia Mobile Phones (Denmark) G. Groeseneken IMEC (Belgium) Rainer-Gruenter-Straße 21 L. Lonzi ST Microelectronics (Italy) F. Irrera Università degli studi di Roma (Italy) D-42119 Wuppertal A.J. Mouthaan University of Twente (The Netherlands) L. Larcher University of Modena and Reggio Emilia (Italy) Germany Ph. Perdu CNES (France) G. La Rosa IBM (USA) Phone: +49 (0)2 02 439 1572 N. Stojadinovic University of Nis (Serbia & Montenegro) J. Lloyd IBM T.J. Watson Research Center (USA) Fax: +49 (0)2 02 439 1804 R.W. Thomas Technology Experts Network (USA) G. Meneghesso University of Padova (Italy) Internet: www.electronics.uni-wuppertal.de W. Wondrak DaimlerChrysler (Germany) T. Mouthaan University of Twente (The Netherlands) T. Oates TSMC (Taiwan R.O.C.) H. Reisinger Infineon Technologies (Germany) P. Salome SERMA Technologies (France) Conference Secretary Technical Programme Committee T. Smedes Philips Nijmegen (The Netherlands) W. Stadler Infineon Technologies (Germany) Mechthild Knippschild J. Stathis IBM (USA) Anita Wied Session A: Reliability for Transportation N. Stojadinovic University of Nis (Serbia & Montenegro) University of Wuppertal M. Takayanagi Toshiba (Japan) Faculty of Electrical, Information and Media Engineering J. Moltoft (Denmark) Z. Tokei IMEC (Belgium) Department of Electronics W. Wondrak DaimlerChrysler (Germany)

Rainer-Gruenter-Straße 21 W. De Ceuninck University of Hasselt (Belgium)

D-42119 Wuppertal K. Dittmann Microtec GmbH (Germany) Germany V. Loll Nokia Mobile Phones (Denmark) Session E: Reliability of MEMS Phone: +49 (0)2 02 439 1572 L. Rimestad Grundfos Management A/S (Denmark) I. De Wolf IMEC (Belgium) Fax: +49 (0)2 02 439 1804 R. Rongen Philips Semiconductors (The Netherlands) B. Michel Fraunhofer Institute IZM (Germany) M. Stoisiek University of Erlangen (Germany) R. Degraeve IMEC (Belgium) R.W. Thomas Technology Experts Network (USA) M. Germain IMEC (Belgium) X. Rottenberg IMEC (Belgium) S. Verlaak IMEC (Belgium) Organizing Committees: Session B: Physical Modelling and Simulation for Reliability Prediction Conference Chairman E. Hammerl Infineon Technologies (Germany) Session F: Reliability of High Power Semiconductors L.J. Balk University of Wuppertal ( Germany) F.P. McCluskey University of Maryland (USA) M. Ciappa ETH Zurich (Switzerland) J. Ma Nanometer Solutions Division (USA) M. Rittner Robert Bosch GmbH (Germany) Technical Programme Chairmen E. Olthof Philips Semiconductors (The Netherlands) W.H. Gerling Consultant (Germany) St. Azzopardi IXL, University of Bordeaux (France) E. Zschech AMD Saxony (Germany) G. Busatto University of Cassino (Italy) E. Wolfgang Siemens (Germany) P. Cova University of Parma (Italy) T. Licht Infineon Technologies (Germany) Conference Scientific Support Session C: Advanced Failure Analysis: Defect Detection and F. Fantini University of Modena (Italy) U. Scheuermann Semikron Electronik GmbH (Germany) Analysis R. Heiderhoff University of Wuppertal (Germany) M. Stoisiek University of Erlangen (Germany)

E. Langer AMD Saxony (Germany) Ch. Boit TU Berlin (Germany)

W. Mertin University of Duisburg-Essen (Germany) Session G: Packaging and Assembly Reliability Industrial Exhibition Ph. Perdu CNES (France) R. Heiderhoff University of Wuppertal (Germany) F. Altmann Fraunhofer Institute IWM (Germany) Y. Danto IXL, University of Bordeaux (France)

E. Atanassova Bulgarian Academy of Science (Bulgaria) G.Q. Zhang Philips Semiconductors (The Netherlands)

R. Cramer Infineon Technologies (Germany) O. Bonnaud UMR CNRS (France)

P. DeWolf Veeco Instruments (France) M. Brizoux Thales Research & Technology (France) M. Goossens Philips Research (The Netherlands) W. van Driel Philips Semiconductors (The Netherlands) Ch. Goupil Philips Composants (France) Schedule of Activities First floor:

University of Wuppertal Rossini Keynote 2 Rainer-Gruenter-Str. 21, Building FZH: Friday 6th Industrial Session Best paper of RCJ Mendelssohn Saal Mendelssohn Saal Mendelssohn

Monday, Oct. 2, 2006 Conference closing session

Workshops 10:00 – 18:00

Registration 9:00 – 16:00

Historische Stadthalle Wuppertal Johannisberg 40: Prediction Transistors Wandelhalle Postersession Postersession Thursday 5th Thursday Seminarraum Offenbach Saal Offenbach Saal Offenbach Saal Conference dinner Mendelssohn Saal Mendelssohn Mendelssohn Saal Mendelssohn Mendelssohn Saal Mendelssohn Wuppertaler Brauhaus Wuppertaler Großer Saal/Wandelhalle Großer Saal/Wandelhalle Tuesday, Oct. 3, 2006 Großer Saal/Wandelhalle Steering Committee Meeting

Registration 8:00 – 18:00 Transistors ESD/ Transient Latchup

Tutorials 8:30 – 12:00 Session G: Packaging and Assembly Reliability Session G1: Packaging and Assembly Reliability Session D: Failure Mechanisms in New Materials and Opening Session 14:00 – 15:30 Transistors - Backend of Line, Electromigration, ESD Session D2: Failure Mechanisms in New Materials and Session D1: Failure Mechanisms in New Materialsand Ground floor Afternoon Sessions 16:00 – 17:40 Session B: Physical and Simulation for Modeling Reliability Exhibition 17:40 – 18:00 Welcome reception 18:00 – 20:00

Wednesday, October 4, 2006

Registration 8:00 – 18:00

Morning Sessions 8:20 – 12:10

Afternoon Sessions 14:00 – 15:20 Rossini Tutorial 3 Tutorial 4

Tutorials 16:10 – 17:40 Seminarraum Semiconductors Semiconductors Offenbach Saal Offenbach Saal Offenbach Saal Wednesday 4th Mendelssohn Saal Mendelssohn Mendelssohn Saal Mendelssohn Workshops 16:10 – 17:40 Saal Mendelssohn Detection and Analysis Großer Saal/Wandelhalle Großer Saal/Wandelhalle Großer Saal/Wandelhalle Session E1: Reliability of MEMS Session F2: Reliability of High Power Thursday, Oct. 5, 2006 Session F1: Reliability of High Power Reliability of Power Electronics and Devices Session C2: Advanced Failure Analysis: Defect Registration 8:00 – 17:00 EUropean Failure Analysis NETwork -EUFANET Morning Sessions 8:20 – 12:10

Afternoon Sessions 14:00 – 15:40

Postersession 16:10 – 17:10

Steering Committee Meeting 17:00 – 18:30

Conference Dinner 19:00

Rossini Rossini Rossini Analysis Analysis Tutorial 2 Tutorial 6 Tutorial 1 Tutorial 5 Friday, Oct. 6, 2006 Keynote 1 Mahler Saal Mahler Saal Tuesday 3rd Transportation Offenbach Saal Offenbach Saal Offenbach Saal Basement (Rossini restaurant): Welcome reception Mendelssohn Saal Mendelssohn Mendelssohn Saal Mendelssohn

Registration 8:00 – 12:00 Session A: Reliability for Best paper of IRPS / IPFA Großer Saal/Wandelhalle Session C1: Advanced Failure Analysis: Defect Detection and

Industrial Session 8:30 – 10:00 Official opening of ESREF 2006 Closing Session 10:30 – 12:00

Official Conference Language

The conference language is English. Simultaneous translation will not

be available.

FG 01.01 University Monday 2nd

Nanoreliability Nanoreliability MEMS reliability ITG-Fachsitzung University FZH1 University FZH2 University FZH1 University FZH2 University FZH1

European FIB User Group –EFUG European FIB User Group –EFUG

Applications of FIB to MEMS reliability and

to to to to 8:30 14:00 15:30 10:00 10:30 12:00 16:00 17:30 Lunch Coffee Coffee Evening

Programme Overview Equipment demonstration John P. Kummer GmbH, Steinerne Furt 78, 86167 G14 Augsburg, Germany Equipment demonstration is provided as a valuable accompanying www.jpkummer.com Technical Sessions event which provides experience with advanced techniques and recent developments for testing and analysis. MASER Engineering, Capitool 56, P.O. Box 1438, 7500 BK G22 The accepted papers from Europe, United States, and Asia contribute Enschede, The Netherlands to the following sessions: The following companies participate: www.maser.nl

A Reliability for Transportation Company Booth B Physical Modelling and Simulation for Reliability Prediction OMNIPROBE Inc. / SEM-FIB Solutions, 7 Newland Mill, G8 C Advanced Failure Analysis: Defect Detection and Analysis No: Witney, Oxon, OX28 3HH, UK D Failure Mechanisms in New Materials and Transistors Agilent Technologies, Inc. Headquarters, 395 Page Mill W10 www.sem-fib.com - ESD / Transient Latchup Rd., Palo Alto, CA 94306 USA - Backend of Line, Electromigration, ESD www.agilent.com Oxford Instruments GmbH, Otto-von-Guericke-Ring 10, G25 E Reliability of MEMS 65205 Wiesbaden, Germany F Reliability of High Power Semiconductors AMETEK, Kreuzberger Ring 6, 65205 Wiesbaden, G7 www.oxford.de G Packaging and Assembly Reliability Germany P Poster Session www.ametek.de Qualitau Ltd, Kiryat Weizmann, Industrial Science Park, G15 P.O. Box 4047, Nes-Zionna 70400, Israel Bruker AXS Microanalysis GmbH, Schwarzschildstr. 12, G18 www.qualitau.com Workshops 12489 Berlin, Germany www.bruker-axs-microanalysis.com Raith GmbH, Hauert 18, 44227 Dortmund, Germany G27 Workshops complete the technical sessions and provide the www.raith.com opportunity for exchange of know-how on subjects in progress: BSW TestSystems & Consulting AG, Oskar-Messter-Str. G16 12, 85737 Ismaning, Germany RJL Micro & Analytic GmbH, Südring 10, 76689 Karlsdorf- G13 European FIB User Group – EFUG www.bsw-ag.com Neuthard, Germany MEMS reliability www.rjl-micro.de Nanoreliability Chiron Technology PTE LTD, 29 Woodlands Industrial Park W3 Applications of FIB to MEMS reliability and Nanoreliability El #4-01 NorthTech Lobby, 757716 Singapore SAM TEC GmbH, Scanning Acoustic Microscope W8 ITG-Fachsitzung www.chironholdings.com/chirontechnology/index.htm Technology Germany, Gartenstrasse 133, 73430 Aalen, EUropean Failure Analysis NETwork - EUFANET Germany Reliability of Power Electronics and Devices – Is Silicon Carbide a Credence Systems Corp., 1421 California Circle, Milpitas, G19 www.samtec-germany.com Reliability Challenge? CA 95035, USA

www.credence.com SEMICAPS Pte Ltd, 65 Science Park Drive, The Fleming, W9

Tutorials Singapore 118251 EO Elektronen-Optik-Service GmbH, Zum Lonnenhohl 46, G24 www.semicaps.com Tutorials by experts provide both up-dates on selected topics of actual 44319 Dortmund, Germany interest and opportunity for education and training. www.eos-do.de Sonoscan Inc., 2149 E. Pratt Boulevard, Elk Grove Village, G12 IL 60007, USA "Pb-free" challenges the industry – RoHS and its consequences for FEI Company, Achtseweg NRD 5, 5651 GG Eindhoven, G10 www.sonoscan.com production and processing of electr(on)ic components The Netherlands Equipment, Procedures and Process Limits for Leadfree Soldering www.fei.com SUSS MicroTec Test System GmbH, Süss-Straße 1, 01561 G21 Robustness Validation of products Sacka, Germany State of Art Gate Dielectric Reliability Modelling Hamamatsu Photonics Deutschland GmbH, 82211 G5 www.suss.com Effective ESD Protection for Mixed Power BCD Processes on Bulk and Herrsching, Germany SOI Substrates www.hamamatsu.de Synatron GmbH, Lilienthalstr. 21, 85399 Hallbergmoss, G26, Lock-in Infrared Thermography for IC Failure Analysis Germany G28 PICA Analysis Hitachi High-Technologies, Europapark Fichtenhain A12, W4 www.synatron.de 47807 Krefeld, Germany www.hitachi.de Synopsys, Inc., 700 E. Middlefield Road, Mountain View, G17 CA 64043, USA htt high tech trade GmbH, Landsberger Str. 402, 81241 W9 www.synopsys.com Munich www.httgmbh.de Thermo Electron GmbH, Im Steingründ 46, 63303 Dreieich, W7 Germany JEOL (Germany) GmbH, Oskar-von-Miller-Straße 1 A, G6 www.thermo.com 85386 Eching, Germany www.jeol.de Thermosensorik GmbH, Am Eichselgarten 7, 91058 G23 Erlangen, Germany Kammrath & Weiss GmbH, Im Defdahl 10F, 44141 W5, www.thermosensorik.de Dortmund, Germany W6 www.kammrath-weiss.de

Kleindiek Nanotechnik GmbH, Aspenhaustraße 25, 72770 G11 Reutlingen, Germany www.nanotechnik.com

Preliminary layout of Exhibition and Dining Area Keynotes Monday, October 2nd (excluding Rossini Restaurant) Reliability challenges in the nanoelectronics era 1 1,2 A.J. van Roosmalen , G.Q. Zhang 1Philips Semiconductors, Eindhoven, The Netherlands

2Delft University of Technology, Delft, The Netherlands 10:00 Workshop: European FIB User Group – EFUG

Organizer: Failure localization and failure characterization in on-chip copper Richard Langford, University of Manchester, United interconnect structures Kingdom E. Zschech, C. Hobert, E. Langer, H.-J. Engelmann Room: University of Wuppertal, FZH 1 AMD Saxony Manufacturing GmbH, Dresden, Germany

10:00 Workshop: MEMS reliability Invited Papers Organizer: I. De Wolf, IMEC, Leuven, Belgium Room: University of Wuppertal, FZH 2 Session A: Electrical steering of vehicles – fault-tolerant analysis and design 11:00 Workshop: ITG-Fachsitzung M. Blanke1, J.Sandberg Thomsen2 1 Organizer: W. Mertin, University Duisburg-Essen, Technical University of Denmark, Lyngby, Denmark Duisburg, Germany 2Aalborg University, Aalborg, Denmark Room: University of Wuppertal, FG-01.01

Session B: Design in reliability in advanced CMOS technologies 14:00 Workshop: Nanoreliability CR. Parthasarathy1,3, M. Denais1, V. Huard2, G. Ribes1, D. Roy1, C. 1 2 1 3 Organizer: J. Keller, AMIC, Berlin, Germany Guerin , F. Perrier , E. Vincent , A. Bravaix B. Michel, Fraunhofer IZM, Berlin, Germany 1STMicroelectronics, Crolles, France Room: University of Wuppertal, FZH 2 2Philips Semiconductors, Crolles, France

3L2MP-ISEN, UMR CNRS, Toulon, France 16:30 Workshop: Applications of FIB to MEMS reliability and

Nanoreliability Session C: Failure analyses for debug and ramp-up of modern Organizer: IC's Richard Langford, University of Manchester, United Ch. Burmer, S. Görlich Kingdom Infineon Technologies AG, Munich, Germany I. De Wolf, IMEC, Leuven, Belgium J. Keller, AMIC, Berlin, Germany Session D: Electromigration failure distributions of dual B. Michel, Fraunhofer IZM, Berlin, Germany damascene Cu / low-k interconnects Room: University of Wuppertal, FZH 1 A.S. Oates, S.C. Lee Taiwan Semiconductor Manufacturing Corporation Ltd., Hsinchu, Taiwan

Session E: Progress in Reliability Research in the Micro-Nano Region Tuesday, October 3rd B. Wunderle Fraunhofer IZM, Berlin, Germany 8:30 Tutorial T1: Session F: Reliability testing of high power semiconductors "Pb-free" challenges the industry - RoHS and its G. Coquery, INRETS, Arcueil Cedex, France consequences for production and processing of electr(on)ic components Session G: Modern IC packaging trends and their reliability F.-W. Wulfert, Freescale Halbleiter Deutschland GmbH, implications Munich, Germany R. Plieninger, M. Dittes, W. Mack, K. Pressel Equipment, Procedures and Process Limits for Leadfree Infineon Technologies AG, Regensburg, Germany Soldering

T. Ahrens, Fraunhofer ISIT, Itzehoe, Germany Best Papers Room: Offenbach Saal Japanese RCJ Reliability Symposium 2005, Japan Electromigration Lifetimes and Void Growth at low Cumulative Failure 8:30 Tutorial T5: O. Breitenstein, Max Planck Institute of Probability Microstructure Physics, Halle, Germany: H. Tsuchiya, S. Yokogawa Lock-in Infrared Thermography for IC Failure Analysis NEC Electronics Corporation, Nakahara, Kawasaki, Kanagawa, Japan Room: Mahler Saal

2006 IEEE International Reliability Physics Symposiu (IRPS), USA Recovery Effects in the Distributed Cycling of Flash Memories N. Mielke, H. P. Belgal, A. Fazio., Q. Meng Intel Corporation, Santa Clara, USA 10:00 Coffee Break

IPFA 2006, "The 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", Singapore

10:30 Tutorial T2: Robustness Validation - An Improved 17:00 Read Disturb in Flash memories: reliability case Approach to IC Qualification for High Reliability Automotive P. Tanduo, L. Cola, S. Testa, M. Menchise, A. Mervic Wednesday, October 4th Applications STMicroelectronics, Agrate Brianza, Italy

H. Keller, Consultant, Munich, Germany

A. Preussger, Infineon Technologies, Munich, Germany: 17:20 Power cycling tests for accelerated ageing of ultracapacitors Room: Offenbach Saal O. Briat, W. Lajnef, J-M. Vinassa, E. Woirgard Session C: Advanced Failure Analysis: Defect ENSEIRB Université Bordeaux 1, Talence Cedex, France Detection and Analysis 10:30 Tutorial T6: PICA Analysis Room: Offenbach Saal F. Stellari, IBM T.J. Watson Research Center, Yorktown Chairmen: Hights, NY, USA C. Boit, TU Berlin, Germany Room: Mahler Saal W. Mertin, University Duisburg-Essen, Germany Session C: Advanced Failure Analysis: P. Perdu, CNES, France

12:00 Lunch and Exhibition Defect Detection and Analysis Room: Mendelssohn Saal 8:20 Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation Chairmen: 1 1 1 1 2 A. Douin , V. Pouget , M. De Matos , D. Lewis , P. Perdu , C. Boit, TU Berlin, Berlin, Germany 1 Official opening of ESREF 2006 P. Fouillat W. Mertin, Universität Duisburg-Essen, Duisburg, Germany 1 University Bordeaux 1, Talence, France Room: Mendelssohn Saal P. Perdu, CNES, Toulouse Cedex, France 2 CNES, Toulouse, France

14:00 Conference Chairman: 16:00 Invited: L.J. Balk, Bergische Universität Wuppertal, Germany 8:40 Time gating imaging through thick silicon substrate: a new Failure analyses for debug and ramp-up of modern IC's step towards backside characterisation Ch. Burmer, S. Görlich 14:10 Keynote: J.M. Rampnoux, H. Michel, M.A. Salhi, S. Grauby, W. Infineon Technologies AG, Munich, Germany Reliability challenges in the nanoelectronics era Claeys, S. Dilhaire 1 1,2 A.J. van Roosmalen , G.Q. Zhang University of Bordeaux, Talence, France 1 Contact to Contacts or Silicide by use of Backside FIB Philips Semiconductors, Eindhoven, The Netherlands 16:40 2 Circuit Edit allowing to approach every Active Circuit Node Delft University of Technology, Delft, The Netherlands 9:00 Numerical evaluation of miniaturized resistive probe for R. Schlangen, P. Sadewater, U. Kerst, C. Boit quantitative thermal near-field microscopy of thermal Berlin University of Technology, Berlin, Germany 14:50 Best paper of IRPS conductivity Recovery Effects in the Distributed Cycling of Flash A. Altes, R. Tilgner, W. Walter Memories 17:00 Reduction of the Acquisition Time for CMOS Time-Resolved Infineon Technologies AG, Munich, Germany Photon Emission by Optimized IR Detection N. Mielke, H. P. Belgal, A. Fazio., Q. Meng R. Ispasoiu1, T. Crawford1, B. Johnston1, Ch. Shaw1, St. Intel Corporation, Santa Clara, USA 9:20 Electron BackScattered Diffraction (EBSD) use and Kasapi1, J. Goertz2, O. Rinaudo2, P. Ouimet2 1 applications in newest technologies development Credence System Corp. Sunnyvale, USA 1 2 1 15:10 Best paper of IPFA 2 S. Courtas , M. Grégoire , X. Federspiel , N. Bicais- Analysis of Failure Mechanism on Gate-Silicided and Gate- Freescale Semiconductor, Austin, USA Lepinay2, C. Wyon3 Non-Silicided, Drain/Source Silicide-blocked ESD 1Philips Semiconductors, Crolles, France 17:20 Lock-in thermal IR imaging using a solid immersion lens 2 NMOSFETs in a 65nm Bulk CMOS Technology 1 2 2 3 STMicroelectronics, Crolles, France 1 2 1 1 O. Breitenstein , F. Altmann , T. Riediger , D. Karg , V. 3 J.J. Li , D. Alvarez , K. Chatty , M.J. Abou-Khalil , R. 4 CEA-Leti, Grenoble, France 1 3 1 1 Gottschalk Gauthier , C. Russ , C. Seguin , and R. Halbach 1 1 Max Planck Institute of Microstructure Physics, Halle, IBM Semiconductor Research and Development Center, 9:40 Characterization of Photonic Devices by Secondary Electron Germany Essex Junction, USA 2 Potential Contrast 2 Infineon Technologies, Essex Junction, USA Fraunhofer Institute for Mechanics of Materials, Halle, M. Buzzo1,2, M. Ciappa2, W. Fichtner2 3 Germany 1 Infineon Technologies, Munich, Germany 3 Infineon Technologies, Villach, Austria Thermosensorik GmbH, Erlangen, Germany 2 4 Swiss Federal Institute of Technology (ETH) Zürich, ELMOS Semiconductor AG, Dortmund, Germany Switzerland 15:30 Coffee Break and Exhibition

Session A: Reliability for Transportation Session F: Reliability of High Power 17:40 Exhibition Semiconductors Room: Offenbach Saal Chairmen: Room: Mendelssohn Saal J. Moltoft, Hillerod, Denmark Chairmen: W. Wondrak, Daimler Chrysler AG, Sindelfingen Welcome Reception M. Ciappa, ETH Zürich, Switzerland 18:00 M. Rittner, Robert Bosch, Germany 16:00 Invited: Room: Grosser Saal Electrical steering of vehicles – fault-tolerant analysis and 8:20 Invited: design Reliability testing of high power semiconductors M. Blanke1, J.Sandberg Thomsen2 G. Coquery, INRETS, Arcueil Cedex, France 1Technical University of Denmark, Lyngby, Denmark 2Aalborg University, Aalborg, Denmark 9:00 Compact modelling and analysis of power-sharing unbalances in IGBT modules used in traction applications A. Castellazzi1,2, M. Ciappa1, W. Fichtner1, G. Lourdel2, M. 16:40 Part Average Analysis - A Tool for Reducing Failure Rates 2 in Automotive Electronics Mermet-Guyennet 1Swiss Federal Institute of Technology, Zürich, Switzerland M. Wagner, W. Unger, W. Wondrak 2 DaimlerChrysler AG, Böblingen, Germany ALSTOM-Power Electronics Associated Research Laboratory, Semeac, France 9:20 Thermal characterization and modeling of power hybrid 15:00 A complete RF power technology assessment for military converters for distributed power systems Session E: Reliability of MEMS applications P. Cova, N. Delmonte, R. Menozzi Room: Offenbach Saal C. Moreau, P. Le Helleye, D. Ruelloux University of Parma, Parma, Italy Chairmen: French MOD/DGA/DET/CELAR, Bruz, France I. De Wolf, IMEC, Belgium 9:40 Effects of metallization thickness of ceramic substrates on the B. Michel, Fraunhofer IZM, Germany reliability of power assemblies under high temperature cycling 1,2 1 2 3 L. Dupont , Z. Khatir , S. Lefebvre , S. Bontemps 10:30 Invited: 1 Session E: Reliability of New Technologies INTRETS-LTN, Arcueil Cedex, France Progress in Reliability Research in the Micro-Nano Region 2SATIE, Cachan cedex, France Room: Offenbach Saal 3 B. Wunderle Microsemi Power Modules Products, Merignac, France Fraunhofer IZM, Berlin, Germany Chairmen: I. De Wolf, IMEC, Belgium 11:10 Charging of Radiation Induced Defects in RF MEMS B. Michel, Fraunhofer IZM, Germany Dielectric Films M. Exarchos1, E. Papandreou1, P. Pons2, M. Lamhamdi2, 14:00 Reliability and Wearout Characterisation of LEDs 10:00 Coffee Break G.J. Papaioannou1, R. Plana2 P. Jacob1,2, A. Kunz1, G. Nicoletti1 1University of Athens, Athens, Greece 1Swiss Federal Labs for Materials Testing & Research, 2 LAAS CNRS, Toulouse Cedex, France Dübendorf, Switzerland 2 EM Microelectronic Marin SA, Marin, Switzerland

11:30 Charging-Effects in RF Capacitive Switches Influence of Session F: Reliability of High Power insulating layers composition 14:20 Strong electron irradiation hardness of 852 nm Al-free laser Semiconductors M. Lamhamdi1,2, J. Guastavino1, L. Boudou1, Y. Segui1, P. diodes Pons2, L. Bouscayrol2, R. Plana2 M. Boutillier1, O. Gauthier-Lafaye1, S. Bonnefont1, F. Lozes- Room: Mendelssohn Saal 1 2 2 3 1LGET UPS, Toulouse, France Dupuy , F.-J. Vermersch , M. Krakowski , O. Gilard Chairmen: 2 1 LAAS CNRS, Toulouse, France LAAS-CNRS, Toulouse Cedex, France M. Ciappa, ETH Zürich, Switzerland 2 III-V Lab, Thalès Research and Technolog, Palaiseau M. Rittner, Robert Bosch, Germany 11:50 High power reliability aspects on RF MEMS varactor design cedex, France 3 C. Palego, A. Pothier, A. Crunteanu, P. Blondy CNES, Toulouse cedex, France New Technique for the Measurement of the Static and of the 10:30 XLIM, Limoges, France Transient Junction Temperature in IGBT Devices under 14:40 High brightness GaN LEDs degradation during dc and Operating Conditions 1 1 1 pulsed stress D. Barlini , M. Ciappa , A. Castellazzi , M. Mermet- 1 2 2 2 2 1 M. Meneghini , S. Podda , A. Morelli , R. Pintus , L. Guyennet , W. Fichtner 1 1 2 1 1 Trevisanello , G. Meneghesso , M. Vanzi , E. Zanoni ETH Zurich, Zurich, Switzerland 1 2 University of Padova, Padova, Italy ALSTOM-Power Electronics Associated Research 12:10 Lunch Break 2 University of Cagliari, Cagliari, Italy Laboratory, Semeac, France

15:00 AlGaN/GaN HEMT Reliability Assessment by means of Low 10:50 Failure mechanism of Trench IGBT under short-circuit after Frequency Noise Measurements turn-off Session F: Reliability of High Power A. Sozza1,2,3, A. Curutchet3,4, Ch. Dua1, N. Malbert3, N. A. Benmansour, S. Azzopardi, JC. Martin, E. Woirgard 3 3 Labat , A. Touboul IXL – ENSEIRB, France Semiconductors (RF) 1 Alcatel/Thales III-V Lab, Marcoussis Cedex, France 2 Room: Mendelssohn Saal Università degli Studi di Padova, Padova, Italy Effect of a buffer layer in the epi-substrate region to boost the 3 11:10 Chairmen: Université Bordeaux 1, Talence Cedex, France avalanche capability of a 100V Schottky diode 4 M. Ciappa, ETH Zürich, Switzerland IEMN, Villeneuve d’Ascq, Franc A. Irace1, G. Breglio1, P. Spirito1, A. Bricconi2, D. Raffo2, L. M. Rittner, Robert Bosch, Germany Merlin2

1University of Naples "Frederico II", Napoli, Italy 14:00 Electrical parameters degradation of power RF LDMOS 2International Rectifier Corporation Italiana device after accelerated ageing tests M.A. Belaid, K. Ketata, M. Masmoudi, M. Gares, H. 11:30 Investigation of MOSFET failure in soft-switching conditions Maanane, J. Marcon 15:20 Coffee Break F. Iannuzzo, G. Busatto, C. Abbate University of Rouen, IUT Rouen, Mont Saint Aignan, France Università di Cassino, Cassino, Italy 14:20 Hot carrier reliability of RF N-LDMOS for S Band radar 11:50 Failure Analysis-assisted FMEA application 16:10 Tutorial T3: State of Art Gate Dielectric Reliability Modelling G. Cassanelli1, G. Mura2, F. Fantini1, M. Vanzi2, B. Plano3 1 1 1 2 1 M. Gares , H. Maanane , M. Masmoudi , P. Bertram , J. T. Pompl, Infineon Technologies, Munich, Germany: University of Modena and Reggio Emilia, Modena, Italy Marcon1, M.A. Belaid1, K. Mourgues1, C. Tolant2, P. Room: Mendelssohn Saal 2University of Cagliari, Cagliari, Italy 2 3 Eudeline Université Bordeaux 1, Talence, France 1University of Rouen, Mont Saint Aignan, France 16:10 Tutorial T4: Effective ESD Protection for Mixed Power BCD 2Thales Air Defence, Ymare, France Processes on Bulk and SOI Substrates A. Andreini, STMicroelectronics, Cornaredo (MI), Italy 14:40 Dynamic voltage stress effects on nMOS varactor Room: Offenbach Saal Chuanzhao Yu1, J.S. Yuan1, Engun Xiao2 1 University of Central Florida, Orlando, USA 2 University of Texas at Arlington, Arlington, USA

16:10 Workshop: EUropean Failure Analysis NETwork - EUFANET (Barcelona), Spain Organizer: F. Beaudoin, Credence, USA 2IES Castellarnau, Sabadell, Spain Session D: Failure Mechanisms in New Materials 3 P. Perdu, CNES, France and Transistors IMEC, Leuven, Belgium C. Boit, TU Berlin, Germany Room: Rossini Room: Mendelssohn Saal 11:10 Post-breakdown leakage resistance and its dependence on 16:10 Workshop: Reliability of Power Electronics and Devices – Is Chairmen: device area Silicon Carbide a Reliability Challenge? F. Fantini, University of Modena, Italy T.W. Chen1, C. Ito2, W. Loh2, R.W. Dutton1 Organizer: M. Ciappa, ETH Zürich, Switzerland H. Gieser, Fraunhofer IZM, Germany 1Stanford University, CA, USA Room: Seminarraum 2LSI Logic, Corp., Milpitas, USA 8:20 Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up 11:30 Reduced temperature dependence of hot carrier 1 1 1 1 1 M. Heer , V. Dubec , S. Bychikhin , D. Pogany , E. Gornik , degradation in deuterated nMOSFETs 2 2 3 M. Frank , A. Konrad , J. Schulz C. Salm1, A.J. Hof1, F.G. Kuper1,2, J. Schmitz1 1 Vienna University of Technology, Vienna, Austria 1University of Twente, AE Enschede, The Netherlands 2 X-FAB Semiconductor Foundries, Erfurt, Germany 2Philips Semiconductors, Nijmegen, The Netherlands 3 Melexis GmbH, Erfurt, Germany 11:50 Intrinsic bonding defects in transition metal elemental 8:40 Transient-induced latch-up test setup for wafer-level and oxides Thursday, October 5th package-level G. Lucovsky1, H. Seo1, L.B. Fleming1, M.D. Ulrich1,2, J. D. Bonfert1, H. Gieser1, H. Wolf1, M. Frank2, A. Konrad2, J. Lüning3, P. Lysaght4, G. Bersuker4 Schulz3 1North Carolina State University, Raleigh, USA 1Fraunhofer IZM, Munich, Germany 2Army Research Office, Research Triangle Park, USA 2X-FAB AG., Erfurt, Germany 3Stanford Synchrotron Research Laboratory, Menlo Park, 3Melexis GmbH., Erfurt, Germany USA 4 Session B: Physical Modeling and Simulation for International Sematech, Austin, USA 9:00 ESD protection structure qualification – a new approach for Reliability Prediction release for automotive applications Room: Offenbach Saal M. Goroll, W. Kanert, R. Pufall Chairmen: Infineon Technologies AG, Neubiberg, Germany E. Hammerl, Infineon Technologies, Germany 9:20 ESD Susceptibility of Submicron Air Gaps F.P. McCluskey, University of Maryland, USA 1 1 1 2 Session G: Packaging and Assembly Reliability H. Wolf , H. Gieser , D. Bonfert , M. Hauser 1 Room: Offenbach Saal 8:20 Invited: Fraunhofer IZM, Munich, Germany 2 Chairmen: Design in reliability in advanced CMOS technologies EPCOS AG, Munich, Germany Y. Danto, IXL Université Bordeaux, France CR. Parthasarathy1,3, M. Denais1, V. Huard2, G. Ribes1, D. G.Q. Zhang, Philips, The Netherlands Roy1, C. Guerin1, F. Perrier2, E. Vincent1, A. Bravaix3 9:40 Analysis of ESD failure mechanism in 65nm bulk CMOS 1 ESD NMOSFETs with ESD implant STMicroelectronics, Crolles, France 1 2 3 2 2 D. Alvarez , M.J. Abou-Khalil , C. Russ , K. Chatty , R. 10:30 Invited: Philips Semiconductors, Crolles, France 2 2 2 2 2 3 Modern IC packaging trends and their reliability implications L2MP-ISEN, UMR CNRS, Toulon, France Gauthier , D. Kontos , J. Li , C. Seguin , R. Halbach 1 R. Plieninger, M. Dittes, W. Mack, K. Pressel Infineon Technologies, Essex Junction, USA 2IBM, Essex Junction, USA Infineon Technologies AG, Regensburg, Germany 9:00 Multiscale modelling of multilayer substrates 3 1,2 2 1,3 R.L.J.M. Ubachs , O. van der Sluis , W.D. van Driel , G.Q. Infineon Technologies, Munich, Germany 1,3 11:10 The solder on rubber (SOR) interconnection design and its Zhang 1 reliability assessment based on shear strength test and finite Delft University of Technology, Delft, The Netherlands 2 element analysis Philips Applied Technologies, Eindhoven, The Netherlands 1 1 2 2 3 M.C. Yew , C.Y. Chou , C.S. Huang , W.K. Yang , K.N. Philips Semiconductors, Nijmegen, The Netherlands 10:00 Coffee Break Chiang1

1National Tsing Hua University, Hsinchu, Taiwan 9:20 Improving Performance and Reliability of NOR-Flash arrays 2Advanced Chip Engineering Technology Inc., Hsinchu , by using Pulsed Operation 1 2 1 Taiwan A. Chimenton , F. Irrera , P. Olivo 1 Università degli studi di Ferrara, Ferrara, Italy Session D: Failure Mechanisms in New Materials 2 11:30 Reliability Modelling for Packages in Flexible End-Products Università “La Sapienza”, Roma, Italy and Transistors W.D. van Driel1,2, O. van der Sluis3, D.G. Yang1, R.

Room: Mendelssohn Saal Ubachs2,3, C. Zenz4, G. Aflenzer4, G.Q. Zhang1,2 9:40 Electro-thermal short pulsed simulation for SOI technology 1 1 1 1 2 2 Chairmen: Philips Semiconductors, AE Nijmegen, The Netherlands C. Entringer , P. Flatresse , P. Galy , F. Azais , P. Nouet 2 1 F. Fantini, University of Modena, Italy Delft University of Technology, Delft, The Netherlands STMicroelectronics, Crolles Cedex, France 3 2 H. Gieser, Fraunhofer IZM, Germany Philips Applied Technologies, AE Eindhoven, The Université Montpellier II, Montpellier Cedex, France Netherlands

10:30 Gate voltage and oxide thickness dependence of 4Philips Semiconductors Gratcorn GmbH, Gratcorn, Austria

progressive wear-out of ultra-thin gate oxides

T. Pompl, A. Kerber, M. Röhner, M. Kerber 11:50 Improved Physical Understanding of Intermittent Failure in

Infineon Technologies AG, Munich, Germany Continuous Monitoring Method

W.C. Maia Filho1,2, M. Brizoux1, H. Frémont2, Y. Danto2

10:50 FinFET and MOSFET Preliminary Comparison of Gate 1Thales Services SAS, Orsay, France

Oxide Reliability 2Université Bordeaux 1, Talence cedex, France 2 1 1 1 R. Fernández , R. Rodriguez , M. Nafria , X. Aymerich , B. 3 3 Kaczer , G. Groeseneken 1 Universitat Autònoma de Barcelona, Bellaterra 12:10 Lunch Break 15:20 Initial Stage of Silver Electrochemical Migration Degradation 1Université Bordeaux 1, Talence, France S. Yang, J. Wu, A. Christou 2CNES-Thales laboratory, Toulouse, France Session D: Failure Mechanisms in New Materials University of Maryland, Maryland, USA 3LAAS/CNRS, Toulouse Cedex, France and Transistors Room: Mendelssohn Saal P8 Descrambling and data reading techniques for Flash- Chairmen: EEPROM memories. Application to smart cards C. DeNardi1, R. Desplats1, P. Perdu1, J.-L. Gauffier2, C. F. Fantini, University of Modena, Italy 15:40 Coffee Break 3 H. Gieser, Fraunhofer IZM, Germany Guérin 1 CNES, Toulouse Cedex, France 2LNMO, Toulouse cedex, France 14:00 Invited: 3 Electromigration failure distributions of dual damascene Cu / DGA/CELAR, Bruz cedex, France low-k interconnects Poster Session A.S. Oates, S.C. Lee Room: Wandelhalle P9 Fault diagnosis technology based on transistor behavior analysis for physical analysis Taiwan Semiconductor Manufacturing Corporation Ltd., 1 2 Hsinchu, Taiwan M. Sanada , Y. Yoshizawa 16:10 Chairman: 1Kochi University of Technology, Kochi, Japan 2 14:40 Development of Highly Accelerated Electromigration Test E. Langer, AMD Saxony Manufacturing GmbH, Dresden, Semiconductor Technology Academic Research Center, Cher Ming Tan1, Wei Li1, Kok Tong Tan2, Frankie Low2 Germany Yokohama, Japan 1Nanyang Technological University, Singapore 2Systems on Silicon Manufacturing Co. Pte. Ltd., Singapore

15:00 The effect of Cu diffusion on the TDDB behavior in low-k Electrical steering of vehicles – fault-tolerant analysis and design: Failure Mechanisms in New Materials and Transistors: interlevel dielectrics P1 Reliability Estimation of Aeronautic Component by P10 Experimental investigation on the impact of stress free J.R. Lloyd, C.E. Murray, S. Ponoth, S. Cohen, E. Liniger Accelerated Tests temperature on the electromigration performance of copper IBM T.J. Watson Research Center, Yorktown Heights, USA St. Charruau1, F. Guérin2, J. Hernández Dominguez3, J. dual damascene submicron interconnect Berthon1 A. Roy, Cher Ming Tan 15:20 A New High-Voltage Tolerant I/O for improving ESD 1Thales Avionics, Saint Médard en Jalles Cedex, France Nanyang Technological University, Singapore robustness 2LASQUO-University of Angers, Angers, France J.T. Jang, Y.C. Kim, W.H. Bong, E.K. Kwon, B.J. Kwon, J.S. 3 CETECOM, (Campanillas), Málaga, Spain P11 Hot-carrier-induced degradation of drain current hysteresis Jeon, H.G. Kim, I.H. Son and transients in thin gate oxide floating body partially Samsung Electronics, Gyeonggi-Do, Korea P2 ATPG Scan Logic Failure Analysis: a case study of logic ICs depleted SOI nMOSFETs – fault isolation, defect mechanism identification and yield J.M. Rafi1, E. Simoen2, K. Hayama3, A. Mercha2, F. improvement Campabadal1, H. Ohyama3, C. Claeys2,4 L. Gao, C. Burmer, F. Siegelin 1Centro National de Microelectrónica (IBM-CNM-CSIC), Infineon Technologies AG, Munich, Germany Bellaterra (Barcelona), Spain 2IMEC, Leuven, Belgium 3Kumamoto National College of Technology, Kumamoto, Japan Session G: Packaging and Assembly Reliability 4 Room: Offenbach Saal Advanced Failure Analysis: Defect Detection and Analysis: KU Leuven, Leuven, Belgium

Chairmen: P3 A 3D Analysis Technique for Detecting Trace Metal P12 Novel ESD Strategy for High Voltage Non-Volatile Y. Danto, IXL Université Bordeaux, France Contamination Programming Pin Application G.Q. Zhang, Philips, The Netherlands Y. Goto, T. Higuchi Kyoung-Sik Im, Jae-Hyok Ko, Suk-Jin Kim, Chan-Hee Jeon, Toyota Motor Corporation, Toyota, Aichi, Japan Chang-Su Kim, Ki-Tae Lee, Han-Gu Kim, Il-Hun Son 14:00 Characterisation of IC packaging interfaces and loading Samsung Electronics Co., Ltd, Gyeonggi-Do, Korea effects P4 Physical-to-Logical Mapping of Emission Data using Place- 1 1 1 1 2 H.C. Yeo , N. Guo , H. Du , W.M. Huang , X.M. Jian and-Route 1 P13 Degradation of Static and Dynamic Behavior of CMOS Nanyang Technological University, Singapore R.A. Nicholson, A. Suri 2 Inverters during Constant and Pulsed Voltage Stress Warwick University, United Kingdom Credence Systems Corporation, Milpitas, CA, USA S. Gerardin1, A. Griffoni1, A. Cester1, A. Paccagnella1, G. Ghidini2 14:20 Electromigration degradation mechanism for Pb free flip-chip P5 Evaluation of Scanning Capacitance Microscopy Sample 1Universitá di Padova, Padova, Italy micro solder bumps Preparation by Focused Ion Beam 2STMicroelectronics, Agrate Brianza, Italy T. Miyazaki, T. Omata N. Rodriguez1,2, J. Adrian1, C. Grosjean1, G. Haller1, C. 2 2 NEC Electronics Corporation, Kawasaki, Kanagawa, Japan Girardeaux , A. Portavoce P14 A Study of Cu/Low-k Stress-induced Voiding at Via Bottom 1STMicroelectronics, RCCAL, Rousse, France 2 and Its Microstructure Effect 14:40 Structural Reliability Assessment of Multi-Stack Package Université Paul Cézanne Aix, Marseille, France R.C.J. Wang1,2, C.C. Lee2, L.D. Chen1, Kenneth Wu1, K.S. (MSP) under High Temperature Storage (HTS) testing Chang-Liao2 condition P6 Localization and physical analysis of a complex SRAM 1Taiwan Semiconductor Manufacturing Company, Hsin- S.Y. Yang, W.J. Lee, S.H. Jeong, S.J. Lee failure in 90nm Technology 1 1 2 1 Chu, Taiwan, R.O.C. Samsung Electronics Co., LTD, Asan-City, Z. Qian , F. Siegelin , B. Tippelt , St. Müller 2National Tsing-Hua University, Hsin-Chu, Taiwan, ROC Chungcheongnam-Do, Republic of Korea 1Infineon Technology, Munich, Germany 2 Qimonda Dresden, Dresden, Germany P15 Delamination Analysis of Cu/low-k Technology Subjected to 15:00 Reliability of High Temperature Solder Alternatives 1 1 1 2 Chemical-Mechanical Polishing Process Conditions F.P. McCluskey , M. Dash , Z. Wang , D. Huff P7 Application of various optical techniques for ESD defect 1 1,2 3 1 C. Yuan , W.D. van Driel , R. van Silfhout , O. van der University of Maryland, Maryland, USA localization 3 3 2 2 2 Sluis , R.A.B. Engelen , L.J. Ernst , F. van Keulen , G.Q. Center for Power Electronic Systems, Blacksburg, USA F. Essely1, F. Darracq1, V. Pouget1, M. Remmach1, F. 1,2 2 2 3 2 1 Zhang Beaudoin , N. Guitard , M. Bafleur , P. Perdu , A. Touboul , 1Delft University of Technology, CD Delft, The Netherlands D. Lewis1 2Philips Semiconductors, The Netherlands Golubovic, N. Stojadinovic Y. Sutou2, R. Kainuma2, K. Ishida2 3Philips Applied Technologies, The Netherlands University of Nis, Nis, Serbia and Montenegro 1Toyota Central R&D Laboratories, Aichi, Japan 2Tohoku University, Sendai, Japan P24 Temperature Measurement of Series Resistance and Devices on Power Packs based on On-state Voltage Drop Reliability of New Technologies: Monitoring at High Current X. Perpina1, J.F. Serviere1, J. Saez1, D. Barlini1,3, M. P16 Impact on the back gate degradation in partially depleted Mermet-Guyennet1, J. Millán2 17:00 Steering Committee Meeting SOI n-MOSFETs by 2-MeV Electron Irradiation 1Alstom Transport Tarbes, Semeac, France K. Hayama1, K. Takakura1, K. Shigaki1, H. Ohyama1, J.M. 2 Room: Seminarraum 2 3 3 3,4 CNM-CSIC, Bellaterra (Barcelona), Span, Rafi , A. Mercha , E. Simoen , C. Claeys 3Swiss Federal Institute of Technology (ETH), Zurich, 1 Kumamoto National College of Technology, Kumamoto, Switzerland

Japan 2 Centro Nacional de Microelectrònica (IMB-CNM-CSIC), P25 Study of performance degradations in DC-DC converter due 19:00 Bellaterra (Barcelona), Spain to hot carrier stress by simulation Conference Dinner 3 IMEC, Leuven, Belgium, C. Yu, L. Jiang, J.S. Yuan 4 Wuppertaler Brauhaus KU Leuven, Belgium University of Central Florida, Orlando, USA

P17 Kelvin Probe Force Microscopy - An appropriate tool for the P26 A new method to characterize the thermomechanical electrical characterization of LED heterostructures response of multilayered structures in power electronics 1,2 2 1 W. Bergbauer , T. Lutz , W. Frammelsberger , G. P. Zimprich1, T. Licht2, B. Weiss1 1 Benstetter 1University Vienna, Vienna, Austria 1 University of Applied Sciences Deggendorf, Deggendorf, 2Infineon Technologies AG, Warstein, Germany Friday, October 6th Germany 2 OSRAM Opto Semiconductors GmbH, Regensburg, P27 The High Frequency Behavior of High Voltage and Current Germany IGBT Modules C. Abbate1, G. Busatto1, L. Fratelli2, F. Iannuzzo1 P18 Gamma radiation effects on RF MEMS capacitive switches 1University of Cassino, Cassino, Italy Industrial Session 1 1 1 2 A. Crunteanu , A. Pothier , P. Blondy , F. Dumas-Bouchiat , 2AnsaldoBreda Spa, Napoli, Italy 2 2 2 3 Room: Mendelssohn Saal C. Champeaux , A. Catherinot , P. Tristant , O. Vendier , C. 3 3 4 Drevon , J.L. Cazaux , L. Marchand Experimental Study of Power MOSFET's Gate Damage in 1 P28 XLIM Research Institute – UMR CNRS, Université de Radiation Environment 8:30 Exhibitors present latest development and results of Limoges, Limoges Cedex, France G. Busatto1, F. Iannuzzo1, A. Porzio1, A. Sanseverino1, F. interesting applications 2 SPCTS, UMR CNRS, Université Limoges, Limoges Cedex, Velardi1, G. Currò2 France 1Università degli Studi di Cassino, Cassino, Italy 3 Alcatel Alenia Space, Toulouse Cedex 1, France 2STMicroelectronics, Catania, Italy 4 ESTEC-ESA, Noordwijk, The Netherlands

P29 Hot-carrier degradation analysis based on ring oscillators 10:00 Coffee Break P19 Microactuators based on porous silicon explosion and J. Wang1,2, E. Olthof2, W. Metselaar1 combustion processes 1TU Delft, Delft, The Netherlands S.K. Lazarouk, A.V. Dolbik, V.A. Labunov, V.E. Borisenko 2Philips Semiconductors, AE Nijmegen, The Netherlands Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus P30 New Experimental Findings on Hot-Carrier-Induced Degradation in Lateral DMOS Transistors Closing Session P20 Prospects of Mn-doped ZnGeP2 for spintronics In Kyung Lee, Se Re Na Yun, Kyosun Kim, Chon Gu Yu, 1,2 1 1 Room: Mendelssohn Saal A.V. Krivosheeva , V.L. Shaposhnikov , V.V. Lyskouski , Jong Tae Park 1 2 2 V.E. Borisenko , F. Arnaud d' Avitaya , J.-L. Lazzari University of Incheon, Incheon, Korea 10:30 Best paper of Japanese RCJ Reliability Symposium 1 Belarusian State University of Informatics and Electromigration Lifetimes and Void Growth at low Radioelectronics, Minsk, Belarus Cumulative Failure Probability 2 CRMC-N, Marseille cedex, France H. Tsuchiya, S. Yokogawa NEC Electronics Corporation, Nakahara, Kawasaki, P21 Degradation Induced by 2-MeV Alpha Particles on Packaging and Assembly Reliability: Kanagawa, Japan A1GaN/GaN High Electron Mobility Transistors F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. P31 Use of signal processing imaging for the study of a 3D 10:50 Keynote Meneghesso, E. Zanoni, A. Paccagnella package in harsh environment Failure localization and failure characterization in on-chip University of Padova, Padova, Italy J. Augereau, Y. Ousten, B. Levrier, L. Bechou copper interconnect structures IXL – UMR5818 – ENSEIRB, Talence, France E. Zschech, C. Hobert, E. Langer, H.-J. Engelmann AMD Saxony Manufacturing GmbH, Dresden, Germany P32 Defect Detection in Multilayer Ceramic Capacitors 1,3 1 1 1 V. Krieger , W. Wondrak , A. Dehbi , W. Bartel , Y. 11:30 Announcement of ESREF 2006 Best Papers Award 2 2 Reliability of High Power Semiconductors Ousten , B. Levrier 1DaimlerChrysler AG, Böblingen, Germany 2 11:45 Conference closing P22 Device level electrical-thermal-stress coupled-field modeling Université Bordeaux, Talence Cedex, France Guan Yu Huang, Cher Ming Tan 3 Université Montpellier II, Montpellier Cedex, France Nanyang Technology University, Singapore

P33 Pb-free High Temperature Solders for Power Device P23 NBT stress-induced degradation and lifetime estimation in p- Packaging 12:00 End of conference channel power VDMOSFETs Y. Yamada1, Y. Takaku2, Y. Yagi1, Y. Nishibe1, I. Ohnuma2, D. Dankovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Directions

Wuppertal is located close to three airports (Düsseldorf, Dortmund and Cologne), and is on the highspeed ICE and InterCity rail network. Wherever you are coming from, it should be no problem.

Düsseldorf Airport

Arriving at Düsseldorf Airport you take train S 7, leaving from platform 11, to Düsseldorf Hauptbahnhof (main train station). There you change to train S 8 which leaves from platform 13. You will arrive at Wuppertal-Elberfeld (Wuppertal Hauptbahnhof) within one hour. You need a ticket B of the Verkehrsverbund Rhein-Ruhr (VRR) for 3,80 €. The price for a taxi ride from Düsseldorf Airport to Wuppertal is about 60,00 €.

Dortmund Airport Arriving at Dortmund Airport you go by Airport Bus FBus to Holzwickede Bahnhof (train station). After a 3 minutes’ walk to platform 3 you change into a Regional Express Train (RE) to Wuppertal-Elberfeld (Wuppertal Hauptbahnhof). The way from Dortmund Airport to Wuppertal Hauptbahnhof will take about 80 minutes.

Cologne Airport List of sponsors: Arriving at Cologne Airport you can either take train S 13 to Köln Hauptbahnhof (Cologne main train station) and change into an InterCityExpress (ICE) to Wuppertal-Elberfeld (Wuppertal Hauptbahnhof) or you can go by Regional Express (RE) to Köln Messe/Deutz and change to a train of the Regional Bahn (RB) to Wuppertal. The way from Cologne Airport to Wuppertal will take about 70 minutes. The price for a taxi ride from Cologne Airport to Wuppertal is about 85 €.

Frankfurt Airport Deutsche Forschungsgemeinschaft, Kennedyallee 40, Arriving at Frankfurt Airport you can go by InterCityExpress leaving 53175 Bonn, Germany from platform 6 or 7 to Wuppertal within about two hours. It may be necessary to change at Köln Hauptbahnhof (Cologne main train station).

Social Programme Siemens AG, Otto-Hahn-Ring 6, 81739 Munich, Wuppertal, a town full of famous tourist attractions, welcomes participants and their companions warmly. The city is located along the Germany valley of the river Wupper in the “Bergisches Land”, a lovely landscape with a lot of hills and forests. Furthermore it is situated close to the cities of Cologne, Dusseldorf, and Essen which can be reached within little more than half an hour.

The ESREF Organization will organize trips in small groups depending on individual wishes. Furthermore accompanying persons are cordially invited to participate at the conference dinner in the Brauhaus (brewery house) of Wuppertal where they can enjoy typical German food, “Dixietainment” by the band “Powerkraut” as well as the tasting of wonderful Mosel wines from the famous wine-growing estate Stadtsparkasse Wuppertal, Islandufer 1, 42103 “Immich Batterieberg”. Wuppertal,

Social programme fee: 40,- € for conference dinner Germany + expenses for organized trips