Part 1. Silicon Tetrachloride As a Coupling Reagent for Amide Bond Formation. Part II. Synthesis of Benzophosphole. L. T. L
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Process for Producing Fused-Ring Aromatic Compound, and Conjugated Polymer
(19) TZZ ¥__T (11) EP 2 774 931 A1 (12) EUROPEAN PATENT APPLICATION published in accordance with Art. 153(4) EPC (43) Date of publication: (51) Int Cl.: 10.09.2014 Bulletin 2014/37 C07F 19/00 (2006.01) C07F 7/08 (2006.01) C07F 7/22 (2006.01) C07F 7/30 (2006.01) (2006.01) (2014.01) (21) Application number: 12844675.4 C08G 61/12 H01L 31/04 (22) Date of filing: 02.11.2012 (86) International application number: PCT/JP2012/078517 (87) International publication number: WO 2013/065836 (10.05.2013 Gazette 2013/19) (84) Designated Contracting States: • KAWAI, Jyunya AL AT BE BG CH CY CZ DE DK EE ES FI FR GB Yokohama-shi GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO Kanagawa 227-8502 (JP) PL PT RO RS SE SI SK SM TR •SATO,Wataru Yokohama-shi (30) Priority: 02.11.2011 JP 2011241498 Kanagawa 227-8502 (JP) 29.11.2011 JP 2011260973 • SATAKE, Kenichi Yokohama-shi (71) Applicant: Mitsubishi Chemical Corporation Kanagawa 227-8502 (JP) Chiyoda-ku • FURUYA, Mitsunori Tokyo 100-8251 (JP) Yokohama-shi Kanagawa 227-8502 (JP) (72) Inventors: • FUJITA, Rieko (74) Representative: HOFFMANN EITLE Yokohama-shi Patent- und Rechtsanwälte Kanagawa 227-8502 (JP) Arabellastrasse 4 81925 München (DE) (54) PROCESS FOR PRODUCING FUSED-RING AROMATIC COMPOUND, AND CONJUGATED POLYMER (57) The invention addresses a problem of purifying having n active groups (wherein n is an integer of 1 or a monomer to be a precursor according to a simpler and more and 4 or less), which comprises bringing a compo- milder method so as to obtain a polymer having a higher sition containing the condensed polycyclic aromatic com- molecular weight. -
The Preparation and Reactions of the Lower Chlorides and Oxychlorides of Silicon Joseph Bradley Quig Iowa State College
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1926 The preparation and reactions of the lower chlorides and oxychlorides of silicon Joseph Bradley Quig Iowa State College Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Inorganic Chemistry Commons Recommended Citation Quig, Joseph Bradley, "The preparation and reactions of the lower chlorides and oxychlorides of silicon " (1926). Retrospective Theses and Dissertations. 14278. https://lib.dr.iastate.edu/rtd/14278 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UlVli films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and impiroper alignment can adversely affect reproduction. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overiaps. -
SAFETY DATA SHEET Silicon Tetrachloride
SAFETY DATA SHEET Silicon Tetrachloride Section 1. Identification GHS product identifier : Silicon Tetrachloride Chemical name : silicon tetrachloride Other means of : Silane, tetrachloro-; Silicon chloride; Tetrachlorosilane; Silicon(Ⅳ)chloride identification Product type : Liquid. Product use : Synthetic/Analytical chemistry. Synonym : Silane, tetrachloro-; Silicon chloride; Tetrachlorosilane; Silicon(Ⅳ)chloride SDS # : 001075 Supplier's details : Airgas USA, LLC and its affiliates 259 North Radnor-Chester Road Suite 100 Radnor, PA 19087-5283 1-610-687-5253 24-hour telephone : 1-866-734-3438 Section 2. Hazards identification OSHA/HCS status : This material is considered hazardous by the OSHA Hazard Communication Standard (29 CFR 1910.1200). Classification of the : ACUTE TOXICITY (inhalation) - Category 2 substance or mixture SKIN IRRITATION - Category 2 EYE IRRITATION - Category 2A SPECIFIC TARGET ORGAN TOXICITY (SINGLE EXPOSURE) (Respiratory tract irritation) - Category 3 GHS label elements Hazard pictograms : Signal word : Danger Hazard statements : Fatal if inhaled. Causes serious eye irritation. Causes skin irritation. May cause respiratory irritation. Precautionary statements General : Read label before use. Keep out of reach of children. If medical advice is needed, have product container or label at hand. Prevention : Wear eye or face protection. In case of inadequate ventilation wear respiratory protection. Use only outdoors or in a well-ventilated area. Do not breathe vapor. Wash thoroughly after handling. Response : IF INHALED: Remove person to fresh air and keep comfortable for breathing. Immediately call a POISON CENTER or doctor. Take off contaminated clothing and wash it before reuse. IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing. If eye irritation persists: Get medical advice or attention. -
Environmentsensitive Fluorescent Probe: a Benzophosphole Oxide with an Electrondonating Substituent
Angewandte Chemie International Edition:DOI:10.1002/anie.201500229 Phosphorus Heterocycles German Edition:DOI:10.1002/ange.201500229 Environment-SensitiveFluorescent Probe:ABenzophosphole Oxide with an Electron-Donating Substituent** Eriko Yamaguchi, Chenguang Wang,Aiko Fukazawa,* Masayasu Taki, Yoshikatsu Sato, Taeko Sasaki, Minako Ueda, Narie Sasaki, Tetsuya Higashiyama,* and Shigehiro Yamaguchi* Abstract: Electron-donating aryl groups were attached to phosphine oxide and sulfide derivatives exhibit desirably high electron-accepting benzophosphole skeletons.Among several thermal and chemical stability.Taking advantage of these derivatives thus prepared, one benzophosphole oxide was features,phosphole-based materials have been widely applied particularly interesting,asitretained high fluorescence quan- in organic electronics,[1g,h] including organic light-emitting tum yields even in polar and protic solvents.This phosphole- diodes[3,4] and photovoltaics.[5] However,biological applica- based compound exhibited adrastic color change of its tions have not yet been explored exhaustively.Inthis context, fluorescence spectrum as afunction of the solvent polarity, we would like to disclose here the successful development of while the absorption spectra remained virtually unchanged. highly fluorescent phosphole derivatives,and demonstrate Capitalizing on these features,this phosphole-based compound their potential as fluorescent bioimaging probes. was used to stain adipocytes,inwhich the polarity of Thecombination of an electron-accepting p-skeleton -
Synthesis and Characterization of Organic Silicates Using Appropriate Catalysts Adam H
IJISET - International Journal of Innovative Science, Engineering & Technology, Vol. 3 Issue 1, January 2016. www.ijiset.com ISSN 2348 – 7968 Synthesis and Characterization of Organic Silicates Using Appropriate Catalysts Adam H. E. Yousif a, Omer . Y. Alhusseinb ,Elgorashi.A.M. Elgorashic ,Mohammed S. Alic and wagdi .I. Eldogdugd a Department of Chemistry, Faculty of Education, Alfashir University , Alfashir, Sudan. b Department of Chemistry, Faculty of Science Albaha University, Albaha, KSA c Department of Chemistry, Faculty of Science, Sudan University, Khartoum, Sudan. d Department of Chemistry, University College in Al-Jamoum, Umm Al-Qura University, KSA Abstract: Tetraethoxysilane (TEOS) was prepared from elemental silicon and liquid ethanol using silica or alumina supported copper oxide catalysts .The effects of catalyst, reaction conditions were studied . Moreover, the product characterized by IR,GLC,H1NMR and scanning electron microscope (SEM), also Silica and alumina supported copper oxide catalysts were prepared and characterized by the analytical and spectroscopic methods. The results indicated that silica or alumina supported copper oxide were effective catalysts for the direct synthesis of tetraethoxysilane . Moreover, tetraethoxysilane has been isolated in high yield and purity as showed by H1NMR and GLC analyses. Keywords: Tetraethoxysilane, Catalyst, Elemental Silicon, Ethanol. Crrospondin author: email: [email protected] 1. Introduction Ethyl silicates is a chemical substance which has been known to be excellent precursor (starting material) for production of metal oxides [1] which are vital in electronics and ceramics industries for fabrication of electronics, glassy and ceramic materials. Sol – gel process has been used as novel method for preparation of these oxides materials from ethyl silicates [2]. -
On the Enhancement of Silicon Chemical Vapor Deposition Rates at Low Temperatures
Lawrence Berkeley National Laboratory Recent Work Title ON THE ENHANCEMENT OF SILICON CHEMICAL VAPOR DEPOSITION RATES AT LOW TEMPERATURES Permalink https://escholarship.org/uc/item/9pp8142m Author Chang, Chin-An. Publication Date 1976-08-01 eScholarship.org Powered by the California Digital Library University of California u u \J ·i,) "'i .j u ;;) 6 6 9 t({!,-6S Published in Journal of Electrochemical LBL-3938 Rev. Society, Vol.123, No. 8, 1245- 1247 Preprint C. I {August 1976) ON THE ENHANCEMENT OF SILICON CHEMICAL VAPOR DEPOSITION RATES AT LOW TEMPERATURES Chin-An Chang· ·._\,::~FL~:?·{ ;'-~"'-;!'~·~ August 1976 ~. t ~; ... · j\/{ ~;:""" ·...J · r ~-.:, .~· r.-.:... c·. - · r\1 Prepared for the U •. S. Energy Research and. Development Administration under Contract W -7405-ENG -48 For Reference Not to be taken from this room DISCLAIMER This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain conect information, neither the United States Government nor any agency thereof, nor the Regents of the University of California, nor any of their employees, makes any wananty, express or implied, or assumes any legal responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by its trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or the Regents of the University of California. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or the Regents of the University of California. -
Synthesis and Applications in Fluorescence Imaging
Phosphole P Oxide Containing π Electron Materials: Synthesis and ─ Applications─ in Fluorescence─ Imaging Shigehiro Yamaguchi, 1,2* Aiko Fukazawa, 2 and Masayasu Taki 1 1* Institute of Transformative Bio ─ Molecules (WPI ─ ITbM), Nagoya University 2* Furo, Chikusa, Nagoya 464 ─ 8602, Japan Department of Chemistry, Graduate School of Science, and Integrated Research Consortium on Chemical Sciences (IRCCS), Nagoya University Furo, Chikusa, Nagoya 464 ─ 8602, Japan (Received September 8, 2017; E ─ mail: [email protected]) Abstract: Phosphole P ─ oxide is a useful building block for π ─ conjugated materials due to its nonaromatic and electron ─ accepting character. We have synthesized a series of ring ─ fused derivatives of phosphole P ─ oxide based on the intramolecular nucleophilic cyclization of appropriate alkyne precursors or radical phosphany- lations. Some of the thus obtained compounds exhibited intriguing uorescence properties and were applied to uorescence imaging. A donor ─ acceptor ─ type benzo[b]phosphole P ─ oxide with a (diphenylamino)phenyl group exhibited large solvatochromism in its uorescence spectra, and could hence be used as a staining agent for lipid droplets. C ─ Naphox and PB430, which consist of fully ring ─ fused π ─ conjugated ladder ─ type scaf- folds, exhibited outstanding photostability and their absorption and emission properties were suitable for super ─ resolution STED imaging. Moreover, using PB430 ─ conjugated antibodies, we carried out a 3 ─ D recon- struction of the STED images and developed -
Influence of Silicon on High-Temperature
Solar Energy Materials & Solar Cells 160 (2017) 410–417 Contents lists available at ScienceDirect Solar Energy Materials & Solar Cells journal homepage: www.elsevier.com/locate/solmat Influence of silicon on high-temperature (600 °C) chlorosilane interactions with iron crossmark ⁎ Josh Allera, , Nolan Swainb, Michael Babera, Greg Tatarb, Nathan Jacobsonc, Paul Gannonb a Mechanical and Industrial Engineering, Montana State University, Bozeman, MT 59717, USA b Chemical and Biological Engineering, Montana State University, Bozeman, MT 59717, USA c NASA Glenn Research Center, Cleveland, OH 44135, USA ARTICLE INFO ABSTRACT Keywords: High-temperature ( > 500 °C) chlorosilane gas streams are prevalent in the manufacture of polycrystalline Iron silicon, the feedstock for silicon-based solar panels and electronics. This study investigated the influence of Chlorosilane metallurgical grade silicon on the corrosion behavior of pure iron in these types of environments. The Silicon experiment included exposing pure iron samples at 600 °C to a silicon tetrachloride/hydrogen input gas mixture Silicon tetrachloride with and without embedding the samples in silicon. The samples in a packed bed of silicon had significantly Iron silicide higher mass gains compared to samples not in a packed bed. Comparison to diffusion studies suggest that the Corrosion increase in mass gain of embedded samples is due to a higher silicon activity from the gas phase reaction with silicon. The experimental results were supported by chemical equilibrium calculations which showed that more- active trichlorosilane and dichlorosilane species are formed from silicon tetrachloride in silicon packed bed conditions. 1. Introduction most common material added to a chlorosilane gas stream is silicon. Silicon may be present in a fluidized bed reactor used to convert silicon Chlorosilane species are used at high temperatures in the refine- tetrachloride to trichlorosilane or deposition equipment used to deposit ment, manufacture, and deposition of silicon and silicon-containing silicon on a wafer. -
Program 1..154
The 97th Annual Meeting of CSJ Program Chair: INOUE, Haruo(15:30~15:55) Room S1 1S1- 15 Medium and Long-Term Program Lecture Artificial Photosynthesis of Ammonia(RIES, Hokkaido Univ.)○MISAWA, Hiroaki (15:30~15:55) Fourth Building, Section B J11 Chair: INOUE, Haruo(15:55~16:20) 1S1- 16 Medium and Long-Term Program Lecture Mechanism of water-splitting by photosystem II using the energy of visible light(Grad. Sustainable and Functional Redox Chemistry Sch. Nat. Sci. Technol., Okayama Univ.)○SHEN, Jian-ren(15:55~ ) Thursday, March 16, AM 16:20 (9:30 ~9:35 ) Chair: TAMIAKI, Hitoshi(16:20~16:45) 1S1- 01 Special Program Lecture Opening Remarks(Sch. Mater. & 1S1- 17 Medium and Long-Term Program Lecture Excited State Chem. Tech., Tokyo Tech.)○INAGI, Shinsuke(09:30~09:35) Molecular Dynamics of Natural and Artificial Photosynthesis(Sch. Sci. Tech., Kwansei Gakuin Univ.)○HASHIMOTO, Hideki(16:20~16:45) Chair: ATOBE, Mahito(9:35 ~10:50) 1S1- 02 Special Program Lecture Polymer Redox Chemistry toward Chair: ISHITANI, Osamu(16:45~17:10) Functional Materials(Sch. Mater. & Chem. Tech., Tokyo Tech.)○INAGI, 1S1- 18 Medium and Long-Term Program Lecture Recent pro- Shinsuke(09:35~09:50) gress on artificial photosynthesis system based on semiconductor photocata- 1S1- 03 Special Program Lecture Organic Redox Chemistry Enables lysts(Grad. Sch. Eng., Kyoto Univ.)○ABE, Ryu(16:45~17:10) Automated Solution-Phase Synthesis of Oligosaccharides(Grad. Sch. Eng., Tottori Univ.)○NOKAMI, Toshiki(09:50~10:10) (17:10~17:20) 1S1- 04 Special Program Lecture Redox Regulation of Functional 1S1- 19 Medium and Long-Term Program Lecture Closing re- Dyes and Their Applications to Optoelectronic Devices(Fac. -
Silicon Tetrachloride Safety Data Sheet P-4824 This SDS Conforms to U.S
Silicon tetrachloride Safety Data Sheet P-4824 This SDS conforms to U.S. Code of Federal Regulations 29 CFR 1910.1200, Hazard Communication. Issue date: 01/01/1984 Revision date: 03/12/2021 Supersedes: 12/12/2016 SECTION: 1. Product and company identification 1.1. Product identifier Product form : Substance Substance name : Silicon tetrachloride CAS-No. : 10026-04-7 Formula : Cl4Si Other means of identification : Chlorosilane A-160 / Tetrachlorosilane / Silicon Chloride / Silicon Tetrachloride 1.2. Relevant identified uses of the substance or mixture and uses advised against Use of the substance/mixture : Industrial use; Use as directed. 1.3. Details of the supplier of the safety data sheet Praxair, Inc. 10 Riverview Drive Danbury, CT 06810-6268 - USA T 1-800-772-9247 (1-800-PRAXAIR) - F 1-716-879-2146 www.praxair.com 1.4. Emergency telephone number Emergency number : Onsite Emergency: 1-800-645-4633 CHEMTREC, 24hr/day 7days/week — Within USA: 1-800-424-9300, Outside USA: 001-703-527-3887 (collect calls accepted, Contract 17729) SECTION 2: Hazard identification 2.1. Classification of the substance or mixture GHS US classification Acute Tox. 2 (Oral) H300 Acute Tox. 2 (Inhalation) H330 Skin Corr. 1A H314 Eye Dam. 1 H318 2.2. Label elements GHS US labeling Hazard pictograms (GHS US) : GHS05 GHS06 Signal word (GHS US) : Danger Hazard statements (GHS US) : H300+H330 - FATAL IF SWALLOWED OR IF INHALED H314 - CAUSES SEVERE SKIN BURNS AND EYE DAMAGE EUH-014 - REACTS VIOLENTLY WITH WATER CGA-HG22 - CORROSIVE TO THE RESPIRATORY TRACT Precautionary statements (GHS US) : P202 - Do not handle until all safety precautions have been read and understood. -
Process and Material Challenges in the High Rate Deposition Of
Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma Laurent Kroely To cite this version: Laurent Kroely. Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma. Plasma Physics [physics.plasm-ph]. Ecole Polytechnique X, 2010. English. pastel-00550241 HAL Id: pastel-00550241 https://pastel.archives-ouvertes.fr/pastel-00550241 Submitted on 24 Dec 2010 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Laboratoire de Physique des Interfaces et des Couches Minces Th`ese pr´esent´ee pour obtenir le grade de DOCTEUR DE L’E´COLE POLYTECHNIQUE Sp´ecialit´e : Physique des Plasmas par Laurent Kroely [email protected] Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma Soutenue le 28 septembre 2010 devant le jury compos´e de : Christophe Ballif Examinateur et pr´esidentdu jury Yvonnick Durand Invit´e Jean-Paul Kleider Rapporteur Patrick Leempoel Examinateur Fran¸coise Massines Rapporteur Pere Roca i Cabarrocas Directeur de th`ese Rutger Schlatmann Examinateur Marc Vermeersch Examinateur Table of contents Introduction 7 I Context : High rate deposition of microcrystalline silicon films and solar cells 11 1 Introduction ..................................... -
United States Patent (19) 11) 4,393,230 Crocker Et Al
United States Patent (19) 11) 4,393,230 Crocker et al. 45) Jul. 12, 1983 54 METHOD OF PREPARNG ETHYL 56) References Cited SLCATE U.S. PATENT DOCUMENTS (75) Inventors: William A. Crocker, Corvallis; Duane 3,320,297 5/1967 Pino ..................................... 556/.458 L. Hug, Albany, both of Oreg. FOREIGN PATENT DOCUMENTS (73) Assignee: Teledyne Industries, Inc., Albany, 78532 12/1980 U.S.S.R. .............................. 556/457 Oreg. Primary Examiner-Paul F. Shaver Attorney, Agent, or Firm-Shoemaker and Mattare, Ltd. 21) Appl. No.: 305,554 (57) ABSTRACT A method of continuously producing in high yield ethyl 22) Filed: Sep. 25, 1981 silicate having a predetermined content of silica by adjusting the flowrate of reactants to the reactor in (51) Int, Cl............................. COTF 7/08; C07F 7/18 relation to the temperature of the reaction. (52) U.S. Cl. ..................................... 556/.457; 556/458 58 Field of Search ............................... 556/457, 458 5 Claims, 2 Drawing Figures U.S. Patent Jul. 12, 1983 4,393,230 A/G / GASESABSORBER TO HC - COOLING WATER 7 CONDENSER MIXTURE SiCl4 DRY N SPARGE /11 OVERFLOW CRUDE ETHYL SILICATE 4O 61EA6 Oof E A/G. 2. RELATIONSHIP BETWEEN REACTION TEMPERATURE AND SILCA CONTENT 39 4O 4. 42 43 44 SILICA CONTENT (%) 4,393,230 1. 2 METHOD OF PREPARNG ETHYL SCATE When an excess of silicon tetrachloride is present, it BACKGROUND OF THE INVENTION can react with ethyl orthosilicate to give polymeric products: 1. Field of the Invention This invention relates to a method of continuously producing ethyl silicate. More specifically, it deals with a method of accurately controlling the flowrate of the In order to reduce the extent of the side reactions reactants in relation to the temperature of the reaction.