Crystal Technology 1 202
Company Profi le
Qioptiq designs and manufactures photonic products precision manufacturing and responsive global and solutions, serving a wide range of markets and sourcing. Due to a series of acquisitions, Qioptiq applications in the medical and life sciences, industrial has an impressive history and pedigree, benefi ting manufacturing, defense and aerospace, and research from the knowledge and experience of LINOS, and development sectors. Point Source, Rodenstock Precision Optics, Spindler & Hoyer, Gsänger, Optem, Pilkington, Avimo and The company is known for its high-quality standard others. With a total workforce exceeding 2,300, components, products and instruments, custom Qioptiq has a worldwide presence with locations modules and assemblies, leading-edge innovation, throughout Europe, Asia and the USA.
1877 1898 1966 1969 1984 1991
Pilkington PE Ltd. founded, Rodenstock Spindler & Hoyer which later Gsänger Optem Point Source founded founded becomes Optoelektronik International founded THALES Optics founded founded Medical & Life Sciences
Industrial Manufacturing Index
Company Profi le 02 – 03 Core Competencies 04 – 05 LINOS Faraday Isolators – Introduction 06 – 09
Single Stage Faraday Isolators 10 – 17 03 Defense & Isolators with a Broad Tuning Rage 18 – 20 Aerospace Two Stage Faraday Isolators 21 – 24 Questionnaire Faraday Isolators 25
LINOS Pockels Cells and Laser Modulators – Introduction 26 LINOS Pockels Cells – Technical Information 27 – 31 Research & Development LINOS Pockels Cells 32 – 43 Questionnaire Pockels Cells 44
LINOS Laser Modulators – Technical Information 45 – 46 Amplifi ers 47 – 48 LINOS Laser Modulators 48 – 53 Questionnaire Laser Modulators 54
1996 2000 2001 2005 2006 / 2007 2010
Qioptiq founded as LINOS founded Rodenstock AVIMO Group THALES sells Qioptiq acquires The new Qioptiq through the merger Präzisionsoptik acquired High Tech LINOS and Point Source consolidates all of Spindler & Hoyer, acquired by THALES Optics Group as “members of the group members Steeg & Reuter by LINOS Qioptiq group” under one brand Präzisionsoptik, Franke Optik and Gsänger Optoelektronik 404
Core Competencies
Qioptiq offers the most comprehensive set of technologies and knowledge to fulfi ll the demands of almost any modern application in the fi eld of photonics.
Our decades of interdisciplinary experience in many markets enable us to provide a portfolio of design, technologies and manufacturing capabilities suitable Design and development for your specifi c application. We can supply a • Optical system design including solution that will boost your competitive edge and non-linear optics support your efforts to optimize your products. Our • Mechanical design components, modules and systems have superior • Characterization of crystals specifi cations – such as optimum optical resolution, • FEM-analysis including magnetic highest transmission, superior beam quality and and thermal effects much more. • Standard and Sol-Gel coating technologies • Numerous product patents • Lasers for biotechnology and metrology 055
Materials Assembly technologies • Non-linear crystals: KD*P, BBO, RTP, • Development of in-house processes
ADP, LiNbO3, TGG and others for assembly of electro- and • Various optical materials for UV to IR magneto-optical systems applications • Glueing technologies • Metals, magnets and various polymer • Flow-box assembly materials LINOS Faraday Isolators
The LINOS Faraday Isolators
We have LINOS Faraday isolators for all wavelengths in the range from 390 nm to 1310 nm, as well as ! for 1550 nm. Isolators for other wavelengths can Special features: be implemented upon request. Many isolators can We also have LINOS Microbench-compatible versions be adjusted over a wide spectral range; variable of our isolators for the most commonly used frequency models can even be set for an interval wavelengths. of several hundred nanometers. At the same time, We are always happy to implement custom designs LINOS Faraday isolators are distinguished by high and systems, even for one-time orders. performance combined with the greatest possible transmission. With more than 60 dB, our two-stage Ideal areas of application: 06 isolators offer the best isolation available on the Protecting lasers from damage or instability; market. decoupling oscillators and amplifi cation systems; The consistently high Qioptiq quality is assured by injection locking, panels, and more. a combination of our many years of experience, an intelligent design, modern engineering with computer simulations, sophisticated processing and our ISO 9001 / ISO 13485 certifi ed quality management system. The result is the incomparable value that distinguishes all our products – value you can count on!
Qioptiq quality criteria:
Isolation > 30 dB (one-stage) or > 60 dB (two-stage) More information: Transmission > 90% (one-stage) or > 80% Contact us to receive the complete Qioptiq standard (two-stage) All models can be used in wide offer in our LINOS catalog by mail, or look for it wavelength ranges under: www.qioptiq-shop.com LINOS Faraday Isolators
Overview
Single StageStage Aperture
FI-600/1100-8SI FI-1060-8SI
FI-600/1100-5SI FI-500/820-5SV FI-420/460-5SV FI-390/420-5SV FI-500/780-5SV
FI-x-5SV 5 mm FI-405-5SV FI-488-5SV FI-x-5SI 07 Broadband FI-x-5SV BB
Microbench FI-x-5SV MB
Low Power FI-x-5LP
Compact FI-488-5SC FI-x-5SC
3.5 mm Compact FI-488-3SC FI-x-3SC
2 mm FI-x-2SV FI-x-2SI Wavelength 400 500 600 700 800 900 1000 1100 1200
Aperture Two Stage
5 mm
Wavelength
Aperture LPE-Technology
4 mm Wavelength LINOS Faraday Isolators TGG Crystal
N Maximum Transmission S Characteristics N Polarizer Faraday Rotator
Principle of Operation Maximum Extinction Faraday isolators are optical components which allow light travel in only one direction. Their mode of operation is based on the non-linear Faraday effect direction of the magnetic fi eld (±45°) and the (magneto rotation). In principle, the function of an exit polarizer is also oriented at ±45°, so that the optical isolator is analogue to that of an electrical maximum beam intensity is transmitted. diode. If light of any polarization, but with a reversed direction Faraday isolators are composed of three elements: of propagation, meets the exit polarizer, it leaves • Entrance Polarizer at ±45°, passes through the Faraday rotator and is 08 • Faraday Rotator again rotated by ±45°. The non-reciprocal nature of • Exit Polarizer the Faraday effect results in the direction of rotation once again being counter clockwise as viewed in the Thin fi lm polarizers are commonly used as entrance north/south direction of the magnetic fi eld. Upon and exit polarizers, typically in form of a special leaving the Faraday rotator, the polarization has polarizing beam splitter cube. These polarizers have gone through two ±45° rotations resulting in a total an extremely high extinction ratio and are designed rotation of ±90°. In this polarization direction the for use with high power lasers. The polarizer entrance light is defl ected laterally by the entrance polarizer. and exit surfaces are coated with an antirefl ective coating for the specifi ed wavelength range. The key Increased Isolation element of the Faraday isolator is the Faraday rotator. The maximum isolation of the Faraday isolator is The rotator consists of a strong permanent magnet limited by inhomogenities of the TGG crystal and containing a crystal with a high Verdet constant. the magnetic fi eld. However, it is possible to square the extinction ratio by placing two isolators in series Light of any polarization entering the entrance and by arranging the polarity of the two magnets to polarizer exits as horizontally or vertically linearly be opposite to each other. This way the polarization polarized light. Since laser light is usually linearly direction of the transmitted light remains unchanged polarized, one can match the orientation of the in the transmission direction and the effect of both entrance polarizer and the laser by simply rotating magnetic fi elds is enhanced. This arrangement also the isolator. Light then passes through the Faraday leads to a more compact isolator. The strength of rotator. For most wavelengths the crystal is a Terbium this effect depends on the distance between the Gallium Garnet (TGG) crystal which is placed in a two magnets and can be used to tune the isolator to strong homogeneous magnetic fi eld. Crystal length different wavelengths. The adjustment is necessary and magnetic fi eld strength are adjusted so that because the rotational angle of the TGG crystal is the light polarization is rotated by 45° on exiting wavelength and temperature dependent. Please see the crystal. In the fi gure above the light is rotated chapter “Two stage isolators” (page 21) for more counter clockwise when viewed in the north/south information. LINOS Faraday Isolators
Advantages
High Isolation Three sides of the entrance and exit polarizers are The properties of the LINOS Faraday isolator are usable and readily accessible for easy cleaning. The determined by the quality of the optical elements and degree of isolation can be adjusted in a wide range. the uniformity of the magnetic fi eld. The entrance and exit polarizers exhibit a very high extinction ratio, so Mounting Flexibility that the isolation is mainly limited by inhomogenities The LINOS Faraday isolators can be mounted directly in the crystal material. Specially selected crystal via threaded holes in the housing or via additional materials with a high Verdet constant combined with base plates or angle brackets. permanent magnets with a high remanence enable us to use shorter crystals and obtain an isolation Applications > 30 dB. The ongoing development and refi nement of 09 laser technology have created a need for optical The radiation blocked by the entrance and exit components that shield the laser resonator from polarizers is not absorbed internally, but is defl ected back refl ections. LINOS Faraday isolators provide by 90° with respect to the beam direction. This an effi cient method of suppressing instabilities and ensures a stable thermal operation even at higher intensity fl uctuations in laser devices. laser power levels. The blocked radiation can be used for other applications. All optical surfaces are slightly Typical applications are: tilted relative to the beam axis. • Protection of the resonator in solid state and gas lasers from back refl ections Low Insertion Loss • Prevention of parasitic oscillation in multistage solid The high transmission, typically > 90%, is achieved state amplifi ers by using absorption free materials and antirefl ective • Protection of diode lasers against back scatter and coatings with low residual refl ectivity on all entrance extraneous light and exit surfaces.
Large Aperture, Compact Design compact design low insertion loss All optical elements have been aligned to eliminate beam shading and allow for easy adjustment. Focusing is not necessary. The compact design is achieved by using rare earth magnets with the highest remanent magnetism and large aperture TGG crystal material with a high Verdet constant. The isolator is suitable for divergent beams or in setups with limited space. A minimal optical path length in the isolator results in the lowest possible infl uence high isolation on the image. LINOS Faraday Isolators
Single Stage Faraday Isolators
Technical Overview Broadband option The compact LINOS Faraday isolators in this chapter On Broadband (BB) models the isolation is improved use a single stage rotator. The length is kept to a over a broadband spectrum by compensating minimum with the use of powerful permanent rotational dispersion of the TGG. This renders the magnets in an optimized geometry. A 360° rotation device usable over a wavelength range of ±50 nm of the exit polarizer provides a maximum extinction without additional adjustment. The isolators can be over a certain range around the central wavelength. mounted on rods, cylindrical mounts or by using the The entrance and exit polarizers are polarizing beam assembly surfaces so that the laser polarization can splitter cubes. The blocked radiation is diverted by be oriented horizontally or vertically. 90° and is readily available for other applications. At 10 30 dB, the specifi cation of the isolator is suffi cient Applications for most standard applications. For specialized The following single stage LINOS Faraday isolators applications, selected isolators with an extinction up are suitable for all lasers operating in the range to 45 dB are available. especially: An even higher extinction is provided by the two stage isolator series. • Ar+ and Kr+ lasers • other Ion lasers Wavelength tuning • HeNe lasers The Verdet constant of the TGG crystal is dependent • other gas lasers upon wavelength and temperature. In order to • Dye lasers compensate for different temperatures or different • Diode lasers wavelengths, it is possible to tune the isolator in • Ti:Sapphire lasers order to achieve maximum extinction. Tuning the • Cr:LiCAF lasers isolator is accomplished by rotating the holder of the • Short pulse lasers exit polarizer with respect to an engraved angular • Mode-synchronized lasers scale. • Alexandrite lasers
The graph shows the typical reduction factor of the transmission (Δλ) that is due to the tuning of the
isolator to a wavelength λ that is different from the ) [%] Δλ
design wavelength λ0. The bar has a length that covers the wavelength range for which 0.95 < T(Δλ) < 1.
The bullet indicates the design wavelength λ0. The overall transmission of a Faraday isolator is equal to
Tt = T0 x T(Δλ), where T0 is a factor that represents the transmission of the polarizers. At the design
wavelength the overall transmission of the Faraday Reduction of transmission T(
isolator is T0 > 90% Tuning of design wavelength Δλ LINOS Faraday Isolators
Isolators with 2mm Aperture, SV / SI-Series FI-x-2SV / FI-x-2SI
• Isolation better than 30 dB / typically 38 - 42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam FI-x-2SV (x = 530, 630, 680 nm) • Mounting 2SV-version: via two M3 threaded holes at the bottom side, 11 20 mm separation
• Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-x-2SI (x = 760, 820, 990, 1060 nm)
FI-x-2SV / FI-x-2SI
Product Isolation, Transmission Transmission Tuning Aperture Dimen sions Order-No guaranteed / at design at boundry range Isolator typical wavelength wavelength typical (dB) (%) (%) (nm) (mm) (mm)
FI-530-2SV > 30/38-42 > 90 > 85 505 - 565 Ø 2 25x25x37 84 50 1010 007 FI-630-2SV > 30/38-42 > 90 > 85 595 - 670 Ø 2 25x25x37 84 50 1011 000 FI-680-2SV > 30/38-42 > 90 > 85 645 - 725 Ø 2 25x25x37 84 50 1010 009 FI-760-2SI > 30/38-42 > 90 > 85 720 - 810 Ø 2 Ø 40x91 84 50 1034 007 FI-820-2SI > 30/38-42 > 90 > 85 775 - 875 Ø 2 Ø 40x91 84 50 1034 008 FI-990-2SI > 30/38-42 > 90 > 85 940 - 1050 Ø 2 Ø 40x91 84 50 1034 009 FI-1060-2SI > 30/38-42 > 90 > 85 1010 - 1120 Ø 2 Ø 40x91 84 50 1034 010 Subject to technical changes LINOS Faraday Isolators
Isolators with 3.5 and 5mm Aperture, SC-Series FI-x-3SC / FI-x-5SC
• Extreme compact design • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved FI-x-3SC (x = 488, 980, 1064, 1120 nm) tuning scale • Access to blocked beam
12 • Optional version with Brewster plate polarizers (BP) on request for FI-1060-xSC, isolation better than 30 dB • Mounting: via four M2 threaded holes at the bottom side and at backside; 15 x 22.5 mm separation (3SC-version, except FI-1210-3SC); FI-x-5SC (x = 488, 930, 1064, 1120 nm) 49.5 x 22.5 mm separation (FI-1210-3SC); 13 x 22.5 mm separation (5SC-version)
• Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-1210-3SC, -5SC
FI-x-3SC / FI-x-5SC
Product Isolation, Transmission Transmission Tuning A p er tu re Dim ensions Order-No guaranteed/ at design at boundry range typical wavelength wavelength typical (dB) (%) (%) (nm) ( m m ) (mm )
FI-488-3SC* > 35/38-42 > 90 - 478 - 498 Ø 3.5 40x40x60 84 51 1090 0016 FI-488-5SC* > 35/38-42 > 90 - 478 - 498 Ø 5 45x45x58 84 51 1090 0013 FI-980-3SC > 30/38-42 > 90 > 85 925 - 1040 Ø 3.5 40x40 x60 84 50 1036 004 FI-930-5SC > 30/38-42 > 90 > 85 880 - 990 Ø 5 45x45 x58 84 50 1037 007 FI-1060-3SC > 30/38-42 > 90 > 85 1010 - 1120 Ø 3.5 40x40 x60 84 50 1036 001 FI-1060-5SC > 30/38-42 > 90 > 85 1010 - 1120 Ø 5 45x45 x58 84 50 1037 001 FI-1120-3SC > 30/38-42 > 90 > 85 1080 - 1170 Ø 3.5 40x40x60 84 51 1010 0057 FI-1120-5SC > 30/38-42 > 90 > 85 1080 - 1170 Ø 5 45x45x58 84 51 1010 0009 FI-1210-3SC > 30/38-42 > 90 > 85 1160 - 1260 Ø 3.5 45x45 x96 84 51 1010 0043 FI-1210-5SC > 30/38-42 > 90 > 85 1160 - 1260 Ø 5 45x45 x96 84 51 1010 0053
* optical contacted polarizers Subject to technical changes LINOS Faraday Isolators
Isolators with 5mm Aperture, LP-Series FI-x-5LP
• Faraday Isolator, low power • Isolation better than 38 dB • TGG crystal • Rare earth magnet • In- and output polarizer rotatable
• Mounting: via two M4 threaded holes at the bottom side, 30 mm separation FI-x-5LP (x = 630, 680, 780, 850 nm) • Damage threshold > 25 W / cm2 13
FI-x-5LP
Product Isolation, Transmission at Tuning range Aper ture Dimension Order-No guaranteed design wavelength typical Isolator (dB) (%) (nm) (mm) (mm)
FI-630-5LP > 38 > 70 595 - 670 Ø 5 41x40x40 84 51 1010 0098 FI-680-5LP > 35 > 75 645 - 725 Ø 5 41x40x40 84 51 1010 0100 FI-780-5LP > 38 > 85 750 - 810 Ø 5 41x40x40 84 51 1010 0091 FI-850-5LP > 38 > 85 810 - 905 Ø 5 41x40x40 84 51 1010 0099
Subject to technical changes LINOS Faraday Isolators
Isolators with 5mm Aperture, SV / SI-Series FI-x-5SV / FI-x-5SI
• Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam
FI-x-5SV (x = 530, 630, 730, 780, 810, 850 nm) • Optional version with Brewster plate 14 polarizers (BP) on request for FI-1060-5SI, isolation better than 30 dB • For upgrading to broadband-version refer to chapter Special Isolators • Mounting: via two M4 threaded holes at the bottom side and at the back side; 30 mm separation (5SV-version); 40 mm separation (5SI-version); or via base plate • Base plate included FI-x-5SI (x = 488, 910, 960, 1000, 1060 nm) • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-x-5SV / FI-x-5SI
Item Title Isolation Transmission Transmission Tuning Aperture Dimens ions Dimensions Order-No guaranteed / at design at boundry range Isolator base plate typical wavelength wavelength typical (LxWxH) (dB) (%) (%) (nm) (mm) (mm) (mm)
FI-405-5SV* > 35 > 88 - 400 - 420 Ø5 40x56x90 - 84 51 1010 0131 FI-488-5SI* > 30/38-42 > 90 > 85 478 - 498 Ø5 58x58x95 70x58x8 84 50 1030 000 FI-530-5SV > 30/38-42 > 90 > 85 505 - 565 Ø5 40x40x55 50x30x9.5 84 50 1013 002 FI-630-5SV > 30/38-42 > 90 > 85 595 - 670 Ø5 40x40x55 50x30x9.5 84 50 1013 004 FI-730-5SV > 30/38-42 > 90 > 85 690 - 780 Ø5 40x40x55 50x30x9.5 84 50 1013 034 FI-780-5SV > 30/38-42 > 90 > 85 740 - 830 Ø5 40x40x55 50x30x9.5 84 50 1013 008 FI-810-5SV > 30/38-42 > 90 > 85 765 - 865 Ø5 40x40x55 50x30x9.5 84 50 1013 033 FI-850-5SV > 30/38-42 > 90 > 85 805 - 905 Ø5 40x40x55 50x30x9.5 84 50 1013 027 FI-910-5SI > 30/38-42 > 90 > 85 860 - 970 Ø5 58x58x95 70x58x8 84 50 1031 002 FI-960-5SI > 30/38-42 > 90 > 85 910 - 1020 Ø5 58x58x95 70x58x8 84 50 1031 006 FI-1000-5SI > 30/38-42 > 90 > 85 950 - 1060 Ø5 58x58x95 70x58x8 84 50 1031 014 FI-1060-5SI > 30/38-42 > 90 > 85 1010 - 1120 Ø5 58x58x95 70x58x8 84 50 1031 000 * optical contacted polarizers Subject to technical changes LINOS Faraday Isolators
Isolators with 8mm Aperture, SI-Series FI-1060-8SI
• Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam FI-1060-8SI • Optional version with Brewster plate polarizers (BP) on request, isolation better 15 than 30 dB • Mounting: via two M4 threaded holes at the bottom side and at the back side; 55 mm separation, or via base plate • Base plate included
• Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-1060-8SI
Item Isolation, Transmission Transmission Tuning Aperture Dimen sions Dimensions Order-No Title guaranteed / at design at boundary range Isolato r base plate typical wavelength wavelength typical (LxWxH) (dB) (%) (%) (nm) (mm) (mm) (mm)
FI-1060-8SI > 30/38-42 > 90 > 80 1010-1120 Ø 8 76x76x95 85x76x8 84 50 1032 000 Subject to technical changes LINOS Faraday Isolators
Special Isolators with 5mm Aperture, SV-Series FI-x-5SV-MB / FI-x-5SV-BB
• Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale FI-x-5SV-MB (x = 530, 630, 730, 780, 810, 850 nm) • Access to blocked beam
• MB-version: compatible to the 16 Microbench system • BB-version: for multiline lasers or spectrally broadband lasers such as fs-laser systems • Mounting BB-version: via two M4 threaded holes at the bottom side and at the back side; 30 mm separation, or via base plate • Base plate included FI-x-5SV-BB (x = 780, 820 nm) • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-x-5SV-MB / FI-x-5SV-BB
Product Isolation Transmission Transmission Tuning Aperture Dimensions Dimensions Order-No guaranteed/ at design at boundary range Isolator base plate t ypical wavelength wavelength typical (LxWxH) (dB) (%) (%) (nm) (mm) (mm) (mm)
FI-530-5SV-MB > 30/38-42 > 90 > 85 505 - 565 Ø 5 42x36x65 - 84 50 1014 002 FI-630-5SV-MB > 30/38-42 > 90 > 85 595 - 670 Ø 5 42x36x65 - 84 50 1014 004 FI-730-5SV-MB > 30/38-42 > 90 > 85 690 - 780 Ø 5 42x36x65 - 84 50 1014 034 FI-780-5SV-MB > 30/38-42 > 90 > 85 740 - 830 Ø 5 42x36x65 - 84 50 1014 008 FI-810-5SV-MB > 30/38-42 > 90 > 85 765 - 865 Ø 5 42x36x65 - 84 50 1014 033 FI-850-5SV-MB > 30/38-42 > 90 > 85 805 - 905 Ø 5 42x36x65 - 84 50 1014 001 FI-780-5SV-BB > 30/38-42 > 90 > 85 725 - 825 Ø 5 40x40x61 50x30x9.5 84 50 1024 008 FI-820-5SV-BB > 30/38-42 > 90 > 85 760 - 860 Ø 5 40x40x61 50x30x9.5 84 50 1024 009 Subject to technical changes LINOS Faraday Isolators
4mm Aperture Isolators with Magnetooptical Crystal Film FI-x-4SL
• Extremely small size • Isolation better than 35 dB • Faraday material: magneto-optical crystal fi lm in saturation • Rare earth magnet • Output polarizer, 360° rotation • Access to blocked beam FI-x-4SL (x = 1310, 1550 nm) • Max. cw power: 2 W • Damage threshold > 100 MW / cm2 for pulses of 20 ns (1550 nm) 17
FI-x-4SL
Item Title Isolation, Transmission Transmision Tuning range Aperture Dimensions Order-No guaranteed/ at design at boundary typical Isolator typical wavelength wavelength (dB) (%) (%) (nm) (mm) (mm) FI-1250-4SL > 35 > 85 > 80 1200 - 1300 Ø 4 14x23.5 84 51 102 000 04 FI-1310-4SL > 35 > 90 > 85 1260 - 1360 Ø 4 14x23.5 84 50 1071 000 FI-1550-4SL > 35 > 90 > 85 1485 - 1615 Ø 4 14x23.5 84 50 1072 000 Subject to technical changes LINOS Faraday Isolators
Isolators with a Broad Tuning Range
Technical Overview Introduction The function of the tunable LINOS Faraday isolators in the following chapter is based on a single stage isolator. Precision mechanics allow a continuous adjustment of the interaction between the magnetic fi eld and the TGG crystal without moving any optical components. 18 It is possible to set the rotation angle to any value between 0° to 45° within the wavelength range in order to study the effects of varying degrees of feedback. Easy access to the blocked beam is provided by polarizing beam splitter cubes, which divert the blocked beam by 90°.
Precision mechanics allow the exact reproduction of adjustments previously established. And with the • Ar+ and Kr+ lasers addition of an optional micrometer display, an angular • other Ion lasers resolution in the arc minute range is achievable. The • HeNe lasers incorporation of very powerful magnets ensures a • Other gas lasers compact and effi cient design. • Diode lasers • Nd:YAG lasers Operation • Ti: Sapphire lasers The isolator can be mounted on rods, cylindrical • Cr:LiCAF lasers mounts or by using the assembly surfaces so that • Dye lasers the laser polarization can be oriented horizontally or • Alexandrite lasers vertically. The entry and exit polarizers can be easily • Mode-locked lasers cleaned by removing the security rings. • Short Pulse lasers
Applications Faraday Rotator These isolators are suitable for all lasers operating For every laser line selected from 390 nm to a in the 390-420 nm respectively in the 500-1100 nm maximum of 1100 nm, every polarization direction wavelength range especially for: from 0° to 90° is precise and reproducible. LINOS Faraday Isolators
5mm Aperture Tunable Isolators, SV / SI-Series FI-x/y-5SV / FI-600/1100-5SI
• Continuous adjustment for wavelength without movement of optical parts
• Tunable with maximum transmission and isolation over the complete wavelength range • Isolation better than 30 dB, typically 38 - 42 dB over the entire wavelength range, custom isolation values on request FI-x/y-5SV • TGG crystal • Rare earth magnet 19 • Access to blocked beam
• Mounting: via two M4 threaded holes at the bottom side and at the back side; 20 mm separation (5SV-version); 55 mm separation (5SI-version); or via base plate, or via angle bracket (5SV-version only) • Base plate included • Angle bracket included (5SV-version only) FI-600/1100-5SI • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-x/y-5SV, FI-x/y-5SI
Product Isolation, Transmission Tuning range Aperture Dimen sions Dimensions Order-No guaranteed / at design typical Isolator base plate typical wavelength (LxWxH) (dB) (%) (nm) (mm) (mm) (mm)
FI-390/420-5SV > 30/38-42 > 90 390-420 Ø 5 60x60x77 54x60x8 84 50 1046 000 FI-420/460-5SV > 30/38-42 > 90 420-460 Ø 5 60x60x77 54x60x8 84 50 1046 001 FI-500/820-5SV > 30/38-42 > 90 500-820 Ø 5 60x60x77 54x60x8 84 50 1041 000 FI-600/1100-5SI > 30/38-42 > 90 600-1100 Ø 5 80x80x125 88x90x8 84 50 1044 000 Subject to technical changes
High quality
A precise mechanics enables a continuous wavelength adjustment. Without movement of the optics a broad wavelength range is realized. LINOS Faraday Isolators
8mm Aperture Tunable Isolator, SI-Series FI-600/1100-8SI
• Continuous adjustment for wavelength • Damage threshold > 200 mJ / cm2 for without movement of optical parts pulses of 10 ns (1064 nm) • Tunable with maximum transmission and • Damage threshold > 28 mJ / cm2 for isolation over the complete wavelength pulses of 280 fs (850 nm, 20 Hz) • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet FI-600/1100-8SI • Access to blocked beam 20 • Mounting: via two M4 threaded holes at the bottom side and at the back side; 55 mm separation, or via base plate • Base plate included
FI-600/1100-8SI
Item Title Isolation, Trans mission Tuning range Ape rtur e Dimensions Dimensions Order-No guaranteed/ typical Isolator base plate typical (LxWxH) (dB) (%) (nm) (mm ) (mm) (mm)
F I- 6 0 0 / 1 1 0 0 -8 S I > 30/38-42 > 90 600 - 1100 Ø 8 80x80x125 88x90x8 84 50 1045 000 Subject to technical changes
A closer look
The excellent quality of the high-precision LINOS electro-optics from Qioptiq is a testament to decades of experience at both Gsänger and Qioptiq. The 40-year history of these products is marked by immense customer satisfaction, and has established Qioptiq as a leader in laser technology.
Dr. Gsänger, founder of Gsänger Optics in Munich, was instrumental in the success of the electro-optics. Two Stage Faraday Isolators
Technical Overview Based on this special FI-x-5TI and FI-x-5TV design a guaranteed Diode lasers are extremely sensitive to refl ected 60 dB isolation at the radiation. Standard Faraday isolators typically achieve design wavelength, respectivelyctively within tthehe between 30 dB and 40 dB isolation, which in some adjustment range of ±10 nm, makes Linos two stage cases is not suffi cient to suppress undesirable Faraday isolators the best on the market. feedback. DLI, Overview Our two stage LINOS Faraday isolators were The isolators of the DLI-series were developed for 21 developed for the special requirements of diode the special requirements of diode lasers in the visible lasers and square the standard isolation of single stage spectrum and combine the outstanding isolation of Faraday isolators. At the heart of this development a two stage isolator with the fl exibility of a tunable is the use of two coupled isolator stages together isolator. with the best polarizers available on the market. The DLI isolators are easily integrated into an existing This confi guration combines the exit polarizer of setup and can be adjusted to match any wavelength the fi rst stage with the entry polarizer of the second without changing the laser polarization or displacing stage to form one central polarizer. the laser beam. The isolators can be coarsely tuned by altering the effective magnetic fi eld in the two Arranging the polarity of the two magnets to be isolator stages. A precise wavelength adjustment opposite to each other results in two benefi ts: is possible by rotating the central polarizer with The polarization direction of the transmitted light a micrometer set screw. The blocked radiation is remains unchanged in the transmission direction defl ected out of the isolator at 90° with respect to and the effect of both magnetic fi elds is enhanced. the beam axis. It is not absorbed by the interior of Therefore this confi guration also leads to a more the isolator, but is available at the side surfaces of the compact isolator and a reduction of the optical path polarizer and the exit window. length which in turn enhances the optical quality of the LINOS Faraday isolator. DLI Injection Locking The DLI injection version revolves this operating mode All optical surfaces are antirefl ection coated and and uses the exit window for in-coupling of the seed the surfaces normal to the beam axis are tilted. laser for injection locking while decoupling effi ciently The polarizers are mounted in a way that allows the master and the slave laser from each other at easy cleaning of the external optical surfaces. This the same time. Like this stable mode locking (e.g. of guarantees that the isolation is not reduced by Ti:Sapphire lasers) is simplifi ed. residual refl ections and scattering from the isolator. LINOS Faraday Isolators
Applications All two stage LINOS Faraday isolators are typically used to improve the power and frequency stability of diode lasers used in spectroscopy, interferometry and precision control as well as in alignment applications. Since the output polarization and the beam position are conserved for all two stage LINOS Faraday isolators, the infl uence of the smallest feedback effects on the laser can be quantitatively examined.
22 LINOS Faraday Isolators
5mm Aperture Two Stage Faraday Isolators (non-tunable), TV / TI-Serie FI-x-TV / FI-x-TI
• Two coupled isolator stages in series • Especially high isolation > 60 dB High quality • TGG crystal • Rare earth magnet High isolation (60 dB) and high • TV-version: wavelength range ±10 nm transmission for wavelengths FI-x-TV depending on the central wavelength from 650 nm to 1060 nm is • TI-version: wavelength adjustable guaranteed. • Customized central wavelength on request • Mounting TV-version: 23 via two M4 threaded holes at the bottom side, 30 mm separation • Mounting TI-version: via two M4 threaded holes at the bottom side or at the back side, 40 mm separation, or via base plate FI-x-TI • Base plate included
• Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
FI-x-TV / FI-x-TI
Product Isolation, Transmission Tuning range A p er tu re Dimensions Dimensions Order-No guaranteed at design typical Isolator base plate wavelength (%) (LxWxH) (dB) (nm) ( m m ) (mm) (mm) FI-650-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 51 1010 0044 FI-670-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 50 1060 020 FI-710-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 50 1060 019 FI-760-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 50 1060 017 FI-780-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 50 1060 002 FI-810-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 50 1060 003 FI-850-TV ≥ 60 ≥ 80 - Ø 5 40x40x106 - 84 50 1060 009 FI-920-TI ≥ 60 ≥ 80 885-960 Ø 5 58x58x131 70x58x8 84 50 1061 001 FI-950-TI ≥ 60 ≥ 80 915-990 Ø 5 58x58x131 70x58x8 84 50 1061 002 FI-980-TI ≥ 60 ≥ 80 940-1020 Ø 5 58x58x131 70x58x8 84 50 1061 003 FI-1060-TI ≥ 60 ≥ 80 1000-1080 Ø 5 58x58x131 70x58x8 84 50 1061 004 Other wavelengths available upon request Subject to technical changes LINOS Faraday Isolators
5mm Aperture Two Stage Faraday Isolators (tunable), DLI-Series Tunable Diode Laser Isolators DLI
• Tunable with maximum isolation over the complete wavelength range • Two coupled isolator stages in series • Especially high Isolation > 60 dB • TGG crystal • Rare earth magnet • Input polarization = output polarization • Individually calibrated adjustment curve supplied with each isolator 24 • Mounting: via four M4 threaded holes at the bottom side and at the back side; 40 x 40 mm separation, or via base plate • Base plate included • Special version for injection locking on request
• Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz)
DLI-x
Product Isolation, Transmission at design Tuning range A pe rt ur e Dimensions Dimensions base Order-No guaranteed wavelength typical Isolator plate (LxWxH) (dB) (%) (nm) (m m) (mm) (mm)
DLI 1 ≥ 60 ≥ 80 754-890 Ø5 50x50x97 50x60x10 84 50 1003 000 DLI 2 ≥ 60 ≥ 80 610-700 Ø5 50x50x97 50x60x10 84 50 1002 000 DLI 3 ≥ 60 ≥ 80 650-760 Ø5 50x50x97 50x60x10 84 50 1001 000 Subject to technical changes
A closer look
An easy integration of DLI isolators is possible. They can be adjusted easily without changing laser polarization or beam position. Special versions for injection locking on request. LINOS Faraday Isolators
Faraday Isolators - Questionnaire
QIOPTIQ Photonics GmbH & Co. KG Crystal Technology Hans-Riedl-Straße 9 85622 Feldkirchen Germany
Phone +49(0)89 255 458-100 Fax +49(0)89 255 458-895 E-mail [email protected] Internet www.qioptiq.com
• Full Name: ______• Phone: ______• Company Name: ______• Fax: ______• Address: ______• Zip Code: ______• City: ______25 • Country: ______
1. Laser Parameters at Location of Faraday Isolator 1.1 Wavelength [nm] ______1.2 Type of Laser ______1.3 Beam Diameter, 1/e2 [mm] ______1.4 CW / Pulsed ______1.5 Laser Pulse Energy [mJ] ______1.6 Laser Pulse Duration [ps] ______1.7 Repetition Rate [Hz] ______
2. Type of Faraday Isolator 2.1 Hard Aperture [mm] ______2.2 Transmission [%] ______2.3 Extinction1) [dB] ______1) Single stage: > 30dB, typically 38 - 42dB. Two stage: > 60dB, custom isolation values on request
3. Miscellaneous 3.1 Temperature @ operation ______3 3.2 Year [No. of Units] Target Price / Unit ______
4. Comments / Remarks: ______LINOS Pockels Cells & Laser Modulators
The LINOS Pockels Cells and Laser Modulators
Electro-optical modulators are divided into modulators (for applications outside of laser cavity) ! and Pockels cells (for applications within laser cavity) Special features: on the following pages. On request we can customize products for You can choose from a large selection of crystals for wavelengths in the 250 nm to 3 μm range. a variety of applications, apertures and laser outputs, covering the entire wavelength range from 250 nm Ideal areas of application: to 3 μm. The consistently high Qioptiq quality and Phase and intensity modulation; Q-switching; pulse 26 incomparable value of our products is assured by picking. a combination of our many years of experience, an intelligent design, modern engineering with computer simulations and sophisticated processing. In addition we offer a broad range of fast and high- performance high-voltage drivers. For details, please contact our staff from the customer service.
More information: Contact us to receive the complete Qioptiq offer in Qioptiq quality criteria: our LINOS catalog by mail, or look for it under: Best possible extinction ratio for each crystal www.qioptiq-shop.com High transmission Patented isolation system minimizes piezoelectric oscillation for exceptionally precise switching operations (optional) LINOS Pockels Cells & Laser Modulatorslators
Pockels Cells, Technical Information
The Electro-Optic Effect Q-Switching The linear electro-optic effect, also known as the Laser activity begins when the threshold condition Pockels effect, describes the variation of the refractive is met: the optical amplifi cation for one round trip index of an optical medium under the infl uence of an in the laser resonator is greater than the losses external electrical fi eld. In this case certain crystals (output coupling, diffraction, absorption, scattering). become birefringent in the direction of the optical The laser continues emitting until either the stored axis which is isotropic without an applied voltage. energy is exhausted, or the input from the pump source stops. Only a fraction of the storage capacity 27 When linearly polarized light propagates along the is effectively used in the operating mode. If it were direction of the optical axis of the crystal, its state possible to block the laser action long enough to of polarization remains unchanged as long as no store a maximum energy, then this energy could be voltage is applied. When a voltage is applied, the released in a very short time period. light exits the crystal in a state of polarization which is in general elliptical. A method to accomplish this is called Q-switching. The resonator quality, which represents a measure This way phase plates can be realized in analogy of the losses in the resonator, is kept low until the to conventional polarization optics. Phase plates maximum energy is stored. A rapid increase of the introduce a phase shift between the ordinary and resonator quality then takes the laser high above the extraordinary beam. Unlike conventional optics, threshold, and the stored energy can be released the magnitude of the phase shift can be adjusted in a very short time. The resonator quality can be with an externally applied voltage and a λ/4 or λ/2 controlled as a function of time in a number of retardation can be achieved at a given wavelength. ways. In particular, deep modulation of the resonator This presupposes that the plane of polarization of quality is possible with components that infl uence the incident light bisects the right angle between the state of polarization of the light. Rotating the the axes which have been electrically induced. In the polarization plane of linearly polarized light by 90°, longitudinal Pockels effect the direction of the light the light can be guided out of the laser by a polarizer. beam is parallel to the direction of the electric fi eld. In the transverse Pockels cell they are perpendicular The modulation depth, apart from the homogeneity to each other. The most common application of the of the 90° rotation, is only determined by the degree Pockels cell is the switching of the quality factor of a of extinction of the polarizer. The linear electro- laser cavity. optical (Pockels) effect plays a predominant role besides the linear magneto-optical (Faraday) and the quadratic electro-optical (Kerr) effect. Typical electro- optic Q-switches operate in a so called λ/4 mode. LINOS Pockels Cells
a) Off Q-Switching 5 Light emitted by the laser rod (1) is linearly polarized 1 by the polarizer (2). If a λ/4 voltage is applied to the Pockels cell (3), then on exit, the light is circularly 2
polarized. After refl ection from the resonator mirror 3
(4) and a further passage through the Pockels cell, 6 the light is once again polarized, but the plane of 4 polarization has been rotated by 90°. The light is defl ected out of the resonator at the polarizer, but the resonator quality is low and the laser does not start On Q-Switching 28 to oscillate. At the moment the maximum storage capacity of the active medium has been reached, Pulse Picking the voltage of the Pockels cell is turned off very Typically femto second lasers emit pulses with a rapidly; the resonator quality increases immediately repetition rate of several 10 MHz. However, many and a very short laser pulse is emitted. The use of a applications like regenerative amplifying require polarizer can be omitted for active materials which slower repetition rates. Here a Pockels cell can be show polarization dependent amplifi cation (e.g. used as an optical switch: by applying ultra fast and
Nd:YAlO3, Alexandrite, Ruby, etc.). precisely timed λ/2-voltage pulses on the Pockels cell, the polarization of the laser light can be controlled 5 pulse wise. Thus, combined with a polarizer the
1 Pockels cell works as an optical gate.
2 Selection Criteria The selection of the correct Q-switch for a given 3 application is determined by the excitation of the 4 laser, the required pulse parameters, the switching voltage, the switching speed of the Pockels cell, Off Q-Switching the wavelength, polarization state and degree of coherence of the light. b) On Q-Switching Unlike off Q-switching, a λ/4 plate (6) is used Type of Excitation between the Pockels cell (3) and the resonator mirror Basically, both off and on Q-switching are equivalent (4). If no voltage is applied to the Pockels cell the in physical terms for both cw and for pulse pumped laser resonator is blocked: no laser action takes place. lasers. On Q-switching is, however, recommended A voltage pulse opens the resonator and permits the in cw operation because a high voltage pulse and emission of laser light. not a rapid high voltage switch-off is necessary to generate a laser pulse. This method also extends the LINOS Pockels Cells
life time of the cell. Over a long period of time, the The CPC and SPC series cells are suitable for small, continuous application of a high voltage would lead compact lasers and especially for OEM applications. to electrochemical degradation effects in the KD*P They are available as dry cells and immersion cells. crystal. We advice the use of an on Q-switching driver. The level of deuterium content in an electro-optic crystal infl uences the spectral position of the infrared Off Q-switching is more advantageous for lasers edge. The higher the deuterium level the further the stimulated with fl ash lamps because the λ/4 plate is absorption edge is shifted into the infrared spectral not required. In order to prevent the electrochemical region: for Nd:YAG at 1064 nm, the laser absorption degradation of the KD*P crystal in the off Q-switching decreases. Crystals, which are deuterated to > 98%, mode we recommend a trigger scheme in which the are available for lasers with a high repetition rate or a 29 high voltage is turned off between the fl ashlamp high average output power. pulses and turned on to close the laser cavity before the onset of the pump pulse. Pockels Cell Switching Voltage Using double Pockels cells can half the switching The CPC- and SPC-series cells are recommended for voltage. This is achieved by switching two crystals diode pumped solid state lasers. These cells are ultra electrically in parallel and optically in series. The compact and will operate in a short length resonator: damage threshold is very high and the cells are this is necessary to achieve very short laser pulses. mainly used outside the resonator.
Pulse Parameters Electro-optic material The LM n, LM n IM, and LM n SG series cells are The selection of the electro-optic material depends recommended for lasers with a power density of on its transmission range. Further on, the laser up to 500 MW / cm². The LM n and LM n SG cells parameters as well as the application have to be are used for lasers with very high amplifi cation. The taken into account. SG cells with Sol-Gel technology have the same transmission as the immersion cells and both are For wavelengths from 0.25 μm to 1.1 μm, longitudinal typically used when a higher transmission is required. Pockels cells made of KD*P and a deuterium content At high pulse energies LMx cells are preferred. of 95% should be considered. If the deuterium content is higher the absorption edge of the material Brewster Pockels cells are recommended for lasers is shifted further into the infrared. KD*P crystal cells with low amplifi cation, such as Alexandrite lasers. with a deuterium content > 98% can be used up to The passive resonator losses are minimal due to a 1.3 μm. high transmission of 99%. KD*P can be grown with high optical uniformity and is therefore recommended for large apertures. LINOS Pockels Cells
The spectral window of BBO also ranges from cell will be determined by these factors. Thin fi lm 0.25 μm to 1.3 μm. In addition, BBO crystals provide a polarizers are used and the substrate is mounted at low dielectric constant and a high damage threshold. the Brewster angle. A parallel beam displacement Therefore, BBO is recommended for lasers with high of 1 mm results from this confi guration and can be repetition rate and high average powers. compensated by adjusting the resonator.
RTP, with an optical bandwidth from 0.5 μm up to 1.5 μm, combines low switching voltage and high laser induced damage threshold. Together with its relative insensitivity for Piezo effects RTP is best 30 suited for precise switching in high repetition rate lasers with super fast voltage drivers.
For wavelengths from 1.5 μm up to 3 μm we
recommend LiNbO3.
Suppression of Piezo effects Like any other insulating material electro optical crystals show Piezo effects when high voltage is applied. The extent of the Piezo ringing depends on the electro optic material and usually its effect on the extinction ratio is negligible when used for Q-switching. However, for pulse picking applications, which require highly precise switching behaviour, Qioptiq offers specially Piezo damped Pockels cells which suppress these ringing effects effi ciently.
State of Polarization The MIQS- and CIQS-series cells are supplied with an integrated polarizer: the alignment of the Pockels cell relative to the polarizer thus becomes unnecessary. The rotational position of the cell relative to the resonator axis can be chosen at will. However, should the polarization state of the light in the resonator be determined by other components, such as anisotropic amplifi cation of the laser crystal or Brewster surfaces of the laser rod, then the rotational position of the LINOS Pockels Cells
Product Overview
31 LINOS Pockels Cells
KD*P Pockels Cells LM Series
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
• Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: LM 8 (IM) (SG) LM n (IM) (SG) WP • Optionally available with dust protection caps for hermetically sealed installation: LM n (IM) (SG) DT
32 • Other specifi cations upon request • Please state the applied wavelength when ordering
LM 10 (IM) (SG)
LM 12 (IM) (SG) LM 16 (IM) (SG)
KD*P Pockels Cells LM Series
Pro duct Clear Aperture Transmission typical Extinction ratio λ/4 voltage Capacity Order-No (mm) (%) (voltage-free) (pF)
LM 8 Ø 8 91 > 1000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3001 005 LM 8 IM Ø 8 98 > 1000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3011 002 LM 8 SG Ø 7.5 98 > 1000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3006 001 LM 10 Ø 10 91 > 1000:1 3.2 kV at 1064 nm, 20°C 5 84 50 3002 001 LM 10 IM Ø 10 98 > 1000:1 3.2 kV at 1064 nm, 20°C 5 84 50 3012 001 LM 10 SG Ø 9.5 98 > 1000:1 3.2 kV at 1064 nm, 20°C 5 84 50 3007 005 LM 12 Ø 12 91 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3003 001 LM 12 IM Ø 12 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3013 003 LM 12 SG Ø 11 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3008 001 LM 16 Ø 16 91 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3004 000 LM 16 IM Ø 16 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3014 000 LM 16 SG Ø 15 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3009 000 All order numbers valid for 1064 nm. Subject to technical changes LINOS Pockels Cells
KD*P Pockels Cells MIQS 8 Series
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • With integrated, pre-adjusted Brewster polarizer • Compact design for OEM applications • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 MIQS 8 (IM) (SG) at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
• Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: MIQS 8 (IM) (SG) WP
• Other specifi cations upon request 33 • Please state the applied wavelength when ordering
KD*P Pockels Cells MIQS 8 Series
Prod uct Clear aperture Transmission Extinction ratio λ/4 voltage Capacity Order-No (mm) typical (%) (voltage-free) (pF)
MIQS 8 Ø 8 88 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3070 001 MIQS 8 IM Ø 8 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3071 017 MIQS 8 SG Ø 7.5 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3071 024 All order numbers valid for 1064 nm. Subject to technical changes LINOS Pockels Cells
KD*P-Pockels Cells CPC Series
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • Compact design for OEM applications • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
• Optionally available as dry, immersion (IM) CPC 8 (IM) (SG) or Sol-Gel (SG) version • Optionally available with λ/4 disk: CPC n (IM) (SG) WP
• Other specifi cations upon request • Please state the applied wavelength 34 when ordering
CPC 10 (IM) (SG)
CPC 12 (IM) (SG)
KD*P Pockels Cells CPC Series
Pro duc t Clear Aperture Transmission Extinction ratio1) λ/4 voltage Capacity Order-No (mm) typical (%) (voltage-free) (pF)
CPC 8 Ø 8 91 > 3000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3091 001 CPC 8 IM Ø 8 98 > 3000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3092 001 CPC 8 SG Ø 7.5 98 > 3000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3093 000 CPC 10 Ø 10 91 > 3000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3094 000 CPC 10 IM Ø 10 98 > 3000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3094 001 CPC 10 SG Ø 9.5 98 > 3000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3096 000 CPC 12 Ø 12 91 > 3000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3097 000 CPC 12 IM Ø 12 98 > 3000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3098 000 CPC 12 SG Ø 11 98 > 3000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3099 000 1) > 1000 : 1 λ/2-voltage applied Subject to technical changes All order numbers valid for 1064 nm. LINOS Pockels Cells
KD*P Pockels Cells CIQS Series
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • With integrated, pre-adjusted Brewster polarizer • Compact design for OEM applications • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) CIQS 8 (IM) (SG) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: CIQS n (IM) (SG) WP
• Other specifi cations upon request 35 • Please state the applied wavelength when ordering
CIQS 10 (IM) (SG)
CIQS 12 (IM) (SG)
KD*P Pockels Cells CIQS Series
Prod uct Clear Aperture Transmission Extinction ratio λ/4 voltage Capacity Order-No (mm) typical (%) (voltage-free) (pF)
CIQS 8 Ø 8 88 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3070 000 CIQS 8 IM Ø 8 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 51 3010 0004 CIQS 8 SG Ø 7.5 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3071 022 CIQS 10 Ø 10 88 > 500:1 3.2 kV at 1064 nm, 20°C 6 84 50 3073 000 CIQS 10 IM Ø 10 95 > 500:1 3.2 kV at 1064 nm, 20°C 6 84 50 3074 001 CIQS 10 SG Ø 9.5 95 > 500:1 3.2 kV at 1064 nm, 20°C 6 84 50 3075 001 CIQS 12 Ø 12 88 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3076 000 CIQS 12 IM Ø 12 95 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3077 000 CIQS 12 SG Ø 11 95 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3078 002 All order numbers valid for 1064 nm. Subject to technical changes LINOS Pockels Cells
KD*P Pockels Cells SPC 4 Series
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • Very compact design for OEM applications • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
SPC 4 (IM) (SG) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with integrated, pre-adjusted Brewster polarizer • Optionally available with λ/4 disk: SPC4 (IM) (SG) WP
36 • Other specifi cations upon request • Please state applied wavelength when ordering
KD*P Pockels Cells SPC 4 Series
Pro duct Clear aperture Transmission Extinction ratio λ/4 voltage Capacity (pF) Order-No (mm) typical (%) (voltage-free)
SPC 4 Ø 4 91 > 3000:1 3.2 kV at 1064 nm, 20°C 2 84 50 3036 007 SPC 4 IM Ø 4 98 > 3000:1 3.2 kV at 1064 nm, 20°C 2 84 50 3036 004 SPC 4 SG Ø 3.5 98 > 3000:1 3.2 kV at 1064 nm, 20°C 2 84 50 3052 001 All order numbers valid for 1064 nm, maximum voltage 4 kV. Subject to technical changes
A closer look
The compact size of approx. 13 x 15 x 16 mm² enables size critical OEM-applications. LINOS Pockels Cells
KD*P Double Pockels Cells DPZ Series
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • Two crystals in series • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
• Optionally available as dry, immersion (IM) or Sol-Gel (SG) version DPZ 8 • λ/4 voltage: 1.6 kV at 1064 nm, 20°C
• Other specifi cations on request • Please state the applied wavelength when ordering 37
DPZ 8 (IM)
DPZ 8 (SG)
KD*P Double Pockels Cells DPZ Series
Pro duct Clear aperture Transmission Extinction ratio λ/2- voltage Capacity Order-No (mm) typical (%) (voltage-free) (pF)
DPZ 8 Ø 8 84 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3041 001 DPZ 8 IM Ø 8 95 > 1000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3042 000 DPZ 8 SG Ø 7.5 95 > 1000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3043 005 All order numbers valid for 1064 nm. Subject to technical changes LINOS Pockels Cells
KD*P Brewster Pockels Cell BPC 8
• KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • Crystal with Brewster angle cut • No coatings • High transmission for lasers with low amplifi cation
• Beam offset: 8.4 mm • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
• Other specifi cations on request • Please state the applied wavelength 38 when ordering
KD*P Brewster Pockels Cell BPC 8
Prod uct Clear aperture Transmission Extinction ratio λ/4 voltage Capacity (pF) Order-No (mm) typical (%) (voltage-free)
BPC 8 Ø 7.4 99 > 1000:1 2.5 kV at 755 nm, 20°C 4 84 50 3034 001 Subject to technical changes LINOS Pockels Cells
LiNbO3 Pockels Cells
• LiNbO3-based Pockels cell • Preferably for Er:YAG-, Ho:YAG-, Tm:YAG-laser • For wavelengths up to 3 μm • Brewster cells BPZ 5 IR for laser with low amplifi cation • Compact design LM 7 IR • Wave front deformation: < λ/4 • Damage threshold: > 100 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
• Other specifi cations on request • Please state the applied wavelength when ordering 39
LM 9 IR
BPZ 5 IR
LiNbO3 Pockels Cells
Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4-voltage (kV) Order-No
LM 7 IR1) 7.45 x 7.45 > 98 >100:1 3kV1) 84 50 3030 001 LM 9 IR2) 9 x 9 > 98 >100:1 4.5kV2) 84 50 3032 001 BPZ 5 IR 5 x 5 > 99 >100:1 1.9kV1) 84 51 3040 0003
1) 2 μm wavelength Subject to technical changes 2) 3 μm wavelength LINOS Pockels Cells
BBO Pockels Cells BBPC Series
• BBO-based Pockels cell • Suited for Q-switch applications with high repetition rates • Wave front deformation: < λ/4 • Damage threshold: > 300 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed)
BBPC • Optionally available with integrated Brewster polarizer: BBPC n BP • Optionally available with integrated λ/ 4 disk: BBPC n WP • Optionally available with Piezo attenuator: BBPC n pp
40 • Other specifi cations on request • Please state the applied wavelength when ordering
BBO Pockels Cells BBPC Series
Prod uct Clear aperture Transmission typical Extinction ratio λ/4-voltage 1) Capacity Order-No (mm) (%) (voltage-free) (pF)
BBPC 3 Ø2.6 98 >1000:1 3.6kV 4 84 50 3083 012 BBPC 4 Ø3.6 98 >1000:1 4.8kV 4 84 50 3083 008 BBPC 5 Ø4.6 98 >1000:1 6.0kV 4 84 50 3083 020 1) DC at 1064 nm Subject to technical changes All order numbers valid for 1064 nm. LINOS Pockels Cells
BBO Double Pockels Cells DBBPC Series
• BBO-based double Pockels cell • Two crystals in series • With Piezo attenuator • Suited for Q-switch applications with high repetition rates • Damage threshold: > 300 MW / cm2 at 1064 nm, 10 ns, 1 kHz (typical, not DBBPC guaranteed)
• Other specifi cations on request • Please state the applied wavelength when ordering
41
Double BBO Pockels Cells DBBPC Series
Prod uct Clear aperture Transmission typical Extinction ratio λ/4-voltage 1) Capacity Order-No (mm) (%) (voltage-free) (pF)
DBBPC 3 Ø2.6 98 > 1000:1 1.8kV 8 84 51 3020 0010 DBBPC 4 Ø3.6 98 > 1000:1 2.4kV 8 84 51 3020 0011 DBBPC 5 Ø4.6 98 > 1000:1 3.0kV 8 84 51 3020 0001 DBBPC 6 Ø5.6 98 > 1000:1 3.6kV 8 84 51 3020 0008 1) DC at 1064 nm Subject to technical changes All order numbers valid for 1064 nm.
High quality
All pockels cells series DBBPC feature a piezodamping and are ideally suited for applications which require a precise switch. LINOS Pockels Cells
RTPC Pockels Cells Series
• RTP-based Pockels cell • Suited for Q-switch applications with high repetition rates • Two crystals in compensation layout • Wave front deformation: < λ/4 • Damage threshold: > 600 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • SC version with short crystals
RTPC 4 SC • Optionally available with integrated Brewster polarizer: RTPC n BP • Optionally available with integrated λ/4 disk: RTPC n WP
42 • Other specifi cations on request • Please state the applied wavelength when ordering
RTPC 3, RTPC 4
RTPC Pockels Cells Series
Prod uct Clear aperture Transmission Extinction ratio λ/4 voltage 1) Capacity Order-No (mm) typical (%) (voltage-free) (pF)
RTPC 3 Ø2.6 98 > 200:1 0.5kV 3 84 50 3080 018 RTPC 4 SC Ø3.6 98 > 200:1 1.3kV 3 84 50 3080 021 RTPC 4 Ø3.6 98 > 200:1 0.65kV 3 84 51 3030 0007 1) DC at 1064 nm Subject to technical changes All order numbers valid for 1064 nm
High quality
An extremely low switch-voltage combined with high damaging threshold enable applications where a precise switching with high repetition rates and very fast drivers is essential. LINOS Pockels Cells
Pockels Cells Positioner
• Compact and stable design • Easy adjustment of yaw, pitch and rotation • Adjustment via fi ne thread screws
• For Pockels cells with a diameter of up to 35 mm • Optionally special OEM modifi cations available
Positioner 25 (Pockels cell shown not included)
43
Positioner 35 (Pockels cells shown not included)
Pockels Cells Positioner
Product Diameter Pockels cell Tilt range Beam height Dimensions Order-No (mm) (mm) (mm3)
Positioner 25 12.7 ±4° 24 46 x 46 x 40 84 50 3021 127 Positioner 25 19 ±4° 24 46 x 46 x 40 84 50 3021 190 Positioner 25 21 ±4° 24 46 x 46 x 40 84 50 3021 210 Positioner 25 23 ±4° 24 46 x 46 x 40 84 50 3021 230 Positioner 25 25 ±4° 24 46 x 46 x 40 84 50 3021 250 Positioner 25 25.4 ±4° 24 46 x 46 x 40 84 50 3021 254 Positioner 35 35 ±4° 24 56 x 54 x 40 84 50 3021 350 Subject to technical changes LINOS Pockels Cells
Pockels Cells - Questionnaire
QIOPTIQ Photonics GmbH & Co. KG Crystal Technology Phone +49(0)89 255 458-100 Hans-Riedl-Straße 9 Fax +49(0)89 255 458-895 85622 Feldkirchen E-mail [email protected] Germany Internet www.qioptiq.com
• Full Name: ______• Phone: ______• Company Name: ______• Fax: ______• Address: ______• Zip Code: ______• City: ______• Country: ______
1. Laser Pulse Parameter at Location of Pockels Cell1) 1.1 Wavelength [nm] ______44 1.2 Laser Active Medium ______1.3 Beam Diameter, 1/e2 [mm] ______1.4 Laser Pulse Energy1) ______1.5 Laser Pulse Duration ______1.6 Operating mode, (Mode Locking, Q-switch, Pulse Picking, Intensity Modulation) ______
2. Type of Pockels Cell 2.1 Hard Aperture [mm] ______2.2 Transmission[%] ______2.3 Maximum Extinction [1:x] ______2.4 Crystal [KD*P, BBO, RTP] ______2.5 Operation mode (single pass or double pass)[λ/4 or λ/2] ______
3. Timing Requirements of High Voltage Switch 3.1 Regenerative / Pulse Picker / Q - Switch ______3.2 For Regenerative Amplifi er / Pulse Picker: - Trigger Electronics for RVD required [Yes/No] ______- Repetition Rate of Master Osc. [MHz] ______- Repetition Rate of Regen. Amp. [kHz] ______- max. rise / fall time of rectangular HV pulse [ns] ______- min. / max. temporal width of rectangular HV pulse [ns] ______- range of plateau voltage ______3.3 For Q-switched Laser - ON / OFF Q-Switching ______- Rep. Rate of Q-switched Laser [kHz] ______
4. Accessories 4.1 Brewsterplate Polarizer [Yes / No] ______4.2 λ/4 - Plate (for ON-Q-Switching) [Yes / No] ______
5. Miscellaneous 5.1 Temperature @ operation [°C] ______5.2 Humidity @ operation [%] ______5.3 Year [No. of Units] Target Price / Unit ______
6. Comments / Remarks: ______
1) EPC = EOP/(1-R), EPC: pulse energy at location of Pockels cell; EOP: pulse energy at output of laser; R: refl ectivity of output coupler; regenerative amplifi er: at the end of the amplifi cation cycle LINOS Laser Modulators
Laser Modulators
Technical Overview If the laser beam is polarized in the direction of Electro-optical crystals are characterized by their the optical axis, no polarization rotation, but pure ability to change optical path length in function of an phase retardation will occur. In principle this allows applied external voltage. This change depends on the the user to operate the LM 0202 modulator as a direction of polarization of the irradiated light. At λ/2 phase modulator. In this confi guration, optimized voltage, the path length difference of orthogonally for minimum background retardation, two of the polarized beams is just half of the wavelength. With four crystals are electro-optically active for phase a suitable orientation of the crystals, the polarization modulation. A special model, LM 0202 PHAS, is direction of the irradiated light is rotated 90°: in this available with a crystal confi guration that uses all state the light is extinguished by a polarizer. Varying four crystals for phase modulation. the applied voltage allows quick modulation of the 45 laser beam intensity. The performance of an electro- The PM 25 phase modulator, is a Brewster modulator optic modulator can be understood very simply as of high optical quality and should be used for that of a retardation plate with electrically adjustable loss sensitive applications, especially intracavity retardation. modulation. Mounting the modulator in the resonator is simple, as there is no beam deviation or LM 0202 series modulators use the transverse displacement. electro-optical effect: the direction of the light beam and electric fi eld are orthogonal. In this confi guration, All modulators use electro-optical crystals that long crystals with a small cross section have a low possess strong natural birefringence. The crystals are halfwave voltage used in order of compensation and there is no beam deviation or displacement. Since most of the electro-optical crystals operate with a strong background of natural birefringence, Electro-optic modulators generally require linearly a compensation scheme is used. Each modulator in polarized laser light. If the laser light is not suffi ciently the LM 0202 series has four crystals as a matched polarized by itself, an additional polarizer must be ensemble. These crystals are fabricated with used. deviations in length less than 100 nm. The crystals are operated optically in series and electrically parallel. The LM 0202 P intensity modulator has an integrated polarizer that is used as an analyzer. The crystal orientation of the LM 0202 and LM 0202P modulators has been optimized to minimize the The modulator voltage input plugs are isolated from retardation caused by natural birefringence. Just as in the housing and directly connected to the crystals. A an ordinary retardation plate, the polarization of the change of the laser intensity can be observed when laser beam has to be adjusted at 45° to the optical the applied voltage is changed. By subsequently axis in order to achieve a proper 90° rotation. adjusting voltage and rotation, an extinction better than 250:1 can be achieved. Selected models with better extinction ratios are available on request. LINOS Laser Modulators
Operating an electro-optical modulator between crossed, or parallel, polarizers yields an intensity variation given by the following formula: Applications The LM 0202 or LM 13 series electro-optical
2 I = Io · sin (U/Uλ/2 · π/2) modulators are typically used when intensity,
Uλ/2 - half wave voltage power, phase or polarization state modulation is
Io - input intensity required. The devices are ideal for continuous or U - signal voltage pulsed laser applications. Standard models, in many confi gurations, are available for wavelength ranges It has been assumed that the appropriate offset or for defi nite wavelengths between 250 to 1100 nm 46 voltage has been applied for maximum extinction. and operation up to 3000 nm is possible with special The offset voltage causes a shift of the intensity curve crystals. over the voltage. The halfwave voltage is proportional to the wavelength λ, to the crystal thickness d and in The modulators are typically used with diode lasers, reverse proportional to the crystal length l: solid state lasers, ion lasers, gas lasers or white light lasers.
These devices are being used in the fi elds of
Here n0 is the refractive index of the ordinary beam reprography, stereo lithography, laser projection,
and r63 the electro-optical coeffi cient of the crystal. optical storage, printing, research and development and communication engineering in the laser industry. In many cases it is advantageous to select an offset voltage such that the fi rst order intensity varies The PM 25 and PM-CBB series are typically used linearly with voltage. This is achieved by setting the for fast intra-cavity phase modulation. Therefore offset voltage to the value required for maximum very fast control loops, with high feedback gain for extinction minus frequency and phase stabilization, can be constructed
½ · Uλ/2 for precision lasers.
The LM 0202 series modulators are hermetically Selection Criteria sealed. They can be operated at pressures from The required wavelength and aperture are determined 100 mbar to 1500 mbar and at a temperature range based on the existing laser system. Very high laser between 0°C to 50°C. power, in the multiwatt range, requires a large aperture. Laser lines in the short wave spectral region Standard models are designed for horizontal can work problem free with modulators having low operation. Modulators for vertical use are available by electro-optical sensitivity: this gives rise to advantages request. The modulator windows are easily cleaned in bandwidth and size. A Brewster modulator of with a mild organic solvent. high optical quality should be used for loss sensitive applications, especially intracavity modulation. LINOS Laser Modulators
Digital Pulse Amplifi er LIV 20-iso
• For all laser modulators with λ/2 voltage • Housing Specifi cations: up to 400 V - Dimensions (WxLxH) 260x330x155 mm • High repetition rate - Weight: app. 9.5 kg • Compact design - Power cord and connecting cable to Modulator included • Output Specifi cations: - Signal voltage1)2): 70 - 420 V 1) Relative to ground - Rise-/falltime (10 - 90%)3): 2) This voltage can be set manually or < 15 ns, typ. 10 ns externally with a control voltage 0 to - Repetition rate4): 2 to 20 MHz (depends + 10 V (input impendance 5 k) on signal voltage) 3) Optical risetime achieved with a - Offset-voltage 1) 2): 0 - 400 V modulator LM 0202, connected with special cable (l = 80 cm) • Input Specifi cations: 4) Maximum signal voltage for 5 MHz - Impedance 5): pulse 50 / 600 Ω / operation is 200 V. maximum repetition mod. 600 Ω rate for 400 V signal voltage is 2 MHz 47 - Low state: 0 V to + 0.4 V 5) Modulation allows gating of signal - High state: 2.4 V to + 5.5 V output - Trigger threshold: + 1.5 V - Minimum pulse width : > 30 ns LIV 20-iso - Input-output delay, typ.: 50 ns - Input-output jitter: < 1 ns Product Order-No - Line Voltage: 230 / 115 V - Line Frequency: 50 / 60 Hz Digital Pulse Amplifi er LIV 20-iso 84 50 2061 000
Sine-Amplifi er for Phase Modulators
• Compact design Sine-Amplifi er • Can be used with PM-C-BB, PM25, LM13 and LM0202 Product Order-No • Large modulation bandwidth Sine-Amplifi er • High output voltage 84 51 8000 0014 for Phase Modulators • Cost effective • Modulator cable and adapters included • Power-supply included (on request with snap-in multi-plug) • Input waveform: SINE-Wave • Input voltage: max. +13dBm • Bandwidth with LM0202 : appr. 4-7 MHz • Bandwidth with PM-C-BB: appr. 5-12 MHz • Max. Output Voltage with LM0202 appr. 200 V @ 5-7 MHz frequency • Max. Output Voltage with PM-C-BB appr. 500 V @ 8-12 MHz frequency • Supply-Voltage (Power-Supply incl.): +12V DC • Dimensions: 115x65x70 mm LINOS Laser Modulators
Phase Modulator PM 25
• Two crystals at Brewster angle in order of compensation • With Brewster windows • Very high transmission • Connectors: 4 mm banana plugs • Different versions for wavelength ranges between 250 and 1100 nm
• Wavefront distortion < λ/10 at 633 nm • Bandwidth (3 dB) 100 MHz • Capacitance 30 pF • Max. continuous voltage 1500 V • Operating temperature 10 - 45°C • Weight approx. 500 g
48 • Please specify the wavelength or wavelength range and laser parameters when ordering.
Phase Modulator PM 25
Prod uct Wavelengths Power capability (W) Transmission Aperture λ/10-voltage at Order-No (nm) (%) (mm) 633 nm (V)
PM ADP 400-650 100 W (> 400 nm), 10 W (< 400 nm) > 98 5 x 5 200 ±10% 84 50 2030 000 PM KD*P 250-1100 100 W (> 400 nm), 10 W (< 400 nm) > 98 5 x 5 200 ±10% 84 50 2031 000 Subject to technical changes LINOS Laser Modulators
Phase Modulator PM-C-BB
• Brewster-cut MgO-LiNbO3 crystal • High photorefractive damage threshold • Broad wavelength range 450 ± 3000 nm • High transmission • Compact design • Small residual amplitude modulation • Connector: 1 x SMA • Wavefront distortion < λ/4 at 633 nm • Bandwidth DC-500 MHz (> 10 MHz resonance-free)
49
Phase Modulator PM-C-BB
Product Wavelength Power capability at Transmis sion2) Aperture λ/10-Voltage at Order-No (nm) 1064 nm1) (Clear Apertur) 1064 nm
PM-C-BB 450-3000 > 100 W / mm2 > 98% (680 - 2000 nm) 1.9 mm (1.5 mm) 100 V ± 10% 84 51 2090 0006 PM-C-BB (T)3) 450-3000 > 100 W / mm2 > 98% (680 - 2000 nm) 1.9 mm (1.5 mm) 100 V ± 10% 84 51 2090 0007 Adapter plate for 1" mirror mount 84 51 2090 0008
1) CW operation, depends on wavelength Subject to technical changes 2) excluded: LiNbO3 absorption at 2.82 - 2.84 μm 3) with built-in active temperature stabilization (< 10 mK) LINOS Laser Modulators
Laser Modulators LM 13
• Different versions: Universal modulator, Intensity modulator (P) with thin fi lm polarizer, Phase modulator (PHAS) • With 2 crystals in order of compensation • Connectors: 4 mm banana plugs • Different versions for wavelength ranges between 250 and 1100 nm
• Extinction 1) > 250:1 (VIS, IR) or > 100:1 (UV) • Wavefront distortion < λ /4 at 633 nm • Bandwidth (3 dB) 100 MHz • Capacitance 46 pF • Max. continuous voltage 800 V • Operating temperature 10 - 45°C • Weight approx. 500 g 50 1) Extinction: measured at continuous wave between crossed polarizers. Please specify the wavelength or wavelength range and laser parameters when ordering.
LM 13 (P) (PHAS)
LM 13 UV KD*P
Produc t Wavelengths Power capability Transmission2) Aperture λ/2-voltage at Order-No (nm) (W) (%) (mm) 355 nm (V)
LM 13 250-310 0.1 > 91 / 88 Ø 1.5 240 ± 10% 84 50 2020 020 LM 13 250-310 0.1 > 91 / 88 Ø 3.5 390 ± 10% 84 50 2021 020 LM 13 300-390 1.0 > 95 / 92 Ø 1.5 240 ± 10% 84 50 2023 019 LM 13 300-390 1.0 > 95 / 92 Ø 3.5 390 ± 10% 84 50 2024 019 LM 13 P 250-310 0.1 > 91 / 88 Ø 1.5 240 ± 10% 84 50 2026 020 LM 13 P 250-310 0.1 > 91 / 88 Ø 3.5 390 ± 10% 84 50 2027 020 LM 13 P 300-390 1.0 > 95 / 92 Ø 1.5 240 ± 10% 84 50 2029 019 LM 13 P 300-390 1.0 > 95 / 92 Ø 3.5 390 ± 10% 84 50 2030 019 LM 13 PHAS 250-310 0.1 > 91 / 88 Ø 1.5 240 ± 10% 84 50 2032 020 LM 13 PHAS 250-310 0.1 > 91 / 88 Ø 3.5 390 ± 10% 84 50 2033 020 LM 13 PHAS 300-390 1.0 > 95 / 92 Ø 1.5 240 ± 10% 84 50 2035 019 LM 13 PHAS 300-390 1.0 > 95 / 92 Ø 3.5 390 ± 10% 84 50 2036 019
2) Transmission: measured without / with polarizing beamsplitter cube. Subject to technical changes LINOS Laser Modulators
StandardPlus
Modulators series LM 13 are also
available with the crystal LiTaO3 - as universal or intensity modulator.
LM 13 VIS KD*P
Product Wavelengths Power capability Transmission2) Aperture λ/2-voltage at Order-No (nm) (W) (%) (mm) 633 nm (V)
LM 13 400-850 0.1 > 98 / 95 3 x 3 420 ± 10% 84 50 2020 000 LM 13 400-850 0.1 > 98 / 95 5 x 5 700 ± 10% 84 50 2021 000 LM 13 400-850 5.0 > 95 / 92 3 x 3 420 ± 10% 84 50 2023 000 LM 13 400-850 5.0 > 95 / 92 5 x 5 700 ± 10% 84 50 2024 000 LM 13 P 400-850 0.1 > 98 / 95 3 x 3 420 ± 10% 84 50 2026 000 51 LM 13 P 400-850 0.1 > 98 / 95 5 x 5 700 ± 10% 84 50 2027 000 LM 13 P 400-850 5.0 > 95 / 92 3 x 3 420 ± 10% 84 50 2029 000 LM 13 P 400-850 5.0 > 95 / 92 5 x 5 700 ± 10% 84 50 2030 010 LM 13 PHAS 400-850 0.1 > 98 / 95 3 x 3 420 ± 10% 84 50 2032 000 LM 13 PHAS 400-850 0.1 > 98 / 95 5 x 5 700 ± 10% 84 50 2033 000 LM 13 PHAS 400-850 5.0 > 95 / 92 3 x 3 420 ± 10% 84 50 2035 000 LM 13 PHAS 400-850 5.0 > 95 / 92 5 x 5 700 ± 10% 84 50 2036 000 2) Transmission: measured without / with polarizing beamsplitter cube. Subject to technical changes
LM 13 IR KD*P
Product Wavelengths Power capability Transmission2) Aperture λ/2-voltage at Order-No (nm) (W) (%) (mm) 1064 nm (V)
LM 13 650-1000 5.0 > 95 / 92 3 x 3 710 ± 10% 84 50 2023 015 LM 13 950-1100 5.0 > 94 / 91 3 x 3 710 ± 10% 84 50 2023 016 LM 13 P 650-1000 5.0 > 95 / 92 3 x 3 710 ± 10% 84 50 2029 015 LM 13 P 950-1100 5.0 > 94 / 91 3 x 3 710 ± 10% 84 50 2029 016 LM 13 PHAS 650-1000 5.0 > 95 / 92 3 x 3 710 ± 10% 84 50 2035 015 LM 13 PHAS 650-1000 5.0 > 95 / 92 5 x 5 1180 ± 10% 84 50 2036 015 LM 13 PHAS 950-1100 5.0 > 94 / 91 3 x 3 710 ± 10% 84 50 2035 016 LM 13 PHAS 950-1100 5.0 > 94 / 91 5 x 5 1180 ± 10% 84 50 2036 016 2) Transmission: measured without / with polarizing beamsplitter cube. Subject to technical changes
LM 13 IR KD*P High Power
Product Wavelengths Power capability Transmission2) Aperture λ/2-voltage at Order-No (nm) (W) (%) (mm) 1064 nm (V)
LM 13 700-950 10 > 94 / 91 Ø1.0 710 ± 10% 84 50 2023 017 LM 13 950-1100 20 > 93 / 90 Ø1.0 710 ± 10% 84 50 2023 018 LM 13 P 700-950 10 > 94 / 91 Ø1.0 710 ± 10% 84 50 2029 017 LM 13 P 950-1100 20 > 93 / 90 Ø1.0 710 ± 10% 84 50 2029 018 LM 13 PHAS 700-950 10 > 94 / 91 Ø1.0 710 ± 10% 84 50 2035 017 LM 13 PHAS 700-950 10 > 94 / 91 Ø3.0 1180 ± 10% 84 50 2036 017 LM 13 PHAS 950-1100 20 > 93 / 90 Ø1.0 710 ± 10% 84 50 2035 018 LM 13 PHAS 950-1100 20 > 93 / 90 Ø3.0 1180 ± 10% 84 50 2036 018 2) Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes LINOS Laser Modulators
Laser Modulators LM 0202
• Different versions: Universal modulator, 1) Extinction: measured at continuous wave Intensity modulator (P) with thin fi lm between crossed polarizers. polarizer, Phase modulator (PHAS) Please specify the wavelength or • With 4 crystals in order of compensation wavelength range and laser parameters • Connectors: 4 mm banana plugs when ordering. • Different versions for wavelength ranges LM 0202 (P) (PHAS) between 250 and 1100 nm
• Extinction 1) > 250:1 (VIS, IR) or > 100:1 (UV) StandardPlus • Wavefront distortion < λ/4 at 633 nm • Bandwidth (3 dB) 100 MHz Modulators series LM 0202 are • Capacitance 82 pF also available with the crystal • Max. continuous voltage 800 V LiTaO - as universal or intensity • Operating temperature 10 - 45°C 3 • Weight approx. 800 g modulator. 52
LM 0202 UV KD*P
Product Wavelengths Power capability Transmission1) Aperture λ/2-voltage (355 nm) Order-No (nm) (W) (%) (mm) (V)
LM 0202 250-310 0.1 > 88 / 85 Ø 1.5 120 ± 10% 84 50 2040 003 LM 0202 250-310 0.1 > 88 / 85 Ø 3.5 200 ± 10% 84 50 2041 003 LM 0202 300-390 1 > 93 / 90 Ø 1.5 120 ± 10% 84 50 2049 007 LM 0202 300-390 1 > 93 / 90 Ø 3.5 200 ± 10% 84 50 2050 011 LM 0202 P 250-310 0.1 > 88 / 85 Ø 1.5 120 ± 10% 84 50 2043 003 LM 0202 P 250-310 0.1 > 88 / 85 Ø 3.5 200 ± 10% 84 50 2044 004 LM 0202 P 300-390 1 > 93 / 90 Ø 1.5 120 ± 10% 84 50 2052 013 LM 0202 P 300-390 1 > 93 / 90 Ø 3.5 200 ± 10% 84 50 2053 006 LM 0202 PHAS 250-310 0.1 > 88 / 85 Ø 1.5 120 ± 10% 84 50 2046 004 LM 0202 PHAS 250-310 0.1 > 88 / 85 Ø 3.5 200 ± 10% 84 50 2047 004 LM 0202 PHAS 300-390 1 > 93 / 90 Ø 1.5 120 ± 10% 84 50 2055 010 LM 0202 PHAS 300-390 1 > 93 / 90 Ø 3.5 200 ± 10% 84 50 2056 006 1) Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes
LM 0202 VIS ADP
Product Wavelengths Power capability Transmission1) Aperture λ/2-voltage (633 nm) Order-No (nm) (W) (%) (mm) (V)
LM 0202 400-650 0.1 > 97 / 94 3 x 3 210 ± 10% 84 50 2001 000 LM 0202 400-650 0.1 > 97 / 94 5 x 5 350 ± 10% 84 50 2002 000 LM 0202 400-650 5.0 > 92 / 89 3 x 3 210 ± 10% 84 50 2010 000 LM 0202 400-650 5.0 > 92 / 89 5 x 5 350 ± 10% 84 50 2011 000 LM 0202 P 400-650 0.1 > 97 / 94 3 x 3 210 ± 10% 84 50 2004 000 LM 0202 P 400-650 0.1 > 97 / 94 5 x 5 350 ± 10% 84 50 2005 000 LM 0202 P 400-650 5.0 > 92 / 89 3 x 3 210 ± 10% 84 50 2013 000 LM 0202 P 400-650 5.0 > 92 / 89 5 x 5 350 ± 10% 84 50 2014 000 LM 0202 PHAS 400-650 0.1 > 97 / 94 3 x 3 210 ± 10% 84 50 2007 000 LM 0202 PHAS 400-650 0.1 > 97 / 94 5 x 5 350 ± 10% 84 50 2008 000 LM 0202 PHAS 400-650 5.0 > 92 / 89 3 x 3 210 ± 10% 84 50 2016 000 LM 0202 PHAS 400-650 5.0 > 92 / 89 5 x 5 350 ± 10% 84 50 2017 000 1) Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes LINOS Laser Modulators
LM 0202 VIS KD*P
Product Wavelengths Power capability Transmission1) Aperture λ/2-voltage (633 nm) Order-No (nm) (W) (%) (mm) (V)
LM 0202 400-850 0.1 > 97 / 94 3 x 3 210 ± 10% 84 50 2040 000 LM 0202 400-850 0.1 > 97 / 94 5 x 5 350 ± 10% 84 50 2041 000 LM 0202 400-850 5.0 > 92 / 89 3 x 3 210 ± 10% 84 50 2049 000 LM 0202 400-850 5.0 > 92 / 89 5 x 5 350 ± 10% 84 50 2050 005 LM 0202 P 400-850 0.1 > 97 / 94 3 x 3 210 ± 10% 84 50 2043 000 LM 0202 P 400-850 0.1 > 97 / 94 5 x 5 350 ± 10% 84 50 2044 000 LM 0202 P 400-850 5.0 > 92 / 89 3 x 3 210 ± 10% 84 50 2052 000 LM 0202 P 400-850 5.0 > 92 / 89 5 x 5 350 ± 10% 84 50 2053 000 LM 0202 PHAS 400-850 0.1 > 97 / 94 3 x 3 210 ± 10% 84 50 2046 000 LM 0202 PHAS 400-850 0.1 > 97 / 94 5 x 5 350 ± 10% 84 50 2047 000 LM 0202 PHAS 400-850 5.0 > 92 / 89 3 x 3 210 ± 10% 84 50 2055 000 LM 0202 PHAS 400-850 5.0 > 92 / 89 5 x 5 350 ± 10% 84 50 2056 000 1) Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes 53
LM 0202 IR KD*P
Product Wavelengths Power capability Transmission1) Aperture λ/2-voltage (1064 nm) Order-No (nm) (W) (%) (mm) (V)
LM 0202 650-1000 5.0 > 92 / 89 3 x 3 360 ± 10% 84 50 2049 001 LM 0202 650-1000 5.0 > 92 / 89 5 x 5 590 ± 10% 84 50 2050 006 LM 0202 950-1100 5.0 > 90 / 87 3 x 3 360 ± 10% 84 50 2049 004 LM 0202 950-1100 5.0 > 90 / 87 5 x 5 590 ± 10% 84 50 2050 007 LM 0202 P 650-1000 5.0 > 92 / 89 3 x 3 360 ± 10% 84 50 2052 001 LM 0202 P 650-1000 5.0 > 92 / 89 5 x 5 590 ± 10% 84 50 2053 001 LM 0202 P 950-1100 5.0 > 90 / 87 3 x 3 360 ± 10% 84 50 2052 004 LM 0202 P 950-1100 5.0 > 90 / 87 5 x 5 590 ± 10% 84 50 2053 002 LM 0202 PHAS 650-1000 5.0 > 92 / 89 3 x 3 360 ± 10% 84 50 2055 006 LM 0202 PHAS 650-1000 5.0 > 92 / 89 5 x 5 590 ± 10% 84 50 2056 001 LM 0202 PHAS 950-1100 5.0 > 90 / 87 3 x 3 360 ± 10% 84 50 2055 001 LM 0202 PHAS 950-1100 5.0 > 90 / 87 5 x 5 590 ± 10% 84 50 2056 002 1) Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes
LM 0202 IR KD*P High Power
Product Wavelengths Power capability Transmission1) Aperture λ/2-voltage (1064 nm) Order-No (nm) (W) (%) (mm) (V)
LM 0202 700-950 10 > 91 / 88 Ø 1.0 360 ± 10% 84 50 2049 006 LM 0202 700-950 10 > 91 / 88 Ø 3.0 590 ± 10% 84 50 2050 010 LM 0202 950-1100 20 > 89 / 86 Ø 1.0 360 ± 10% 84 50 2049 005 LM 0202 950-1100 20 > 89 / 86 Ø 3.0 590 ± 10% 84 50 2050 008 LM 0202 P 700-950 10 > 91 / 88 Ø 1.0 360 ± 10% 84 50 2052 012 LM 0202 P 700-950 10 > 91 / 88 Ø 3.0 590 ± 10% 84 50 2053 005 LM 0202 P 950-1100 20 > 89 / 86 Ø 1.0 360 ± 10% 84 50 2052 011 LM 0202 P 950-1100 20 > 89 / 86 Ø 3.0 590 ± 10% 84 50 2053 003 LM 0202 PHAS 700-950 10 > 91 / 88 Ø 1.0 360 ± 10% 84 50 2055 009 LM 0202 PHAS 700-950 10 > 91 / 88 Ø 3.0 590 ± 10% 84 50 2056 005 LM 0202 PHAS 950-1100 20 > 89 / 86 Ø 1.0 360 ± 10% 84 50 2055 008 LM 0202 PHAS 950-1100 20 > 89 / 86 Ø 3.0 590 ± 10% 84 50 2056 004 1) Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes Laser Modulators
Laser Modulators - Questionnaire
QIOPTIQ Photonics GmbH & Co. KG Crystal Technology Hans-Riedl-Straße 9 85622 Feldkirchen Germany
Phone +49(0)89 255 458-100 Fax +49(0)89 255 458-895 E-mail [email protected] Internet www.qioptiq.com
• Full Name: ______• Phone: ______• Company Name: ______• Fax: ______• Address: ______• Zip Code: ______• City: ______54 • Country: ______1. Laser Pulse Parameter at Location of Modulator 1.1 Wavelength [nm] ______1.2 Continuous-Wave Laser Power [W] ______1.3 Beam Diameter, 1/e2 [mm] ______1.4 Laser Pulse Energy ______1.5 Laser Pulse Duration [ns] ______1.6 Repetition Rate [MHz] ______
2. Type of Modulator 2.1 Hard Aperture [mm] ______2.2 Transmission [%] ______2.3 Maximum Extinction [1:x] ______2.4 Crystal [KD*P, ADP] ______2.5 Number of crystals (2 or 4) ______2.6 Universal-, Intensity-, Phase-Modulator ______
3. If a driver (Amplifi er) is required... 3.1 Digital- or Analog-Amplifi er ______3.2 Switching Voltage [V] ______3.3 Rise-/Fall-Time [ns] ______3.4 Duration [ns] ______3.1 Repetition Rate [MHz] ______
4. Estimate Number of Units 4.1 Year [No. of Units] Target Price/Unit ______
5. Comments / Remarks: ______… coming soon …
Laser Power Stabilization Series
• Operation modes:
- Modulation: (no stabilization) up to 2 kHz
- Setpoint: Stabilization to preset transmission value
- Autolock: Stabilization to maximum possible
transmission value
• Optical output stability < 0.1% (1h)
• Large stabilization bandwidth DC – 300 kHz
• Optional wireless photodiode for external stabilization 55 • USB interface
Compact two stage Faraday Isolator Series
High isolation (> 60dB) and high transmission at further reduced size for space critical applications
FI-780-5 TVC Outer dimensions: FI-780-TV: 40 x 40 x 106 mm New TVC verion: 40 x 40 x 78 mm
FI-920-5 TIC Outer dimensions FI-920-TI: 58 x 58 x 131 mm New TIC version: 45 x 45 x 90 mm
Other wavelengths available upon request Discover the Q! 56 Qioptiq supplies cutting edge technology for all optical requirements of Industrial Manufacturing. Worldwide production capacities and state-of-the- art manufacturing plants guarantee an impressive portfolio of photonic products and solutions. Join us on a journey of discovery in our Crystal Technology brochure!
Photonics for Innovation
For technical information contact: Qioptiq www.qioptiq.com [email protected]