NSREC 2014 in Collaboration with the RADECS Association

NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE

NSREC 2014 In Collaboration with the RADECS Association

July 14 - 18, 2014 Marriott Rive Gauche Paris, France

Sponsored by: IEEE/NPSS Radiation Effects Committee

Supported by: 3D Plus • Aeroflex • Atmel • BAE Systems • Boeing • Honeywell • Intersil Corporation • Microsemi • Northrop Grumman •

Peregrine Semiconductor Corporation • Southwest Research Institute • www.nsrec.com Texas Instruments ConferenceConference FacilitiesFacilities

LES JARDINs / Parisian gardens BREAKFAST FOR HOTEL GUESTS LEVEL 3 Le Patio

SHORT COURSE LUNCH Le Patio and Le Jardin du Luxembourg

AEROBICS Le Jardin des Plantes

REGISTRATION Le Parc Montsouris A

LES RIVES DE SEINE / The Banks of the River Seine level 0

SHORT COURSE AND TECHNICAL SESSIONS La Seine A-B-C

INDUSTRIAL EXHIBITS La Seine Foyer, Pont des Arts A-B-C, and Pont de Sully A-B

INDUSTRIAL EXHIBIT LUNCHES (Tuesday, Wednesday and Thursday) Foyer Atrium

LES CLUBS DE JAZZ / JAZZ level -1

POSTERS and DATA WORKSHOP Level -1

LES QUARTIERS RIVE GAUCHE / the left bank areas Level 2

A/V PREVIEW La Sorbonne A-B Schedule

Monday Tuesday Wednesday Thursday Friday Time July 14 July 15 July 16 July 17 July 18

9:00 [9:00] Short Course [9:00] Conference Opening [9:00] Invited Talk – [9:00] Invited Talk – [9:00] Invited Talk – Introduction Frédéric Saigné La Seine A-B-C Paris, a Beacon for the Napoleon Bonaparte meets Space Flight Project La Seine (Level 0) World? Alexander the Great in the Complexity: Human Risk 9:10 [9:10] Part 1 – Comparative Olivier Chavaren French Campaign in Egypt Management Earth and Jovian Space La Seine A-B-C and Syria Michel Tognini 9:30 Environment Andrew Michael Chugg La Seine A-B-C Sébastien Bourdarie [9:40] Session A – La Seine A-B-C Basic Mechanisms of [9:55] [9:55] [9:55] Radiation Effects Session E – Session H – Session I – 10:00 Single Event Effects: Space and Terrestrial Dosimetry Transient Characterization Environments 10:30 [10:30] Break – La Seine, Foyer [10:30] Break – Foyer Atrium [10:30] Break – Foyer Atrium Atrium

[10:55] Part 2 – Dose [10:55] Session J – [11:00] Break – Foyer Atrium [11:00] (continued) 11:0 0 and Dose Rate Effects in Session H Single Event Effects: Micro-Electronics: Pushing [11:15] Break – Foyer Atrium Mechanisms and Modeling the Limits to Extreme [11:25] Session B – 11:30 Conditions Hardness Assurance Philippe Adell and Jérome Boch [11:40] Session F – Hardening by Design [11:55] Part 3 – SEE on 12:00 Advanced CMOS Bulk, FinFET and UTBB SOI Technologies 12:30 Philippe Roche and Gilles Gasiot [12:30] Lunch in Exhibits – [12:30] End of Conference Foyer Atrium

1:00 [1:00] Short Course Luncheon [1:00] Lunch in Exhibits – [1:00] Lunch in Exhibits – [1:00] Women in Engineering – Le Jardin du Luxembourg Foyer Atrium Foyer Atrium Invited Talk – Women in (Level 3) — and — Aerospace Today Luisella Giulicchi, La Seine A-B-C 1:30 [1:00] IEEE Young Professionals Lunch – St. Germain des Pres [1:45] Poster Session Room (Level 2) Jazz (Level -1) 2:00 [2:10] Session C – [2:10] Session G – Radiation Effects in Devices Photonic Devices and 2:30 [2:30] Part 4 – Facilities and Integrated Circuits Integrated Circuits and Methods for Radiation Testing 3:00 Françoise Bezerra and Vincent Pouget

3:30 [3:30] Radiation Effects Data Workshop Jazz (Level -1) 4:00 [4:00] Break – La Seine, Foyer [4:00] Break – Foyer Atrium Atrium

[4:25] Part 5 – Radiation [4:25] Session D – [4:30] End of Sessions 4:30 Effects, Calculation Single Event Effects: Devices Methods and Radiation Test and Integrated Circuits [4:30 to 5:45] Radiation Effects Challenges in Accelerator Committee Annual Open 5:00 Mixed Beam Environments Meeting – La Seine A-B-C Markus Brugger

5:30 [5:35] Wrap-up [5:45] End of Sessions [5:45 to 6:30] RADECS [5:50] Exam (for students Association Annual Open requesting CEU credit only) 6:00 [6:00 to 7:30] [6:00] End of Sessions Meeting – La Seine A-B-C Industrial Exhibits Reception – [6:20] End of Short Course La Seine Foyer 6:30

7:00 [7:00 to 12:00] Conference Social Seine Dinner Cruise 7:30

i Contents

Chairman’s Invitation ...... 1 Short Course Program ...... 2 Short Course ...... 3 Course Description ...... 3 Part 1 – Comparative Earth and Jovian Space Environment ...... 4 Part 2 – Dose and Dose Rate Effects in Micro-Electronics: Pushing the Limits to Extreme Conditions . 5 Part 3 – SEE on Advanced CMOS Bulk, FinFET and UTBB SOI Technologies ...... 6 Part 4 – Facilities and Methods for Radiation Testing ...... 7 Part 5 – Radiation Effects, Calculation Methods and Radiation Test Challenges in Accelerator Mixed Beam Environments ...... 8 Technical Program ...... 9 Technical Information ...... 9 Invited Speakers ...... 9 Late-News Papers ...... 9 Tuesday, July 15 ...... 10 Session A - Basic Mechanisms of Radiation Effects ...... 10 Session B - Hardness Assurance ...... 12 Session C - Radiation Effects in Devices and Integrated Circuits ...... 14 Session D - Single Event Effects: Devices and Integrated Circuits ...... 18 Wednesday, July 16 ...... 22 Invited Talk - Paris, a Beacon for the World? ...... 22 Session E - Single Event Effects: Transient Characterization ...... 23 Session F - Hardening by Design ...... 25 Session G - Photonic Devices and Integrated Circuits ...... 28 Radiation Effects Data Workshop ...... 30 Thursday, July 17 ...... 41 Invited Talk - Napoleon Bonaparte meets Alexander the Great in the French Campaign in Egypt and Syria ...... 41 Session H - Space and Terrestrial Environments ...... 42 Invited Talk - Women in Aerospace Today ...... 45 Poster Session ...... 45 Friday, July 18 ...... 47 Invited Talk - Space Flight Project Complexity: Human Risk Management ...... 47 Session I - Dosimetry ...... 47 Session J - Single Event Effects: Mechanisms and Modeling ...... 49 RESG NEWS ...... 53 Awards ...... 56 2013 NSREC Awards, 2013 RADECS Awards ...... 56 2014 Radiation Effects Award ...... 56 Conference Information ...... 57 Rooms for Side Meetings ...... 57 Included Meals ...... 57 Business Center ...... 57 Registration and Travel ...... 58 Conference Registration ...... 58 On-Site Registration Hours ...... 58 Conference Cancellation Policy ...... 58 Hotel Reservations and Information ...... 59 Airport and Transportation Information ...... 60 Driving/Parking ...... 61 Getting Around Town ...... 62 Industrial Exhibits ...... 63 2014 IEEE NSREC Technical Sessions and Short Course Registration Form ...... 65 2014 IEEE NSREC Activities Registration Form ...... 67 Social Program ...... 69 Industrial Exhibits Reception ...... 71 Seine Dinner Cruise - Conference Social ...... 71 Local Activities ...... 74. Weather and Clothing ...... 77 2014 Conference Committee ...... 78 Official Reviewers ...... 79 Radiation Effects Steering Group ...... 80 2015 Announcement and First Call for Papers ...... 81

ii Chairman’sSectionSection HeadingHeading Invitation

On behalf of the IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee and the 2014 Nuclear and Space Radiation Effects Conference (NSREC) Committee, it is my pleasure and privilege to invite you to attend the 51st annual IEEE NSREC to be held July 14-18, 2014, at the Marriott Rive Gauche Hotel in Paris, France. This year the conference is being held in collaboration with the RADECS Association. Without this collaboration it would not have been feasible to hold NSREC in Europe. This is the first time that NSREC crosses the Atlantic and the conference committee is honored to have been selected for this privilege. Our Committee has worked hard to offer an outstanding venue and program for this special edition.

The conference starts on Monday, July 14, with a one-day Short Course, organized by Frédéric Saigné (IES/University of Montpellier) with a theme of “Radiation Environments and Their Effects on Devices from Space to Ground.” This Short Course is an excellent learning opportunity for those who are new to the radiation effects community and need a quick introduction to the field, as well as those who want to stay abreast of the current issues in radiation effects. The course is divided into five lectures, three covering the radiation environment and its effects on devices, one dedicated to facilities and methods for radiation testing, and a final one describing the unique engineering challenge of the radiation hardness assurance of the Large Hadron Collider of CERN. In addition, a compendium of past short course notes will be distributed to Short Course attendees.

The technical program is from Tuesday, July 15, to Friday, July 18. The Technical Program Chair, Véronique Ferlet-Cavrois (ESA/ESTEC), and her technical committee have assembled an outstanding program of contributed papers describing the latest information on nuclear and space radiation effects on electronic and photonic materials, devices, circuits, and systems, and the engineering of radiation-tolerant devices and integrated circuits. Presentations will include ten oral sessions and a poster venue allowing direct discussions with authors. In addition, there will be a Radiation Effects Data Workshop consisting of poster presentations describing radiation effects data on electronic and photonic devices, and new simulation tools or test facilities. Véronique has also invited guest speakers to give talks of more general interest. “On behalf of the NSREC 2014 The Industrial Exhibit has been organized by Dominique de Saint-Roman committee, volunteers, and staff, (Consultant) and Odile Ronat (International Rectifier). The exhibit will permit I would like to thank all the one-on-one discussions between conference attendees and exhibitors on the latest authors, exhibitors, reviewers, developments in areas such as radiation-hardened and radiation-tolerant electron- and attendees who join in ics, engineering services, facilities, modeling, and equipment. This year, the Exhibit building together an exciting will open Tuesday morning and close Thursday afternoon after lunch. Light lunches technical and social international will be offered to registered attendees and exhibitors within the Exhibition area on event in our field. This conference Tuesday, Wednesday, and Thursday. On Tuesday evening, attendees and their com- is made by you and for you. I also panions are invited to a reception that showcases the Industrial Exhibit. welcome you and your family to stay for some extra time and Philippe Paillet (CEA), Local Arrangements Chair, has arranged an outstanding social have a good time in Paris and in program in Paris. The Conference Social on Wednesday evening will be the highlight of this program and will transport us on an unforgettable dinner cruise on the Seine France.” River. Visits to Versailles and Montmartre are highlights of an outstanding companions program. The Conference location right in the heart of Paris also allows easy Robert Ecoffet access to any city site through the urban metro network. NSREC 2014 General Chairman CNES The NSREC 2014 conference committee, not forgetting Publicity Chair, Teresa Farris (Aeroflex), Finance Co-Chairs Christian Chatry (TRAD) and Steven McClure (JPL), and Awards Chair Robert Reed (Vanderbilt) join me in welcoming you to the City of Lights.

We are looking forward to seeing you in Paris this July.

Visit us on the web at: Bienvenue en France et à Paris! www .nsrec .com

1 Short Course Program

RADIATION ENVIRONMENTS AND THEIR EFFECTS ON DEVICES FROM SPACE TO GROUND La Seine, the Banks of the River Seine, level 0 – Monday, July 14

8:15 AM Registration (Le Parc Montsouris A, Parisian Gardens, Level 3)

9:00 AM Short Course Introduction Frédéric Saigné, Université Montpellier 2

9:10 AM Part 1 — COMPARATIVE EARTH AND JOVIAN SPACE ENVIRONMENT Sébastien Bourdarie, ONERA

10:30 AM Break (La Seine, Foyer Atrium)

10:55 AM Part 2 — Dose and Dose Rate Effects in Micro-Electronics: Pushing the Limits to Extreme Conditions Philippe Adell, NASA - Jet Propulsion Laboratory Jérome Boch, Université Montpellier 2

11:55 AM Part 3 — SEE on advanced CMOS BULK, FinFET and UTBB SOI technologies Philippe Roche and Gilles Gasiot, STMicroelectronics

1:00 PM Short Course Luncheon (Le Jardin du Luxembourg, Parisian Gardens, Level 3)

2:30 PM Part 4 — FACILITIES AND METHODS FOR RADIATION TESTING Françoise Bezerra, CNES Vincent Pouget, IES - CNRS

4:00 PM Break (La Seine, Foyer Atrium)

4:25 PM Part 5 — RADIATION EFFECTS, CALCULATION METHODS AND RADIATION TEST CHALLENGES IN ACCELERATOR MIXED BEAM ENVIRONMENTS Markus Brugger, CERN

5:35 PM Wrap-Up

5:50 PM Exam (only for students requesting CEU credit)

6:20 PM End of Short Course

Each attendee will receive a CD-ROM archive of IEEE NSREC Short Course Notebooks (1980-2014); there will be no Short Course Printed Notebook in 2014.

2 Short Course

Course Description A one-day Short Course “Radiation Environments and Their Effects on Devices from Space to Ground” will be presented at the 2014 IEEE Nuclear and Space Radiation Effects Conference (NSREC). This short course will provide an introduction to space and accelerator environments, their effects on advanced devices and the way to test devices to radiations for those new to the field, as well as introducing advanced concepts and emerging issues for those experienced in the field. The 2014 Short Course will cover topics ranging from the harsh environments to effects on advanced devices and qualification procedures.

The Short Course is organized into five sessions starting with a session comparing the Earth and Jovian space environments. The second session presents an update of

the most recent research about dose rate effects in SiO2-based electronics. This session will include the basics of total ionizing dose effects and physical mechanisms. After a general overview of Single Event Effects (SEE) in electronic devices, the third session focuses on SEE on advanced CMOS Bulk, FinFET and UTBB SOI technologies while the fourth session focuses on facilities and methods for radiation testing. The last session addresses the specific case of radiation effects in accelerator mixed beam environments. The presenters for the 2014 short course are well-known experts in their respective areas. They will cover the background needed for newcomers to the radiation-effects field, as well as addressing current topics and advanced technologies.

The course is intended for designers, radiation engineers, component specialists, and other technical and management personnel who are involved in developing reliable systems designed to operate in radiation environments. This course provides a unique opportunity to NSREC attendees to benefit from the expertise of the instructors, as well as the in-depth coverage and application-oriented perspective provided by the short course format. In-depth notes will be provided at registration.

Continuing For those interested in Continuing Education Units (CEUs), there will be an open-book Education test at the end of the course. The course is valued at 0.6 CEUs and is endorsed by the Units (ceus) IEEE and the International Association for Continuing Education and Training (IACET).

Short course Dr. Frédéric Saigné graduated in Electronics at the Université of Montpellier 2. He Chairman spent a research period at Vanderbilt University and after appointment at the Reims Champagne Ardennes University, he is now Professor and Head of the Radiation Effects on Components (RADIAC) research team at the Université of Montpellier 2. His research activity has been directed to the study of dose effect in electronics, and reliability of semiconductor devices. He has authored or co-authored over 200 papers in referenced journals or conferences. In 2010, he created the first national research group on radiation effects on electronic devices at ground and atmospheric level in France. In collaboration with CNES and ESA, he has also founded, in 2013, the Van Allen Fundation dedicated to the development of universitary nanosatellites. He has been technical chair at RADECS 2005 in Cap d’Agde (France) and member of the RADECS steering committee from 2002 to 2007.

Frédéric Saigné Short Course Chairman

3 ShortSmallerSmaller Course HeadingHeading Monday

COMPARATIVE EARTH AND JOVIAN SPACE ENVIRONMENT Sébastien Bourdarie ONERA - The Aerospace Lab

The effects of the space radiation environment on spacecraft systems and instruments are significant design considerations for space missions. In order to meet these challenges and have reliable, cost-effective designs, the radiation environment must be understood and accurately modelled. The nature of the space environment varies Dr Sébastien Bourdarie has greatly between the Earth and Jupiter. The Jovian space environment is well known to be much more aggressive than the Earth one, however many similarities can be worked at the Space Environment found. In both space environment there are short-term variations (magnetic storms Department of ONERA since and substorms) while a clear evidence for long-term variations with the phase of 1993. He is currently involved in the solar cycle was only found for the Earth. In this paper we concentrate mainly on physical modelling of electron charged particle radiations. Descriptions of the radiation belts applicable to magne- radiation belts (Salammbo code) tized planets are reviewed. An overview of the traditional models is presented accom- for the Earth and Jupiter, as well panied by their application areas and limitations. as artificial radiation belts created by high-altitude nuclear weapons. Related to this activity, The Earth and Jovian Magnetosphere Structure he acquired a great experience in ■ Dimension and shape ■ processing and interpreting data Planetary magnetic field ■ Moons and their influence on the environment from particle detectors onboard different satellites. He has devel- Focus on the Radiation Belts oped a space radiation database ■ Description from various monitors. He is ■ Dynamics involved in data assimilation tool development, in particular Specification Models an ensemble Kalman filter for the Earth electron radiation belt. And Other Planets Then? He is also involved in spacecraft anomaly analysis. He is also in charge of supervision and exami- nation of PhD students. He is a teacher in space environment. Responsibilities and achievement: 2013-today: Member of the science committee board of the Solar-Heliosphere-Magnetosphere group from CNES; 2010-today: Member of the science committee board of the Sun-Earth system (PNST) division of CNRS; 2009-today: Member of the science committee board of the Physics division at ONERA; 2006-today: Member of the RADECS (RADiation Effects on Components and Systems) council board; 2004-2012: Chairman of the COSPAR PRBEM panel, 1997- 2009: Manager for DESP computer infrastructure.

4 Short Course Monday

Dose and Dose Rate Effects in Micro- Electronics: Pushing the Limits to Extreme Conditions Philippe Adell Jerome Boch NASA - Jet Propulsion Université Montpellier 2 Laboratory

In this course, we provide an update of the most recent research

about total ionizing dose (TID) and dose rate effects in SiO2-based Dr. Philippe Adell Dr. Jerome Boch devices. The objective is to cover what has been done in the past 5-7 started working at the received his MS years on the topic of low dose rate effects and high total dose level. NASA-Jet Propulsion (2000) from the Some of the subtopics will include: Laboratory, in Feb. Montpellier University 2007 after complet- and PhD (2003) in ing his MS (2003) and Microelectronics from Overview of TID Effects in Space PhD (2006) in Electrical the University of Reims ■ Dose (and dose-rate) levels in space: earth and beyond ■ Engineering at Champagne-Ardenne Total ionizing dose and damage processes in SiO2 Vanderbilt University. (France). Prior to Prior to moving to the accepting a research Dose and Dose Rate Effects in Microelectronics US, he had radiation and teaching position ■ Radiation hardness assurance (RHA) and test standards effects research experi- at the University of ■ TID effects in MOS devices ence with Alcatel Space Nice Sophia-Antipolis • Annealing and time dependent effects and the French space (France) in 2003, • Effects on advanced CMOS agency (CNES). He also he spent a year at ■ TID effects in bipolar devices graduated from the Vanderbilt University • Updates on ELDRS mechanism and modeling polytechnic institute (USA). In 2004, he • Hydrogen contamination of the University of joined the Radiation Montpellier (France), Effects on Components Pushing the Limits of Commercial Electronics to Extreme with a MS (1999) in (RADIAC) research Conditions (Temperature and Unconventional Dose Levels) material science and team as a senior lec- ■ High dose missions technologies. At NASA- turer at the University ■ Variable dose rate and very low dose rate JPL, he provided his of Montpellier and ■ Low temperature considerations to improve TID performance mission assurance he is now a full time ■ New challenges: Margin discussion, techniques to increase expertise to several JPL professor. His research device lifetime flight projects ( Juno, activity has been Mars Science Lander, directed to the study of Europa Clipper). He dose effect in electron- has been appointed ics, and reliability of by Charles Elachi, semiconductor devices. JPL director, to be the He has authored or JPL liaison for future co-authored over 90 international collabora- papers in referenced tion on interplanetary journals or conferences. CubeSats with CNES He has been technical and the Montpellier’s chair at RADECS 2010 Van Allen Consortium. in Langenfeld (Austria), Philippe has more than and he served as the 50 international pub- session chairman at lications in the field various RADECS of radiation effects in conferences. microelectronics and systems. He has served as session chair and short course instructor in previous NSREC and RADECS editions.

5 Short Course Monday

SEE on advanced CMOS BULK, FinFET and UTBB SOI technologies Philippe Roche and Gilles Gasiot STMicroelectronics

This short course is focused on Single-Event Effects (SEE) for the terrestrial environments, with implications for space, automotive and medical applications. Philippe Roche and Gilles Gasiot will first Dr. Philippe Roche Dr. Gilles Gasiot give an introduction to SEE by describing the different radiation received the M.S. received the M.S. environments, their interactions with process materials (Si, Boron) (1995) and Ph.D. (1999) (2000) and Ph.D. (2004) and impacts for consumer, safety and high reliability applications. in Semiconductor in microelectronics A first part will present the growing impact of radiation effects Physics from from the University with technology downscaling. The emphasis will be put on sub- Montpellier University, of Bordeaux, France. 40nm CMOS technologies and new challenges threatening circuit France. Since 1999, His thesis research resilience, such as terrestrial muons, thermal neutrons, multiple cell he has been with (in collaboration with upsets, radioactive contaminants and process variability. The sec- STMicroelectronics, STMicroelectronics ond part will highlight the radiation performances of state-of-the- Central R&D, Crolles, and French Atomic art Silicon-On-Insulator (SOI), Bulk and FinFET technologies, com- France, as Fellow Energy Commission bining experimental test results and radiation simulations down to and Team Manager at Bruyères-le-Chatel) the 14nm node. in charge of both focused on the reli- radiation, safety aspects ability of bulk and and sub-threshold SOI devices in the Introduction (<0.4V) design, natural radioactive ter- ■ Radiation environments intended to networking, restrial environment. ■ Intrinsic and extrinsic failure mechanisms space, automotive, In 1999, he joined ■ Impacts on consumer, safety and high reliability applications health care, defense, for a trainee period I-o-T. His primary the Radiation Effect Shift of Radiation Paradigm With Technology Downscaling research activities are Group at Vanderbilt ■ Muons SEE and TID, as well University, USA. Since ■ Thermals as Ultra-Low-Voltage 2004, he has been with ■ Ultra-low-alpha materials circuits for sub-130nm STMicroelectronics, ■ Multiple cell upsets CMOS down to FDSOI Crolles, France, and has ■ Variability 28/14nm. Philippe been actively working has been driving the on soft error rate char- Radiation Performances of Sub-40nm Bulk, SOI and FinFET development of the acterization (experi- ■ Parasitic bipolar new European Space mental and simulated) ■ Sensitive volume technology in 65nm for decananometric ■ 3D TCAD, GEANT4 and test results CMOS. He has been CMOS processes as ■ Fully-Depleted Ultra-Thin-Body-BOX (UTBB) SOI serving in conferences well as analog and ■ Partially-Depleted SOI since 1997, as reviewer, digital IPs/technol- ■ FinFET session chairman and ogy hardening for short course instructor, space and terrestrial such as at IRPS, environments. He has NSREC, IOLTS, DATE, coauthored more than RADECS, SOI and 60 articles and holds IEDM. Philippe has 4 patents in radiation coauthored 140+ papers hardening. Gilles is and filed 45+ patents also Senior member of in radiation-hardening the IEEE and will be and sub-threshold “Hardening by Design” circuits. session chairman for this year NSREC.

6 Short Course Monday

FACILITIES AND METHODS FOR RADIATION TESTING Françoise Bezerra Vincent Pouget CNES IES - CNRS

Françoise Bezerra, CNES, and Dr. Vincent Pouget, IES - CNRS, will present different aspects of device testing using either particle accelerators or radioactive sources. After a review of the different terms used in this field and explanation of the different available Françoise Bezerra Dr. Vincent Pouget is norms, they will present particle accelerators and sources which are received her degree a research scientist of routinely used for characterization. Most common pitfalls will then in electronic engineer- the French National be addressed and a regular test plan will be detailed. In the second ing from the French Center for Scientific part of the course they will present the principles and applications Civil Aviation National Research (CNRS) of the pulsed laser technique for SEE testing. After a brief review of School in 1991. She within the RADIAC the important experimental parameters of the laser technique, they joined CNES, the group of the IES lab will present different facilities and several case studies to illustrate French Space Agency, of the University of the current capabilities and limitations of the technique for SEE test- in 1992 as a quality Montpellier, France. ing of various semiconductor technologies. insurance engineer Before joining the in charge of micro- RADIAC group in Part 1: Particle Accelerators and Sources (F. BEZERRA) processors, ASICs and 2012, he worked for FPGAs. In 1999, she more than ten years Introduction, Terms and Examples of Satisfactory Results moved to the radiation at the IMS lab of the group where she still University of Bordeaux Test Methods coordinates the radia- where he has co- tion test campaigns, directed many research Particle Accelerators supports projects for projects dealing with ■ Heavy ions (high and average energies) the selection and use radiation effects, as ■ Protons (high and low energies) of electronic devices well as other reliability ■ Neutrons (mono energetic or energy spectrum) and manages R&D issues in semiconduc- studies. She is also tor devices. He has Sources Principal Investigator developed and has of the CARMEN/MEX been responsible for Typical Test Plan for TID, SEE and DDE instrument that stud- the ATLAS laser facility ies radiation effects for integrated circuits Most Common Pitfalls on electronic devices testing, one of the ■ Compatibility of test system with test chamber on board of JASON2 reference facilities for ■ Temperature management and monitoring and SAC-D satellites pulsed laser testing of ■ Sample preparation and Radiation Safety single-event effects. ■ … Officer for the CNES He received his PhD in Toulouse. Françoise Instrumentation and Part 2: Lasers (V. POUGET) has coauthored more Measurement from the than 60 papers in radia- University of Bordeaux Introduction, Motivation for SEE Laser Testing tion testing or in-flight in 2000. In 2008, he experiments and has cofounded the Pulscan Principles of Laser Testing also chaired sessions at company. Vincent has various RADECS con- coauthored over 80 ■ Single-photon and two-photon absorption ferences. Recently, two journal articles and con- ■ Review of main experimental parameters studies she has driven ference papers dealing were awarded as best with various applica- Facilities data workshop paper tions of laser testing. at the RADECS 2011 Methodology and 2012 conferences ■ Sample preparation respectively. ■ Typical test campaign ■ Common pitfalls and limitations ■ Mature applications and methods

7 Short Course Monday

RADIATION EFFECTS, CALCULATION METHODS AND RADIATION TEST CHALLENGES IN ACCELERATOR MIXED BEAM ENVIRONMENTS Markus Brugger CERN

Markus Brugger, CERN, will address the case of radiation effects in accelerator mixed beam environments. The radiation environment encountered at high-energy accelerators partly strongly differs from the environment relevant for space applications. Dr. Markus Brugger received The mixed field expected at modern accelerators is composed of charged and neutral his master degree in 1999 from hadrons, photons, electrons and muons, ranging from very low (thermal) energies up to the TeV range. Electronic components and systems exposed to a mixed radia- the Technical University, Graz, tion field will experience at once all three different types of radiation damages: Single Austria, finalizing his master Event Effects (SEEs) , damage from Total Ionizing Dose (TID) and displacement dam- studies already at CERN with age (DD), where in all cases, not only the particle type, but also the respective energy the level-1 Trigger for the CMS distribution are to be considered. This course contribution will discuss on modern experiment. He then received his accelerator environments, respective calculation methods and the impact on radiation degree in Theoretical Physics for tests and design. In addition, both the requirement, as well as the challenge of using activation modelling and bench- commercial components for accelerator applications will be highlighted and respec- marking of Monte-Carlo codes tive mitigation measures will be illustrated. working with the CERN radiation protection group. Building on his experience he then moved Radiation Environment and Effects Specific for High-Energy Accelerators ■ What do we mean by mixed particle/energy fields? to the CERN FLUKA team in the ■ Overview of CERN’s environments and main radiation effects of concern. context of the LHC machine and ■ What is similar/different to the Space environment? performing design studies for ■ What do accelerators have to worry about? LHC. In context with the latter, as ■ How does it compare to Ground/Low/High-altitude environments? from 2008 he got more and more involved in radiation damage to Monitoring Requirements and Solutions electronics issues and raised pos- ■ What are the respective needs at accelerators? sible respective constraints for the ■ The CERN RadMon system as a possible solution LHC machine, finally requiring significant mitigation measures Calculation Tools and Benchmarking Examples ■ to partly implemented during FLUKA: a quick and brief introduction ■ Application examples to radiation field calculations the past years. Since 2010 he is ■ Possible model studies and a few respective examples designated project leader of the ‘Radiation To Electronics’ (R2E) Applications, Large Systems and Dependency on COTS project for the CERN Accelerator ■ MTBF optimization as goal (not 100% reliability) and Technology Sector, with work ■ Associated challenges due to distributed complex systems spanning from shielding, radia- ■ Production challenges and time-lines and respective impact on radiation tests tion monitoring, construction of and procurement new test facilities and radiation tolerant developments of various Radiation Testing critical LHC systems. He teaches ■ Brief overview of test facilities used in the accelerator context ■ FLUKA in dedicated schools, Chosen test and qualification strategy ■ A new CERN radiation test facility: CHARM supervises regularly master and PhD students, as well as post- Challenging, though possible! What’s needed and what’s next? docs, has authored or co-authored more than 50 papers in various journals, conferences and work- shops and is also regular reviewer for several journals.

8 Technical Program

Technical The NSREC technical program will consist of contributed oral, poster papers, a data Information workshop, three invited presentations, and a Women in Engineering talk. The oral presentations will be 12 minutes in duration with an additional 3 minutes for ques- tions. The Technical Sessions and Chairpersons are: ■ Basic Mechanisms of Radiation Effects Chair: Hugh Barnaby, Arizona State University ■ Hardness Assurance Chair: Sana Rezgui, Linear Technology ■ Radiation Effects in Devices and Integrated Circuits Chair: Simone Gerardin, University of Padova ■ Single Event Effects: Devices and Integrated Circuits Chair: Daniel Loveless, Vanderbilt University ■ Single Event Effects: Transient Characterization “On behalf of the Technical Program Committee, I would like to invite you Chair: Daisuke Kobayashi, ISAS/JAXA to attend the 2014 NSREC Technical ■ Hardening By Design Sessions. For this Parisian edition of Chair: Gilles Gasiot, STMicroelectronics NSREC, held in collaboration with ■ Photonic Devices and Integrated Circuits the RADECS association, we have Chair: Scott Messenger, University of Maryland, Baltimore County assembled an exceptional high-quality ■ program. The larger than usual Space and Terrestrial Environments number of presentations will provide Chair: Eamonn Daly, ESA/ESTEC the latest advances in nuclear, space ■ Dosimetry and terrestrial radiation effects.” Chair: Arto Javanainen, University of Jyväskylä Véronique Ferlet-Cavrois, European ■ Single Event Effects: Mechanisms and Modeling Space Agency, ESA/ESTEC Chair: Nathaniel A. Dodds, Sandia National Laboratories Technical Program Chair

Poster session Those papers that can be presented more effectively in a visual format with group discussion will be displayed in the Poster Session on Tuesday through Friday on the Les Clubs de Jazz / Jazz, Level -1. The formal Poster Session will be held on Wednesday from 3:30 to 6:00 PM and the authors will be available at that time to discuss their work. The Poster Session is chaired by Jean-Luc Leray, CEA.

Radiation effects Workshop papers provide piece part radiation response data and radiation test facili- Data workshop ties technical information. The intent of the workshop is to provide data and facilities information to support design and radiation testing activities. Workshop papers can be viewed Tuesday through Friday on the Les Clubs de Jazz / Jazz, Level -1. Authors will be available on Thursday to discuss their work from 1:45 to 4:30 PM. A workshop record will be mailed to all registered conference attendees. The workshop chair is Farok Irom, Jet Propulsion Laboratory, and Stefan Metzger, Fraunhofer Institute.

Invited Speakers ■ Paris, a Beacon for the World? Olivier Chavaren, Licensed Guide of Paris and Its 150 Museums ■ Napoleon Bonaparte meets Alexander the Great in the French Campaign in Egypt and Syria Andrew Michael Chugg, MBDA ■ Space Flight Project Complexity: Human Risk Management Michel Tognini, Astronaut

Women in Engineering ■ Women in Aerospace Today Luisella Giulicchi, European Space Agency

Late-news Papers Late-news papers will be accepted and included in the Poster Session and the Radiation Effects Data Workshop. The deadline for submission is May 2, 2014. Detailed instructions for submitting a late-news summary are available on the NSREC web site at www.nsrec.com.

9 Technical Program Tuesday

La Seine A-B-C 9:00 AM OPENING REMARKS Robert Ecoffet, CNES, General Chairman

9:05 AM AWARDS PRESENTATION Marty Shaneyfelt, Sandia National Laboratories, Radiation Effects Steering Group Chairman

AWARDS PRESENTATION Philippe Calvel, Thales Alenia Space, President of the RADECS Association

9:35 AM TECHNICAL SESSION OPENING REMARKS Véronique Ferlet-Cavrois, ESA/ESTEC, Technical Program Chairman

Session A Basic Mechanisms of Radiation Effects 9:40 AM Session Introduction Chair: Hugh Barnaby, Arizona State University

A-1 Field Dependence of Charge Yield in Silicon Dioxide 9:45 AM Allan H. Johnston, J-K Associates; Randall T. Swimm, Man Tech; Dennis O. Thorbourn, Jet Propulsion Laboratory

New data show that charge yield at low temperature is much higher than theoretical predictions. Recombination at contacts is proposed to explain this, due to the large value of the Onsager radius at low temperature.

A-2 Exploring the Kinetics of Formation and Annealing of Single Particle 10:00 AM Displacement Damage in Microvolumes of Silicon Melanie Raine, Philippe Paillet, Olivier Duhamel, Marc Gaillardin, Nicolas Richard, CEA; Vincent Goiffon, Pierre Magnan, ISAE; Sylvain Girard, Universite de Saint-Etienne; Cedric Virmontois, CNES

Single Particle Displacement Damage events are recorded continuously and in real time under neutron irradiation, in arrays of silicon microvolumes. The kinetics of their formation and short-term annealing are analyzed.

A-3 Displacement Damage Effects in Quantum Well Solar Cells 10:15 AM Robert J. Walters, Sergey Maximenko, Naval Research Laboratory; Raymond Hoheisel, Matthew P. Lumb, George Washington University; Maria González, Sotera Defense Solutions; Scott R. Messenger, University of Maryland Baltimore County

Quantum-well solar cells have been irradiated with electrons to determine displacement damage effects on device performance. Diffusion length degradation and carrier removal are found to be the dominant damage mechanisms.

A-4 Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO2/HfO2 10:30 AM Devices Guoxing Duan, Daniel M. Fleetwood, Cher Xuan Zhang, En Xia Zhang, Ronald D. Schrimpf, Robert A. Reed, Michael M. Alles, Vanderbilt University; Gennadi Bersuker, SEMATECH; Chadwin D. Young, University of Texas at Dallas

The TID radiation response of SiGe-SiO2/HfO2 pMOS FinFETs is investigated under different device bias conditions. Negative bias irradiation leads to the worst-case deg-

radation due to increased hole trapping in the HfO2 layer.

10 Technical Program Tuesday

A-5 Radiation Effects from Proton Radiation in Carbon Nanotube Field 10:45 AM Effect Transistors Adam W. Bushmaker, Don Walker, Colin Mann, Alan R. Hopkins, The Aerospace Corporation; Moh R. Amer, Stephen B. Cronin, The University of Southern California

We measure electrical properties of carbon nanotube field effect transistors exposed to proton radiation, to study carbon nanoelectronics technology operating in the space environment. Single event effects, threshold voltage shifts, and transconductance degradations were observed.

Poster papers PA-1 Analysis of Radiation Effects in Silicon Using Kinetic Monte Carlo Methods Brian D. Hehr, Sandia National Laboratories

A kinetic Monte Carlo code has been developed and employed to investigate annealing in electron-irradiated silicon and also the recovery of base current in transistors bombarded with neutrons at the Los Alamos LANSCE facility.

PA-2 Structural and Material Changes in Chalcogenide Glasses under Ion Irradiation Tyler Nichol, Muhammad R Latif, Mahesh S. Ailavajhala, Dmitri A. Tenne, Boise State University; Hugh J. Barnaby, Yago Gonzalez-Velo, Michael N. Kozicki, Arizona State University; Maria Mitkova, Boise State University

We present results on structural and compositional changes in chalcogenide glasses under Ar+ ion irradiation as a function of dose and ion energies and suggest application for the formation of RCBM device array.

PA-3 Radiation-Induced Degradation of Transport in Nanoscale Transistor Ivan Sanchez Esqueda, USC Information Sciences Institute; Cory Cress, Navy Research Laboratory; Yu Cao, Yuchi Che, Chongwu Zhou, University of Southern California

Using the Landauer approach to carrier transport we describe the impact of radiation- induced defects on the transport properties of nanoscale transistors that operate in the quasi-ballistic regime.

PA-4 Total Ionizing Dose Effects on MoS2 Transistors Cher Xuan Zhang, A. K. M. Newaz, En Xia Zhang, Bin Wang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Kirill I. Bolotin, Sokrates T. Pantelides, Vanderbilt University

MoS2 transistors show positive I-V shifts during positive or negative bias irradiation. Density functional theory calculations suggest adsorbed O atoms on MoS2 from ozone decomposition during 10-keV x-ray irradiation are electron traps.

PA-5 Radiation Effects on Encapsulated Graphene-hBN Devices Cher Xuan Zhang, En Xia Zhang, Bin Wang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Sokrates T. Pantelides, Vanderbilt University; Aidan Rooney, K Khestanova, Roman Gorbachev, Sarah Haigh, University of Manchester

The 10-keV x-ray irradiation response of encapsulated graphene-hBN devices is evaluated. First-principles calculations identify the observed defects as B/N vacancies and CH interstitials.

11 Technical Program Tuesday

PA-6 Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation: Probing the Effects of Thermal and Current Injection Annealing Edward Bielejec, G. Vizkelethy, R. M. Fleming, D. K. Serkland, G. A. Patrizi, D. B. King, Sandia National Laboratories

We present a comparison of early-time reverse annealing in PnP and Npn HBTs. We find that while the PnPs demonstrate reverse annealing, for equivalent conditions (ion species, temperature) Npns do not have reverse annealing.

11:00 – 11:25 AM BREAK - Industrial Exhibits Foyer AtriuM

Session B Hardness Assurance 11:25 AM Session Introduction Chair: Sana Rezgui, Linear Technology

B-1 Power Mosfet Heavy Ion Single-Event Effect Failure Rate Prediction 11:30 AM Methods: A Comparison Study Jean-Marie Lauenstein, Kenneth A. LaBel, NASA/GSFC; Véronique Ferlet-Cavrois, ESA/ESTEC

SEB and SEGR failure rate prediction methods for power MOSFETs are compared and rates are calculated for two devices. Emphasis is made on test data requirements and the relative strengths and limitations of the methods.

B-2 Determination of Single-Event Effect Mitigation and Application 11:45 AM Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Point-of-Load Converters Leif Z. Scheick, Chistopher Stell, JPL/CIT

The characterization of destructive Single-Event Effects in enhancement GaN HEMTs is presented as related to the optimal application of and operating conditions for power management circuits. A mechanism for the phenomenon is also investigated.

B-3 Hardness Assurance in Advanced Semiconductor Packaging with 12:00 PM Krypton-85 Leak Testing Gary Lum, Lockheed Martin Space Systems Company; David Beutler, MannaTech Engineering, LLC; Dolores Walters, L3 Applied Technologies; William P. Ballard, Sandia National Laboratories

Significant gain degradation was observed from 85Kr leak testing of a bipolar discrete. The implications for hardness assurance are raised in advanced hermetic semiconductor packaging.

12 Technical Program Tuesday

B-4 Sample-to-Sample Variability and Bit Errors Induced by Total Dose in 12:15 PM Advanced NAND Flash Memories Marta Bagatin, Simone Gerardin, Federica Ferrarese, Alessandro Paccagnella, DEI - University of Padova; Véronique Ferlet-Cavrois, Alessandra Costantino, Michele Muschitiello, ESA/ESTEC; Angelo Visconti, Micron Technology; Pierre-Xiao Wang, 3D PLUS

The variability in the total dose response of 25nm single level cell NAND Flash memories from two different lots is studied. More than 1 Terabit of cells were irradiated with gamma rays and statistically analyzed.

B-5 Criticality of Low-Energy Protons in Single-Event Effects Testing of 12:30 PM Highly-Scaled Technologies Jonathan A. Pellish, Kenneth A. LaBel, NASA/GSFC; Paul W. Marshall, NASA Consultant; Kenneth P. Rodbell, Michael S. Gordon, IBM Thomas J. Watson Research Center; James R. Schwank, Sandia National Laboratories; Carlos M. Castaneda, University of California at Davis; Melanie D. Berg, Hak S. Kim, Anthony M. Phan, Christina M. Seidleck, AS&D, Inc.

We report low-energy proton and alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of understanding and using low-energy protons for SEE testing of highly-scaled technologies.

B-6 Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a 12:45 PM High-Energy Proton Beam Nathaniel A. Dodds, James R. Schwank, Marty R. Shaneyfelt, Paul E. Dodd, Barney L. Doyle, Sandia National Laboratories; Michael Trinczek, Ewart W. Blackmore, TRIUMF; Kenneth P. Rodbell, IBM; Robert A. Reed, Vanderbilt University; Jonathan A. Pellish, Kenneth A. LaBel, NASA/GSFC; Paul W. Marshall, NASA Consultant; Scot E. Swanson, Gyorgy Vizkelethy, Stuart Van Deusen, Sandia National Laboratories

When degrading a high-energy proton beam, a low-energy proton energy spectrum is produced whose shape matches that of all shielded space environments. This phenomenon dramatically simplifies rate prediction for proton-direct-ionization effects.

POSTER PAPERS PB-1 Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth- Generation SiGe HBTs Zachary E. Fleetwood, Adilson S. Cardoso, Nelson E. Lourenco, Ickhyun Song, John D. Cressler, Georgia Institute of Technology; Edward Wilcox, AS&D; Stanley D. Philips, Rajan Arora, Texas Instruments; Pauline Paki, Defense Threat Reduction Agency

The total ionizing dose response of fourth-generation SiGe HBT voltage reference is assessed at both low and high dose rates to evaluate ELDRS in a new SiGe BiCMOS technology.

PB-2 Study of a Thermal Annealing Approach for Very High Total Dose Environments Stephanie Dhombres, Alain Michez, Jerome Boch, Frédéric Saigné, Jean-Roch Vaille, Université Montpellier 2; Stephane Beauvivre, Daniel Kraehenbuehl, Systheia; Philippe C. Adell, Jet Propulsion Laboratory; Eric Lorfevre, Robert Ecoffet, Centre National d’Etudes Spatiales

A new thermal annealing approach applied to MOS and APS devices help extend their operating lifetime when exposed to very high dose levels. The impact of electric field during annealing is also investigated.

13 Technical Program Tuesday

PB-3 On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination Aymeric Privat, Antoine D. Touboul, Alain Michez, Jean-Roch Vaille, Frederic Wrobel, Frédéric Saigné, Université Montpellier 2; Sebastien Bourdarie, ONERA; Nathalie Chatry, TRAD; Géraldine Chaumont, STMicroelectronics; Eric Lorfèvre, Françoise Bezerra, CNES

Electrical characterizations are used to understand different failure mechanisms after heavy ion irradiation of power MOSFETs. This work addresses the limit of the post- irradiation gate stress relevance used for Power MOSFETs space qualification.

PB-4 SEL Cross Section Energy Dependence Impact on the High-Energy Accelerator Error Rate Rubén Garcia Alia, Salvatore Danzeca, CERN and Université Montpellier 2; Markus Brugger, Mekki Julien, Spiezia Giovanni, Slawosz Uznanski, CERN; Ewart Blackmore, Michael Trinczek, TRIUMF Laboratory; Véronique Ferlet-Cavrois, Christian Poivey, European Space Agency; Rémi Gaillard, Consultant; Ketil Roed, University of Oslo; Frédéric Saigné, Frederic Wrobel, Université Montpellier 2

Test data and implications of the proton SEL cross section increase in the 100- 480 MeV range on the estimated failure rate for energetic environments such as the CERN LHC or avionic are presented.

PB-5 A Calculation Method for Proton Direct Ionization Induced SEU Rate from Experimental Data: Application to a Commercial 45nm FPGA Nicolas Sukhaseum, Anne Samaras, TRAD; Françoise Bezerra, Robert Ecoffet, CNES

SEU proton direct ionization is experimentally observed in 90nm, 65nm and 45nm technologies. In this study, an estimation of the direct ionization SEU rate, based on experimental results, is proposed, for a 45nm CMOS FPGA.

PB-6 An Analysis of Heavy-Ion Single Event Effects for a Variety of Finite State-Machine Mitigation Strategies Melanie D. Berg, Hak S. Kim, Anthony M. Phan, Christina M. Seidleck, AS&D, Inc.; Kenneth A. LaBel, NASA/GSFC

We analyze single event upsets (SEUs) for a variety of finite state-machines (FSMs). The study examines the efficacy of FSM mitigation. The investigation includes single event transient and global-routing SEU response across frequency.

1:00 – 2:10 PM LUNCH - Industrial Exhibits Foyer Atrium

SESSION C Radiation Effects in Devices and Integrated Circuits 2:10 PM Session Introduction Chair: Simone Gerardin, University of Padova

C-1 A New Total Ionizing Dose Response Observed in PDSOI Transistors 2:15 PM Michael L. Alles, Dennis R. Ball, Ronald D. Schrimpf, Vanderbilt University; Harold L. Hughes, Naval Research Laboratory; Patrick J. McMarr, 3Sotera Defense Solutions

Measured results and 3D TCAD simulations demonstrate that PDSOI devices may exhibit a TID response more like FDSOI devices, attributable to regions of lighter body doping and trapped charge in the isolation regions.

14 Technical Program Tuesday

C-2 Geometry Dependence of Total-Dose Effects in Bulk FinFETs 2:30 PM Indranil Chatterjee, En Xia Zhang, Bharat L Bhuva, Robert A. Reed, Michael L. Alles, Dennis R. Ball, Ronald D. Schrimpf, Daniel M. Fleetwood, Vanderbilt University; Dimitri Linten, Eddy Simoen, Cor Claeys, Jerome Mitard, IMEC

The total ionizing dose response of bulk FinFETs is investigated for various geometries. Experiments show that transistors with thinner fin-width degrade more, while those with a smaller pitch and longer channel length degrade less.

C-3 Observed Effects of Ionizing Radiation on PMOS Negative Bias 2:45 PM Temperature Instability Kevin B. Geoghegan, The Defense MicroElectronics Activity and The Naval Postgraduate School; Jeffrey J. Siddiqui, The Defense MicroElectronics Activity; Todd R. Weatherford, The Naval Postgraduate School

Synergistic effects of ionizing radiation and negative bias temperature instability on pchannel MOSFETs were investigated. Data analysis presented herein reveals an unexpected relationship not purely additive in nature signifying the involvement of secondary physical mechanisms.

C-4 RF Performance of Proton-Irradiated AlGaN/GaN HEMTs 3:00 PM Jin Chen, En Xia Zhang, Cher Xuan Zhang, Michael W. McCurdy, Daniel M. Fleetwood, Ronald D. Schrimpf, Vanderbilt University; Stephen W. Kaun, Erin C. H. Kyle, James S. Speck, University of California, Santa Barbara

AlGaN/GaN HEMTs irradiated with 1.8-MeV protons show more degradation in RF current gain, fT, and fmax than DC transconductance. This results from fast bulk and surface traps, as well as impedance mismatch.

C-5 Mapping of Radiation-Induced Resistance Changes and Multiple 3:15 PM Conduction Channels in TaOx Memristors David R. Hughart, Andrew J. Lohn, Patrick R. Mickel, Paul E. Dodd, Marty R. Shaneyfelt, Edward Bielejec, Gyorgy Vizkelethy, Barney L. Doyle, Michael L. McLain, Matthew J. Marinella, Sandia National Laboratories

Radiation sensitive regions of TaOx memristors are mapped by measuring resistance during microbeam irradiation. Multiple sensitive areas exist on the perimeter, sug- gesting the sensitive volume is composed of multiple conducting filaments at the device edges.

C-6 TID and Displacement Damage Resilience of 1T1R HfO2/Hf Resistive 3:30 PM Memories Stephanie L. Weeden-Wright, William G. Bennett, Nicholas C. Hooten, En Xia Zhang, Mike W. McCurdy, Ronald D. Schrimpf, Robert A. Reed, Michael A. Alles, Robert A. Weller, Daniel M. Fleetwood, Vanderbilt University; Dimitri Linten, Malgorzata Jurczak, Andrea Fantini, IMEC

Irradiation of RRAM memory cells demonstrates resilience to ionizing dose and displacement damage, despite the presence of a non-hardened access transistor. Self- healing of radiation-induced damage in the resistive element is shown.

15 Technical Program Tuesday

C-7 Total Ionizing Dose Induced Timing Window Violations in CMOS 3:45 PM Microcontrollers Zachary J. Diggins, Nagabhushan Mahadevan, Daniel Herbison, Gabor Karsai, Eric Barth, Robert A. Reed, Ronald Schrimpf, Robert A. Weller, Michael Alles, Arthur Witulski, Vanderbilt University

Timing window violations are demonstrated to be the primary radiation-induced failure mode for a class of low power microcontrollers. A model for the degradation and hardening implications are presented.

Poster papers PC-1 Ionizing Radiation Effects on Non-Volatile Memory Properties of Programmable Metallization Cells Jennifer L. Taggart, Yago Gonzalez-Velo, Debayan Mahalanabis, Adnan Mahmud, Hugh J. Barnaby, Michael N. Kozicki, Keith E. Holbert, Arizona State University; Maria Mitkova, Kassandra Wolf, Boise State University; Erica Deionno, The Aerospace Corporation

Impact of ionizing radiation on the retention and endurance of PMC ReRAM cells is presented for the first time, as well as additional work on resistance switching. Endurance appears to be slightly reduced with TID.

PC-2 Total Dose Hardness of TiN/HfOx/TiN Resistive Random Access Memory Devices Katrina A. Morgan, Ruomeng Huang, William Redman-White, Kees De Groot, University of Southampton; Kenneth Potter, Chris Shaw, AWE

Resistive random access memory based on TiN/HfOx/TiN has been fabricated. Sweep and pulsed electrical characteristics were extracted before and after Co60 gamma irradiation. All devices were shown as radiation hard at 10Mrad(Si).

PC-3 The Susceptibility of TaOx-Based Memristive Devices to Continuous and Pulsed Ionizing Radiation Michael McLain, Tim Sheridan, Patrick Mickel, Don Hanson, Gary Chantler, David Hughart, Matt Marinella, Kyle McDonald, Sandia National Laboratories

The effects of continuous and pulsed ionizing radiation on TaOx memristors are investigated. The data indicates that it is possible for the devices to switch from a high-resistance state to a low-resistance state.

PC-4 Impact of Total Ionizing Dose on the Data Retention of a 65nm SONOS Based NOR Flash Helmut Puchner, Paul Ruths, Venkatraman Prabhakar, Igor Kouznetsov, Sam Geha, Cypress Semiconductor

The impact of total ionizing dose (TID) on the data retention behavior of a 65nm CMOS based 4Mbit SONOS NOR flash non-volatile memory is studied for the first time up to 500krad.

16 Technical Program Tuesday

PC-5 Effects of Proton and X-Ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics Sarah A. Francis, James C. Petrosky, John W. McClory, Evan Kemp, Air Force Institute of Technology; Cory D. Cress, Naval Research Laboratory

Charge pumping and Id-Vg hysteresis are used to investigate degradation and envi- ronmental effects in xray and proton-irradiated graphene transistors. Increases in hysteresis indicate radiation-induced oxide damage, while charge pumping indicates de-doping.

PC-6 Total Dose Effects in TDBC SOI NMOSFETs Jiexin Luo, Jing Chen, Zhan Chai, Shanghai Institute of Microsystem and Information Technology, China; Kai Lu, University of Chinese Academy of Sciences; En Xia Zhang, Daniel M. Fleetwood, Vanderbilt University; Xi Wang, Shanghai Institute of Microsystem and Information Technology

The TDBC SOI MOSFET utilizes a shallow source and a deep drain. As a result, this structure design can significantly reduce radiation induced back-channel leakage.

PC-7 Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies Marc Gaillardin, Philippe Paillet, Melanie Raine, Martial Martinez, CEA, DAM, DIF; Francois Andrieu, Olivier Faynot, CEA, LETI-Minatec

We propose a TID effect hardening strategy for nanoscaled Ultra-Thin BOX SOI technologies. Experiments performed on NMOS and PMOS transistors demonstrate that TID effects can be mitigated by applying a dynamic back-bias technique.

PC-8 Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling Stanislav Popelka, Pavel Hazdra, Rupendra Sharma, Vit Zahlava, Jan Vobecky, Czech Technical University in Prague

Effect of neutron irradiation on commercial SiC JFET is presented and analyzed. Introduced defects were identified and their effect on JFET characteristics established. 2D model of irradiated JFETs was developed, calibrated and used for analysis.

PC-9 Total Ionizing Dose Response of a 32 Nm RF Silicon-on-Insulator CMOS Process Tim D. Haeffner, T. Daniel Loveless, Jeff S. Kauppila, En Xia Zhang, Sri Jagannathan, Michael L. Alles, Lloyd W. Massengill, Vanderbilt University

Total ionizing dose parametric degradation of DC and RF parameters is demonstrated for a commercial 32nm SOI CMOS process. S-parameters and I-V characteristics are compared to corresponding 45nm SOI CMOS devices.

17 Technical Program Tuesday

PC-10 Impact of Neutron-Induced Displacement Damage on the ATREE Response in LM124 Operational Amplifier Fabien Roig, CEA and Université Montpellier 2; Laurent Dusseau, Aymeric Privat, Jean-Roch Vaillé, Jérôme Boch, Frédéric Saigné, Université Montpellier 2; Paul Ribeiro, Gérard Auriel, CEA; Nicolas J. H. Roche, Naval Research Laboratory and George Washington University; Ronan Marec, Philippe Calvel, Thales Alenia Space; Françoise Bezerra, Robert Ecoffet, Centre National d’Etudes Spatiales; Bruno Azais, Direction Générale de l’Armement

The synergistic effect between DD and ATREE in LM124 opamps from three different manufacturers is investigated for the first time. The ATREE responses impacted by fis- sion neutrons are modeled using a previously developed simulation tool.

PC -11 Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator Technology Farzad MD. Inanlou, Nelson Lourenco, Zachary Fleetwood, Ickhyun Song, Duane Howard, Adilson Cardoso, John D. Cressler, Georgia Institute of Technology; En Xia Zhang, Cher Xuan Zhang, Vanderbilt University; Pauline Paki-Amouzou, Defense Threat Reduction Agency

We investigate, for the first time, total ionizing dose (TID) effects on a Gaussian pulse generator implemented in IBM’s new 90-nm SiGe BiCMOS platform, intended for high-altitude and space-based imaging radars.

4:00 – 4:25 PM BREAK - Industrial Exhibits Foyer Atrium

Session D Single Event Effects: Devices and Integrated Circuits 4:25 PM Session Introduction Chair: Daniel Loveless, Vanderbilt University

D-1 Experimental Characterization and Simulation of Electron-Induced SEU 4:30 PM in 45nm CMOS Technology Anne Samaras, Nicolas Sukhaseum, Pierre Pourrouquet, Lionel Gouyet, Benjamin Vandevelde, Nathalie Chatry, TRAD; Robert Ecoffet, Françoise Bezerra, Eric Lorfevre, CNES

This study presents the SEU characterization of the embedded FPGA SRAM using electron irradiation. Technological cross section, Monte Carlo simulation and irradiation test results using primary electron beam are described.

D-2 Validation of the Variable-Depth Bragg-Peak Method for Single-Event 4:45 PM Latchup Testing Using Ion Beam Characterization Stephen P. Buchner, Jeffrey H. Warner, Dale P. McMorrow, NRL; Nicolas J-H Roche, George Washington University; Michael P. King, Isaac K. Samsel, Nicholas C. Hooten, Wilson G. Bennett, Robert A. Weller, Marcus H. Mendenhall, Robert A. Reed, Vanderbilt University; Charles C. Foster, Foster Consulting Services, LLC; Patrick M. O’Neill, Brandon D. Reddell, NASA/JSC; Kai V. Nguyen, Jacobs Engineering

The Variable Depth Bragg Peak method has been investigated for single event latchup testing by comparing latchup cross-sections for heavy ions at low and high energies and by pulse height analysis.

18 Technical Program Tuesday

D-3 State and Angular Dependence of Single-Events Upsets in an 5:00 PM Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors Michael L. Alles, Dennis R. Ball, Ronald D. Schrimpf, Lloyd W. Massengill, Vanderbilt University; Andrew T. Kelley, Nadim F. Haddad, John C. Rodgers, Jason F. Ross, Ernesto Chan, BAE Systems; Ashok Raman, Marek Turowski, CFDRC

A marked state dependence and reduced SEU cross section with increasing incident angle are attributable to the high aspect ratio of the deep trench capacitor employed for asymmetric hardening in a 90 nm CMOS SRAM.

D-4 The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT 5:15 PM PMOS SRAM with DRAM Capacitors Slawosz Uznanski, Rubén Garcia Alia, Markus Brugger, Julien Mekki, Benjamin Todd, Andrea Vilar-Villanueva, CERN; Ewart Blackmore, Michael Trinczek, TRIUMF; Remi Gaillard, Consultant

Proton/heavy-ion experimental data are analyzed for a 16Mbit TFT PMOS SRAM with DRAM capacitors. The increase of the SEU proton cross-section for the energies above 100MeV is studied by Monte-Carlo simulations.

D-5 A Method and Case Study on Identifying Physically Adjacent Multi-Cell 5:30 PM Upsets Using 28nm Interleaved and SECDED-Protected Arrays Michael Wirthlin, Brigham Young University; David Lee, Sandia National Laboratories; Gary Swift, Swift Engineering, Radiation Services, LLC; Heather Quinn, Los Alamos National Laboratory

As physical MCUs worsen with scaling, manufacturers use interleaving and ECC to keep logical MBUs from increasing. A case study using the first 28nm SEE dataset highlights this and that new test methodologies are required.

Poster papers PD-1 Radiation Performance of a Commercial Embedded ReRAM Dakai Chen, Kenneth LaBel, NASA/GSFC; Hak Kim, Anthony Phan, Edward Wilcox, AS&D, Inc.; Stephen Buchner, Naval Research Laboratory

We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in the status register.

PD-2 High and Low Energy Proton SEU in 32nm SOI SRAMs Ethan Cannon, Manuel Cabanas-Holmen, Anothony Amort, The Boeing Company

We present high and low energy proton single event upset data on a 32nm SOI SRAM. Low energy testing shows a strong direct upset peak, and strong dependence on rota- tion angle above the Bragg peak.

PD-3 Analysis of Hamming EDAC SRAMs Using Simplified Birthday Statistics Hans J. Tausch, JD Instruments; Helmut Puchner, Cypress Semiconductor

This paper develops a generalized equation relating random cell upsets to error rates in Hamming protected memory and shows how this equation can be used to better calculate upset cross-sections in heavy ion environments.

19 Technical Program Tuesday

PD-4 Efficient Dynamic Test Methods for COTS SRAMs under Heavy Ion Irradiation Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri, Arnaud Virazel, Laboratoire d’Informatique, de Robotique et de Microelectronique de Montpellier; Viyas Gupta, Laurent Dusseau, Frédéric Saigné, Institut d’Electronique du Sud; Helmut Puchner, Cypress Semiconductor; Alexandre Bosser, Arto Javanainen, Ari Virtanen, University of Jyväskylä; Frederic Wrobel, Institut d’Electronique du Sud and Institut Universitaire de France

We present novel methods for the dynamic mode radiation testing of SRAMs, based on different address accessing schemes: Fast Row, Fast Column and Pseudorandom. These methods are evaluated by heavy ion irradiation of two SRAMs.

PD-5 Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0 4. V SRAMs Ryo Harada, Soichi Hirokawa, Masanori Hashimoto, Osaka University

We present measurement results of alpha- and neutron-induced single event upsets and multiple cell upsets in 65 nm 0.4 V 6T SRAM on silicon on thin buried oxide (SOTB) and bulk devices.

PD-6 A Study of Temperature Related SRAM Alpha SER Sensitivity Ramya Ramarapu, Richard Wong, Cisco Systems; Brett Clark, Honeywell; Tian-Jing Shen, GSI Technology

The alpha SER sensitivity of SRAM devices was shown to increase when tin close to the die was heated. A mechanism based on alpha emitter diffusion at moderate temperatures is proposed.

PD-7 Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation Raoul Velazco, Wassim Mansour, Maud Baylac, Solenne Rey, Olivier Rosetto, Francesca Villa, Université Grenoble Alpes & CNRS; Juan A Clemente, Carlos Palomar, Francisco J. Franco, Universidad Complutense de Madrid; Guillaume Hubert, ONERA

A COTS SRAM was tested in a 14-MeV neutron source to determine if, as claimed, it is soft-error free and determine upper bounds for the cross-section. MUSCA SEP3 simulations complement these results.

PD-8 Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs Hiroaki Asai, Isamu Nashiyama, Kenji Sugimoto, Kensuke Shiba, Yuji Okazaki, Kenta Noguchi, Yasuo Sakaide, Tadaaki Morimura, HIREC

SEB tolerance of SiC power MOSFETs against terrestrial neutron is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of Si MOSFEET.

PD-9 Sensitivity Factor Analysis of Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures Pengwei Li, Feipeng Du, Lei Luo, Wenyan Wang, Qingkui Yu, Ming Tang, Jie Liu, China Academy of Space Technology

Heavy ion radiation experiments have been done to DC/DC converters with three topological structures. Single event function failure test results were analyzed. Factors causing the failure of DC/DC converters have been pointed out.

20 Technical Program Tuesday

PD-10 Duplication with Comparison for High Performance Computing Applications on Graphics Processing Units Daniel A. G. Oliveira, Paolo Rech, Philippe O. A. Navaux, Luigi Carro, UFRGS; Christopher Frost, STFC

GPUs parallelism is attractive for duplications with comparison hardening. Threads should be carefully duplicated to avoid undesired errors on shared or critical resources. Various duplication strategies are analyzed and tested on a realistic HPC algorithm.

PD -11 Reliability Evaluation of Embedded GPUs for Safety Critical Applications Davide Sabena, Yiru Guo, Luca Sterpone, Politecnico di Torino; Luigi Carro, Paolo Rech, UFRGS - Universidade Federal do Rio Grande do Sul

Embedded GPUs must be qualified as reliable to be employed in safety-critical applications. We analyze through neutron irradiation typical parallel algorithms for embedded GPUs and evaluate their reliability, focusing on caches and threads usage.

PD-12 Laser Testing for Diagnosing SEU and SET in Virtex-5 Fernanda Lima Kastensmidt, Lucas Tambara, UFRGS; Dmitry Bobrovsky, Alexander Pechenkin, Alexander Nikiforov, MEPHI

Laser testing is used to characterize SEE in Virtex5. SEU dependency to voltage supply, cross-section, threshold energy and SET diagnose are observed by combining readback, bitstream comparisons and designs to capture SETs with laser.

PD-13 On Delay Faults Affecting I/O Blocks of an SRAM-Based FPGA Due to Ionizing Radiations Fatima Zahra Tazi, Claude Thibeault, Simon Pichette, École de Technologie Supérieure; Yvon Savaria, Yves Audet, Polytechnique

Experimental means to characterize delay faults induced by bit flips and SEUs in I/O blocks of SRAM-based FPGAs are proposed. A delay fault of 6.2ns sensitized by an events chain is reported.

PD-14 Towards a Realistic SEU Effects Emulation on SRAM Based FPGAs Anis Souari, Claude Thibeault, École de Technologie Supérieure; Yves Blaquière, Université du Québec à Montréal; Raoul Velazco, Université Grenoble Alpes, CNRS, TIMA

A novel fault-injection approach reproducing results issued from radiation ground test while studying SEU effects on SRAM-based FPGAs is presented. Its effectiveness is validated by comparing the obtained results with the radiation ones.

5:45 PM End of Tuesday Sessions

21 Technical Program Wednesday

La Seine A, B and C Invited Talk Paris, a Beacon for the World? 9:00 – 9:55 am Olivier Chavaren, Licensed Guide for Paris and Its 150 Museums

With 28 million domestic and international visitors each year, Paris lures more tour- ists than any other city in the world. From its humble beginnings as the provincial town of Lutetia it has expanded into a world capital with global allure, fostered by its multi-thematic architecture, diverse museums, unique galleries, social cafés and bustling art scene.

Compared with other major global capitals, Paris remains densely populated with its 2,243,833 inhabitants living within an area of 66 square miles. Located on the River Seine, it benefits from an advantageous position on a seminal North-South exchange route. The intensity and the essence of its maturation relied heavily on the succession of defensive walls built from Antiquity until the 20th century interwar period.

Paris is the result of +2,000 years of history and bears the trace of each subsequent era. From the Middle Ages to the 19th C., royal heads and emperors constructed fortifications, royal residences, arches and fountains; they fostered the creation of churches and colleges and they spurred the creation of hospitals, markets, and schools. Francis I, Henry IV, Louis XIV, Napoléon Bonaparte and Napoléon III all played a central, critical role in adding their piece to the edifice, i.e. shaping Paris as a more bewitching city.

We’ll take our guests on a voyage of discovery of the city’s past, providing a chrono- logical account of how the events that unfolded in the capital intersected with the wider history of France. We’ll present the city key monuments and give you insights about what not to miss in the City of Light !

Olivier Chavaren, is a former instructor of French Language and Civilization, at George Mason University. He is now the President of I LOUVRE PARIS.com and President of COLORATOUR.com. Olivier is an officially Licensed National Tour Guide qualified for the Louvre, Orsay, Versailles and more. He loves passing on knowledge about Paris and beyond. He is a passionate tour guide who brings his love for arts, history, food and a good narrative to every tour. Olivier Chavaren is a dual citizen (French-US), born and raised in France and lived extensively across the pond ending up in DC.

Education: Ph.D , George Mason University, 2015 National Conference Speaker Diploma in English & German, Cum Laude, University of Paris, 2011 Master’s Degree, Magna Cum Laude, University of London, 2000

22 Technical Program Wednesday

Session E Single Event Effects: Transient Characterization 9:55 AM Session Introduction Chair: Daisuke Kobayashi, ISAS/JAXA

E-1 On the Transient Response of Best-of-Breed Complementary 10:00 AM (npn+pnp) SiGe HBT BiCMOS Technology Nelson E. Lourenco, Zachary E. Fleetwood, Partha S. Chakraborty, Troy D. England, Adilson S. Cardoso, Seungwoo Jung, Georgia Institute of Technology; Nicolas J-H. Roche, Naval Research Laboratory, and George Washington University; Ani Khachatrian, Naval Research Laboratory, and Sotera Defense; Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Naval Research Laboratory; Pauline Paki-Amouzou, Defense Threat Reduction Agency; Mehmet Kaynak, Bernd Tillack, Dieter Knoll, IHP Microelectronics; John D. Cressler, Georgia Institute of Technology

The SET response of a third-generation bulk C-SiGe (npn + pnp) BiCMOS platform is investigated for the first time. TCAD simulations are used to understand the experimental results and ascertain the intrinsic transient mechanisms.

E-2 Charge Collection and Enhancement Mechanisms in p-InGaSb 10:15 AM Heterojunction Field-Effect Transistors Probed with Pulsed Laser Excitation Jeffrey H. Warner, Dale McMorrow, Stephen Buchner, Cory Cress, James G. Champlain, J. Brad Boos, Brian R. Bennett, Naval Research Laboratory; Nicolas J.-H. Roche, The George Washington University

Laser-induced, charge-collection measurements for p-InGaSb/AlGaSb Heterojunction FETs are reported. These measurements demonstrate the presence of a charge enhancement process. Further insights are gained into the mechanism responsible for enhanced charge collection.

E-3 Comparison of Single Event Transients Generated by Short Pulsed 10:30 AM X-Rays, Lasers and Heavy Ions Stephen D. LaLumondiere, David M. Cardoza, Nathan P. Wells, Michael A. Tockstein, Rocky Koga, William T. Lotshaw, Kevin M. Gaab, Steven C. Moss, The Aerospace Corporation

We correlate Single Event Effect test results using pulsed x-rays, pulsed laser excitation, and heavy ions for simple photodiode structures. We also investigate shape of the signal transients observed for the different test modalities.

E-4 Quantification of Single-Event Harmonic Errors in Digitally Controlled 10:45 AM Ring Oscillators Yanran Paula Chen, T. Daniel Loveless, Pierre Maillard, Nelson J. Gaspard, Arthur F. Witulski, Bharat L. Bhuva, W. Timothy Holman, Lloyd W. Massengill, Vanderbilt University

Single-event harmonic errors have been observed in digitally controlled ring oscillators. Experimental, simulation, and modeling results are used to elucidate the funda- mental requirements for a sustained harmonic response.

E-5 Single Event Transients in 32 nm SOI Stacked Latches 11:00 AM Kenneth P. Rodbell, Kevin G. Stawiasz, Michael S. Gordon, Phil Oldiges, Keunwoo Kim, Conal E. Murray, John G. Massey, Larry Wissel, Henry H. K. Tang, IBM

Single event transient (SET) experimental data for Silicon-on- Insulator (SOI), 32 nm stacked latches are presented. Stacked latches are insensitive to SET pulse propagation through a floating point multiplier unit with low LET ions.

23 Technical Program Wednesday

Poster papers PE-1 New Techniques for SET Sensitivity and Propagation Measurement in Flash-Based FPGAs Adrian Evans, Dan Alexandrescu, IROC Technologies; Véronique Ferlet-Cavrois, ESA/ESTEC; Michael Nicolaidis, TIMA Laboratory

A calibrated circuit for on-chip measurement of Single Event Transients with tem- poral precision better than one gate delay is described. Heavy-ion test results for ProASIC3L FPGAs with simple and complex circuits are reported.

PE-2 Analyzing Single Event Effects on Microprocessor Cores Implemented on Flash-Based FPGAs Luca Sterpone, Boyang Du, Politecnico di Torino; Véronique Ferlet-Cavrois, David Merodio-Codinachs, Christian Poivey, ESA/ESTEC

Heavy-ion experiments are executed to characterize different mitigation techniques applied to a RISC microprocessor implemented on Flash-based FPGAs. Experimental results demonstrated that SET-aware placement achieves better SEE sensitivity versus traditional mitigation approaches.

PE-3 Single Event Transient Analyses Based on Experiments and Multi- Physics Modeling Applied to the Hardened ATMEL CMOS 180 and 90-Nm Libraries Guillaume Hubert, Laurent Artola, ONERA; Truyen David, Michel Briet, Chantha Heng, Yahya Lakys, Eric Leduc, ATMEL

This work describes test structures and modeling that have been applied to characterize SET pulse widths of hardened ATMEL CMOS libraries in 180 and 90nm technologies. Analyses correlate experiments and calculations based on MUSCA SEP3.

PE-4 Heavy Ion and Laser Induced Charge Collection in SiGe Bulk PMOSFETs En Xia Zhang, Isaak K. Samsel, Nicholas C. Hooten, William G Bennett, Erik D. Funkhouser, Michael W. McCurdy, Daniel M. Fleetwood, Robert A. Reed, Michael L. Alles, Ronald D. Schrimpf, Vanderbilt University; Dimtri Linten, Jerome Mitard, IMEC

Heavy-ion and two-photon-absorption laser data on SiGe pMOSFETs show that both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel.

PE-5 An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits Seungwoo Jung, Nelson E. Lourenco, Ickhyun Song, Michael A. Oakley, Troy D. England, Rajan Arora, Adilson Cardoso, John D. Cressler, Georgia Institute of Technology; Nicolas J.-H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Pauline Paki-Amouzou, Defense Threat Reduction Agency; Jeff A Babcock, Texas Instruments

We investigate single-event transients in C-SiGe (npn+pnp) HBT on SOI current mirror circuits.

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PE-6 A Model for Transient Radiation Effects in pHEMT Vadim V. Elesin, Galina N. Nazarova, George V. Chukov, Konstantin M. Amburkin, Alexander Y. Nikiforov, Dmitry V. Gromov, National Research Nuclear University

The experimental and modeling results of transient radiation effects in pseudo- morphic HEMT are presented. The physical model is proposed, which adequately describes dose rate effects in field effect transistors designated for microwave mono- lithic integrated circuits.

PE-7 The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier Fabien Roig, Paul Ribeiro, Gérard Auriel, CEA; Laurent Dusseau, Aymeric Privat, Jean‑Roch Vaillé, Jérôme Boch, Frédéric Saigné, Université Montpellier 2; Nicolas J.H. Roche, Naval Research Laboratory (NRL) and George Washington University (GWU); Ronan Marec, Philippe Calvel, Thales Alenia Space (TAS); Françoise Bezerra, Robert Ecoffet, Centre National d’Etudes Spatiales (CNES); Bruno Azais, Direction Générale de l’Armement (DGA)

The impact of TID on ASET shapes in high speed current feedback amplifier is investigated for different feedback transistors. TID and laser experiments are conducted, demonstrating that resistors and TID modify the size of transients.

11:15 – 11:40 AM BREAK - Industrial Exhibits Foyer Atrium

Session F Hardening By Design 11:40 AM Session Introduction Chair: Gilles Gasiot, STMicroelectronics

F-1 Single Event Transient and Total Dose Response of Precision Voltage 11:45 AM Reference Circuits Designed in 90 Nm SiGe BiCMOS Technology Adilson Silva Cardoso, Partha S. Chakraborty, Nelson E. Lourenco, David M. Fleischhauer, Zachary E. Fleetwood, Troy D. England, Georgia Institute of Technology; Laleh Najafizadeh, Rutgers University; Nicolas J. Roche, Jeffrey H. Warner, Dale McMorrow, Stephen P. Buchner, Naval Research Laboratory; En Xia Zhang, Cher Xuan Zhang, Robert A. Reed, Daniel M. Fleetwood, Vanderbilt University; Pauline Paki-Amouzou, Defense Threat Reduction Agency

Single event transient and total dose response of precision voltage reference circuits designed in a 4th generation, 90 nm SiGe BiCMOS technology are investigated, and new circuit-level radiation hardening design techniques are presented.

F-2 Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode 12:00 PM SiGe HBTs Ickhyun Song, Seungwoo Jung, Nelson E. Lourenco, Zachary E. Fleetwood, Tikurete B. Gebremariam, Farzad Inanlou, John D. Cressler, Georgia Institute of Technology; Nicolas J.H. Roche, Naval Research Laboratory and George Washington University; Ani Khachatrian, Naval Research Laboratory and Sotera Defense Solutions; Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Naval Research Laboratory; Pauline Paki-Amouzou, Defense Threat Reduction Agency

An SET-hardened RF LNA was designed using inverse-mode SiGe HBTs to demonstrate its potential in space-based RF applications. Two-photon absorption laser experiments and TCAD simulations are used to validate the approach.

25 Technical Program Wednesday

F-3 Mitigation of Total Dose Performance Degradation in an 8-18 GHz SiGe 12:15 PM Reconfigurable RF Receiver Duane C. Howard, Troy D. England, Adilson S. Cardoso, Prabir K. Saha, Subramaniam Shankar, Ryan M. Diestelhorst, Zachary E. Fleetwood, Nelson E. Lourenco, Georgia Institute of Technology; En Xia Zhang, Cher Xuan Zhang, Vanderbilt University; Pauline Paki‑Amouzou, Defense Threat Reduction Agency

The total dose response and efficacy of an on-chip reconfigurable 8-18 GHz SiGe RF receiver system for mitigating total dose RF performance loss are investigated for potential use in robust space-based applications.

F-4 A New Hybrid Non-Intrusive Error-Detection Technique Using Dual 12:30 PM Control-Flow Monitoring Luis Parra, Almudena Lindoso, Marta Portela-Garcia, Luis Entrena, University Carlos III; Matteo Sonza-Reorda, Boyang Du, Luca Sterpone, Politecnico di Torino

A hybrid technique that compares input and output instructions in a processor is proposed. No software modification is required to detect control-flow errors. Fault injection results with LEON3 show full control-flow error detection.

F-5 On the Structural Robustness Assessment of Wireless Communication 12:45 PM Systems for Intra-Satellite Applications Hipolito Guzman-Miranda, Javier Barrientos-Rojas, Patricio Lopez-Gonzalez, Vicente Baena, Miguel A. Aguirre, Universidad de Sevilla

The present work explores how to exploit the self-correcting features that transmitter- receiver systems have for correcting channel-induced errors, in order to design a radiation-tolerant wireless communications system for intra-satellite communication.

POSTER PAPERS PF-1 EReLA: a Low-Power Reliable Coarse-Grained Reconfigurable Architecture Processor and Its Irradiation Tests Jun Yao, Mitsutoshi Saito, Yasuhiko Nakashima, Nara Institute of Science and Technology; Shogo Okada, Kazutoshi Kobayashi, Kyoto Institute of Technology

A reconfigurable processor is proposed to selectively apply a programmable redun- dancy, either partial or full DMR, instead of device hardening. Power and reliability can be balanced. Stress radiation tests were performed to verify these concepts.

PF-2 Lightweight DMR for SEE Hardening in Low Power Embedded Systems Ronaldo R. Ferreira, Jean da Rolt, Gabriel L. Nazar, Alvaro F. Moreira, Luigi Carro, UFRGS - Universidade Federal do Rio Grande do Sul

We present a novel DMR hardening-by-design approach for embedded systems that does not require register file duplication, leading to error recovery with low power dissipation and considerably lower area overhead than standard DMR.

PF-3 A Single-Event-Tolerant Ring Oscillator Phase-Locked Loop in 130 Nm CMOS Yang You, Southern Methodist University; Deping Huang, Jinghong Chen, University of Arizona

This paper presents a phase-locked loop designed in 130 nm CMOS by using radiation-hardened-by-design techniques. The PLL achieves 4X less SET-induced voltage perturbation as well as a faster recovery.

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PF-4 Radiation Hardened Design and Analysis for Spin Transfer Torque Random Access Memory Djaafar Chabi, Weisheng Zhao, Jacques Olivier Klein, Claude Chappert, Universit Paris Sud

Conventional STT-MRAM is unsuitable for radhard applications due to CMOS peripheral circuits and its intrinsic stochastic switching. This paper analyzes the radiation impact on STT-MRAM and presents a radhard design for SEU mitigation.

PF-5 A Rad-Hard 1 Mbit S-Flash OTP Memory for Space Cristiano Calligaro, RedCat Devices; Julio Georgiou, University of Cyprus; Faustino Gomez Rodriguez, University of Santiago de Compostela; Valentino Liberali, University of Milano; Daniel Nahmad, Tower-Jazz; Alessandro Paccagnella, University of Padova; Alexander V. Prokofiev, Uppsala University; Ari Virtanen, University of Jyvaskyla

An OTP non-volatile flash memory was designed for space applications, in a standard 180 nm CMOS technology using RHBD techniques. Prototype characterization demonstrates immunity to latch-up and TID tolerance up to 125 krad.

PF-6 A MGy Radiation-Hardened Sensor Instrumentation SoC in 65nm CMOS Technology Jens Verbeeck, Ying Cao, Michiel Steyaert, Paul Leroux, KU Leuven; Marco Van Uffelen, Laura Mont Casellas, Carlo Damiani, Fusion for Energy; Richard Meek, Bernhard Haist, Oxford Technologies Ltd.

A radiation-hardened sensor instrumentation SoC is presented in this paper. The SoC is implemented in a standard 65nm CMOS technology, and achieves MGy-level TID radiation hardness through radiation-hardening-by-design.

PF-7 Evaluating the Robustness of TMR Schemes with Different Levels of Granularity in SRAM-Based FPGAs under Neutron-Induced Effects Lucas A. Tambara, Felipe Almeida, Paolo Rech, Fernanda L. Kastensmidt, Universidade Federal do Rio Grande do Sul; Giovanni Bruni, Universita degli Studi di Padova; Christopher Frost, Rutherford Appleton Laboratory; Heather Quinn, Los Alamos National Laboratory

Single Event Upsets caused by neutrons in several TMR schemes with different levels of granularity are evaluated in an SRAM-based FPGA. Results are shown in terms of Cross Section and Number of Accumulated Upsets.

PF-8 Soft Error Mitigation Using Transmission Gate with Varying Gate and Body Bias Selahattin Sayil, Mohammad A. Islam, Bo Sun, Lamar University

This work proposes a new transmission-gate based technique for filtering SE Transients. The gate voltages of individual pass transistors as well as body bias can be adjusted for filtering varying SE transient widths.

PF-9 An Innovative SEU Hardened CMOS Latch Tianwen Li, Haigang Yang, Gang Cai, Tian Zhi, Yue Li, Chinese Academy of Sciences

This paper describes an innovative SEU hardened CMOS latch. The cost comparison with other hardened latches and radiation test results are also given in this paper. With sufficient SEU immunity, it suits high reliability applications.

27 Technical Program Wednesday

PF-10 Power-Aware Mitigation of Combinational Logic Single Event Effects Nihaar N. Mahatme, Thiago Assis, Nelson J. Gaspard, T. Daniel Loveless, Bharat L. Bhuva, William H. Robinson, Lloyd W. Massengill, Vanderbilt University; Shi J. Wen, Richard Wong, CISCO Systems Inc.

A power-aware technique to minimize combinational logic soft error rate (SER) is proposed. Alpha particle logic SER of 20-nm circuits reduces by 7X and power consump- tion reduces by 41% compared to the baseline.

PF-11 Optimizing Well-Configuration for Minimizing Single Event Latchup Taiki Uemura, Kato Takashi, Ryo Tanabe, Hiroshi Iwata, Junichi Ariyoshi, Hideya Matsuyama, Fujitsu Semiconductor; Masanori Hashimoto, Osaka University

We investigate well configuration for minimizing single event latchup without design modification. Single event latchup and upset rates were evaluated through neutron irradiation test on SRAM with various well configurations.

1:00 – 2:10 PM LUNCH - Industrial Exhibits Foyer Atrium

Session G Photonic Devices and Integrated Circuits 2:10 PM Session Introduction Chair: Scott Messenger, University of Maryland, Baltimore County

G-1 Influence of Transfer Gate Design and Bias on the Radiation Hardness of 2:15 PM Pinned Photodiode CMOS Image Sensors Vincent Goiffon, Magali Estribeau, Paola Cervantes, Romain Molina, Pierre Magnan, ISAE, Universite de Toulouse

Total Ionizing Dose effects are investigated in Pinned Photodiode CMOS Image Sensors by comparing the radiation responses of several Transfer Gate designs. This comparison brings new insights into the degradation mechanisms.

G-2 Influence of O2 Loading Pre-Treatment on the Radiation Responses of 2:30 PM Pure and Fluorine Doped Silica-Based Optical Fibers Diego Di Francesca, Université Jean Monnet St Etienne and Università degli Studi di Palermo; Simonpietro Agnello, Franco Mario Gelardi, Università degli Studi di Palermo; Sylvain Girard, Université Jean Monnet St Etienne; Claude Marcandella, Philippe Paillet, CEA, DAM, DIF; Aziz Boukenter, Youcef Ouerdane, Université Jean Monnet St Etienne

We investigate the combined effects of high oxygen loading and high irradiation dose (up to 1 MGy) on the radiation response of fluorine-doped and pure silica core optical fibers in the UV-visible range.

28 Technical Program Wednesday

G-3 Proton Irradiation Response of Hole-Assisted Carbon Coated Erbium- 2:45 PM Doped Fiber Amplifiers Sylvain Girard, Diego Di Francesca, Aziz Boukenter, Youcef Ouerdane, Universite de Saint- Etienne; Arnaud Laurent, Emmanuel Pinsard, Thierry Robin, Benoit Cadier, iXFiber; Melanie Raine, Philippe Paillet, Marc Gaillardin, Oliver Duhamel, Claude Marcandella, CEA; Mathieu Boutillier, CNES

We investigated 63MeV proton irradiation response of EDFAs based on a new fiber structure that improves their hardness with a limited gain decrease of 0.6 dB from 27dB after equivalent irradiation dose of 100krad.

G-4 Development of a Temperature Distributed Monitoring System Based 3:00 PM on Raman Scattering in Harsh Environment Chiara Cangialosi, Youcef Ouerdane, Sylvan Girard, Aziz Boukenter, Universite Jean Monet de Saint Etienne and Universit degli studi di Palermo; Sylvie Delepine-Lesoille, Johanne Bertrand, National Radioactive Waste Management Agency; Claude Marcandella, Philippe Paillet, CEA, DAM, DIF; Marco Cannas, Universita degli Studi di Palermo

Hydrogen and gamma-rays effects on Raman Distributed Temperature Sensors were investigated to monitoring nuclear wastes deep geological repository. A hardening by system procedure is described to correct measurements from errors related to this environment.

G-5 Image Sensors DCNU Modeling with GEANT4 3:15 PM Christophe Inguimbert, Thierry Nuns, Didier Falguère, Dylan Furic, ONERA; Dominique Hervé, Mathieu Beaumel, SODERN

An original prediction method has been developed with the 3D Monte Carlo transport code GEANT4 to simulate Dark Current Non Uniformity (DCNU) of image sensors. Comparisons with experimental data are shown.

Poster papers PG-1 Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors Cedric Virmontois, Guy Rolland, Alain Bardoux, Catalin Codreanu, CNES; Arthur Toulemont, Airbus Defence and Space (formerly at CNES); Valérian Lalucaa, Vincent Goiffon, ISAE, Université de Toulouse

This paper focuses on the radiation-induced dose and single event effect in digital CMOS image sensors using pinned photodiode.

PG-2 Low Temperature Total Dose Irradiation of Transistors for Infrared Applications Thierry Nuns, Jean-Pierre David, Sabine Soonckindt, ONERA; Olivier Gilard, CNES; Franck Perrier, Samuel Ducret, SOFRADIR

Silicon transistor test vehicles used in Infrared detectors were exposed to total dose at cryogenic temperatures. We present the degradation of the leakage current and threshold voltage of different transistor topologies and different dose rates.

29 Technical Program Wednesday

PG-3 Effects of Gamma Radiation on Fiber Bragg Gratings by Variation of Grating Fabrication Parameters Jong Yeol Kim, Nam Ho Lee, Hyun Kyu Jung, Korea Atomic Energy Research Institute (KAERI)

We studied the effect of Co60 gamma-radiation on the FBGs by variation of grating fabrication parameters. The FBGs were fabricated in different process using the same commercial Ge-doped fiber.

PG-4 Transient Noise of MCT Detector Array due to High Energy Particles: Tests and Simulations Wousik Kim, Carl F. Bruce, Shawn S. Kang, Farokh Irom, Dennis O. Thorbourn, JPL

The transient noises on an MCT detector induced by 200 MeV protons and 0.6 - 1 MeV electrons are tested. The test results are compared with Monte Carlo simulations using MCNPX and Geant4.

PG-5 Displacement Damage in the Optocoupler Output Transistor: Contribution to a Screening Method Aminata M. J. F. Carvalho, Christian Binois, Laurent Toudret, Renaud Mangeret, Airbus Defence and Space; Véronique Ferlet-Cavrois, ESA/ESTEC

60 MeV proton induced displacement damage in the phototransistor of three different optocouplers is studied. A prior irradiation screening method of the phototransistor is proposed, based on the characterization of the phototransistor fall-time.

Radiation Effects DATA WORKSHOP 3:30 – 6:00 PM INTRODUCTION LES CLUBS DE JAZZ / JAZZ LEVEL -1

Chairs: Farok Irom, Jet Propulsion Lab, and Stefan Metzger, Fraunhofer Institute

W-1 Guide to the 2013 IEEE Radiation Effects Data Workshop Record David M. Hiemstra, MDA

The 2013 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.

30 Technical Program Wednesday

W-2 Single Event Upset Characterization of the Kintex-7 Field Programmable Gate Array Using Proton David M. Hiemstra, Valeri Kirischian, MDA

Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Kintex-7 FPGA are presented. Upset rates in the space radiation environment are estimated.

W-3 Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field- Programmable Gate Array under Heavy-Ion Irradiation David S. Lee, Sandia National Laboratories; Michael Wirthlin, Brigham Young University; Gary Swift, Swift Engineering and Radiation Services, LLC; Anthony Le, Boeing Corporation

The single-event response of the 28 nm Kintex-7 FPGA irradiated with heavy ions was measured. Results for single-event upset, including multi-cell upset, and for single- event latch-up are presented.

W-4 Total Ionizing Dose Characterization of 65 Nm Flash-Based FPGA Nadia Rezzak, Jih-Jong Wang, Chang-Kai Huang, Victor Nguyen, Gregory Bakker, Microsemi

New 65 nm flash-based field programmable gate array with system-on-chip capability is introduced. Device’s total ionizing dose effects are characterized. TID test results of CMOS Flash-based FPGAs are presented.

W-5 Single-Event Effects in Low-Cost, Low-Power Microprocessors Heather Quinn, Tom Fairbanks, Tripp Justin, Duran George, Lopez Beatrice, LANL

ARMs and Microcontrollers are low-cost, low-power microprocessors that are simpler than traditional microprocessors. In this abstract we present results from radiation testing several available ARMs and Microcontrollers.

W-6 SEE Results of a Next Generation LEON 3FT Microprocessor Craig Hafer, Brian Baranski, Gwen Butler, James Nagy, Steve Griffith, Anthony Jordan, Aeroflex Colorado Springs; Steven M. Guertin, NASA-JPL/Caltech

Special SEU test software is used to monitor the SEUs corrected by fault tolerant circuitry in the internal SRAM of the LEON 3FT processor. SEL immunity, SEU, and TID results are reviewed.

W-7 Radiation Effects Characterization of a High Density SSRAM Craig Hafer, Jon Mabra, Chris Mnich, Mike Leslie, Anthony Jordan, Aeroflex Colorado Springs

A high density 64/80/96-Mbit SSRAM has been designed/characterized for radiation effects. The device is SEL immune and has a SER less than 1x10-15 errors/bit-day. TID = 100 krad(Si).

W-8 SEE Test Results for P2020 and P5020 Freescale Processors Steven M. Guertin, Mehran Amrbar, Jet Propulsion Laboratory

Freescale processors are tested for heavy ion and proton SEE. Focus is on sensitivity of low-level targets such as SRAM. Effectiveness of specialty algorithms for error detect is studied.

31 Technical Program Wednesday

W-9 Neutron Induced Single Event Upset (SEU) Testing of Static Random Access Memory (SRAM) Devices Michael J. Tostanoski, Terrence F. Deaton, Roy E. Strayer, Jr., Rudolf Goldflam, Aeroflex RAD, Inc.; Travis Z. Fullem, Bechtel Marine Propulsion Corporation

Results of neutron induced single event upset (SEU) testing of three devices: the Galvantech GVT71128G36, the GSI GS816273CC, and the internal RAM in the TI SM32C6713BGDPA20EP DSP are described.

W-10 Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI-2 (France) Maud Baylac, Solenne Rey, Olivier Rossetto, Francesca Villa, LPSC Grenoble; Wassim Mansour, Pablo Ramos, Raoul Velazco, TIMA; Guillaume Hubert, ONERA

Newly available for integrated circuits irradiation, GENEPI-2 is an accelerator facility providing 3-MeV or 15-MeV neutrons, located in Grenoble (France). Radiation tests of an SRAM memory showed results compatible with other facilities.

W-11 Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 Nm Jean-Luc Autran, Daniela Munteanu, Sébastien Sauze, Aix-Marseille University; Gilles Gasiot, Philippe Roche, STMicroelectronics

We present a survey of real-time testing results accumulated from 2006 in altitude (ASTEP platform) and underground (Modane Laboratory). Radiation data concern three generations of SRAMs manufactured in CMOS 130, 65 and 40 nm.

W-12 Experimental Investigation of Single-Event Upset Induced by Low- Energy Proton on Commercial 65nm Bulk CMOS SRAM Gang Guo, Anlin He, Dongjun Shen, China Institute of Atomic Energy; Li Chen, University of Saskatchewan

Proton-induced SEU has been carried out on commercial 65 nm Bulk CMOS SRAM. The results show that cross-section caused by direct ionization is about 2 magnitude orders higher than that by nuclear reaction.

W-13 Charged Particle Induced Degradation of Trench Type N-Channel Power MOSFETs Rocky Koga, The Aerospace Corp.

Radiation sensitivity to protons and heavy ions is observed with trench n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced micro- dose effects are presented with comparisons to Co60 TID effects.

W-14 Recent Lateral and Trench Power MOSFET and Gallium Nitride HEMT Single Event Testing Results Leif Z. Scheick, JPL/CIT

The results of recent Single Event Effect (SEE) testing of newly available power MOSFETs and GaN HEMTs are presented.

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W-15 Single Event Effects in Power MOSFETs and IGBTs Due to Neutrons Damien Lambert, Francois Desnoyers, Didier Thouvenot, Nucletudes; Bruno Azais, DGA

Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide- semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).

W-16 Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs Alex Lidow, Johan Strydom, Efficient Power Conversion; Matt Rearwin, Max Zafrani, Microsemi Corporation

This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity when LET is 85 MeV/(mg/cm2).

W-17 Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs Richard T. Wilkins, Kazi Rashed, Ramesh Dwivedi, Brad Gersey, Prairie View A&M University; Akin Akturk, CoolCAD Electronics LLC

The first observation of neutron induced single event catastrophic failures in silicon carbide power MOSFETs is reported. These failures were observed for drain to source biases of greater than 800V for 1200V power MOSFETs.

W-18 Single Event Effects Characterization of the ADC12D1600CCMLS, 12 Bit, 3 2. GSPS Analog-to-Digital Converter with Static and Dynamic Inputs and Different Ion Energies Kirby Kruckmeyer, Thang Trinh, Texas Instruments

Texas Instruments’ 12 bit, gigasample ADC was put through heavy ion testing, using different beam energies and range penetrations and with dynamic and static inputs. The results of the different test conditions are compared.

W-19 ELDRS Characterization of Texas Instruments LM185, 1 2V. Precision Reference: Retrograde Behavior Demonstrates Why Taking Interim Test Points Is Important Kirby Kruckmeyer, Thang Trimh, Texas Instruments

The LM185 reference voltage degraded through total ionizing dose radiation, but began to recover at around 100 krad. The recovery curve was different for high and low dose rates and biased and unbiased test conditions.

W-20 Total Dose and Single Event Effects Testing of the Intersil ISL71090SEH and ISL71091SEH Precision Voltage References Nick W. van Vonno, Brian Williams, Dave Turner, Eric J. Thomson, Kiran Bernard, Intersil

We report the results of SEE and low and high dose rate total dose testing of the Intersil ISL71090SEH and ISL71091SEH hardened voltage references together with a discussion of electrical specifications and fabrication process.

33 Technical Program Wednesday

W-21 Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog Parts Nick W. van Vonno, Paul W. Traynham, Frank C. Ballou, Jim S. Gill, Intersil; Jon E. Shick, Honeywell

We summarize the results of 1MeV neutron displacement damage (DD) testing of several Intersil bipolar and BiCMOS analog and power management functions, including operational amplifiers, references, comparators, temperature sensors and point of load regulators.

W-22 Total Dose Radiation Effects on COTS Array CCDs at Low Dose Rate Zujun Wang, Northwest Institute of Nuclear Technology

Radiation experiments of CCDs at low dose rates of 0.01 and 0.03 rad(Si)/s are presented. Saturation output signal voltage, dark signal slope, and fixed pattern noise versus total dose are presented.

W-23 Radiation Performance of Interline CCD Arrays Dennis A. Thompson, Bryan C. Fodness, Paul P. Lee, Exelis Geospatial Systems

Commercially fabricated Interline CCDs were Total Ionizing Dose (TID) tested with gamma and proton radiation. Device performance degradations are presented and a method for synthesizing the on-orbit exposures, facilitating on-orbit performance predictions.

W-24 Design and Radiation Hardness of Next-Generation Solar UV Radiometers Samuel Gissot, Ali BenMoussa, Boris Giordanengo, Royal Observatory of Belgium

To build next generation space-based solar UV radiometers, we assess the degradation effects of proton irradiation on innovative wide bandgap photodetectors, UV filters, and calibration UV-LEDs.

W-25 Floating Gate P-MOS Radiation Sensor Charging Cycles Characterization Joan Cesari, Daniel Gomez, Alvaro Pineda, Integrated Circuits Malaga S.L.; Miquel Roca, Eugeni Isern, Eugeni Garcia, Universitat Illes Balears

A recharging cycles characterization of a floating Gate P-MOS radiation sensor is presented. The radiation sensor has been tested emulating the radiation environment in order to discharge the floating gate.

W-26 Radiation Effects in Thermal Image Sensors for Earth Observation Missions Luis Gomez Rojas, Tom Clatworthy, Mark Skipper, Mark Chang, Surrey Satellite Technology Ltd; Nick Nelms, Abelardo Perez Albinana, European Space Agency

Cobalt60 and heavy ion irradiations of the ULIS 03041 thermal infrared image sensor were performed to assess its reliability during ESA’s EarthCARE mission. Devices were tested up to 10krad(Si) and 40MeV LET.

W-27 TID and SEE Responses of Rad-Hardened Votage References Geraldine Chaumont, Benoit Cornanguer, STMicroelectronics; Florence Malou, CNES

We present Single Event Effects characterization and Total Ionizing Dose behaviour up to 300 krad(Si) on Rad-Hardened Voltage References.

34 Technical Program Wednesday

W-28 TID and SEE Characterization of Rad-Hardened 1 2GH. z PLL IP from New ST CMOS 65nm Space Technology Florence Malou, CNES; Gilles Gasiot, Remy Chevallier, Laurent Dugoujon, Philippe Roche, STMicroelectronics

We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology.

W-29 The Behavior of SEE Sensitivity at Various TID Levels Alexander A. Novikov, Alexander A. Pechenkin, Alexander I. Chumakov, NRNU MEPhI and Specialized Electronic Systems

SEU, SEL and SET sensitivity estimation results using laser technique in dependency of TID effects are presented and discussed.

W-30 A Total Dose Dataset for Vertical NPN Bipolar Transistors Dennis A. Adams, Herb A. Barnes, Cory E. Sherman, Norman P. Goldstein, Northrop Grumman Corporation; Craig Stodart, International Rectifier

Total Ionized Dose (TID) study was performed on vertical NPN bipolar transistors used in radiation hardened 10 V and 40 Volt BiCMOS processing technologies for 300 krad(Si) space applications.

W-31 Total Ionizing Dose Effects on Commercial Electronics for Cube Sats in Low Earth Orbits Richard Netzer, Keith Avery, Air Force Research Laboratory; William Kemp, LEIDOS; Alonzo Vera, Brian Zufelt, David Alexander, COSMIAC

Modest total dose in low earth orbit and short cube sat missions provide an opportunity for using commercial electronics. We present the results of high and low dose rate testing of candidate commercial microcircuits.

W-32 TID Response of a Hybrid AMR Vector Magnetometer Barry J. Whiteside, Patrick Brown, Trevor J. Beek, Tim M. Oddy, Tim S. Horbury, Chris M. Carr, Imperial College London

We present TID response up to 100 kRad(Si), of the three-axis vector magnetoresistive hybrid MAGIC, a low resource magnetoresistive sensor integrated with a H-bridge drive on a co-fired ceramic chip.

W-33 Effects of G-Ray Radiation on Magnetic Properties of NdFeB and SmCO Permanent Magnets for Space Applications Jose Luis Mesa, Ana Belen Fernandez, Carlos Hernando, María Teresa Álvarez, Marína Díaz Michelena, Instituto Nacional de Técnica Aeroespacial; Michael E McHenry, Carnegie Mellon University; Claudio Aroca, Universidad Politécnica de Madrid

NeFeB and SmCo permanent magnets have been irradiated up to three different total doses. Magnetic properties have been measured at different temperatures before and after irradiation, comparing its radiation resistance and suitability for space applications.

35 Technical Program Wednesday

W-34 Commercial Emitting Diodes Sensitivity to Protons Radiations Mathieu Boutillier, Olivier Gilard, Gianandrea Quadri, CNES; Sébastien Lhuillier, Lip Sun How, Adveotec; Stephan Hernandez, ESA

In this study, we report on 50MeV protons radiations damages on Europeans manufactured commercial light emitting diodes. The main objective is to assess the potenti- ality of such devices for space applications.

W-35 FEAST: a Radiation and Magnetic Field Tolerant Point-of-Load Buck DCDC Converter Federico Faccio, Georges Blanchot, Stefano Michelis, Isaac Troyano, Cristian Fuentes, Stefano Orlandi, CERN; Stefano Saggini, Udine University

CERN has developed a 10W POL buck DCDC converter for application in a radiation and magnetic field environment. Electrical characterisation, as well as radiation data for TID, displacement damage and SEEs are presented.

W-36 Radiation Tolerance Assessment of Commercial ZigBee Wireless Modules Rania I. Gomaa, Nuclear & Radiological Regulatory Authority; Ihab Adly, British University in Egypt; Ahmed Safwat, National center for radiation Research and Technology; Karam A. Sharsher, Azhar University; Hani F. Ragai, Ain Shams University

WSN deployment for monitoring nuclear environment has recently addressed as incremental and experimental networks. The work objective is to determine dose tolerance of commercially wireless Zigbee modules in nuclear embedded applications, with gamma irradiation fluxes.

W-37 Characterization and Analyses of RadHard-by-Design CMOS Open Drain Quad Comparators Ray Benson, Paul Resch, Aeroflex, Inc.; Randall Milanowski, Milanowski & Associates, Inc.

We present Total Ionizing Dose and Single Event Effects characterization and analyses of CMOS open drain comparators implemented using RHBD design and layout techniques. Results confirm high TID tolerance, SEL immunity, and favorable SET response.

W-38 Compendium of Ball Aerospace TID, DDD, and SEE Test Rests Richard D Horton, Timothy R Oldham, Ball Aerospace & Technology Center; Rocky Koga, Aerospace Corp.

We have conducted TID, DDD, and SEE tests on a variety of parts intended for application in different Ball Aerospace Systems. Results and discussion are presented.

W-39 Radiation Test Results on COTS and Non-COTS Electronic Devices for NASA Johnson Space Center Spaceflight Projects Kyson V. Nguyen, Patrick M. O’Neill, Brandon D. Reddell, Charles R. Bailey, Jacobs Technology - NASA JSC

This paper reports results of recent proton and heavy ion SEE testing on a variety of COTS and non-COTS electronic devices and assemblies tested for the International Space Station and Multi-Purpose Crew Vehicle.

36 Technical Program Wednesday

W-40 TID Test Results of Optical Materials and Photodiodes for SIS Instrument (Dreams Project) Maite Alvarez-Alonso, Carlos Hernando, Juan Jose Jimenez, Israel Martin, Francisco Javier Alvarez, David Escribano, INTA

The sensitivity to total dose of optical materials and custom photodiode candidates for EXOMARS 2016 is studied. The materials tested include Teflon, Delrin and five different Optical filter glasses from Schottt and Optics Balzers Jena.

W-41 Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial and Radiation Tolerant Operational Amplifiers Farokh Irom, Shri G. Agarwal, Mehran Amrbar, Jet Propulsion Laboratory

This compendium reports on single-event latchup and total ionizing dose results for a variety of operational amplifiers targeted for possible use in NASA spacecraft. It cov- ers devices tested over the last 15 years.

W-42 Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA Kenneth A. LaBel, Alvin J. Boutte, Dakai Chen, Michael J. Campola, Megan C. Casey, Jonathan A. Pellish, Jean-Marie Lauenstein, Raymond L. Ladbury, NASA/GSFC; Martha V. O’Bryan, Donna J. Cochran, Edward P. Wilcox, Robert A. Gigliuto, Melanie D. Berg, AS&D Inc.; Stephen P. Buchner, Dale McMorrow, Naval Research Laboratory; Robert R. Davies, Ball Aerospace & Technologies Corp.

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced displacement damage, and total ionizing dose.

W-43 Radiation Effects on Candidate Electronic Components for Particle Accelerator Electronic Systems Nikolaos Trikoupis, Juan Casas-Cubillos, Julien Mekki, CERN

Radiation results of candidate electronic components for particle accelerator electronic systems are presented. Their proper functionality and the drift of their parameters is analysed based on the total ionizing dose and displacement damage.

W-44 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics Pascal Oser, Giovanni Spiezia, Markus Brugger, Gilles Foucard, Eleftherios Fadakis, Roberto Losito, Alessandro Masi, Julien Mekki, Paul Peronnard, Gennaro Ruggiero, Raffaello Secondo, CERN - European Laboratory for Nuclear Research; Remi Gaillard, IEEE Senior Member, Consultant

Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analysed and are presented hereafter.

37 Technical Program Wednesday

W-45 SEE Testing Results for RF and Microwave ICs George V. Chukov, Vadim V. Elesin, Galina N. Nazarova, Alexander Y. Nikiforov, Dmitry V. Boychenko, Vitaly A. Telets, Alexander G. Kuznetsov, Konstantin M. Amburkin, National Research Nuclear University

A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.

W-46 Compendium of TID Comparative Results under X-Ray, Gamma and LINAC Irradiation Leonid N. Kessarinskiy, Dmitry V. Boychenko, Andrey G. Petrov, Pavel V. Nekrasov, Armen V. Sogoyan, National Research Nuclear University Moscow Engineering Physics Institute (NRNU MEPhI); Vasily S. Anashin, Pavel A. Chubunov, JSC Institute of Space Device Engineering

Compendium of TID comparative results under X-ray, Gamma and LINAC irradiation is presented. The new joint method of X-ray and gamma irradiation employment for TID investigations and experimental results are presented.

W-47 Laser Pulse Tests of Bipolar Junction Transistors (BJTs) for SET Analysis Andreas Schüttauf, Christian Daniel, Cristina Plettner, Astrium Space Transportation; Mariel Trigianese, Ferdinando Tonicello, Christian Poivey, ESA/ESTEC

In order to study the Single Event Transient (SET) sensitivity of discrete bipolar junction transistors, laser tests conducted at EADS Innovation Works in Sureness are presented and discussed in relation to PSPICE simulations.

W-48 Femtosecond Laser Simulation Facility for SEE IC Testing Andrey N. Egorov, Alexander I. Chumakov, Oleg B. Mavritskiy, Alexander A. Pechenkin, Dmitry V. Savchenkov, Vitaliy A. Telets, Andrey V. Yanenko, National Research Nuclear University, Moscow Engineering Physics Institute (NRNU MEPhI)

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.

W-49 Swift Heavy Ion Irradiation Capabilities at the National Superconducting Cyclotron Laboratory at Michigan State University Andreas Stolz, Daniela Leitner, Wolfgang Mittig, Mathias Steiner, NSCL / Michigan State University; Georg Bollen, Frederique Pellemoine, Reginald M. Ronningen, FRIB / Michigan State University

Irradiation capabilities at the National Superconducting Cyclotron Laboratory at Michigan State with ions from hydrogen to uranium with energies of up to 170 MeV/u for material science and single-event effect testing are presented.

38 Technical Program Wednesday

W-50 Roscosmos Test Facilities for Total Ionizing Dose Testing of Electronic Components Alexander S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov, Research Institute of Scientific Instruments (RISI); Vasily S. Anashin, Pavel A. Chubunov, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE)

Roscosmos test facilities for total ionizing dose testing of electronic components intended for space application are addressed. Examples of the application of these test facilities for different test methods are examined.

W-51 The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI Alexey S. Artamonov, Anton A. Sangalov, Alexander Y. Nikiforov, Vitaly A. Telets, Dmitry V. Boychenko, National Research Nuclear University MEPhI

The new gamma irradiation facility recently installed at the National Research Nuclear University MEPhI (Moscow, Russia) is presented

W-52 Mirage: a New Proton Facility for the Study of Direct Ionization in Sub-100nm Technologies Sophie Duzellier, Guillaume Hubert, Romain Rey, ONERA; Françoise Bezerra, CNES

The MIRAGE proton beam line was developed for investigating radiation effects in electronics. Standard beams are used for studying TiD/TnID effects whereas low current configuration is devoted to direct ionization effects in advanced technologies.

W-53 New Gamma-Radiation Facility for Device Testing in Spain Yolanda Morilla, Gema Muniz, Celestino I. Sanchez-Angulo, Javier Praena, Centro Nacional de Aceleradores (US-CSIC-JA); Manuel Dominguez, Pedro Martin, Eugenio Munoz, Joaquín Jimenez, Gonzalo Fernandez, ALTER Technology (TUV NORD)

Only few laboratories around the world are available for complete testing of devices to be used in space missions. RADLAB can achieve the standards, meet special requests, in the lead to complete component qualification.

W-54 First Successful SEE Measurements with Heavy Ions in Brazil Nilberto H. Medina, Nemitala Added, Vitor A.P. Aguiar, Eduardo L.A. Macchione, University of Sao Paulo; Marcilei A.G. Silveira, Renato Giacomini, Marco A.A. de Melo, Roberto B.B. Santos, Centro Universitario da FEI; Luis E. Seixas Jr., Centro de Tecnologia da Informacao Renato Archer

The first SEE measurements with heavy ions in Brazil is reported. The heavy ions were produced at the Sao Paulo Pelletron accelerator. Heavy ion beams were used to test commercial off-the-shelf transistors.

W-55 Intensity Upgrade to the TRIUMF 500 MeV Large-Area Neutron Beam Michael Trinczek, Ewart W. Blackmore, TRIUMF

The TRIUMF BL1B neutron/proton facility has been upgraded with improved shielding of the neutron production converter to provide higher neutron intensities. FLUKA calculations and beam measurements will be presented.

39 Technical Program Wednesday

W-56 SEE Test Results of Electronic Components Performed on Roscosmos Test Facilities Vasily S. Anashin, Alexander E. Kozyukov, Anatoly A. Kazyakin, Alexander S. Kuznetsov, Linaris R. Bakirov, Viacheslav S. Korolev, Kirill A. Artemyev, Konstantin Zh. Faradian, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE)

The paper presents SEE test results of electronic components foreseen to be used in the satellite equipment. They were provided to determine electronic components hardness level and also SETs studying and techniques to record them.

W-57 Analysis of Space Environment Measurement Carried Out by the Roscosmos Monitoring System Elements Vasily S. Anashin, Grigory A. Protopopov, Ilya V. Elushov, Pavel V. Binyukov, Alexey P. Polinkin, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE)

Total ionizing dose (TID) sensors data analysis is presented. TID sensor features are described. Dose rate abrupt increases analysis is carried out considering other flight data. The flight data is compared with space models.

W-58 Analysis of Geostationary and Polar Orbit Space Environment Data Processed by the Russian Federal Space Agency (Roscosmos) Monitoring System Vasily S. Anashin, Grigory A. Protopopov, Ilya V. Elushov, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE); Pavel A. Shatov, Sergey V. Tasenko, Fiodorov Institute of Applied Geophysics

Analysis of the flight data obtained with spectrometers placed on several spacecrafts are presented. Flight data are compared with trapped and solar particles space models including AX8, AX9, CRRESELE, JPL, Psychic, Rosenquist, Nymmik.

W-59 Simulation of Single Event Effects and Rate Prediction: CODES an ESA Tool Patricia Goncalves, Mário Pimenta, LIP; Ana Keating, LIP, and ESA; Sergio Coutinho, Eamonn Daly, CyberOffice; Ali Zadeh, ESA

CODES is an ESA GEANT4 based top level engineering tool, to predict Single Event Effects in EEE devices. It is based on Geant4 and its web-based interface is deployed in PHP.

W-60 A Case Study of in-Orbit SEU Rate Calculation Using the ForeCast Software Package Yi Sun, Qing-Kui Yu, Min Tang, Lei Luo, Ying Zhang, Ming Zhu, China Academy of Space Technology; Li-Sang Zheng, Chen Shen, Ding Gong, Cogenda Electronics Co. Ltd

A study of in-orbit SEU rate calculation of a FPGA , with newly developed software ForeCast. The rates calculated with the RPP/IRPP model and the composite sensitive volume method are compared against flight datas.

6:00 PM End of Wednesday Sessions

40 Technical Program Thursday

La Seine A, B and C Invited Talk Napoleon Bonaparte meets Alexander the Great in the French 9:00 – 9:55 am Campaign in Egypt and Syria Andrew Michael Chugg, MBDA

Napoleon’s invasion of Egypt in 1798 eventually developed into a military disaster with the destruction of the French fleet by Nelson whilst it lay at anchor in Aboukir Bay and the later surrender of the entire French Army of the Orient following the Battle of Alexandria in 1801. However, the lasting legacy of the expedition has not proved to be military exploits and adventurism but rather scholarly inquiries and investigations, including the discovery of important artifacts such as the Rosetta Stone and a sarcophagus said to have been used for the tomb of Alexander the Great. The research performed by the expedition’s scholars culminated in the publication of the magnificent multi-volume Description de l’Égypte under Napoleon’s patronage in 1809. This talk presents the astonishing story of Napoleon’s fifty intrepid “Savants” and what they saw, heard and deduced during the Napoleonic occupation of Egypt. But, it also relates the yet more curious story of another two centuries of further investigation, obfuscation and doubt, which has only recently begun to veer towards vindication. Only in the new millennium has it finally come to seem probable on the evidence that the magnificent ancient sarcophagus, now housed in the Egyptian hall of the British Museum, provides a unique physical connection between Alexander the Great, Julius Caesar and Napoleon Bonaparte.

Andrew Michael Chugg is the author of twenty papers on radiation effects published in IEEE Transactions on Nuclear Science since 1997 and in 2013 he was Technical Chair of the RADECS Conference held in Oxford. He is currently Senior Technical Expert in EMC & Radiation Physics at MBDA. However, he is also the author of a number of papers on Alexander the Great published in ancient history and classics journals, such as Greece & Rome and the Ancient History Bulletin. He has appeared as an Alexander expert on BBC Radio and in several National Geographic TV documen- taries. He has also written various books on the same subject including The Quest for the Tomb of Alexander the Great and Alexander’s Lovers and his research on the tomb in particular has been covered in many newspaper and magazine articles. He is currently nearing the completion of a project to reconstruct the highly influential account of Alexander’s reign by Cleitarchus, which was written in Alexandria in the second quarter of the third century BC, but which has been lost since the time of the Roman Empire.

41 Technical Program Thursday

Session H Space and Terrestrial Environments 9:55 AM Session Introduction Chair: Eamonn Daly, ESA/ESTEC

H-1 The Ganymede Radiation Environment Engineering Tool (GREET) for 10:00 AM JUICE Mission Environment Prediction Pete Truscott, Kallisto Consultancy Ltd; Fan Lei, RadMod Research Ltd; Daniel Heynderickx, DH Consultancy BVBA; Hugh Evans, Giovanni Santin, ESA/ESTEC & Rhea; Petteri Nieminen, ESA/ESTEC

The GREET model has been developed to calculate the influence of Ganymede and its magnetic field on Jupiter’s trapped electron environment. This paper describes the model, developed for ESA’s JUICE mission, and the initial results.

H-2 Improvements to Telstar Measurements of Artificial Radiation Belts 10:15 AM from the 1962 High Altitude Nuclear Tests Bernard Roth, Applied Research Associates, Inc.

US and USSR high altitude nuclear tests in 1962 produced artificial radiation belts. Numerical recalibration of Telstar satellite beta detector sensitivity indicates that trapped beta fluxes were a factor 3 lower than published estimates.

10:30 – 11:00 AM BREAK - Industrial Exhibits Foyer Atrium

H-3 Low Thrust Geostationary Transfer Orbit (LT-GTO) Radiation 11:0 0 AM Environment and Associated Solar Array Degradation Modelling and Ground Testing Scott R. Messenger, University of Maryland Baltimore County; Frankie Wong, Bao Hoang, Space Systems/Lora; Cory D. Cress, Robert J. Walters, Naval Research Laboratory; Craig A. Kluever, University of Missouri-Columbia

Low-thrust geostationary transfer orbits (LT-GTOs) offer significant cost advantages but subject the spacecraft to severe radiation environments. This paper describes the LT-GTO radiation environment with practical implications on solar array technologies.

H-4 How Long Can the Hubble Space Telescope Operate Reliably? 11:15 AM Michael A. Xapsos, David N. Haskins, Kenneth A. LaBel, NASA/GSFC; Craig A. Stauffer, AS&D, Inc.; Thomas Jordan, EMP Consultants; Christian Poivey, ESA/ESTEC

Total ionizing dose exposure of electronic parts in the Hubble Space Telescope is analyzed using 3-D ray trace and Monte Carlo simulations. Results are discussed along with other potential failure mechanisms for science operations.

H-5 FLUKA Calculation of the Neutron Albedo Encountered at Low Earth 11:30 AM Orbits Arnaud Claret, CEA Saclay; Markus Brugger, Alfredo Ferrari, CERN; Natacha Combier, APC; Philippe Laurent, CEA Saclay, and APC

This paper presents Monte-Carlo simulations based on Fluka code aiming to calculate the energetic and angular distribution of the neutron albedo encountered at low Earth orbits.

42 Technical Program Thursday

H-6 Angular Distribution of Protons Measured by the Energetic Particle 11:45 AM Telescope on PROBA-V Stanislav Borisov, Sylvie Benck, Mathias Cyamukungu, Université Catholique de Louvain; Paul O’Brien, Joseph Mazur, Aerospace Corporation; Petteri Nieminen, Hugh Evans, Eamonn Daly, European Space Agency

Angular distribution and contamination of proton spectra cause discrepancies between measurements and models. Analyzing Energetic Particle Telescope data (uncontaminated charged particle fluxes onboard PROBAV), we account for angular distribution and compare to AP8/AP9 models.

H-7 Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: 12:00 PM Altitude Vs . Underground Experiments, Modeling and Numerical Monte Carlo Simulation Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Aix-Marseille University; Frédéric Wrobel, Frédéric Saigné, Luigi Dilillo, Université Montpellier 2; Philippe Cocquerez, CNES

Multi-site characterization of terrestrial radiation using a CCD camera and numerical simulations demonstrate the CCD sensitivity to low energy protons and muons and the role of alpha-emitters in its response at sea level.

H-8 Real-Time Testing of 90nm COTS SRAMs at Concordia Station in 12:15 PM Antarctica Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Aida Todri, Arnaud Virazel, Laboratoire d’Informatique, de Robotique et de Microelectronique de Montpellier; Philippe Cocquerez, CNES; Jean-Luc Autran, Institut Materiaux Microelectronique Nanosciences de Provence; Antonio Litterio, ENEA - Programma Nazionale di Ricerche in Antartide; Frederic Wrobel, Institut d’Electronique du Sud and Institut Universitaire de France; Frédéric Saigné, Institut d’Electronique du Sud

We present the results of 90nm SRAMs real-time testing at the Concordia station in Antarctica. Besides the SER, the results show the occurrence of major events such as SELs and isotropic distribution of neutrons.

Poster papers PH-1 Space Radiation, Space Plasma, and Plume Plasma Design Considerations for All Electric GEO Satellite Missions Justin J. Likar, Alexander L. Bogorad, Kevin August, Robert E. Lombardi, Keith Kannenberg, Roman Herschitz, Lockheed Martin Space Systems

Geostationary satellites that utilize “All Electric” propulsion systems are subjected to comparatively complex space radiation, space plasma, and plume-generated plasma environments. Design and operational challenges are identified with design guidelines and proposed solutions presented.

PH-2 The Design of a Novel Surface Potential Monitor at GEO in China Chaoyang Zhou, Shengsheng Yang, Yi Wang, Xiaogang Qin, Kai Tian, Lanzhou Institute of Physics

A novel surface potential monitor has been developed for a satellite at GEO in China. New leakage current eliminating and zero clearing techniques were used to ensure the measurement of the surface potential.

43 Technical Program Thursday

PH-3 In Flight Measurements of Radiation Environment on Board the Argentinean Satellite SAC-D Daniel Boscher, Vincent Maget, Sebastien Bourdarie, Didier Lazaro, ONERA; Thomas Cayton, Los Alamos National Laboratory; Thomas Baldran, Philippe Bourdoux, EREMS; Eric Lorfevre, Guy Rolland, Robert Ecoffet, CNES

Measurements of the ICARE-NG/CARMEN-1 detector on board the low Earth orbit Argentinean satellite SAC-D are presented. Marge anisotropy is observed. A SVD method was used to reconstruct the proton spectrum.

PH-4 A New Proton Model for Low Altitude High Energy Specification Daniel Boscher, Angelica Sicard-Piet, Didier Lazaro, ONERA; Thomas Cayton, Los Alamos National Laboratory; Guy Rolland, CNES

A proton model was developed using measurements from different detectors on board different low altitude. It gives integrated proton flux fort he range 82-650MeV and for altitudes lower than 800km.

PH-5 Predictions and Comparisons of Electron-Induced Dose in the Context of Jupiter Missions Giovanni Santin, ESA/ESTEC and RHEA System BV; Laurent Desorgher, Paul Scherrer Institut; Sergio Ibarmia, INTA; Vladimir Ivanchenko, CERN; Pierre-François Peyrard, Jean- Charles Thomas, Pierre Pourrouquet, TRAD Tests & Radiation; Petteri Nieminen, Christian Erd, ESA/ESTEC

Comparison for TID levels for Jovian trapped electron environment by several transport tools show generally agreement within ~20%. Preliminary spectra comparisons also show close predictions. A problem area was identified for thicker Bremsstrahlung dominated shielding.

PH-6 e2-RAD: Results of the ESA Energetic Electrons Radiation Assessment Study Michael Wind, Jayasimha Bagalkote, Peter Beck, Marcin Latocha, Seibersdorf Laboratories GmbH; Dietmar Georg, Markus Stock, Medical University Vienna / AKH Wien; Petteri Nieminen, European Space Agency (ESA/ESTEC); Pete Truscott, University of Minnesota

Experiments and numerical simulations are done to study the performance of two- layered graded shielding in energetic electron fields using box and plane shielding geometries composed of aluminium, lead and tantalum.

PH-7 AVIDOS - a Tool at ESA’s Space Weather Portal for the Assessment of Space Radiation on-Board Aircraft Marcin Latocha, Peter Beck, Seibersdorf Laboratories; Alexi Glover, Juha-Pekka Luntama, ESA ESAC

The paper presents latest developments of AVIDOS - a tool for the assessment of radiation environment at aviation altitudes due to Galactic Cosmic Radiation. Currently, AVIDOS is being extended to include Space Weather effects.

44 Technical Program Thursday

PH-8 Neutron Shielding Effect of Stacked Servers and Its Impact on Soft Error Rate Takashi Kato, Taiki Uemura, Hideya Matsuyama, Fujitsu Semiconductor Ltd.; Ryoto Akano, Yukinobu Watanabe, Kyushu University

The shielding effect of stacked servers on terrestrial neutrons has been studied. We have revealed that a soft error rate is reduced through both the neutron flux attenua- tion and the distortion of the energy spectrum.

12:30 – 1:00 PM LUNCH - Industrial Exhibits Foyer Atrium

WOMEN IN ENGINEERING Women in Aerospace Today Invited Talk Luisella Giulicchi, European Space Agency 1:00 – 1:45 Pm La Seine A, B and C Aerospace is a wonderful profession for engineers and scientists. Working at the fore- front of technology for the benefit of humankind inspires individuals and captures the imagination of the wider public. Such appealing work should attract the most talented people regardless of their gender and diversity in the work environment should not be an issue.

Hypatia of Alexandria, who lived in the 4th century AD, is considered to be the first notable woman in mathematics, philosophy and astronomy and she was head of the Platonist school. Since then many other relevant examples have followed and made significant impacts on engineering and scientific fields. Despite this, women remain a minority in the aerospace domain today.

The aerospace sector needs to fully benefit from a larger pool of talented professionals, including men and women, to successfully compete globally. By building a more inclusive environment we can achieve more and more challenging goals and realize the most ambitious visions for the next decades.

The talk will provide an overview of the current status of gender diversity in the aerospace world, some historical information and recollections from personal experience.

Luisella Giulicchi biography: M.S. (with honors), Electronic Engineering, University of Florence, Italy. M.S., Space System Engineering, University of Delft, The Netherlands. Research Fellow, CERN (European Particle Physics Laboratory), Switzerland. Working at the European Space Agency (ESA) in the Netherlands since 1993. Initially responsible for R&D activities concerning GN&C technologies and use of GPS for aerospace applications. Then held several technical management positions of increasing responsibility in spacecraft project development: Bepi Colombo, the mission to Mercury; SMART-1, the first European Lunar mission; ESA/NASA LISA Pathfinder mission. Currently responsible for the spacecraft system engineering of the Copernicus Sentinel-1 mission. Copernicus is an initiative headed by the European Commission (EC) in partnership with the European Space Agency and the European Environment Agency (EEA) for global monitoring of environment and security.

Throughout her career Luisella Giulicchi actively participated in several professional organizations. Chair and member of the International Programme Committees for several space related conferences organized by ESA, American Institute of Aeronautics and Astronautics (AIAA), International Federation of Automatic Controls

45 Technical Program Thursday

(IFAC), American Astronautical Society (AAS), International Astronautical Federation (IAF) and Council of European Aerospace Societies (CEAS). Program Chair (2007) and Conference General Chair (2010) for the AIAA GN&C conference. Invited speaker, lec- turer and author of several publications; Editor and paper reviewer for scientific journals. AIAA Associate Fellow. Since 2013 member of the AIAA Board of Directors as Director for the International Region and member of the Board of Directors of Women in Aerospace (WIA) Europe as Treasurer and Director for Institutional Relations.

Poster SESSION 1:45 – 4:30 PM INTRODUCTION LES CLUBS DE JAZZ / JAZZ LEVEL -1

Chair: Jean-Luc Leray, CEA

4:30 PM End of Thursday Sessions

4:30 – 5:45 PM Radiation Effects Committee annual Open Meeting La Seine A, B and C

5:45 – 6:30 PM RADECS ASSOCIATION ANNUAL OPEN MEETING La Seine A, B and C

46 Technical Program Friday

La Seine A, B and C Invited Talk Space Flight Project Complexity: Human Risk Management 9:00 – 9:55 am Michel Tognini, Astronaut

Michel Tognini will talk about his two space missions, the space projects and the interaction between human and machine in complex situations.

Space programmes vary significantly in size, duration, and complexity, this neces- sitates continued research to develop innovative systems, solutions and products for the aerospace, human-machine interaction, robotic systems and so on. This is done at all levels, including operations and astronaut training, end-to-end planning, preparation, implementation and execution of spacecraft and facility operations. Space projects are highly risky; Michel Tognini will explain how risk management approaches are important and more specifically supporting risk perception and control, and a common vision for the entire organisation.

He will give an overview on the International Space Station, future missions in space, and astronaut training.

Michel Tognini biography: Michel Tognini is a former European CNES and ESA astronaut who served as Head of the European Astronaut Centre of the European Space Agency from Jan. 2005 to Nov. 2011. M. Tognini made his first spaceflight on July 1992 aboard Soyuz TM-15 to link with the Mir space station and flew again aboard the Space Shuttle Columbia STS-93 on July 1999. During this second mission his primary task was to assist in the deployment of the Chandra X-Ray Observatory, and to conduct a spacewalk if needed.

M. Tognini also attended the NASA Johnson Space Center and was initially assigned to the Operations Planning Branch of the Astronaut Office working technical issues on the International Space Station, and was subsequently supporting the Mobile Base System and the European Robotic Arm. M. Tognini has 4000 flight hours on 80 types of aircraft and has prepared about 200 papers, presentations and conferences about Human Spaceflights.

Session I Dosimetry 9:55 AM Session Introduction Chair: Arto Javanainen, University of Jyväskylä

I-1 A Dosimetry Methodology for Two-Photon Absorption Induced Single- 10:00 AM Event Effects Measurements Dale McMorrow, Jeffrey H. Warner, Stephen P. Buchner, Joseph S. Melinger, Naval Research Laboratory; Nicolas J-H. Roche, Naval Research Laboratory and George Washington University; Ani Khachatrian, Naval Research Laboratory and Sotera Defense Solutions

A pulsed-laser dosimetry approach for two-photon absorption single-event effects (TPA SEE) measurements is presented and demonstrated, permitting online monitoring and control of the operating point of the TPA SEE experimental beamline.

47 Technical Program Friday

I-2 A New RadMon Version for the LHC and Its Injection Lines 10:15 AM Giovanni Spiezia, Paul Peronnard, Alessandro Masi, Markus Brugger, Roberto Losito, Julien Mekki, Pascal Oser, CERN; Salvatore Danzeca, Rubén Garcia Alia, CERN and IES, Montpellier University; Remi Gaillard, IEEE senior member, Consultant; Laurent Dusseau, IES, Montpellier University

The design strategy and the sensors of the new RadMon, used for monitoring the radiation mixed field of the LHC accelerator, are described highlighting the results of the radiation robustness and the measurement accuracy.

Poster papers PI-1 Flexible Sensors Based on Radiation-Induced Diffusion of Silver in

Ge20Se80 Chalcogenide Glass Pradeep Dandamudi, Adnan Mahmud, Michael N. Kozicki, Yago Gonzalez-Velo, Hugh J. Barnaby, B. Roos, Terry L. Alford, Keith E. Holbert, Arizona State University; Mahesh Ailavajhala, Maria Mitkova, Boise State University

In this study, we extend our previous work on chalcogenide glass (ChG) based radiation sensors to demonstrate the feasibility of easily manufacturable flexible radiation sensors.

PI-2 Development Detection Technique with Alpha-Tracking and Comparison of Emissivity Hiroko Mori, Taiki Uemura, Hideya Matsuyama, Fujitsu Semiconductor Ltd.; Takashi Yamazaki, Takeshi Soeda, Fujitsu Laboratories Ltd.

We achieve accurate measurement of alpha emissivity with using alpha-tracking technique through decreasing effect of background. We measure various LSI materials with using this technique.

PI-3 Fully-Depleted Silicon-on-Insulator Devices for Use as Dosimeters in Radiation Cancer Therapy Yulong Li, Warren Porter, Ivan Roth, Chaitanya Kshirsagar, Yang Su, Margaret A. Reynolds, Bruce J. Gerbi, Steven J. Koester, University of Minnesota

The response of FDSOI MOSFETs to therapeutic X-rays is shown. The threshold voltage versus dose, substrate bias, energy, and angle are determined, and the potential of using FDSOI varactors for wireless dosimeters is analyzed.

PI-4 Characterization and Modelling of a Floating Gate Dosimeter with Gamma and Protons at Various Energies Salvatore Danzeca, Markus Brugger, Alessandro Masi, Giovanni Spiezia, CERN; Joan Cesari, Alvaro Pineda, IC Malaga; Laurent Dusseau, IES, Université Montpellier 2

A prototype of floating gate sensor FGDOS has been characterized with a 60Co source and with protons. A model of the sensor permits to measure the charge yield for different particle types and different energies.

48 Technical Program Friday

PI-5 Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHC Salvatore Danzeca, Giovanni Spiezia, Markus Brugger, Rubén Garcia Alia, Petra Mala, Alessandro Masi, Paul Peronnard, CERN; Laurent Dusseau, IES; Jaroslav Soltes, Ladislav Vierebl, UJV Rez

An 8 Mbit 90-nm memory is proposed as new high energy fluence sensor. The protons cross sections (30 MeV-480 MeV), thermal neutrons and the dependence on TID and the control circuitry is presented.

PI-6 CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs Sebastián Carbonetto, Mariano Garcia Inza, José Lipovetzky, Martín Carrá, Eduardo G. Redin, Lucas Sambuco Salomone, Adrián Faigón, Device Physics-Microelectronis Laboratory, School of Engineering, Universidad de Buenos Aires

We propose the use of CMOS differential circuits with inherent amplification to enhance the performance of MOSFETs dosimeters. A discrete-level prototype was tested as regards sensitivity, temperature compensation and noise at different opera- tion conditions.

PI-7 Ultra-Thin 3D Detectors: Charge Collection Characterisation and Application for Microdosimetry Linh T. Tran, Marco Petasecca, Michael L. F. Lerch, Anatoly B. Rosenfeld, University of Wollongong; Dale A. Prokopovich, Mark I. Reinhard, Australian Nuclear Science and Technology Organisation; Celeste Fleta, Giulio Pellegrini, Consuelo Guardiola, IMB-CNM (CSIC)

The charge collection in ultra-thin 3D detector has been studied using 5.5MeV 2+He and 20MeV 12C ion microbeam. A stronger effect of damage was observed after raster scanning with 20MeV 12C ions

PI-8 Characterisation of an Alternative Novel Diamond Based Microdosimeter Prototype Jeremy A. Davis, Susanna Guatelli, Marco Petasecca, Michael L. F. Lerch, Anatoly B. Rosenfeld, Centre for Medical Radiation Physics; Andrew D. C. Alves, Kumaravelu Ganesan, Steven Prawer, David Jamieson, University of Melbourne; Dale A. Prokopovich, Mark I. Reinhard, Australian Nuclear Science and Technology Organisation

A novel diamond microdosimeter prototype with sensitive volumes separated through laser milled trenches is characterized by means of Ion Beam Induced Charge collection (IBIC) measurements. Significant lateral confinement of charge collection is shown to occur.

10:30 – 10:55 AM BREAK Foyer Atrium

Session J Single Event Effects: Mechanisms and Modeling 10:55 AM Session Introduction Chair: Nathaniel A. Dodds, Sandia National Laboratories

49 Technical Program Friday

J-1 Upsets in Phase Change Memories due to High-LET Heavy Ions 11:0 0 AM Impinging at an Angle Simone Gerardin, Marta Bagatin, Alessandro Paccagnella, University of Padova; Angelo Visconti, Mauro Bonanomi, Silvia Beltrami, Micron Technology; Véroniqué Ferlet-Cavrois, ESA/ESTEC

We present the first evidence of single event upsets in 45-nm phase change memories caused by high-LET heavy ions at tilted angles. The upset cross section is compared with that of NOR Flash.

J-2 Dynamic Modeling of Radiation-Induced State Changes in HfO2/Hf 11:15 AM 1T1R RRAM William G. Bennett, Nicholas C. Hooten, Ronald D. Schrimpf, En Xia Zhang, Stephanie L. Weeden-Wright, Robert A. Reed, Michael A. Alles, Vanderbilt University; Dimitri Linten, Andrea Fantini, Malgorzata Malgorzata Jurczak, IMEC

An experimentally-verified dynamic model is presented for HfO2/Hf 1T1R RRAMs under heavy- ion irradiation for accurate prediction of single-event response in scaled technologies. Also, a hardening technique is presented that mitigates SEUs.

J-3 Simulation of Light-Matter Interaction and Two-Photon Absorption 11:30 AM Induced Charge Deposition by Ultrashort Optical Pulses in Silicon Dale McMorrow, Jeffrey H. Warner, Stephen P. Buchner, Joseph S. Melinger, Naval Research Laboratory; Joel M. Hales, Joseph W. Perry, Georgia Institute of Technology; Ani Khachatrian, Sotera Defense Solutions; William T. Lotshaw, The Aerospace Corporation; Vladislav Dubikovsky, 6Intrace Medical SA

Nonlinear beam propagation software is used to predict quantitatively the two- photon absorption-induced charge density profiles generated by focused femtosecond laser pulses under conditions that are experimentally relevant for single-event effects studies.

J-4 Effects of Well-Doping and Layout on Soft-Error Vulnerability for 11:45 AM Advanced Technology SRAMs Indranil Chatterjee, Bharat L. Bhuva, Robert A. Reed, Ronald D. Schrimpf, Vanderbilt University; Balaji Narasimham, J. K. Wang, Narayana Vedula, Brandon Bartz, Carl Monzel, Broadcom Corporation

The effects of well doping and layout on single-event upset cross-sections are demonstrated in 65, 40 and 28 nm triple-well SRAMs. The 40-nm parts exhibit upset-reversal phenomenon at high LETs.

J-5 Analysis of Single Event Upsets Induced by Low Energy Neutrons in a 12:00 PM 25 nm MOSFET Shin-ichiro Abe, Yukinobu Watanabe, Kyusyu University

We have analyzed SEUs induced by low energy neutrons in a 25nm MOSFET using PHYSERD simulation and clarified that the relative importance between elastic recoils and light ions depends on the size of interaction volume.

50 Technical Program Friday

J-6 Effects of Stopping Ions and LET Fluctuations on Soft Error Rate 12:15 PM Prediction Stephanie L. Weeden-Wright, Michael P. King, Nicholas C. Hooten, William G. Bennett, Brian D. Sierawski, Ron D. Schrimpf, Robert A. Weller, Robert A. Reed, Marcus H. Mendenhall, Daniel M. Fleetwood, Vanderbilt University; Rob C. Baumann, Texas Instruments Incorporated

We evaluate the effects of ion LET variability on soft error rates for 65 nm SRAMs in typical (GEO, ISS) radiation environments. Properly accounting for LET fluctuations leads to significantly different error rate predictions.

Poster papers PJ-1 The Impact of the Polarization Direction on Laser SEE Modeling in Complex ICs Petr K. Skorobogatov, Armen V. Sogoyan, Georgy G. Davydov, Andrey N. Egorov, Dmitry V. Savchenkov, Nuclear Research National University

Numerical and experimental evaluation of the laser radiation polarization influence on the CMOS 0.18-µm IC response is performed. The necessity of taking into account the polarization direction for SEE laser simulations is substantiated.

PJ-2 Verification of The Local Laser Irradiation Technique for SEE Testing Dmitry V. Savchenkov, National Research Nuclear University MEPhI; Alexander I. Chumakov, Specialized Electronic Systems; Alexander A. Pechenkin, Oleg B. Mavritskiy, Andrey N. Egorov, National Research Nuclear University MEPhI

Local laser irradiation technique permits determining the relation between laser energy and its equivalent linear energy transfer in ICs without ion testing. This work discusses the technique and investigates experimentally the assumptions it relies on.

PJ-3 Random-Walk Drift-Diffusion Charge-Collection Model for Reverse- Biased Junctions Embedded in Circuits Maximilien Glorieux, STMicroelectronics and Aix-Marseille University & CNRS, IM2NP Laboratory (UMR 6242); Jean-Luc Autran, Daniela Munteanu, Aix-Marseille University & CNRS, IM2NP Laboratory (UMR 6242); Sylvain Clerc, Gilles Gasiot, Philippe Roche, STMicroelectronics

A new computational model for charge transport based on parallelized random-walk drift-diffusion is proposed. The model has been successfully coupled with SPICE for circuit solving and feedback on the charge-collection process.

PJ-4 Circuit Level Modeling of Extra Combinational Delays in SRAM FPGAs Due to Transient Ionizing Radiation Mostafa Darvishi, Yves Audet, Ecole Polytechnique de Montreal; Yves Blaquiere, Universite du Quebec a Montreal; Claude Thibeault, Ecole de Technologie Superieure

This paper presents a novel circuit level model that explains and confirms the extra combinational delays in a SRAM-FPGA (Virtex-5) due to radiation, which matches the experimental results by proton irradiation at TRIUMF.

51 Technical Program Friday

PJ-5 Numerical Simulation of SEB Induced by Heavy Ions in Silicon Carbide Schottky Diode Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi, University of Cassino and Southern Lazio; Paolo Cova, Nicola Delmonte, Francesco Giuliani, University of Parma

A simulation study is presented aimed at describing phenomena involved in heavy ion induced SEB of SiC Schottky diode. It is demonstrated that the failure is caused by a strong local increase of the temperature.

PJ-6 Single-Event Latchup Modeling Based-on Coupled Physical and Electrical Transient Simulations in CMOS Technology Laurent Artola, Guillaume Hubert, Thomas Rousselin, ONERA

This paper presents a SEL modeling using coupled physical and transient electrical simulations. The method is validated by comparisons with experimental data. The SEL temperature dependence is investigated in a 0.18 µm CMOS inverter.

PJ-7 Single Event Transient Response of InAs Quantum-Well MOSFETs Kai Ni, En Xia Zhang, Michael W. McCurdy, Nicholas C. Hooten, William G. Bennett, Robert A. Reed, Ronald D. Schrimpf, Daniel M. Fleetwood, Michael L. Alles, Vanderbilt University; Taewoo W. Kim, SEMATECH; Jesus A. del Alamo, Massachusetts Institute of Technology

Heavy-ion induced current transients are investigated for InAs quantum-well MOSFETs. The gate oxide suppresses gate transients, and the transient peak current depends strongly on applied gate bias during exposure.

PJ-8 Investigation of Single Event Induced Soft Errors in 1T1R PMC Memory Debayan Mahalanabis, Hugh J. Barnaby, Michael N. Kozicki, Saba Rajabi, Arizona State University

Ion-strike induced single event in 1T1R Programmable Metallization cell (PMC) array is analyzed by constructing an equivalent circuit. Relationship between the critical switching condition of PMC and ion linear energy transfer (LET) is derived.

PJ-9 SEU Cross Section Calculation Based on Experimental Data of Another Kind of Particle Frederic Wrobel, Antoine D. Touboul, Vincent Pouget, Luigi Dilillo, Frédéric Saigné, Université Montpellier 2; Robert Ecoffet, Eric Lorfevre, Françoise Bezerra, Markus Brugger, CERN

We show how experimental SEU cross section can be used to characterize a device. We extract parameters that can be used for SEU cross section calculation for any other kind of particle.

PJ-10 Quantitative Study of Limiting Upset Cross-Section of DICE Latch Ding Gong, Chen Shen, Jun Zhao, Cogenda Pte. Ltd.; Xiaochen Zhang, Lin Liu, Suge Yue, Beijing Microelectronics Technology Institute

DICE latch SEU cross-section by heavy ion elastic scattering is investigated in this paper. The influential factor including ion species, energy, incident angle etc are discussed. Theoretical result matches experimental data well.

12:30 PM End of CONFERENCE

52 RESG NEWS

NSREC 2014 will be held in Paris, France, July 14 – 18, 2014 at the Marriott Rive Gauche. Robert Ecoffet and his 2014 conference committee have assembled a strong technical program and social events that will provide abundant opportunities for discussing radiation effects with old and new friends in the international radiation effects community.

Supporters of the NSREC include 3D Plus, Aeroflex, Atmel, BAE Systems, Boeing, Honeywell, Intersil Corporation, Microsemi, Northrop Grumman, Peregrine Semiconductor Corporation, Southwest Research Institute, and Texas Instruments. We thank our supporters for their significant and continuing commitments to the conference, and we welcome other organizations to consider becoming supporters of the IEEE NSREC.

NSREC 2015 will be held in Boston, Massachusettes, July 13 – 17, 2015 at the Marriott Copley Place. The conference chair is Michael Xapsos of NASA Goddard Space Flight Center. Robert Reed of Vanderbilt University will be chair of the 2016 NSREC, which Marty Shaneyfelt is planned for Portland, Oregon. Véronique Ferlet-Cavrois, ESA/ESTEC, has been Chairman named the 2017 NSREC chair.

As always, papers presented at the NSREC are eligible for publication in the December issue of the IEEE Transactions on Nuclear Science. It is particularly important for authors to upload their papers prior to the conference for consideration for publication in the December TNS Special Issue. Detailed instructions can be found at www.nsrec.com

Keep visiting our web site at www.nsrec.com for author information, paper submission details, exhibitor links, on-line registration, and the latest NSREC information.

Allan Johnston Executive Vice Chairman

IEEE FELLOWS A distinguished member of the international radiation effects community was elected to the grade of IEEE Fellow on January 1, 2014.

Robert Reed, Vanderbilt University

Robert’s citation reads, “For contributions to understanding the effects of single-event particle radiation on integrated circuits.”

53 RESG NEWS

Editors All papers accepted for oral or poster presentation to the technical program will Jim Schwank be eligible for publication in a special issue of the IEEE Transactions on Nuclear Vice-Chairman of Publications Science (December 2014), based on a separate submission of a complete paper. Each paper will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. All papers must be submitted on IEEE ScholarOne. Instructions for submitting papers can be found at the Conference web site www.nsrec.com. The deadline for submission of papers is the Friday before the Conference (July 11, 2014). Data Workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE Transactions on Nuclear Science. This process is managed by the Workshop chair.

The review process for papers submitted to the Transactions is managed by a team of editors. To provide consistent reviews of papers, this editorial team manages the review process for all radiation effects papers submitted to the Transactions throughout the year. The editorial team consists of a senior editor and six associate editors who are technically knowledgeable in one or more specializations and are experienced in the publication process. If you would like to serve as a reviewer for the December issue of the Transactions or for radiation effects papers submitted throughout the year, please contact one of the editors. The editors for the 2014 NSREC are:

Dan Fleetwood, Senior Editor Vanderbilt University Email: [email protected]

Dennis Brown, Associate Editor IEEE NPSS Email: [email protected]

Sylvain Girard, Associate Editor Université de Saint-Etienne Email: [email protected]

Pascale Gouker, Associate Editor MIT Lincoln Laboratory Email: [email protected]

Simone Gerardin, Associate Editor University of Padova Email: [email protected]

Heather Quinn, Associate Editor Los Alamos National Laboratory Email: [email protected]

Hugh Barnaby, Associate Editor Arizona State University Email: [email protected]

54 RESG NEWS

ARE YOU A Now is the time to join the Institute of Electrical and Electronics Engineers (IEEE) and MEMBER OF IEEE? the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you’ll become a member of the largest professional engineering society in the world. About 60% of NSREC attendees are IEEE members. Full membership in IEEE costs less than $200. IEEE members receive access to a broad range of benefits, including a terrific insurance program, on-line access to IEEE publications, and reduced rates at all IEEE sponsored conferences, including, of course, the IEEE NSREC and Short Course!

NPSS membership is $35. NPSS members receive a free subscription to NPSS News, and free on-line electronic access via IEEE Xplore to the IEEE Transactions on Nuclear Science (TNS) and the NSREC Data Workshop Record. Now members can search and view digital copies of all IEEE TNS papers on-line all the way back to the first IEEE NSREC in 1964. NPSS members get to vote in our NSREC elections, held at the annual open meeting on Thursday of the conference. What are you waiting for? Apply for membership at ewh.ieee.org/soc/nps/join-npss.html or visit the IEEE registration desk at the conference.

NSREC PUBLICATIONS NSREC has three publications each year:

■ IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at the NSREC Conference.

■ Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semiconductor components.

■ NSREC Short Course Notebook. Published each July, this notebook contains tutorial presentations on the basic physics of radiation effects in circuits and systems. It includes the instructors’ notes and text, and is given to participants of the annual Radiation Effects Short Course.

A complimentary copy of the 2014 IEEE Radiation Effects Data Workshop Record and the December special NSREC issue of the IEEE Transactions on Nuclear Science will be mailed to each NSREC technical session attendee. A CD of the NSREC Short Course Notebooks (1980 - 2014) will be given to short course attendees in Paris instead of a printed notebook.

Radiation Effects You are invited to attend the IEEE Radiation Effects Committee’s Annual Open Committee Meeting on Thursday, July 17, from 4:30 - 5:45 PM in room La Seine ABC, on The ANNUAL Open Banks of the River Seine, Level 0. All conference attendees and spouses are encour- Meeting aged to attend. We will discuss the 2014 conference and future IEEE Nuclear and Space Radiation Effects Conferences. There will be an election for the Junior Member- at-Large on the Radiation Effects Steering Group and an election for four members for the 2015 nominating committee. Nominations will be taken from the floor. All IEEE NPSS members present are eligible to vote. Refreshments will be provided.

RADECS Association Immediately following the conclusion of the IEEE Radiation Effects Committee’s ANNUAL Open Annual Open Meeting, the RADECS Association will hold their Annual Opening Meeting Meeting in the same location, 5:45 - 6:30 PM. Everyone is invited to stay for the open portion of this meeting to learn about future RADECS conferences.

55 Awards

2013 NSREC Electron-Induced Single-Event Upsets in Static Random Outstanding Access Memory Conference Paper M. King, R. Reed, R. Weller, M. Mendenhall, R. Schrimpf, B. Sierawski, A. Sternberg, Award B. Narasimham, J. Wang, E. Pitta, B. Bartz, D. Reed, C. Monzel, R. Baumann, X. Deng, J. Pellish, M. Berg, C. Seidleck, E. Auden, S. Weeden-Wright, N. Gaspard, C. Zhang, D. Fleetwood

2013 Outstanding The primary author of the Outstanding Conference Paper was a student. Thus, the Student Paper Award same paper is also the winner of the 2013 IEEE Outstanding Student Paper Award.

2013 Outstanding The Reliability of Software Algorithms and Software-Based Mitigation Data Workshop Techniques in Digital Signal Processors Presentation Award H. Quinn, T. Fairbanks, J. Tripp, A. Manuzzato

2013 Radiation The 2013 Radiation Effects Award was presented to Dale G. Platteter, retired, during Effects Award the opening ceremonies of the 2013 conference. Dale’s citation reads “For significant contributions to the Radiation Effects Committee of the IEEE/NPSS.”

2014 Radiation The winner of the 2014 Radiation Effects Award will be announced Tuesday morning, Effects Award July 15. The purpose of the award is to recognize individuals who have had a sustained history of outstanding and innovative technical and/or leadership contributions to the radiation effects community.

2015 Radiation Nominations are currently being accepted for the 2015 IEEE Nuclear and Plasma Effects Award Sciences Society (NPSS) Radiation Effects Award. The basis of the award is for individuals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include bench- mark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and/or (2) a demonstrated long-term history of outstanding and innovative leadership contributions in support of the radiation effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the professional development of the members of the radiation effects community.

A cash award and plaque will be presented at the 2015 IEEE NSREC, Boston, Massachusettes in July 2015. Nomination forms are available electronically in PDF Format or in Microsoft Word format at www.nsrec.com/nominate.htm. Additional information can be obtained from Nick van Vonno, Member-at-Large for the Radiation Effects Steering Group. Nick can be reached at 321-725-7546 or at [email protected]

56 Conference Information

Conference Location The Paris Marriott Rive Gauche, located in the heart of the famous “Paris Rive Gauche”, is the site for NSREC. It offers a unique atmosphere, just a short walk from the Butte aux Cailles and Mouffetard neighborhoods. All major sightseeing attractions are easily accessible from the hotel: Musée d’Orsay and the Louvre, the Eiffel Tower, Champs Elysees, the Arc de Triomphe, Notre Dame, the Latin Quarter, etc. With its variety and specific architecture, the “City of Lights” definitely has something for all tastes.

Rooms for Several meeting rooms are available for use by any registered conference attendee at Side Meetings the Marriott on a first come, first served basis. NSREC encourages side meetings to be scheduled at times other than during technical sessions. Contact ETCic at 720-733-2003 or send an e-mail to [email protected] to make side meeting reservations before the conference. To make a side meeting room reservation during the conference, see the NSREC Registration staff in the following room: Le Parc Montsouris A, Les Jardins / Parisian Gardens Level 3.

Notes: You must be a registered conference attendee before a side meeting room can be reserved! All audio/visual equipment and refreshments must be coordinated through the hotel and are the responsibility of the attendee hosting the meeting.

INCLUDED MEALS The 2014 IEEE NSREC will provide refreshments at breaks during the NSREC Short (conference Course and Technical Sessions. A lunch is included for Short Course attendees on attendees only) Monday, July 14. For registered Technical Session attendees, a light lunch will be available in the Industrial Exhibits area on Tuesday, Wednesday and Thursday.

Breakfast is included in the cost of the room for all Marriott Rive Gauche hotel guests. For NSREC hotel guests, this breakfast will be in Le Patio on Level 3, Les Jardins / Parisian Gardens. There will not be an NSREC breakfast for those attendees who do not stay at the Marriott Rive Gauche.

Business Center The Marriott has a full-service business center that can handle color and black/white photocopying, faxing, computers with internet access, and stationery supply. They are open Monday through Sunday from 6:45 AM to midnight. Guests can have 24-hour access for internet access and black/white copies only with prepaid cards. Costs associated with the Business Center may be put on your room account or they can be paid via credit card.

57 Registration and Travel

Conference NSREC encourages Pre-Registration and offers a lower registration rate (“Early Registration Registration”) if the payment is received by no later than Friday, June 13. After that date, the “Late Registration” rates will apply.

IEEE NSREC There are two acceptable forms of payment for registration and activity fees: REGISTRATION 1) MasterCard, VISA, or American Express credit card as the preferred form of payment. 2) A check or wire transfer in US dollars or Euros will be accepted only if this is the sole form of payment allowed by a company or government agency. A check or wire transfer must “clear” into the conference bank before the early book- ing deadline of June 13, 2014. For details, send an e-mail to [email protected] or call 720‑733-2003.

ETCic Registrations can be submitted online at the NSREC website: www.nsrec.com. 2254 Emerald Drive E-mailed or faxed registrations will be accepted with a credit card payment or you Castle Rock, CO 80104 can mail the conference registration form along with your payment to ETCic. If your registration form and payment do not arrive at ETCic by June 30, then it would be Tel: 720-733-2003 better to hand-carry the payment to the conference for on-site registration. Telephone Fax: 720-733-2046 registrations will not be accepted. E-mail: etc@etciC .US

On-site Registration All conference registration will take place in Le Parc Montsouris A, Les Jardins / Location Parisian Gardens Level 3 of the Marriott. If you have not yet registered, go to the “On-Site Registration” desk. If you have already registered, go to the “Pre-Registration” desk to pick up your prepared packets.

On-site Registration Sunday, July 13 5:00 PM – 8:00 PM Hours Monday, July 14 7:30 AM – 5:00 PM

Tuesday, July 15 7:30 AM – 5:00 PM

Wednesday, July 16 7:30 AM – 3:00 PM

Thursday, July 17 7:30 AM – 3:00 PM

Friday, July 18 7:30 AM – 10:00 AM

CONFERENCE A €50 processing fee will be withheld from all refunds. Due to advance financial CANCELLATION commitments, refunds of registration fees requested after June 13, 2014 cannot be guaranteed. Consideration of requests for refunds will be processed after the conference. To request a refund, you must notify ETCic by fax at 720-733-2046 or e-mail at [email protected].

58 Registration and Travel

Host Hotel The 4-star Marriott Rive Gauche Hotel is located on the renowned Parisian “Left information Bank”, close to Montparnasse, the Latin Quarter and Saint Germain des Prés. Hotel amenities include a 24-hour health club (complimentary to hotel guests), concierge desk, business center, room service, lobby ATM, parking garage, and a casual “Great Marriott Rive Gauche Room” type of lobby which opens to the coffee bar and that opens to the cocktail Hotel & Conference lounge and that opens to the 2-floor restaurant. Small sitting areas are found all Center over this area. All conference sessions and exhibits will take place in their extensive Conference Center. 17 Boulevard Saint Jacques The 757 guest rooms are comfortably furnished in a crisp modern design. All rooms are non-smoking and feature windows with shades, individual climate control, LCD 75014 Paris, France TV with video-on-demand and cable, wireless and high-speed internet (included in the NSREC Tel: +33 140 787 980 room rate), work desk, iPod docking station, coffee maker, refrigerator, hair dryer, iron and iron- ing board, multiple phones with voice mail, plush bedding, a safe, and room service. Two levels are allocated to Executive rooms with some upgraded amenities and access to the Executive Lounge.

Standard and upgraded room rates are as follows: • €207.49 single/double occupancy per night for a Standard room with one king or two single beds • €278.99 single/double occupancy per night for an Executive Level room with one king or two single beds • €310.72 triple/quad occupancy per night for a Family Suite with two double beds • €350.49 single/double/triple occupancy per night for a Junior Suite with one king bed and one sofa bed

All of the above rates include internet access in the room and daily breakfast for NSREC registered guests. The Value Added Tax (VAT) of 10% is included in the rates listed above. For U.S. government personnel, the standard room rate above is within the July 2014 U.S. government per diem for Paris.

Based on availability, the conference room rates will be offered three days before and three days after the conference.

HOTEL RESERVATIONS Room reservations should be made by using the special NSREC web link: https://resweb.passkey.com/Resweb.do?mode=welcome_ei_new&eventID=10857528. Enter your arrival and departure dates; then follow the prompts. Based on availability, you will be given the opportunity to choose a standard room type or one of the possible upgrades.

All rooms must be guaranteed by providing a credit card at the time of reservation. The cut-off for IEEE NSREC reservations is on June 13, 2014. Once the room block has been filled OR after the cut-off date (whichever comes first!), room accommodations will be confirmed on a space or rate available basis. Early reservations are strongly suggested!

Please be certain to notify the hotel of any change to your arrival or departure dates. When you check into the hotel, be sure to verify your departure date. Any cancellation must be made by no later than two full days prior to your scheduled arrival. Cancellations made after that time will result in a one-night room cancellation fee.

59 Registration and Travel

Airport and Two airports are easily accessible in Paris. Charles de Gaulle International Airport Transportation (code CDG) is northeast of Paris, about 35 km/21.7 miles from the Marriott. Direct Information flights or excellent connections are available from major cities all over the world into this airport.

Paris Orly Airport (code ORY) is a great alternative airport that is 15 km/8.9 miles southeast of the Marriott. Please note that competitive airfares are sometimes lower into one of these airports than they are into the other -- it’s wise to check both.

Airport Shuttles Charles de Gaulle International Airport (CDG) to and Public the Marriott Rive Gauche or nearby: Transportation Taxi Taxis between CDG and the Marriott are based on travel time and distance but an average rate is about €60 one way.

RER B train From CDG train stations (follow the “Paris by Train” signs inside the airport terminal 1 or 2) to Denfert-Rochereau station (3 blocks from the Marriott). Hours: 04:50 to 23:50 / 7 days a week Ticket price: €9.75 one way (subject to change) Website: http://www.ratp.fr/en/ratp/r_61839/roissy-charles-de-gaulle-airport//

Roissybus Direct bus line from any terminal at CDG Airport to Paris-Opera (follow the “Paris by Bus” signs inside the airport terminal). From Paris-Opera, connect to the Metro. Hours: 06:00 to 23:00 / 7 days a week Ticket price: €11.60 one way (subject to change) Website: http://www.ratp.fr/en/ratp/r_61872/roissybus/

Paris Orly Airport (ORY) to the Marriott Rive Gauche or nearby:

Taxi Taxis between the Marriott and ORY are based on travel time and distance but an average rate is about €30 one way.

Orlybus Direct bus line from the Sud (South) or Ouest (West) terminals at Orly Airport to the Denfert-Rochereau station (3 blocks from Marriott) Hours: 06:00 to 23:30 / 7 days a week Ticket price: €8.25 one way (subject to change) Website: http://www.ratp.fr/en/ratp/r_61866/orlybus/

Orlyval + An automated shuttle linking the Sud (South) and Ouest (West) RER B train terminals of Orly Airport to the RER B line at Antony. Connect to RER B at Antony, and go out at Denfert-Rochereau station (3 blocks from the Marriott) Hours: 06:00 to 23:00 / 7 days a week Ticket price: €12.85 one way (subject to change) + RER fare from Antony to Paris Website: http://www.ratp.fr/en/ratp/r_61864/orlyval/

60 Registration and Travel

Train travel:

Inter European train service is excellent from cities throughout the continent. The closest stations are the following:

Gare du Nord: This is the terminal for Eurostar shuttles (coming from London), about 6.5 km/4 miles north of the Marriott. From Gare du Nord, you can take RER line B to Denfert-Rochereau station (3 blocks from the Marriott).

Gare Montparnasse: This railway station is about 2 km/1.2 miles northwest of the Marriott. From Gare Montparnasse, you can take Metro Line 6 to Saint-Jacques station (1 block from the Marriott).

Gare de Lyon: This railway station is about 2 km/1.2 miles northwest of the Marriott. From Gare de Lyon, you can take Metro Line 14 to Bercy station, change for Line 6 to Saint-Jacques station (1 block from the Marriott).

Of course, from any railway station you can take a taxi to the Marriott. The fare inside Paris is based on travel time and distance but an average rate is about €15 to 25 one way.

Driving directions From Charles de Gaulle Airport (CDG) to Marriott Rive Gauche Hotel Follow the “Paris Est” signs to the “Porte d’Orleans”. Take the road called “Avenue du Général Leclerc” to the “Denfert Rochereau” square. Take a right turn onto the “Boulevard Saint Jacques”. The Paris Marriott Rive Gauche Hotel is at number 17.

From Paris Orly Airport (ORY) Follow the “Paris Sud” signs to the “Porte d’Orleans”. Take the “Avenue du General Leclerc” to the “Denfert Rochereau” square. Turn right onto the “Boulevard Saint Jacques”. The Paris Marriott Rive Gauche Hotel is at number 17.

Parking The Marriott Rive Gauche Hotel features underground car parking and valet service. Limited parking is available at the daily “overnight” rate of €25. Reservations are suggested. Off-site parking is available nearby by the hour or by the day at a slightly less amount. It may be wise to use the excellent public transportation options in Paris so that you do not have to deal with parking fees and space availability.

61 Registration and Travel

Getting Around Without a doubt, the Metro is the fastest and easiest mode of transportation in the city. Town With 16 lines going in every possible direction, you simply have to learn how to read the Metro map, buy tickets and maneuver through the stations. Happily, Metro stations are easy to identify. Additionally, there is excellent bus service throughout Paris, although the bus stations are a bit harder to find.

The city is divided into “transportation zones” and most rates are based on travel either within one zone or between multiple zones. It isn’t as complicated as it sounds… most of the sites that you’ll want to see are in Zones 1-3.

You have many options for purchasing tickets on the Metro, bus, RER trains or trams. You can purchase 1) a one-way ticket each time you need one, 2) a book (carnet) of 10 tickets, 3) a Paris Visit card which is based on zones and number of days needed (valid for international travelers only), or 4) a Carte Orange which is a weekly (Monday-Sunday) or monthly (1st to end of month only) pass that does not allow “sliding” into another week or month.

Tickets can be purchased at all RER or Metro stations and most travel companies in Paris. It is possible to buy them online but be cautious and check references on these companies before completing your transaction.

There are many informative websites that will educate you about these modes of Paris transportation. Some of the best are:

http://www.tripadvisor.com/Travel-g187147-s303/ Paris:France:Public.Transportation.html

http://goparis.about.com/od/transportation/ss/Metro_and_Buses_4.htm

http://en.parisinfo.com/how-to-get-to-and-around-paris/ transports-in-paris-and-the-paris-region/public-transport

62 Industrial Exhibits

The 2014 NSREC Industrial Exhibits will feature the leading worldwide suppliers of radiation hardened products, related materials, services, and research and development. This will be an excellent opportunity for key suppliers, technical engineers and managers to meet and discuss the needs and solutions for electronics used in space vehicles, military electronics, and applications requiring radiation tolerance in harsh environments.

The 2014 NSREC Industrial Exhibits will be in the Foyer Atrium, Pont des Arts A, B and C, and Pont de Sully A and B rooms on Tuesday, Wednesday and Thursday. This is located on the Les Rives de Seine / The Banks of the River Seine Level 0. Conference breaks will be hosted in the Exhibit Area on Tuesday, Wednesday and Thursday along with light lunches (for registered attendees only). NSREC badges Dominique de Saint Roman must be worn at all times. Industrial Exhibits Co-Chair

Tuesday evening, the exhibitors will host the Industrial Exhibits Reception featur- ing complimentary drinks in the Exhibit Area along with light hors d’oeuvres in the Exhibit Area. The Reception is open to all NSREC attendees and their guests.

NOTE: Children under 16 must be accompanied by an adult in the Exhibit Area.

For more information, or to get on the waiting list for a booth, contact:

Dominique de Saint Roman Phone: +33 680 370 429 Consultant Email: [email protected] 5mm/m Print A3 Conférence NSREC 2014 Date de création 18/10/2013 14 juillet 2014 Date de modification 29/01/2014 Odile Ronat Marriott RivePhone: Gauche 310-252-7139 Odile Ronat Niveau 0 International Rectifier Email: [email protected] Industrial Exhibits Co-Chair

Or visit the 2014 NSREC Industrial Exhibits web site: www.nsrec.com/exhibit.htm

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63 Industrial Exhibits

Exhibitors

Organization Internet Site Booth Please check our web site 3D Plus www.3d-plus.com 15 (www.nsrec.com) for a current Aeroflex www.aeroflex.com/HiRel 24-25 listing of companies exhibiting Airbus Defense & Space (France) www.airbusdefenceandspace.com 30 at 2014 NSREC. Airbus Defense & Space (Breman) www.airbusdefenceandspace.com 29 Alter Technology Tuv Nord www.altertechnology.com 45 Analog Devices www.analog.com 31 NSREC API Technologies Corp. micro.apitech.com 36 Industrial Exhibits Atmel Nantes S.A.S. www.atmel.com 38-39 BAE Systems www.rad750.com 43 Marriott Belgian Institute for Space Aeronomy Rive Gauche Hotel (BIRA-IASB) www.aeronomie.be 6 CNES www.cnes.fr 50 LES RIVES DE SEINE / Crane Aerospace & Electronics - Interpoint www.craneae.com/interpoint 14 THE BANKS OF THE E2V www.e2v.com 42 RIVER SEINE Experimental and Mathematical Physics LEVEL 0 Consultants (EMPC) www.empc.com 12 Fraunhofer INT www.int.fraunhofer.de 28 HiLevel Technology, Inc. www.hilevel.com 9 Exhibit Hall Hours Honeywell www.honeywellmicroelectronics.com 8 Hopewell Designs, Inc. www.hopewelldesigns.com 48 Tuesday, July 15 International Rectifier hirel.irf.com 17 Intersil www.intersil.com 20 10:00 AM – 5:00 PM Institute of Space Device Engineering www.tlisde.org 26-27 11:00 AM Morning Break ISDE Vanderbilt www.isde.vanderbilt.edu 4 Isocom Limited www.isocom.uk.com 19 1:00 PM Light lunch ixFiber www.ixfiber.com 46 (for registered attendees only) J.L. Shepherd & Associates www.jlshepherd.com 40 4:00 PM Afternoon Break Linear Technology Corporation www.linear.com 33 Maxwell Technologies www.maxwell.com 22 6:00 PM – 7:30 PM MBDA www.mbdaps.com 13 Reception Microsemi www.microsemi.com 10 Modular Devices, Inc. www.mdipower.com 23 Cocktails MS Kennedy Corp. www.mskennedy.com 37 Northrop Grumman Corporation www.northropgrumman.com 34 Wednesday, July 16 Peregrine Semiconductor www.psemi.com 5 Robust Chip www.robustchip.com 16 10:00 AM – 5:00 PM ChipIR – a New Neutron Single Event Test www.isis.stfc.ac.uk/instruments/ 11:40 AM Morning Break Facility chipir/chipir8471.html 3 Seibersdorf Labor GmbH www.seibersdorf-laboratories.at 41 1:00 PM Light lunch (for registered attendees only) Silicon Space Technology / www.siliconspacetech.com JD Instruments www.jdinstruments.net 18 Silvaco www.silvaco.com 47 Thursday, July 17 SPELS/NRNU MEPHI www.spels.ru 7 STMicroelectronics www.st.com 2 10:00 AM – 2:00 PM Synopsys, Inc. www.synopsys.com 32 10:30 AM Morning Break Telecommunication Systems www.tcsspace.com 49 12:30 PM Light lunch Texas A&M Cyclotron Institute www.cyclotron.tamu.edu/ref 51 (for registered attendees only) Texas Instruments www.ti.com 35 Thales Communications www.thalescomminc.com 44 TRAD www.trad.fr 21 VPT, Inc. www.vptpower.com 11 XIA LLC www.xia.com 1

64 2014 IEEE NSREC Technical Sessions and Short Course Registration Form

Name ______REGISTRATION FEES (in Euros) Last Name First Name Middle Initial Late fee REQUIRED if payment received after June 13, 2014 Name to appear on badge______Early Late Company/Agency______IEEE Member * Short Course €280 €335 €______Address ______Technical Sessions €525 €630 €______Address ______Non-IEEE Member Short Course €355 €420 €______City______Technical Sessions €675 €800 €______State/Province______Full-Time Students who are IEEE Members * Zip or Postal Code______Short Course €130 €335 €______Technical Sessions €150 €630 €______Country______

Telephone Number______VAT ** IS INCLUDED IN THE ABOVE RATES . Fax Number______A tax breakdown will be included on your final receipt. TOTAL AMOUNT AUTHORIZED: €______E-mail Address______

IEEE Membership Number ______PAYMENT OF FEES * To obtain the IEEE rates, the IEEE membership number Payment of conference registration fees must be in Euros must appear on this form. via the following credit cards: American Express Master Card SPECIAL FUNCTIONS Discover Visa I am an IEEE Young Professional and will attend the IEEE Young Professionals Lunch on Wednesday, July 16 Card No. ______

I plan to attend the Women in Engineering Expiration Date ______Security Code______(WIE) Event on Thursday, July 17 Name on card ______

** VAT IEEE International LLC is required to collect the Cardholder applicable VAT for conference registration payments made by Signature ______non-French companies (no French VAT number). French Law: Article 283-1 of the GCI (Code Général des Impôts). Billing address ______If you work for a French company and would like to provide a VAT number so that the VAT may be “self-assessed,” then ______do not use this registration form. Contact the IEEE NSREC Registration office for a different registration form and ______additional instructions on how to register for the conference.

CANCELLATIONS Mail or Fax this form and your remittance to: A €50 processing fee will be withheld from all refunds. Due to advance financial commitments, refunds of conference IEEE NSREC REGISTRATION registration fees requested after June 13, 2014, cannot P O. . Box 398 be guaranteed. Consideration of requests for refunds will be processed after the conference. You must notify Castle Rock, CO 80104 NSREC Registration by e-mail at [email protected] or fax at 720‑733-2046 by no later than June 13, 2014. Tel: 720-733-2003 Fax: 720-733-2046

2014 IEEE NSREC Activities Registration Form

Name ______ACTIVITIES FEES (in Euros) Last Name First Name Middle Initial Late fee REQUIRED if payment received after June 13, 2014 Name to appear on badge______Number Total Early Late Attending Cost Company/Agency______Paris City Tour Tuesday, July 15 Address ______Adult (13 yrs+) €25.00 €30.00 ____ €______Address ______Child (3-12 yrs) €15.00 €20.00 ____ €______Infant (0-2 yrs) €0.00 €0.00 ____ €______City______Seine River Dinner Cruise Wednesday, July 16 State/Province______Adult (12 yrs+) €65.00 €75.00 ____ €______Zip or Postal Code______Child (0-11 yrs) €35.00 €40.00 ____ €______Country______Tour of Versailles Thursday, July 17 Adult (18 yrs+) €35.00 €40.00 ____ €______Telephone Number______Child (3-17 yrs) €15.00 €20.00 ____ €______Fax Number______Infant (0-2 yrs) €0.00 €0.00 ____ €______E-mail Address______VAT ** IS INCLUDED IN THE ABOVE RATES . Please register any accompanying guest(s): List ages only for A tax breakdown will be included on your final receipt. children who are under 21 years. TOTAL AMOUNT AUTHORIZED: €______Name Age ______PAYMENT OF FEES City, State, Country Payment of conference registration fees must be in Euros ______via the following credit cards: Name Age ______American Express Master Card City, State, Country Discover Visa ______Name Age ______Card No. ______City, State, Country Expiration Date ______Security Code______

** VAT IEEE International LLC is required to collect the Name on card ______applicable VAT for conference registration payments made by non-French companies (no French VAT number). French Law: Cardholder Article 283-1 of the GCI (Code Général des Impôts). Signature ______If you work for a French company and would like to provide a VAT number so that the VAT may be “self-assessed,” then Billing address ______do not use this registration form. Contact the IEEE NSREC Registration office for a different registration form and ______additional instructions on how to register for the conference. ______CANCELLATIONS To encourage advance registration for conference social Mail or Fax this form and your remittance to: activities, the NSREC will refund all activity fees for conference attendees and/or their companions who, IEEE NSREC REGISTRATION for any reason, are unable to attend the conference. If P O. . Box 398 your plans change after this form is submitted and you would like to request a refund, you must notify NSREC Castle Rock, CO 80104 Registration by e-mail at [email protected] or by fax at 720‑733-2046 by no later than June 27, 2014. Tel: 720-733-2003 Fax: 720-733-2046

Social Program

PARIS, FRANCE

“Bienvenue à Paris ! The summer is one of the best times to discover the city, so we hope you will enjoy the social program, and join us for our great diner cruise on the Seine river. May your visit be unforgettable!” © Paris Tourist Office - Photographer: Amélie Dupont Philippe Paillet, CEA Local Arrangements Chairman Paris is called “the City of Lights” and comes to mind immediately as one of the world’s most romantic and lovely cities to visit. A capital of the arts, Paris possesses a tremendous cultural richness from its 2000 year history and formidable heritage. With its monuments, museums, great buildings, and its famous characters, Paris never ceases to transport us through time and space. Stroll along the wonderful banks of the Seine river, walk around the artists’ village of Montmartre or explore the nearby Luxembourg gardens and you will see why! Paris is a world capital of gastronomy, and the iconic “French gastronomic meal” now has Unesco humanity heritage status. Plan to discover the French and Parisian art de vivre!

Children must be accompanied by an adult during all tours and social events.

All Companion Tours are based on a minimum number of participants. If that number is not reached, the tour will be cancelled. In that case, you will be notified and your payment will be refunded.

Sunday, July 13 Join your colleagues for complimentary refreshments in the Jardin du Luxembourg 5:00 to 7:00 PM Rooms on the Marriott’s Level 3. This reception is open to all Short Course and Technical Session attendees and their registered guests as a great opportunity to meet registration new friends and renew old acquaintances. NSREC badges are required for entrance Reception to the Registration Reception. The conference registration desk is open from 5:00 to 8:00 PM to obtain your badges.

MOnday, July 14 Conference attendee companions are invited to meet the Local Arrangements Chair, 8:30 to 9:30 AM Philippe Paillet, and to learn about the planned events for the week, as well as how to navigate the city of Paris to various sites of interest. This will be a chance to meet Paris Orientation other companions, renew past acquaintances, and pick up maps and city guides. This orientation will be held in the St. Michel Room at the Marriott Rive Gauche on Level 2.

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MOnday, July 14 Bastille Day is the name given in English-speaking countries to the French National Day, which is celebrated on July 14 each year. In France, it is formally called La Fête Bastille Day Nationale, and commemorates the beginning of the French Revolution with the Storming of the Bastille on the 14 July 1789. Celebrations are held all over France.

The July 14th military parade is one of the highpoints of the national holiday ceremonies. The parade passes down the Champs-Élysées from the Arc de Triomphe to the Place de la Concorde, where the President of the French Republic, his government and foreign ambassadors to France stand. This is a popular event in France, broadcast on French TV, and is the oldest and largest regular military parade in Europe.

At sundown, fireworks are usually launched in front of the Eiffel Tower. Families and friends gather around the Eiffel Tower, Montparnasse, and Saint Germain des Près for views of fireworks that dazzle the City of Light.

The night before Bastille Day in Paris, people from all across the city dress up in ele- gant costumes for music and dancing at the Bal du 14 Juillet. This massive party takes at the Place de la Bastille, where the iconic prison once stood.

Tuesday, July 15 A private coach will take you around 10:00 AM to 4:00 PM the city, to some of the major sites of Paris. Your English-speaking guide will PARIS CITY TOUR give historical and fun facts about the places you see and will help you learn your way around the city. Our tour will stop in Montmartre, in front of the famous stairs leading to the Sacré Coeur Basilica. You can either climb these stairs, or take the funicular that will lead you directly to the top - Metro © Paris Tourist Office - Photographer: Jacques Lebar tickets for the funicular (round trip) will be provided. Enjoy some free time in Montmartre, for lunch and shopping.

At the origin, Montmartre was outside Paris city limits, free of taxes and no doubt also due to the fact that the local nuns made wine, the hill quickly became a popular drinking area. The area developed into a centre of free-wheeling and decadent entertainment at the end of the 19th and the beginning of the 20th centuries. In the popular cabaret the Moulin Rouge, and at Le Chat Noir, artists, singers and perform- ers regularly appeared including Yvette Guilbert, Marcelle Lender, Aristide Bruant, La Goulue, Georges Guibourg, Mistinguett, Fréhel, Jane Avril, Damia and others. Montmartre was the setting of several movies: “La Môme”, (La vie en rose) which elaborates on the life of famous French singer Edith Piaf and her times in the slums of Paris, and of “Amélie Poulain”, the story of a young Parisian woman determined to help the lives of others and find her true love, is set in an exaggeratedly quaint version of contemporary Montmartre. “Moulin Rouge!” was also set in Montmartre, the story of a young man who believes in truth, beauty, freedom, and love, and who falls in love with a famous courtesan.

Please meet in the Marriott lobby at 9:15 AM. Strollers can be taken on the bus. We suggest casual shoes and bring your water! Your return bus will pick you up at the same place where it left you, down the famous stairs of Montmartre, at 3:00 PM, to drive you back to the hotel.

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Tuesday, July 15 Join us for the 2014 Industrial Exhibits 6:00 to 7:30 PM Reception hosted by your NSREC exhibitors. LA SEINE FOYER NSREC attendees and their registered guests are invited to the La Seine Foyer to visit Industrial exhibits the booths. Drinks and light hors d’oeuvres reception will be available in the exhibit hall. NSREC attendees and registered guests must wear their badges at all times.

Note: Similar to 2013, the 2014 Industrial Exhibits Reception does not include dinner.

Wednesday July 16 A special lunch will be held in the St. Germain des Pres Room (Level 2), for IEEE 1:00 to 2:10 Pm member attendees who are Young Professionals. This is an excellent opportunity for newer industry members to informally discuss radiation effects and to become bet- IEEE Young ter acquainted. This year, the Young Professionals lunch will include individuals Professionals representing IEEE, RESG, and NSREC committees for discussions of how to become lunch involved in IEEE NPSS activities. For more information, contact Anthony Sanders, Anthony.B.Sanders@nasa.gov. Note: You must sign up for this lunch on the conference registration form or the online registration.

Wednesday, July 16 Is there a better way to discover Paris than from the Seine River? We are sure that 7:00 to 12:00 PM you will enjoy seeing the City with a different perspective: on board an entirely glass- encased boat, you’ll be in touch with the secret of the city of lights, your eyes will Conference Social sparkle as never before. This is a must-do, a cultural and very Parisian experience that is unique and must be shared! SEINE DINNER CRUISE The two biggest boats of Bateaux Parisiens, the Diamant (the Diamond) and the Onyx, have been booked for our Conference Social. They provide a 360° panoramic view, they glide close to the bridges and you feel that you could touch the buttresses of Notre Dame. Enjoy the finest moments of Paris during an extraordinary voyage.

Our conference social will start with a short bus ride to the foot of the Eiffel Tower, where boarding will take place for a voyage of discovery through the majestic heart of Paris. Please meet in the Marriott lobby at 7:00 PM. Strollers cannot be taken on the bus and boat. Your return pick up will be at the Pier, at 11:15 PM.

A seated dinner will be provided on the two boats. This is an excellent opportunity to socialize with other conference attendees and their guests.

Warning: Space is limited by the total capacity of the boats. As this event is expected to be quite popular, we strongly encourage you to book early so that you can be certain to enjoy © Paris Tourist Office - Photographer: Amélie Dupont this great experience.

71 Social Program

THURSDAY, JULY 17 Our tour will begin with a bus ride from the Marriott Rive Gauche, through the city 9:00 AM TO 3:00 PM of Paris, arriving in front of the Chateau de Versailles. A tour of the Castle will be led by official English-speaking guides, one per group of 30 persons. Once the tour of the VERSAILLES CASTLE AND Castle is over, you will have time to get lunch on your own, either in the old town GARDENS nearby or in the Garden. You can then take some time to walk around the Garden’s trails or just sit and enjoy the views and sounds of nature. Please meet in the Marriott lobby at 8:45 AM. Strollers can be taken on the bus. We suggest casual shoes and bring your water! Your return pick up will be at the front of the Castle, where they left you at the beginning of the visit, at 2:15 PM.

The Palace The Château de Versailles is one of the most beautiful achievements of 18th-century French art. It has been on UNESCO’s World Heritage List for 30 years, and yet the site began as King Louis XIII’s hunting lodge before his son Louis XIV (also known as the “Sun King”) transformed and expanded it. He moved the court and government of France to Versailles in 1682, making it the seat of power until the French Revolution in 1789.

Since Louis XIV chose the site to build the palace we know today, it has been the symbol of royal absolutism and an embodiment of classical French art. In the 1670s Louis XIV built the Grand Apartments of the King and Queen, whose most emblem- atic achievement is the Hall of Mirrors designed by Mansart, where the king put on his most ostentatious display of royal power in order to impress visitors. The Chapel and Opera were built in the next century under Louis XV.

The château lost its standing as the official seat of power in 1789 but acquired a new role in the 19th century as the Museum of the History of France, which was founded at the behest of Louis-Philippe, who ascended to the throne in 1830. That is when many of the château’s rooms were taken over to house the new collections, which were added to until the early 20th century, tracing milestones in French history. During your tour, you will actually see the Hall of Mirrors, the King’s Grand Apartments and the Museum of the History of France.

Hall of Mirrors. Photo: Myrabella / Wikimedia Commons / CC-BY-SA-3.0

72 Social Program

Gardens and Park From the central window of the Galerie des Glaces (Hall of mirrors), the visitor looks of the Château: down on the grand perspective that leads the gaze from the Water Parterre to the hori- A colossal zon. This original perspective, which preceded the reign of Louis XIV, was developed undertaking and prolonged by the gardener André Le Nôtre by widening the Royal Path and dig- ging the Grand Canal. This vast perspective stretches from the façade of the Château de Versailles to the railings of the park.

In 1661, Louis XIV commissioned André Le Nôtre with the design and layout of the gardens of Versailles which, in his view, were just as important as the Château. The works were undertaken at the same time as those for the palace and took forty years to complete. Lastly, the King had all the projects submitted to him and wanted the “details of everything”.

The layout of the gardens required enormous work. Vast amounts of earth had to be shifted to lay out the flower beds, the Orangerie, the fountains and the Canal, where previously only woods, grasslands and marshes were. The earth was transported in wheelbarrows, the trees were conveyed by cart from all the provinces of France and thousands of men, sometimes entire regiments, took part in this vast enterprise.

Since 1992, the gardens have been gradually replanted, and after the devastating storm of December 1999, the work accelerated to such an extent that most sections have already been restored to their original appearance.

Aerobics As in prior conferences, Dave Bushmire, our own certified aerobics instructor, will be conducting morning fitness classes. The classes will be held from 6:00 to 7:00 AM in Le Jardin des Plantes, Level 3 on Wednesday and Thursday.

Activities To encourage advance registration for conference social activities, NSREC will refund Cancellation Policy all activity fees for conference attendees and/or their companions who, for any reason, are unable to attend the conference provided that notice is provided as follows. If your plans change after your Activities Registration form is submitted, simply request a refund by notifying NSREC Registration via fax or e-mail by no later than June 28. Fax: 720-733-2046. E-mail: [email protected].

73 Local Activities

General Information Paris is multifaceted and there are numerous ways of discovering it. Here are some suggestions.

The Louvre Museum Arguably the grandest building in the centre of Paris, the Louvre is famous for several things: its history as the main residence of the French monarchy (until it was replaced by Versailles in the late 17th century); its second life as the planet’s most celebrated art gallery; the wealth of masterpieces it contains – not least of them is Leonardo Da Vinci’s Mona Lisa and the mysterious ancient Greek sculpture of the Venus de Milo.

The Louvre Museum, former residence of the kings of France, has for two centuries been one of the biggest museums in the world. Its collections are spread over 8 departments: Near Eastern Antiquities, Islamic Art, Egyptian Antiquities, Greek, Etruscan and Roman Antiquities, Paintings, Sculptures, Decorative Arts, and Prints © Paris Tourist Office - Photographer: Jacques Lebar and Drawings dating from the Middle Ages to 1848.

The Louvre in figures: 35,000 works of art in 60,600 m² of rooms devoted to permanent collections, with 2,410 windows, 3,000 locks and 10,000 steps.

Musée d’Orsay The Musée d’Orsay is an art gallery housed in the former Gare d’Orsay, a marvel- ous Beaux-Arts railway station, built between 1898 and 1900. The gallery holds predominantly French abstraction dating from 1848 to 1915, incorporating sketches, molds, furniture, and photography. Internationally renowned for its rich collection of impressionist art, the Musée d’Orsay also displays all western artistic creation between 1848 and 1914. Its collections represent all expressive forms, from painting to architecture, not forgetting sculpting, decorative arts and photography. And there is no doubt that you will be dazzled by the beauty of the place: a palace-like station, launched for the 1900 Exposition Universelle.

© Paris Tourist Office - Photographer: At the end of 2011, the museum reopened all of its entirely renovated spaces as well Christian Boyer as some new rooms: an additional 400 m² for the Pavillon Amont, post-impressionist artists at the heart of the museum, the restructuring of the Galerie des Impressionists, a new space for temporary exhibitions, and a new aquatic decor in the Café des Hauteurs, designed by Brazilian designers, the Campana Brothers.

La cathédrale The Cathédrale Notre-Dame de Paris, a masterpiece of Gothic architecture, is the Notre-Dame de Paris most visited monument in France. It was built in the Middle Ages, at the far end of the Île de la Cité. Work started in the 13th century and finished in the 15th century. Badly damaged during the French Revolution, the cathedral was restored in the 19th century by the architect, Viollet-le-Duc. Its many visitors come to admire its stained glass and rose windows, the towers, the steeple and the gargoyles. They can also discover the Notre-Dame treasury and try and climb the towers to enjoy a panoramic view of Paris. In 2013, Notre-Dame celebrated its 850th anniversary. For this occasion, the cathedral renewed its heritage with the arrival of eight new bells as well as a new great bell. On the cathedral’s parvis, a bronze star inscribed ‘zero kilometre’ indicates the centre of the country in terms of road distances.

La Tour Eiffel The Eiffel Tower is located on the Champ de Mars in Paris. It was named after the engineer Gustave Eiffel, whose company designed and built the tower. Erected in 1889 as the entrance arch to the 1889 World’s Fair, it has become both a global cultural

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icon of France and one of the most recognizable structures in the world. The tower is the tallest structure in Paris and the most-visited paid monument in the world. The tower received its 250 millionth visitor in 2010.

The tower is 324 metres (1,063 ft) tall, about the same height as an 81-story building. During its construction, the Eiffel Tower surpassed the Washington Monument to assume the title of the tallest human-made structure in the world, a title it held for 41 years, until the Chrysler Building in New York City was built in 1930. Because of the addition of the antenna atop the Eiffel Tower in 1957, it is now taller than the Chrysler Building by 5.2 metres (17 ft). Not including broadcast antennae, it is the second-tallest structure in France, after the Millau Viaduc.

The tower has three levels for visitors, with restaurants on the first and second. The third level observatory’s upper platform is 276 m (906 ft) above the ground, the highest accessible to the public in the European Union. Tickets can be purchased to climb © Paris Tourist Office - Photographer: Stéphane Querbes by stairs or lift (elevator) to the first and second levels. The climb from ground level to the first level is over 300 steps, as is the walk from the first to the second level. Although there are stairs to the third and highest level, these are usually closed to the public and it is generally only accessible by lift.

TOUR OF OPERA HOUSE The Palais Garnier (Opera House) was built from 1861 to 1875, and was originally “PALAIS GARNIER” called the Salle des Capucines because of its location on the Boulevard des Capucines in the 9th arrondissement of Paris. Soon enough, it became known as the “Palais Garnier” in recognition of its opulence and its architect, Charles Garnier. The the- atre is also often referred to as the Opéra Garnier, and historically was the primary home of the Paris Opera and its associated Ballet until 1989, when the Opéra Bastille opened. The Palais Garnier is now mainly used for ballet.

The Palais Garnier is probably the most famous opera house in the world, a true symbol of Paris. This is at least partly due to its use as the setting for Gaston Leroux’s 1910 novel “The Phantom of the Opera” and its subsequent adaptations in films and musical. Another contributing factor is that among the buildings constructed in Paris during the Second Empire, besides being the most expensive,[10] it has been described as the only one that is “unquestionably a masterpiece of the first rank.”

The Palais Garnier is a building of exceptional opulence. The style is monumental and considered typically Beaux-Arts style, with use of axial symmetry in plan, and exterior ornamentation. Its audience sits under a central chandelier that weighs more Opéra Garnier © Paris Tourist Office - than six tons, and it has a huge stage with room to accommodate as many as 450 art- Photographer: Marc Bertrand ists. It is decorated with very elaborate multicolored marble friezes, columns, and lav- ish statuary, many of which portray deities of Greek mythology.

Avenue des The Avenue des Champs-Élysées is arguably one of the world’s most famous streets, Champs-Elysées and one of the most expensive strips of real estate in the world. Several French monuments are also on the street, including the Arc de Triomphe and the Place de la Concorde. The name is French for Elysian Fields, the place of the blessed dead in Greek mythology. According to a much used description, the Champs-Élysées is “la plus belle avenue du monde” (“the most beautiful avenue in the world”). It is part of a perspective starting from the Louvre’s Pyramid (including the Obelisque of Place de la Concorde, the Arc de Triomphe) to the Arch of La Défense. Between the Arc de Triomphe and Place de la Concorde, luxury stores and upscale famous restaurants can be found, together with Palaces, famous nightlife clubs (Lido, Queen,

75 Local Activities

etc…), museums and famous monuments. Fashion stores and high tech showrooms complete the scene, together with movie theatres and bar terraces. “Anything can be found on the Champs”, from race cars, dresses, lunch places, daily food, to records and perfumes… from dawn to dusk, almost 24/7.

Hôtel National des In 1670, King Louis XIV decided to build the “Hôtel Royal des Invalides” for Invalides wounded homeless soldiers of its different wars. It was built between 1671 and 1676 by Libéral Bruant, and then by Jules Hardouin-Mansart and Robert de Cotte.

This is one of the most prestigious monuments in Paris. Nowadays, it still maintains its initial purpose but the building also hosts three museums (Army museum, “Plans- Reliefs” museum and Liberation Order museum), the tomb of Napoleon 1st designed in 1843, and two churches (the Dôme church and Saint-Louis-des-Invalides church).

Le Panthéon A masterpiece created by Soufflot (1713-1780) and a former church, during the French Revolution the Panthéon became the burial place for famous French personalities. The inscription above the entrance reads AUX GRANDS HOMMES LA PATRIE RECONNAISSANTE (“To the great men, the grateful homeland”). The Nation acknowledges its great men by burying them in the Panthéon, therefore interment here is severely restricted and is allowed only by a parliamentary act for “National Heroes”. Similar high honours exist in Les Invalides for historical military leaders such as Napoléon, Turenne and Vauban.

72 famous personalities rest here, including Voltaire, Jean-Jacques Rousseau, Victor © Paris Tourist Office - Photographer: Hugo, Emile Zola, Jean Jaurès, Jean Moulin, André Malraux and Soufflot, its architect. Daniel Thierry Marie Curie is the only woman interred based on her own merits. The latest personal- ity to enter the Panthéon on 30 November 2002, was Alexandre Dumas (1802–1870), the author of The Three Musketeers and other famous novels. The coffin was draped in a blue-velvet cloth inscribed with the Musketeers’ motto: “Un pour tous, tous pour un” (“One for all, all for one”).

Restoration works are ongoing on the Dome of the Panthéon with access to the colon- nade closed since August 2012. The top parts of the monument should be accessible again starting in April 2014. The monument will remain open throughout the duration of the works; visitors can access the naive and crypt as normal.

Les iles de la Cité et Ile de la Cité, once known as Lutetia, is the oldest settlement in Paris, and hosts more Saint-Louis (La Cité and than its share of Paris sights: the Pont Neuf, the Pont de l’Archevêché and Notre Saint Louis Islands) Dame cathedral, to name only three of them. Its location right in the middle of Paris, with Châtelet to the north and Saint-Germain-des-Prés to the south, makes it the central crossroads of the city, which grew outwards from here. When you’ve finished visiting all the sights, take one last admiring look at the magnificent façade of Notre Dame, then stroll along the banks of the Seine and head east towards Ile Saint Louis: stop first on the bridge (Pont Saint Louis) to watch improvised concerts by wandering musicians, for whom this area is a prime performance venue. Then walk around to discover the quietness of large magnificent homes, a refuge for artists and poets. The island is also heaven for gourmets, with a profusion of restaurants, cafés, tea rooms, etc… It is also the location of famous Berthillon, a Paris landmark for ice-cream lovers!

© Paris Tourist Office - Photographer: Daniel Thierry Iles de la Cité and Saint Louis are also the perfect place for a riverside picnic. At night, the bridges are beautifully lit, and there is a feeling of midsummer magic.

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Moulin Rouge The most famous cabaret in the world! The Moulin Rouge was immortalized by Toulouse-Lautrec and was the cradle of the music hall with the famous Mistinguett. Since it opened in 1889, it has dazzled the whole world. Edith Piaf, Liza Minnelli, Frank Sinatra and Elton John … numerous French and international personalities have over the years become enamoured of this legendary cabaret!

The room is magnificently decorated in belle époque style and red velvet, with typical burlesque frescoes. A wonderful place to enjoy gourmet French food by the Maison Dalloyau, served with champagne - the official drink of the cabaret. All one’s senses are awakened as you enjoy your food and watch the show! Admire a troupe of 60 art- © Paris Tourist Office - Photographer: ists from all over the world who perform twice each evening in the revue ‘Féérie’, a José Serur Yedid show made up of four breathtaking tableaux: feathers, rhinestones, sequins, sparkling decor, acrobats, original music, international attractions ... not forgetting the fast- paced famous French cancan. An amazing night out to share with the family, friends or as a couple! The Moulin Rouge promises an unforgettable night!

Le Quartier Latin Located on the Left bank of the Seine river, with its close proximity to the Sorbonne (the Latin Quarter) University, the Latin Quarter (Saint-Michel, Luxembourg, Saint Germain des Prés) is where students gather. At the origin in the XIIth century, professors and students used to speak in Latin language. This tradition got lost, but the name of the Quarter remained. Around the Sorbonne university, the Collège de France and other prestigious high schools, one can still find numerous libraries, editors, and tiny cinemas for authors’ movies. Countless cafes can be also found, each with its own character. The Saint Michel Fountain is a good meeting point to start exploring the neighbourhood.

Guided tours If you enjoyed the previous visits with an English-speaking guide, and wish to book another one for a private visit not listed here, these websites can be helpful: www.ilouvreparis.com/ www.coloratour.com/

Shopping Beneath their fabulous Art Nouveau glass domes, the Parisian department stores have become must-see monuments to rival the Eiffel Tower and Notre Dame for most visitors. All together, they are a sparkling reflection of Paris in a concentrated form, where all your shopping desires can be granted.

Les Grands Magasins: 16 - 40 boulevard Haussmann 75009 Paris Monday-Saturday, 9:30 AM - 8:00 PM; open until 9:00 PM on Thursday.

Le Bon Marché 24 rue de Sèvres 75007 Paris Monday - Saturday, 10:00 AM - 8:00 PM; open until 9:00 PM on Thursday and Friday.

Beaugrenelle Shopping Center 12 Rue Linois, 75015 Paris Monday - Saturday, 10:00 AM - 9:00 PM; open until 10:00 PM on Thursday. The restaurants and the movie theater open Monday - Sunday, 10:00 AM - midnight.

Weather and The weather in Paris in July can be warm or cold, so please plan to bring jackets along Clothing with you. Temperatures are usually around 20-25° C (68-77° F), but occasional storms can be expected.

7777 2014 Conference Committee

General Chair Technical Program Local Arrangements Short Course Robert Ecoffet Véronique Ferlet-Cavrois Philippe Paillet Frédéric Saigné CNES ESA/ESTEC CEA Université Montpellier 2 +33 561 281 796 +31 715 656 038 +33 169 265 089 +33 467 670 357 [email protected] Veronique.Ferlet-Cavrois@ [email protected] frederic.saigne@ esa.int ies.univ-montp2.fr

Publicity Industrial Exhibits Industrial Exhibits Awards Teresa Farris Dominique de Saint Roman Odile Ronat Robert Reed Aeroflex Consultant International Rectifier ISDE/Vanderbilt 719-594-8035 +33 680 370 429 310-252-7139 615-473-3462 [email protected] [email protected] [email protected] [email protected]

Finance Finance Steve McClure Christian Chatry NASA/JPL TRAD 818-269-5426 +33 561 009 560 Steven.s.mcclure@ [email protected] jpl.nasa.gov

78 Official Reviewers

James Adams, University of Alabama in Wojtek Hajdas, PSI James Reed, DTRA Huntsville Joel Hatch, Ohio State University Nicolas Roche, NRL Teresa Álvarez-Alonso, INTA Dave Hiemstra, MDA Corporation Kenneth Rodbell, IBM Tony Amort, The Boeing Company Kazuyuki Hirose, ISAS/JAXA Hermann Rufenacht, MDA Corporation Jean-Luc Autran, Aix-Marseille University Harry Hjalmarson, Sandia National Ivan Sanchez Esqueda, University of Southern Marta Bagatin, University of Padova Laboratories California Peter Beck, Seibersdorf Laboratories Stefan Höffgen, Fraunhofer Institute Justin Schaefer, SEAKR Engineering Guy Berger, Osmoz Consulting Lee Hoffmann, Honeywell International Leif Scheick, NASA/JPL Bharat Bhuva, Vanderbilt University Tim Holmann, Vanderbilt University Hagen Schmidt, Astrium Satellites John Bird, Ball Aerospace Christophe Inguimbert, ONERA Ron Schrimpf, Vanderbilt University Jeff Black, Sandia National Laboratories Srikanth Jagannathan, Freescale Semiconductor Andreas Schüttauf, Astrium ST Ewart Blackmore, TRIUMF Jeff Kauppila, Vanderbilt University James Schwank, Sandia National Laboratories Cesar Boatella-Polo, ESA Andrew Kelly, BAE Systems Katherine Scott, The Boeing Company Sebastien Bourdarie, ONERA Heikki Kettunen, University of Jyväsklä Sarah Seif El Nasr, CERN Markus Brugger, CERN Mike King, Vanderbilt University Norbert Seifert, Intel Steve Buchner, NRL Rokutaro Koga, The Aerospace Corporation Richard Sharp, Aeroflex Manuel Cabanas-Holmen, The Boeing Company Marian Kravitz, Raytheon Xiao Shen, Vanderbilt University Michael Campola, NASA/GSFC Kirby Kruckmeyer, Texas Instruments Eddy Simoen, IMEC David M. Cardoza, The Aerospace Corporation Ken Label, NASA/GSFC Giovanni Spiezia, CERN Megan Casey, NASA/GSFC Ron Lacoe, The Aerospace Corporation Joseph Srour, The Aerospace Corporation Dakai Chen, NASA/GSFC Ray Ladbury, NASA/GSFC Victoria Sullivan, SEAKR Engineering Xiao Jie Chen, RMD Inc. Damien Lambert, Nucletudes David Sunderland, The Boeing Company Kay Chestnut, The Boeing Company Jean-Marie Lauenstein, NASA/GSFC Gary Swift, Swift Engineering and Radiation Tom Clatworthy, Surrey Satellite Technology Mark Law, University of Florida Services, LLC Ltd. Reed Lawrence, BAE Systems Dennis Thompson, Exelis Geospatial Systems Daniel Clymer, Lockheed Martin Space Systems Pat Lenahan, Pennsylvania State University Alan Tipton, Draper Lew Cohn, NRO Jean-Luc Leray, CEA Thomas L. Turflinger, The Aerospace Corporation Cory Cress, NRL Austin Lesea, Xilinx Blair Tuttle, Pennsylvania State University David Dangla, CNES Gary Lum, Lockheed Martin Taiki Uemura, Fujitsu Frederic Darracq, IMS Florence Malou, CNES Slawosz Uznanski, CERN Paul Dressendorfer, Sandia National Paul Marshall, NASA/GSFC Laboratories (Retired) Nick Van Vonno, Intersil John Martinez, Sandia National Laboratories Clive Dyer, CSDRadConsultancy Bert Vermeire, Space Micro Donald Mayer, The Aerospace Corporation Art Edwards, Air Force Research Laboratory Massimo Violante, Politecnico di Torino Michael Mclain, Sandia National Laboratories Farah El Mamouni, Microsemi Cedric Virmontois, CNES Dale McMorrow, NRL Hugh Evans, ESA Gyorgy Vizkelethy, Sandia National Julien Mekki, CERN Agustin Fernandez-Leon, ESA Laboratories David Merodio Codinachs, ESA Dan Fleetwood, Vanderbilt University Stephanie Weeden-Wright, Vanderbilt Roberto Monreal, Southwest Research Institute University Joseph Friebele, NRL Steven Moss, The Aerospace Corporation Roland Weigand, ESA Matthew Gadlage, NAVSEA Crane Balaji Narasimham, Broadcom Shi-Jie Wen, Cisco Systems Marc Gaillardin, CEA Chris Nicklaw, L3 Communications Jerry Wert, The Boeing Company Kenneth Galloway, Vanderbilt University Paul O’Brien, The Aerospace Corporation Mike Wirthlin, Brigham Young University Greg Ginet, MIT Lincoln Laboratory Tim Oldham, Ball Aerospace Rick Wong, Cisco Systems Sylvain Girard, Université de Saint-Etienne Shinobu Onoda, Japan Atomic Energy Agency Frankie Wong, Space Systems Loral Maximilien Glorieux, STMicroelectronics Philippe Paillet, CEA Rick Wong, Cisco Vincent Goiffon, ISAE Anthony Pang, The Boeing Company Mike Xapsos, NASA/GSFC Patricia Goncalves, LIP Ron Pease, RLP Research Jun Yao, NAIST: NARA Instiute of Science and Michael Gordon, IBM Andrew Pineda, Air Force Research Laboratory Technology Jerry Gorelick, The Boeing Company Christian Poivey, ESA Ali Zadeh, ESA Thomas Granlund, Saab Avionics AB Vincent Pouget, Université Montpellier 2 Stephanie Zajac, The Boeing Company Kai Grürmann, IDA Heather Quinn, LANL Alfio Zanchi, Aeroflex Steve Guertin, NASA/JPL Melanie Raine, CEA En Xia Zhang, Vanderbilt University Nadim Haddad, BAE Systems (Retired) Paolo Rech, UFRGS, Universidade Federal do Xuan Zhang, Vanderbilt University Craig Hafer, Aeroflex Rio Grande do Sul

79 Radiation Effects Steering Group

Executive Chair Executive Vice-Chair Past Chair Marty Shaneyfelt Allan Johnston Dan Fleetwood Sandia National Laboratories J-K Associates Vanderbilt University P.O. Box 5800, MS-1083 308 Marine Drive EECS Department Albuquerque, NM 87185-1083 Coupeville, WA 98239 VU Station B, #350092 505-844-6137 818-588-0919 2301 Vanderbilt Place [email protected] [email protected] Nashville, TN 37235 (Term expires: 7/15) (Term expires: 7/15) 615-322-2498 [email protected] (Term expires: 7/15)

Senior Member-at-Large Member-at-Large Junior Member-at-Large Nick van Vonno Gary Lum Sylvain Girard Intersil Corporation Lockheed Martin Space Systems Company Université de Saint-Etienne 1650 Robert J. Conlan Blvd 1111 Lockheed Martin Way 18 rue Pr. Benoit Lauras Palm Bay, FL 32905 Orgn 70B0S, Bldg 157 Saint-Etienne, France 321-724-7546 Sunnyvale, CA 94088 +33 477 915 812 [email protected] 408-756-0120 [email protected] (Term expires: 7/14) [email protected] (Term expires: 7/16) (Term expires: 7/15)

Secretary Vice-Chair, Publications Vice-Chair, Publicity Pascale Gouker Jim Schwank Teresa Farris MIT Lincoln Laboratory Sandia National Laboratories Aeroflex 244 Wood St PO Box 5800, MS-1083 4350 Centennial Blvd. Room L-304 Albuquerque, NM 87185-1083 Colorado Springs, CO 80907 Lexington, MA 02420 505-844-8376 719-594-8035 781-981-0460 [email protected] [email protected] [email protected] (Term expires: 7/15) (Term expires: 7/15) (Term expires: 7/15)

Special Finance Assignment Special Publications Assignment Vice-Chair, 2014 Conference John Stone Paul V. Dressendorfer Robert Ecoffet Southwest Research Institute Sandia National Laboratories (retired) DCT/AQ/EC 6220 Culebra Road 11509 Paseo del Oso, NE, CNES - Toulouse Space Center Bldg 178 Albuquerque, NM 87111 18 Avenue Edouard Belin San Antonio, TX 78238 505-292-5965 31401 Toulouse Cedex 4, France 210-522-5073 [email protected] +33 561 281 796 [email protected] [email protected] (Term expires: 7/15)

Vice-Chair, 2015 Conference Vice-Chair, 2016 Conference Vice-Chair, 2017 Conference Mike Xapsos NPSS AdCom Member Véronique Ferlet-Cavrois NASA Goddard Space Flight Center Robert Reed ESA/ESTEC Greenbelt Rd, Code 561.4 Vanderbilt University Keplerlaan 1 Greenbelt, MD 20771 1025 16th Ave, Suite 200 2200 AG Noordwijk 301-286-2263 Nashville, TN 37212 The Netherlands [email protected] 615-473-3462 +31 715 656 038 [email protected] [email protected] (AdCom Term expires: 12/14)

NPSS AdCom Member NPSS AdCom Member RADECS Liaison Kay Chesnut Dave Hiemstra Véronique Ferlet-Cavrois Boeing Space and Intelligence Systems MDA ESA/ESTEC W/S24/D572 9445 Airport Rd Keplerlaan 1 PO Box 92919 Brampton, ON L6S 4J3 2200 AG Noordwijk Los Angeles, CA 90009 Canada The Netherlands 310-416-3705 905-790-2800 +31 715 656 038 [email protected] [email protected] [email protected] (Term expires: 12/15) (Term expires: 12/17) (Term expires: 7/15)

80 Announcement and First Call For Papers

2015 IEEE Nuclear and Space Radiation Effects Conference Short Course and Radiation Effects Data Workshop July 13 - 17, 2015 Marriott Copley Place Boston, Massachusetts www .nsrec com. The 2015 IEEE Nuclear and Space Radiation Effects Conference will be held July 13 - 17 at the Marriott Copley Place, Boston, Massachusetts. The conference features a Sponsored By technical program consisting of eight to ten technical sessions of contributed papers IEEE/NPSS Radiation Effects Committee describing the latest observations in radiation effects, a Short Course on radiation effects offered on July 13, a Radiation Effects Data Workshop, and an Industrial Supported By Exhibit. The technical program includes oral and poster sessions. 3D Plus Aeroflex Papers on nuclear and space radiation effects on electronic and photonic materials, Atmel devices, circuits, sensors, and systems, as well as semiconductor processing BAE Systems Boeing technology and design techniques for producing radiation-tolerant (hardened) CNES devices and integrated circuits, will be presented at this meeting of engineers, Honeywell scientists, and managers. International participation is strongly encouraged. Intersil Corporation Microsemi We are soliciting papers describing significant new findings in the following or Northrop Grumman related areas: Peregrine Semiconductor Corporation Southwest Research Institute Texas Instruments Basic Mechanisms of Radiation Effects in Electronic Materials and Devices ■ Single Event Charge Collection Phenomena and Mechanisms Conference Committee ■ Radiation Transport, Energy Deposition and Dosimetry General Chairman ■ Ionizing Radiation Effects Mike Xapsos, ■ Materials and Device Effects NASA Goddard Space Flight Center ■ Displacement Damage [email protected] ■ Processing-Induced Radiation Effects Technical Program Ron Lacoe, Aerospace Corp. Radiation Effects on Electronic and Photonic Devices and Circuits [email protected] ■ Single Event Effects Local Arrangements ■ MOS, Bipolar and Advanced Technologies Heather Quinn, ■ Isolation Technologies, such as SOI and SOS Los Alamos National Laboratory ■ Optoelectronic and Optical Devices and Systems [email protected] ■ Methods for Hardened Design and Manufacturing Short Course ■ Modeling of Devices, Circuits and Systems Tim Oldham, Ball Aerospace ■ Cryogenic or High Temperature Effects [email protected] ■ Novel Device Structures, such as MEMS and Nanotechnologies Publicity Teresa Farris, Aeroflex Space, Atmospheric, and Terrestrial Radiation Effects [email protected] ■ Characterization and Modeling of Radiation Environments ■ Finance Chair Space Weather Events and Effects Jonathan Pellish, NASA/GSFC ■ Spacecraft Charging [email protected] ■ Predicting and Verifying Soft Error Rates (SER) Awards Alessandro Paccagnella, Hardness Assurance Technology and Testing DEI–Padova Univ. ■ New Testing Techniques, Guidelines and Hardness Assurance Methodology [email protected] ■ Unique Radiation Exposure Facilities or Novel Instrumentation Methods ■ Industrial Exhibits Chair Dosimetry David Hansen, Maxwell Technologies, Inc. [email protected] New Developments of Interest to the Radiation Effects Community

Paper Summary Deadline: February 6, 2015

81 Procedure for Submitting Summaries Authors must conform to the following requirements: Summaries must be received by 1. Prepare a single Adobe Acrobat file consisting of a cover page and an informa- February 6, 2015 tive two to four page summary describing results appropriate for 12-minute oral or a poster presentation. The cover page must provide an abstract no longer than 35 words, the title, name and company affiliation of the authors, Detailed submission and and company address (city, state, country). Identify the author present- formatting instructions ing the paper and provide telephone, fax, and email address. The summary will be available after must include sufficient detail about the work to permit a meaningful techni- January 1, 2015 cal review. In the summary, clearly indicate (a) the purpose of your work, at www.nsrec.com (b) significant new results with supporting technical material, and (c) how your work advances the state of the art. Show key references to other related work. The summary must be no less than two and no more than four pages in length, including figures and tables. All figures and tables must be large enough to be clearly read. Note that this is more than an abstract, but do not exceed four pages. 2. Prepare your summary in single-column or IEEE TNS standard two-column format, using 11 point or greater font size, formatted for either U.S. Standard (8.5 x 11 inch) or A4 (21 x 29.7 cm) page layout, with 1 inch (2.5 cm) margins on all four sides. 3. Obtain all corporate, sponsor, and government approvals and releases necessary for presenting your paper at an open attendance international meeting. 4. Summary submission is electronic only, through www.nsrec.com. The submission process consists of entering the paper title, author(s) and affiliation(s), and an abstract no longer than 35 words. Authors are prompted to state their preference for presentation (oral, poster, or data workshop poster) and for session. Details of the submission process may be found at www.nsrec.com. The final category of all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers from initial submissions.

Papers accepted for oral or poster presentation at the technical program are expected to be submitted for publication in the IEEE Transactions on Nuclear Science (December 2015). Selection for this issue will be based on a separate submission of a complete paper. These papers will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. Further information will be sent to prospective authors upon acceptance of their NSREC summary. It is not necessary to be an IEEE member to present a paper or attend the NSREC. However, we encourage IEEE and NPSS membership of all NSREC participants.

Radiation Effects Data Workshop The Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems. Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in a radiation environment, and for designers of radiation-hardened systems. Papers describing new simulation or radiation facilities are also welcomed. The procedure for submitting a summary to the Workshop is identical to the procedure for submitting NSREC summaries. Radiation Effects Data Workshop papers will be published in a Workshop Record and are not candidates for publication in the Conference issue of the IEEE Transactions on Nuclear Science.

Boston, Massachusetts Boston is one of the oldest cities in the United States and is a unique combination of historic and modern sites and green open areas. As the center of the American Revolution, the city is filled with history highlighting its role in American indepen- dence. Boston is one of the most walkable American cities, allowing for a leisurely stroll through areas such as the Back Bay and the Esplanade Park that borders the Charles River. It is also the home to many premiere colleges and universities, museums and shops that are perfect for exploring.

The Boston Marriott Copley Place, located in the historic Back Bay area of the city, is the site for the NSREC. In addition to the hotel amenities it is connected to two major shopping destinations with over 200 shops and restaurants all via climate controlled walkways. It is within walking distance of the Skywalk Observatory, Museum of Fine Arts, Fenway Park – home of the Red Sox, the Theater District and famous Newbury Street with its shopping and outdoor dining. There are also two subway stations nearby for a cost effective way to see the city.

82 PARISPARIS Pont-Neuf Dupont : Amélie Photographer - Office Tourist © Paris Notre-Dame, rose window rose Notre-Dame, Dupont : Amélie Photographer - Office Tourist © Paris Musée d'Orsay Musée Lefranc : David Photographer - Office Tourist © Paris La Butte Montmartre, Le Sacré-Coeur Le Montmartre, Butte La Lebar : Jacques Photographer - Office Tourist © Paris

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