Deposition & Planarization
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Plasma Enhanced Chemical Vapor Deposition of Organic Polymers
processes Review Plasma Enhanced Chemical Vapor Deposition of Organic Polymers Gerhard Franz Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences (MUAS), 34 Lothstrasse, Munich, D-80335 Bavaria, Germany; [email protected] Abstract: Chemical Vapor Deposition (CVD) with its plasma-enhanced variation (PECVD) is a mighty instrument in the toolbox of surface refinement to cover it with a layer with very even thickness. Remarkable the lateral and vertical conformity which is second to none. Originating from the evaporation of elements, this was soon applied to deposit compound layers by simultaneous evaporation of two or three elemental sources and today, CVD is rather applied for vaporous reactants, whereas the evaporation of solid sources has almost completely shifted to epitaxial processes with even lower deposition rates but growth which is adapted to the crystalline substrate. CVD means first breaking of chemical bonds which is followed by an atomic reorientation. As result, a new compound has been generated. Breaking of bonds requires energy, i.e., heat. Therefore, it was a giant step forward to use plasmas for this rate-limiting step. In most cases, the maximum temperature could be significantly reduced, and eventually, also organic compounds moved into the preparative focus. Even molecules with saturated bonds (CH4) were subjected to plasmas—and the result was diamond! In this article, some of these strategies are portrayed. One issue is the variety of reaction paths which can happen in a low-pressure plasma. It can act as a source for deposition and etching which turn out to be two sides of the same medal. -
UHV Thin Film Sputter Deposition System James Joshua Street May
UHV Thin Film Sputter Deposition System James Joshua Street May 2008 Introduction Thin-film deposition is any technique for depositing a thin film of material onto a substrate. It is useful in manufacturing optics, electronics (semiconductors), coatings (such as wear or corrosion resistance), and various composite materials. Thin film creation can be accomplished using a variety of different methods. The vast majority of these methods can be categorized into two regimes: chemical vapor deposition and physical vapor deposition. A substrate is exposed to various volatile precursor gases that react or decompose onto the substrate during chemical vapor deposition. On the other hand, physical deposition methods work by sputtering or evaporating the material, creating a gaseous plume that deposits a film onto the substrate. Within an evaporative mechanism, the source material is heated until it evaporates and condenses on the substrate. Evaporation must occur in a vacuum, so that the mean free path will be large enough that the particles can travel directly to the substrate without colliding with the background gas molecules. Thermal methods to promote evaporation include radiative heating, resistive heating, electron-beam heating, and pulse-laser systems of suitable sources (“Thin Film Deposition Technical Notes,” 2007). I aided in the closing of a ultra-high vacuum (UHV) sputter deposition system, which is a method of coating a substrate using material that is removed from a solid target by energetic ion bombardment. This process needs to be done in UHV in order to prevent contaminants and to allow sputtered particles to travel far enough to be deposited onto the substrate. -
Lecture06-Thin Film Deposition
EE143 – Fall 2016 Microfabrication Technologies Lecture 6: Thin Film Deposition Reading: Jaeger Chapter 6 Prof. Ming C. Wu [email protected] 511 Sutardja Dai Hall (SDH) 1 Vacuum Basics • Units – 1 atmosphere = 760 torr = 1.013x105 Pa – 1 bar = 105 Pa = 750 torr – 1 torr = 1 mm Hg – 1 mtorr = 1 micron Hg – 1 Pa = 7.5 mtorr = 1 newton/m2 – 1 torr = 133.3 Pa • Ideal Gas Law: PV = NkT – k = 1.38E-23 Joules/K = 1.37E-22 atm cm3/K – N = # of molecules (note the typo in your book) – T = absolute temperature in K 2 1 Dalton’s Law of Partial Pressure • For mixture of non-reactive gases in a common vessel, each gas exerts its pressure independent of others • ������ = �� + �� + ⋯ . +�� – Total pressure = Sum of partial pressures • ������ = �� + �� + ⋯ . +�� – Total number of molecules = sum of individual molecules • Ideal gas law observed by each gas, as well as all gases – ��� = ���� – ��� = ���� – ��� = ���� 3 Average Molecular Velocity • Assumes Maxwell- Boltzman Velocity Distribution 7 ��� �3 = �� • where m = molecular weight of gas molecule 4 2 Mean Free Path between collisions �� � = 7 ����� • where – K = Boltzmann constant – T = temperature in Kelvin – d = molecular diameter – P = pressure • For air at 300K �. � �. �� �(�� ��) = = � (�� ��) � (�� ����) 5 Impingement Rate • � = number of molecules striking a surface per unit area per unit time [1/cm2-sec] � � = �. �×���� 7 �� • where – P = pressure in torr – M = molecular weight 6 3 Question • How long does it take to form a monolayer of gas on the surface of a substrate? 7 Vacuum Basics -
Sputter-Deposited Titanium Oxide Layers As Efficient Electron Selective Contacts in Organic Photovoltaic Devices
Sputter-Deposited Titanium Oxide Layers as Efficient Electron Selective Contacts in Organic Photovoltaic Devices Mina Mirsafaei, Pia Bomholt Jensen, Mehrad Ahmadpour, Harish Lakhotiya, John Lundsgaard Hansen, Brian Julsgaard, Horst-Günter Rubahn, Remi Lazzari, Nadine Witkowski, Peter Balling, et al. To cite this version: Mina Mirsafaei, Pia Bomholt Jensen, Mehrad Ahmadpour, Harish Lakhotiya, John Lundsgaard Hansen, et al.. Sputter-Deposited Titanium Oxide Layers as Efficient Electron Selective Contacts in Organic Photovoltaic Devices. ACS Applied Energy Materials, ACS, 2019, 3 (1), pp.253-259. 10.1021/acsaem.9b01454. hal-02995171 HAL Id: hal-02995171 https://hal.archives-ouvertes.fr/hal-02995171 Submitted on 2 Dec 2020 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Sputter deposited titanium oxide layers as efficient electron selective contacts in organic photovoltaic devices Mina Mirsafaei1, Pia Bomholt Jensen2, Mehrad Ahmadpour1, Harish Lakhotiya2, John Lundsgaard Hansen2, Brian Julsgaard2, Horst-Günter Rubahn1, Rémi Lazzari3, Nadine Witkowski3, Peter Balling2, Morten Madsen1* 1 SDU NanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, Sønderborg, DK-6400, Denmark 2 Department of Physics and Astronomy/Interdisciplinary Nanoscience Center (iNano), Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, Denmark 3 Sorbonne Université, UMR CNRS 7588, Institut des Nanosciences de Paris (INSP), 4 place Jussieu, 75005 Paris, France KEYWORDS. -
Composition and Properties of RF-Sputter Deposited Titanium Dioxide Thin Films
Nanoscale Advances PAPER View Article Online View Journal | View Issue Composition and properties of RF-sputter deposited titanium dioxide thin films† Cite this: Nanoscale Adv.,2021,3,1077 Jesse Daughtry, ab Abdulrahman S. Alotabi,ab Liam Howard-Fabrettoab and Gunther G. Andersson *ab The photocatalytic properties of titania (TiO2) have prompted research utilising its useful ability to convert solar energy into electron–hole pairs to drive novel chemistry. The aim of the present work is to examine the properties required for a synthetic method capable of producing thin TiO2 films, with well defined, easily modifiable characteristics. Presented here is a method of synthesis of TiO2 nanoparticulate thin films generated using RF plasma capable of homogenous depositions with known elemental composition and modifiable properties at a far lower cost than single-crystal TiO2. Multiple depositions regimes were Received 14th October 2020 examined for their effect on overall chemical composition and to minimise the unwanted contaminant, Accepted 7th December 2020 carbon, from the final film. The resulting TiO2 films can be easily modified through heating to further DOI: 10.1039/d0na00861c induce defects and change the electronic structure, crystallinity, surface morphology and roughness of Creative Commons Attribution-NonCommercial 3.0 Unported Licence. rsc.li/nanoscale-advances the deposited thin film. Introduction nanoparticulate TiO2. Nanoparticle Titania has shown partic- ular promise across the range of possible applications and also ff Titania (TiO2) -
Tracing the Recorded History of Thin-Film Sputter Deposition: from the 1800S to 2017
Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 Cite as: J. Vac. Sci. Technol. A 35, 05C204 (2017); https://doi.org/10.1116/1.4998940 Submitted: 24 March 2017 . Accepted: 10 May 2017 . Published Online: 08 September 2017 J. E. Greene COLLECTIONS This paper was selected as Featured ARTICLES YOU MAY BE INTERESTED IN Review Article: Plasma–surface interactions at the atomic scale for patterning metals Journal of Vacuum Science & Technology A 35, 05C203 (2017); https:// doi.org/10.1116/1.4993602 Microstructural evolution during film growth Journal of Vacuum Science & Technology A 21, S117 (2003); https://doi.org/10.1116/1.1601610 Overview of atomic layer etching in the semiconductor industry Journal of Vacuum Science & Technology A 33, 020802 (2015); https:// doi.org/10.1116/1.4913379 J. Vac. Sci. Technol. A 35, 05C204 (2017); https://doi.org/10.1116/1.4998940 35, 05C204 © 2017 Author(s). REVIEW ARTICLE Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 J. E. Greenea) D. B. Willett Professor of Materials Science and Physics, University of Illinois, Urbana, Illinois, 61801; Tage Erlander Professor of Physics, Linkoping€ University, Linkoping,€ Sweden, 58183, Sweden; and University Professor of Materials Science, National Taiwan University Science and Technology, Taipei City, 106, Taiwan (Received 24 March 2017; accepted 10 May 2017; published 8 September 2017) Thin films, ubiquitous in today’s world, have a documented history of more than 5000 years. However, thin-film growth by sputter deposition, which required the development of vacuum pumps and electrical power in the 1600s and the 1700s, is a much more recent phenomenon. -
Deposition and Characterization of Magnetron Sputtered Beta
Deposition and Characterization of Magnetron Sputtered Beta-Tungsten Thin Films Jiaxing Liu Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Graduate School of Arts and Sciences COLUMBIA UNIVERSITY 2016 © 2016 Jiaxing Liu All Rights Reserved ABSTRACT Deposition and Characterization of Magnetron Sputtered Beta-Tungsten Thin Films Jiaxing Liu β-W is an A15 structured phase commonly found in tungsten thin films together with the bcc structured W, and it has been found that β-W has the strongest spin Hall effect among all metal thin films. Therefore, it is promising for application in spintronics as the source of spin- polarized current that can be easily manipulated by electric field. However, the deposition conditions and the formation mechanism of β-W in thin films are not fully understood. The existing deposition conditions for β-W make use of low deposition rate, high inert gas pressure, substrate bias, or oxygen impurity to stabilize the β-W over α-W, and these parameters are unfavorable for producing β-W films with high quality at reasonable yield. In order to optimize the deposition process and gain insight into the formation mechanism of β-W, a novel technique using nitrogen impurity in the pressure range of 10-5 to 10-6 torr in the deposition chamber is introduced. This techniques allows the deposition of pure β-W thin films with only incorporation of 0.4 at% nitrogen and 3.2 at% oxygen, and β-W films as thick as 1μm have been obtained. The dependence of the volume fraction of β-W on the deposition parameters, including nitrogen pressure, substrate temperature, and deposition rate, has been investigated. -
Deposition Lecture Day 2 Deposition
Deposition Lecture Day 2 Deposition PVD - Physical Vapor Deposition E-beam Evaporation Thermal Evaporation (wire feed vs boat) Sputtering CVD - Chemical Vapor Deposition PECVD LPCVD MVD ALD MBE Plating Parylene Coating Vacuum Systems, pumps and support equipment Differences, Pros and Cons for depositing various materials Physical vs. Chemical Deposition Metallization - depositing metal layers or thin films - E-beam & Thermal Evaporation, Sputtering, Plating - Contact layer, mask/protection layer, interface layers Dielectric Deposition - depositing dielectric layers or thin films -CVD, e-beam, sputtering - insulating/capacitor layer, mask/protecting layer, interface layers *Dielectric = an electrical insulator that can be polarized by an applied electric field. ~energy storing capacity → capacitor Environment of the Deposition *Cleanroom is not enough! Must also be in vacuum! Purity of the deposited film depends on the quality of the vacuum, and on the purity of the source material. Cryo pumps Evaporation is a common method of thin-film deposition. The source material is evaporated in a vacuum. The vacuum allows vapor particles to travel directly to the target object (substrate), where they condense back to a solid state. Evaporation is used in microfabrication, and to make macro-scale products such as metallized plastic film. Any evaporation system includes a vacuum pump. It also includes an energy source that evaporates the material to be deposited. Many different energy sources exist: ● In the thermal method, metal material (in the form of wire, pellets, shot) is fed onto heated semimetal (ceramic) evaporators known as "boats" due to their shape. A pool of melted metal forms in the boat cavity and evaporates into a cloud above the source. -
General Disclaimer One Or More of the Following Statements May Affect This Document
General Disclaimer One or more of the Following Statements may affect this Document This document has been reproduced from the best copy furnished by the organizational source. It is being released in the interest of making available as much information as possible. This document may contain data, which exceeds the sheet parameters. It was furnished in this condition by the organizational source and is the best copy available. This document may contain tone-on-tone or color graphs, charts and/or pictures, which have been reproduced in black and white. This document is paginated as submitted by the original source. Portions of this document are not fully legible due to the historical nature of some of the material. However, it is the best reproduction available from the original submission. Produced by the NASA Center for Aerospace Information (CASI) i NASA TECHNICAL NASA TM X-73511 MEMORANDUM M ti X ^e B 91n17j,, un z On NONPROPULSIVE APPLICATIONS OF ION BEAMS by W. R. Hudson Lewis Research Center Cleveland. Ohio 44135 TECHNICAL PAPER to be presented at the Twelfth International Electric Propulsion Conference sponsored by the American Institute of Ae ronautics and Astronautics Key Bisca}, ne, Florida. November 15-17, 1976 (NASA-TM-X-73511) NONPROPULSIVF N77-12847 APPLICATIONS OF ION BEAM) (NASA) 16 p HC A02/MF A01 CSCL 20J Unclas 63/73 56895 } i NONPROPULSIVE APPLICATIONS OF ION BEAMS W. R. Hudson Natiunal Aeionautica and Space Administration Lewis Research Center Cleveland, Ohio 44135 Abstract terial, which is then deposited onto a substrate. In ion beam machining (fig, lb) a maks is placed This paper describes the results of an inves- between the source and the target, such that target tigation of the nonpropulsive applications of elec- material is selectively removed from the unahlelded tric propulaion technology. -
Deposition of Silicon Thin Films by Ion Beam Assisted Deposition
Old Dominion University ODU Digital Commons Electrical & Computer Engineering Theses & Dissertations Electrical & Computer Engineering Spring 2017 Deposition of Silicon Thin Films by Ion Beam Assisted Deposition Tejaswini Miryala Old Dominion University, [email protected] Follow this and additional works at: https://digitalcommons.odu.edu/ece_etds Part of the Power and Energy Commons Recommended Citation Miryala, Tejaswini. "Deposition of Silicon Thin Films by Ion Beam Assisted Deposition" (2017). Master of Science (MS), Thesis, Electrical & Computer Engineering, Old Dominion University, DOI: 10.25777/ t8dq-6196 https://digitalcommons.odu.edu/ece_etds/19 This Thesis is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Theses & Dissertations by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. i DEPOSITION OF SILICON THIN FILMS BY ION BEAM ASSISTED DEPOSITION by Tejaswini Miryala B.Tech. May 2015, Jawaharlal Nehru Technological University, India A Thesis Submitted to the Faculty of Old Dominion University in Partial Fulfillment of the Requirements for the Degree of MASTER OF SCIENCE ELECTRICAL AND COMPUTER ENGINEERING OLD DOMINION UNIVERSITY May 2017 Approved by: Sylvain Marsillac (Director) Christian Zemlin (Member) Chung Hao Chen (Member) ii ABSTRACT DEPOSITION OF SILICON THIN FILM BY ION BEAM ASSISTED DEPOSITION Tejaswini Miryala Old Dominion University, 2017 Director: Dr. Sylvain Marsillac With the depletion of non-renewable energy sources owing to increasing demands, we need to develop renewable energy sources, which can replace them with cleaner energy sources. The solar industry is one of these renewable energies. -
Magnetron Sputtering of Polymeric Targets: from Thin Films to Heterogeneous Metal/Plasma Polymer Nanoparticles
materials Article Magnetron Sputtering of Polymeric Targets: From Thin Films to Heterogeneous Metal/Plasma Polymer Nanoparticles OndˇrejKylián 1,* , Artem Shelemin 1, Pavel Solaˇr 1, Pavel Pleskunov 1, Daniil Nikitin 1 , Anna Kuzminova 1, Radka Štefaníková 1, Peter Kúš 2, Miroslav Cieslar 3, Jan Hanuš 1, Andrei Choukourov 1 and Hynek Biederman 1 1 Department of Macromolecular Physics, Faculty of Mathematics and Physics, Charles University, V Holešoviˇckách 2, 180 00 Prague 8, Czech Republic 2 Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešoviˇckách 2, 180 00 Prague 8, Czech Republic 3 Department of Physics of Materials, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic * Correspondence: [email protected] Received: 25 June 2019; Accepted: 23 July 2019; Published: 25 July 2019 Abstract: Magnetron sputtering is a well-known technique that is commonly used for the deposition of thin compact films. However, as was shown in the 1990s, when sputtering is performed at pressures high enough to trigger volume nucleation/condensation of the supersaturated vapor generated by the magnetron, various kinds of nanoparticles may also be produced. This finding gave rise to the rapid development of magnetron-based gas aggregation sources. Such systems were successfully used for the production of single material nanoparticles from metals, metal oxides, and plasma polymers. In addition, the growing interest in multi-component heterogeneous nanoparticles has led to the design of novel systems for the gas-phase synthesis of such nanomaterials, including metal/plasma polymer nanoparticles. In this featured article, we briefly summarized the principles of the basis of gas-phase nanoparticles production and highlighted recent progress made in the field of the fabrication of multi-component nanoparticles. -
Evaporation Sources
MATERIALS EVAPORATION I SOURCES • Evaporation Source Selection Guide ................... .I 02 • Tungsten Filaments for Vacuum Metalizing.......... .I 04 I • Tungsten Rod Source ..................................... .I 07 • Point Source Loop Filaments............................. .I 08 • Heater Filaments ............................................ I 10 • Baskets ........................................................ .I 11 • Crucibles ...................................................... .I 14 • Heat Shielded Crucible Heaters ......................... .I 16 • Boat Sources ................................................. .I 18 • Folded Boats ................................................. .I 29 • Alumina Coated Evaporation Sources.................. .I 31 • Special Tantalum Boats.................................... I 37 • Folded Baffled Box Sources .............................. .I 41 • Baffled Box Sources for SiO, ZnS ....................... .I 43 • Microelectronic Sources Tungsten – Tantalum – Molybdenum .................................. .I 48 • Chrome Plated Tungsten Rods .......................... .I 53 • Tungsten Screens .......................................... .I 54 I 01 MATERIALS EvaporatioN SOUrces ManufacturingEvaporation Source Processes Selection Guide Evaporation Source Selection Guide This source selection guide is provided to help you determine which evaporation source type might fit your needs. How to use the Guide: 1. Determine how much current your power supply is capable of safely producing. 2. Establish the vapor